DE102011102590A1 - Method for producing light-emitting diode components - Google Patents

Method for producing light-emitting diode components

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Publication number
DE102011102590A1
DE102011102590A1 DE201110102590 DE102011102590A DE102011102590A1 DE 102011102590 A1 DE102011102590 A1 DE 102011102590A1 DE 201110102590 DE201110102590 DE 201110102590 DE 102011102590 A DE102011102590 A DE 102011102590A DE 102011102590 A1 DE102011102590 A1 DE 102011102590A1
Authority
DE
Germany
Prior art keywords
light
emitting diode
method according
wafer
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE201110102590
Other languages
German (de)
Inventor
Herbert Brunner
Hans-Christoph Gallmeier
Harald Jäger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Opto Semiconductors GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE201110102590 priority Critical patent/DE102011102590A1/en
Publication of DE102011102590A1 publication Critical patent/DE102011102590A1/en
Application status is Pending legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0041Processes relating to wavelength conversion elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/005Processes relating to encapsulations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatments of the devices, e.g. annealing, recrystallisation, short-circuit elimination

Abstract

A method for producing a plurality of similar light-emitting diode components, each having at least one light-emitting diode chip and a conversion means which wavelength-converts at least a portion of an electromagnetic primary radiation emitted by the at least one light-emitting diode chip.
The steps are planned:
Providing a wafer with light-emitting diode chips applied thereto,
Introducing the wafer into a cavity of an injection mold,
- Driving a spray mass, which is mixed with conversion means, in the cavity, so that the light-emitting diode chips are surrounded with a uniform layer of spray mass,
- Remove the mold
- Separating the light-emitting diode components on the wafer.

Description

  • The invention relates to a method for producing light-emitting diode components in which at least a part of a, emitted by a light-emitting diode chip, primary radiation is wavelength-converted.
  • Nowadays, light-emitting diode components with different colors are possible. For this purpose, the light-emitting diode component has a light-emitting diode chip, also known as LED. In order to reach the desired color location, primary radiation emitted by the LED is radiated onto a conversion medium. In this, the primary radiation of the LED is converted into a secondary radiation of the desired color location.
  • At least in-house manufacturing methods of light-emitting diode components, the wavelength conversion by at least a portion of the, emitted by an LED, primary radiation by so-called "CLC Layer Transfer" known. In this case, a flat converter plate is glued directly to the chip. The "wire bond pad" is left out so that the chip can then be wire-bonded.
  • A central arrangement of the chip connections is unsuitable here, since there is a risk of adhesive contamination and associated poor bondability. Due to the flat converter plate in combination with special chip designs or due to transparent adhesives, it comes to inhomogeneities of the color location, eg. As the so-called "blue piping" in light emitting diodes with blue primary radiation, on the radiation angle of the light source. Particularly affected are the margins, where an insufficient conversion takes place.
  • Likewise, the method of volume conversion is known. In this case, the light-emitting diode chip is wrapped after wire contacting with a potting material to which the converter is already mixed. The wrapping of the chip happens by casting.
  • The disadvantage of this method is that it comes through the so-called "Stokes shift" to a heating of the potting material, which is determined by the potting height. By "Stokes shift" is generally understood the effect that the light emitted by fluorescent agents is shifted toward longer wavelengths; So there is a "redshift". The heating can lead to thermal overstressing of the potting material, which is characterized by cracks in the potting material as well as by converter aging or converter quenching. As converter quenching, also known as converter quenching, processes are referred to which result in a decrease in the intensity of the fluorescence of a fluorescence agent without the fluorescence agent being destroyed. This is no longer adequate conversion and it comes to inhomogeneities of the color location. Particularly affected by this are high-current applications, so-called high-power designs. In addition, light-emitting devices manufactured by volume conversion are not suitable for imaging systems due to their generated surface radiation.
  • The present invention is based on the object to develop a method for producing light-emitting diode components with conversion element, which avoid inhomogeneities of the color locus or Farbortschwankungen and achieve improved color homogeneity on the emission angle.
  • This object is achieved by a method according to the independent claims. Advantageous developments are specified in the dependent claims.
  • According to the invention, a multiplicity of identical light-emitting diode components, each having an LED and a conversion means which wavelength-converts at least part of a radiation emitted by an LED, are produced by radiation-stable and thermally stable material being added to the wafer by means of spraying technology , is applied.
  • Here, the wafer is introduced with the LEDs in a cavity of an injection mold, in which in a further step, a spray mass is driven. This spray mass is mixed with a conversion agent and is driven in such a way that the entire wafer surface is uniformly covered. Subsequently, the injection mold is removed and the light-emitting diode light sources from the wafer composite are separated.
  • With the method according to the invention, it is possible to produce completely covered light-emitting diode chips, which results in a considerable reduction or avoidance of inhomogeneities of the color locus.
  • Preferably, silicone with attached converter is used as the sprayed material. The spray mass may contain at least one light source. For example, inorganic substances such as garnets doped with rare earths or nitrides are suitable for this purpose. Other suitable bulbs, such as rare earth doped aluminates or orthosilicates, are from the WO 98/12757 known.
  • In an extended embodiment, SiO.sub.2 particles are added to the silicone / converter mixture in order to protect the silicone from thermal damage and the converter from aging or quenching.
  • In alternative embodiments, an epoxy-silicone hybrid or other radiation and thermal stable materials may be used as the filler. In addition, additional thermally conductive material can be added to these combinations of filler material and converter.
  • In an expedient development of the method, the injection mold is designed in such a way that results in a smooth, even surface of the spray material.
  • Alternatively, the injection mold is designed such that the cover of the chip is embodied in three dimensions (eg in the form of a dome). As a result, an improvement in the color homogeneity over the emission angle is achieved at the same time.
  • In an advantageous embodiment of the method, the "wire bond pad" of the chip is kept free of the injection compound in order to enable wire bonding of the chip. This is done suitably by removal of the mass, over the relevant electrical contacts, by means of laser. In an alternative embodiment, the injection molding tool is designed such that it seals the bond contact directly and thus keeps it free of potting material. In a further embodiment, the "wire bond pad" is protected from potting material by means of a film applied thereon.
  • In a particularly advantageous embodiment of the method, a connection contact, the so-called "bond pad", is protected by application of a photoactive layer, which can subsequently be removed again. This can be z. B. be realized by wet chemical methods.
  • Suitably, the light-emitting diode chips after wrapping, by means of sawing the wafer, isolated.
  • The complete coverage of the chip (including the mesa) with converter-filled potting material significantly reduces or avoids inhomogeneities in the color location.
  • According to alternative methods, a plurality of presorted LEDs is arranged to form an artificial wafer and this is introduced into a cavity of an injection mold, into which a injection molding compound is driven in a further step. This spray mass is mixed with conversion means and is driven in such a way that the entire wafer surface is uniformly covered. Subsequently, the injection mold is removed and the light-emitting diode components from the artificial wafer composite are separated.
  • The arrangement of presorted LEDs on an artificial wafer makes it possible to produce especially color-homogeneous light-emitting diode components whose color location distribution is limited by the presorting.
  • In various developments of the alternative method, the same injection molding materials and surface shapes can be used again, as described above. Also, the previously described methods for recessing the "wire bond pads" can be used.
  • After wrapping the LEDs they are separated by sawing the artificial wafer. The so isolated chip is coated on all side flanks and the surface with converter-filled potting material, resulting in a significant reduction of inhomogeneities of the color location, especially at the edges.
  • In alternative embodiments of the method, the individual LEDs are separated by water jet cutting, lasers or punching.
  • In a particularly advantageous embodiment of the method, the LEDs are singulated by means of a specially designed saw, which generates a structure at the side edges, along the parting line. This achieves a further improvement of the color homogeneity over the emission angle.
  • Embodiments will be explained with reference to the figures.
  • Show it:
  • 1a an embodiment of an intermediate product which is produced according to an embodiment of the method according to the invention.
  • 1b an alternative embodiment of the intermediate of 1a ,
  • 2a A third embodiment of an intermediate product, which is produced according to an embodiment of the method according to the invention.
  • 2 B an alternative embodiment of the intermediate of 2a ,
  • In the embodiments, the same or equivalent components are each provided with the same reference numerals.
  • The intermediate in 1a include a chip carrier ( 1 ), which LEDs ( 3 ) and with a layer of spray ( 2 ) is covered. The chip carrier ( 1 ) with applied LEDs ( 3 ) was introduced into the cavity of an injection mold and by driving a spray mass ( 2 ), which is mixed with a conversion agent, evenly with a layer formed as a spray mass ( 2 ) surround. The cavity is shaped such that a smooth, even surface ( 5a ) arises. Then the LEDs ( 3 ) on the chip carrier ( 1 ) by sawing along a dividing line ( 4 ) isolated.
  • In 1b the intermediate of one embodiment of the method according to the invention has a chip carrier ( 1 ) with applied LEDs ( 3 ), which consists of a layer of spray ( 2 ) is covered. For this purpose, the chip carrier ( 1 ) with the applied LEDs ( 3 ) introduced into a cavity of an injection mold and by driving a spray mass ( 2 ), the conversion agent are attached, uniformly with a layer of spray ( 2 ) surround. The cavity of the injection mold is designed so that a structured surface ( 5b ) arises. The chip carrier ( 1 ) worn LEDs ( 3 ) are subsequently sawed along a parting line ( 4 ) isolated.
  • The intermediate in 2a includes chip carrier ( 1 ), with LEDs ( 3 ), which of spray mass ( 2 ) are surrounded. According to the proposed method, the individual and, for example, color location presorted chip carriers ( 1 ), with LEDs ( 3 ), arranged to form an artificial wafer and then introduced into a cavity of an injection mold. Then a spray mass ( 2 ) such that the chip carriers ( 1 ), each one LED ( 3 ), of a uniform layer of spray ( 2 ) are surrounded. The spray mass are added conversion agent. The cavity of the injection mold is in this case shaped such that a smooth, flat surface ( 5a ) arises. Each on a chip carrier ( 1 ) applied LEDs ( 3 ) are cut by sawing along a dividing line ( 4 ) isolated.
  • This in 2 B shown intermediate again has chip carrier ( 1 ) with applied LEDs ( 3 ), which are enveloped by a spray mass. For this purpose, the individual chip carriers ( 1 ) are arranged to form an artificial wafer and introduced into a cavity of an injection mold. By driving a spray mass ( 2 ), the arrangement was uniform with a layer of spray ( 2 ) surround. The cavity of the injection mold is designed such that a structured surface ( 5b ) arises. The individual, on the chip carriers ( 1 ), LEDs ( 3 ) by sawing along a dividing line ( 4 ) isolated.
  • In alternative forms, the intermediates in the 2a and 2 B also be separated by water cutting, punching or laser separation.
  • QUOTES INCLUDE IN THE DESCRIPTION
  • This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
  • Cited patent literature
    • WO 98/12757 [0012]

Claims (14)

  1. Method for the simultaneous production of a multiplicity of similar light-emitting diode components, each having at least one light-emitting diode chip and a conversion means, which wavelength-converts at least a part of an electromagnetic primary radiation emitted by the at least one light-emitting diode chip, comprising the steps of: Providing a wafer with light-emitting diode chips applied thereto, Introducing the wafer into a cavity of an injection mold, - Driving a spray mass, which is mixed with conversion means, in the cavity, so that the light-emitting diode chips are surrounded with a uniform layer of spray mass, - Remove the mold - Separating the light-emitting diode components on the wafer.
  2. Method for the simultaneous production of a multiplicity of similar light-emitting diode components, each having at least one light-emitting diode chip and a conversion element which wavelength-converts at least a part of an electromagnetic radiation emitted by the at least one light-emitting diode chip, comprising the steps of: - Arrange wavelength pre-sorted light-emitting diode chips to an artificial wafer - introducing the wafer into a cavity of an injection mold - Driving a spray mass, which is mixed with conversion means, in the cavity, so that the light-emitting diode chips are surrounded with a uniform layer of spray mass, Removing the injection mold, - Separating the light emitting diode devices on the wafer.
  3. A method according to claim 1 or 2, characterized in that the surface of the spray material covering results in a smooth, flat surface.
  4. A method according to claim 1 or 2, characterized in that the surface of the spray material covering has a structure.
  5. Method according to one of Claims 1 to 4, in which the light-emitting diode chips have electrical contact surfaces.
  6. Method according to Claim 5, in which spray material applied to electrical contact surfaces is removed by means of a laser.
  7. Method according to one of claims 1 to 6, are covered in the electrical contact surfaces of the light-emitting diode chip prior to introduction into the cavity and exposed again before singulating.
  8. The method of claim 7, wherein the covering of the electrical contact surfaces is done by means of films, which are applied to the front surface of the light-emitting diode chip.
  9. The method of claim 7, wherein the covering of the electrical contact surfaces of the chip is done through a front-side inner wall of the injection mold.
  10. The method of claim 7, wherein the covering of the electrical contact surfaces of the chip is carried out by a photoactive layer.
  11. Method according to one of Claims 1 to 10, in which the singulation of the light-emitting diode light sources or light-emitting diode chips is performed by sawing.
  12. Method according to one of Claims 2 to 10, in which the singulation of the light-emitting diode light sources or light-emitting diode chips is effected by water-jet cutting.
  13. Method according to one of Claims 2 to 10, in which the singulation of the light-emitting diode light sources or light-emitting diode chips is effected by laser separation.
  14. Method according to one of Claims 2 to 10, in which the singulation of the light-emitting diode light sources or light-emitting diode chips is effected by punching.
DE201110102590 2011-05-27 2011-05-27 Method for producing light-emitting diode components Pending DE102011102590A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE201110102590 DE102011102590A1 (en) 2011-05-27 2011-05-27 Method for producing light-emitting diode components

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201110102590 DE102011102590A1 (en) 2011-05-27 2011-05-27 Method for producing light-emitting diode components
PCT/EP2012/058825 WO2012163655A1 (en) 2011-05-27 2012-05-11 Method for producing encapsulated light emitting diode with wavelength converters inside the encapsulation

Publications (1)

Publication Number Publication Date
DE102011102590A1 true DE102011102590A1 (en) 2012-11-29

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DE (1) DE102011102590A1 (en)
WO (1) WO2012163655A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998012757A1 (en) 1996-09-20 1998-03-26 Siemens Aktiengesellschaft Sealing material with wavelength converting effect, application and production process
DE10008203A1 (en) * 2000-02-23 2001-08-30 Vishay Semiconductor Gmbh Manufacturing electronic semiconducting components involves attaching semiconducting body to conductive substrate, making electrical connections, encapsulating body, dividing substrate
DE10258193A1 (en) * 2002-12-12 2004-07-15 Osram Opto Semiconductors Gmbh LED chip manufacturing method for LED light source, involves filling pouring material containing light-emission material and light-emission transformation material, into trenches of bonding layer inserted into injection mold
DE102008025756A1 (en) * 2008-05-29 2009-12-03 Osram Opto Semiconductors Gmbh A semiconductor device
DE102009036621A1 (en) * 2009-08-07 2011-02-10 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP4386789B2 (en) * 2004-05-12 2009-12-16 ローム株式会社 Method for manufacturing light-emitting diode element
JP2007324417A (en) * 2006-06-01 2007-12-13 Sharp Corp Semiconductor light-emitting device and manufacturing method therefor
US8227276B2 (en) * 2009-05-19 2012-07-24 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
US8227269B2 (en) * 2009-05-19 2012-07-24 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
KR20120081809A (en) * 2011-01-12 2012-07-20 삼성엘이디 주식회사 Method of depositing phosphor on semiconductor light emitting device and an apparatus for depositing phosphor on semiconductor light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998012757A1 (en) 1996-09-20 1998-03-26 Siemens Aktiengesellschaft Sealing material with wavelength converting effect, application and production process
DE10008203A1 (en) * 2000-02-23 2001-08-30 Vishay Semiconductor Gmbh Manufacturing electronic semiconducting components involves attaching semiconducting body to conductive substrate, making electrical connections, encapsulating body, dividing substrate
DE10258193A1 (en) * 2002-12-12 2004-07-15 Osram Opto Semiconductors Gmbh LED chip manufacturing method for LED light source, involves filling pouring material containing light-emission material and light-emission transformation material, into trenches of bonding layer inserted into injection mold
DE102008025756A1 (en) * 2008-05-29 2009-12-03 Osram Opto Semiconductors Gmbh A semiconductor device
DE102009036621A1 (en) * 2009-08-07 2011-02-10 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

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