KR101916282B1

KR101916282B1 - Light emitting device

Info

Publication number: KR101916282B1
Application number: KR1020110116053A
Authority: KR
Inventors: 이유원; 오정택
Original assignee: 엘지이노텍 주식회사
Priority date: 2011-11-08
Filing date: 2011-11-08
Publication date: 2018-11-09
Also published as: KR20130050804A

Abstract

A light emitting device is disclosed. The light emitting device includes a body portion having a cavity formed therein; A light emitting portion disposed in the cavity; A reflective layer disposed on an inner surface of the cavity; And a light conversion layer disposed adjacent to the reflective layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

Recently, gallium nitride (GaN) -based white light emitting diodes (LEDs) have been actively being developed all over the world by a method of obtaining a white color by bonding a fluorescent material onto a blue or UV LED chip by a single- There are two ways to obtain white light by combining two or three LED chips in a form.

A typical method of implementing a white light emitting diode in a multi-chip form is to fabricate a combination of three RGB chips, in which the output of each chip changes according to the non-uniformity of the operating voltage and the ambient temperature, .

Due to the above-described problems, the multi-chip type is suitable for a special lighting purpose requiring various colors to be produced by adjusting the brightness of each LED through a circuit configuration, rather than the implementation of a white LED.

Therefore, a binary system in which a blue light emitting LED, which is relatively easy to manufacture and has high efficiency, and a phosphor that emits yellow light by being excited by the blue light emitting LED are combined as a method of realizing a white light emitting diode is typically used .

In a binary system, a blue LED is used as an excitation light source, and a Yttrium Aluminum Garnet (YAG: Yttrium Aluminum Garnet) phosphor, that is, a YAG: Ce phosphor that uses Ce3 + as a rare earth tri- A white light emitting diode which excites by light has been mainly used.

In addition, white light emitting diodes are being used in various types of packages depending on their application fields. Typical examples of the white light emitting diodes include an ultra-small light emitting diode device in the form of a surface mounting device (SMD) applied to the backlighting of a mobile phone, And a vertical display type for solid-state display elements and image display.

On the other hand, there are correlated color temperature (CCT) and color rendering index (CRI) as indicators used for analyzing the characteristics of white light.

Correlated color temperature (CCT) refers to the temperature when the object is visible with visible light and the color is the same as the color of the black body at a certain temperature. The higher the color temperature, the brighter the snow, the more blue the white.

That is, even if the same white light is used, the color temperature becomes warmer when the color temperature is lower, and the color temperature becomes colder when the color temperature is higher. Therefore, by adjusting the color temperature, it is possible to satisfy special lighting characteristics requiring various colors.

In the case of a white light emitting diode using a conventional YAG: Ce phosphor, the color temperature was only 6000 to 8000K. The color rendering index (CRI) indicates the degree to which the color of an object changes when sunlight is irradiated to an object or other artificially created illumination. When the color of the object is the same as that of sunlight, the CRI value is 100 . That is, the color rendering index (CRI) is an index indicating how close the color of an object is when it is illuminated with sunlight under artificial lighting, and has a value from 0 to 100.

In other words, a white light source with a CRI approaching 100 would feel a color that is not much different from the color of objects that the human eye recognizes under sunlight.

CRI of current incandescent bulbs is more than 80 and fluorescent lamps are more than 75. CRI of commercialized white LEDs is about 70 ~ 75.

Therefore, the white LED using the conventional YAG: Ce phosphor has a problem that the color temperature and the color rendering index are somewhat low.

Further, since only the YAG: Ce phosphor is used, it is difficult to control the color coordinates, the color temperature, and the color rendering index.

As described above, Korean Patent Laid-open Publication No. 10-2005-0098462 and the like are disclosed in connection with light emitting diodes using phosphors.

The embodiment is intended to provide a light emitting element which can be easily manufactured with an improved color reproduction ratio.

The light emitting device according to one embodiment includes a body portion having a cavity formed therein; A light emitting portion disposed in the cavity; A reflective layer disposed on an inner surface of the cavity; And a light conversion layer disposed adjacent to the reflective layer.

The light emitting device according to one embodiment includes a body portion having a cavity formed therein; A light emitting portion disposed on a bottom surface of the cavity; A light conversion layer spaced apart from the light emitting portion and disposed between the inner surface of the cavity and the light emitting portion; And a reflective layer disposed between the light conversion layer and the inner surface of the cavity.

The light emitting device according to the embodiment arranges the light conversion layer adjacent to the reflective layer. Accordingly, the wavelength of the light emitted from the light emitting portion can be converted directly after being incident on the light conversion layer. Further, the light emitted from the light emitting portion passes through the light conversion layer, is reflected by the reflection layer, is incident again on the light absorption layer, and the wavelength of the light can be changed.

As described above, the light-emitting device according to the embodiment can effectively convert the wavelength of light from the light-emitting portion by forming the light conversion layer on the reflection layer.

Therefore, the light emitting device according to the embodiment can have an improved light conversion efficiency and can have improved color reproducibility.

In addition, the light conversion layer may not be formed entirely inside the cavity but may be formed only on a region adjacent to the reflection layer, for example, on the reflection surface of the reflection layer. Accordingly, the light emitting device according to the embodiment can reduce the use of the light conversion particles such as the quantum dot used in the light conversion layer. Therefore, the light emitting device according to the embodiment can be easily manufactured at a low cost.

Further, the light conversion layer may be formed on the inner surface of the cavity, and may be spaced apart from the light emitting portion. Accordingly, deterioration of the light conversion layer can be suppressed by the heat generated from the light emitting portion. Therefore, the light emitting device according to the embodiment can have improved reliability and durability.

1 is a perspective view illustrating a light emitting device package according to an embodiment.
FIG. 2 is a cross-sectional view showing a section cut along AA 'in FIG. 1; FIG.
3 is a cross-sectional view of a light emitting diode chip.
4 to 6 are cross-sectional views illustrating a light emitting device package according to another embodiment.

In the description of the embodiments, it is described that each substrate, frame, sheet, layer or pattern is formed "on" or "under" each substrate, frame, sheet, In this case, "on" and "under " all include being formed either directly or indirectly through another element. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is a perspective view illustrating a light emitting device package according to an embodiment. 2 is a cross-sectional view showing a section taken along the line A-A in Fig. 3 is a cross-sectional view of a light emitting diode chip. 4 to 6 are cross-sectional views illustrating a light emitting device package according to another embodiment.

1 to 6, a light emitting diode package according to an embodiment includes a body 100, a plurality of lead electrodes 210 and 220, a light emitting unit 300, a filling unit 400, a reflective layer 500, And a photo-conversion layer (600).

The body part 100 receives the light emitting part 300, the filling part 400, the reflective layer 500 and the light converting layer 600 and supports the lead electrodes 210 and 220 .

The body part 100 may be formed of any one of resin material such as PPA, ceramic material, LCP, SPS, PPS, and silicone. However, the present invention is not limited to the material of the body 100. The body 100 may be integrally formed by injection molding, or may have a structure in which a plurality of layers are stacked.

The body portion 100 includes a cavity C having an open top. The cavity C may be formed on the body 100 by patterning, punching, cutting, etching or the like. In addition, the cavity C may be formed by a metal frame shaped like a cavity C when the body 100 is formed.

The shape of the cavity C may be a cup shape, a concave container shape, or the like. The surface of the cavity C may be formed in a circular shape, a polygonal shape, or a random shape, but is not limited thereto.

The inner side surface 122 of the cavity C may be formed as a plane perpendicular or inclined with respect to the bottom surface 123 of the cavity C in consideration of the light distribution angle of the light emitting diode package.

The body portion 100 includes a base portion 110 and a receiving portion 120.

The base portion 110 supports the receiving portion 120. In addition, the base 110 supports the lead electrodes 210 and 220. The base portion 110 may have, for example, a rectangular parallelepiped shape.

The receiving portion 120 is disposed on the base portion 110. The cavity (C) is defined by the accommodating portion (120). That is, the cavity C is a groove formed in the receiving portion 120. The accommodating portion 120 surrounds the periphery of the cavity C. [ The receiving portion 120 may have a closed loop shape when viewed from the top side. For example, the receiving portion 120 may have a wall shape surrounding the cavity C.

The receiving portion 120 includes an upper surface, an outer surface, and an inner surface 122. The inner surface 122 is an inclined surface inclined with respect to the upper surface 121.

The lead electrodes 210 and 220 may be implemented as a lead frame, but the present invention is not limited thereto.

The lead electrodes 210 and 220 may be disposed in the body 100 and the lead electrodes 210 and 220 may be electrically spaced from the bottom surface of the cavity C. [ The outer sides of the lead electrodes 210 and 220 may be exposed to the outside of the body 100.

The ends of the lead electrodes 210 and 220 may be disposed on one side of the cavity C or on the opposite side of the cavity C. [

The lead electrodes 210 and 220 may be a lead frame, and the lead frame may be formed during the injection molding of the body 100. The lead electrodes 210 and 220 may be, for example, a first lead electrode and a second lead electrode 220.

The first lead electrode 210 and the second lead electrode 220 are spaced apart from each other. The first lead electrode 210 and the second lead electrode 220 are electrically connected to the light emitting unit 300.

The light emitting unit 300 includes at least one light emitting diode chip. For example, the light emitting unit 300 may include a color light emitting diode chip or a UV light emitting diode chip.

The light emitting unit 300 may be a horizontal type light emitting diode or a vertical type light emitting diode chip. 3, the light emitting unit 300 includes a conductive substrate 310, a light reflecting layer 320, a first conductive semiconductor layer 330, a second conductive semiconductor layer 340, an active layer 350 And a second electrode 360. The first electrode 360 may include a first electrode 360 and a second electrode 360. [

The conductive substrate 310 is made of a conductive material. The conductive substrate 310 is electrically connected to the light reflection layer 320, the first conductivity type semiconductor layer 330, the second conductivity type semiconductor layer 340, the active layer 350 and the second electrode 360 .

The conductive substrate 310 is connected to the first conductive type semiconductor layer 330 through the light reflection layer 320. That is, the conductive substrate 310 is a first electrode for applying an electrical signal to the first conductive type semiconductor layer 330.

The light reflection layer 320 is disposed on the conductive substrate 310. The light reflection layer 320 reflects upward the light emitted from the active layer 350. The light reflection layer 320 is a conductive layer. Accordingly, the light reflecting layer 320 connects the conductive substrate 310 to the first conductive type semiconductor layer 330. Examples of the material used for the light reflection layer 320 include metals such as silver and aluminum.

The first conductive semiconductor layer 330 is disposed on the light reflection layer 320. The first conductive semiconductor layer 330 has a first conductivity type. The first conductive semiconductor layer 330 may be an n-type semiconductor layer. For example, the first conductive semiconductor layer 330 may be an n-type GaN layer.

The second conductive semiconductor layer 340 is disposed on the first conductive semiconductor layer 330. The second conductive semiconductor layer 340 may be a p-type semiconductor layer facing the first conductive semiconductor layer 330. The second conductive semiconductor layer 340 may be, for example, a p-type GaN layer.

The active layer 350 is interposed between the first conductive semiconductor layer 330 and the second conductive semiconductor layer 340. The active layer 350 has a single quantum well structure or a multiple quantum well structure. The active layer 350 may be formed of a period of an InGaN well layer and an AlGaN barrier layer, or a period of an InGaN well layer and a GaN barrier layer. The light emitting material of the active layer 350 may have a luminescence wavelength such as a blue wavelength, Wavelength, and the like.

The second electrode 360 is disposed on the second conductive semiconductor layer 340. The second electrode 360 is connected to the second conductive semiconductor layer 340.

Alternatively, the light emitting unit 300 may be a horizontal LED. At this time, in order to connect the horizontal LED to the first lead electrode 210, additional wiring may be required.

The light emitting unit 300 may be connected to the first lead electrode 210 by a bump or the like and may be connected to the second lead electrode 220 by a wire. In particular, the light emitting unit 300 may be disposed directly on the first lead electrode 210.

The light emitting unit 300 may be connected to the lead electrodes by wire bonding, die bonding, flip bonding or the like, but the present invention is not limited thereto.

The filling part (400) is formed in the cavity (C). The filling part 400 is transparent. The filling part 400 may be made of a material such as silicon or epoxy, or a material having a refractive index of 2 or less. The filling part (400) covers the light emitting part (300). The filling part 400 may be in direct contact with the light emitting part 300.

The reflective layer 500 is disposed within the body 100. More specifically, the reflective layer 500 is disposed within the cavity C. More specifically, the reflective layer 500 may be disposed on the inner surface 122 of the cavity C. [ More specifically, the reflective layer 500 may cover the inner surface 122 of the cavity C. [ More specifically, the reflective layer 500 may be disposed directly on the inner surface 122 of the cavity C. [ The reflective layer 500 may be coated on the inner surface 122 of the cavity C. [

The reflective layer 500 may be formed entirely on the inner surface 122 of the cavity C. [ More specifically, the reflective layer 500 may be disposed entirely on the four inner sides of the cavity C. Accordingly, the reflective layer 500 may surround the light emitting portion 300, the filling portion 400, and the light conversion layer 600. The reflective layer 500 may be formed on the bottom surface of the cavity C.

The reflective layer 500 may include a material having high reflective effect, for example, white PSR (Photo Solder Resist) ink, silver (Ag), or aluminum (Al).

The light conversion layer (600) is disposed in the cavity (C). The light conversion layer 600 is disposed adjacent to the reflective layer 500. The light conversion layer 600 may be disposed directly on the reflective layer 500. More specifically, the light conversion layer 600 may be disposed on the reflective surface 510 of the reflective layer 500. The light conversion layer 600 may cover the reflective layer 500. The light conversion layer 600 may be formed entirely on the reflective surface 510 of the reflective layer 500. The light conversion layer 600 may surround the light emitting unit 300 and the filling unit 400. That is, the light conversion layer 600 may surround the light emitting portion 300. At this time, the inner width of the light conversion layer 600 may become larger as the distance from the light emitting portion 300 increases. That is, the light conversion layer 600 may have a radial structure. The reflective layer 500 and the light conversion layer 600 are inclined with respect to the optical axis OA of the light emitting portion 300.

The light conversion layer 600 is spaced apart from the light emitting portion 300. The light converting layer 600 and the light emitting portion 300 are spaced apart from each other and the filling portion 400 is disposed between the light converting layer 600 and the light emitting portion 300. In addition, the light conversion layer 600 may be in direct contact with the filling part 400.

The light conversion layer 600 is spaced apart from the light emitting portion 300 and is disposed between the light emitting portion 300 and the inner side surface 122 of the cavity C. [ The reflective layer 500 is disposed between the light conversion layer 600 and the inner side surface 122 of the cavity C.

The light conversion layer 600 may be coated on the reflective surface 510 of the reflective layer 500. The thickness of the light conversion layer 600 may be about 0.5 μm to about 100 μm. More specifically, the thickness of the light conversion layer 600 may be about 1 [mu] m to about 10 [mu] m.

The light conversion layer 600 receives light emitted from the light emitting unit 300 and converts the wavelength. For example, the light conversion layer 600 may convert incident blue light into green light and red light. That is, the light conversion layer 600 converts a part of the blue light into green light having a wavelength range of about 520 nm to about 560 nm, and converts the other part of the blue light to a light having a wavelength range of about 630 nm to about 660 nm It can be converted into red light.

The light conversion layer 600 may convert ultraviolet light emitted from the light emitting unit 300 into blue light, green light, and red light. That is, the light conversion layer 600 converts part of the ultraviolet light into blue light having a wavelength range of about 430 nm to about 470 nm, and converts the other part of the ultraviolet light to a light having a wavelength range of about 520 nm to about 560 nm Green light, and another part of the ultraviolet light into red light having a wavelength band between about 630 nm and about 660 nm.

Accordingly, white light can be formed by the light converted by the light conversion layer 600 and the light not converted. That is, the blue light, the green light, and the red light may be combined to emit white light.

The light conversion layer 600 includes a plurality of light conversion particles 610 and a host layer 620.

The light conversion particles 610 are disposed in the cavity C. [ More specifically, the light conversion particles 610 are uniformly dispersed in the host layer 620, and the host layer 620 is disposed inside the cavity C.

The light conversion particles 610 convert the wavelength of the light emitted from the light emitting unit 300. The light conversion particles 610 receive light emitted from the light emitting unit 300 and convert the wavelength. For example, the light conversion particles 610 may convert blue light emitted from the light emitting unit 300 into green light and red light. That is, some of the light conversion particles 610 convert the blue light into green light having a wavelength range of about 520 nm to about 560 nm, and another part of the light conversion particles 610 converts the blue light to about 630 And can be converted into red light having a wavelength band of from about nm to about 660 nm.

Alternatively, the light conversion particles 610 may convert ultraviolet light emitted from the light emitting unit 300 into blue light, green light, and red light. That is, some of the light conversion particles 610 convert the ultraviolet light into blue light having a wavelength range of about 430 nm to about 470 nm, and another part of the light conversion particles 610 converts the ultraviolet light to about 520 Can be converted into green light having a wavelength band between nm and 560 nm. Further, another part of the light conversion particles 610 may convert the ultraviolet ray into red light having a wavelength band of about 630 nm to about 660 nm.

That is, when the light emitting unit 300 generates blue light, the light converting particles 610 converting blue light into green light and red light, respectively, may be used. Alternatively, when the light emitting unit 300 generates ultraviolet rays, the light conversion particles 610 converting ultraviolet light into blue light, green light, and red light, respectively, may be used.

The light conversion particles 610 may be a plurality of quantum dots (QDs). The quantum dot may include core nanocrystals and shell nanocrystals surrounding the core nanocrystals. In addition, the quantum dot may include an organic ligand bound to the shell nanocrystal. In addition, the quantum dot may include an organic coating layer surrounding the shell nanocrystals.

The shell nanocrystals may be formed of two or more layers. The shell nanocrystals are formed on the surface of the core nanocrystals. The quantum dot may convert the wavelength of the light incident on the core core crystal into a long wavelength through the shell nanocrystals forming the shell layer and increase the light efficiency.

The quantum dot may include at least one of a group II compound semiconductor, a group III compound semiconductor, a group V compound semiconductor, and a group VI compound semiconductor. More specifically, the core nanocrystals may include Cdse, InGaP, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. The shell nanocrystals may include CuZnS, CdSe, CdTe, CdS, ZnSe, ZnTe, ZnS, HgTe or HgS. The diameter of the quantum dot may be 1 nm to 10 nm.

The wavelength of light emitted from the quantum dots can be controlled by the size of the quantum dots or the molar ratio of the molecular cluster compound and the nanoparticle precursor in the synthesis process. The organic ligand may include pyridine, mercapto alcohol, thiol, phosphine, phosphine oxide, and the like. The organic ligands serve to stabilize unstable quantum dots after synthesis. After synthesis, a dangling bond is formed on the outer periphery, and the quantum dots may become unstable due to the dangling bonds. However, one end of the organic ligand is in an unbonded state, and one end of the unbound organic ligand bonds with the dangling bond, thereby stabilizing the quantum dot.

Particularly, when the quantum dot has a size smaller than the Bohr radius of an exciton formed by electrons and holes excited by light, electricity or the like, a quantum confinement effect is generated to have a staggering energy level and an energy gap The size of the image is changed. Further, the charge is confined within the quantum dots, so that it has a high luminous efficiency.

Unlike general fluorescent dyes, the quantum dots vary in fluorescence wavelength depending on the particle size. That is, as the size of the particle becomes smaller, it emits light having a shorter wavelength, and the particle size can be adjusted to produce fluorescence in a visible light region of a desired wavelength. In addition, since the extinction coefficient is 100 to 1000 times higher than that of a general dye, and the quantum yield is also high, it produces very high fluorescence.

The quantum dot can be synthesized by a chemical wet process. Here, the chemical wet method is a method of growing particles by adding a precursor material to an organic solvent, and the quantum dots can be synthesized by a chemical wet method.

The host layer 620 is disposed on the reflective layer 500. The host layer 620 is entirely coated on the reflective surface 510 of the reflective layer 500 as a whole. The host layer 620 may be in close contact with the reflective layer 500.

The host layer 620 surrounds the light conversion particles 610. That is, the host layer 620 uniformly disperses the light conversion particles 610 therein. The host layer 620 may be composed of a polymer. The host layer 620 is transparent. That is, the host layer 620 may be formed of a transparent polymer.

In the host layer 620, the host layer 620 may include a thermosetting resin or a photocurable resin. Examples of the material used for the host layer 620 include a silicone resin and an epoxy resin.

As described above, the light emitting diode package according to the embodiment arranges the light conversion layer 600 adjacent to the reflective layer 500. The light emitted from the light emitting unit 300 is incident on the light converting layer 600 and then converted into light or the light emitted from the light emitting unit 300 passes through the light converting layer 600 The light is reflected by the reflective layer 500, and then is incident again on the light absorbing layer, and the wavelength of the light can be changed.

As described above, the light emitting diode package according to the embodiment can effectively convert the wavelength of the light from the light emitting unit 300 by forming the light conversion layer 600 on the reflective layer 500.

Therefore, the light emitting diode package according to the embodiment can have improved light conversion efficiency and can have improved color reproducibility.

The light conversion layer 600 is formed not only on the entire interior of the cavity C but also on an area adjacent to the reflective layer 500, for example, on the reflective surface 510 of the reflective layer 500 . Accordingly, the light emitting diode package according to the embodiment can reduce the use of the light conversion particles 610 such as a quantum dot used in the light conversion layer 600. Therefore, the light emitting diode package according to the embodiment can be easily manufactured at low cost.

The light conversion layer 600 may be formed on the inner surface 122 of the cavity C and may be spaced apart from the light emitting portion 300. Accordingly, deterioration of the light conversion layer 600 can be suppressed by the heat generated from the light emitting portion 300. Therefore, the light emitting diode package according to the embodiment can have improved reliability and durability.

Referring to FIGS. 4 and 5, the light emitting diode package according to the embodiment may further include a reflector 700. The reflective portion 700 is disposed adjacent to the optical axis OA of the light emitting portion 300. [ More specifically, the reflective portion 700 is disposed on the optical axis OA of the light emitting portion 300. Also, the reflective portion 700 may be disposed in the cavity C. More specifically, the reflective portion 700 may be disposed in the filling portion 400. The reflective portion 700 may be integrally formed with the filling portion 400.

The reflective portion 700 may include a material having a high reflectivity. More specifically, the reflective portion 700 may include a material having a refractive index much higher than that of the filling portion 400. In addition, the reflective portion 700 may include white PSR (Photo Solder Resist) ink, silver (Ag), aluminum (Al), or the like.

The reflection unit 700 reflects light emitted from the light emitting unit 300. More specifically, the reflector 700 may reflect the light emitted from the light emitting unit 300 to the side. More specifically, the reflective portion 700 may reflect the light emitted from the light emitting portion 300 to the light conversion layer 600.

As shown in FIG. 4, the reflective portion 700 may have a plate shape. The center of the reflector 700 may coincide with the optical axis OA of the light emitting unit 300.

As shown in FIG. 5, the reflective portion 700 may have a horn shape. At this time, the vertex of the reflective portion 700 faces the light emitting portion 300. The vertex of the reflective portion 700 may coincide with the optical axis OA of the light emitting portion 300. The vertex of the reflective portion 700 faces the light emitting portion 300.

Referring to FIG. 6, a depression 401 may be formed in the filling part 400. The depression (401) may be recessed toward the light emitting part (300). Accordingly, the inner surface 410 of the depression 401 can perform the function of the total reflection surface 510. That is, the inner surface 410 of the depression 401 is inclined with respect to the optical axis OA of the light emitting unit 300. The light emitted from the light emitting unit 300 toward the depressed portion 401 may be reflected laterally by the inner surface 410 of the depressed portion 401.

The reflective portion 700 and the depressed portion 401 reflect the light emitted from the light emitting portion 300 to the light conversion layer 600. Accordingly, more light can be incident on the light conversion layer 600 by the reflective portion 700 and the depressed portion 401.

Therefore, the light emitting diode package according to the embodiment can have improved color reproducibility.

In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims

A body portion formed with a cavity;
A light emitting portion disposed in the cavity;
A filling part disposed in the cavity and covering the light emitting part;
A reflective layer disposed on an inner surface and a bottom surface of the cavity;
A reflector spaced apart from the light emitting portion on the light emitting portion and disposed at a position overlapping the optical axis of the light emitting portion;
A light conversion layer disposed adjacent to the reflective layer; And
And lead electrodes disposed on the outside of the body portion and spaced apart from each other on a bottom surface of the cavity,
The refractive index of the reflecting portion is larger than the refractive index of the filling portion,
Wherein the light conversion layer comprises a host layer disposed in direct contact with an inner surface of the cavity; And quantum dots dispersed in the host layer,
Wherein the light emitting portion emits blue light, the light conversion layer converts the blue light into red light and green light,
Wherein the inner side includes a first inner side and a second inner side facing each other,
Wherein the reflective portion includes one end facing the first inner surface and the other end facing the second inner surface,
The width of the reflective portion is defined as a distance from the one end to the other end,
Wherein a size of the first distance from the light conversion layer on the first inner side surface to one end of the reflective portion is greater than a width of the reflective portion and a second distance from the light conversion layer on the second inner side to the other end of the reflective portion, Is larger than the width of the reflective portion,
The inner width of the light conversion layer increases as the distance from the light emitting portion increases,
Wherein the light emitting portion, the light conversion layer, and the reflective layer are disposed in direct contact with the same surface of one of the lead electrodes.

The light emitting device according to claim 1, wherein the light conversion layer covers the reflective surface of the reflective layer.

The light emitting device according to claim 2, wherein the thickness of the light conversion layer is 0.5 to 100 탆.

3. The device of claim 2, wherein the light conversion layer is in direct contact with the reflective layer,
And the light emitting unit is spaced apart from the light emitting unit.

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The light emitting device according to claim 1, wherein the reflective portion has a horn shape.

The light emitting device according to claim 6, wherein a vertex of the reflective portion faces the light emitting portion.

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The light emitting device according to claim 1, wherein the light conversion layer surrounds the periphery of the filling portion.

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