JP2005167079A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2005167079A
JP2005167079A JP2003405983A JP2003405983A JP2005167079A JP 2005167079 A JP2005167079 A JP 2005167079A JP 2003405983 A JP2003405983 A JP 2003405983A JP 2003405983 A JP2003405983 A JP 2003405983A JP 2005167079 A JP2005167079 A JP 2005167079A
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light
phosphor
emitting device
led element
silica particles
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JP2005167079A5 (en
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Masahito Kawamura
雅人 河村
Atsushi Tsuzuki
敦 都築
Toshio Yamaguchi
寿夫 山口
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device wherein optical diffusivity is good without complicating manufacturing processes. <P>SOLUTION: The light emitting device is so constituted that a case 6 is sealed with sealing resin 7 in which phosphor 5A and silica particles 5B are mixed, and the phosphor 5A and the silica particles 5B are sedimented based on specific gravity and arranged at the periphery of an LED element 2. As a result, the phosphor 5A is sedimented in the state of variance into the silica particles 5B, and an optical diffusion part 5 can be formed. The silica particles 5B scatter blue light emitted from the LED element 2 and disperse it irregularly into the optical diffusion part 5, so that the phosphor 5A intermingled in the silica particle 5B is excited efficiently. As a result, the consumption of the phosphor which is required for obtaining white light can be reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、発光素子および発光装置に関し、特に、発光素子から放射される光を効率良く外部に取り出すことのできる発光装置に関する。   The present invention relates to a light-emitting element and a light-emitting device, and more particularly to a light-emitting device that can efficiently extract light emitted from the light-emitting element to the outside.

従来、ＬＥＤ（Light-Emitting Diode：発光ダイオード）素子を光源として使用し、ＬＥＤ素子から放射される光によって蛍光体を励起し、励起された蛍光体から放射される励起光とＬＥＤ素子から放射される光とを混合することにより生じる波長変換光を放射する発光装置がある。   Conventionally, an LED (Light-Emitting Diode) element is used as a light source, a phosphor is excited by light emitted from the LED element, and excitation light emitted from the excited phosphor and emitted from the LED element. There is a light-emitting device that emits wavelength-converted light that is generated by mixing light.

係る発光装置として、蛍光体と酸化マグネシウムからなる拡散剤をＬＥＤ素子を覆う樹脂ケースに混入したものがある（例えば、特許文献１参照。）。   As such a light emitting device, there is one in which a diffusing agent made of phosphor and magnesium oxide is mixed in a resin case covering an LED element (for example, see Patent Document 1).

図４は、特許文献１に記載される発光装置の断面図である、この発光装置１０は、リードフレーム１１および１２と、リードフレーム１１に搭載されるＬＥＤ素子１３と、ＬＥＤ素子１３から放射される光によって励起される蛍光剤１４と、ＬＥＤ素子１３から放射される光を拡散する拡散剤１６と、リードフレーム１１，１２、ＬＥＤ素子１３、蛍光剤１４、および拡散剤１６を一体的に覆って封止する砲弾形状の樹脂ケース１５とを有して形成されている。   FIG. 4 is a cross-sectional view of the light emitting device described in Patent Document 1. The light emitting device 10 is emitted from the lead frames 11 and 12, the LED element 13 mounted on the lead frame 11, and the LED element 13. Fluorescent agent 14 excited by light, diffusing agent 16 for diffusing the light emitted from LED element 13, lead frames 11 and 12, LED element 13, fluorescent agent 14, and diffusing agent 16 are integrally covered. And a bullet-shaped resin case 15 to be sealed.

この発光装置１０によると、樹脂ケース１５に混入された拡散剤１６がＬＥＤ素子１３から放射される光を拡散するため、蛍光剤１４の劣化が抑えられて発光色の変化や光量の低下が生じにくくなり、長時間の使用を可能にすることができる。
特許第３０６５５４４号公報（図１） According to the light emitting device 10, the diffusing agent 16 mixed in the resin case 15 diffuses the light emitted from the LED element 13, so that the deterioration of the fluorescent agent 14 is suppressed, and the emission color changes and the light amount decreases. It becomes difficult and can be used for a long time.
Japanese Patent No. 3065554 (FIG. 1)

しかし、特許文献１に記載された発光装置によると、安定した長期使用性を実現するには樹脂ケース１５内に均一に蛍光剤１４および拡散剤１６を分散させる必要があるため、樹脂材料、蛍光剤１４、および拡散剤１６の厳密な混合、および製造管理が必要となって製造工程が煩雑化するという問題がある。   However, according to the light emitting device described in Patent Document 1, it is necessary to uniformly disperse the fluorescent agent 14 and the diffusing agent 16 in the resin case 15 in order to realize stable long-term usability. There is a problem that the manufacturing process becomes complicated because strict mixing of the agent 14 and the diffusing agent 16 and manufacturing management are required.

従って、本発明の目的は、製造工程を煩雑化することなく、光拡散性が良好な発光装置を提供することにある。   Accordingly, an object of the present invention is to provide a light-emitting device with good light diffusivity without complicating the manufacturing process.

本発明は、上記の目的を達成するため、ＬＥＤ素子を光透過性材料で封止して形成される発光装置において、前記光透過性材料は、粒状の光拡散体と蛍光体とを混合した混合体を含むとともに前記混合体を前記ＬＥＤ素子の周囲に配置した光拡散部を有することを特徴とする発光装置を提供する。   In order to achieve the above object, the present invention provides a light emitting device formed by sealing an LED element with a light transmissive material, wherein the light transmissive material is a mixture of a granular light diffuser and a phosphor. There is provided a light emitting device including a light diffusion portion including a mixture and having the mixture disposed around the LED element.

前記粒状の光拡散体は、前記蛍光体の粒径より小なる粒径を５〜１０重量％含むことが好ましい。   The granular light diffuser preferably contains 5 to 10% by weight of a particle size smaller than the particle size of the phosphor.

前記粒状の光拡散体は、エポキシシランの表面処理を施されたシリカ粒子を用いることができる。   As the granular light diffuser, silica particles subjected to epoxysilane surface treatment can be used.

また、本発明は、上記の目的を達成するため、青色光を放射するＬＥＤ素子を光透過性材料で封止して形成される発光装置において、前記光透過性材料は、粒径０．２〜８μｍのシリカ粒子を５〜１０重量％と、黄色光を放射する粒径１０μｍの黄色蛍光体を１８重量％とを混合した混合体を含むとともに前記混合体を前記ＬＥＤ素子の周囲に配置した光拡散部を有することを特徴とする発光装置を提供する。   Further, in order to achieve the above object, the present invention provides a light emitting device formed by sealing a blue light emitting LED element with a light transmissive material, wherein the light transmissive material has a particle size of 0.2. The mixture includes a mixture of 5 to 10% by weight of silica particles of ˜8 μm and 18% by weight of yellow phosphor having a particle diameter of 10 μm that emits yellow light, and the mixture is disposed around the LED element. Provided is a light-emitting device including a light diffusion portion.

本発明の発光装置によれば、ＬＥＤ素子の周囲に粒状の光拡散体と蛍光体とを混合した混合体を沈降させることによって光拡散部を形成するため、製造工程を煩雑化せずに良好な光拡散性を発光装置に付与することができる。   According to the light emitting device of the present invention, the light diffusing portion is formed by settling a mixture of a granular light diffusing material and a phosphor around the LED element, so that it is good without complicating the manufacturing process. Light diffusibility can be imparted to the light emitting device.

また、本発明の発光装置によれば、青色光を放射するＬＥＤ素子の周囲に粒状の粒径０．２〜８μｍのシリカ粒子５〜１０重量％と粒径１０μｍの黄色蛍光体１８重量％とを混合した混合体を沈降させることによって光拡散部を形成するため、製造工程を煩雑化せずに良好な光拡散性を発光装置に付与することができる。   Further, according to the light emitting device of the present invention, 5 to 10% by weight of silica particles having a particle size of 0.2 to 8 μm and 18% by weight of yellow phosphor having a particle size of 10 μm around the LED element emitting blue light. Since the light diffusing portion is formed by precipitating the mixture in which light is mixed, good light diffusibility can be imparted to the light emitting device without complicating the manufacturing process.

図１は、本発明の第１の実施の形態に係る表面実装型発光装置の断面図である。この発光装置１は、ＧａＮ系半導体化合物からなるフリップチップタイプのＬＥＤ素子２と、ＬＥＤ素子２を外部回路と電気的に接続するための配線パターン３Ａ、３Ｂを有する基板部３と、ＬＥＤ素子２の電極と配線パターン３Ａ、３Ｂとを電気的に接続するＡｕバンプ４と、ＬＥＤ素子２の周囲を覆うように配置される蛍光体５Ａおよび光拡散剤としてのシリカ粒子５Ｂからなる光拡散部５と、光を外部に放射させるように傾斜形状に形成される反射面６Ａを有し、アクリル樹脂等の樹脂材料で形成されるケース部６と、ケース部６のＬＥＤ素子収容部に注入されてＬＥＤ素子２および光拡散部５を封止する光透過性の封止樹脂７によって構成されている。   FIG. 1 is a cross-sectional view of a surface-mounted light-emitting device according to the first embodiment of the present invention. The light emitting device 1 includes a flip chip type LED element 2 made of a GaN-based semiconductor compound, a substrate portion 3 having wiring patterns 3A and 3B for electrically connecting the LED element 2 to an external circuit, and the LED element 2 A light diffusing portion 5 comprising an Au bump 4 for electrically connecting the electrodes of the LED 3 and the wiring patterns 3A, 3B, a phosphor 5A arranged so as to cover the periphery of the LED element 2, and silica particles 5B as a light diffusing agent. And having a reflecting surface 6A formed in an inclined shape so as to radiate light to the outside, and injected into a case portion 6 formed of a resin material such as acrylic resin, and an LED element housing portion of the case portion 6 The light-transmitting sealing resin 7 that seals the LED element 2 and the light diffusion portion 5 is used.

ＬＥＤ素子２は、サファイア基板上に有機金属化合物気相成長法（ＭＯＶＰＥ）によってｎ型層、発光層を含む層、およびｐ型層を結晶成長させることによって形成されており、発光波長４５０〜４８０ｎｍの青色光を主としてサファイア基板側から放射するように形成されている。   The LED element 2 is formed by crystal growth of an n-type layer, a layer including a light-emitting layer, and a p-type layer on a sapphire substrate by metal organic compound vapor phase epitaxy (MOVPE), and an emission wavelength of 450 to 480 nm. The blue light is emitted mainly from the sapphire substrate side.

基板部３は、ガラスエポキシ材料によって形成されており、銅箔によって外周を覆うように設けられる配線パターン３Ａ、３Ｂを有している。配線パターン３Ａ、３Ｂは、基板部３の上面から側面、および底部にかけて設けられており、半田接合等によって図示しない外部回路への表面実装が可能である。   The board | substrate part 3 is formed with the glass epoxy material, and has wiring pattern 3A, 3B provided so that an outer periphery may be covered with copper foil. The wiring patterns 3A and 3B are provided from the top surface to the side surface and the bottom portion of the substrate portion 3, and can be surface-mounted on an external circuit (not shown) by solder bonding or the like.

光拡散部５は、光拡散剤として光透過性を有する粒径０．２〜８μｍのシリカ粒子５Ｂを有し、シリカ粒子５Ｂは、樹脂中での分散性を向上させるためにエポキシシランを表面に塗布している。シリカ粒子５Ｂの添加量は、５〜１０重量％である。また、蛍光体５Ａは、黄色蛍光体であるＣｅ：ＹＡＧであり、粒径は約１０μｍである。Ｃｅ：ＹＡＧはＬＥＤ素子２から放射される光によって励起されて黄色光を放射する。蛍光体５Ａの添加量は、１８重量％である。   The light diffusion part 5 has silica particles 5B having a particle size of 0.2 to 8 [mu] m having light permeability as a light diffusing agent, and the silica particles 5B are coated with epoxy silane to improve dispersibility in the resin. It is applied to. The addition amount of the silica particles 5B is 5 to 10% by weight. The phosphor 5A is Ce: YAG, which is a yellow phosphor, and has a particle size of about 10 μm. Ce: YAG is excited by the light emitted from the LED element 2 to emit yellow light. The amount of phosphor 5A added is 18% by weight.

ケース部６は、基板部３上に貼り付け固定されており、反射面６Ａを側面とする窪みの内部にＬＥＤ素子２、光拡散部５、および封止樹脂７を有している。反射面６Ａは、スパッタリングによって表面にアルミニウムの薄膜を光反射膜として形成されている。   The case part 6 is affixed and fixed on the board | substrate part 3, and has the LED element 2, the light-diffusion part 5, and the sealing resin 7 inside the hollow which makes 6 A of reflective surfaces side. The reflecting surface 6A is formed with a thin aluminum film as a light reflecting film on the surface by sputtering.

封止樹脂７は、光透過性および成形性に優れるエポキシ樹脂によって形成されており、樹脂中に上記した割合で混入された蛍光体５Ａおよびシリカ粒子５ＢをＬＥＤ素子２の周囲に沈降させることにより設けられる光拡散部５と、光拡散部５の外側に配置される透明部とを有している。   The sealing resin 7 is formed of an epoxy resin excellent in light transmittance and moldability, and the phosphor 5A and the silica particles 5B mixed in the resin in the above-described ratio are settled around the LED element 2. It has the light-diffusion part 5 provided, and the transparent part arrange | positioned on the outer side of the light-diffusion part 5.

次に、第１の実施の形態の発光装置１の製造工程について以下に説明する。   Next, the manufacturing process of the light emitting device 1 according to the first embodiment will be described below.

図２は、発光装置の製造工程を示す断面図であり、（ａ）はＬＥＤ素子の搭載工程、（ｂ）は封止樹脂の注入工程、（ｃ）は封止樹脂の硬化工程である。まず、図２（ａ）に示すように、配線パターン３Ａおよび３Ｂを設けられた長尺上の基板材料に別工程で射出成形されたケース部６を貼り付け固定する。ケース部６にはエッチング等によって予め反射面６Ａに応じた孔が開口されている。次に、ケース部６の底部、すなわち、配線パターン３Ａおよび３Ｂの露出した基板材料の表面にＡｕバンプ４を介してＬＥＤ素子２を超音波接合する。ＬＥＤ素子２は、長尺上の基板材料に対して複数を所定の間隔で配置することができる。   2A and 2B are cross-sectional views illustrating the manufacturing process of the light emitting device, where FIG. 2A is a step of mounting an LED element, FIG. 2B is a sealing resin injection process, and FIG. 2C is a sealing resin curing process. First, as shown in FIG. 2A, a case portion 6 injection-molded in a separate process is attached and fixed to a long substrate material provided with wiring patterns 3A and 3B. A hole corresponding to the reflecting surface 6A is previously opened in the case portion 6 by etching or the like. Next, the LED element 2 is ultrasonically bonded to the bottom portion of the case portion 6, that is, the exposed surface of the substrate material of the wiring patterns 3 </ b> A and 3 </ b> B through the Au bump 4. A plurality of LED elements 2 can be arranged at a predetermined interval with respect to a long substrate material.

次に、図２（ｂ）に示すように、蛍光体５Ａおよびシリカ粒子５Ｂを前述の割合でエポキシ樹脂に混合し、十分な攪拌を行って凝集のない混合体とする。次に、ＬＥＤ素子２を固定されているケース部６の孔に蛍光体５Ａおよびシリカ粒子５Ｂを混入されたエポキシ樹脂を注入する。   Next, as shown in FIG. 2 (b), the phosphor 5A and the silica particles 5B are mixed with the epoxy resin in the above-described proportions and sufficiently stirred to obtain a mixture without aggregation. Next, the epoxy resin mixed with the phosphor 5A and the silica particles 5B is injected into the hole of the case portion 6 to which the LED element 2 is fixed.

次に、図２（ｃ）に示すように、エポキシ樹脂を注入した状態で一定時間放置してＬＥＤ素子２の周囲に蛍光体５Ａおよびシリカ粒子５Ｂを沈降させる。このとき、蛍光体５Ａおよびシリカ粒子５Ｂは、分散状態を保ったまま沈降し、堆積することによって光拡散部５を形成する。一方、蛍光体５Ａおよびシリカ粒子５Ｂと分離したエポキシ樹脂は透明となり、光拡散部５上に配置される。次に、全体を１２０℃から１８０℃の温度で加熱処理することによってエポキシ樹脂を熱硬化させることによりケース部６と一体化した封止樹脂７とする。次に、ダイサーによってＬＥＤ素子２の配置間隔に応じた間隔で全体を切り分けることにより発光装置１が得られる。   Next, as shown in FIG. 2C, the phosphor 5A and the silica particles 5B are allowed to settle around the LED element 2 by being allowed to stand for a certain period of time with the epoxy resin injected. At this time, the phosphor 5A and the silica particles 5B settle while maintaining a dispersed state, and form the light diffusion portion 5 by being deposited. On the other hand, the epoxy resin separated from the phosphor 5 </ b> A and the silica particles 5 </ b> B becomes transparent and is disposed on the light diffusion portion 5. Next, the whole is heat-treated at a temperature of 120 ° C. to 180 ° C. to thermally cure the epoxy resin, whereby the sealing resin 7 integrated with the case portion 6 is obtained. Next, the light-emitting device 1 is obtained by cutting the whole with an interval according to the arrangement interval of the LED elements 2 by a dicer.

次に、第１の実施の形態の発光装置１の動作について以下に説明する。   Next, operation | movement of the light-emitting device 1 of 1st Embodiment is demonstrated below.

発光装置１の配線パターン３Ａおよび３Ｂを図示しない電源装置に接続して通電することにより、ＬＥＤ素子２の発光層において発光し、主として発光層の上側に配置されるサファイア基板からＬＥＤ素子２の外部に光が放射される。サファイア基板から放射された光のうち、蛍光体５Ａに照射される光は蛍光体５Ａを励起させる。励起された蛍光体５Ａは黄色の励起光を放射する。また、シリカ粒子５Ｂに照射される光はシリカ粒子５Ｂの形状に応じて不規則な方向に透過、散乱を繰り返しながら伝播し、ケース部６内部に行き渡るとともに反射面６Ａによって反射される。ケース部６内部において、ＬＥＤ素子２から放射された青色光と蛍光体５Ａの励起に基づいて生じる励起光とが混合されることによって白色光となり、封止樹脂７を介して外部放射される。   When the wiring patterns 3A and 3B of the light emitting device 1 are connected to a power supply device (not shown) and energized, light is emitted from the light emitting layer of the LED element 2, and mainly from the sapphire substrate disposed above the light emitting layer to the outside of the LED element 2. The light is emitted. Of the light emitted from the sapphire substrate, the light applied to the phosphor 5A excites the phosphor 5A. The excited phosphor 5A emits yellow excitation light. Further, the light applied to the silica particles 5B propagates in an irregular direction according to the shape of the silica particles 5B while being repeatedly transmitted and scattered, reaches the inside of the case portion 6 and is reflected by the reflecting surface 6A. Inside the case portion 6, the blue light emitted from the LED element 2 and the excitation light generated based on the excitation of the phosphor 5 </ b> A are mixed to become white light, which is emitted outside via the sealing resin 7.

上記した第１の実施の形態によると、以下の効果が得られる。
（１）蛍光体５Ａとシリカ粒子５Ｂとを混合したエポキシ樹脂でケース部６を封止し、蛍光体５Ａとシリカ粒子５Ｂを比重に基づいて沈降させてＬＥＤ素子２の周囲に配置するようにしたため、シリカ粒子５Ｂ中に蛍光体５Ａが分散した状態で沈降して光拡散部５を形成することができる。シリカ粒子５ＢはＬＥＤ素子２から放射された青色光を散乱して光拡散部５中に不規則に分散させることにより、シリカ粒子５Ｂ中に混在している蛍光体５Ａが効率良く励起される。このため、外部への光拡散性が向上するとともに、白色光を得るのに必要な蛍光体の使用量を低減することができる。
（２）エポキシシランによる表面処理を施したシリカ粒子５Ｂと蛍光体５Ａとを混合しているため、エポキシ樹脂中へシリカ粒子５Ｂおよび蛍光体５Ａの分散性が向上し、特に、蛍光体５Ａの粒子同士が物理的に接触して分散性が低下することを防げる。 According to the first embodiment described above, the following effects are obtained.
(1) The case portion 6 is sealed with an epoxy resin in which the phosphor 5A and the silica particles 5B are mixed, and the phosphor 5A and the silica particles 5B are settled based on the specific gravity so as to be arranged around the LED element 2. Therefore, the light diffusion portion 5 can be formed by sedimentation in a state where the phosphor 5A is dispersed in the silica particles 5B. The silica particles 5B scatter blue light emitted from the LED element 2 and disperse it irregularly in the light diffusing section 5, whereby the phosphors 5A mixed in the silica particles 5B are efficiently excited. For this reason, while being able to improve the light diffusibility to the exterior, the usage-amount of the fluorescent substance required in order to obtain white light can be reduced.
(2) Since the silica particles 5B subjected to the surface treatment with epoxysilane and the phosphor 5A are mixed, the dispersibility of the silica particles 5B and the phosphor 5A in the epoxy resin is improved. It is possible to prevent the particles from physically contacting each other and the dispersibility from being lowered.

なお、第１の実施の形態では、青色光を発するＬＥＤ素子２と、黄色光を発する蛍光体５Ａによって白色光を生じる波長変換型の発光装置１を説明したが、白色光を生じる波長変換は上記したものに限定されず、例えば、紫外光を発するＬＥＤ素子２と紫外光によって励起されるＲＧＢ蛍光体を用いた波長変換であっても良い。   In the first embodiment, the wavelength conversion type light emitting device 1 that generates white light by the LED element 2 that emits blue light and the phosphor 5A that emits yellow light has been described. For example, wavelength conversion using an LED element 2 that emits ultraviolet light and an RGB phosphor that is excited by the ultraviolet light may be used.

また、ＬＥＤ素子２についても、第１の実施の形態で説明したフリップチップタイプのＬＥＤ素子２に代えて光放射面側に電極を有するフェイスアップタイプのＬＥＤ素子２を用いることも可能である。また、フリップチップタイプのＬＥＤ素子２を窒化アルミニウム等のサブマウント部材を介して接続するものであっても良い。   As for the LED element 2, it is also possible to use a face-up type LED element 2 having an electrode on the light emitting surface side instead of the flip chip type LED element 2 described in the first embodiment. Further, the flip-chip type LED element 2 may be connected via a submount member such as aluminum nitride.

また、基板部３についてもガラスエポキシ以外の材料としてアクリル樹脂、エポキシ樹脂等の材料を用いることも可能である。   Moreover, it is also possible to use materials, such as an acrylic resin and an epoxy resin, as materials other than glass epoxy also about the board | substrate part 3. FIG.

また、ケース部６についてもアクリル樹脂以外の材料としてナイロン樹脂、エポキシ樹脂、あるいはセラミック等の材料を用いることも可能である。   Also, the case portion 6 can be made of a material other than acrylic resin such as nylon resin, epoxy resin, or ceramic.

また、封止樹脂７を構成する光透過性材料についてもエポキシ樹脂に限定されるものではなく、シリコン樹脂を用いることも可能である。   Further, the light transmissive material constituting the sealing resin 7 is not limited to the epoxy resin, and a silicon resin can also be used.

また、第１の実施の形態では、長尺状の基板材料に対してケース部６および複数のＬＥＤ素子２を搭載し、ダイサーで切断して発光装置１とする製造工程について説明したが、例えば、ケース部６を構成するウエハー状の第１の材料にエッチング等によって複数の開口を形成し、ウエハー状の第２の材料に配線パターンを形成して第１の材料と貼り付け接合し、ＬＥＤ素子２の搭載、蛍光体５Ａおよびシリカ粒子５Ｂを混入された封止樹脂７の注入、光拡散部５の形成、および封止樹脂７の熱硬化を行った後にダイサー、あるいはレーザー等で切断して発光装置１を形成するようにしても良い。   Moreover, in 1st Embodiment, although the case part 6 and the some LED element 2 were mounted with respect to a elongate board | substrate material, it cut | disconnected with the dicer and demonstrated the manufacturing process used as the light-emitting device 1, for example, A plurality of openings are formed by etching or the like in the wafer-shaped first material constituting the case portion 6, a wiring pattern is formed in the wafer-shaped second material, and the first material is bonded and bonded to the LED. After the element 2 is mounted, the sealing resin 7 mixed with the phosphor 5A and the silica particles 5B is injected, the light diffusion portion 5 is formed, and the sealing resin 7 is thermally cured, it is cut with a dicer or a laser. Thus, the light emitting device 1 may be formed.

図３は、本発明の第２の実施の形態に係る表面実装型発光装置の断面図である。この発光装置１は、第１の実施の形態で説明したケース部６を設けずに蛍光体５Ａおよびシリカ粒子５Ｂを混入された封止樹脂７でＬＥＤ素子２を封止した構成を有している。また、その他の構成において、第１の実施の形態と同一の部分については共通の引用数字を付している。   FIG. 3 is a cross-sectional view of a surface-mounted light-emitting device according to the second embodiment of the present invention. The light emitting device 1 has a configuration in which the LED element 2 is sealed with a sealing resin 7 in which the phosphor 5A and the silica particles 5B are mixed without providing the case portion 6 described in the first embodiment. Yes. In other configurations, the same parts as those in the first embodiment are denoted by common reference numerals.

第２の実施の形態の発光装置１では、配線パターン３Ａおよび３Ｂを設けられた長尺上の基板材料を金型に収容し、金型内に蛍光体５Ａとシリカ粒子５Ｂとを混合した封止樹脂７を充填する方法により形成する。   In the light emitting device 1 of the second embodiment, a long substrate material provided with the wiring patterns 3A and 3B is accommodated in a mold, and the phosphor 5A and the silica particles 5B are mixed in the mold. It is formed by a method of filling the stop resin 7.

次に、第２の実施の形態の発光装置１の製造工程について以下に説明する。   Next, the manufacturing process of the light emitting device 1 according to the second embodiment will be described below.

まず、長尺上の基板材料上に設けられる配線パターン３Ａおよび３Ｂに位置するように所定の間隔でＡｕバンプ４を介してＬＥＤ素子２を超音波接合する。次に、ＬＥＤ素子２を接合された基板材料を金型で包囲して封止樹脂７を充填し、一定時間放置してＬＥＤ素子２の周囲に蛍光体５Ａおよびシリカ粒子５Ｂを沈降させる。このとき、蛍光体５Ａおよびシリカ粒子５Ｂは、分散状態を保ったまま沈降し、堆積することによって光拡散部５を形成する。一方、蛍光体５Ａおよびシリカ粒子５Ｂと分離した封止樹脂７は透明となり、光拡散部５上に配置される。次に、金型とともに全体を１２０℃から１８０℃の温度で加熱処理することによって封止樹脂７を熱硬化させることにより基板材料と一体化する。次に、金型を分離する。次に、ダイサーによってＬＥＤ素子２の配置間隔に応じた間隔で全体を切り分けることにより発光装置１が得られる。   First, the LED element 2 is ultrasonically bonded via the Au bumps 4 at a predetermined interval so as to be positioned on the wiring patterns 3A and 3B provided on the long substrate material. Next, the substrate material to which the LED element 2 is bonded is surrounded by a mold, filled with the sealing resin 7, and left for a certain period of time to cause the phosphor 5A and the silica particles 5B to settle around the LED element 2. At this time, the phosphor 5A and the silica particles 5B settle while maintaining a dispersed state, and form the light diffusion portion 5 by being deposited. On the other hand, the sealing resin 7 separated from the phosphor 5 </ b> A and the silica particles 5 </ b> B becomes transparent and is disposed on the light diffusion portion 5. Next, the sealing resin 7 is integrated with the substrate material by thermally curing the mold together with the mold at a temperature of 120 ° C. to 180 ° C. Next, the mold is separated. Next, the light-emitting device 1 is obtained by cutting the whole with an interval according to the arrangement interval of the LED elements 2 by a dicer.

上記した第２の実施の形態によると、第１の実施の形態の好ましい効果に加えてＬＥＤ素子２の上側だけでなく側面方向にも波長変換された白色光を効率良く外部放射させることが可能になる。   According to the second embodiment described above, in addition to the preferable effect of the first embodiment, it is possible to efficiently radiate externally the white light wavelength-converted not only above the LED element 2 but also in the side surface direction. become.

なお、上記した第１および第２の実施の形態で説明した発光装置１の封止樹脂７に凸状、凹状といった光学形状を設けて放射される光の集光、あるいは拡散を行う構成としても良い。   In addition, the sealing resin 7 of the light emitting device 1 described in the first and second embodiments described above may be configured to condense or diffuse the emitted light by providing an optical shape such as a convex shape or a concave shape. good.

本発明の第１の実施の形態に係る表面実装型発光装置の断面図である。1 is a cross-sectional view of a surface mount light emitting device according to a first embodiment of the present invention. 本発明の発光装置の製造工程を示す断面図であり、（ａ）はＬＥＤ素子の搭載工程、（ｂ）は封止樹脂の注入工程、（ｃ）は封止樹脂の硬化工程である。It is sectional drawing which shows the manufacturing process of the light-emitting device of this invention, (a) is the mounting process of a LED element, (b) is the injection | pouring process of sealing resin, (c) is the hardening process of sealing resin. 本発明の第２の実施の形態に係る表面実装型発光装置の断面図である。It is sectional drawing of the surface mount-type light-emitting device based on the 2nd Embodiment of this invention. 特許文献１に記載される発光装置の断面図である、It is sectional drawing of the light-emitting device described in patent document 1,

符号の説明Explanation of symbols

１、発光装置 ２、ＬＥＤ素子 ３、基板部 ３Ａ、配線パターン
４、バンプ ５、光拡散部 ５Ａ、蛍光体 ５Ｂ、シリカ粒子
６、ケース部 ６Ａ、反射面 ７、封止樹脂 １０、発光装置
１１、リードフレーム １３、ＬＥＤ素子 １４、蛍光剤
１５、樹脂ケース １６、拡散剤 DESCRIPTION OF SYMBOLS 1, Light-emitting device 2, LED element 3, Board | substrate part 3A, Wiring pattern 4, Bump 5, Light-diffusion part 5A, Phosphor 5B, Silica particle 6, Case part 6A, Reflective surface 7, Sealing resin 10, Light-emitting device 11 , Lead frame 13, LED element 14, fluorescent agent 15, resin case 16, diffusing agent

Claims (4)

ＬＥＤ素子を光透過性材料で封止して形成される発光装置において、
前記光透過性材料は、粒状の光拡散体と蛍光体とを混合した混合体を含むとともに前記混合体を前記ＬＥＤ素子の周囲に配置した光拡散部を有することを特徴とする発光装置。 In a light emitting device formed by sealing an LED element with a light transmissive material,
The light-transmitting material includes a mixture of a granular light diffuser and a phosphor, and has a light diffusion portion in which the mixture is disposed around the LED element. 前記粒状の光拡散体は、前記蛍光体の粒径より小なる粒径を５〜１０重量％含むことを特徴とする請求項１記載の発光装置。   2. The light emitting device according to claim 1, wherein the granular light diffuser includes 5 to 10% by weight of a particle size smaller than the particle size of the phosphor. 前記粒状の光拡散体は、エポキシシランの表面処理を施されたシリカ粒子であることを特徴とする請求項１記載の発光装置。   The light-emitting device according to claim 1, wherein the granular light diffuser is silica particles that have been subjected to a surface treatment with epoxysilane. 青色光を放射するＬＥＤ素子を光透過性材料で封止して形成される発光装置において、
前記光透過性材料は、粒径０．２〜８μｍのシリカ粒子を５〜１０重量％と、黄色光を放射する粒径１０μｍの黄色蛍光体を１８重量％とを混合した混合体を含むとともに前記混合体を前記ＬＥＤ素子の周囲に配置した光拡散部を有することを特徴とする発光装置。

In a light emitting device formed by sealing a blue light emitting LED element with a light transmissive material,
The light transmissive material includes a mixture of 5 to 10% by weight of silica particles having a particle diameter of 0.2 to 8 μm and 18% by weight of a yellow phosphor having a particle diameter of 10 μm that emits yellow light. A light emitting device comprising: a light diffusion portion in which the mixture is arranged around the LED element.

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