JP2009076749A - Led apparatus, and method of manufacturing the same - Google Patents

Led apparatus, and method of manufacturing the same Download PDF

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JP2009076749A
JP2009076749A JP2007245423A JP2007245423A JP2009076749A JP 2009076749 A JP2009076749 A JP 2009076749A JP 2007245423 A JP2007245423 A JP 2007245423A JP 2007245423 A JP2007245423 A JP 2007245423A JP 2009076749 A JP2009076749 A JP 2009076749A
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phosphor
led
light emitting
light
resin
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JP2009076749A5 (en
Inventor
Shigeyoshi Fushida
Shintaro Hakamada
Masato Kamiya
Aya Kawaoka
あや 川岡
正人 神谷
重義 節田
新太郎 袴田
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Toyoda Gosei Co Ltd
豊田合成株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

<P>PROBLEM TO BE SOLVED: To increase the luminance of an LED apparatus high (improve its light intensity) and reduce its color mixing unevenness, i.e., make its luminescent color uniform in the LED apparatus for obtaining its luminescence of a desired color by using a phosphor. <P>SOLUTION: The LED apparatus comprises a group III nitride-based compound semiconductor light-emitting element manufactured by a laser lift-off method and a phosphor layer formed on the top surface of the light-emitting surface of the light-emitting element by a spray-coating method. The phosphor layer is formed by spray-coating the coating material comprising a resin, the phosphor 10, and a volatile organic solvent. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an LED device and a manufacturing method thereof. Specifically, the present invention relates to an LED device that obtains a desired emission color using a phosphor and a method for manufacturing the LED device.
Along with the expansion of applications, there is a demand for higher brightness of LED devices. As represented by LED devices that emit white light, in the case of an LED device that obtains a desired emission color using a phosphor, attaching a phosphor in the vicinity of the LED element at a high concentration increases the brightness. It is considered advantageous. As a method of attaching a phosphor to an LED element, a method of printing a phosphor paste on the surface of the LED element using a metal mask is known (see, for example, Patent Document 1). However, in this method, the thickness of the metal mask is limited, and it is difficult to form a very thin phosphor layer of, for example, 50 μm or less. Further, since the metal mask comes into contact with the wire, this method cannot be used for forming the phosphor layer on the element surface after wire bonding.
On the other hand, a method of forming a phosphor layer by spray coating is known (see, for example, Patent Documents 2 and 3).
JP 2005-311395 A JP 2003-115614 A JP 2004-88013 A
  An object of the present invention is to achieve high brightness (improvement of luminous intensity) in an LED device that obtains light of a desired color using a phosphor. Another object of the present invention is to reduce uneven color mixing, that is, to achieve uniform emission color.
In order to solve the above problems, the present invention provides an LED device having the following configuration. That is,
An LED device comprising: a group III nitride compound semiconductor light emitting device manufactured by a laser lift-off method; and a phosphor layer formed on a top light emitting surface of the light emitting device by spray coating.
In the LED device of the present invention, a thin phosphor layer containing phosphor at a high concentration is formed on the top light emitting surface of the light emitting element by adopting spray coating as the phosphor layer forming method. Thereby, it becomes a high-intensity (high luminous intensity) LED device.
On the other hand, in the group III nitride compound semiconductor light emitting device manufactured by the laser lift-off method, the amount of light extracted from the top light emitting surface is overwhelmingly larger than the light extracted from the side surface. Therefore, light conversion by the phosphor on the side of the light emitting element, which is a major cause of uneven color mixing, can be substantially ignored. As a result, a high-quality LED device with very little color mixing unevenness is obtained.
  A first aspect of the present invention relates to an LED device. Hereinafter, the LED device of the present invention will be described for each component.
(Light emitting element)
The LED device of the present invention includes a group III nitride compound semiconductor light emitting device manufactured by a laser lift-off method. The laser lift-off (LLO) method is a method in which a semiconductor layer is stacked on a substrate and then irradiated with a high-power laser beam to partially thermally decompose the substance, thereby separating the portion at the boundary. . In this specification, the “Group III nitride compound semiconductor light-emitting device manufactured by the laser lift-off method” refers to a Group III nitride compound semiconductor device in which the substrate is replaced by using the laser lift-off method. Say. In the case of a group III nitride compound semiconductor light emitting device, after removing the growth substrate such as sapphire, a silicon substrate, a GaN substrate, a GaAs substrate or the like is attached. For convenience of explanation, a group III nitride compound semiconductor light-emitting device manufactured by a laser lift-off method will be omitted below and referred to as an “LLO device”.
In this specification, the group III nitride compound semiconductor is represented by a general formula of Al X Ga Y In 1- XYN (0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ X + Y ≦ 1), Includes so-called binary systems of AlN, GaN and InN, so-called ternary systems of Al x Ga 1-x N, Al x In 1-x N and Ga x In 1-x N (above 0 <x <1) To do. Part of group III elements may be substituted with boron (B), thallium (Tl), etc., and part of nitrogen (N) may also be phosphorus (P), arsenic (As), antimony (Sb), bismuth. It can be replaced with (Bi) or the like. The group III nitride compound semiconductor layer may contain an arbitrary dopant. Si, Ge, Se, Te, C, or the like can be used as the n-type impurity. Mg, Zn, Be, Ca, Sr, Ba, or the like can be used as the p-type impurity. It is also possible to expose the group III nitride compound semiconductor to electron beam irradiation, plasma irradiation or heating by a furnace after doping with a p-type impurity. The formation method of the group III nitride compound semiconductor layer is not particularly limited. In addition to the metal organic chemical vapor deposition method (MOCVD method), the known molecular beam crystal growth method (MBE method), halide vapor phase epitaxy method (HVPE method). ), A sputtering method, an ion plating method, an electron shower method, or the like.
  As a structure of the light emitting element, a structure having a MIS junction, a PIN junction or a pn junction, a homo structure, a hetero structure, or a double hetero structure can be used (in these cases, a layer contributing to light emission). Is called a light emitting layer). A quantum well structure (single quantum well structure or multiple quantum well structure) can also be adopted as the light emitting layer.
(Phosphor layer)
The LED device of the present invention includes a phosphor layer formed on the top light emitting surface of the light emitting element by spray coating. A specific method for forming the phosphor layer will be described later. The thickness of the phosphor layer is not particularly limited. However, in the present invention that employs spray coating as a method for forming the phosphor layer, the phosphor layer can be made very thin. The thickness of the phosphor layer is, for example, 10 μm to 25 μm, preferably 15 μm to 21 μm. The particle size of the phosphor is preferably 1 to 10 μm. By using a phosphor having a small particle size in this way, a phosphor layer having a large phosphor content is obtained even if it is thin, and the luminous intensity of the LED device is improved while achieving desired light conversion.
(Luminescent color)
The LED device of the present invention emits light in a desired color by mixing the light from the LLO element and the light from the phosphor. The emission color depends on the emission color (emission wavelength) of the LLO element and the fluorescent color of the phosphor. In one form, the LED device of the present invention emits white light. For example, combining an LLO element that emits blue light (blue LED element) and a phosphor that emits yellow fluorescence when excited by blue light (yellow phosphor) emits white light. LED device can be configured. As the blue LED element, for example, one having a main emission peak wavelength in the range of 440 nm to 500 nm can be used. Preferably, those having a main emission peak wavelength in the range of 450 nm to 490 nm are used.
The yellow phosphor for example, the general formula Y 3-x Gd x Al 5 -y Ga y O 12: Ce (0 ≦ x ≦ 3,0 ≦ y ≦ 5) yttrium-aluminum-garnet fluorescent represented by The body (YAG phosphor) can be suitably used. Such a phosphor efficiently converts blue light into yellow or yellow-green light. In the above general formula, yttrium (Y) partially or wholly substituted with Lu or La can be used, and aluminum (Al) partially or entirely replaced with In or Sc. You can also.
As the yellow phosphor, (Ca 0.49 Mg 0.50 ) 3 (Sc 0.75 Y 0.25 ) 2 Si 3 O 12.015 : Ce 3+ , (Ca 0.99 ) 3 Sc 2 Si 3 O 12.015 : Ce 3+ , (Ca 0.49 Mg 0.50 ) 3 (Sc 0.50 Y 0.50 ) 2 Si 3 O 12.015 : Ce 3+ , (Ca 0.49 Mg 0.50 ) 3 (Sc 0.50 Lu 0.50 ) 2 Si 3 O 12.015 : Ce 3+ , BOS (barium ortho-Silicate) phosphor (Ba, Sr, Ca) 2 SiO 4 : Eu 2+ , Eu 0.5 Si 9.75 Al 2.25 N 15.25 O 0.75 (Eu-alpha sialon) or the like can also be used.
The combination of the LLO element and the phosphor for obtaining white light is not limited to the above example. For example, an element that emits light in the near ultraviolet region (near ultraviolet LED element) is used as the LLO element, and a blue phosphor and a yellow phosphor are used in combination as the phosphor. As the near ultraviolet LED element here, for example, one having a main emission peak wavelength in the range of 380 nm to 410 nm can be used. Near-ultraviolet light is less easily recognized by human vision as the wavelength becomes shorter, and the appearance of the light-emitting device is not impaired by the irradiation. Considering this point, it is preferable to use a near-ultraviolet LED element having a main emission peak wavelength of preferably 380 nm to 400 nm, more preferably 380 nm to 390 nm. On the other hand, what emits blue light when excited by the light from the near ultraviolet LED element may be used as the blue phosphor here. Further, as the yellow fluorescent material, a material that emits yellow fluorescent light by the light from the near ultraviolet LED element or the blue fluorescent material may be used. The blue phosphor includes (Ba, Ca, Mg) 5 (PO 4 ) 3 Cl: Eu 2+ , (Ba, Mg) 2 Al 16 O 27 : Eu 2+ , Ba 3 MgSi 2 O 8 : Eu 2+. BaMg 2 Al 16 O 27 : Eu 2+ , (Sr, Ca, Ba) 10 (PO 4 ) 6 · Cl 2 : Eu 2+ , Sr 10 (PO 4 ) 6 · Cl 2 : Eu 2+ , etc. it can.
The phosphor is appropriately selected in consideration of the emission color of the laser lift-off element to be used, the emission color of the LED device, and the like, and is not limited to the above-described yellow phosphor and blue phosphor. Hereinafter, an example of a red phosphor and a green phosphor will be shown.
Examples of red phosphors include Y 2 O 3 : Eu, Y 2 O 2 S: Eu, (Y, La) O 3 : Eu, (Ca, Sr) S: Eu, and Y 2 Al 5 O 12 : Eu. Y 3 (Al, Ga) 5 O 12 : Eu, SrY 2 S 4 : Eu, Y 2 O 2 S: Eu, Bi, YVO 4 : Eu, Bi, SrS: Eu, CaLa 2 S 4 : Ce, Eu 0.0005 Ca 0.9995 AlSiN 3 or the like can be employed.
Examples of green phosphors include (Y, Ce) 3 (Al, Ga) 5 O 12 : Tb, BaMgAl 10 O 17 : Eu, Ba 2 MgSi 2 O 7 : Eu, (Sr, Ca, Ba) (Al , Ga) 2 S 4: Eu , BaSiO 4: Eu, YBO 3: Ce, Tb, (Ca, Sr) p / 2 Si 12-p-q Al p + q O 1-q N: Ce, Ca 8 Mg (SiO 4 ) 4 Cl 2 : Eu, SrAl 2 O 4 : Eu, SrAl 14 O 25 : Eu, (Ca 0.99 ) 3 Sc 2 Si 3 O 12.015 : Ce 3+ , (Ca 0.49 Zn 0.50 ) 3 Sc 2 Si 3 O 12.15 : Ce 3+ can be employed.
  A plurality of types of phosphors may be used in combination. As long as the desired emission color is finally obtained, the combination in that case is arbitrary. Two or more kinds of phosphors of similar colors may be combined.
(LED device type)
The LED device of the present invention is packaged as, for example, a surface mount type (SMD type) or lens type (for example, one having a bullet type lens). Alternatively, a so-called chip-on-board type in which the light emitting element is directly mounted on the mounting substrate may be used.
(Manufacturing method of LED device)
The second aspect of the present invention provides a manufacturing method for manufacturing an LED device that emits light with high luminance and has little color mixing unevenness. Although the manufacturing method of the present invention is suitable for manufacturing the LED device of the present invention, an LED device using a light emitting element mounted by flip chip or a normal light emitting element (that is not an LLO element) mounted face-up is used. The present invention can also be applied to manufacturing various types of LED devices such as LED devices.
  In the production method of the present invention, a first step of preparing a group III nitride compound semiconductor light-emitting device mounted on a substrate, a paint comprising a resin, a phosphor and a volatile organic solvent is prepared, and the paint is applied by spray coating. A second step of coating the top light emitting surface of the light emitting element and a third step of drying and curing the coated paint are sequentially performed. In the production method of the present invention, the phosphor layer is formed using a paint using a volatile organic solvent. Therefore, even if the phosphor is added at a high concentration relative to the resin, the viscosity is lowered during coating and the workability is improved. Can be improved. On the other hand, after coating, the phosphor layer containing the phosphor in a high concentration can be obtained by volatilizing the solvent in the paint.
(First step)
In this step, a group III nitride compound semiconductor light emitting device mounted on a substrate is prepared. As the light-emitting element here, an LLO element is preferably used, but a light-emitting element that is flip-chip mounted or a light-emitting element that is face-up mounted can also be used. Mounting of the light emitting element on the substrate (mounting on the substrate using a paste material, wire bonding, etc.) may be performed by a conventional method. A submount substrate is used as necessary.
The light emission color of the light emitting element is determined so that light emission of a desired color is finally obtained by color mixture with fluorescence from the phosphor. For example, an LED device capable of emitting white light is configured, and a blue light emitting element is employed.
(Second step)
In this step, first, a paint made of resin, phosphor and volatile organic solvent is prepared. A silicone resin is preferably used as the resin. The reason is that it has excellent heat resistance and good light resistance. In addition to the silicone resin, an epoxy resin, a urethane resin, an acrylic resin, a polycarbonate resin, or the like can also be used.
An appropriate phosphor is selected in consideration of the emission color (emission wavelength) of the light emitting element, the emission color of the finally obtained LED device, and the like. For example, when a LED device capable of emitting white light is configured and a blue light emitting element is employed, a yellow phosphor may be employed. Examples of the yellow phosphor are as described in the first aspect of the present invention. The particle size of the phosphor is, for example, 1 to 25 μm, preferably 1 to 10 μm. By using a phosphor having a small particle diameter, the phosphor concentration (density) of the phosphor layer can be increased.
  The content ratio of the resin and the phosphor in the coating is preferably 60 to 100 parts by weight with respect to 20 parts by weight of the resin. One of the features of the present invention resides in the use of a paint having a high phosphor concentration (density). In addition to this feature, a thin phosphor layer containing a high concentration of phosphor can be formed on the surface of the light emitting element by adopting spray coating as a method for forming the phosphor layer, and thus the luminous intensity of the LED device can be increased. improves.
A suitable volatile organic solvent is employed depending on the resin used. That is, the type of the organic solvent is not particularly limited as long as the resin used can be dissolved and is volatile. When a silicone resin or an epoxy resin is used as the resin, for example, hexane, toluene, xylene, or the like can be used. The solvent is added in a necessary amount so that the paint has a viscosity suitable for spray coating. When using a spray gun, the solvent is added so that the viscosity of the paint is in the range of about 0.01 to 0.10 Pa · s. If a paint having this viscosity range is used, it is easy to control the film thickness, coating range, etc. of the phosphor layer to be formed.
The mixing order of the resin, the phosphor and the solvent is not particularly limited, but it is preferable to add the phosphor after first mixing the resin and the solvent. This mixing order can prevent air from being taken in during the addition and mixing of the phosphors. Therefore, the defoaming operation becomes unnecessary. Further, the association of the phosphors is prevented, and a paint in which the phosphors are uniformly dispersed is obtained.
  Next, a phosphor layer is formed on the top light emitting surface of the light emitting element using the coating material prepared as described above. That is, the top light emitting surface of the light emitting element is coated by spray coating. The spray coating may be performed with a spray gun, for example. Alternatively, spray coating using a micro pencil gun or inkjet spray coating may be used. According to these methods, a selective coating can be applied only to the upper surface of the light emitting element, and paint loss is reduced. The operating conditions are set so that the thickness of the paint layer (phosphor layer) is, for example, 10 μm to 25 μm, preferably 15 μm to 21 μm.
  In addition to the top light-emitting surface, the side surface of the light-emitting element may be coated with the paint. That is, the entire area where light is emitted from the mounted light emitting element may be coated with the paint.
  As described above, in the second step, a paint composed of a resin, a phosphor and a volatile organic solvent is prepared, and a phosphor layer is formed by spray coating using the paint, but the resin diluted with the volatile organic solvent is first used. Alternatively, after coating the upper surface of the light emitting element, only the phosphor powder may be spray coated (powder coating).
(Third step)
In this step, the coated paint is dried and cured. Through this process, the solvent is volatilized and the resin is cured, thereby completing the phosphor layer. In order to form a uniform and defect-free phosphor layer, this step is preferably performed in the following two steps. First, it is dried under conditions of 25 ° C to 70 ° C. In order to volatilize the solvent sufficiently, it is allowed to stand at this temperature condition for about 1 to 2 hours, for example. Next, after raising the temperature to the curing temperature of the resin, the resin is completely cured by holding for a sufficient time (for example, about 1 to 5 hours). When a silicone resin is used for the paint, the curing temperature here is 150 ° C to 170 ° C.
  In spray coating, a mask is not used unlike the printing method using phosphor paste, so that a desired coating can be performed without any trouble even after wire bonding of the light emitting element (that is, in a state where the wire exists). Can do. Moreover, the chromaticity can be confirmed immediately by performing a lighting inspection immediately after coating, and the chromaticity can be finely adjusted on the spot. Furthermore, unlike the printing method, mask alignment and cleaning are unnecessary, and the coating operation usually takes only a few seconds. Therefore, the required time is remarkably shortened compared with the printing method, which is advantageous in terms of manufacturing cost.
(Inspection process)
In one embodiment of the present invention, the emission wavelength of the light-emitting element is inspected between the first step and the second step, and the conditions for the spray coating in the second step are set according to the result of the inspection. By adding this inspection process, the manufacturing yield is improved. The dominant wavelength or peak wavelength is employed as the emission wavelength here. Both of these may be inspected.
In addition, since the coating amount can be individually adjusted in the spray coating, the result of such preliminary inspection can be effectively used for improving the manufacturing yield. On the other hand, such individual adjustment is difficult in the printing method using the phosphor paste.
Hereinafter, the present invention will be described in more detail with reference to examples.
  FIG. 1 shows the configuration of the LED package 1a before the phosphor layer is formed. The LED package 1a in this state is roughly composed of an LED element 2, a mounting substrate 4, a submount substrate 6, and an Au wire. The LED element 2 is a group III nitride compound semiconductor light emitting element (LLO element) manufactured by a laser lift-off method, and emits blue light. As shown in FIG. 4, in the LED element 2, a group III nitride compound semiconductor layer (including a light emitting layer) 2a is laminated on a silicon substrate 2b. The manufacturing method of the LED element 2 will be briefly described. First, a group III nitride compound semiconductor layer is epitaxially grown on a sapphire substrate based on a conventional method such as MOCVD. Thereafter, the sapphire substrate is separated by a laser lift-off method, and then a silicon substrate is attached. A top electrode 2c is formed on the group III nitride compound semiconductor layer.
  As a method for forming a group III nitride compound semiconductor layer, methods such as molecular beam crystal growth (MBE), halide vapor deposition (HVPE), sputtering, ion plating, and electron shower are used. You can also Also, spinel, silicon, silicon carbide, zinc oxide, gallium phosphide, gallium arsenide, magnesium oxide, manganese oxide, or the like can be used instead of sapphire as the growth substrate.
  Next, a procedure for forming a phosphor layer on the top light emitting surface of the LED element 2 will be described with reference to FIGS. First, a phosphor paint is prepared. In this example, the transparent silicone resin was diluted by adding volatile organic solvent hexane. The amount of solvent added was adjusted so that the viscosity was about 0.1 Pa · s so that coating with a spray gun could be performed. Next, with respect to the diluted silicone resin, the YAG having an average particle diameter of about 5 μm is set so that the amount of the silicone resin (the amount before dilution) and the amount of the phosphor are 20:80 by weight ratio (w / w). System phosphor was added and mixed. After mixing the phosphors, the viscosity was measured. If the viscosity was 0.1 Pa · s or more, a solvent was added.
  Subsequently, the prepared phosphor coating material was set on a spray gun, and the phosphor coating material was sprayed from directly above the LED element 2 (spray coating). The coating thickness was adjusted for each LED package within the range of 15 to 21 μm in consideration of the above inspection results. The air pressure, the distance from the spray gun outlet to the LED element 2 and the rotation speed were fixed, and the thickness was controlled by the spraying time.
  The state of the LED package 1b after spray coating is shown in FIG. As indicated by reference numeral 9a in FIG. 2, in the phosphor layer 9 immediately after spray coating, the phosphor 10 is dispersed in the silicone resin 12 diluted with a solvent, and the phosphor concentration (density) is relatively low. In this embodiment, the entire exposed surface (upper light emitting surface and side surface) of the LED element 2 is covered with the phosphor layer 9, but the phosphor layer is formed only on the upper light emitting surface of the LED element 2. Is also possible. In addition, the coating on the top light emitting surface and the side surface of the LED element 2 may be performed in separate steps, in which case the phosphor layer formed on the top light emitting surface is formed on the side surface. The thickness of the phosphor layer to be adjusted can be adjusted individually.
  The LED package 1b after spray coating was allowed to stand for 1 hour under a temperature condition of about 65 ° C. to 70 ° C. and sufficiently dried. As a result, the solvent in the phosphor coating is volatilized. Since the volume of the solvent component is reduced, the thickness of the phosphor layer becomes thinner than that immediately after coating. Next, the silicone resin was completely cured by maintaining for about 3 hours under a temperature condition of 150 ° C. to 170 ° C. As shown in FIG. 3, in the fully cured LED package 1c, the surface of the LED element 2 is coated with the phosphor layer 12 made of only the phosphor 10 and the silicone resin 13 (the phosphor indicated by reference numeral 12a). (See enlarged view of layer 12). The final film thickness of the phosphor layer 12 was about 18 μm.
  After the phosphor layer 12 is formed, a cover is put on the mounting surface side of the LED element 2 as necessary. Moreover, you may decide to provide a reflector or a support body so that the LED element 2 may be surrounded. In that case, you may decide to fill the sealing material (for example, silicone resin) into the part enclosed by the reflector or the support body.
In the LED package 1c manufactured through the above steps, a part of the light emitted from the upper light emitting surface of the LED element 2 is color-converted by the phosphor in the phosphor layer 12, so that the white light is finally obtained. Is obtained.
In the LED package 1c, the thin phosphor layer 12 containing the phosphor 10 at a high concentration is formed on the upper light emitting surface of the LED element 2, so that efficient light conversion is performed and light loss is achieved. Is suppressed, and high-luminance (high brightness) white light is emitted. In addition, by adopting the LLO element, light conversion by the phosphor 10 on the side of the LED element 2 can be substantially ignored, and color mixing unevenness is extremely reduced. Furthermore, by examining the emission wavelength of the LED package 1a prior to spray coating and forming a phosphor layer with an appropriate film thickness, variation in the emission color between the LED packages 1c finally obtained can be suppressed, Manufacturing yield is improved.
  The present invention is applicable to various light-emitting devices that obtain a desired emission color by converting a part of light from a light-emitting element with a phosphor.
The present invention is not limited to the description of the embodiments and examples of the invention described above. Various modifications may be included in the present invention as long as those skilled in the art can easily conceive without departing from the description of the scope of claims.
The contents of papers, published patent gazettes, patent gazettes, and the like specified in this specification are incorporated by reference in their entirety.
The schematic cross section which shows the LED package (state before fluorescent substance layer formation) of an Example. The schematic cross section which shows the LED package (state immediately after spray coating) of an Example. The schematic cross section which shows the LED package (state after fluorescent substance layer hardening) of an Example. Structure of an LLO element used for an LED package.
Explanation of symbols
1a LED package 1b before phosphor layer formation LED package 1c immediately after spray coating LED package 2 after phosphor layer curing 2 LED element (LLO element)
2a Group III nitride compound semiconductor layer 2b Silicon substrate 2c Upper surface electrode 3 Au wire 4 Mounting substrate 5 Electrode pattern 6 on mounting substrate Submount substrate 7 Electrode pattern 8 on submount substrate Electrode pad 9 Phosphor immediately after spray coating Layer 9a Partial enlarged view of phosphor layer immediately after spray coating 10 Phosphor 11 Silicone resin diluted with solvent 12 Phosphor layer after curing 12a Partial enlarged view of phosphor layer after curing 13 Silicone resin

Claims (13)

  1.   An LED device comprising: a group III nitride compound semiconductor light emitting device manufactured by a laser lift-off method; and a phosphor layer formed on a top light emitting surface of the light emitting device by spray coating.
  2.   The LED device according to claim 1, wherein the phosphor layer has a thickness of 10 μm to 25 μm.
  3.   The LED device according to claim 1 or 2, wherein a particle size of the phosphor contained in the phosphor layer is 1 to 10 µm.
  4.   The LED device according to claim 1, wherein the LED device emits white light.
  5. The light emitting element emits blue light;
    The LED device according to claim 4, wherein the phosphor layer contains a phosphor that is excited by light from the light emitting element and emits yellowish fluorescence.
  6. A first step of preparing a group III nitride compound semiconductor light emitting device mounted on a substrate;
    A second step of preparing a paint composed of a resin, a phosphor and a volatile organic solvent, and coating the paint on the top light emitting surface of the light emitting element by spray coating;
    A third step of drying and curing the coated paint;
    A method for manufacturing an LED device, comprising:
  7.   The manufacturing method according to claim 6, wherein the group III nitride compound semiconductor light emitting device is a light emitting device manufactured by a laser lift-off method.
  8.   The production method according to claim 6 or 7, wherein a content ratio of the resin and the phosphor in the coating is 60 to 100 parts by weight of the phosphor with respect to 20 parts by weight of the resin.
  9. The resin is a silicone resin;
    The manufacturing method according to any one of claims 6 to 8, wherein the third step includes a step of volatilizing a volatile organic solvent in the paint and a step of curing the resin in the paint.
  10.   The light emitting wavelength of the light emitting element is inspected between the first step and the second step, and the condition of the spray coating in the second step is set according to the result of the inspection. The manufacturing method according to claim 1.
  11.   The manufacturing method according to claim 6, wherein the LED device emits white light.
  12. The light emitting element emits blue light;
    The manufacturing method according to claim 11, wherein the phosphor layer contains a phosphor that is excited by light from the light emitting element and emits yellowish fluorescence.
  13.   The LED device manufactured by the manufacturing method as described in any one of Claims 6-12.
JP2007245423A 2007-09-21 2007-09-21 Led apparatus, and method of manufacturing the same Pending JP2009076749A (en)

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KR101041068B1 (en) * 2009-06-29 2011-06-13 주식회사 프로텍 Method of manufacturing light emitting diode using submount substrate
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JP2013521652A (en) * 2010-03-03 2013-06-10 クリー インコーポレイテッドCree Inc. System and method for applying an optical material to an optical element
JP2012044131A (en) * 2010-08-23 2012-03-01 ▲さん▼圓光電股▲ふん▼有限公司 Method of manufacturing light emitting device
CN102148139A (en) * 2010-12-31 2011-08-10 东莞市中镓半导体科技有限公司 Improved method for eliminating residual stress of GaN epitaxial wafer by laser quasi-stripping
US9508904B2 (en) 2011-01-31 2016-11-29 Cree, Inc. Structures and substrates for mounting optical elements and methods and devices for providing the same background
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JP2013138209A (en) * 2011-12-27 2013-07-11 Advanced Optoelectronic Technology Inc Light-emitting diode package manufacturing method
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JP2014146783A (en) * 2013-01-29 2014-08-14 Lg Innotek Co Ltd Lamp unit
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JP2015142011A (en) * 2014-01-29 2015-08-03 スタンレー電気株式会社 Semiconductor light-emitting device and method for manufacturing the same
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