KR101039974B1 - Light emitting device, method for fabricating the same, and light emitting device package - Google Patents

Light emitting device, method for fabricating the same, and light emitting device package Download PDF

Info

Publication number
KR101039974B1
KR101039974B1 KR1020100027487A KR20100027487A KR101039974B1 KR 101039974 B1 KR101039974 B1 KR 101039974B1 KR 1020100027487 A KR1020100027487 A KR 1020100027487A KR 20100027487 A KR20100027487 A KR 20100027487A KR 101039974 B1 KR101039974 B1 KR 101039974B1
Authority
KR
South Korea
Prior art keywords
light emitting
phosphor
layer
semiconductor layer
conductive semiconductor
Prior art date
Application number
KR1020100027487A
Other languages
Korean (ko)
Inventor
장기연
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100027487A priority Critical patent/KR101039974B1/en
Application granted granted Critical
Publication of KR101039974B1 publication Critical patent/KR101039974B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

The light emitting device according to the embodiment includes a plurality of light emitting structures including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; A phosphor layer on at least one light emitting structure of the plurality of light emitting structures; A first electrode member commonly connected to the plurality of light emitting structures; And a second electrode on each of the light emitting structures.

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE}

Embodiments relate to a light emitting device, a light emitting device manufacturing method, and a light emitting device package.

Light Emitting Diodes (LEDs) are light emitting devices that convert current into light. In recent years, the light emitting diode has gradually increased in brightness and is being used as a light source for a display, an automotive light source, and an illumination light source.

Recently, high output light emitting chips capable of realizing full color by generating short wavelength light such as blue or green have been developed. Therefore, by applying a phosphor on the light emitting chip that absorbs a part of the light output from the light emitting chip and outputs a wavelength different from the light wavelength, light emitting diodes of various colors can be combined and a light emitting diode emitting white light can be realized. Do.

The embodiment provides a light emitting device, a light emitting device manufacturing method, and a light emitting device package capable of easily and accurately adjusting the distribution position and distribution of phosphors having different colors on a light emitting device chip, and improving light efficiency. .

The light emitting device according to the embodiment includes a plurality of light emitting structures including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; A phosphor layer on at least one light emitting structure of the plurality of light emitting structures; A first electrode member commonly connected to the plurality of light emitting structures; And a second electrode on each of the light emitting structures.

The light emitting device according to the embodiment includes a second electrode member including an electrode layer having a reflective material; A plurality of light emitting structures including an active layer between the second conductive semiconductor layer, the first conductive semiconductor layer, and the first and second conductive semiconductor layers on the second electrode member; A phosphor layer including a plurality of holes formed in at least one of the uppermost semiconductor layers of the plurality of light emitting structures and phosphor particles embedded in the holes; And a first electrode formed on each of the plurality of light emitting structures.

In another embodiment, a light emitting device package manufacturing method includes: forming a first conductive semiconductor layer on a substrate; Forming a plurality of light emitting structures including a plurality of divided active layers and a second conductive semiconductor layer on the first conductive semiconductor layer; And forming a plurality of holes on the at least one layer of the plurality of light emitting structures and a phosphor layer having phosphor particles embedded in the plurality of holes.

The light emitting device package according to the embodiment includes a body; A plurality of lead electrodes on the body; And a light emitting device electrically connected to the plurality of lead electrodes, the light emitting device comprising: a plurality of light emitting structures including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A phosphor layer on at least one light emitting structure of the plurality of light emitting structures; A first electrode member commonly connected to the plurality of light emitting structures; And a second electrode on each of the light emitting structures.

The embodiment can easily and accurately control the distribution position and distribution of phosphors having different colors on a light emitting device chip, and can provide a light emitting device capable of improving light efficiency and a method of manufacturing the same.

1 is a perspective view of a light emitting device according to a first embodiment.
2 is a plan view of a light emitting device according to the first embodiment.
3 to 5 are manufacturing state diagrams of the light emitting device according to the first embodiment.
6 is an exemplary view of phosphor particles of a light emitting device according to an embodiment.
7 is a view showing a light emitting device according to a second embodiment.
8 is a view showing a light emitting device package according to the embodiment.
9 is a diagram illustrating a display device according to an exemplary embodiment.
10 is a diagram illustrating another example of a display device according to an exemplary embodiment.
11 is a view showing a lighting apparatus according to an embodiment.

Hereinafter, a light emitting device and a method of manufacturing the same according to an embodiment will be described in detail with reference to the accompanying drawings. In the description of an embodiment, each layer (film), region, pattern, or structure is formed “on” or “under” a substrate, each layer (film), region, pad, or pattern. In the case where it is described as "to", "on" and "under" include both "directly" or "indirectly" formed. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings. In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

1 is a perspective view of a light emitting device according to the first embodiment, and FIG. 2 is a plan view of the light emitting device according to the first embodiment.

1 and 2, the light emitting device 100 includes a substrate 101, a first conductive semiconductor layer 110, a plurality of light emitting structures 102, 103, 104, and a light emitting structure 102, 103, 104. ) And a plurality of phosphor layers 210, 220, and 230, respectively, and a first electrode 115 and a plurality of second electrodes 150, 152, and 154.

The substrate 101 may include a sapphire substrate Al 2 O 3 and a transparent substrate such as glass. In addition, the substrate 101 may be selected from the group consisting of GaN, SiC, ZnO, Si, GaP and GaAs, conductive substrates, and the like. Hereinafter, the embodiment will be described as an example of the sapphire substrate. An uneven pattern may be formed on the upper surface of the substrate 101. A buffer layer or an undoped semiconductor layer may be formed on the substrate 101 to reduce the difference in lattice constant or to reduce crystal defects.

The first conductive semiconductor layer 110 is formed on the substrate 101. The first conductive semiconductor layer 110 may be formed of at least one n-type semiconductor layer doped with the first conductive dopant on the substrate 101. The first conductive semiconductor layer 110 may be formed of at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. When the first conductive semiconductor layer 110 is set as an electron injection layer, the first conductive dopant is an n-type dopant and may include Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 110 may then function as an electrode contact layer.

Two or three or more light emitting structures 102, 103, and 104 may be formed on the first conductive semiconductor layer 110. The light emitting structures 102, 103, and 104 may include an upper end portion of the first conductive semiconductor layer 110, active layers 120, 122, and 124, and second conductive semiconductor layers 130, 132, and 134. have. Each of the light emitting structures 102, 103, and 104 may be disposed at a lower end of each of the light emitting structures 102, 103, and 104, and the upper end of the first conductive semiconductor layer 110 may be divided by structure regions. When dividing the light emitting structures 102, 103, and 104, the light emitting structures 102, 103, and 104 may be formed to be stepped with the top surface of the first conductive semiconductor layer 110, but the present invention is not limited thereto.

Each of the active layers 120, 122, and 124 may be selectively formed on the first conductive semiconductor layer 110 among a single quantum well, a multiple quantum well (MQW) structure, a quantum line structure, and a quantum dot structure. The active layers 120, 122, and 124 can generate colored light such as blue, green, and red, or white light and ultraviolet light. InGaN / GaN, AlGaN / GaN, or InAlGaN / GaN GaAs, / AlGaAs (InGaAs), GaP / AlGaP (InGaP), or the like may be used to form the active layers 120, 122, and 124. The wavelength of light emitted may be adjusted according to the band gap energy of the material forming the barrier layer. For example, in the case of blue light emission with a wavelength of 460 to 470 nm, an InGaN well layer / GaN barrier layer may be formed in one cycle.

The second conductive semiconductor layers 130, 132, and 134 may be implemented as p-type semiconductor layers doped with a second conductive dopant on each of the active layers 120, 122, and 124. The second conductive semiconductor layers 130, 132 and 134 may be any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP, etc. Can be done. The second conductive dopant is a p-type dopant, and at least one of Mg, Zn, Ca, Sr, and Ba may be added. Here, the light emitting structures 102, 103, and 104 include the first conductive semiconductor layer 110, the active layers 120, 122, and 124, and the second conductive semiconductor layers 130, 132, and 134 as minimum components. In addition, other semiconductor layers may be further included above and below each layer. A layer having a polarity opposite to that of the second conductive type, for example, an n-type semiconductor layer, may be further formed on the second conductive type semiconductor layers 130, 132, and 134. The first conductive semiconductor layer 110 may be formed in a p-type, and the second conductive semiconductor layers 130, 132, and 134 may be formed in an n-type, and thus the stacking order may be different. Accordingly, the light emitting structures 102, 103, and 104 include at least one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. Hereinafter, the second conductive semiconductor layer will be described as an example of the uppermost layer of the light emitting structures 102, 103, and 104.

The first electrode 115 is formed in a predetermined pattern on the first conductive semiconductor layer 110, and the first electrode 115 is a common electrode (eg, an anode) of the light emitting structures 102, 103, and 104. Can be used as Second electrodes 150, 152, and 154 are formed in a predetermined pattern on the second conductive semiconductor layers 130, 132, and 134 of the light emitting structures 102, 103, and 104. The second electrodes 150, 152, and 154 are used as individual electrodes (eg, cathodes).

The plurality of light emitting structures 102, 103, and 104 may be defined as, for example, a first light emitting structure 102, a second light emitting structure 103, and a third light emitting structure 104 when divided into three regions. . When the first light emitting structure to the third light emitting structure (102, 103, 104) is supplied with power to the first electrode 115 and the second electrode (150, 152, 154), each active layer (120, 122, 124) The main light emits at least one of light such as red, green, blue, and UV light.

The first phosphor layer 210 is formed on the first light emitting structure 102, the second phosphor layer 220 is formed on the second light emitting structure 103, and the third phosphor layer is formed on the third light emitting structure 104. 230 may be formed. The phosphor layers 210, 220, and 230 may be formed in a form in which phosphors in a particulate state are uniformly fixed on the second conductive semiconductor layers 130, 132, and 134 of the structures 102, 103, and 104. have. Each of the phosphor layers 210, 220, and 230 absorbs light emitted from the light emitting structures 102, 103, and 104 to excite light having different wavelengths, and the light includes at least one of red, green, blue, yellow, and the like. At least one of the phosphor layers 210, 220, and 230 may include heterogeneous phosphors.

The first to third phosphor layers 210, 212 and 214 include ball type phosphor particles 215, 225 and 235, and the ball type phosphor particles 215, 225 and 235 are distributed in the phosphor layers 210, 212 and 214. The diameter of the phosphor particles 215, 225, 236 may include 3 ~ 100㎛, but is not limited thereto.

The phosphor layers 210, 220, and 230 absorb light from the active layers 120, 122, and 124, and convert the light into different color light to emit light. The color of the light emitted from each of the light emitting structures 102, 103, and 104 is emitted in different colors of the first light, the second light, and the third light according to the color of the phosphor included in the phosphor layers 210, 220, and 230. Can be. The first to third lights may be the same color spectrum, or may emit light in two or more color spectrums, respectively.

The phosphor layers 210, 220, and 230 may be formed on the top surface of the second conductive semiconductor layer 140 of each light emitting structure 102, 103, 104. Each phosphor layer 210, 220, 230 may include phosphors having different colors. In addition, the phosphor layers 210, 220, and 230 may be selectively formed only on one or two light emitting structures of the plurality of light emitting structures 102, 103, and 104.

When at least two of the first to third lights are emitted from the phosphor layers 210, 220, and 230, the light may be mixed with the light of the active layers 120, 122, and 124 to implement a specific color.

Various colors of light may be obtained according to the color combinations of the light emitted from the active layers 120, 122, and 124 and the first to third phosphor layers 210, 220, and 230. In the following description, color combinations for obtaining white light are illustrated. Shall be.

Light of the active layers 210, 212, and 214 may be blue, the first phosphor layer 210 and the second phosphor layer 212 may be green phosphor layers, and the third phosphor layer 214 may include a red phosphor layer. have. By combining these colors, white light can be obtained. Here, two of the three phosphor layers are green phosphor layers, and one is arranged as a red phosphor layer, but may be implemented in a structure opposite thereto.

When the light of the active layers 210, 212, 214 is green, the first and second phosphor layers 210, 212 are blue phosphor layers, and the third phosphor layer 214 is a red phosphor layer, which is a combination of white light. (white) light can be obtained.

When the light of the active layers 210, 212 and 214 is cyan, the first phosphor layer 210 is a magenta phosphor layer, and the second and third phosphor layers 212 and 214 are red phosphor layers. Can be implemented.

When the light of the active layers 210, 212, 214 emits UV light, the first to third phosphor layers 210, 212, 214 may be red, green, and blue phosphor layers. In combination, white light can be obtained. In addition to the above phosphor layer, white light can be obtained even when a combination of magenta, cyan, and yellow phosphors is selectively combined.

In addition, the light of the active layers 210, 212, 214 is combined with the green light and the red light of the red phosphor layer to obtain yellow light, or the blue light of the active layers 210, 212, 214. It is also possible to implement a light emitting device that emits colored light, such as combining cyan light by combining the green of the green phosphor layer, and is not limited to the illustrated color combination.

In addition, when power is supplied to at least one of the first electrode 115 and the second electrodes 150, 152, and 154, the light emitting device 100 generates main light from at least one of the active layers 210, 212, and 214. Light is absorbed by the phosphor layers 210, 212, and 214 to emit at least one of the first light, the second light, and the third light, and the emitted light is mixed with each other. Accordingly, at least one of the main light and the first to third light may be mixed to emit light of various colors such as red, green, blue, and white, and a full color light emitting device may be realized.

Although the first to third light emitting structures 102, 103, and 104 on the second conductive semiconductor layers 130, 132, and 134 are illustrated in a shape aligned in one direction, two planes are formed in a polygonal or circular shape in a plane. It can form in the form divided into the above. In addition, the regions of each of the light emitting structures 102, 103, and 104 may be formed to have different sizes so that specific colors may be emphasized on the final package.

3 to 5 are manufacturing state diagrams of the light emitting device according to the first embodiment, and illustrate a process of forming the phosphor layers 210, 220, and 230. Since the first to third phosphor layers 210, 220, and 230 may be manufactured in the same manner, the manufacturing state of the first phosphor layer 210 will be described below.

As shown in FIG. 3, in order to form the phosphor particles 215, the phosphor mixed solution 320 is injected into the molding die 300 modeling the shape of the desired phosphor particles 215.

In the mold 300, a shape of the phosphor particles 215 is formed in the recess 310 to accommodate the phosphor mixed solution 320. The recess 310 may be formed in a spherical shape, an oval shape, or a polygonal shape such as a hexahedron, tetrahedron, or octahedron according to the shape of the phosphor particle 215 to be formed. In addition, depending on the size of the phosphor particles 215, it may be formed in a variety of sizes from a few ㎛ to 1mm or more, preferably, may have a diameter of about 3 ~ 100㎛. Here, the mold 300 may be configured in a form in which a pair of mold 300 is matched with each other to complete the shape of the phosphor particles 215 according to the shape of the phosphor particles 215.

The phosphor mixed solution 320 may be formed by mixing a phosphor and a resin. As the phosphors to be mixed, various kinds of red, green, and blue phosphors, such as silicate series, sulfide series, garnet series, nitride series, yttrium, aluminum, and the like, may be selectively applied. The resin constituting the phosphor mixture is a substance capable of mixing and curing the phosphor, and various materials such as silicone and transparent epoxy resin may be applied. A predetermined solvent for viscosity control may be added to the mixture of the phosphor and the resin.

4 illustrates a process of separating the phosphor particles 215.

Referring to FIG. 4, when the phosphor mixed solution 320 is filled in the recess 310 of the mold 300 and cured, phosphor particles 215 according to the shape of the recess 310 are formed.

When the cured phosphor particles 215 are separated from the mold 300, phosphor particles 215 having a predetermined shape may be obtained. Accordingly, since the phosphor particles 215 may be formed by providing as much phosphor mixture 320 as necessary and filling the concave portion 310, it is possible to prevent waste such as phosphors leaking or curing before use. have.

5 illustrates a method of forming the phosphor layer 210 on a light emitting device.

Referring to FIG. 5, a plurality of holes 213 are formed on the resin layer 212 in the phosphor layer 210 on the second conductive semiconductor layer 130 to fix the phosphor particles 215. The hole 213 may be a reactive ion etching (RIE) method using a photoresist, a nano imprint method, a tape adhesive method, or the like with respect to the resin layer 212. Here, the shape of the hole 213 may be formed to match the shape of the phosphor particles 215, the interval may be arranged at regular intervals or irregular intervals. It is possible to control the light emitting characteristics of the light emitting device by adjusting the arrangement method, the arrangement interval, and the like.

The resin layer 212 is not formed, and the hole 213 may be directly formed on the second conductive semiconductor layer 130 or another semiconductor layer. The hole 213 may be formed on the semiconductor layer by growing the second conductive semiconductor layer 130 and forming the same by wet or / and dry etching, or by forming the second conductive semiconductor layer 130. When growing, it may be formed by growing at a lower temperature than other layers, and the hole forming method is not limited thereto.

When the phosphor particles 215 are applied to the resin layer 212 on which the holes 213 are formed, the phosphor particles 215 are accommodated in the holes 213. One phosphor particle 215 is accommodated in one hole 213 to accommodate the light distribution, but one hole 213 may be maintained according to the size or shape of the hole 213 and the phosphor particle 215. It is also possible to accommodate the plurality of phosphor particles 215 in the chamber.

When the phosphor particles 215 are coated and cured in the holes 213 of the resin layer 212, the phosphor layer 210 is formed on the second conductive semiconductor layer 130. The phosphor particles 215 accommodated in the holes 213 may be fixed using a resin, or may be fixed through a curing process.

6 is an exemplary view of phosphor particles 215, 225, and 235 of the light emitting device according to the present embodiment.

Referring to FIG. 6, by adjusting the size and shape of the phosphor particles 215, 225, and 235, it is possible to adjust chromaticity, light emission characteristics, light efficiency, and the like of the light emitting device 100. The phosphor particles 215, 225, and 235 of various sizes and shapes may be applied according to the design conditions of 100.

FIG. 6A illustrates phosphor particles 215, 225, and 235 having an equilateral triangle in cross section, and FIG. 6B illustrates a phosphor having a cube shape. (c) illustrates phosphor particles 215, 225, 235 having an octahedron in cross section, and (d) illustrates phosphor particles 215, 225, 235 having a rhombus in cross section. (e) illustrates phosphor particles 215, 225 and 235 having a trapezoid in cross section, and (f) illustrates cylindrical phosphor particles 215, 225 and 235. (g) illustrates phosphor particles 215, 225, 235 having a right triangle in cross section, and (h) illustrates phosphor particles 215, 225, 235 having a parallelogram in cross section.

As shown in (a) to (h) of FIG. 6, the phosphor particles 215, 225, and 235 may be formed in various polygonal shapes such as polyhedrons, horns, columns, and the like. Without limitation, phosphor particles 215, 225, and 235 of various shapes, such as horns and spheres, may be applied.

According to this embodiment, the chromaticity can be easily and accurately adjusted by adjusting the size and arrangement interval of the phosphor particles 215, 225, and 235, and the color distribution can be narrowed. In addition, when the hole 213 is formed in FIG. 5, a photonic crystal may be formed on the top surfaces of the second conductive semiconductor layers 130, 132, and 134 as shown in FIG. 1 to improve the luminous efficiency.

7 is a perspective view illustrating a light emitting device according to a second embodiment.

Referring to FIG. 7, the light emitting device 300 includes a conductive support member 301, an electrode layer 310, first to third light emitting structures 302, 303, and 304, first to third phosphor layers 210, 220, and 230, and electrodes 150, 152, and 154. ).

The conductive support member 301 may be formed of a material such as copper, gold, a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, etc.). The conductive support member 301 may not be replaced or formed with another electrode material according to the thickness or strength of the electrode layer 310, or the conductive support member 270 may be implemented with a conductive sheet.

The electrode layer 310 includes at least one of an ohmic layer, a reflective layer, and a seed layer, and the ohmic layer is a contact layer including a material having ohmic and reflective characteristics, and the ohmic layer is a lowermost layer of the light emitting structures 302, 303, and 304. For example, the second conductive semiconductor layer may be in ohmic contact, and the reflective layer may reflect incident light. The ohmic layer may be a light transmissive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or a metal such as Ni or Ag. The reflective layer may be formed of a structure including at least one layer made of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and combinations thereof. . Here, the electrode layer 310 may be in ohmic contact with a metal or ohmic contact using a light transmissive conductive layer such as ITO, but is not limited thereto.

A bonding layer may be further formed between the electrode layer 310 and the conductive support member 301, and may be used as a barrier metal or a bonding metal under the bonding layer 310, and the material may be, for example, Ti. It may be formed to include at least one of Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag or Ta.

Here, after the electrode layer 310 or the conductive support member 301 is formed, the growth substrate of FIG. 1 is removed, wherein the growth substrate is a first conductive semiconductor layer, an active layer, and a second conductive semiconductor. After forming the light emitting structure including the layer, the electrode layer 310 and the conductive support member 301 are formed. Thereafter, the growth substrate is removed by physical methods (e.g., laser lift off) or / and chemical methods (wet etching, etc.), and isolated through the direction in which the growth substrate is removed to divide the light emitting structure into a plurality. Subsequently, a first electrode is formed on each of the divided first conductive semiconductor layers.

In addition, before or after forming the first electrode, the phosphor layers 210, 220, and 230 may be formed on upper surfaces of the light emitting structures 302, 303, and 304. Each phosphor layer 210, 220, 230 may include phosphors having different colors. In addition, the phosphor layers 210, 220, and 230 may be selectively formed only on one or two light emitting structures among the plurality of light emitting structures 302, 303, and 304.

In addition, a first phosphor layer 210 is formed on the first light emitting structure 302, a second phosphor layer 220 is formed on the second light emitting structure 303, and a third phosphor is formed on the third light emitting structure 304. The phosphor layer 230 may be formed. Each phosphor layer 210, 220, 230 may be formed in a form in which phosphors in a particulate state are uniformly fixed on the uppermost semiconductor layer of each structure 102, 103, 104.

The first to third phosphor layers 210, 212, and 214 include ball type phosphors 215, 225, and 235, and the ball type phosphors 215, 225, 235 are distributed in each phosphor layer 210, 212, 214, and the diameter includes 3 to 100 μm. can do.

The phosphor layers 210, 220, and 230 absorb light emitted from the light emitting structures 302, 303, and 304, and convert the light into different color light to emit light. The color of the light emitted from each of the light emitting structures 302, 303, and 304 is different from each other according to the color of the phosphor included in the phosphor layers 210, 220, and 230. Can be. The first to third lights may be the same color spectrum, or may emit light in two or more color spectrums, respectively.

When at least two of the first to third lights are emitted from the phosphor layers 210, 220, and 230, the light may be mixed with the light of the light emitting structures 302, 303, and 304 to implement a specific color.

FIG. 7 may not remove a portion of the light emitting structure through etching to provide a separate common electrode as shown in FIG. 1. Accordingly, the light emitting area of the light emitting structure is larger than that of FIG. 1. The light emitted from the light emitting structures 302, 303, and 304 may be selectively mixed with the light emitted from the phosphor layers 210, 220, and 230 to implement a target light.

The embodiment does not form the phosphor layers 210, 220, and 230 having phosphor particles on the top semiconductor layers of the light emitting structures 302, 303, and 304, and the phosphor particles are n-type semiconductor layers that are the top conductive semiconductor layers of the light emitting structures 302, 303, and 304. Can be directly integrated into the embedded form. In other words, when the uppermost first conductive semiconductor layer of the light emitting structures 302, 303, 304 is an n-type semiconductor layer, the thickness of the first conductive semiconductor layer may be several μm (for example, 1.5˜9 μm). Since it is relatively thicker than the layer, the upper part of the at least one divided first conductive semiconductor layer may be etched to directly form a plurality of holes, and the phosphor particles may be directly applied to the plurality of holes. The etching includes wet or / and dry etching.

In addition, roughness may be formed on upper surfaces of the light emitting structures 302, 303, and 304, and the phosphor particles may be directly applied between the roughnesses. Light emitted from the phosphor particles may be implemented as light and target light of the light emitting structure.

The conductive support member 301 is connected to the second conductive semiconductor layers of the divided light emitting structures 302, 303, and 304 as a common electrode, and drives individual light emitting structures through electrodes connected to the first conductive semiconductor layers, respectively. To control.

8 is a view showing a light emitting device package according to a third embodiment.

Referring to FIG. 8, the light emitting device package 400 includes a body 401, a plurality of lead electrodes 405, 406, 407, and 408, and a light emitting device 100.

The body 401 may use a general PCB, a FR-4, a ceramic substrate, a silicon substrate, a resin material, or the like, and a cup-shaped cavity 403 is formed on the body 401.

The cavity 403 has a circular or polygonal surface shape, but is not limited thereto. The cavity 403 of the body 401 may etch the body 401, or may have an injection structure or a laminated structure.

The light emitting device 100 includes the first to third light emitting structures 102, 103, and 104, and the phosphor layers 210, 220, and 230 of FIG. 1 are stacked on the light emitting structures 102, 103, and 104, respectively. The light emitting structures 102, 103, and 104 may emit at least one of light such as red, green, blue, and UV, and the phosphor layers 210, 220, and 230 may emit light such as red, green, blue, and yellow.

The lead electrodes 405, 406, 407, and 408 include a plurality of patterns and are electrically connected to the first to third light emitting structures 102, 103, and 104. The number of the lead electrodes 405, 406, 407 may be formed for the individual driving of the first to third light emitting structures 102, 103, 104. For example, four lead electrodes 405, 406, 407, 408 may be formed for the three light emitting structures 102, 103, 104. Can be. The lead electrodes 405, 406, 407, and 408 are disposed to be open to each other in the cavity 403.

The light emitting device 100 may be attached to any one of the plurality of lead electrodes 405, 406, 407, and 408, and may be electrically connected to each of the lead electrodes 405, 406, 407, and 408 through wires 411, 412, 413, and 414. The embodiment discloses a structure in which the lead electrodes 405, 406, 407, and 408 are connected to each other using wires 411, 412, 413, and 414, but may be changed by employing flip bonding, die bonding, or the like within the technical scope of the embodiment.

Translucent resin 440 may be molded in the cavity 403. The translucent resin 440 may include silicon or epoxy. In addition, the light-transmissive resin 440 may include a phosphor or a phosphor layer, but is not limited thereto.

The light emitting device package 400 may be implemented in full color (including white) by mounting the light emitting device 100 having a plurality of light emitting structures 102, 103, and 104. This eliminates the inconvenience of placing another LED chip to implement full color.

A plurality of semiconductor light emitting devices or light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. The light unit may be implemented in a top view or a side view type, and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to an illumination device and a pointing device. Another embodiment may be implemented as a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a street lamp.

The semiconductor light emitting device according to the embodiment (s) may be packaged in a semiconductor substrate such as a resin material or silicon, an insulating substrate, a ceramic substrate, or the like, and may be used as a light source for an indicator device, a lighting device, and a display device. In addition, each embodiment is not limited to each embodiment, it can be selectively applied to other embodiments disclosed above, but is not limited to each embodiment.

The light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting device packages are arranged, and includes a display device as shown in FIGS. 9 and 10 and a lighting device as shown in FIG. Can be.

9 is an exploded perspective view of a display device according to an exemplary embodiment.

9, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 includes a substrate 1033 and a light emitting device package 100 according to the embodiment disclosed above, wherein the light emitting device or the light emitting device package 100 is disposed on the substrate 1033 at predetermined intervals. Can be arrayed. That is, the light emitting devices may be arranged in a chip or package form on the substrate 1033.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 100 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

The plurality of light emitting device packages 100 may be mounted on the substrate 1033 such that an emission surface on which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 100 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

10 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 10, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 100 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 100 may be defined as a light emitting module 1060. The bottom cover 1152, the at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit, and light emitting devices may be arranged on the substrate 1129 in a chip or package form.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

11 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 11, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device or a light emitting device package 200 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals. The light emitting devices may be arranged on the substrate 1532 in the form of chips or packages.

The substrate 1532 may be a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 200 may be mounted on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

100 light emitting device 101 substrate
110: first conductive semiconductor layer 115: first electrode
102, 103, 104: light emitting structure
120, 122, 124: active layer
130, 132, 134: second conductive semiconductor layer
150, 152, 154: second electrode

Claims (31)

A plurality of light emitting structures including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A phosphor layer on at least one light emitting structure of the plurality of light emitting structures;
A first electrode member commonly connected to the plurality of light emitting structures; And
A light emitting device comprising a second electrode on each light emitting structure. The light emitting device of claim 1, wherein the phosphor layer comprises a plurality of phosphor layers formed on the plurality of light emitting structures. The method of claim 1, wherein the phosphor layer comprises: a plurality of holes formed on the phosphor layer; And phosphor particles embedded in the plurality of holes. The method of claim 3,
The hole of the phosphor layer, the light emitting device is formed in the shape of a sphere or polygon. The method of claim 3,
The phosphor particles are formed in at least one of sphere, polygon, horn, horn, columnar shape. The method of claim 3,
The phosphor particle includes at least one kind of phosphor and a resin covering the phosphor. The method of claim 3, wherein the light emitting structure is a second conductive semiconductor layer is disposed under the phosphor layer,
The second conductive semiconductor layer is a p-type semiconductor layer. The method of claim 7, wherein the first electrode member is electrically connected to the first conductive semiconductor layer,
A light emitting device in which the active layer and the second conductive semiconductor layer are divided into a plurality of portions on the first conductive semiconductor layer. 4. The light emitting device of claim 3, wherein the light emitting structure includes a first conductive semiconductor layer disposed under the phosphor layer, and the first conductive semiconductor layer is an n-type semiconductor layer. The method of claim 9, wherein the first electrode member comprises an electrode layer including a reflective material disposed under the second conductive semiconductor layer.
A light emitting device in which the second conductive semiconductor layer, the active layer, and the first conductive semiconductor layer are divided and disposed on the first electrode member. The method of claim 1, wherein the light emitting structure is disposed in the order of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer,
And a third conductive semiconductor layer having a polarity opposite to that of the second conductive type on the second conductive semiconductor layer. The method of claim 3, wherein the phosphor layer comprises one of red phosphors, green phosphors, blue phosphors, yellow phosphors or heterologous phosphors,
The phosphor particle has a diameter of 3 ~ 100㎛. The light emitting device of claim 6, wherein the resin comprises at least one of a silicone and an epoxy resin covering the phosphor. The light emitting device of claim 3, wherein the plurality of light emitting structures emit one or more of light of red, green, blue, cyan, and UV. The light emitting device of claim 3, wherein the plurality of light emitting structures include at least two light emitting structures emitting at least one of red, green, and blue light. A second electrode member including an electrode layer having a reflective material;
A plurality of light emitting structures including an active layer between the second conductive semiconductor layer, the first conductive semiconductor layer, and the first and second conductive semiconductor layers on the second electrode member;
A phosphor layer including a plurality of holes formed in at least one of the uppermost semiconductor layers of the plurality of light emitting structures and phosphor particles embedded in the holes; And
A light emitting device comprising a first electrode formed on each of the plurality of light emitting structure. The light emitting device of claim 16, wherein the second electrode member comprises an ohmic layer in ohmic contact with a second conductive semiconductor layer of the plurality of light emitting structures, and a reflective layer under the ohmic layer. The light emitting device of claim 16, further comprising a conductive support member under the second electrode member. The light emitting device of claim 16, wherein the phosphor layer comprises a plurality of phosphor layers disposed on the plurality of light emitting structures. The method of claim 19, wherein the plurality of light emitting structures emit one or more of light of red, green, blue, cyan, and UV.
The plurality of phosphor layers emits light different from the light emitted from the plurality of light emitting structures, and includes at least one of red, blue, green, and yellow light. The light emitting device of claim 16, wherein the uppermost semiconductor layer of the plurality of light emitting structures is an n-type semiconductor layer. Forming a first conductive semiconductor layer on the substrate;
Forming a first to third light emitting structure separated on the first conductive semiconductor layer; And
Forming a phosphor layer on at least one layer of the first to third light emitting structures,
The forming of the phosphor layer may include forming a plurality of holes on the phosphor layer; And forming phosphor particles in the plurality of holes. The method of claim 22,
Forming the first to third light emitting structure separated on the first conductive semiconductor layer,
Forming a plurality of active layers on the first conductive semiconductor layer;
And forming a plurality of second conductive semiconductor layers on the plurality of active layers. The method of claim 23, wherein the second conductive semiconductor layer comprises an n-type semiconductor layer or a p-type semiconductor layer,
And a phosphor layer disposed on the plurality of second conductive semiconductor layers, respectively. The method of claim 22,
Forming a plurality of holes of the phosphor layer,
A method of manufacturing a light emitting device comprising the step of forming the hole using any one of a reactive ion etching (RIE) method, a wet etching method, a nano imprint method, and a tape adhesive method. The method of claim 22,
The hole is a method of manufacturing a light emitting device comprising at least one of the shape of a sphere, polygon, horn, horn. The method of claim 26,
The method of manufacturing a light emitting device comprising applying the phosphor particles in the hole. The method of claim 26,
Forming the phosphor particles, a method of manufacturing a light emitting device to mix the phosphor and the resin to cure in the form corresponding to the hole. The method of claim 22,
The phosphor particle is a method of manufacturing a light emitting device comprising at least one of a red phosphor, a green phosphor, a blue phosphor, a yellow phosphor. Body;
A plurality of lead electrodes on the body; And
A light emitting device electrically connected to the plurality of lead electrodes,
The light emitting device includes: a plurality of light emitting structures including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A phosphor layer on at least one light emitting structure of the plurality of light emitting structures; A first electrode member commonly connected to the plurality of light emitting structures; And a second electrode on each of the light emitting structures. The light emitting device package of claim 30, wherein the plurality of light emitting structures are connected to the plurality of lead electrodes in parallel.
KR1020100027487A 2010-03-26 2010-03-26 Light emitting device, method for fabricating the same, and light emitting device package KR101039974B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100027487A KR101039974B1 (en) 2010-03-26 2010-03-26 Light emitting device, method for fabricating the same, and light emitting device package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100027487A KR101039974B1 (en) 2010-03-26 2010-03-26 Light emitting device, method for fabricating the same, and light emitting device package

Publications (1)

Publication Number Publication Date
KR101039974B1 true KR101039974B1 (en) 2011-06-09

Family

ID=44405246

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100027487A KR101039974B1 (en) 2010-03-26 2010-03-26 Light emitting device, method for fabricating the same, and light emitting device package

Country Status (1)

Country Link
KR (1) KR101039974B1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160011869A (en) * 2014-07-23 2016-02-02 엘지이노텍 주식회사 Light emitting device
WO2017146493A1 (en) * 2016-02-23 2017-08-31 엘지이노텍 주식회사 Light-emitting element package and display device having same
US9905543B2 (en) 2016-02-26 2018-02-27 Samsung Electronics Co., Ltd. Light-emitting diode (LED) device
US10230021B2 (en) 2015-09-30 2019-03-12 Samsung Electronics Co., Ltd. Light emitting device package
WO2022203099A1 (en) * 2021-03-25 2022-09-29 엘지전자 주식회사 Light emitting device package and display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100803730B1 (en) 2006-09-29 2008-02-15 서울반도체 주식회사 Fabrication method of light emitting diode
KR20080070414A (en) * 2007-01-26 2008-07-30 엘지전자 주식회사 Led package and method for manufacturing the same
KR20090080217A (en) * 2008-01-21 2009-07-24 엘지전자 주식회사 Nitride light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100803730B1 (en) 2006-09-29 2008-02-15 서울반도체 주식회사 Fabrication method of light emitting diode
KR20080070414A (en) * 2007-01-26 2008-07-30 엘지전자 주식회사 Led package and method for manufacturing the same
KR20090080217A (en) * 2008-01-21 2009-07-24 엘지전자 주식회사 Nitride light emitting device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160011869A (en) * 2014-07-23 2016-02-02 엘지이노텍 주식회사 Light emitting device
KR102162438B1 (en) * 2014-07-23 2020-10-07 엘지이노텍 주식회사 Light emitting device
US10230021B2 (en) 2015-09-30 2019-03-12 Samsung Electronics Co., Ltd. Light emitting device package
US10629782B2 (en) 2015-09-30 2020-04-21 Samsung Electronics Co., Ltd. Light emitting device package
US10903397B2 (en) 2015-09-30 2021-01-26 Samsung Electronics Co., Ltd. Light emitting device package
WO2017146493A1 (en) * 2016-02-23 2017-08-31 엘지이노텍 주식회사 Light-emitting element package and display device having same
US10622338B2 (en) 2016-02-23 2020-04-14 Lg Innotek Co., Ltd. Light-emitting element package and display device having same
US9905543B2 (en) 2016-02-26 2018-02-27 Samsung Electronics Co., Ltd. Light-emitting diode (LED) device
US10153260B2 (en) 2016-02-26 2018-12-11 Samsung Electronics, Co., Ltd. Light-emitting diode (LED) device
US10497683B2 (en) 2016-02-26 2019-12-03 Samsung Electronics Co., Ltd. Light-emitting diode (LED) device
US10770436B2 (en) 2016-02-26 2020-09-08 Samsung Electronics Co., Ltd. Light-emitting diode (LED) device
WO2022203099A1 (en) * 2021-03-25 2022-09-29 엘지전자 주식회사 Light emitting device package and display device

Similar Documents

Publication Publication Date Title
US8519426B2 (en) Light emitting device and lighting system having the same
TWI606618B (en) Light emitting device
JP5999929B2 (en) Light emitting device package and lighting system using the same
US8525213B2 (en) Light emitting device having multiple cavities and light unit having the same
US8519427B2 (en) Light emitting device and lighting system
US8362459B2 (en) Light emitting device, light emitting device package, and lighting system
JP5762786B2 (en) Light emitting device, light emitting device package
TWI545802B (en) Light emitting apparatus and method of manufacturing the same
CN112136219B (en) Lighting module
US20110309405A1 (en) Light emitting device and lighting system having the same
JP2011216891A (en) Light-emitting device package and lighting system
US20130049038A1 (en) Light emitting device and light emitting device package
US9048395B2 (en) Light emitting device package, lighting module and lighting system
KR101039974B1 (en) Light emitting device, method for fabricating the same, and light emitting device package
US8587016B2 (en) Light emitting device package having light emitting device on inclined side surface and lighting system including the same
KR102023089B1 (en) Light emitting device, light emitting device package, and light unit
KR101865942B1 (en) Light emitting device, light emitting device package, and light unit
KR20130137820A (en) Light emitting device, light emitting device package, and light unit
KR20130088555A (en) Light emitting device package
KR20110115320A (en) Light emitting device package, method for fabricating the same and lighting system including the same
KR101929894B1 (en) Light emitting device, light emitting device package, and method of manufacturing the same
KR101766717B1 (en) Light Emitting Device Package
KR20130114302A (en) Light emitting device, light emitting device package, and light unit
KR20130114301A (en) Light emitting device, light emitting device package, and light unit
KR20130060638A (en) Light emitting device, package including the same, and lighting system including the same

Legal Events

Date Code Title Description
A201 Request for examination
A302 Request for accelerated examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20140423

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20150506

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20160504

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20170512

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20180509

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20190514

Year of fee payment: 9