KR101041068B1 - Method of manufacturing light emitting diode using submount substrate - Google Patents

Method of manufacturing light emitting diode using submount substrate Download PDF

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Publication number
KR101041068B1
KR101041068B1 KR1020090058334A KR20090058334A KR101041068B1 KR 101041068 B1 KR101041068 B1 KR 101041068B1 KR 1020090058334 A KR1020090058334 A KR 1020090058334A KR 20090058334 A KR20090058334 A KR 20090058334A KR 101041068 B1 KR101041068 B1 KR 101041068B1
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KR
South Korea
Prior art keywords
sub
mount substrate
silicon
substrate
led chip
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KR1020090058334A
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Korean (ko)
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KR20110000976A (en
Inventor
홍승민
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주식회사 프로텍
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Priority to KR1020090058334A priority Critical patent/KR101041068B1/en
Priority to CN2010102144292A priority patent/CN101937961B/en
Priority to TW099120844A priority patent/TWI392123B/en
Publication of KR20110000976A publication Critical patent/KR20110000976A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

The present invention provides a chip attaching method for attaching a plurality of LED chips to a sub-mount substrate, respectively; A phosphor coating step of applying silicon mixed with a fluorescent material to the sub-mount substrate and the LED chip on which the chip attaching step is completed; A substrate cutting step of cutting the sub-mount substrate on which the phosphor coating step is completed, for each LED chip unit; And a packaging step of attaching the sub-mount substrate on which the substrate cutting step is completed to the package and electrically connecting the package to the package.

Description

METHODS OF MANUFACTURING A LIGHT EMITTING DIODE USING A SUB MOUNT SUBSTRATE {METHOD OF MANUFACTURING LIGHT EMITTING DIODE USING SUBMOUNT SUBSTRATE}

The present invention relates to a method of manufacturing a light emitting diode using a sub-mount substrate, and more particularly, in a method of manufacturing an LED device by packaging an LED chip, attaching the LED chip on the sub-mount substrate using a separate sub-mount substrate. The present invention relates to a light emitting diode manufacturing method using a sub-mount substrate for manufacturing a light emitting diode by performing a process of applying a phosphor in one state.

A general method of manufacturing a light emitting diode device is as follows. First, the LED chip 1 is manufactured using a material such as sapphire, and then each LED chip 1 is attached to the inside of the package 2 as shown in FIG. 1. Next, the LED chip 1 and the package 2 are electrically connected by bonding the wires 4. Next, silicon 3 mixed with a fluorescent material is coated around the LED chip 1. By applying the fluorescent material in this way it is possible to adjust the characteristics of the light generated in the LED chip (1). In general, the optical characteristics of the LED device is expressed as a value on the color coordinate of the 1931 International Commission on Illumination (CIE).

The color coordinate value may be adjusted by adjusting the thickness of the semiconductor layer in the manufacturing process of the LED chip, or by controlling the amount of fluorescent material to be applied, thereby manufacturing an LED device having optical characteristics having a desired color coordinate.

However, as can be seen in Figure 1, after mounting the LED chip (1) in the package, each package (2) must be dispensed with silicon (3) mixed with a fluorescent material for each package 2 is a cumbersome process and improve productivity There is something difficult to do. In addition, it is also difficult to apply the correct amount of silicon for each LED device.

As can be seen in FIG. 1, since the thickness of the silicon 3 around the LED chip 1 in the package 2 is not constant and is different for each position, the optical properties of the LED element are different. There is a problem that is not excellent. In other words, the light having a uniform color coordinate value is generated at the position close to the LED device without any difference in the color coordinate value.However, when the color coordinate is measured at a distance far from the LED device, the color coordinate value is different for each irradiated area. have. That is, color separation occurs.

On the other hand, considering the light emitting direction of the LED chip, the LED chip can be divided into two types as shown in Figs. That is, as shown in FIG. 2, there is an LED chip 5 that generates light in the thickness direction, and as shown in FIG. 3, there is an LED chip 6 that generates light in the width direction.

In particular, in the case of the LED chip 6 as shown in FIG. 3, when the fluorescent material is applied in the same manner as shown in FIG. 1, the color separation phenomenon as described above occurs more severely.

The present invention has been made to solve the above-described problems, and an object of the present invention is to improve the productivity of a method of manufacturing an LED device by improving a process of applying silicon mixed with fluorescent material to an LED chip.

In addition, the present invention by uniformly coating the silicon mixed with a fluorescent material on the surface of the LED chip, regardless of the position irradiated to the light generated from the LED chip has a uniform color coordinate value and does not occur color separation phenomenon LED It is an object of the present invention to provide a method for manufacturing an element.

In order to achieve the above object, the present invention, a chip attaching step of attaching a plurality of LED chips to the sub-mount substrate, respectively; A phosphor coating step of applying silicon mixed with a fluorescent material to the sub-mount substrate and the LED chip on which the chip attaching step is completed; A substrate cutting step of cutting the sub-mount substrate on which the phosphor coating step is completed, for each LED chip unit; And a packaging step of attaching the sub-mount substrate on which the substrate cutting step is completed to the package and electrically connecting the package to the package.

The light emitting diode manufacturing method using the sub-mount substrate of the present invention has the effect of improving the productivity of the LED manufacturing method by improving the process of applying silicon containing a fluorescent material to the LED chip.

In addition, the present invention has the effect of improving the optical characteristics of the LED device by making the thickness of the silicon applied to the LED chip uniform.

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

4 is a flowchart illustrating an example of a method of manufacturing a light emitting diode using a submount substrate according to the present invention, and FIGS. 5 to 9 illustrate LED elements according to the method of manufacturing a light emitting diode using the submount substrate illustrated in FIG. 4. It is a figure for demonstrating the manufacturing process.

In order to implement the LED manufacturing method using the sub-mount substrate 20 according to the present invention, first, the LED chip 10 is prepared. The LED chip 10 has a form in which electrodes are formed on a commonly used sapphire substrate, and is cut in each LED chip 10.

As described above, the chip attaching step S100 is performed to attach the respective LED chips 10 to the sub-mount substrate 20 as shown in FIGS. 5 and 6. The submount substrate 20 is formed of a Si substrate. Flip chip electrodes (bumps) may be formed on the sub-mount substrate so that the LED chip is attached to the sub-mount substrate in a flip-chip manner, and electrode pads on the sub-mount substrate so that the LED chip and the sub-mount substrate may be wire bonded to each other. May be formed. Alternatively, the electrode may not be formed on the sub-mount substrate 20, and the LED chip 10 may only be die attached.

In this state, as shown in FIGS. 7 and 8, the phosphor coating step (S200) of applying the silicon 30 mixed with the fluorescent material on the upper surfaces of the sub-mount substrate 20 and the LED chip 10 is performed. . The phosphor coating step S200 may be applied by spraying the silicon 30. Moreover, it can also apply | coat by the method using a common resin dispenser. In applying the silicon 30 in this manner, it may be applied in the same manner as shown in Figs. That is, first, a dam edge 31 of the wafer is coated by using a relatively viscous dam silicon 31 to form dams 31 and then a relatively low viscosity 32 in the region surrounded by the dam 31. The phosphor coating step S200 may be performed by applying the silicon 30. In such a method, the phosphor is applied to the required portion of the sub-mount substrate 20 only, and the phosphor is applied in a short time without distinguishing the region so that the silicon 30 is not applied to the other portion (S200). There is an advantage that can be done. In addition, after the liquid silicon 30 is applied in a plurality of droplets, the droplets flow to the periphery, and the uniform silicon 30 is applied to the surfaces of the sub-mount substrate 20 and the LED chip 10. ) Has the advantage of forming a film. In addition, the silicon 30 is applied to the surface of the sub-mount substrate 20 and the LED chip 10 formed as described above, so that the thickness of the silicon 30 coated on the upper surface of the LED chip 10 is uniform or the LED chip ( There is an advantage that the thickness of the silicon 30 applied to the side of 10) can be made uniform. As described above, by uniformizing the thickness of the silicon 30 on the surface of the LED chip 10, the advantage that the characteristics (coordinates on the color coordinate system) generated in the LED chip 10 can be made constant regardless of the light emitting point is provided. have. As a result, there is an advantage that the light emitting characteristics of the LED chip 10 can be easily maintained at a constant level. In addition, since the thickness of the coated silicon 30 (amount of coated fluorescent material) is uniform regardless of the position of the LED chip 10, color separation of light is generated even at a distance away from the LED chip 10. There is an advantage that does not occur.

Next, an inspection step (S300) of inspecting optical characteristics of each LED chip 10 is performed. In the inspection step S300, a voltage is applied to each LED chip 10 using a device such as a probe in a state where the LED chip 10 is mounted on the sub-mount substrate 20, and then the LED chip 10 is applied to the LED chip 10. Examine the characteristics of the light that is generated. As described above, when the optical characteristics of the LED chip 10 are inspected using the probe, the process may be performed after first peeling off the silicon 30 of the electrode portion to be contacted by the probe.

The inspection item is a value on the color coordinate of light generated from the LED chip 10. The color coordinate value of the light generated by the LED chip 10 is affected by factors such as the thickness of the semiconductor layer of the LED chip 10 and the thickness of the silicon 30 mixed with the fluorescent material. As a result of performing the inspection step S300, when the optical characteristics of the light generated from the LED chip 10 are different from the predetermined value, the thickness of the silicon 30 capable of correcting the optical characteristics is calculated.

Based on the result calculated as above, a silicon replenishment step S400 is performed. In the silicon replenishing step (S400), the silicon 30 is further applied to an area where the thickness of the silicon 30 needs to be increased to increase the thickness of the silicon 30 as necessary.

As such, after the silicone replenishing step (S400) is completed, the operation of curing the silicone 30 is performed. Since the silicon 30 is cured as time passes, the next work may be performed after waiting a predetermined time, or the work speed may be increased by heating the sub-mount substrate 20 to improve the curing speed of the silicon 30. .

Next, a substrate cutting step (S500) of cutting the sub-mount substrate 20 by each LED chip 10 is performed. After applying the silicon 30 in a state where the LED chip 10 is mounted on the sub-mount substrate 20, the sub-mount substrate 20 is cut to package each LED chip 10.

Next, as shown in FIG. 9, the cut-out sub-substrate 20 is attached to the package 40 and a packaging step (S600) of electrically connecting the package 40 is performed. After attaching the sub-mount substrate 20 to the package 40 as shown in FIG. 9, the electrode of the LED chip 10 and the electrode of the package 40 are connected by wires 41 to be bonded. The packaging step (S600) can be performed by the method. In some cases, the packaging step S600 may be performed by wire-bonding an electrode formed on the sub-mount substrate and an electrode of the package, or may be electrically connected to the sub-mount substrate and the package by a flip chip method. Meanwhile, when wire bonding the LED chip 10 or the sub-mount substrate 20 and the package 40, the silicon 30 covered at the bonding point is peeled off and wire bonding is performed.

Thus, after the packaging is completed, the connection state of the wire 41, whether the LED chip 10 is emitted, the optical characteristics of the light emitted from the LED chip 10, and the like, and then inspected each package ( 40) to complete the product by performing the taping step (S700) of wrapping the tape. In addition, in the taping step (S700), the inspection step (S300) is performed before, except for the LED device determined as a defective package.

Through the above process, the LED device according to the present invention is completed.

According to the method as described above, since the silicon 30 can be applied to the plurality of LED chips 10 mounted on the sub-mount substrate 20 in a batch, silicon (for each package 40 after packaging) Compared with the case of applying 30), the productivity can be dramatically improved.

In addition, since the thickness of the silicon 30 applied regardless of whether the light emitting direction of the LED chip 10 in the thickness direction or the width direction can be managed uniformly compared to the LED device described with reference to FIG. It can dramatically improve the characteristics of light. Therefore, the color separation phenomenon can be significantly prevented as compared to the LED device described with reference to FIG. 1.

In addition, by performing the inspection step (S300) in the state mounted on the sub-mount substrate 20 in advance by selecting the defective, by preventing the process after the substrate cutting step (S500) for the defective product to prevent the process loss. There are advantages to it.

The present invention has been described above with reference to preferred embodiments, but the scope of the present invention is not limited to the forms described above and illustrated in the drawings.

For example, it was described that the wire bonding is performed after the silicon 30 at the bonding point is peeled off before the packaging step S600, but prior to performing the phosphor coating step S200, the masking is performed on the electrode in advance. In this way, a light emitting diode manufacturing method using the sub-mount substrate 20 may be performed so that phosphors are not applied to the electrode.

In addition, in the former phosphor coating step (S200), the dam 31 is formed on the edge of the sub-mount substrate 20, and then the silicon 30 having low viscosity is applied to the region 32 surrounded by the dam 31. As described above, the phosphor coating step S200 may be performed by spraying the silicon 30 entirely on the sub-mount substrate 20 without forming the dam 31. In addition, the phosphor coating step (S200) may be performed by using a screw-type resin pump or by using a resin pump for dispensing resin in droplets without applying the silicon 30 by a spray method.

In addition, it was described above that after performing the inspection step (S300) to perform the silicone replenishing step (S400) to replenish and apply the silicone 30 to the portion where the thickness of the silicone 30 is insufficient, such a silicone replenishing step ( S400) may not be performed. That is, only the inspection step S300 may be performed to determine only the optical characteristics of each LED chip 10, the result may be stored, and the substrate cutting step S500 may be immediately performed. The LED chip 10 determined to be inadequate optical characteristics in the inspection step S300 may be packaged except in the packaging step.

1 is a cross-sectional view of an LED device manufactured by a conventional LED manufacturing method.

2 and 3 are cross-sectional views illustrating light emitting directions of LED chips.

4 is a flowchart illustrating an example of a method of manufacturing a light emitting diode using the sub-mount substrate according to the present invention.

FIG. 5 is a plan view of a submount substrate for manufacturing an LED device by the light emitting diode manufacturing method using the submount substrate shown in FIG. 4.

FIG. 6 is a partial cross-sectional view of the sub-mount substrate shown in FIG. 5.

FIG. 7 is a plan view illustrating a process of applying silicon to the sub-mount substrate illustrated in FIG. 5.

8 is a partial cross-sectional view of the sub-mount substrate shown in FIG. 7.

FIG. 9 is a cross-sectional view of an LED device manufactured by a light emitting diode manufacturing method using the sub-mount substrate shown in FIG. 4.

<Description of the symbols for the main parts of the drawings>

S100: chip attaching step S200: phosphor applying step

S300: Inspection Step S400: Silicone Replacement Step

S500: substrate cutting step S600: packaging step

S700: Taping Step 10: LED Chip

20: sub-mount substrate 30: silicon

40: Package 41: Wire

Claims (9)

A chip attaching step of attaching a plurality of LED chips to the sub-mount substrate, respectively; A phosphor coating step of applying silicon mixed with a fluorescent material to the sub-mount substrate and the LED chip on which the chip attaching step is completed; A substrate cutting step of cutting the sub-mount substrate on which the phosphor coating step is completed, for each LED chip unit; And And attaching the sub-mount substrate on which the substrate cutting step is completed to the package and electrically connecting the package to the package. The phosphor coating step may be performed by applying a highly viscous dam silicon to the edge of the substrate to form a dam, then applying a silicon having a viscosity less than that of the dam to the central portion of the substrate, and the silicon flows uniformly. Method of manufacturing a light emitting diode using a sub-mount substrate, characterized in that performed. The method of claim 1, The sub-mount substrate is a light emitting diode manufacturing method using a sub-mount substrate, characterized in that the electrode is formed on a substrate of Si material. The method according to claim 1 or 2, An inspection step of inspecting optical characteristics of each LED chip in which the phosphor coating step is completed; Light-emitting diode manufacturing method using a sub-mount substrate, characterized in that it further comprises. The method of claim 3, And a tapering step of wrapping the LED device, which is determined to be defective, by performing the inspection step. The method of manufacturing a light emitting diode using a sub-mount substrate further comprising a. The method of claim 3, After performing the inspection step, if it is determined that the coating thickness of the silicon is thin silicon supplementary step of replenishing and applying the silicon; LED manufacturing method using a sub-mount substrate further comprising. The method of claim 1, The chip attaching step may include attaching LED chips formed in a flip chip shape to a sub-mount substrate. The method of claim 1, In the packaging step, a method of manufacturing a light emitting diode using a sub-mount substrate, characterized in that the silicon is applied to the upper surface of the electrode of the LED chip or sub-mount substrate, and the wire bonding to the electrode and electrically connected to the package. The method of claim 1, The phosphor coating step, the method of manufacturing a light emitting diode using a sub-mount substrate, characterized in that the coating by spraying the silicon (spray). delete
KR1020090058334A 2009-06-29 2009-06-29 Method of manufacturing light emitting diode using submount substrate KR101041068B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020090058334A KR101041068B1 (en) 2009-06-29 2009-06-29 Method of manufacturing light emitting diode using submount substrate
CN2010102144292A CN101937961B (en) 2009-06-29 2010-06-25 Method for manufacturing a light-emitting diode by using a secondary-adhesion substrate
TW099120844A TWI392123B (en) 2009-06-29 2010-06-25 Method of manufacturing light emitting diode using submount substrate

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Application Number Priority Date Filing Date Title
KR1020090058334A KR101041068B1 (en) 2009-06-29 2009-06-29 Method of manufacturing light emitting diode using submount substrate

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KR20110000976A KR20110000976A (en) 2011-01-06
KR101041068B1 true KR101041068B1 (en) 2011-06-13

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TWI442496B (en) * 2011-03-01 2014-06-21 Lextar Electronics Corp Light engine and method for manufacturing the same
KR101326060B1 (en) * 2012-09-11 2013-11-07 한국광기술원 Grading system and method of sheets for led element mounting

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KR100665121B1 (en) * 2005-02-28 2007-01-09 삼성전기주식회사 Method of producing wavelength-converted light emitting diode package
JP2009076749A (en) * 2007-09-21 2009-04-09 Toyoda Gosei Co Ltd Led apparatus, and method of manufacturing the same

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Publication number Priority date Publication date Assignee Title
JP2000183404A (en) * 1998-12-14 2000-06-30 Fuji Photo Film Co Ltd Light emitting element array and method and apparatus for bonding it
JP4024994B2 (en) * 2000-06-30 2007-12-19 株式会社東芝 Semiconductor light emitting device
KR100587017B1 (en) * 2005-02-23 2006-06-08 삼성전기주식회사 Light emitting diode package and method for manufacturing the same
JP2008091831A (en) * 2006-10-05 2008-04-17 Toshiba Corp Submount substrate for led, manufacturing method thereof, and light emitting device using the substrate
JP2009117814A (en) * 2007-10-29 2009-05-28 William S Chan Multi-junction multi-spectral solar converter

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
KR100665121B1 (en) * 2005-02-28 2007-01-09 삼성전기주식회사 Method of producing wavelength-converted light emitting diode package
JP2009076749A (en) * 2007-09-21 2009-04-09 Toyoda Gosei Co Ltd Led apparatus, and method of manufacturing the same

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Publication number Publication date
KR20110000976A (en) 2011-01-06
CN101937961A (en) 2011-01-05
CN101937961B (en) 2013-05-08
TWI392123B (en) 2013-04-01
TW201101543A (en) 2011-01-01

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