CN101937961B - Method for manufacturing a light-emitting diode by using a secondary-adhesion substrate - Google Patents
Method for manufacturing a light-emitting diode by using a secondary-adhesion substrate Download PDFInfo
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- CN101937961B CN101937961B CN2010102144292A CN201010214429A CN101937961B CN 101937961 B CN101937961 B CN 101937961B CN 2010102144292 A CN2010102144292 A CN 2010102144292A CN 201010214429 A CN201010214429 A CN 201010214429A CN 101937961 B CN101937961 B CN 101937961B
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- emitting diode
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- adhesion substrate
- backlight unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
A method for manufacturing a light-emitting diode by using a secondary-adhesion substrate include: a chip adhering step of separately adhering a plurality light-emitting diode chips to the secondary-adhesion substrate; a fluorescent body coating step of coating silicon mixed with fluorescent material to the secondary-adhesion substrate and the light-emitting diode chips after the chip adhering step; a substrate cutting step of cutting the secondary-adhesion substrate and each light-emitting diode chip by unit after the fluorescent body coating step; and a packaging step of adhering the secondary-adhesion substrate after the substrate cutting step to a carrier tool to be electrically connected with the carrier tool.
Description
Technical field
The present invention relates to a kind of time method of adhesion Substrate manufacture light-emitting diode of using, more specifically, relate to a kind of time method of adhesion Substrate manufacture light-emitting diode of using, it is adhered to light-emitting diode chip for backlight unit (LEDchip) under state on time adhesion substrate (submount substrate), after carrying out the phosphor body application step, encapsulate and make light-emitting diode.
Background technology
The manufacture method of existing light-emitting diode is as follows.At first, make light-emitting diode chip for backlight unit 1 with the material of sapphire etc.Then, as shown in Figure 1, each light-emitting diode chip for backlight unit 1 is adhered (attaching) in carrier 2 inside.Then, light-emitting diode chip for backlight unit 1 and carrier 2 are electrically connected with wire 4.Come again, with the silicon 3 that mixes fluorescent substance coat light-emitting diode chip for backlight unit 1 around.The fluorescent substance of this coating be used for to be regulated the optical characteristics of the light that light-emitting diode chip for backlight unit 1 produces.In general, with international lighting (the International Commission on Illumination of association in 1931; CIE) value on color specification system represents the optical characteristics of light-emitting diode.
In the processing procedure of making light-emitting diode chip for backlight unit, see through the adjusting of semiconductor layer thickness or the methods such as adjusting of fluorescent substance coating weight, can produce the light-emitting diode with required color specification system optical characteristics.
But existing method for manufacturing light-emitting as shown in Figure 1 after light-emitting diode chip for backlight unit 1 being installed on carrier 2 inside, is sent respectively the silicon 3 that mixes fluorescent substance in carrier 2, causes processing procedure loaded down with trivial details and be difficult to increase productivity.And, be difficult to the silicon of correctly measuring is coated each light-emitting diode.
In addition, existing method for manufacturing light-emitting as shown in Figure 1, the variable thickness that is positioned at light-emitting diode chip for backlight unit 1 silicon 3 on every side in carrier 2 causes, and namely there is respectively different thickness different positions, and this makes the optical characteristics of light-emitting diode not good.In other words, can produce no color differnece on the whole from light-emitting diode in-plant position and light with homogeneous color specification system value.But if measuring color specification system from light-emitting diode remote place, the color specification system value will change along with the difference of irradiation area, thereby produce the color separation phenomenon.
In addition, as Fig. 2 and shown in Figure 3, light-emitting diode chip for backlight unit can be divided into according to light emission direction: the light-emitting diode chip for backlight unit 5 that past thickness direction as shown in Figure 2 is luminous; And the luminous light-emitting diode chip for backlight unit 6 of past Width as shown in Figure 3.
Especially, if to as shown in Figure 3 light-emitting diode chip for backlight unit 6 with as shown in Figure 1 method coating fluorescent substance, will produce larger color separation phenomenon.
Summary of the invention
The present invention In view of the foregoing completes, and its purpose is to provide: a kind of seeing through improved the processing procedure that the silicon that will mix fluorescent substance is coated light-emitting diode chip for backlight unit, can improve the manufacture method of the productivity of light-emitting diode; And a kind of surface of coating equably light-emitting diode chip for backlight unit through the silicon that will mix fluorescent substance, thereby no matter any position that the illumination that light-emitting diode chip for backlight unit produces is mapped to, all can have the color specification system value of homogeneous, and can not produce the manufacture method of the light-emitting diode of color separation phenomenon.
[mode that addresses the above problem]
For achieving the above object, the method for use provided by the present invention time adhesion Substrate manufacture light-emitting diode, comprising: chip adhesion step is adhered to respectively time adhesion substrate with a plurality of light-emitting diode chip for backlight unit; The phosphor body application step coats with the silicon that mixes fluorescent substance inferior adhesion substrate and the light-emitting diode chip for backlight unit that chip adhesion step is completed; The substrate cutting step, the inferior adhesion substrate that the phosphor body application step is completed cuts off take each light-emitting diode chip for backlight unit as unit; And encapsulation step, the inferior adhesion substrate that the substrate cutting step is completed is adhered to carrier and is electrically connected with carrier.
[effect of invention]
According to the present invention, see through and improve the processing procedure that the silicon that will mix fluorescent substance is coated light-emitting diode chip for backlight unit, can improve the productivity of method for manufacturing light-emitting.
And, according to the present invention, see through the even thickness of the silicon that will coat light-emitting diode chip for backlight unit, can improve the optical characteristics of light-emitting diode.
Description of drawings
Fig. 1 is the profile with a kind of light-emitting diode of existing method for manufacturing light-emitting made.
Fig. 2 and Fig. 3 are the profiles of the light emission direction of explanation light-emitting diode chip for backlight unit.
Fig. 4 is a kind of time block diagram of the method for adhesion Substrate manufacture light-emitting diode of using of the embodiment of the present invention.
Fig. 5 is the vertical view with the inferior adhesion substrate of the method made light-emitting diode of use shown in Figure 4 time adhesion Substrate manufacture light-emitting diode.
Fig. 6 is the part sectioned view of inferior adhesion substrate shown in Figure 5.
Fig. 7 is the vertical view of the silicon coating process of inferior adhesion substrate shown in Figure 5.
Fig. 8 is the part sectioned view of inferior adhesion substrate shown in Figure 7.
Fig. 9 is the profile with the light-emitting diode of the method made of use shown in Figure 4 time adhesion Substrate manufacture light-emitting diode.
[main element symbol description]
S100: chip adhesion step
S200: phosphor body application step
S300: testing procedure
S400: silicon replenish step
S500: substrate cutting step
S600: encapsulation step
S700: packaging step
1,5,6,10: light-emitting diode chip for backlight unit
20: inferior adhesion substrate
3,30: silicon
31: the dam
32: the part of being surrounded by the dam
2,40: carrier
4,41: wire
Embodiment
Below, the preferred embodiment that present invention will be described in detail with reference to the accompanying.
Fig. 4 is the block diagram of the method for the inferior Substrate manufacture light-emitting diode of adhering of the use of the embodiment of the present invention; Fig. 5 to Fig. 9 makes the schematic diagram of the processing procedure of light-emitting diode with the method for use shown in Figure 4 time adhesion Substrate manufacture light-emitting diode.
Make the method for light-emitting diode in order to implement use of the present invention time adhesion substrate 20, at first prepare light-emitting diode chip for backlight unit 10.Light-emitting diode chip for backlight unit 10 is to form the general light-emitting diode chip for backlight unit that electrode forms on sapphire substrate, and cuts off the kenel of (dicing) take each light-emitting diode chip for backlight unit 10 as unit.
Then, as Fig. 5 and shown in Figure 6, carry out chip adhesion step S100, be about to each light-emitting diode chip for backlight unit 10 and be adhered to time adhesion substrate 20.Inferior adhesion substrate 20 is made with silicon material substrate.In order to make light-emitting diode chip for backlight unit be adhered to time adhesion substrate in the mode of flip-chip (flip chip), flip-chip electrode (being projection) can be formed at time adhesion substrate.And, engage with wire with time adhesion substrate in order to make light-emitting diode chip for backlight unit, electronic pads can be formed at time adhesion substrate.Perhaps, do not form electrode in inferior adhesion substrate 20, light-emitting diode chip for backlight unit 10 adhesions (die attaching) also can.
Then, as Fig. 7 and shown in Figure 8, carry out phosphor body application step S200, the silicon 30 that is about to mix fluorescent substance is coated on time adhesion substrate 20 and light-emitting diode chip for backlight unit 10.In phosphor body application step S200, the mode of silicon 30 with spraying (spray) can be coated with, also can use the mode of general resin dispensing devices to be coated with.Silicon 30 coating process described above can carry out as Fig. 7 and mode shown in Figure 8.At first, the silicon 30 of high viscosity is coated the peripheral part of wafer (wafer) and formed dam (dam) 31, then, the silicon 30 that viscosity is lower is coated the part 32 of being surrounded by dam 31, to carry out phosphor body application step S200.Thus, can easily distinguish the part of need silicon-coating 30 on inferior adhesion substrate 20 and other parts of non-silicon-coating 30, and can carry out phosphor body application step S200 within the very fast time.And, with after most drop (droplet) states coatings, allow drop flow toward periphery the silicon 30 of liquid state, can form (uniform) silicon 30 films uniformly on the surface of inferior adhesion substrate 20 and light-emitting diode chip for backlight unit 10.And, method described above is coated silicon 30 on the surface of time adhesion substrate 20 and light-emitting diode chip for backlight unit 10, the even thickness of coating the silicon 30 above light-emitting diode chip for backlight unit 10 can be made, and the even thickness of the silicon 30 of coating light-emitting diode chip for backlight unit 10 sides can be made.Thus, by the even thickness of the silicon 30 on light-emitting diode chip for backlight unit 10 surfaces, no matter the optical characteristics (being the value on color specification system) of the light that light-emitting diode chip for backlight unit 10 produces all can be stably kept in any luminous place.Thereby, can easily the characteristics of luminescence of light-emitting diode chip for backlight unit 10 be kept certain level.And no matter due to any position of light-emitting diode chip for backlight unit 10, the thickness of the silicon 30 that is coated with (amount of the fluorescent substance of coating) is all homogeneous, so also can not produce the color separation phenomenon from light-emitting diode chip for backlight unit 10 remote position.
Then, carry out testing procedure S300, the optical characteristics of namely testing each light-emitting diode chip for backlight unit 10.In testing procedure S300, be installed at light-emitting diode chip for backlight unit 10 under the state of time adhesion substrate 20, use the device such as probe (probe) that voltage is put on each light-emitting diode chip for backlight unit 10, to test the optical characteristics of the light that light-emitting diode chip for backlight unit 10 produced.Above-mentioned test the optical characteristics of light-emitting diode chip for backlight unit 10 with probe in, can be first part be coated after silicon 30 above electrode peels off, carry out testing procedure S300.
In test event, the value on the color specification system of the light that light-emitting diode chip for backlight unit 10 produces is main project.The color specification system value of the light that light-emitting diode chip for backlight unit 10 produces is affected by the factors such as thickness of the silicon 30 of the thickness of the layer of light-emitting diode chip for backlight unit 10 semiconductor layers, mixing fluorescent substance.According to the result of carrying out as above-mentioned testing procedure S300, if the optical characteristics of the light that light-emitting diode chip for backlight unit 10 produces is different from set point, but the thickness of the silicon 30 of calculating revisal optical characteristics.
With as the above-mentioned result of calculating, carry out silicon replenish step S400, namely for being necessary that the zone that increases silicon 30 thickness carries out further silicon 30 coatings, make the thickness of silicon 30 increase to desired thickness.
After silicon replenish step S400 completes, carry out the sclerosis operation of silicon 30.Silicon 30 can be hardened according to the process of time, therefore, can wait for that institute carries out next operation after fixing time, and perhaps, the mode of heating time adhesion substrate 20 can improve the setting rate of silicon 30 and improve the speed of operation.
Then, carry out substrate cutting step S500, be about to time adhesion substrate 20 and cut off (dicing) take each light-emitting diode chip for backlight unit 10 as unit.After silicon-coating 30, for each light-emitting diode chip for backlight unit 10 is encapsulated, cut off time adhesion substrate 20 under the state that light-emitting diode chip for backlight unit 10 is installed on time adhesion substrate 20.
Then, as shown in Figure 9, carry out encapsulation (packaging) step S600, each time adhesion substrate 20 that has soon cut off is adhered to carrier 40 and is electrically connected with carrier 40.As shown in Figure 9, with 20 adhesions (die attaching) of inferior adhesion substrate after carrier 40, with the mode of electrode with the electrode of carrier 40 of wire 41 connecting luminous diode chips 10, execution encapsulation step S600.Carrying out encapsulation step S600 can engage (wire bonding) with wire and connect the electrode of time adhesion substrate and the electrode of carrier according to situation, perhaps, with flip chip, inferior adhesion substrate and carrier is electrically connected.When engaging light-emitting diode chip for backlight unit 10 or inferior adhesion substrate 20 and carrier 40 with wire, the silicon 30 of first part being coated bond sites is peelled off and is carried out wire and engages.
Then, after connection status, light-emitting diode chip for backlight unit 10 whether luminous that the goods of completing for encapsulation carry out wire 41 reaches the tests such as optical characteristics of the light that light-emitting diode chip for backlight unit 10 produces, for each carrier 40 except defective products, execution is with packing (taping) the step S700 of belt packing, and makes complete.And, first carried out testing procedure S300 before carrying out packaging step S700, the light-emitting diode except being judged as bad light-emitting diode is packed.
Through completing light-emitting diode of the present invention as above-mentioned processing procedure.
According to said method, silicon 30 can be coated in a lump a plurality of light-emitting diode chip for backlight unit 10 of installing on time adhesion substrate 20, therefore, compare with the method for after encapsulation, silicon 30 being coated each carrier 40, can increase productivity rapidly.
And, no matter the light emission direction of light-emitting diode chip for backlight unit 10 is thickness direction or Width, compare with reference to the light-emitting diode of explanation with Fig. 1, can make the thickness of the silicon 30 that is coated with more even, therefore can improve rapidly the optical characteristics of the light that light-emitting diode produces.Therefore, compare with reference to the light-emitting diode of explanation with Fig. 1, can significantly prevent the color separation phenomenon.
And, because carry out testing procedure S300 under the state that is installed on time adhesion substrate 20, thus can select ahead of time defective products, and do not carry out substrate cutting step S500 processing procedure afterwards for defective products, therefore, can prevent the loss on processing procedure.
Although the present invention discloses as above with preferred embodiment, it is not to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention, when doing a little change and retouching.
For example, in the above-described embodiments, before carrying out encapsulation step S600, part is coated the silicon 30 of bond sites and peelled off and engage with wire.But, before carrying out phosphor body application step S200, also can see through the method for shade (masking), do not allow phosphor body coat on electrode.
And in the above-described embodiments, phosphor body application step S200 coats with low-viscosity silicon 30 zone that is surrounded by dam 31 after can being included in dam 31 being formed at the peripheral part of time adhesion substrate 20.But can not form dam 31, the mode that silicon 30 is sprayed at all sidedly time adhesion substrate 20 is carried out phosphor body application step S200.And, can with spraying method, silicon 30 be coated with, and the resin pump of use spiral way, or use the resin pump of sending resin with drop unit, carry out phosphor body application step S200.
And, in the above-described embodiments, after carrying out testing procedure S300, carry out silicon replenish step S400, namely replenish silicon-coating 30 for the part of the thickness deficiency of silicon 30.But can not carry out silicon replenish step S400, after namely learning the optical characteristics of each light-emitting diode chip for backlight unit 10 through testing procedure S300, store this result, and directly carry out substrate cutting step S500.In encapsulation step S600, will except testing procedure S300 carry out be judged to be optical characteristics improperly the light-emitting diode chip for backlight unit 10 light-emitting diode chip for backlight unit 10 encapsulate.
Claims (8)
1. one kind is used time method of adhesion Substrate manufacture light-emitting diode, comprising:
Chip adhesion step is adhered to respectively time adhesion substrate with a plurality of light-emitting diode chip for backlight unit;
The phosphor body application step coats with the silicon that mixes fluorescent substance inferior adhesion substrate and the light-emitting diode chip for backlight unit that described chip adhesion step is completed, and the silicon that is coated on time adhesion substrate and light-emitting diode chip for backlight unit has uniform thickness;
The substrate cutting step, the inferior adhesion substrate that described phosphor body application step is completed cuts off take each light-emitting diode chip for backlight unit as unit; And
Encapsulation step, the inferior adhesion substrate that described substrate cutting step is completed is adhered to carrier and is electrically connected with carrier,
Described phosphor body application step comprises:
The silicon of high viscosity is coated the peripheral part of substrate and formed the dam; And
Viscosity is coated the middle body of substrate lower than the silicon on described dam, allowed described low-viscosity silicon flow equably and to harden.
2. the method for use according to claim 1 time adhesion Substrate manufacture light-emitting diode is characterized in that:
Described adhesion substrate is to form electrode to form on silicon material substrate.
3. the method for use according to claim 1 and 2 time adhesion Substrate manufacture light-emitting diode characterized by further comprising:
Testing procedure, the optical characteristics of testing each light-emitting diode chip for backlight unit that described phosphor body application step completes.
4. the method for use according to claim 3 time adhesion Substrate manufacture light-emitting diode characterized by further comprising:
Packaging step will be carried out the light-emitting diode that is judged to be bad light-emitting diode except described testing procedure and pack.
5. the method for use according to claim 3 time adhesion Substrate manufacture light-emitting diode characterized by further comprising:
The silicon replenish step after described testing procedure is carried out, when the coating thickness of described silicon is judged as when thin, is replenished the described silicon of coating.
6. the method for use according to claim 1 time adhesion Substrate manufacture light-emitting diode is characterized in that:
Described chip adhesion step is to be adhered to time adhesion substrate with the morphogenetic light-emitting diode chip for backlight unit of the type of flip-chip.
7. the method for use according to claim 1 time adhesion Substrate manufacture light-emitting diode is characterized in that:
Described encapsulation step is, the described silicon of part being coated above the electrode of light-emitting diode chip for backlight unit or inferior adhesion substrate is peelled off, and engages described electrode and carrier with wire, so that electrode and carrier electric connection.
8. the method for use according to claim 1 time adhesion Substrate manufacture light-emitting diode is characterized in that:
Described phosphor body application step is to be coated with described silicon in the mode that sprays.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090058334A KR101041068B1 (en) | 2009-06-29 | 2009-06-29 | Method of manufacturing light emitting diode using submount substrate |
| KR10-2009-0058334 | 2009-06-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101937961A CN101937961A (en) | 2011-01-05 |
| CN101937961B true CN101937961B (en) | 2013-05-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010102144292A Active CN101937961B (en) | 2009-06-29 | 2010-06-25 | Method for manufacturing a light-emitting diode by using a secondary-adhesion substrate |
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| Country | Link |
|---|---|
| KR (1) | KR101041068B1 (en) |
| CN (1) | CN101937961B (en) |
| TW (1) | TWI392123B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI442496B (en) * | 2011-03-01 | 2014-06-21 | Lextar Electronics Corp | Light engine and method for manufacturing the same |
| KR101326060B1 (en) * | 2012-09-11 | 2013-11-07 | 한국광기술원 | Grading system and method of sheets for led element mounting |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000183404A (en) * | 1998-12-14 | 2000-06-30 | Fuji Photo Film Co Ltd | Light emitting element array and method and apparatus for bonding it |
| JP4024994B2 (en) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | Semiconductor light emitting device |
| KR100587017B1 (en) * | 2005-02-23 | 2006-06-08 | 삼성전기주식회사 | Light emitting diode package and method for manufacturing the same |
| KR100665121B1 (en) * | 2005-02-28 | 2007-01-09 | 삼성전기주식회사 | Method of producing wavelength-converted light emitting diode package |
| JP2008091831A (en) * | 2006-10-05 | 2008-04-17 | Toshiba Corp | Submount substrate for led, manufacturing method thereof, and light emitting device using the substrate |
| JP2009076749A (en) * | 2007-09-21 | 2009-04-09 | Toyoda Gosei Co Ltd | Led apparatus, and method of manufacturing the same |
| JP2009117814A (en) * | 2007-10-29 | 2009-05-28 | William S Chan | Multi-junction multi-spectral solar converter |
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2009
- 2009-06-29 KR KR1020090058334A patent/KR101041068B1/en active IP Right Grant
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2010
- 2010-06-25 TW TW099120844A patent/TWI392123B/en active
- 2010-06-25 CN CN2010102144292A patent/CN101937961B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI392123B (en) | 2013-04-01 |
| CN101937961A (en) | 2011-01-05 |
| TW201101543A (en) | 2011-01-01 |
| KR20110000976A (en) | 2011-01-06 |
| KR101041068B1 (en) | 2011-06-13 |
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