KR20120116814A - Light emitting device and method for fabricating the same - Google Patents

Abstract

PURPOSE: A light emitting device and a manufacturing method thereof are provided to prevent the denaturalization of wavelength conversion particles in a light emitting part or a wavelength converter by removing a gap between an inner side of a cavity and the wavelength converter. CONSTITUTION: A body part(100) with a cavity(C) is formed. An inner surface of the cavity is surface-treated to a first characteristic. The inside of the cavity is filled with a resin composition having the first characteristic. The resin composition filled inside the cavity is hardened. A light emitting diode(300) is arranged in the cavity. A wavelength converter covers the light emitting part and is arranged in the cavity. [Reference numerals] (AA) Plasma

Description

LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME}

The embodiment relates to a light emitting device and a method of manufacturing the same.

Light emitting diodes (LEDs) may form light emitting sources using compound semiconductor materials such as GaAs series, AlGaAs series, GaN series, InGaN series, and InGaAlP series.

Such a light emitting diode is packaged and used as a light emitting device that emits various colors, and the light emitting device is used as a light source in various fields such as a lighting indicator for displaying colors, a character display, and an image display.

The embodiment provides a light emitting device having an improved luminance and a method of manufacturing the same.

The method of manufacturing a light emitting device according to the embodiment forms a body portion in which the cavity is formed, surface-treats the inner surface of the cavity with a first characteristic, and fills a resin composition having the first characteristic in the cavity, Curing the resin composition filled in the cavity.

The light emitting device according to the embodiment includes a body portion in which the cavity is formed; A light emitting part disposed in the cavity; And a wavelength converting portion covering the light emitting portion and disposed in the cavity, wherein the first surface of the body portion has a first characteristic, and the second surface of the body portion has a second characteristic.

The method of manufacturing a light emitting device according to the embodiment includes surface treating the inner surface of the cavity with a first characteristic, and filling the cavity with a resin composition having the first characteristic.

Accordingly, the resin composition can be easily and effectively filled in the cavity. Thereafter, the resin composition may be cured and a wavelength converter may be formed.

Therefore, in the method of manufacturing the light emitting device according to the embodiment, the wavelength conversion part may be brought into close contact with the inner surface of the cavity as a whole. That is, a gap such as an air layer may be removed between the inner surface of the cavity and the wavelength converter.

Accordingly, penetration of oxygen and the like between the body portion and the wavelength conversion portion can be prevented, and denaturation of wavelength conversion particles in the light emitting portion or the wavelength conversion portion can be prevented.

Therefore, the manufacturing method of the light emitting device according to the embodiment can provide a light emitting device of improved durability.

In addition, the manufacturing method of the light emitting device according to the embodiment can effectively control the surface shape of the wavelength conversion portion.

That is, since both the resin composition and the inner side surfaces of the cavity have the first characteristics, when the resin composition is partially filled in the cavity, the outer surface of the wavelength conversion portion may be concave.

Alternatively, when the resin composition is filled in the correct amount inside the cavity, the outer surface of the wavelength conversion portion may be flat.

Alternatively, when the resin composition is excessively filled in the cavity, the outer surface of the wavelength converter may be formed convexly.

Accordingly, the manufacturing method of the light emitting device according to the embodiment can provide a light emitting device having improved durability and performance.

1 to 5 are views illustrating a process of manufacturing a light emitting diode package according to an embodiment.
6 is a perspective view illustrating a light emitting diode package according to an embodiment.
FIG. 7 is a cross-sectional view taken along the line AA ′ of FIG. 6.

In the description of the embodiments, where each substrate, layer, film, or electrode is described as being formed "on" or "under" of each substrate, layer, film, or electrode, etc. , "On" and "under" include both "directly" or "indirectly" formed through other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 to 5 are views illustrating a process of manufacturing a light emitting diode package according to an embodiment. 6 is a perspective view illustrating a light emitting diode package according to an embodiment. FIG. 7 is a cross-sectional view illustrating a cross section taken along line AA ′ in FIG. 6.

Referring to FIG. 1, a plurality of body parts 100 and a plurality of lead electrodes 210 and 220 are formed. The body parts 100 may be formed by a dual injection process. The body parts 100 may be connected to each other and supported with each other. That is, the body parts 100 may be connected to each other to implement a plate shape as a whole. That is, the body parts 100 may be formed in an array substrate shape.

The body parts 100 may be formed of any one of a resin material such as epoxy or polyphthalamide (PPA), ceramic material, liquid crystal polymer (LCP), syndiotactic (SPS), poly (phenylene ether) (PSP), and silicon material. Can be formed. However, the material of the body parts 100 is not limited.

Each body portion 100 includes a cavity C with an open top. The cavity C may be formed with respect to the body portion 100 by patterning, punching, cutting or etching. In addition, the cavity (C) may be formed by a metal mold modeled after the shape of the cavity (C) during the molding of the body portion (100).

The shape of the cavity C may be formed in a cup shape, a concave container shape, or the like, and the surface thereof may be formed in a circular shape, a polygonal shape, or a random shape, but is not limited thereto.

The inner surface 122 of the cavity C may be formed as a surface perpendicular or inclined with respect to the bottom surface 123 of the cavity C in consideration of the light distribution angle of the light emitting diode package according to the embodiment.

The body portion 100 includes a base portion 110 and the receiving portion 120.

The base part 110 supports the receiving part 120. In addition, the base unit 110 supports the lead electrodes 210 and 220. The base portion 110 may have, for example, a rectangular parallelepiped shape.

The receiving part 120 is disposed on the base part 110. By the receiving part 120, the cavity C is defined. That is, the cavity C is a groove formed in the accommodating part 120. The accommodating part 120 surrounds the circumference of the cavity C. The receiving part 120 may have a closed loop shape when viewed from the top side. For example, the accommodation part 120 may have a wall shape surrounding the cavity C.

The receiving part 120 includes an upper surface 121, an outer side surface, and an inner side surface 122. The inner side surface 122 is an inclined surface that is inclined with respect to the upper surface 121.

A reflective layer may be formed on the inner surface 122 of the cavity C. That is, a material having a high reflection effect, for example, white PSR (Photo Solder Resist) ink, silver (Ag), aluminum (Al), or the like may be coated or applied to the inner surface 122 of the receiving portion 120. Accordingly, the luminous efficiency of the LED package according to the embodiment can be improved.

The lead electrodes 210 and 220 may be integrally formed with the body parts 100. In more detail, two lead electrodes may be provided in one body part. The lead electrodes 210 and 220 may be implemented as a lead frame, but is not limited thereto.

The lead electrodes 210 and 220 may be disposed in the body part 100, and the lead electrodes 210 and 220 may be disposed to be electrically spaced apart from the bottom surface 123 of the cavity C. . Outer portions of the lead electrodes 210 and 220 may be exposed to the outside of the body 100. In more detail, the lead electrodes 210 and 220 are provided in the base part 110.

Ends of the lead electrodes 210 and 220 may be disposed on one side of the cavity C or on the opposite side of the cavity C.

The lead electrodes 210 and 220 may be formed of a lead frame, and the lead frame may be formed during injection molding of the body part 100. The lead electrodes 210 and 220 may be, for example, a first lead electrode 210 and a second lead electrode 220.

The first lead electrode 210 and the second lead electrode 220 are spaced apart from each other. The first lead electrode 210 and the second lead electrode 220 are electrically connected to the light emitting chip 300.

The light emitting chip 300 is disposed inside the cavity C. The light emitting chip 300 is a light emitting unit for generating light. The light emitting chip 300 is a light emitting diode chip that generates light. For example, the light emitting chip 300 may include a colored LED chip or a UV LED chip. One light emitting chip 300 may be disposed in one cavity C, respectively.

The light emitting chip 300 may be a vertical light emitting diode chip. The light emitting chip 300 may include a conductive substrate, a reflective layer, a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer, and a second electrode.

The conductive substrate is made of a conductor. The conductive substrate supports the reflective layer, the first conductive semiconductor layer, the second conductive semiconductor layer, the active layer, and the second electrode.

The conductive substrate is connected to the first conductive semiconductor layer through the reflective layer. That is, the conductive substrate is a first electrode for applying an electrical signal to the first conductive semiconductor layer.

The reflective layer is disposed on the conductive substrate. The reflective layer reflects light emitted from the active layer upwards. The reflective layer is a conductive layer. Thus, the reflective layer connects the conductive substrate to the first conductive semiconductor layer. Examples of the material used as the reflective layer include metals such as silver or aluminum.

The first conductivity type semiconductor layer is disposed on the reflective layer. The first conductivity type semiconductor layer has a first conductivity type. The first conductivity type semiconductor layer may be an n-type semiconductor layer. For example, the first conductivity type semiconductor layer may be an n-type GaN layer.

The second conductivity type semiconductor layer is disposed on the first conductivity type semiconductor layer. The second conductive semiconductor layer may face the first conductive semiconductor layer and may be a p-type semiconductor layer. The second conductivity type semiconductor layer may be, for example, a p-type GaN layer.

The active layer is interposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The active layer has a single quantum well structure or a multi quantum well structure. The active layer may be formed by a period of an InGaN well layer and an AlGaN barrier layer or a period of an InGaN well layer and a GaN barrier layer, and the light emitting material of the active layer may vary depending on an emission wavelength, for example, a blue wavelength, a red wavelength, a green wavelength, or the like. .

The second electrode is disposed on the second conductive semiconductor layer. The second electrode is connected to the second conductive semiconductor layer.

Alternatively, the light emitting chip 300 may be a horizontal LED. At this time, in order to connect the horizontal LED to the first lead electrode 210, additional wiring may be necessary.

The light emitting chip 300 may be connected to the first lead electrode 210 by a bump or the like, and may be connected to the second lead electrode 220 by a wire. In particular, the light emitting chip 300 may be directly disposed on the first lead electrode 210.

In addition, the light emitting chip 300 may be connected to the lead electrodes 210 and 220 by a wire bonding, die bonding, or flip bonding method, without being limited thereto. .

2 and 3, a mask layer 10 is formed on the top surface 121 of the body portion 100. The mask layer 10 is a mask that exposes a part of the body part 100. In more detail, the mask layer 10 is formed on the upper surface 121 of the receiving portion 120. The mask layer 10 may be formed to expose the inner surfaces 122 and 123 of the cavity C.

The mask layer 10 surrounds the cavity C. The mask layer 10 may have a closed loop shape when viewed from the top side. The mask layer 10 covers the entire upper surface 121 of the accommodating part 120.

The mask layer 10 may be disposed only on the upper surface 121 of the accommodating part 120. Alternatively, a hard mask including a hole exposing only the cavity C may be disposed on the body parts 100. Accordingly, the hard mask may cover all regions other than the cavity C.

As an example of the material used for the said mask layer 10, acrylic resin etc. are mentioned. Sticky resin may be used as the mask layer 10. Accordingly, the mask layer 10 may be easily detached from the accommodating part 120.

In order to form the mask layer 10, a resin composition may be applied only to the upper surface 121 of the accommodating part 120. Thereafter, the mask layer 10 is cured by ultraviolet rays, and a mask layer 10 is formed on the top surface 121 of the accommodating part 120.

Referring to FIG. 4, the inner surfaces 122 and 123 of the cavity C are selectively surface treated. In more detail, the inner surfaces 122 and 123 of the cavity C may be surface treated to have hydrophilicity. In this case, the body portion 100 may be formed of a material having hydrophobicity. Accordingly, the inner surfaces 122 and 123 of the cavity C may have hydrophilicity, and the upper surface 121 of the accommodation part 120 may have hydrophobicity.

For example, oxygen plasma is injected into the inner surfaces 122 and 123 of the cavity C, and thus the inner surfaces 122 and 123 of the cavity C may be hydrophilized. In addition, the inner surfaces 122 and 123 of the cavity C may be hydrophilized by a wet method.

Alternatively, the inner surfaces 122 and 123 of the cavity C may be surface treated to have hydrophobicity. At this time, the body portion 100 may be formed of a material having a hydrophilicity. Accordingly, the inner surfaces 122 and 123 of the cavity C may have hydrophobicity, and the upper surface 121 of the accommodation part 120 may have hydrophilicity.

For example, florin-based plasma may be sprayed on the inner surfaces 122 and 123 of the cavity C, and the inner surfaces 122 and 123 of the cavity C may be hydrophobicized. In addition, the inner surfaces 122 and 123 of the cavity C may be hydrophobized by a wet method.

In the present embodiment, after the light emitting chip 300 is disposed in the cavity C, the inner surfaces 122 and 123 of the cavity C are surface treated, but the order thereof is not limited. That is, after the inner surfaces 122 and 123 of the cavity C are surface treated, the light emitting chip 300 may be provided in the cavity C.

Referring to FIG. 5, after the surface treatment process is completed, the mask layer 10 is removed. The mask layer 10 may be removed by desorption.

Accordingly, the first surface of the body portion 100, that is, the inner surfaces 122 and 123 of the cavity C and the second surface of the body portion 100, that is, the upper surface of the receiving portion 120. 121 may have different surface properties.

Thereafter, the wavelength converter 400 is formed inside the cavity C. The wavelength converter 400 may be formed by the following process.

The resin composition in which the plurality of wavelength conversion particles 411 and 421 are uniformly dispersed is filled in the cavity C by an inkjet method or the like. Thereafter, the resin composition filled in the cavity C may be cured by ultraviolet rays or the like, and the wavelength converter 400 may be formed.

More specifically, the resin composition may have hydrophilicity. In this case, the body portion 100 may have hydrophobicity, and inner surfaces 122 and 123 of the cavity C may be hydrophilized. In addition, the resin composition may have hydrophobicity. In this case, the body portion 100 has hydrophilicity, and the inner surfaces 122 and 123 of the cavity C may be hydrophobicly treated.

Accordingly, the resin composition in the cavity (C) may be in close contact with the bottom surface 123 and the inner surface of the cavity (C). In more detail, there is no air layer between the resin composition in the cavity C and the inner surfaces 122 and 123 of the cavity C.

Thereafter, the resin composition is cured to form the wavelength converter 400. Accordingly, the wavelength converter 400 may be completely in contact with the inner surfaces 122 and 123 of the cavity C.

In addition, the light emitting chip 300 and the lead electrodes 210 and 220 may also be surface treated to have the same characteristics as the resin composition. Accordingly, the wavelength converter 400 may be in close contact with the light emitting chip 300 and the lead electrodes 210 and 220.

In addition, the upper surface 121 of the receiving portion 120 may have a surface characteristic different from the resin composition. For example, when the resin composition has hydrophilicity, the upper surface 121 of the accommodating part 120 may have hydrophobicity. Unlike this, when the resin composition has hydrophobicity, the upper surface 121 of the accommodating part 120 may have hydrophilicity.

Therefore, the said resin composition does not overflow to the outside by the upper surface 121 of the said accommodating part 120. FIG. In particular, even if the resin composition is doped more than the volume of the cavity (C) to some extent, the resin composition can maintain a convex shape without overflowing from the cavity (C).

Accordingly, the resin composition may be filled in the cavity C by a desired amount, and the wavelength converter 400 may be formed into a desired shape by curing the resin composition.

That is, when the outer surface of the wavelength converter 400 is to be concave, the resin composition may be filled in a smaller amount than the volume of the cavity C inside the cavity C. In addition, when the outer surface of the wavelength converter 400 is to be convex, a larger amount of the resin composition may be filled in the cavity C than the volume of the cavity C. In addition, when the outer surface of the wavelength converter 400 is to be formed flat, the resin composition may be substantially filled with the volume of the cavity C inside the cavity C.

As such, since the upper surface 121 of the accommodating part 120 and the inner surfaces 122 and 123 of the cavity C have different surface properties, the resin composition may be easily filled in the cavity C. have. In addition, the wavelength converter 400 may be in close contact with the inner surfaces 122 and 123 of the cavity C, and may have a desired outer surface shape.

The wavelength converter 400 converts the wavelength of the light emitted from the light emitting chip 300. In more detail, the wavelength converter 400 may include a plurality of wavelength conversion particles 411 and 421 for converting the wavelength of incident light.

The wavelength converting particles 411 and 421 convert the wavelength of incident light. In more detail, the wavelength conversion particles 411 and 421 may convert the wavelength of light emitted from the light emitting chip 300. The wavelength converting particles 411 and 421 may be quantum dots or phosphors.

The quantum dot may include a core nanocrystal and a shell nanocrystal surrounding the core nanocrystal. In addition, the quantum dot may include an organic ligand bound to the shell nanocrystal. In addition, the quantum dot may include an organic coating layer surrounding the shell nanocrystals.

The shell nanocrystals may be formed of two or more layers. The shell nanocrystals are formed on the surface of the core nanocrystals. The quantum dot may convert the wavelength of the light incident on the core core crystal into a long wavelength through the shell nanocrystals forming the shell layer and increase the light efficiency.

The quantum dot may include at least one of a group II compound semiconductor, a group III compound semiconductor, a group V compound semiconductor, and a group VI compound semiconductor. More specifically, the core nanocrystals may include Cdse, InGaP, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. In addition, the shell nanocrystals may include CuZnS, CdSe, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. The diameter of the quantum dot may be 1 nm to 10 nm.

The wavelength of light emitted from the quantum dots can be controlled by the size of the quantum dots or the molar ratio of the molecular cluster compound and the nanoparticle precursor in the synthesis process. The organic ligand may include pyridine, mercapto alcohol, thiol, phosphine, phosphine oxide, and the like. The organic ligands serve to stabilize unstable quantum dots after synthesis. After synthesis, a dangling bond is formed on the outer periphery, and the quantum dots may become unstable due to the dangling bonds. However, one end of the organic ligand is in an unbonded state, and one end of the unbound organic ligand bonds with the dangling bond, thereby stabilizing the quantum dot.

Particularly, when the quantum dot has a size smaller than the Bohr radius of an exciton formed by electrons and holes excited by light, electricity or the like, a quantum confinement effect is generated to have a staggering energy level and an energy gap The size of the image is changed. Further, the charge is confined within the quantum dots, so that it has a high luminous efficiency.

Unlike general fluorescent dyes, the quantum dots vary in fluorescence wavelength depending on the particle size. That is, as the size of the particle becomes smaller, it emits light having a shorter wavelength, and the particle size can be adjusted to produce fluorescence in a visible light region of a desired wavelength. In addition, since the extinction coefficient is 100 to 1000 times higher than that of a general dye, and the quantum yield is also high, it produces very high fluorescence.

The quantum dot can be synthesized by a chemical wet process. Here, the chemical wet method is a method of growing particles by adding a precursor material to an organic solvent, and the quantum dots can be synthesized by a chemical wet method.

The phosphor may be a yellow phosphor, a red phosphor or a green phosphor. The phosphor may be a YAG phosphor, a TAG phosphor, a cyon phosphor, or a BOS phosphor.

The wavelength converter 400 may include a first wavelength converter 410 and a second wavelength converter 420.

The first wavelength converter 410 is disposed on the bottom surface 123 of the cavity C. The first wavelength converter 410 converts light emitted from the light emitting chip 300 into light having a first wavelength. For example, when blue light is emitted from the light emitting chip 300, the first wavelength converter 410 may convert the blue light into green light.

The first wavelength converter 410 includes a plurality of first wavelength conversion particles 411 and a first host layer 412.

The first wavelength converting particles 411 are uniformly dispersed in the first host layer 412. The first wavelength converting particles 411 convert light emitted from the light emitting chip 300 into light of the first wavelength. In more detail, the first wavelength conversion particles 411 may convert blue light emitted from the light emitting chip 300 into green light.

The first host layer 412 is in close contact with the inner surface 122 and the bottom surface 123 of the cavity C. Examples of the material used for the first host layer 412 include silicone resins.

The second wavelength converter 420 is disposed on the first wavelength converter 410. The second wavelength converter 420 may be in close contact with an inner surface 122 of the cavity C and an upper surface of the first wavelength converter 410.

The second wavelength converter 420 converts light emitted from the light emitting chip 300 into light having a second wavelength. For example, when blue light is emitted from the light emitting chip 300, the second wavelength converter 420 may convert the blue light into red light.

The second wavelength converter 420 includes a plurality of second wavelength conversion particles 421 and a second host layer 422.

The second wavelength converting particles 421 are uniformly dispersed in the second host layer 422. The second wavelength conversion particles 421 convert the light emitted from the light emitting chip 300 into the light of the second wavelength. In more detail, the second wavelength conversion particles 421 may convert blue light emitted from the light emitting chip 300 into red light.

The second host layer 422 is in close contact with the inner surface 122 of the cavity C and the upper surface 121 of the first wavelength converter 410. Examples of the material used for the second host layer 422 include silicone resins. That is, the first host layer 412 and the second host layer 422 may be formed of the same material.

Accordingly, a plurality of light emitting diode packages are formed.

6 and 7, the light emitting diode packages formed as above are separated from each other. Each LED package includes the body portion 100, the lead electrodes 210 and 220, the LED chip 300, and the wavelength converter 400.

As described above, the body portion 100 includes a first surface and a second surface having different surface characteristics. That is, the inner surface 122 and the bottom surface 123 of the cavity C may have a first surface property, and the upper surface 121 of the body part 100 may have a second surface property.

In addition, the upper surface 121 of the wavelength converter 400 and the upper surface 121 of the receiving portion 120 may have different surface characteristics.

That is, in the light emitting diode package formed by the manufacturing method of this embodiment, part of the body portion 100 may be hydrophilic, and the other part may have hydrophobicity. That is, when one surface of the body portion 100 of the light emitting diode package has hydrophilicity and the other surface has hydrophobicity, it can be inferred that such a light emitting diode package is formed by the manufacturing method according to the present embodiment.

In addition, in the case of the light emitting diode package formed by the manufacturing method of the present embodiment, a part of the mask layer 10 may remain on the upper surface 121 of the body portion 100.

As described above, the light emitting diode package manufacturing method according to the embodiment surface-treated the inner surface 122 of the cavity (C) with a first characteristic, the resin composition having the first characteristic in the cavity (C) Filling within.

Accordingly, the resin composition can be easily and effectively filled in the cavity (C). Thereafter, the resin composition may be cured, and the wavelength converter 400 may be formed.

Therefore, in the method of manufacturing the LED package according to the embodiment, the wavelength converter 400 may be brought into close contact with the inner surface 122 of the cavity C as a whole. That is, a gap such as an air layer may be removed between the inner surface 122 of the cavity C and the wavelength converter 400.

Accordingly, penetration of oxygen or the like is prevented between the body part 100 and the wavelength converter 400, and denaturation of the light emitting chip 300 or the wavelength conversion particles 411 and 421 may be prevented. have.

Thus, the LED package according to the embodiment can have improved durability.

In addition, as described above, the method of manufacturing the light emitting device according to the embodiment may effectively control the surface shape of the wavelength converter 400.

That is, since both of the resin composition and the inner surface 122 of the cavity (C) have the first characteristics, when the resin composition is partially filled in the cavity (C), the wavelength conversion portion 400 of the The outer surface may be concave.

Unlike the above, when the resin composition is filled in the cavity C in the correct amount, the outer surface of the wavelength converter 400 may be flat.

Unlike this, when the resin composition is excessively filled in the cavity C, the outer surface of the wavelength converter 400 may be convex.

Accordingly, the method of manufacturing a light emitting diode package according to the embodiment can provide a light emitting diode package having improved durability and performance.

In addition, the light emitting diode package according to the present embodiment is a light emitting device that generates light widely.

In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (12)

Forms a body portion from which the cavity is formed,
Surface treatment of the inner surface of the cavity with a first characteristic,
Filling the inside of the cavity with a resin composition having the first characteristic,
Method of manufacturing a light emitting device comprising curing the resin composition filled in the cavity. The method of claim 1, wherein the first property is hydrophilic or hydrophobic. The method of claim 1,
Injecting a plasma to the inner surface of the cavity manufacturing method of the light emitting device. The method of claim 3, wherein the plasma comprises at least one of a florin-based gas and an ozone gas. The method of claim 1,
Forming a mask exposing an inner surface of the cavity on a portion of the body portion,
A method of manufacturing a light emitting device comprising injecting a plasma to the inner surface of the cavity through the mask. The method of claim 1, wherein after the surface of the inner surface of the cavity surface treatment, the light emitting portion is disposed in the cavity,
The said resin composition is a manufacturing method of the light emitting element which covers the said light emitting part. The method of claim 1, wherein the light emitting portion is disposed in the cavity,
The surface of the light emitting portion is a method of manufacturing a light emitting device is surface-treated with the first characteristic. A body portion in which a cavity is formed;
A light emitting part disposed in the cavity; And
A wavelength conversion part covering the light emitting part and disposed in the cavity;
The first surface of the body portion has a first characteristic,
The second surface of the body portion has a second characteristic. The light emitting device of claim 8, wherein the first surface is part or all of an inner surface of the cavity. The light emitting device of claim 8, wherein the second surface surrounds the circumference of the first surface. The method of claim 8, wherein the wavelength converter
A first wavelength converting part covering the light emitting part; And
A light emitting device comprising a second wavelength converter covering the first wavelength converter. The method of claim 11,
The first wavelength converter includes a plurality of first light conversion particles for converting light emitted from the light emitting part into light of a first wavelength,
The second wavelength conversion unit includes a plurality of second light conversion particles for converting the light emitted from the light emitting unit to the light of the second wavelength.

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