JP2013026590A - Light-emitting device manufacturing method - Google Patents

Light-emitting device manufacturing method Download PDF

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JP2013026590A
JP2013026590A JP2011162847A JP2011162847A JP2013026590A JP 2013026590 A JP2013026590 A JP 2013026590A JP 2011162847 A JP2011162847 A JP 2011162847A JP 2011162847 A JP2011162847 A JP 2011162847A JP 2013026590 A JP2013026590 A JP 2013026590A
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light
phosphor particles
emitting element
mixed liquid
led chip
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Shota Shimonishi
正太 下西
Hiroyuki Tajima
博幸 田嶌
Yosuke Tsuchiya
陽祐 土屋
Akira Sengoku
昌 仙石
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Toyoda Gosei Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device manufacturing method which makes it possible to restrict color irregularities depending on view angles and also to reduce material and manufacturing costs.SOLUTION: A light-emitting element is mounted at the bottom of a recessed part of a case. Next, a mask having an opening corresponding to the light-emitting element mounted part is disposed on the top face of the case, and a mixed liquid consisting of phosphor particles dispersed in a volatile solvent is screen-printed to supply the mixed liquid to the periphery of the light-emitting element. After that, the mixed liquid is heated to evaporate the volatile solvent. Since screen printing is used to apply a coating of the mixed liquid to the light-emitting element mounted part, collective application of the mixed liquid is made possible and manufacturing cost is thereby reduced. Furthermore, since the phosphor is closely contacted with the light-emitting element by evaporating the volatile solvent into which phosphor particles have been mixed, a sufficient wavelength conversion rate can be obtained even when the amount of phosphor particles supplied is reduced, which results in reduced material costs.

Description

本発明は、発光素子と、発光素子からの発光光により励起されて波長変換光を発する蛍光体とを用い、発光光と波長変換光との混合光により、白色光を得る発光装置の製造方法に関するものである。   The present invention relates to a method of manufacturing a light-emitting device that uses a light-emitting element and a phosphor that emits wavelength-converted light when excited by light emitted from the light-emitting element, and obtains white light using mixed light of the emitted light and wavelength-converted light. It is about.

所謂、白色LEDランプは、LEDチップと、LEDチップの発光光により励起されて、LEDチップの発光光より長波長側の波長変換光に変換する蛍光体粒子を用い、これらの混合光により、白色光を得るものである。一般的に、白色LEDランプは、LEDチップを封止する封止材中に蛍光体粒子を含有させることが多い。   A so-called white LED lamp uses an LED chip and phosphor particles that are excited by the light emitted from the LED chip and convert the light emitted from the LED chip into wavelength-converted light having a longer wavelength than the light emitted from the LED chip. Get light. In general, white LED lamps often contain phosphor particles in a sealing material for sealing an LED chip.

このようなLEDランプでは、主に下記の2種類の方法のいずれかにより封止材中に蛍光体粒子を含有させる。   In such an LED lamp, phosphor particles are contained in the encapsulant mainly by one of the following two methods.

1種類目の方法は、図1(a)に示すように、ケース1の凹部にアエロジル等のチキソ性付与剤を含有させた未硬化の封止材6に蛍光体粒子5を均一に混合させて供給した後、硬化させて、封止材6中に蛍光体粒子を均一分散させる方法である(例えば、特許文献1参照。)。   In the first type, as shown in FIG. 1A, phosphor particles 5 are uniformly mixed in an uncured encapsulant 6 containing a thixotropic agent such as aerosil in the recess of case 1. Is supplied and then cured to uniformly disperse the phosphor particles in the sealing material 6 (see, for example, Patent Document 1).

2種類目の方法は、図1(b)に示すように、ケース1の凹部に未硬化の封止材6に蛍光体粒子5を均一に混合させて供給し、封止材6が未硬化の状態又は硬化中に粘度が低下した状態において、蛍光体粒子5をLEDチップ2の周辺に沈降させた後、封止材6を硬化させる方法である(例えば、特許文献2参照。)。   In the second method, as shown in FIG. 1B, the phosphor particles 5 are uniformly mixed and supplied to the recesses of the case 1 in the uncured sealing material 6 so that the sealing material 6 is uncured. In this state or in a state where the viscosity is lowered during curing, the phosphor particles 5 are allowed to settle around the LED chip 2 and then the sealing material 6 is cured (see, for example, Patent Document 2).

1種類目の方法では、LEDチップ2からの発光光が蛍光体粒子5に至るまでに封止材6によりある程度吸収されるため、LEDチップ2から発光された当初の光強度で蛍光体粒子5を励起することができない。そのため、十分な波長変換率を得るためには、封止材6中の蛍光体粒子5の含有量を多くする必要が生じ、材料費が割高になってしまう。
また、LEDチップ2から封止材6の外部に至るまでの光路長が視野角により異なるため、蛍光体粒子5での波長変換確率が異なることに起因して、視野角による色むらが発生していた。
In the first type of method, the emitted light from the LED chip 2 is absorbed to some extent by the sealing material 6 before reaching the phosphor particles 5, so that the phosphor particles 5 with the initial light intensity emitted from the LED chip 2. Can not be excited. Therefore, in order to obtain a sufficient wavelength conversion rate, it is necessary to increase the content of the phosphor particles 5 in the sealing material 6, and the material cost becomes high.
Further, since the optical path length from the LED chip 2 to the outside of the sealing material 6 varies depending on the viewing angle, color unevenness due to the viewing angle occurs due to the different wavelength conversion probabilities in the phosphor particles 5. It was.

一方、2種類目の方法では、LEDチップ2の近傍に蛍光体粒子5が配置されるため、LEDチップ2からの発光光の封止材6での吸収を小さく、強い光強度で蛍光体粒子5が励起される。そのため、封止材6中の蛍光体粒子5の含有量が少なくても、十分な波長変換率が得ることができ、材料費を廉価にすることができる。
しかしながら、蛍光体粒子6を完全に沈降させることは困難であるため、視野角による色むらは依然として発生する。また、蛍光体粒子6の沈降に時間を要するため、製造費が割高になってしまう。更に、複数種の蛍光体粒子6を組み合わせて使用する際、異なる蛍光体粒子6間において比重及び粒径が異なるため、沈降速度も異なる。そのため、蛍光体粒子6の沈降形態の制御が困難であり、色度の制御も困難となる。
On the other hand, in the second type of method, the phosphor particles 5 are arranged in the vicinity of the LED chip 2, so that the absorption of the emitted light from the LED chip 2 by the sealing material 6 is small, and the phosphor particles have high light intensity. 5 is excited. Therefore, even if the content of the phosphor particles 5 in the sealing material 6 is small, a sufficient wavelength conversion rate can be obtained, and the material cost can be reduced.
However, since it is difficult to completely settle the phosphor particles 6, color unevenness due to the viewing angle still occurs. Moreover, since it takes time for the phosphor particles 6 to settle, the manufacturing cost becomes high. Further, when a plurality of types of phosphor particles 6 are used in combination, since the specific gravity and particle size are different between the different phosphor particles 6, the sedimentation speed is also different. For this reason, it is difficult to control the sedimentation mode of the phosphor particles 6, and it is also difficult to control the chromaticity.

蛍光体粒子を沈降させる方法における上記の問題を解決するために、揮発性溶媒に蛍光体粒子を混合させた混合液を作成し、LEDチップの搭載部の周辺にディスペンス又はスプレーコートにより混合液を塗布した後、揮発性溶媒を揮発させて蛍光体粒子を配置させる方法が提案されている(例えば、特許文献3〜6参照。)。   In order to solve the above problems in the method of precipitating the phosphor particles, a mixed liquid is prepared by mixing the phosphor particles in a volatile solvent, and the mixed liquid is dispensed or spray coated around the LED chip mounting portion. A method of arranging phosphor particles by volatilizing a volatile solvent after coating has been proposed (see, for example, Patent Documents 3 to 6).

この方法によれば、蛍光体粒子がLEDチップに接して均一に塗布されるため、色むらの改善を図れるとともに、蛍光体の沈降時間が省略できるため、製造費を削減することができる。   According to this method, since the phosphor particles are uniformly applied in contact with the LED chip, the color unevenness can be improved and the settling time of the phosphor can be omitted, so that the manufacturing cost can be reduced.

特表平11−500584号公報Japanese National Patent Publication No. 11-500584 特開平11−040858号公報JP-A-11-040858 特開2005−277127号公報JP 2005-277127 A 特開2003−115614号公報JP 2003-115614 A 特開2004−088013号公報JP 2004-088013 A 特開2009−076649号公報JP 2009-076649 A

しかしながら、ディスペンスやスプレーコートによる塗布では、個々のLEDチップに対して混合液の塗布を行わなければならない。従って、混合液の塗布に時間を要するため、依然として、製造費の削減は十分ではない。   However, in the application by dispensing or spray coating, it is necessary to apply the mixed solution to each LED chip. Therefore, since it takes time to apply the mixed solution, the manufacturing cost is still not sufficiently reduced.

本発明は、上記の従来技術の課題を鑑みてなされたものであり、視野角による色むらを抑制しつつ、材料費及び製造費を廉価にする発光装置の製造方法を提供することを目的とする。   The present invention has been made in view of the above-described problems of the prior art, and an object of the present invention is to provide a method for manufacturing a light-emitting device that reduces material costs and manufacturing costs while suppressing color unevenness due to viewing angles. To do.

上記の課題を解決すべく、本発明は、以下の構成の発光装置の製造方法を提供する。
即ち、ケースに設けられた凹部の底部に発光素子を搭載する素子搭載工程と、前記ケースの頂面に前記発光素子の搭載部分に対応する開口部を設けたマスクを配置するマスク配置工程と、前記マスクを用いて、揮発性溶媒に蛍光体粒子を分散させた混合液をスクリーン印刷し、前記凹部内の前記発光素子の搭載部周辺に前記混合液を塗布する塗布する混合液塗布工程と、前記混合液の前記揮発性溶媒を加熱して揮発させる溶媒揮発工程とを有することを特徴とする発光装置の製造方法である。
In order to solve the above problems, the present invention provides a method for manufacturing a light emitting device having the following configuration.
That is, an element mounting step of mounting a light emitting element on the bottom of a recess provided in the case, and a mask arranging step of disposing a mask provided with an opening corresponding to the mounting portion of the light emitting element on the top surface of the case; Using the mask, screen-printing a mixed liquid in which phosphor particles are dispersed in a volatile solvent, and applying the mixed liquid around the light-emitting element mounting portion in the recess; And a solvent volatilizing step for volatilizing the volatile solvent of the mixed liquid by heating.

本発明の発光装置の製造方法は、スクリーン印刷を用いて発光素子の搭載部分に混合液を塗布するため、混合液の一括塗布が可能となり、製造費が廉価となる。また、蛍光体粒子と混合した揮発性溶媒を揮発させることにより、蛍光体が発光素子に密に接するため、蛍光体粒子の供給量を少なくしても、十分な波長変換率を得ることができ、材料費が廉価となる。
尚、一般的にスクリーン印刷は、被印刷対象にマスクを全体的に密着させた状態でスキージの移動により、印刷物を塗布させることができる。本発明においては、ケースに凹部が形成されているため、マスクは全体的には密着した状態ではないが、ケースの頂面によりマスクが支持されるため、混合液を発光素子の周辺に塗布することができる。
In the method for manufacturing a light emitting device of the present invention, since the mixed liquid is applied to the mounting portion of the light emitting element using screen printing, it is possible to apply the mixed liquid all at once, and the manufacturing cost is low. In addition, by volatilizing the volatile solvent mixed with the phosphor particles, the phosphor is in close contact with the light-emitting element, so that a sufficient wavelength conversion rate can be obtained even if the amount of phosphor particles supplied is reduced. The material cost will be low.
In general, in screen printing, a printed material can be applied by moving a squeegee while the mask is in close contact with an object to be printed. In the present invention, since the recess is formed in the case, the mask is not in a close contact state as a whole, but since the mask is supported by the top surface of the case, the liquid mixture is applied to the periphery of the light emitting element. be able to.

図1(a),(b)は、従来のLEDランプを示す断面図であり、図1(a)は、蛍光体粒子を封止材中に分散させたLEDランプを示す断面図であり、図1(b)は、蛍光体を封止材中において沈降させたLEDランプを示す断面図である。1A and 1B are cross-sectional views showing a conventional LED lamp, and FIG. 1A is a cross-sectional view showing an LED lamp in which phosphor particles are dispersed in a sealing material. FIG.1 (b) is sectional drawing which shows the LED lamp which made the fluorescent substance settle in a sealing material. 図2(a)〜(d)は、本発明の実施の形態に用いるマスクの開口部の形状を示す上面図であり、図2(a)は、単一の円形の開口部を示す上面図であり、図2(b)は、単一の四角形の開口部を示す上面図であり、図2(c)は、複数の四角形を格子状に配置した開口部を示す上面図であり、図2(d)は、複数の六角形をハニカム状に配置した開口部を示す上面図である。2A to 2D are top views showing the shape of the opening of the mask used in the embodiment of the present invention, and FIG. 2A is a top view showing a single circular opening. FIG. 2B is a top view showing a single quadrangular opening, and FIG. 2C is a top view showing an opening in which a plurality of quadrangles are arranged in a grid pattern. 2 (d) is a top view showing an opening in which a plurality of hexagons are arranged in a honeycomb shape. 図3(a)〜(c)は、本発明の実施の形態のLEDランプの製造方法を示す断面図であり、図3(a)は、ケース材形成工程を示す断面図であり、図3(b)は、LEDチップ搭載工程を示す断面図であり、図3(c)は、マスク配置工程を示す断面図である。3 (a) to 3 (c) are cross-sectional views showing a method for manufacturing an LED lamp according to an embodiment of the present invention, and FIG. 3 (a) is a cross-sectional view showing a case material forming step. (B) is sectional drawing which shows an LED chip mounting process, FIG.3 (c) is sectional drawing which shows a mask arrangement | positioning process. 図4(a)〜(d)は、本発明の実施の形態のLEDランプの製造方法を示す断面図であり、図4(a)は、混合液塗布工程を示す断面図であり、図4(b)は、溶媒揮発工程を示す断面図であり、図4(c)は、封止工程を示す断面図であり、図4(d)は、個片化工程を示す断面図である。4 (a) to 4 (d) are cross-sectional views showing a method for manufacturing an LED lamp according to an embodiment of the present invention, and FIG. 4 (a) is a cross-sectional view showing a mixed liquid coating process. (B) is sectional drawing which shows a solvent volatilization process, FIG.4 (c) is sectional drawing which shows a sealing process, FIG.4 (d) is sectional drawing which shows an individualization process.

まず、本発明の実施の形態のLEDランプの製造方法に用いる各構成要素について説明する。   First, each component used for the manufacturing method of the LED lamp of embodiment of this invention is demonstrated.

(LEDチップ)
本発明の実施の形態に用いるLEDチップとしては、紫色光(ピーク波長:380nm〜450nm)又は青色光(ピーク波長:450nm〜495nm)を発するLEDチップであれば特に限定されない。
(LED chip)
The LED chip used in the embodiment of the present invention is not particularly limited as long as it is an LED chip that emits violet light (peak wavelength: 380 nm to 450 nm) or blue light (peak wavelength: 450 nm to 495 nm).

例えば、III族窒化物系化合物半導体(Al1−X−YInXGaYN、0≦X≦1,0≦Y≦1,0≦X+Y≦1)を用いたLEDチップを用いることができる。   For example, an LED chip using a group III nitride compound semiconductor (Al1-X—YInXGaYN, 0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ X + Y ≦ 1) can be used.

III族窒化物系化合物半導体からなるLEDチップは、サファイアからなる成長基板上に、バッファ層,n型層,発光層,p型層を有する半導体積層体を成長基板側からこの順に成長させ、所望の領域にn型層とコンタクトを取るためにp型層側からn型層が露出するまでエッチングし、p型層及びn型層の各々にコンタクト電極を形成した片面電極型の形態をとる。   An LED chip made of a group III nitride compound semiconductor has a desired structure in which a semiconductor laminate having a buffer layer, an n-type layer, a light emitting layer, and a p-type layer is grown in this order from the growth substrate side on a growth substrate made of sapphire. In order to make contact with the n-type layer in this region, etching is performed from the p-type layer side until the n-type layer is exposed, and a contact electrode is formed on each of the p-type layer and the n-type layer.

半導体積層体は、例えば、有機金属化学成長法(Metal Organic Chemical Vapor Deposition:MOCVD),分子線エピタキシー法(Molecular Beam Epitaxy:MBE),ハライド気相エピタキシー法(Halide Vapor Phase Epitaxy:HVPE)等によって形成される。   The semiconductor stack may be formed by, for example, metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), halide vapor phase epitaxy (Halide VaporPePeH, etc.). Is done.

本発明の実施の形態に用いるLEDチップとしては、p型層とのコンタクト電極として、Ag合金,Ag/Al等の反射性電極を用い、主として、成長基板側を光取出し面とするLEDチップ(所謂、フリップチップ型LEDチップ)、又は、p型層のコンタクト電極として、ITO(Indium Tin Oxide),IZO(Indium Zinc Oxide),ICO(Indium Cerium Oxide)等の透明導電性酸化物を用い、主として、半導体積層体側を光取出し面とするLEDチップ(所謂、フェイスアップ型LEDチップ)が挙げられる。   As the LED chip used in the embodiment of the present invention, a reflective electrode such as an Ag alloy or Ag / Al is used as a contact electrode with the p-type layer, and the LED chip mainly having a light extraction surface on the growth substrate side ( A so-called flip chip type LED chip) or a transparent conductive oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ICO (Indium Cerium Oxide) is mainly used as a contact electrode of a p-type layer. An LED chip (so-called face-up type LED chip) having a light extraction surface on the semiconductor laminate side can be mentioned.

また、上記の通り、成長基板上に半導体積層体を成長させた後、半導体積層体側に、Si,GaAs,Cu,CuW等からなる導電性基板を貼付けた後、成長基板をレーザー照射により除去し、導電性基板の裏面及び成長基板を除去して露出したn型層の各々に電極を形成して得られる両面電極型LEDチップ(所謂、LLO(Laser Lift Off)型チップ)を用いることもできる。   Further, as described above, after a semiconductor laminate is grown on the growth substrate, a conductive substrate made of Si, GaAs, Cu, CuW, or the like is attached to the semiconductor laminate, and then the growth substrate is removed by laser irradiation. A double-sided electrode type LED chip (so-called LLO (Laser Lift Off) type chip) obtained by forming electrodes on each of the n-type layer exposed by removing the back surface of the conductive substrate and the growth substrate can also be used. .

(ケース)
本発明の実施の形態に用いるケースとしては、光出射側の面である頂面に対して内側面及び底面を有する凹部を形成したものであれば特に限定されない。
(Case)
The case used in the embodiment of the present invention is not particularly limited as long as a concave portion having an inner side surface and a bottom surface is formed on the top surface which is a surface on the light emission side.

例えば、リードフレームと一括成形した樹脂ケースを用いることができる。この場合、樹脂ケースは、熱可塑性樹脂であるポリフタルアミド樹脂,液晶ポリマー樹脂を用いて射出成形により金型に応じて凹部を形成してもよいし、熱硬化性樹脂であるエポキシ樹脂,変性エポキシ樹脂,シリコーン樹脂,変性シリコーン樹脂を用いてトランスファー成形により金型に応じて凹部を形成してもよい。   For example, a resin case molded together with a lead frame can be used. In this case, the resin case may be formed with a recess according to the mold by injection molding using a polyphthalamide resin or liquid crystal polymer resin that is a thermoplastic resin, or an epoxy resin that is a thermosetting resin, or a modified resin. You may form a recessed part according to a metal mold | die by transfer molding using an epoxy resin, a silicone resin, and a modified silicone resin.

また、グリーンシートの積層体を焼結させて形成したセラミックスケースを用いることができる。この場合、パンチングにより開口部を設けたグリーンシートと配線パターンとなる金属粒子を表裏面に配置した平板状のグリーンシートとの積層体を焼結させることにより、凹部を形成する。グリーンシートの主成分としては、Al2O3粉末,AlN粉末が挙げられる。   A ceramic case formed by sintering a laminate of green sheets can be used. In this case, the concave portion is formed by sintering a laminate of a green sheet provided with an opening by punching and a flat green sheet in which metal particles to be a wiring pattern are arranged on the front and back surfaces. Examples of the main component of the green sheet include Al2O3 powder and AlN powder.

更に、金属ベース基板を用いることができる。この場合、凹部は、エンドミル,圧延,プレス,エッチングのいずれか若しくはこれらの組み合わせにより形成する。   Furthermore, a metal base substrate can be used. In this case, the concave portion is formed by any of end mill, rolling, pressing, etching, or a combination thereof.

上記のように、単一材料からなるケースだけではなく、頂面及び側面(以下、リフレクタと表記する。)と底部(以下、マウントと表記する。)とを別部材で形成した後、リフレクタとマウントを接着した複合材料からなるケースを用いてもよい。   As described above, not only a case made of a single material but also a top surface and side surfaces (hereinafter referred to as a reflector) and a bottom portion (hereinafter referred to as a mount) are formed as separate members, and then the reflector and You may use the case which consists of a composite material which adhere | attached the mount.

例えば、リフレクタの材料としては、Al合金、Fe合金等の金属や、ポリフタルアミド樹脂,液晶ポリマー等の熱可塑性樹脂や、エポキシ樹脂,変性エポキシ樹脂,シリコーン樹脂,変性シリコーン樹脂等の熱硬化性樹脂が挙げられる。一方、マウントの材料として、表裏面に配線パターンが形成されたアルミナ基板,窒化アルミニウム等のセラミック基板や、ガラスエポキシ基板や、樹脂混合リードフレームや、金属ベース基板が挙げられる。   For example, reflector materials include metals such as Al alloys and Fe alloys, thermoplastic resins such as polyphthalamide resins and liquid crystal polymers, and thermosetting resins such as epoxy resins, modified epoxy resins, silicone resins, and modified silicone resins. Resin. On the other hand, examples of the mount material include an alumina substrate having a wiring pattern formed on the front and back surfaces, a ceramic substrate such as aluminum nitride, a glass epoxy substrate, a resin mixed lead frame, and a metal base substrate.

ケース,リフレクタ,マウントに樹脂を用いる場合は、反射性を向上させるために、樹脂にTiO2,BaSO4,Al2O3,ZnO,BN等の白色顔料を含有させることが好ましい。この内、廉価で、耐候性,化学的安定性に優れたTiO2を用いることが好ましい。   When a resin is used for the case, reflector, and mount, it is preferable that the resin contains a white pigment such as TiO2, BaSO4, Al2O3, ZnO, or BN in order to improve reflectivity. Of these, it is preferable to use TiO 2 which is inexpensive and excellent in weather resistance and chemical stability.

また、リフレクタの内側面の表面には、Al,Ag,Cr,Pd等から選択される一以上の金属又はその合金からなる反射形成することが好ましい。この内、廉価で、化学的安定性に優れたAl,Al合金を用いることが好ましい。   Moreover, it is preferable to form a reflection made of one or more metals selected from Al, Ag, Cr, Pd or the like or an alloy thereof on the inner surface of the reflector. Of these, it is preferable to use an Al or Al alloy that is inexpensive and excellent in chemical stability.

(蛍光体)
本発明の実施の形態に用いる蛍光体粒子としては、種々の選択が可能である。
(Phosphor)
Various selections are possible for the phosphor particles used in the embodiments of the present invention.

例えば、紫色LEDチップと併用する場合、演色性の観点から、青色蛍光体粒子及び黄色蛍光体粒子と組み合わせて用いるか、青色蛍光体粒子,黄色蛍光体粒子及び赤色蛍光体粒子と組み合わせて用いるか、青色蛍光体粒子,緑色蛍光体粒子及び赤色蛍光体粒子と組み合わせて用いることが好ましい。   For example, when used in combination with a purple LED chip, is it used in combination with blue phosphor particles and yellow phosphor particles or in combination with blue phosphor particles, yellow phosphor particles and red phosphor particles from the viewpoint of color rendering properties? It is preferable to use in combination with blue phosphor particles, green phosphor particles and red phosphor particles.

また、青色LEDチップと併用する場合、上記と同様の観点から、黄色蛍光体粒子と組み合わせて用いるか、黄色蛍光体粒子及び赤色蛍光体粒子と組み合わせて用いるか、緑色蛍光体粒子及び赤色蛍光体粒子と組み合わせて用いることが好ましい。   Further, when used in combination with a blue LED chip, from the same viewpoint as described above, it is used in combination with yellow phosphor particles, in combination with yellow phosphor particles and red phosphor particles, or green phosphor particles and red phosphor. It is preferable to use in combination with particles.

更に、複数種のLEDチップと併用する場合、例えば、青色LEDチップ及び緑色LEDチップと併用する場合、赤色蛍光体と組み合わせることが好ましいし、青色LEDチップ及び赤色LEDチップと併用する場合、緑色蛍光体粒子又は黄色蛍光体粒子と組み合わせることが好ましい。   Further, when used in combination with a plurality of types of LED chips, for example, when used in combination with a blue LED chip and a green LED chip, it is preferable to combine with a red phosphor, and when used in combination with a blue LED chip and a red LED chip, green fluorescence. It is preferable to combine with body particles or yellow phosphor particles.

蛍光体の平均粒径は、マスクの開口部からの抜けを考慮すると、1μm〜30μmが好ましい。   The average particle diameter of the phosphor is preferably 1 μm to 30 μm in consideration of the escape from the opening of the mask.

青色蛍光体粒子(ピーク波長:450nm〜495nm)としては、例えば、以下の蛍光材料が挙げられる。
(Ba,Sr)MgAl10O17:Eu2+
(Ba,Ca,Mg)5(PO4)3Cl:Eu2+
(Ca,Sr,Ba)2SiS4:Ce3+
(Ca,Sr,Ba)10(PO4)・Cl2:Eu2+
Examples of the blue phosphor particles (peak wavelength: 450 nm to 495 nm) include the following fluorescent materials.
(Ba, Sr) MgAl10O17: Eu2 +
(Ba, Ca, Mg) 5 (PO4) 3Cl: Eu2 +
(Ca, Sr, Ba) 2SiS4: Ce3 +
(Ca, Sr, Ba) 10 (PO4) .Cl2: Eu2 +

緑色蛍光体粒子(ピーク波長:495nm〜570nm)としては、例えば、以下の蛍光材料が挙げられる。
Si6−zAlzOzN8−z:Eu2+(但し、0<z≦4.2)
(Ca,Sr,Ba)Si2O2N2:Eu2+
Y3(Al,Ga)5O12:Ce3+
(Sr,Ba)2SiO4:Eu2+(但し、Srの係数<Baの係数)
(Sr,Ba)3SiO5:Eu2+(但し、Srの係数<Baの係数)
(Ca,Sr,Ba)Ga2S4:Eu2+
Examples of the green phosphor particles (peak wavelength: 495 nm to 570 nm) include the following fluorescent materials.
Si6-zAlzOzN8-z: Eu2 + (where 0 <z ≦ 4.2)
(Ca, Sr, Ba) Si2O2N2: Eu2 +
Y3 (Al, Ga) 5O12: Ce3 +
(Sr, Ba) 2SiO4: Eu2 + (where Sr coefficient <Ba coefficient)
(Sr, Ba) 3SiO5: Eu2 + (where Sr coefficient <Ba coefficient)
(Ca, Sr, Ba) Ga2S4: Eu2 +

黄色蛍光体粒子(ピーク波長:570nm〜590nm)としては、例えば、以下の蛍光材料が挙げられる。
Y3Al5O12:Ce3+
(Sr,Ba)2SiO4:Eu2+(但し、Srの係数>Baの係数)
(Sr,Ba)3SiO5:Eu2+(但し、Srの係数>Baの係数)
(Ca,Mg)x(Si,Al)12(O,N)16:Eu2+(但し、0<x≦2)
Examples of yellow phosphor particles (peak wavelength: 570 nm to 590 nm) include the following fluorescent materials.
Y3Al5O12: Ce3 +
(Sr, Ba) 2SiO4: Eu2 + (where Sr coefficient> Ba coefficient)
(Sr, Ba) 3SiO5: Eu2 + (where Sr coefficient> Ba coefficient)
(Ca, Mg) x (Si, Al) 12 (O, N) 16: Eu2 + (where 0 <x ≦ 2)

赤色光変換蛍光体(ピーク波長:590nm〜700nm)としては、例えば、以下の蛍光体が挙げられる。
(Ca,Sr,Ba)AlSiN3:Eu2+
(Ca,Sr,Ba)2Si5N8:Eu2+
(Y,Gd)3Al5O12:Ce3+
(Y,La)O3:Eu2+
(Ca,Sr)S:Eu2+
Examples of the red light conversion phosphor (peak wavelength: 590 nm to 700 nm) include the following phosphors.
(Ca, Sr, Ba) AlSiN3: Eu2 +
(Ca, Sr, Ba) 2Si5N8: Eu2 +
(Y, Gd) 3Al5O12: Ce3 +
(Y, La) O3: Eu2 +
(Ca, Sr) S: Eu2 +

複数種の蛍光体粒子を組み合わせて用いる場合、製造費の低減の観点からは、これらの蛍光体粒子を混合させた混合液として塗布し、揮発性溶媒を揮発させて単層構造とすることが好ましい。塗布を一括して行えるためである。一方、励起効率の観点からは、長波長側の波長変換光を発する蛍光体粒子から順に分けて混合した混合液として塗布し、揮発性溶媒を揮発させて積層構造とすることが好ましい。長波長の波長変換光を発する蛍光体粒子をLEDチップ側に配置することにより、これより上層に配置された短波長の波長変換光を発する蛍光体粒子が長波長の波長変換光を発する蛍光体粒子の波長変換光により再励起されないためである。   When using a combination of multiple types of phosphor particles, from the viewpoint of reducing manufacturing costs, it is possible to apply these phosphor particles as a mixed liquid and volatilize the volatile solvent to form a single layer structure. preferable. This is because the application can be performed collectively. On the other hand, from the viewpoint of excitation efficiency, it is preferable to apply as a mixed solution in which the phosphor particles emitting wavelength-converted light on the long wavelength side are sequentially mixed and volatilize the volatile solvent to obtain a laminated structure. A phosphor that emits long-wavelength converted light by arranging phosphor particles that emit long-wavelength wavelength-converted light on the LED chip side, and phosphor particles that emit wavelength-converted light of short wavelength disposed above this This is because it is not re-excited by the wavelength-converted light of the particles.

(揮発性溶媒)
本発明の実施の形態に用いる揮発性溶媒としては、アルコール系溶媒が挙げられる。
アルコール系溶媒の中でも、室温で蒸発しににくく、沸点が比較的低いテルピネオール(沸点:220℃)を用いることが好ましい。
(Volatile solvent)
Examples of the volatile solvent used in the embodiment of the present invention include alcohol solvents.
Among alcohol solvents, it is preferable to use terpineol (boiling point: 220 ° C.) that is difficult to evaporate at room temperature and has a relatively low boiling point.

(混合液)
本発明の実施の形態に混合液は、上記の揮発性溶媒に上記の蛍光体粒子を混合させた混合液である。その他、溶融シリカ,結晶質シリカ,ガラス等の透明粒子を含有させて、LEDチップからの発光光をある程度透過させるようにしてもよい。透明粒子を含有させる場合、封止材との屈折率差を生じさせて、LEDチップからの発光光と蛍光体粒子からの波長変換光と封止材内において、積極的に混合させることが好ましい。透明粒子の平均粒径は、マスクの開口部からの抜けを考慮すると、1μm〜30μmが好ましい。
(Mixture)
The liquid mixture in the embodiment of the present invention is a liquid mixture obtained by mixing the above-described phosphor particles in the above-mentioned volatile solvent. In addition, transparent particles such as fused silica, crystalline silica, and glass may be included so that light emitted from the LED chip is transmitted to some extent. When the transparent particles are included, it is preferable that the refractive index difference with the encapsulant is generated, and the light emitted from the LED chip, the wavelength converted light from the phosphor particles, and the encapsulant are mixed positively. . The average particle diameter of the transparent particles is preferably 1 μm to 30 μm in consideration of the escape from the opening of the mask.

混合液は、スクリーン印刷による塗布を容易に行うために、粘度が10Pa・s〜300Pa・sとなるように揮発性溶媒とこれに混合させる粒子との比率を調整することが好ましい。   In order for the liquid mixture to be easily applied by screen printing, it is preferable to adjust the ratio of the volatile solvent and the particles to be mixed therein so that the viscosity is 10 Pa · s to 300 Pa · s.

(マスク)
本発明の実施の形態に用いるマスクとしては、ステンレス鋼板材にエッチングにより開口部を形成するエッチングメタルマスク,ステンレス鋼板材にレーザー加工により開口部を形成するレーザーメタルマスク,電鋳法により開口部を設けたNi板材を形成するアディティブメタルマスクが挙げられる。この中でも、開口部の微細化が容易なアディティブメタルマスクを用いることが好ましい。
(mask)
As a mask used in the embodiment of the present invention, an etching metal mask that forms an opening by etching in a stainless steel plate material, a laser metal mask that forms an opening by laser processing in a stainless steel plate material, and an opening by electroforming An additive metal mask for forming the provided Ni plate material is exemplified. Among these, it is preferable to use an additive metal mask in which the opening can be easily miniaturized.

開口部Hは、図2(a)〜図2(d)に示すように、LEDチップ12の周辺部にまで蛍光体粒子を配置するために、LEDチップ12の外形より大きな範囲に混合液を塗布可能な形状とすることが好ましい。例えば、1個のLEDチップ12に対して、図2(a),(b)に示すように、単一の円形や四角形の開口部Hを対応させてもよいし、図2(c),(d)に示すように、格子状に配置された複数の四角形やハニカム状に配置された六角形の開口部Hを組み合わせて対応させてもよい。複数の開口部Hを設けた方が、混合液の塗布の均一性がより確保できる。   As shown in FIGS. 2 (a) to 2 (d), the opening H has a liquid mixture in a larger range than the outer shape of the LED chip 12 in order to arrange the phosphor particles up to the periphery of the LED chip 12. A shape that can be applied is preferable. For example, as shown in FIGS. 2 (a) and 2 (b), a single circular or square opening H may be associated with one LED chip 12, or FIGS. As shown in (d), a plurality of quadrangles arranged in a lattice shape or hexagonal openings H arranged in a honeycomb shape may be combined to correspond to each other. If the plurality of openings H are provided, the uniformity of the application of the mixed liquid can be further ensured.

(封止材)
本発明の実施の形態に用いる封止材としては、エポキシ樹脂、変性エポキシ樹脂、シリコーン樹脂、変性シリコーン樹脂、フッ素樹脂、ゾルゲルガラス、低融点ガラスが挙げられる。
これらの中でも、耐熱性、耐光性に優れ、LEDチップの封止を容易に行えるシリコーン樹脂又は変性シリコーン樹脂を用いることが好ましい。
(Encapsulant)
Examples of the sealing material used in the embodiment of the present invention include epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, fluororesin, sol-gel glass, and low-melting glass.
Among these, it is preferable to use a silicone resin or a modified silicone resin that is excellent in heat resistance and light resistance and can easily seal the LED chip.

次に、上記の構成要素を用いて発光装置を製造する方法について、添付の図面を参照して説明する。   Next, a method for manufacturing a light-emitting device using the above-described components will be described with reference to the accompanying drawings.

(ケース形成工程)
図3(a)に示すように、凹部を複数有するケース集合体11aを形成する。ケース集合体11aの各凹部の底面にはリードフレーム又は配線パターン等の導体(図示せず。)が露出しており、凹部の底面に対応するケース集合体16bの各裏面から外部と電気的にできるようになっている。
(Case forming process)
As shown in FIG. 3A, a case assembly 11a having a plurality of recesses is formed. A conductor (not shown) such as a lead frame or a wiring pattern is exposed on the bottom surface of each recess of the case assembly 11a, and is electrically connected to the outside from each back surface of the case assembly 16b corresponding to the bottom surface of the recess. It can be done.

(LEDチップ搭載工程)
図3(b)に示すように、ケース集合体11aの各凹部の底面にLEDチップ12を搭載する。LEDチップ12がフェイスアップ型LEDチップの場合、ワイヤを介して凹部底面の導体と電気的に接続させる。LEDチップ12がフリップチップ型LEDチップの場合、金属バンプ又はハンダを介して凹部底面の導体と電気的に接続させる。LEDチップ12がLLO型チップの場合は、裏面の電極はハンダを介して、上面の電極はワイヤを介して導体と電気的に接続させる。
(LED chip mounting process)
As shown in FIG. 3B, the LED chip 12 is mounted on the bottom surface of each recess of the case assembly 11a. When the LED chip 12 is a face-up type LED chip, it is electrically connected to the conductor on the bottom surface of the recess through a wire. When the LED chip 12 is a flip chip type LED chip, it is electrically connected to the conductor on the bottom surface of the recess through a metal bump or solder. When the LED chip 12 is an LLO type chip, the electrode on the back surface is electrically connected to the conductor via the solder, and the electrode on the upper surface is electrically connected to the conductor via the wire.

(マスク配置工程)
図3(c)に示すように、ケース集合体11aの頂面に接するように各凹部に対応した開口部Hを有するメタルマスクMを配置する。
(Mask placement process)
As shown in FIG. 3C, a metal mask M having openings H corresponding to the respective recesses is disposed so as to contact the top surface of the case assembly 11a.

(混合液塗布工程)
図4(a)に示すように、メタルマスクMの表面に揮発性溶媒に蛍光体粒子を混合させた混合液14を配置し、スキージSをメタルマスクMの表面に沿って移動させることにより、メタルマスクの開口部HよりLEDチップ12の周辺部に混合液が塗布される。
(Mixed liquid application process)
As shown in FIG. 4A, by placing a mixed solution 14 in which phosphor particles are mixed in a volatile solvent on the surface of the metal mask M and moving the squeegee S along the surface of the metal mask M, The mixed solution is applied to the periphery of the LED chip 12 from the opening H of the metal mask.

(溶媒揮発工程)
図4(b)に示すように、LEDチップ12の周辺部に塗布された混合液の揮発性溶媒を加熱することにより揮発させて、蛍光体粒子15のみをLEDチップに接した状態にする。揮発性溶媒は、沸点以下の温度で揮発させることが好ましい。突沸により、蛍光体粒子15がLEDチップ12周辺に均一に配置されない可能性があるからである。
(Solvent volatilization process)
As shown in FIG. 4B, the volatile solvent of the mixed liquid applied to the periphery of the LED chip 12 is volatilized by heating, so that only the phosphor particles 15 are in contact with the LED chip. The volatile solvent is preferably volatilized at a temperature below the boiling point. This is because the phosphor particles 15 may not be uniformly arranged around the LED chip 12 due to bumping.

(封止工程)
図4(c)に示すように、ディスペンサDにより、ケース集合体11aの各凹部に未硬化の封止材16aを供給した後、硬化させてLEDチップを封止材16bにより封止する。
(Sealing process)
As shown in FIG.4 (c), after supplying the non-hardened sealing material 16a to each recessed part of the case aggregate 11a with the dispenser D, it is made to harden and an LED chip is sealed with the sealing material 16b.

(個片化工程)
図4(d)に示すように、ケース集合体16aを個々のケース16b毎に分割して、複数のLEDランプを得る。ケース集合体16aがセラミックからなる単一材料である場合は、スナッピングより分割する。ケース集合体16aが樹脂からなる単一材料の場合や、複合材料の場合は、ダイシングにより分割する。
(Separation process)
As shown in FIG. 4D, the case aggregate 16a is divided into individual cases 16b to obtain a plurality of LED lamps. When the case assembly 16a is a single material made of ceramic, it is divided by snapping. When the case assembly 16a is a single material made of resin or a composite material, the case assembly 16a is divided by dicing.

本実施の形態のLEDランプの製造方法によれば、スクリーン印刷を用いて発光素子の搭載部分に混合液を塗布するため、混合液の一括塗布が可能となり、製造費が廉価となる。また、蛍光体粒子と混合した揮発性溶媒を揮発させることにより、蛍光体がLEDチップに密に接するため、蛍光体粒子の供給量を少なくしても、十分な波長変換率を得ることができ、材料費が廉価となる。   According to the LED lamp manufacturing method of the present embodiment, since the mixed solution is applied to the light emitting element mounting portion using screen printing, it is possible to apply the mixed solution all at once, and the manufacturing cost is reduced. In addition, by volatilizing the volatile solvent mixed with the phosphor particles, the phosphor is in close contact with the LED chip, so that a sufficient wavelength conversion rate can be obtained even if the supply amount of the phosphor particles is reduced. The material cost will be low.

本発明の製造方法により得られる発光装置は、上面発光型LEDランプ(所謂、トップビュー型LEDランプ),側面発光型LEDランプ(所謂、サイドビュー型LEDランプ)、チップオンボード(Chip On Board)型LEDモジュール(所謂、COB型モジュール)等に適用され、照明や液晶ディスプレイのバックライト等の各種光源に採用することができる。   The light-emitting device obtained by the manufacturing method of the present invention includes a top-emitting LED lamp (so-called top-view LED lamp), a side-emitting LED lamp (so-called side-view LED lamp), and a chip-on-board. The present invention is applied to a type LED module (so-called COB type module) and the like, and can be used for various light sources such as illumination and a backlight of a liquid crystal display.

この発明は、上記の発明の実施の形態の説明に何ら限定されるものではない。特許請求の範囲を逸脱せず、当業者が容易に想到できる範囲において種々の変形態様もこの発明に含まれる。   The present invention is not limited to the description of the embodiment of the invention described above. Various modifications are also included in the present invention as long as those skilled in the art can easily conceive without departing from the scope of the claims.

1 ケース
2 LEDチップ(発光素子)
5 蛍光体粒子
6 封止材
11a ケース集合体
11b ケース
12 LEDチップ(発光素子)
14 混合液
15 蛍光体粒子
16 封止材
M メタルマスク
H 開口部
S スキージ
D ディスペンサ
1 Case 2 LED chip (light emitting element)
5 Phosphor Particles 6 Sealing Material 11a Case Assembly 11b Case 12 LED Chip (Light Emitting Element)
14 Mixture 15 Phosphor Particle 16 Sealing Material M Metal Mask H Opening S Squeegee D Dispenser

Claims (5)

ケースに設けられた凹部の底部に発光素子を搭載する素子搭載工程と、
前記ケースの頂面に前記発光素子の搭載部分に対応する開口部を設けたマスクを配置するマスク配置工程と、
前記マスクを用いて、揮発性溶媒に蛍光体粒子を分散させた混合液をスクリーン印刷し、前記凹部内の前記発光素子の搭載部周辺に前記混合液を塗布する塗布する混合液塗布工程と、
前記混合液の前記揮発性溶媒を加熱して揮発させる溶媒揮発工程と
を有することを特徴とする発光装置の製造方法。
An element mounting step of mounting a light emitting element on the bottom of the recess provided in the case;
A mask placement step of placing a mask provided with an opening corresponding to the mounting portion of the light emitting element on the top surface of the case;
Using the mask, screen-printing a mixed liquid in which phosphor particles are dispersed in a volatile solvent, and applying the mixed liquid around the light-emitting element mounting portion in the recess;
And a solvent volatilization step of volatilizing the volatile solvent of the mixed liquid by heating to volatilize.
前記溶媒揮発工程の後、前記凹部内に未硬化の封止材を供給して硬化させて前記発光素子を封止する封止工程を更に有する請求項1に記載の発光装置の製造方法。   The manufacturing method of the light-emitting device according to claim 1, further comprising a sealing step of sealing the light-emitting element by supplying an uncured sealing material into the concave portion and curing after the solvent volatilization step. 前記溶媒揮発工程において、前記揮発性溶媒の沸点を超えない温度で該揮発性溶媒を揮発させることを特徴とする請求項2に記載の発光装置の製造方法。   3. The method for manufacturing a light emitting device according to claim 2, wherein in the solvent volatilization step, the volatile solvent is volatilized at a temperature not exceeding the boiling point of the volatile solvent. 前記混合液は、透明粒子を更に有することを特徴とする請求項1乃至請求項3のいずれか一項に記載の発光装置の製造方法。   The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein the mixed solution further includes transparent particles. 前記揮発性溶媒は、アルコール系溶媒であることを特徴とする請求項1乃至請求項4のいずれか一項に記載の発光装置の製造方法。

The method for manufacturing a light-emitting device according to claim 1, wherein the volatile solvent is an alcohol solvent.

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