JP2001210872A - Semiconductor light emitting device and manufacturing method thereof - Google Patents

Semiconductor light emitting device and manufacturing method thereof

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Publication number
JP2001210872A
JP2001210872A JP2000017475A JP2000017475A JP2001210872A JP 2001210872 A JP2001210872 A JP 2001210872A JP 2000017475 A JP2000017475 A JP 2000017475A JP 2000017475 A JP2000017475 A JP 2000017475A JP 2001210872 A JP2001210872 A JP 2001210872A
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JP
Japan
Prior art keywords
led chip
recess
phosphor
housing
emitting device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2000017475A
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Japanese (ja)
Inventor
Yasuhiko Matsushita
保彦 松下
Original Assignee
Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
三洋電機株式会社
鳥取三洋電機株式会社
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Application filed by Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, 三洋電機株式会社, 鳥取三洋電機株式会社 filed Critical Sanyo Electric Co Ltd
Priority to JP2000017475A priority Critical patent/JP2001210872A/en
Publication of JP2001210872A publication Critical patent/JP2001210872A/en
Application status is Pending legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

PROBLEM TO BE SOLVED: To prevent a semiconductor light emitting device in which light emission characteristics of a phosphor is identical in any area of the phosphor.
SOLUTION: This semiconductor light emitting device consists of a cabinet 200 of which the section is of an almost recessed shape and is provided with a hole part 220 in a recessed part 210, an LED chip 230 fit in the hole part 220, and a phosphor 260 formed on the top of the LED chip 230 and at the bottom of the recessed part 210. In the semiconductor light emitting device, the top of the LED chip 230 and the bottom of the recessed part 210 are located on almost the same plane.
COPYRIGHT: (C)2001,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は半導体発光装置及びその製造方法に関する。 The present invention relates to a semiconductor light emitting device and a manufacturing method thereof.

【0002】 [0002]

【従来の技術】半導体発光装置の一つにLED(Lig One of semiconductor light-emitting device LED (Lig
ht Emitting Diode)発光装置がある。 There are ht Emitting Diode) light emitting device.

【0003】前記LED発光装置は、小型で効率良く光を発光する為パーソナルコンピュータ等の電子機器から電光掲示板や信号器などの光源として幅広い分野で使用されている。 [0003] The LED light emitting device is used from an electronic device such as a personal computer to emit light efficiently at small in a wide range of fields as a light source such as an electric bulletin board or a ringer.

【0004】又、最近では赤色や青色だけでなく白色の光を発光するLEDに関する様々な技術が提案されている。 [0004] Also, in recent years various techniques related to LED emitting white light as well as the red and blue has been proposed.

【0005】例えば、特開平11−40858号公報では、断面が略凹型の筐体凹部中央に青色発光のLEDチップを接着し、前記LEDチップ上面と該LEDチップを除く凹部底面に蛍光物質を付着させることにより、前記LEDチップから発光された青色光を前記蛍光物質で波長変換させ、白色光を発光させる技術が開示されている。 [0005] For example, Japanese Laid-11-40858 and JP-sectional adheres the blue-emitting LED chips to the housing recess central substantially concave, attaching a fluorescent substance in the recess bottom surface except the LED chip top surface and said LED chip by the blue light emitted from the LED chip is wavelength converted by the fluorescent material, a technique for emitting white light is disclosed.

【0006】前記従来の発光装置について具体的に以下に説明する。 [0006] will be described below specifically for the conventional light emitting device.

【0007】図2は、前記従来のLED発光装置の断面図である。 [0007] Figure 2 is a cross-sectional view of the conventional LED device.

【0008】図2において、断面が略凹型の筐体100 [0008] In FIG. 2, the cross section is substantially concave housing 100
凹部110中央には、LEDチップ120が接着剤で接着されており、前記LEDチップ120は、絶縁基板上に例えばGaNからなるN型導電性を有するコンタクト層と、ノンドープ型InGANからなる活性層と、Ga The recess 110 center, and the LED chip 120 is bonded with adhesive, the LED chip 120, a contact layer having N type conductivity of GaN, for example, on an insulating substrate, and an active layer consisting of non-doped InGAN , Ga
NからなるP型導電性を有するクラッド層と、GaNからなるP型導電性を有するコンタクト層とを順に積層させた構造である。 A clad layer having P type conductivity comprising N, a structure obtained by laminating a contact layer in this order with a P-type conductivity comprising GaN.

【0009】又、前記LEDチップ120の上面と前記LEDチップ120を除く前記筐体凹部110底面には蛍光体130が付着されており、さらに、凹部110には樹脂が充満されている。 [0009] Also, the housing concave portion 110 bottom surface except for the upper surface and the LED chip 120 of the LED chip 120 is attached phosphor 130, further, the recesses 110 are filled with the resin.

【0010】前記発光装置を形成する際には、先ず、接着剤により筐体凹部110中央にLEDチップ120を接着すると共に、前記筐体凹部110を除く筐体100 [0010] When forming the light-emitting device, first, as to bond the LED chip 120 to the central housing recess 110 by an adhesive, the casing 100 excluding the housing recess 110
上面上にレジストマスクを形成する。 Forming a resist mask on the upper surface. このようにして形成した複数の筐体100を容器内に入れ、蛍光体と例えばSiO 2からなるゾルを混ぜ合わせたものを前記容器へと注入する。 Put a plurality of housings 100 formed in this manner in the container, to inject and those mixed sol comprising a phosphor and for example SiO 2 to the container.

【0011】その後、放置しておくと前記ゾル内の蛍光体130が、凹部110底面を除く筐体100上面に沈降する。 [0011] Thereafter, a phosphor 130 in said sol on standing is settled in a housing 100 top except recess 110 bottom.

【0012】続いて容器内の廃液を除去しLEDチップ120上に粒子状蛍光体が堆積した筐体100を120 [0012] Then the housing 100 which waste is removed particulate phosphor to the LED chip 120 on the vessel was deposited a 120
度に加熱した空気で乾燥させLEDチップ120上面と筐体凹部110底面以外に付着した蛍光体130をレジストマスクごと除去することによってLEDチップ12 LED chip 12 by removing each resist mask phosphors 130 deposited in addition to the LED chip 120 top and the housing recess 110 bottom surface and dried in a heated air whenever
0上面と該LEDチップ120を除く筐体凹部110底面に蛍光体130を形成する。 The housing recess 110 bottom surface with the exception of 0 top and the LED chip 120 to form the phosphor 130.

【0013】最後にLEDチップ120や蛍光体130 [0013] Finally, the LED chip 120 and the phosphor 130
を埃等から保護する為に筐体の凹部110に透光性のエポキシ樹脂を流し込み硬化させることにより、蛍光体を用いたLED発光装置が完成する。 By curing pouring translucent epoxy resin into the recess 110 of the housing in order to protect from dust or the like, LED light-emitting device is completed using the phosphor.

【0014】尚、前記筐体100下方には、外部から前記LEDチップ120のp型層又はn型層へと電流を流す為の外部電極150が形成されている。 [0014] Incidentally, wherein the housing 100 downwardly, the external electrodes 150 for supplying a current from the outside to the p-type layer or the n-type layer of the LED chip 120 is formed.

【0015】 [0015]

【発明が解決しようとする課題】前記従来の半導体発光装置では、上記筐体凹部110底面中央からLEDチップ120が突出するように形成されている。 In [Problems to be Solved The conventional semiconductor light emitting device, LED chips 120 are formed so as to protrude from the housing concave 110 bottom center. 又、上記筐体凹部110底面に蛍光体130を形成する際には、前記筐体100が複数個配置された容器中に、蛍光体13 Further, when forming the phosphor layers 130 in the housing recess 110 bottom surface, in a container in which the housing 100 is a plurality arranged, phosphor 13
0と例えばSiO 2からなるゾルを混ぜ合わせたものを注入している。 0, for example, are implanted those mixed sol comprising of SiO 2.

【0016】この為、前記LEDチップ120上面と該LEDチップ120を除く筐体凹部110底面に蛍光体130が沈着するまでにゾルの僅かな対流により、筐体凹部110から突出したLEDチップ120上面の蛍光体の厚さが場所により不均一となり易い。 [0016] Therefore, the slight convection sol until the LED chip 120 top and phosphor 130 to the housing recess 110 bottom surface with the exception of the LED chip 120 is deposited, the LED chip 120 upper surface protruding from the housing recess 110 easily in the thickness of the phosphor is not uniform by location.

【0017】その為、LEDチップ120上面内で蛍光体の配された場所により、発光色が異なるという問題が発生する。 [0017] Therefore, the distribution location of the phosphor LED chip 120 in the upper surface, the emission color is a problem that different occurs.

【0018】その結果、前記半導体発光装置から放射される光の波長が同一の半導体装置内でも位置により異なり、所望の発光色を得ることが困難である。 [0018] As a result, the wavelength of light emitted from the semiconductor light emitting device is different from the position in the same semiconductor device, it is difficult to obtain a desired emission color.

【0019】又、前記筐体凹部110から前記LEDチップ120が突出している為に、前記筐体凹部110底面の位置によって前記LEDチップ120の活性層から前記筐体凹部110底面までの距離(光路長)に差が生じ、前記筐体凹部110底面に形成された蛍光体130 [0019] Also, the order in which the LED chip 120 from the housing recess 110 protrudes, the distance of the position of the housing recess 110 bottom surface to the housing recess 110 bottom of the active layer of the LED chip 120 (optical path difference occurs long), formed in said housing recess 110 bottom phosphor 130
から発光される光の色相にばらつきが生じる。 Variation in hue of light emitted from the results.

【0020】 [0020]

【課題を解決するための手段】請求項1記載の半導体発光装置は、LEDチップと、上面に略凹状の凹部を有する筐体と、前記凹部に配され前記LEDチップからの光を吸収し波長変換して発光する蛍光体とを有し、前記凹部底面には穴部が形成されており、前記LEDチップ上面と前記筐体凹部底面は略同一平面上となるように、前記穴部に前記LEDチップを配置したことを特徴とする。 Means for Solving the Problems] The semiconductor light emitting device according to claim 1 includes a LED chip, a housing having a substantially concave recess on the upper surface, the wavelength absorbs light from being disposed in the recess the LED chip and a phosphor emitting converted and, above the bottom surface of the recess is formed with a hole, the housing recess bottom and the LED chip top surface so as to be substantially the same plane, the said hole characterized in that a LED chip.

【0021】請求項2記載の半導体発光装置の製造方法は、LEDチップと、上面に前記LEDチップを配置する為の穴部が形成された略凹状の凹部を有した筐体と、 The method for manufacturing a semiconductor light emitting device according to claim 2 includes a housing having an LED chip, a generally concave recess hole is formed for disposing the LED chip on the top surface,
前記LEDチップから送出された光を吸収し波長変換する蛍光体と、を有する半導体発光装置の形成方法であって、前記筐体の穴部に前記LEDチップを嵌め込む第1 A method of forming a semiconductor light-emitting device having a phosphor that absorbs wavelength converts the light transmitted from the LED chip, first fitting the LED chip into the hole of the casing
の工程と、蛍光体を含有した粘性の低い樹脂モールドを前記筐体の凹部に流し込む第2の工程と、前記樹脂モールド中に含まれた蛍光体を前記LEDチップ上面と前記筐体凹部底面に沈降させる第3の工程と、を有することを特徴とする。 Of the process, a second step of pouring a low resin molding viscosity containing a phosphor in the recess of the housing, the phosphor contained in the resin mold to the housing bottom surface of the recess and the LED chip top surface a third step of precipitating, and having a.

【0022】 [0022]

【発明の実施の形態】図1は、本発明を適用してなる実施例である半導体発光装置の断面図である。 Figure 1 DETAILED DESCRIPTION OF THE INVENTION is a cross-sectional view of a semiconductor light-emitting device which is an embodiment to which the present invention is applied.

【0023】図1において、断面が略凹状の例えばポリカーボネート樹脂からなる筐体200の凹部210中央には穴部220が形成されており、前記穴部220には例えば青色発光のLEDチップ230が、該LEDチップ230の上面と凹部210底面が同じ平面上となるように穴部220に嵌め込まれている。 [0023] In FIG. 1, in cross-section are formed holes 220 in the recess 210 center housing 200 made of a substantially concave as polycarbonate resin, the said hole 220 for example a blue-emitting LED chips 230, top and recess 210 bottom surface of the LED chip 230 is fitted in the hole 220 so as to be on the same plane.

【0024】又、前記凹部210下方には、前記LED [0024] Also, the recess 210 in the lower, the LED
チップ230に形成されたp型電極とn型電極に夫々電気的に接続可能な第1の電極240と第2の電極250 The first electrode 240 of each can be electrically connected to the p-type electrode and the n-type electrode formed on the chip 230 and the second electrode 250
が配置されている。 There has been placed.

【0025】前記LEDチップ230上面と前記凹部2 [0025] The said LED chip 230 top recess 2
10底面には例えばイットリウム・アルミニウム・ガーネット(YAG)系蛍光体からなる蛍光体260が形成されており、前記凹部210には例えば透光性エポキシ樹脂からなる樹脂270が充填されている。 The 10 bottom is formed with a fluorescent material 260 made of yttrium aluminum garnet (YAG) phosphor example, in the recess 210 of the resin 270 formed of, for example, translucent epoxy resin is filled.

【0026】次に、図1に示すLEDチップ230について具体的に以下に説明する。 Next, specifically described below LED chip 230 shown in FIG.

【0027】前記LEDチップ230は、サファイア基板上に例えばGaNからなるバッファ層を、該バッファ層上にn型GaNクラッド層を、該n型GaNクラッド層上にInGaN/GaNの周期的なヘテロ構造により構成された多重量子井戸(MQW)構造のInGaN/G [0027] The LED chip 230, a buffer layer made of GaN, for example, on a sapphire substrate, the n-type GaN clad layer on the buffer layer, periodic heterostructure InGaN / GaN in the n-type GaN clad layer the multiple quantum well (MQW) structure composed of InGaN / G
aN活性層を、該InGaN/GaN活性層上にp型A The aN active layer, p-type A in the InGaN / GaN active layer
lGaNクラッド層を、該p型AlGaNクラッド層上にp型GaNコンタクト層を設けた構造である。 The lGaN cladding layer, a structure in which a p-type GaN contact layer on the p-type AlGaN cladding layer. 又、前記p型GaNコンタクト層上には透明電極を介したp型電極280が、前記n型GaN層の一部表面にはn型電極290が形成されている。 Further, the p-type p-type electrode 280 through the transparent electrode on the GaN contact layer is a portion of the surface of the n-type GaN layer are formed n-type electrode 290.

【0028】次に、本実施例のLEDチップ230の製造方法について以下に述べる。 [0028] Next, a method of manufacturing the LED chip 230 of the present embodiment will be described below.

【0029】先ず、有機洗浄及び熱処理により洗浄したサファイヤ基板上に、約600度の高温中でトリメチルガリウム(Ga(CH 33 )ガス、アンモニアガスを流し、MOCVD法でGaNからなる薄膜のバッファ層を形成する。 [0029] First, on a sapphire substrate was cleaned by an organic washing and heat treatment, trimethyl gallium in a high temperature of about 600 degrees (Ga (CH 3) 3) gas, flowing ammonia gas, a buffer of a thin film of GaN by MOCVD to form a layer.

【0030】続いて、基板温度を約1100度に保ち、 [0030] Subsequently, the substrate temperature is kept to about 1100 degrees,
前記バッファ層上にトリメチルガリウム(Ga(C Trimethyl gallium on the buffer layer (Ga (C
33 )ガス、アンモニアガス、ドーパントガスとしてSiH 4を流すことにより、n型GaNクラッド層を形成する。 H 3) 3) gas, ammonia gas, by flowing SiH 4 as dopant gas, thereby forming an n-type GaN clad layer.

【0031】その後、アンモニア(NH 3 )と、トリメチルガリウム(Ga(CH 33 )ガスを流し込むことにより、GaNからなる薄膜バリア層を形成し、続いて、 [0031] Subsequently, ammonia (NH 3), by pouring a trimethylgallium (Ga (CH 3) 3) gas to form a thin barrier layer made of GaN, followed by
トリメチルガリウム(Ga(CH 33 )ガス、トリメチルインジウム(In(CH 33 )ガス、アンモニアを流し込むことによりIn 0.35 Ga 0.65 Nからなる量子井戸層を形成する。 Trimethyl gallium (Ga (CH 3) 3) gas, trimethyl indium (In (CH 3) 3) to form a quantum well layer made of In 0.35 Ga 0.65 N by pouring gas, ammonia.

【0032】この時、前記GaNバリア層及び前記In [0032] At this time, the GaN barrier layer and the In
0.35 Ga 0.65 N量子井戸層を同じ条件下で5層形成することにより、In 0.35 Ga 0.65 NとGaNの周期的なヘテロ構造により構成された多重量子井戸(MQW)構造のInGaN/GaN活性層が形成される。 By forming 0.35 Ga 0.65 N 5 layers of quantum well layers in the same conditions, InGaN / GaN active layer of In 0.35 Ga 0.65 N and a multiple quantum well constituted by periodic heterostructure GaN (MQW) structure It is formed.

【0033】次に、前記InGaN/GaN活性層上でトリメチルガリウム(Ga(CH 33 )ガス、トリメチルアルミニウム(Al(CH 33 )ガス、アンモニア、 Next, trimethyl gallium (Ga (CH 3) 3) on the InGaN / GaN active layer gas, trimethyl aluminum (Al (CH 3) 3) gas, ammonia,
ドーパントガスとしてCP 2 Mgを流し込み、p型のA Pouring CP 2 Mg as a dopant gas, p-type A
lGaNクラッド層を形成する。 To form a lGaN cladding layer.

【0034】その後、前記p型AlGaNクラッド層上で、アンモニア(NH 3 )と、トリメチルガリウム(G [0034] Thereafter, on the p-type AlGaN cladding layer, an ammonia (NH 3), trimethyl gallium (G
a(CH 33 )ガスと、ドーパントガスとしてCp 2 a (CH 3) 3) gas, Cp 2 M as a dopant gas
gを流し込み、p型のGaNコンタクト層を形成する。 Pouring g, to form a p-type GaN contact layer.

【0035】続いて、LEDチップ230に電極を形成させるために、前記p型GaNコンタクト層上にエッチングマスクを形成し、前記エッチングマスクが覆われていないn型GaNコンタクト層とInGaN/GaN活性層とp型AlGaNクラッド層とp型GaNコンタクト層の一部を反応性イオンエッチングにより除去する。 [0035] Then, in order to form an electrode on the LED chip 230, the p-type etching mask is formed on GaN contact layer, the n-type GaN contact layer etching mask is not covered with InGaN / GaN active layer the part of the p-type AlGaN cladding layer and the p-type GaN contact layer is removed by reactive ion etching.

【0036】その後、前記p型GaNコンタクト層上部と前記エッチング処理により表面が露出したn型GaN [0036] Thereafter, the p-type GaN contact layer upper to the surface by etching is exposed n-type GaN
コンタクト層上部に夫々真空蒸着法などを用いてp型電極280とn型電極290を形成する。 By using a respective vacuum deposition on the contact layer upper to form a p-type electrode 280 and the n-type electrode 290.

【0037】尚、前記p型GaNコンタクト層上部のp [0037] Incidentally, the p-type GaN contact layer top of p
型電極280は例えばニッケルと金の合金からなり、前記n型GaNコンタクト層上部のn型電極290はアルミニウム、シリコン、ニッケル、金等の合金で形成される。 Type electrode 280 is made of, for example, nickel and gold alloys, the n-type GaN contact layer upper part of the n-type electrode 290 is formed of aluminum, silicon, nickel, an alloy of gold or the like.

【0038】このようにして発光ピーク波長460nm The emission peak wavelength of 460nm In this way,
の青色発光LEDチップ230が形成された。 Blue LED chips 230 are formed.

【0039】次に、前記LEDチップ230を嵌め込んだ白色LED発光装置の製造方法について以下に説明する。 Next, described below a method for manufacturing the white LED device is fitted the LED chip 230.

【0040】先ず、インサート成形により成形可能であり、断面が略凹形状である例えばポリカーボネート樹脂からなる筐体200を形成し、前記筐体凹部210底面に前記p型電極280と接続させる為の第1電極240 [0040] First, moldable by insert molding, in cross section form a housing 200 made of for example polycarbonate resin substantially concave shape, the in order to connect with the p-type electrode 280 to the housing recess 210 bottom surface 1 electrode 240
と、前記n型電極290と接続させる為の第2電極25 When the second electrode 25 for connecting to the n-type electrode 290
0を形成する。 To form a 0.

【0041】次に、例えば絶縁性接着材を用いて前記筐体200の穴部220にLEDチップ230を接着する。 Next, for example, bonding the LED chip 230 into the hole 220 of the housing 200 using an insulating adhesive material. その後、チップ230のp型GaNコンタクト層に形成されたp型電極280と第1電極240の間に例えば直径約20μmの導電性ワイヤを取り付け、チップのn型GaNコンタクト層に形成されたn型電極290と筐体の第2電極250の間に例えば直径約20μmの導電性ワイヤを取り付ける。 Then, for example, attaching a conductive wire having a diameter of about 20μm between the p-type electrode 280 formed on p-type GaN contact layer of the chip 230 first electrode 240, n-type formed in n-type GaN contact layer of the chip attaching a conductive wire, for example a diameter of about 20μm between the electrode 290 and the second electrode 250 of the housing.

【0042】尚、前記ワイヤの材料としては、Au、A [0042] Incidentally, as the material of the wire, Au, A
l、Cuなどの金属又は合金を使用している。 l, using a metal or alloy such as Cu.

【0043】続いて、例えば透光性エポキシ樹脂などからなる粘性の低い樹脂モールドにイットリウム・アルミニウム・ガーネット(YAG)系蛍光体を混入したものを、前記筐体200の凹部210に注ぐ。 [0043] Then, for example, a low resin molding viscosity made of a light-transmitting epoxy resin obtained by mixing the yttrium aluminum garnet (YAG) phosphor, poured into the recess 210 of the housing 200. 続いて室温を維持しながら放置し、前記蛍光体260を完全に前記筐体200凹部210底面に沈降させる。 Followed by left while maintaining the room temperature, to precipitate the phosphor 260 to complete the housing 200 recess 210 bottom.

【0044】最後に、前記透光性エポキシ樹脂を乾燥することにより固める。 [0044] Finally, solidify by drying the translucent epoxy resin.

【0045】このようにして製造したLED発光装置のLEDチップ230を発光させると、前記LEDチップ230からの光が前記凹部210底面に形成された蛍光体260により黄色光に波長変換され、蛍光体260を透過した青色光と混色して白色発光を得ることができた。 [0045] When light emission of the LED chips 230 of the LED light emitting device produced in this manner, is wavelength-converted into yellow light by the phosphor 260 the light is formed in the recess 210 bottom surface from the LED chip 230, a phosphor it was possible to obtain white light by blue light and mixed passing through the 260.

【0046】以上説明したように、本実施例のLED発光装置は、筐体凹部210底面とLEDチップ230上面が同一平面上となるように、LEDチップを筐体20 [0046] As described above, LED light-emitting device of the present embodiment, as in the housing recess 210 bottom surface and the LED chip 230 upper surface is coplanar, the LED chip housing 20
0に設けられた穴部220に埋め込んでいる。 It is embedded in the hole 220 provided in the 0. この為、 For this reason,
前記筐体凹部210底面と前記LEDチップ230上面に同一厚さの蛍光体260を形成することができる。 It is possible to form the phosphor 260 of the same thickness to the LED chip 230 upper surface and the housing recess 210 bottom.

【0047】又、前記LEDチップ230上面の蛍光体260はチップ上面内においても厚さを均一にすることができる。 [0047] Further, the LED chip 230 the upper surface of the phosphor 260 can be made uniform even thickness in the upper surface of the chip.

【0048】その結果、従来技術の問題点である、チップ上面内で蛍光体の配された場所により発光色が異なるという問題を回避できる。 [0048] As a result, a problem of the prior art, can be avoided emission color is a problem that varies by distribution location of the phosphor in the chip upper surface.

【0049】又、前記LEDチップ230の活性層から発光された光は前記LEDチップ230上面周辺にのみに照射される為、前記LEDチップ230の活性層から前記蛍光体260への光路長は光束の全てにおいてほとんど同一である。 [0049] Further, the since the light emitted from the active layer of the LED chip 230 is irradiated only to the peripheral the LED chip 230 top, the optical path length from the active layer to the phosphor 260 of the LED chip 230 is the light beam it is almost identical in all.

【0050】その結果、従来技術の問題点である、チップの側面方向において蛍光体の配された場所により発光色相が異なるという問題も回避できる。 [0050] As a result, a problem of the prior art, can be avoided phosphor distribution location by a problem that light emission color is different in the lateral of the chip.

【0051】更に、本実施例の半導体発光装置の形成方法を用いることにより、簡単に筐体凹部210底面と前記LEDチップ230上面に同一厚さの蛍光体260を形成することができる。 [0051] Furthermore, it can be formed by using a method of forming a semiconductor light-emitting device of the present embodiment, a simple housing recess 210 bottom surface and the LED chip 230 phosphor 260 having the same thickness on the top surface.

【0052】尚、本実施例では、活性層が量子井戸構造の青色発光LEDチップを用いたが、LEDチップの構造はこの限りではない。 [0052] In the present embodiment, although the active layer is a blue emitting LED chip of the quantum well structure, the structure of the LED chips is not limited to this.

【0053】又、本実施例では、LEDチップ230の基板として絶縁性を有するサファイア基板を用いたが、 [0053] In the present embodiment uses a sapphire substrate having an insulating property as a substrate of the LED chip 230,
前記基板に導電性の基板を用いることにより、前記LE The use of a conductive substrate on the substrate, the LE
Dチップ230のp型電極280と前記導電性基板を、 The conductive substrate and the p-type electrode 280 of D chips 230,
夫々筐体200に取り付けられた第1電極240と第2 A first electrode 240 which is attached to each housing 200 second
電極250に電気的に接続する構造にしても良い。 The electrode 250 may be structured to electrically connect.

【0054】 [0054]

【発明の効果】本発明の半導体発光装置は、蛍光体を介して発光された光の発光特性を発光に寄与する蛍光体の全ての領域で同一とすることが可能である。 The semiconductor light-emitting device of the present invention exhibits, may be the same in all areas contributing phosphor emission characteristics of the emitted light in the light emission through the phosphor.

【0055】又、本発明の半導体発光装置の製造方法は、簡単な方法で、蛍光体を介して発光された光の発光特性を発光に寄与する蛍光体の全ての領域で同一とする半導体発光装置を製造することが可能である。 [0055] In the method of manufacturing the semiconductor light-emitting device of the present invention, in a simple manner, a semiconductor light emitting be identical in all areas contributing phosphor emission characteristics of the emitted light in the light emission through the phosphor it is possible to manufacture the device.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 本発明を適用してなる実施例装置の断面図である。 1 is a cross-sectional view of which the present invention is applied embodiment apparatus.

【図2】 従来の半導体発光装置の断面図である。 2 is a cross-sectional view of a conventional semiconductor light-emitting device.

【符号の説明】 DESCRIPTION OF SYMBOLS

100 筐体 110 凹部 120 LEDチップ 130 蛍光体 140 樹脂 150 外部電極 200 筐体 210 凹部 220 穴部 230 LEDチップ 240 第1電極 250 第2電極 260 蛍光体 270 樹脂 280 p型電極 290 n型電極 100 housing 110 recess 120 LED chip 130 phosphor 140 resin 150 external electrode 200 housing 210 recess 220 hole 230 LED chip 240 first electrode 250 second electrode 260 phosphor 270 resin 280 p-type electrode 290 n-type electrode

Claims (2)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 LEDチップと、上面に略凹状の凹部を有する筐体と、前記凹部に配され前記LEDチップからの光を吸収し波長変換して発光する蛍光体とを有し、 前記凹部底面には穴部が形成されており、前記LEDチップ上面と前記筐体凹部底面は略同一平面上となるように、前記穴部に前記LEDチップを配置したことを特徴とする半導体発光装置。 Has a 1. A LED chip, a housing having a substantially concave recess on the upper surface, and a phosphor that emits light by wavelength conversion by absorbing light from the LED chip disposed in the recess, the recess the bottom has a hole portion, the housing recess bottom and the LED chip top surface so as to be substantially the same plane, the semiconductor light emitting device being characterized in that arranging the LED chip to the hole.
  2. 【請求項2】 LEDチップと、上面に前記LEDチップを配置する為の穴部が形成された略凹状の凹部を有した筐体と、前記LEDチップから送出された光を吸収し波長変換する蛍光体と、を有する半導体発光装置の形成方法であって、 前記筐体の穴部に前記LEDチップを嵌め込む第1の工程と、蛍光体を含有した粘性の低い樹脂モールドを前記筐体の凹部に流し込む第2の工程と、前記樹脂モールド中に含まれた蛍光体を前記LEDチップ上面と前記筐体凹部底面に沈降させる第3の工程と、を有することを特徴とする半導体発光装置の製造方法。 2. A LED chip, a housing having a substantially concave recess hole for placing the LED chip is formed on the upper surface, to absorb the wavelength converting light sent from the LED chip a method of forming a semiconductor light emitting device including a phosphor, wherein the a first step of the bore of the housing fitting the LED chip, the lower resin mold viscous containing phosphor the housing a second step of pouring into the recess, the semiconductor light emitting device characterized by having a third step of precipitating the phosphor contained in the resin mold to the housing bottom surface of the recess and the LED chip top surface Production method.
JP2000017475A 2000-01-26 2000-01-26 Semiconductor light emitting device and manufacturing method thereof Pending JP2001210872A (en)

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