JP2007109946A - Phosphor plate and light-emitting device provided with the same - Google Patents

Phosphor plate and light-emitting device provided with the same Download PDF

Info

Publication number
JP2007109946A
JP2007109946A JP2005300313A JP2005300313A JP2007109946A JP 2007109946 A JP2007109946 A JP 2007109946A JP 2005300313 A JP2005300313 A JP 2005300313A JP 2005300313 A JP2005300313 A JP 2005300313A JP 2007109946 A JP2007109946 A JP 2007109946A
Authority
JP
Japan
Prior art keywords
light
phosphor plate
phosphor
light emitting
led element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005300313A
Other languages
Japanese (ja)
Other versions
JP2007109946A5 (en
Inventor
Toshimasa Hayashi
稔真 林
Hiroaki Kawaguchi
洋明 川口
Takumi Narita
巧 成田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2005300313A priority Critical patent/JP2007109946A/en
Publication of JP2007109946A publication Critical patent/JP2007109946A/en
Publication of JP2007109946A5 publication Critical patent/JP2007109946A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a phosphor plate capable of improving optical extraction efficiency by facilitating emission of a light from an LED element which is incident into a plate member contained in a phosphor plate, from a light emitting surface of the element, and to provide a light-emitting device provided with the same. <P>SOLUTION: A plate member for wavelength conversion contains a phosphor arranged on a light extracting side of the LED element 3 and receiving a light to be emitted from the LED element 3 and excited to emit a wavelength conversion light. In this plate member, a light extracting side surface 9A of the plate member is formed of an uneven surface, and a light-emitting element side surface 9B is made of a flat surface. This configuration can suppress repetition of reflection of a light from the LED element 3 which is incident into the phosphor plate 9 and return thereof to the LED element side. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、発光素子から発せられる光を受けて励起されることにより波長変換光を発する蛍光体板及びこれを備えた発光装置に関する。   The present invention relates to a phosphor plate that emits wavelength-converted light when excited by receiving light emitted from a light-emitting element, and a light-emitting device including the phosphor plate.

周知のように、単一の発光ダイオード(Light Emitting Diode:LED)素子から発せられる光と、この光で蛍光体が励起されて発する波長変換光との混合により白色光を得ることができる発光装置が実用化されている。   As is well known, a light emitting device capable of obtaining white light by mixing light emitted from a single light emitting diode (LED) element and wavelength converted light emitted by exciting a phosphor with this light. Has been put to practical use.

一般に、この種の発光装置には、光取出側に開口するケースを有するパッケージと、ケース内に収容されたLED素子と、LED素子をケース内で封止する蛍光体含有の封止部材とを備えたものが知られている。   Generally, this type of light emitting device includes a package having a case that opens to the light extraction side, an LED element housed in the case, and a phosphor-containing sealing member that seals the LED element in the case. What you have is known.

このような発光装置においては、LED素子として青色光を発する青色LED素子であり、また蛍光体として青色光で励起されて黄色光を発する蛍光体であると、LED素子から発せられる青色の励起光と蛍光体から発せられる黄色の波長変換光との混合により白色光が得られる。   In such a light emitting device, a blue LED element that emits blue light as an LED element, and a phosphor that is excited by blue light and emits yellow light as a phosphor, emits blue excitation light emitted from the LED element. Is mixed with yellow wavelength-converted light emitted from the phosphor to obtain white light.

しかし、このような発光装置においては、LED素子から様々な方向に発せられる各光の行路長が蛍光体含有の封止部材内で一定でなく、このため色むらが生じるという不都合がある。   However, in such a light-emitting device, the path length of each light emitted from the LED element in various directions is not constant in the phosphor-containing sealing member, and there is a disadvantage in that color unevenness occurs.

そこで、上述した不都合を回避するために、蛍光体板の厚さを一定の寸法に設定し、各光の行路長を蛍光体板内で一定の寸法に近づけて色むらを改善することができる発光装置が従来から提案されている(例えば特許文献1及び2参照)。   Therefore, in order to avoid the inconvenience described above, the thickness of the phosphor plate can be set to a constant dimension, and the path length of each light can be brought close to a certain dimension within the phosphor plate to improve color unevenness. Conventionally, light emitting devices have been proposed (see, for example, Patent Documents 1 and 2).

これら発光装置は、光取出側に開口するケース内に封止部材を充填してなるパッケージと、このパッケージのケース内で封止部材によって封止されたLED素子と、このLED素子の光取出側で封止部材の光出射面を覆う蛍光体板とを備えている。
特開2001−345482号公報 特開2005−191197号公報
These light emitting devices include a package in which a sealing member is filled in a case that opens to the light extraction side, an LED element that is sealed by the sealing member in the case of the package, and a light extraction side of the LED element And a phosphor plate covering the light emitting surface of the sealing member.
JP 2001-345482 A JP 2005-191197 A

しかしながら、特許文献1によると、蛍光体板の光入射面及び光出射面が共に平面で形成されているため、蛍光体板内に入射したLED素子からの光の一部が蛍光体板内で反射を繰り返す。また、特許文献2によると、蛍光体板の光入射面が凹凸面で形成されているため、蛍光体板内に入射したLED素子からの光の一部がLED素子側に戻り易くなる。この結果、特許文献1,2に示す発光装置においては、LED素子から発せられる光の一部が蛍光体板の光出射面から出射されず、光取出効率が低下するという問題があった。   However, according to Patent Document 1, since both the light incident surface and the light emitting surface of the phosphor plate are formed to be flat, a part of the light from the LED element incident on the phosphor plate is within the phosphor plate. Repeat reflection. According to Patent Document 2, since the light incident surface of the phosphor plate is formed as an uneven surface, a part of the light from the LED element incident on the phosphor plate is easily returned to the LED element side. As a result, the light emitting devices shown in Patent Documents 1 and 2 have a problem that a part of the light emitted from the LED elements is not emitted from the light emitting surface of the phosphor plate, and the light extraction efficiency is lowered.

従って、本発明の目的は、蛍光体含有の板部材内に入射したLED素子からの光をその光出射面から出射し易くし、もって光取出効率を高めることができる蛍光体板及びこれを備えた発光装置を提供することにある。   Accordingly, an object of the present invention is to provide a phosphor plate that can easily emit light from an LED element that has entered the phosphor-containing plate member from its light exit surface, thereby improving the light extraction efficiency, and the phosphor plate. Another object is to provide a light emitting device.

(1)本発明は、上記目的を達成するために、発光素子の光取出側に配設され、前記発光素子から発せられる光を受けて励起されることにより波長変換光を発する蛍光体を含有する波長変換用の板部材であって、前記板部材の光取出側面は凹凸面で形成され、その素子側面は平面で形成されていることを特徴とする蛍光体板を提供する。 (1) In order to achieve the above object, the present invention includes a phosphor that is disposed on the light extraction side of a light emitting element and emits wavelength-converted light when excited by receiving light emitted from the light emitting element. There is provided a phosphor plate, characterized in that the plate member for wavelength conversion, wherein the light extraction side surface of the plate member is formed as an uneven surface and the side surface of the element is formed as a flat surface.

(2)本発明は、上記目的を達成するために、光取出側に開口する内部空間を有するケースと、前記ケースの光取出側に配設された蛍光体板と、前記蛍光体板の光反取出側に配設され、かつ前記ケース内に収容された発光素子とを備えた発光装置において、前記蛍光体板は、上記(1)に記載の蛍光体板であることを特徴とする発光装置を提供する。 (2) In order to achieve the above object, the present invention provides a case having an internal space that opens to the light extraction side, a phosphor plate disposed on the light extraction side of the case, and light from the phosphor plate. A light-emitting device provided with a light-emitting element disposed on the opposite side and housed in the case, wherein the phosphor plate is the phosphor plate described in (1) above. Providing equipment.

本発明によると、蛍光体含有の板部材内に入射したLED素子からの光をその光出射面から出射し易くし、光取出効率を高めることができる。   According to the present invention, it is possible to easily emit the light from the LED element that has entered the phosphor-containing plate member from the light exit surface, thereby increasing the light extraction efficiency.

[実施の形態]
図1は、本発明の実施の形態に係る蛍光体板を備えた発光装置を説明するために示す断面図である。図2は、本発明の実施の形態に係る蛍光体板を説明するために示す図である。図2(a)は断面図であり、図2(b)は平面図である。
[Embodiment]
FIG. 1 is a cross-sectional view for explaining a light emitting device provided with a phosphor plate according to an embodiment of the present invention. FIG. 2 is a view for explaining the phosphor plate according to the embodiment of the present invention. 2A is a cross-sectional view, and FIG. 2B is a plan view.

〔発光装置1の全体構成〕
図1において、発光装置1は、素子収容用のパッケージ2と、このパッケージ2内に収容されたLED素子3と、パッケージ2内に充填されてLED素子3を封止する封止部材8と、LED素子3の光取出側に封止部材8を覆うように配置された蛍光体板9とから大略構成されている。
[Overall configuration of light-emitting device 1]
In FIG. 1, a light emitting device 1 includes an element housing package 2, an LED element 3 housed in the package 2, a sealing member 8 that fills the package 2 and seals the LED element 3, The phosphor plate 9 is generally configured to cover the sealing member 8 on the light extraction side of the LED element 3.

(パッケージ2の構成)
パッケージ2は、図1に示すように、LED素子3を収容可能なケース5と、ケース5の一方側(図1では下側)開口部を覆う素子搭載基板6とを有している。
(Configuration of package 2)
As shown in FIG. 1, the package 2 includes a case 5 that can accommodate the LED element 3 and an element mounting substrate 6 that covers an opening on one side (lower side in FIG. 1) of the case 5.

<ケース5の構成>
ケース5は、図1に示すように、基板側から光取出側に向かって開口する平面円形状の内部空間5Aを有し、全体が例えばアルミナ(Al23)等のセラミックス材料からなる箱体によって形成されている。ケース5の材料としては、Al23の他にシリコン(Si)や窒化アルミニウム(AlN)あるいは白色樹脂が用いられる。ケース5内には、LED素子3からの光を光取出側に反射するための傾斜面5aが設けられている。内部空間5Aの光取出側には、蛍光体板9を取り付けるための段状面5bが設けられている。内部空間5Aには封止部材8が充填されている。
<Configuration of Case 5>
As shown in FIG. 1, the case 5 has a planar circular internal space 5A that opens from the substrate side toward the light extraction side, and the box 5 is entirely made of a ceramic material such as alumina (Al 2 O 3 ). Formed by the body. As a material of the case 5, silicon (Si), aluminum nitride (AlN), or white resin is used in addition to Al 2 O 3 . In the case 5, an inclined surface 5a for reflecting light from the LED element 3 to the light extraction side is provided. A stepped surface 5b for attaching the phosphor plate 9 is provided on the light extraction side of the internal space 5A. A sealing member 8 is filled in the internal space 5A.

<素子搭載基板6の構成>
素子搭載基板6はAl23のセラミックス材料によって形成されている。素子搭載基板6の材料としては、Al23の他に、SiやAlNあるいは白色樹脂が用いられる。素子搭載基板6の光取出側面(表面)には、LED素子3のp側電極及びn側電極(共に図示せず)にそれぞれ金(Au)からなるボンディングワイヤ12,13を介して接続する第1配線パターン14,15が設けられている。素子搭載基板6の実装側面(裏面)には、LED素子3に対して電源電圧を供給するための第2配線パターン16,17が設けられている。そして、第1配線パターン14と第2配線パターン16と及び第1配線パターン15と第2配線パターン17とは、それぞれ素子搭載基板6を貫通するビアホール19,20内に充填されたビアパターン22,23により電気的に接続されている。第1配線パターン14,15及び第2配線パターン16,17は、例えばタングステン(W),モリブデン(Mo)等の高融点金属によりビアパターン22,23と一体的に形成されている。
<Configuration of element mounting substrate 6>
The element mounting substrate 6 is made of an Al 2 O 3 ceramic material. As a material for the element mounting substrate 6, Si, AlN, or white resin is used in addition to Al 2 O 3 . A light extraction side surface (front surface) of the element mounting substrate 6 is connected to a p-side electrode and an n-side electrode (both not shown) of the LED element 3 via bonding wires 12 and 13 made of gold (Au), respectively. One wiring pattern 14, 15 is provided. Second wiring patterns 16 and 17 for supplying a power supply voltage to the LED element 3 are provided on the mounting side surface (back surface) of the element mounting substrate 6. The first wiring pattern 14 and the second wiring pattern 16, and the first wiring pattern 15 and the second wiring pattern 17 are respectively filled in via holes 19 and 20 penetrating the element mounting substrate 6, 23 is electrically connected. The first wiring patterns 14 and 15 and the second wiring patterns 16 and 17 are integrally formed with the via patterns 22 and 23 using a high melting point metal such as tungsten (W) or molybdenum (Mo).

なお、第1配線パターン14,15及び第2配線パターン16,17の表面には、ニッケル(Ni),アルミニウム(Al),白金(Pt),チタン(Ti),Au,銀(Ag),銅(Cu)など単層又は積層あるいは半田材料による金属層が必要に応じて形成される。   Note that nickel (Ni), aluminum (Al), platinum (Pt), titanium (Ti), Au, silver (Ag), copper are formed on the surfaces of the first wiring patterns 14 and 15 and the second wiring patterns 16 and 17. A single layer such as (Cu) or a laminated or metal layer made of a solder material is formed as necessary.

(封止部材8の構成)
封止部材8は、シリコーン等の光透過性樹脂材料からなり、素子搭載基板6と蛍光体板9との間に配置され、ケース5内でLED素子3を封止するように構成されている。封止部材8の材料としては、シリコーンの他に、エポキシ等の樹脂材料やN2,Ar等の不活性ガスが用いられる。
(Configuration of sealing member 8)
The sealing member 8 is made of a light transmissive resin material such as silicone, and is arranged between the element mounting substrate 6 and the phosphor plate 9 and configured to seal the LED element 3 in the case 5. . As a material of the sealing member 8, in addition to silicone, a resin material such as epoxy or an inert gas such as N 2 or Ar is used.

(LED素子3の構成)
LED素子3は、p側電極及びn側電極を有するフェイスアップ型の青色LED素子からなり、図1に示すように、パッケージ2内の封止部材8によって封止され、かつ素子搭載基板6上に接着剤100によって搭載されている。LED素子3は、サファイア(Al23)基板上にAlNからなるバッファ層及びn型半導体(n−GaN)層・発光層・p型半導体(p−GaN)層を順次結晶成長させることにより形成されている。LED素子3の平面縦横寸法は、例えば縦寸法及び横寸法をそれぞれ約1mmとする平面サイズに設定されている。
(Configuration of LED element 3)
The LED element 3 is composed of a face-up type blue LED element having a p-side electrode and an n-side electrode, and is sealed by a sealing member 8 in the package 2 as shown in FIG. Is mounted with an adhesive 100. The LED element 3 is formed by sequentially growing a buffer layer made of AlN and an n-type semiconductor (n-GaN) layer, a light emitting layer, and a p-type semiconductor (p-GaN) layer on a sapphire (Al 2 O 3 ) substrate. Is formed. The planar vertical and horizontal dimensions of the LED element 3 are set to a planar size in which the vertical dimension and the horizontal dimension are about 1 mm, for example.

(蛍光体板9の構成)
蛍光体板9は、ケース5の内部空間5Aに収容され、かつ段状面5bに取り付けられている。そして、LED素子3からの光(青色光)を受けて励起されることにより、波長変換光(黄色光)を発するYAG(YttriumAluminum Garnet)等の蛍光体を含有するシリコーン等の光透過性樹脂からなる平面円形状の薄板部材によって形成されている。蛍光体板9の厚さは均一な寸法に設定されている。これにより、LED素子3から発せられる各光の行路長を蛍光体板9内において一定の寸法に近づけ、蛍光体板9から出射される光の色むらの発生が抑制される。蛍光体板9の光取出側面(光出射面)9Aは図2(a)に示すように例えばエッチングによって断面矩形状の凹凸部を有する凹凸面で形成され、その素子側面(光入射面)9Bは図2(a)に示すように平面で形成されている。これにより、蛍光体板9内に入射したLED素子3からの光の蛍光体板9内における反射の繰り返し及びLED素子側への戻りが抑制される。蛍光体板9の平面パターンは、図2(b)に示すように、所定の間隔をもって並列する複数の直線凹部(凹溝)からなる平面パターンによって形成されている。
(Configuration of phosphor plate 9)
The phosphor plate 9 is accommodated in the internal space 5A of the case 5 and attached to the stepped surface 5b. And from light transmitting resin such as silicone containing phosphor such as YAG (Yttrium Aluminum Garnet) that emits wavelength-converted light (yellow light) by receiving light (blue light) from LED element 3 and being excited. The planar circular thin plate member is formed. The thickness of the phosphor plate 9 is set to a uniform dimension. Thereby, the path length of each light emitted from the LED element 3 is brought close to a certain dimension in the phosphor plate 9, and the occurrence of uneven color of the light emitted from the phosphor plate 9 is suppressed. As shown in FIG. 2A, the light extraction side surface (light emission surface) 9A of the phosphor plate 9 is formed as an uneven surface having an uneven portion with a rectangular cross section by etching, for example, and its element side surface (light incident surface) 9B. Is formed in a plane as shown in FIG. Thereby, the repetition of the reflection in the fluorescent substance plate 9 of the light from the LED element 3 which entered into the fluorescent substance plate 9, and the return to the LED element side are suppressed. As shown in FIG. 2B, the planar pattern of the phosphor plate 9 is formed by a planar pattern composed of a plurality of linear recesses (concave grooves) arranged in parallel at a predetermined interval.

〔発光装置1の動作〕
LED素子3に電源から第2配線パターン16,17及びビアパターン22,23・第1配線パターン14,15・ボンディングワイヤ12,13を介して電圧が印加されると、LED素子3の発光層において青色光を発し、この青色光がLED素子3の光取出面から封止部材8に出射される。
[Operation of Light Emitting Device 1]
When a voltage is applied to the LED element 3 from the power source through the second wiring patterns 16 and 17 and the via patterns 22 and 23, the first wiring patterns 14 and 15, and the bonding wires 12 and 13, in the light emitting layer of the LED element 3 Blue light is emitted, and this blue light is emitted from the light extraction surface of the LED element 3 to the sealing member 8.

次に、LED素子3からの出射光が封止部材8を透過して蛍光体板9に入射する。この場合、LED素子3からの出射光の一部が封止部材8を透過し、またケース5の傾斜面5aで反射してから封止部材8を透過し、それぞれ蛍光体板9に入射する。   Next, the emitted light from the LED element 3 passes through the sealing member 8 and enters the phosphor plate 9. In this case, part of the light emitted from the LED element 3 is transmitted through the sealing member 8, reflected by the inclined surface 5 a of the case 5, then transmitted through the sealing member 8, and is incident on the phosphor plate 9. .

そして、蛍光体板9では入射した青色光を受けて励起されることにより黄色の波長変換光を発する。このため、LED素子3から発せられる青色の励起光と蛍光体板9から発せられる黄色の波長変換光とが混合して白色光となる。   The phosphor plate 9 emits yellow wavelength-converted light when excited by receiving the incident blue light. For this reason, the blue excitation light emitted from the LED element 3 and the yellow wavelength converted light emitted from the phosphor plate 9 are mixed to form white light.

この後、白色光が蛍光体板9を透過し、光出射面9Aから出射される。この場合、蛍光体板9の光出射面9Aが凹凸面であるため、蛍光体板9の光出射面9Aと空気層との界面で白色光が拡散して蛍光体板9から出射され易くなる。また、蛍光体板9の光入射面9Bが平面であるため、蛍光体板9の光出射面9Aと空気層との界面で反射した白色光の一部が蛍光体板9の光入射面9Bと封止部材8の光出射面との界面に入射すると、この界面で反射し易くなる。   Thereafter, white light passes through the phosphor plate 9 and is emitted from the light exit surface 9A. In this case, since the light emission surface 9A of the phosphor plate 9 is an uneven surface, white light is easily diffused and emitted from the phosphor plate 9 at the interface between the light emission surface 9A of the phosphor plate 9 and the air layer. . Further, since the light incident surface 9B of the phosphor plate 9 is flat, a part of the white light reflected at the interface between the light emitting surface 9A of the phosphor plate 9 and the air layer is the light incident surface 9B of the phosphor plate 9. Is incident on the interface between the sealing member 8 and the light exit surface of the sealing member 8, the light is easily reflected at this interface.

[実施の形態の効果]
以上説明した実施の形態によれば、次に示す効果が得られる。
[Effect of the embodiment]
According to the embodiment described above, the following effects can be obtained.

蛍光体板9内に入射したLED素子3からの光の蛍光体板9内における反射の繰り返し及びLED素子側への戻りが抑制される。このため、蛍光体板9内に入射したLED素子3からの光がその光出射面9Aから出射され易くなり、光取出効率を高めることができる。   Repeated reflection of light from the LED element 3 incident on the phosphor plate 9 in the phosphor plate 9 and return to the LED element side are suppressed. For this reason, the light from the LED element 3 entering the phosphor plate 9 is easily emitted from the light exit surface 9A, and the light extraction efficiency can be increased.

以上、本発明の発光装置を上記の実施の形態に基づいて説明したが、本発明は上記の実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々の態様において実施することが可能であり、例えば次に示すような変形も可能である。   As mentioned above, although the light-emitting device of this invention was demonstrated based on said embodiment, this invention is not limited to said embodiment, It implements in a various aspect in the range which does not deviate from the summary. For example, the following modifications are possible.

(1)本実施の形態では、蛍光体板9が蛍光体含有のシリコーン等の光透過性樹脂材料からなる場合について説明したが、本発明はこれに限定されず、蛍光体含有の無機ガラスからなるもの、あるいは蛍光体含有の有機・無機ハイブリッド材料からなるものでもよい。 (1) In the present embodiment, the case where the phosphor plate 9 is made of a light-transmitting resin material such as phosphor-containing silicone has been described. However, the present invention is not limited to this, and the phosphor plate-containing inorganic glass is used. Or a phosphor-containing organic / inorganic hybrid material.

(2)本実施の形態では、蛍光体板9の光出射面9Aが断面矩形状の凹凸部を有する凹凸面である場合について説明したが、本発明はこれに限定されず、図3(a)に示すような断面V字状又は図3(b)に示すような断面半円状の凹部を有する凹凸面であってもよい。 (2) In the present embodiment, the case where the light emission surface 9A of the phosphor plate 9 is an uneven surface having an uneven portion with a rectangular cross section has been described, but the present invention is not limited to this, and FIG. Or a concave-convex surface having a concave portion with a semicircular cross section as shown in FIG. 3B.

(3)本実施の形態では、蛍光体板9の平面パターンが、所定の間隔をもって並列する複数の直線凹部(凹溝)からなる平面パターンである場合について説明したが、本発明はこれに限定されず、図4(a)に示すように格子状の凹部(又は凸部)を、図4(b)に示すように円形状の凹部(又は凸部)を、図4(c)に示すように三角形状の凹部(又は凸部)を、図4(d)に示すように四角形状の凹部(又は凸部)を、図4(e)に示すように同心状に複数の環状凹部(又は環状凸部)をそれぞれもつ平面パターンであってもよい。この場合、各平面パターンの凹部(又は凸部)は、光拡散が良好に行われるような位置に配列されていることが好ましい。 (3) In the present embodiment, the case where the planar pattern of the phosphor plate 9 is a planar pattern composed of a plurality of linear recesses (concave grooves) arranged in parallel at a predetermined interval has been described, but the present invention is limited to this. FIG. 4 (c) shows a lattice-shaped recess (or projection) as shown in FIG. 4 (a) and a circular recess (or projection) as shown in FIG. 4 (b). As shown in FIG. 4 (d), the triangular concave portion (or convex portion) is formed into a quadrangular concave portion (or convex portion) as shown in FIG. Alternatively, it may be a planar pattern having annular protrusions). In this case, the concave portions (or convex portions) of the respective planar patterns are preferably arranged at positions where light diffusion is favorably performed.

(4)本実施の形態では、蛍光体板9の凹凸面がエッチングによって形成されている場合について説明したが、本発明はこれに限定されず、型成形やダイサーを用いた切削加工によって凹凸面を形成してもよい。 (4) In the present embodiment, the case where the concavo-convex surface of the phosphor plate 9 is formed by etching has been described. However, the present invention is not limited to this, and the concavo-convex surface can be obtained by cutting using a mold or a dicer. May be formed.

(5)本実施の形態では、LED素子3から発せられる光(青色光)を受けて励起されることにより黄色の波長変換光を発する蛍光体板9である場合について説明したが、本発明はこれに限定されず、LED素子から発せられる紫色光(波長370〜390nm)を受けて励起されることにより白色の波長変換光を発する蛍光体板であってもよい。 (5) In the present embodiment, the case where the phosphor plate 9 emits yellow wavelength-converted light by being excited by receiving light (blue light) emitted from the LED element 3 has been described. It is not limited to this, The phosphor plate which emits white wavelength conversion light by receiving the violet light (wavelength 370-390 nm) emitted from an LED element and exciting it may be sufficient.

(6)本実施の形態では、フェイスアップ型のLED素子3を用いたが、フェイスダウン型のLED素子3を用いてもよい。この場合、LED素子3は第1配線パターン14,15にフリップチップ接続される。 (6) Although the face-up type LED element 3 is used in the present embodiment, the face-down type LED element 3 may be used. In this case, the LED element 3 is flip-chip connected to the first wiring patterns 14 and 15.

本発明の実施の形態に係る蛍光体板を備えた発光装置を説明するために示す断面図。Sectional drawing shown in order to demonstrate the light-emitting device provided with the fluorescent substance plate which concerns on embodiment of this invention. (a)及び(b)は、本発明の実施の形態に係る蛍光体板を説明するために示す断面図と平面図。(A) And (b) is sectional drawing and a top view shown in order to demonstrate the fluorescent substance plate which concerns on embodiment of this invention. (a)及び(b)は、本発明の実施の形態に係る蛍光体板における断面構造の変形例を説明するために示す断面図。(A) And (b) is sectional drawing shown in order to demonstrate the modification of the cross-section in the fluorescent substance plate which concerns on embodiment of this invention. (a)〜(e)は、本発明の実施の形態に係る蛍光体板における平面パターンの変形例を説明するために示す平面図。(A)-(e) is a top view shown in order to demonstrate the modification of the plane pattern in the fluorescent substance plate which concerns on embodiment of this invention.

符号の説明Explanation of symbols

1…発光装置、2…パッケージ、3…LED素子、5…ケース、5A…内部空間、5a…傾斜面、5b…段状面、6…素子搭載基板、8…封止部材、9…蛍光体板、9A…光出射面、9B…光入射面、12,13…ボンディングワイヤ、14,15…第1配線パターン、16,17…第2配線パターン、19,20…ビアホール、22,23…ビアパターン DESCRIPTION OF SYMBOLS 1 ... Light-emitting device, 2 ... Package, 3 ... LED element, 5 ... Case, 5A ... Internal space, 5a ... Inclined surface, 5b ... Stepped surface, 6 ... Element mounting substrate, 8 ... Sealing member, 9 ... Phosphor Plate, 9A ... Light exit surface, 9B ... Light incident surface, 12, 13 ... Bonding wire, 14, 15 ... First wiring pattern, 16, 17 ... Second wiring pattern, 19, 20 ... Via hole, 22, 23 ... Via pattern

Claims (6)

発光素子の光取出側に配設され、前記発光素子から発せられる光を受けて励起されることにより波長変換光を発する蛍光体を含有する波長変換用の板部材であって、
前記板部材の光取出側面は凹凸面で形成され、発光素子側面は平面で形成されていることを特徴とする蛍光体板。
A plate member for wavelength conversion containing a phosphor that is disposed on the light extraction side of the light emitting element and emits wavelength converted light by being excited by receiving light emitted from the light emitting element,
The phosphor plate, wherein the light extraction side surface of the plate member is formed as an uneven surface, and the light emitting element side surface is formed as a flat surface.
前記発光素子は発光ダイオード素子からなる請求項1に記載の蛍光体板。   The phosphor plate according to claim 1, wherein the light emitting element is a light emitting diode element. 前記蛍光体は、前記板部材の光出射面から白色光を出射するための蛍光体である請求項1又は2に記載の蛍光体板。   The phosphor plate according to claim 1, wherein the phosphor is a phosphor for emitting white light from a light emitting surface of the plate member. 光取出側に開口する内部空間を有するケースと、
前記ケースの光取出側に配設された蛍光体板と、
前記蛍光体板の光反取出側に配設され、かつ前記ケース内に収容された発光素子とを備えた発光装置において、
前記蛍光体板は、請求項1乃至3のいずれかに記載の蛍光体板であることを特徴とする発光装置。
A case having an internal space opening on the light extraction side;
A phosphor plate disposed on the light extraction side of the case;
In a light emitting device provided with a light emitting element disposed on the light extraction side of the phosphor plate and housed in the case,
4. The light emitting device according to claim 1, wherein the phosphor plate is the phosphor plate according to claim 1.
前記ケース内には、前記蛍光体板の素子側で前記発光素子を封止する光透過性部材からなる封止部材が充填されている請求項4に記載の発光装置。   The light emitting device according to claim 4, wherein the case is filled with a sealing member made of a light transmissive member that seals the light emitting element on the element side of the phosphor plate. 前記ケースの内面部には、前記発光素子から発せられる光を光取出側に反射するための傾斜面が設けられている請求項4又は5に記載の発光装置。   The light emitting device according to claim 4, wherein an inclined surface for reflecting light emitted from the light emitting element to a light extraction side is provided on an inner surface portion of the case.
JP2005300313A 2005-10-14 2005-10-14 Phosphor plate and light-emitting device provided with the same Withdrawn JP2007109946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005300313A JP2007109946A (en) 2005-10-14 2005-10-14 Phosphor plate and light-emitting device provided with the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005300313A JP2007109946A (en) 2005-10-14 2005-10-14 Phosphor plate and light-emitting device provided with the same

Publications (2)

Publication Number Publication Date
JP2007109946A true JP2007109946A (en) 2007-04-26
JP2007109946A5 JP2007109946A5 (en) 2008-01-31

Family

ID=38035561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005300313A Withdrawn JP2007109946A (en) 2005-10-14 2005-10-14 Phosphor plate and light-emitting device provided with the same

Country Status (1)

Country Link
JP (1) JP2007109946A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056462A (en) * 2008-08-29 2010-03-11 Kyocera Corp Light-emitting device, and lighting system using light-emitting device
WO2010103840A1 (en) * 2009-03-13 2010-09-16 株式会社小糸製作所 Light-emitting module and lighting unit
JP2012009719A (en) * 2010-06-28 2012-01-12 Kyocera Corp Light emitting device and lighting system
WO2012014360A1 (en) * 2010-07-26 2012-02-02 株式会社小糸製作所 Light-emitting module
WO2012148224A2 (en) * 2011-04-27 2012-11-01 삼성전자 주식회사 Light-emitting-device package and a production method therefor
JP2013545279A (en) * 2010-10-04 2013-12-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Silicone foil manufacturing method, silicone foil, and optoelectronic semiconductor component provided with silicone foil
JP2014056886A (en) * 2012-09-11 2014-03-27 Kyocera Corp Light-emitting device
JP2014116459A (en) * 2012-12-10 2014-06-26 Stanley Electric Co Ltd Semiconductor light-emitting device
JP2014158054A (en) * 2009-07-22 2014-08-28 Philips Lumileds Lightng Co Llc Light emitting diode package and method of manufacturing the same
JP2015015418A (en) * 2013-07-08 2015-01-22 シャープ株式会社 Semiconductor light emitting device
WO2016021971A1 (en) * 2014-08-07 2016-02-11 엘지이노텍 주식회사 Phosphor plate, and illumination device containing same
WO2023248791A1 (en) * 2022-06-20 2023-12-28 スタンレー電気株式会社 Wavelength conversion device and lighting device

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056462A (en) * 2008-08-29 2010-03-11 Kyocera Corp Light-emitting device, and lighting system using light-emitting device
WO2010103840A1 (en) * 2009-03-13 2010-09-16 株式会社小糸製作所 Light-emitting module and lighting unit
JPWO2010103840A1 (en) * 2009-03-13 2012-09-13 株式会社小糸製作所 Light emitting module and lamp unit
JP2014158054A (en) * 2009-07-22 2014-08-28 Philips Lumileds Lightng Co Llc Light emitting diode package and method of manufacturing the same
JP2012009719A (en) * 2010-06-28 2012-01-12 Kyocera Corp Light emitting device and lighting system
US8704261B2 (en) 2010-07-26 2014-04-22 Koito Manufacturing Co., Ltd. Light emitting module
WO2012014360A1 (en) * 2010-07-26 2012-02-02 株式会社小糸製作所 Light-emitting module
WO2012014439A1 (en) * 2010-07-26 2012-02-02 株式会社小糸製作所 Light-emitting module
CN103026515A (en) * 2010-07-26 2013-04-03 株式会社小糸制作所 Light-emitting module
JPWO2012014439A1 (en) * 2010-07-26 2013-09-12 株式会社小糸製作所 Light emitting module
JP2013545279A (en) * 2010-10-04 2013-12-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Silicone foil manufacturing method, silicone foil, and optoelectronic semiconductor component provided with silicone foil
WO2012148224A2 (en) * 2011-04-27 2012-11-01 삼성전자 주식회사 Light-emitting-device package and a production method therefor
WO2012148224A3 (en) * 2011-04-27 2013-01-10 삼성전자 주식회사 Light-emitting-device package and a production method therefor
JP2014056886A (en) * 2012-09-11 2014-03-27 Kyocera Corp Light-emitting device
JP2014116459A (en) * 2012-12-10 2014-06-26 Stanley Electric Co Ltd Semiconductor light-emitting device
JP2015015418A (en) * 2013-07-08 2015-01-22 シャープ株式会社 Semiconductor light emitting device
WO2016021971A1 (en) * 2014-08-07 2016-02-11 엘지이노텍 주식회사 Phosphor plate, and illumination device containing same
KR20160017948A (en) * 2014-08-07 2016-02-17 엘지이노텍 주식회사 Phosphor plate and lighting device including the same
CN106574764A (en) * 2014-08-07 2017-04-19 Lg 伊诺特有限公司 Phosphor plate, and illumination device containing same
EP3179160A4 (en) * 2014-08-07 2018-03-14 LG Innotek Co., Ltd. Phosphor plate, and illumination device containing same
US10451245B2 (en) 2014-08-07 2019-10-22 Lg Innotek Co., Ltd. Phosphor plate and lighting device including the same
CN106574764B (en) * 2014-08-07 2019-11-05 Lg 伊诺特有限公司 Phosphor plate and lighting device comprising the phosphor plate
KR102310805B1 (en) * 2014-08-07 2021-10-08 엘지이노텍 주식회사 Phosphor plate and lighting device including the same
WO2023248791A1 (en) * 2022-06-20 2023-12-28 スタンレー電気株式会社 Wavelength conversion device and lighting device

Similar Documents

Publication Publication Date Title
JP2007109946A (en) Phosphor plate and light-emitting device provided with the same
US20070120463A1 (en) Phosphor plate and light emitting device having same
JP2007109947A (en) Phosphor plate and light-emitting device provided with the same
JP4254266B2 (en) LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MANUFACTURING METHOD
TWI543399B (en) Semiconductor light emitting device
EP2657967B1 (en) Light emitting module
JP2007134656A (en) Fluorescent board and light emitting device having it
JP2007035802A (en) Light-emitting device
JP2007335798A (en) Light-emitting device
JP4353196B2 (en) Light emitting device
JP2007123437A (en) Phosphor plate and light emitting device with same
JP2015032621A (en) Semiconductor light-emitting device, and method of manufacturing the same
JP2007012993A (en) Chip semiconductor light emitting device
JP2007109948A (en) Light-emitting device and manufacturing method thereof
JP2009272576A (en) Semiconductor light-emitting device
JP2007042687A (en) Light emitting diode device
JP4894354B2 (en) Light emitting device
US8669698B2 (en) Wavelength converter and semiconductor light emitting device
JP5837456B2 (en) Semiconductor light emitting device and light emitting module
JP2008258438A (en) Semiconductor light emitting device
JP2007243056A (en) Light emitting device
JP2004207519A (en) Light emitting device
JP2007200949A (en) Phosphor plate, and light emitting device equipped therewith
JP2007324204A (en) Light emitting device
US20060006793A1 (en) Deep ultraviolet used to produce white light

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071211

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071221

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20090625