TWI392123B - Method of manufacturing light emitting diode using submount substrate - Google Patents
Method of manufacturing light emitting diode using submount substrate Download PDFInfo
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- TWI392123B TWI392123B TW099120844A TW99120844A TWI392123B TW I392123 B TWI392123 B TW I392123B TW 099120844 A TW099120844 A TW 099120844A TW 99120844 A TW99120844 A TW 99120844A TW I392123 B TWI392123 B TW I392123B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Description
本發明是有關於一種使用次黏著基板製造發光二極體的方法，更具體而言，是有關於一種使用次黏著基板製造發光二極體的方法，其將發光二極體晶片(LED chip)黏著於次黏著基板(submount substrate)上的狀態下，在執行螢光體塗佈步驟之後，進行封裝而製造發光二極體。The present invention relates to a method for manufacturing a light-emitting diode using a secondary adhesive substrate, and more particularly to a method for manufacturing a light-emitting diode using a secondary adhesive substrate, which will have a light-emitting diode chip (LED chip). After the phosphor coating step is performed in a state of being adhered to a submount substrate, the package is printed to produce a light-emitting diode.
現有的發光二極體元件的製造方法為如下。首先，以藍寶石等材料製造發光二極體晶片1。接著，如圖1所示，將各發光二極體晶片1黏著(attaching)於載具2內部。接著，將發光二極體晶片1與載具2以導線4電性連接。再來，將混合螢光物質的矽3塗佈於發光二極體晶片1的周圍。此塗佈的螢光物質用於調節發光二極體晶片1所產生之光的光學特性。一般來說，以1931年國際照明協會(International Commission on Illumination；CIE)之表色系上的值來表示發光二極體元件的光學特性。A method of manufacturing a conventional light-emitting diode element is as follows. First, the light-emitting diode wafer 1 is made of a material such as sapphire. Next, as shown in FIG. 1, each of the light-emitting diode wafers 1 is attached to the inside of the carrier 2. Next, the LED wafer 1 and the carrier 2 are electrically connected by a wire 4. Further, ruthenium 3 in which a fluorescent substance is mixed is applied around the light-emitting diode wafer 1. This coated fluorescent substance is used to adjust the optical characteristics of light generated by the light-emitting diode wafer 1. In general, the optical characteristics of the light-emitting diode elements are represented by values on the color system of the International Commission on Illumination (CIE) of 1931.
在製造發光二極體晶片的製程中，透過半導體層厚度的調節或螢光物質塗佈量的調節等方法，可製造出具有所需表色系光學特性的發光二極體元件。In the process of manufacturing a light-emitting diode wafer, a light-emitting diode element having desired color characteristics of the color system can be manufactured by adjusting the thickness of the semiconductor layer or adjusting the amount of the fluorescent material applied.
但是，如圖1所示之現有的發光二極體製造方法，在將發光二極體晶片1安裝於載具內部之後，將混合螢光物質的矽3分別分送於載具2，造成製程煩瑣且難以提高生產力。並且，難以將正確量之矽塗佈於各發光二極體元件。However, in the conventional method of manufacturing a light-emitting diode as shown in FIG. 1, after the light-emitting diode wafer 1 is mounted inside the carrier, the 矽3 of the mixed fluorescent material is separately distributed to the carrier 2, causing a process. It is cumbersome and difficult to increase productivity. Further, it is difficult to apply the correct amount of ruthenium to each of the light-emitting diode elements.
此外，如圖1所示之現有的發光二極體製造方法，在載具2內位於發光二極體晶片1周圍之矽3的厚度不一致，即不同的位置分別有不同的厚度，這使發光二極體元件的光學特性不佳。換句話說，離發光二極體元件近距離的位置會產生整體上無色差而具有均一表色系值的光。但是，若在離發光二極體元件遠距離的地點進行測定表色系的話，表色系值將隨著照射區域的不同而改變，因而產生分色現象。In addition, in the conventional method for manufacturing a light-emitting diode as shown in FIG. 1, the thickness of the crucible 3 located around the light-emitting diode wafer 1 in the carrier 2 does not match, that is, different positions have different thicknesses, which makes the light-emitting The optical characteristics of the diode element are not good. In other words, a position close to the light-emitting diode element produces light having a uniform colorimetric value as a whole without color difference. However, if the colorimetric system is measured at a distance from the light-emitting diode element, the colorimetric value will change depending on the irradiation area, and thus a color separation phenomenon occurs.
另外，如圖2與圖3所示，發光二極體晶片可依發光方向區分為：如圖2所示之往厚度方向發光的發光二極體晶片5；以及如圖3所示之往寬度方向發光的發光二極體晶片6。In addition, as shown in FIG. 2 and FIG. 3, the light-emitting diode wafer can be divided into two according to the light-emitting direction: the light-emitting diode wafer 5 which emits light in the thickness direction as shown in FIG. 2; and the width as shown in FIG. A light-emitting diode chip 6 that emits light in the direction.
尤其，若對如圖3所示之發光二極體晶片6以如圖1所示之方法塗佈螢光物質的話，將產生更大的分色現象。In particular, if a phosphor material is applied to the light-emitting diode wafer 6 as shown in Fig. 1, a larger color separation phenomenon will occur.
本發明是鑒於上述情況而成者，其目的在於提供：一種透過改善將混合螢光物質的矽塗佈於發光二極體晶片的製程，可提高發光二極體元件之生產力的製造方法；以及一種透過將混合螢光物質的矽均勻地塗佈於發光二極體晶片的表面，從而不管發光二極體晶片所產生的光照射到的任何位置，皆可具有均一的表色系值，而不會產生分色現象之發光二極體元件的製造方法。The present invention has been made in view of the above circumstances, and an object thereof is to provide a manufacturing method capable of improving the productivity of a light-emitting diode element by improving a process of applying germanium mixed with a fluorescent material to a light-emitting diode wafer; By uniformly coating the ruthenium of the mixed fluorescent material on the surface of the light-emitting diode wafer, a uniform color system value can be obtained regardless of any position where the light generated by the light-emitting diode wafer is irradiated, and A method of manufacturing a light-emitting diode element that does not cause a color separation phenomenon.
為實現上述目的，本發明所提供之使用次黏著基板製造發光二極體的方法，包括：晶片黏著步驟，將多個發光二極體晶片分別黏著於次黏著基板；螢光體塗佈步驟，將混合螢光物質的矽塗佈於晶片黏著步驟完成之次黏著基板與發光二極體晶片；基板切斷步驟，將螢光體塗佈步驟完成之次黏著基板以各發光二極體晶片為單位切斷；以及封裝步驟，將基板切斷步驟完成之次黏著基板黏著於載具並與載具電性連接。In order to achieve the above object, a method for manufacturing a light-emitting diode using a secondary adhesive substrate, comprising: a wafer bonding step, respectively bonding a plurality of light-emitting diode wafers to a secondary adhesive substrate; and a phosphor coating step, Applying the ruthenium of the mixed fluorescent substance to the secondary adhesive substrate and the light-emitting diode wafer completed in the wafer bonding step; and the substrate cutting step, the secondary adhesive substrate is completed by the phosphor coating step, and each of the light-emitting diode wafers is used as the light-emitting diode wafer The unit is cut off; and the encapsulating step is to adhere the sub-adhesive substrate to the carrier and electrically connect the carrier to the carrier.
依據本發明，透過改善將混合螢光物質的矽塗佈於發光二極體晶片的製程，可提高發光二極體製造方法的生產力。According to the present invention, the productivity of the method for manufacturing a light-emitting diode can be improved by improving the process of applying germanium in which a fluorescent material is mixed to a light-emitting diode wafer.
並且，依據本發明，透過將塗佈於發光二極體晶片之矽的厚度均勻化，可改善發光二極體元件的光學特性。Further, according to the present invention, the optical characteristics of the light-emitting diode element can be improved by uniformizing the thickness of the germanium applied to the light-emitting diode wafer.
以下，參照附圖詳細說明本發明的較佳實施例。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
圖4是本發明實施例之使用次黏著基板製造發光二極體的方法的步驟圖；圖5至圖9是以圖4所示之使用次黏著基板製造發光二極體的方法製作發光二極體元件之製程的示意圖。4 is a process diagram of a method for manufacturing a light-emitting diode using a sub-adhesive substrate according to an embodiment of the present invention; and FIGS. 5 to 9 are a method for fabricating a light-emitting diode by using a secondary adhesive substrate as shown in FIG. Schematic diagram of the process of the body element.
為了實施本發明之使用次黏著基板20製造發光二極體的方法，首先準備發光二極體晶片10。發光二極體晶片10是在藍寶石基板上形成電極而成之一般的發光二極體晶片，並以各發光二極體晶片10為單位切斷(dicing)的型態。In order to implement the method of manufacturing the light-emitting diode using the secondary adhesive substrate 20 of the present invention, the light-emitting diode wafer 10 is first prepared. The light-emitting diode wafer 10 is a general light-emitting diode wafer in which electrodes are formed on a sapphire substrate, and is diced in units of the respective light-emitting diode wafers 10.
接著，如圖5與圖6所示，執行晶片黏著步驟S100，即將各發光二極體晶片10黏著於次黏著基板20。次黏著基板20以矽材料基板所製成。為了使發光二極體晶片以倒裝晶片之方式黏著於次黏著基板，可將倒裝晶片電極(即凸塊)形成於次黏著基板。並且，為了使發光二極體晶片與次黏著基板以導線接合，可將電極墊形成於次黏著基板。或者，不形成電極於次黏著基板20，僅使發光二極體晶片10黏著(die attaching)亦可。Next, as shown in FIG. 5 and FIG. 6, the wafer bonding step S100 is performed, that is, each of the light-emitting diode wafers 10 is adhered to the secondary adhesive substrate 20. The secondary adhesive substrate 20 is made of a tantalum material substrate. In order to adhere the light-emitting diode wafer to the sub-adhesive substrate by flip chip bonding, the flip chip electrode (ie, bump) may be formed on the sub-adhesive substrate. Further, in order to wire-bond the light-emitting diode wafer and the secondary adhesive substrate, the electrode pads may be formed on the secondary adhesive substrate. Alternatively, the electrode is not formed on the sub-adhesive substrate 20, and only the light-emitting diode wafer 10 may be die-attached.
接著，如圖7與圖8所示，執行螢光體塗佈步驟S200，即將混合螢光物質的矽30塗佈於次黏著基板20與發光二極體晶片10上。在螢光體塗佈步驟S200中，可將矽30以噴塗(spray)之方式進行塗佈，亦可使用一般樹脂分送裝置之方式進行塗佈。如上述之矽30塗佈製程，可如同圖7與圖8所示之方式進行。首先，將高黏性的矽30塗佈於晶圓(wafer)的周邊部分而形成壩(dam 31)，接著，將黏性較低的矽30塗佈於被壩31包圍的部分32，以執行螢光體塗佈步驟S200。如此一來，可容易區分在次黏著基板20上需塗佈矽30的部分及不塗佈矽30之其他部分，並在很快的時間內可執行螢光體塗佈步驟S200。並且，將液態的矽30以多數個液滴(droplet)狀態塗佈之後，讓液滴往周邊流動，在次黏著基板20與發光二極體晶片10之表面可形成均勻的(uniform)矽30膜。並且，如上述之方法將矽30塗佈於次黏著基板20與發光二極體晶片10之表面，可使塗佈於發光二極體晶片10上面之矽30的厚度均勻化，且可使塗佈於發光二極體晶片10側面之矽30的厚度均勻化。如此一來，藉由發光二極體晶片10表面之矽30的厚度均勻化，不管任何發光地點均可穩定地維持發光二極體晶片10所產生之光的光學特性(即表色系上的值)。從而，可容易將發光二極體晶片10之發光特性維持一定的水準。並且，由於不管發光二極體晶片10之任何位置，所塗佈之矽30的厚度(塗佈之螢光物質的量)皆為均一，所以離發光二極體晶片10遠距離的位置也不會產生分色現象。Next, as shown in FIG. 7 and FIG. 8, the phosphor coating step S200 is performed, that is, the crucible 30 in which the phosphor is mixed is applied onto the sub-adhesive substrate 20 and the LED wafer 10. In the phosphor application step S200, the crucible 30 may be applied by spraying, or may be applied by a general resin dispensing device. The 矽30 coating process as described above can be carried out as shown in Figs. 7 and 8. First, a highly viscous crucible 30 is applied to a peripheral portion of a wafer to form a dam (dam 31), and then a less viscous crucible 30 is applied to a portion 32 surrounded by the dam 31 to The phosphor coating step S200 is performed. In this way, the portion where the crucible 30 is to be coated on the sub-adhesive substrate 20 and the other portion where the crucible 30 is not coated can be easily distinguished, and the phosphor coating step S200 can be performed in a very short time. Further, after the liquid crucible 30 is applied in a plurality of droplets, the droplets are allowed to flow to the periphery, and a uniform 矽30 can be formed on the surface of the sub-adhesive substrate 20 and the LED wafer 10. membrane. Further, by applying the crucible 30 to the surface of the sub-adhesive substrate 20 and the light-emitting diode wafer 10 as described above, the thickness of the crucible 30 coated on the upper surface of the light-emitting diode wafer 10 can be made uniform, and the coating can be performed. The thickness of the crucible 30 disposed on the side of the light-emitting diode wafer 10 is uniformized. In this way, by uniformizing the thickness of the crucible 30 on the surface of the LED wafer 10, the optical characteristics of the light generated by the LED wafer 10 can be stably maintained regardless of any illumination position (ie, on the color system). value). Therefore, the light-emitting characteristics of the light-emitting diode wafer 10 can be easily maintained at a certain level. Moreover, since the thickness of the applied crucible 30 (the amount of the applied fluorescent material) is uniform regardless of the position of the LED wafer 10, the position away from the LED wafer 10 is not at a long distance. A color separation will occur.
接著，執行測試步驟S300，即測試各發光二極體晶片10的光學特性。在測試步驟S300中，在發光二極體晶片10安裝於次黏著基板20的狀態下，使用探針(probe)等裝置將電壓施加於各發光二極體晶片10，以測試發光二極體晶片10所產生之光的光學特性。在上述使用探針來測試發光二極體晶片10之光學特性的時候，可先將部分塗佈於電極上面的矽30剝去之後，執行測試步驟S300。Next, a test step S300 is performed to test the optical characteristics of each of the light-emitting diode wafers 10. In the test step S300, in a state where the light-emitting diode wafer 10 is mounted on the sub-adhesive substrate 20, a voltage is applied to each of the light-emitting diode wafers 10 using a device such as a probe to test the light-emitting diode wafer. The optical properties of the light produced by 10. When the optical characteristics of the light-emitting diode wafer 10 are tested using the probe described above, the test step S300 may be performed after peeling off the crucible 30 partially coated on the electrode.
在測試項目中，發光二極體晶片10所產生之光的表色系上的值為主要項目。發光二極體晶片10所產生之光的表色系值被發光二極體晶片10半導體層之層的厚度、混合螢光物質之矽30的厚度等因素所影響。依照執行如上述測試步驟S300的結果，若發光二極體晶片10所產生之光的光學特性不同於已設定值的話，計算可補正光學特性之矽30的厚度。In the test item, the value of the color of the light generated by the light-emitting diode wafer 10 is the main item. The color system value of the light generated by the light-emitting diode wafer 10 is affected by factors such as the thickness of the layer of the semiconductor layer of the light-emitting diode wafer 10 and the thickness of the germanium 30 of the mixed fluorescent material. According to the result of performing the above test step S300, if the optical characteristic of the light generated by the light-emitting diode wafer 10 is different from the set value, the thickness of the 矽30 which can correct the optical characteristic is calculated.
以如上述計算出來的結果，執行矽補充步驟S400，即對於有必要增加矽30厚度之區域進行進一步的矽30塗佈，使矽30的厚度增加至所需厚度。With the result calculated as described above, the 矽addition step S400 is performed to further apply the 矽30 coating to the region where it is necessary to increase the thickness of the 矽30 to increase the thickness of the crucible 30 to the desired thickness.
在矽補充步驟S400完成之後，執行矽30的硬化作業。矽30會依時間的經過被硬化，因此，可等待所定時間之後執行下一個作業，或者，可以加熱次黏著基板20的方式提高矽30的硬化速度而提高作業的速度。After the completion of the additional step S400, the hardening operation of the crucible 30 is performed. The crucible 30 is hardened by the passage of time. Therefore, the next operation can be performed after waiting for a predetermined time, or the hardening speed of the crucible 30 can be increased to increase the speed of the work by heating the sub-adhesive substrate 20.
接著，執行基板切斷步驟S500，即將次黏著基板20以各發光二極體晶片10為單位切斷(dicing)。在將發光二極體晶片10安裝於次黏著基板20的狀態下塗佈矽30之後，為了將各發光二極體晶片10進行封裝，切斷次黏著基板20。Next, the substrate cutting step S500 is performed, that is, the secondary adhesive substrate 20 is diced in units of the respective light-emitting diode wafers 10. After the yoke 30 is applied in a state where the luminescent diode wafer 10 is mounted on the sub-adhesive substrate 20, the sub-adhesive substrate 20 is cut in order to package the respective luminescent diode wafers 10.
接著，如圖9所示，執行封裝(packaging)步驟S600，即將已切斷之各次黏著基板20黏著於載具40並與載具40電性連接。如圖9所示，將次黏著基板20黏著(die attaching)於載具40之後，以導線41連接發光二極體晶片10之電極與載具40之電極的方式，執行封裝步驟S600。執行封裝步驟S600可依情況，以導線接合來連接次黏著基板之電極與載具之電極，或者，以倒裝晶片方式將次黏著基板與載具電性連接。以導線接合發光二極體晶片10或次黏著基板20與載具40的時候，先將部分塗佈於接合地點之矽30剝去並執行導線接合。Next, as shown in FIG. 9, a packaging step S600 is performed in which the respective adhesive substrates 20 that have been cut are adhered to the carrier 40 and electrically connected to the carrier 40. As shown in FIG. 9, after the secondary adhesive substrate 20 is die-attached to the carrier 40, the electrode of the light-emitting diode wafer 10 and the electrode of the carrier 40 are connected by the wire 41, and the packaging step S600 is performed. The encapsulating step S600 may be performed by wire bonding to connect the electrode of the sub-adhesive substrate and the electrode of the carrier, or to electrically connect the sub-adhesive substrate to the carrier by flip chip bonding. When the light-emitting diode wafer 10 or the secondary adhesive substrate 20 and the carrier 40 are bonded by wires, the portion 30 coated at the joint portion is first peeled off and wire bonding is performed.
接著，在對於封裝完成之製品進行導線41的連接狀態、發光二極體晶片10的發光與否及發光二極體晶片10所產生之光的光學特性等測試之後，對於除不良品以外的各載具40，執行以膠帶包裝的包裝(taping)步驟S700，並製造完畢。並且，在執行包裝步驟S700之前先執行測試步驟S300，將除了被判定為不良之發光二極體元件之外的發光二極體元件進行包裝。Next, after testing the connection state of the wire 41, the light emission of the light-emitting diode wafer 10, and the optical characteristics of the light generated by the light-emitting diode wafer 10 for the packaged product, the test is performed for each of the defective products. The carrier 40 performs a tapping step S700 of tape and is completed. Then, the test step S300 is performed before the packaging step S700 is performed, and the light-emitting diode elements other than the light-emitting diode elements determined to be defective are packaged.
經如上述製程而完成本發明之發光二極體元件。The light-emitting diode element of the present invention is completed by the above process.
依上述方法，可將矽30一次全部地塗佈於次黏著基板20上安裝之多個發光二極體晶片10，因此，與封裝之後將矽30塗佈於各載具40的方法相比，可迅速提高生產力。According to the above method, the crucible 30 can be applied to the plurality of light-emitting diode wafers 10 mounted on the sub-adhesive substrate 20 all at once, and therefore, compared with the method of applying the crucible 30 to each of the carriers 40 after packaging, Can quickly increase productivity.
並且，不管發光二極體晶片10之發光方向為厚度方向或寬度方向，與圖1參照說明的發光二極體元件相比，可使所塗佈之矽30的厚度更均勻，故可迅速提高發光二極體元件所產生之光的光學特性。因此，與圖1參照說明的發光二極體元件相比，可大幅防止分色現象。Further, regardless of the light-emitting direction of the light-emitting diode wafer 10 in the thickness direction or the width direction, the thickness of the applied crucible 30 can be made more uniform than that of the light-emitting diode element described with reference to FIG. Optical properties of light produced by a light-emitting diode element. Therefore, the color separation phenomenon can be largely prevented as compared with the light-emitting diode element described with reference to FIG.
並且，因為在安裝於次黏著基板20上之狀態下執行測試步驟S300，故可提早選出不良品，並對於不良品不執行基板切斷步驟S500之後的製程，因此，可防止製程上的損失。Further, since the test step S300 is performed in a state of being mounted on the sub-adhesive substrate 20, the defective product can be selected early, and the process after the substrate cutting step S500 is not performed for the defective product, so that the process loss can be prevented.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許更動與潤飾。While the invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention, and may be modified and modified by those skilled in the art without departing from the spirit and scope of the invention.
譬如，在上述實施例中，在執行封裝步驟S600之前，將部分塗佈於接合地點的矽30剝去並以導線接合。但是，在執行螢光體塗佈步驟S200之前，亦可透過遮罩(masking)的方法，不讓螢光體塗佈於電極上。For example, in the above embodiment, before the encapsulation step S600 is performed, the crucible 30 partially coated at the bonding place is peeled off and joined by wires. However, before the phosphor coating step S200 is performed, the method of masking may be performed to prevent the phosphor from being applied to the electrode.
並且，在上述實施例中，螢光體塗佈步驟S200可包括在將壩31形成於次黏著基板20的周邊部分之後，將低黏性的矽30塗佈於被壩31包圍的區域。但可不形成壩31，將矽30全面地噴塗於次黏著基板20之方式執行螢光體塗佈步驟S200。並且，可不以噴塗方式將矽30塗佈，而使用螺旋方式的樹脂泵，或使用以液滴單位分送樹脂的樹脂泵，來執行螢光體塗佈步驟S200。Further, in the above embodiment, the phosphor coating step S200 may include applying the low-viscosity crucible 30 to the region surrounded by the dam 31 after the dam 31 is formed on the peripheral portion of the sub-adhesive substrate 20. However, the phosphor coating step S200 may be performed in such a manner that the dam 30 is not formed and the crucible 30 is entirely sprayed on the sub-adhesive substrate 20. Further, the phosphor coating step S200 can be performed without applying the crucible 30 by spraying, using a spiral type resin pump or a resin pump that dispenses the resin in droplet units.
並且，在上述實施例中，在執行測試步驟S300之後，執行矽補充步驟S400，即對於矽30之厚度不足的部分補充塗佈矽30。但可不執行矽補充步驟S400，即透過測試步驟S300得知各發光二極體晶片10的光學特性之後，儲存該結果，並直接執行基板切斷步驟S500。在封裝步驟S600中，將除測試步驟S300執行判定為光學特性不良之發光二極體晶片10之外的發光二極體晶片10進行封裝。Also, in the above embodiment, after the test step S300 is performed, the 矽 replenishment step S400 is performed, that is, the portion 30 having the insufficient thickness of the crucible 30 is replenished. However, the step S400 may be omitted, that is, after the optical characteristics of each of the light-emitting diode wafers 10 are obtained through the test step S300, the result is stored, and the substrate cutting step S500 is directly performed. In the packaging step S600, the light-emitting diode wafer 10 other than the light-emitting diode wafer 10 determined to have poor optical characteristics is packaged in addition to the test step S300.
S100．．．晶片黏著步驟S100. . . Wafer bonding step
S200．．．螢光體塗佈步驟S200. . . Phosphor coating step
S300．．．測試步驟S300. . . Test procedure
S400．．．矽補充步驟S400. . .矽Additional steps
S500．．．基板切斷步驟S500. . . Substrate cutting step
S600．．．封裝步驟S600. . . Packaging step
S700．．．包裝步驟S700. . . Packaging step
1、5、6、10．．．發光二極體晶片1, 5, 6, 10. . . Light-emitting diode chip
20．．．次黏著基板20. . . Secondary adhesion substrate
3、30．．．矽3, 30. . .矽
31．．．壩31. . . dam
32．．．被壩包圍的部分32. . . Part surrounded by dam
2、40．．．載具2, 40. . . vehicle
4、41．．．導線4, 41. . . wire
圖1是以一種現有發光二極體製造方法所製作之發光二極體元件的剖面圖。1 is a cross-sectional view of a light emitting diode device fabricated by a conventional method of fabricating a light emitting diode.
圖2與圖3是說明發光二極體晶片之發光方向的剖面圖。2 and 3 are cross-sectional views illustrating the light-emitting direction of the light-emitting diode wafer.
圖4是本發明實施例之一種使用次黏著基板製造發光二極體的方法的步驟圖。4 is a flow chart showing a method of manufacturing a light-emitting diode using a sub-adhesive substrate according to an embodiment of the present invention.
圖5是以圖4所示之使用次黏著基板製造發光二極體的方法所製作發光二極體元件之次黏著基板的俯視圖。Fig. 5 is a plan view showing a secondary adhesive substrate of a light-emitting diode element produced by the method of manufacturing a light-emitting diode using a secondary adhesive substrate shown in Fig. 4.
圖6是圖5所示之次黏著基板的局部剖面圖。Figure 6 is a partial cross-sectional view of the secondary adhesive substrate shown in Figure 5.
圖7是圖5所示之次黏著基板的矽塗佈製程的俯視圖。Fig. 7 is a plan view showing a ruthenium coating process of the secondary adhesive substrate shown in Fig. 5.
圖8是圖7所示之次黏著基板的局部剖面圖。Figure 8 is a partial cross-sectional view of the secondary adhesive substrate shown in Figure 7.
圖9是以圖4所示之使用次黏著基板製造發光二極體的方法所製作之發光二極體元件的剖面圖。Fig. 9 is a cross-sectional view showing a light-emitting diode element produced by the method of manufacturing a light-emitting diode using the sub-adhesive substrate shown in Fig. 4.
S100．．．晶片黏著步驟S100. . . Wafer bonding step
S200．．．螢光體塗佈步驟S200. . . Phosphor coating step
S300．．．測試步驟S300. . . Test procedure
S400．．．矽補充步驟S400. . .矽Additional steps
S500．．．基板切斷步驟S500. . . Substrate cutting step
S600．．．封裝步驟S600. . . Packaging step
S700．．．包裝步驟S700. . . Packaging step
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| JP2000183404A (en) * | 1998-12-14 | 2000-06-30 | Fuji Photo Film Co Ltd | Light emitting element array and method and apparatus for bonding it |
| US7179671B2 (en) * | 2000-06-30 | 2007-02-20 | Kabushiki Kaisha Toshiba | Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
| JP2008091831A (en) * | 2006-10-05 | 2008-04-17 | Toshiba Corp | Submount substrate for led, manufacturing method thereof, and light emitting device using the substrate |
| EP2056362A2 (en) * | 2007-10-29 | 2009-05-06 | Waffenschmidt, Lynn | Multi-junction multi-spectral solar converter |
| US20090137073A1 (en) * | 2005-02-23 | 2009-05-28 | Samsung Electro-Mechanics Co., Ltd | Light emitting diode package and fabrication method thereof |
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| JP2000183404A (en) * | 1998-12-14 | 2000-06-30 | Fuji Photo Film Co Ltd | Light emitting element array and method and apparatus for bonding it |
| US7179671B2 (en) * | 2000-06-30 | 2007-02-20 | Kabushiki Kaisha Toshiba | Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
| US20090137073A1 (en) * | 2005-02-23 | 2009-05-28 | Samsung Electro-Mechanics Co., Ltd | Light emitting diode package and fabrication method thereof |
| JP2008091831A (en) * | 2006-10-05 | 2008-04-17 | Toshiba Corp | Submount substrate for led, manufacturing method thereof, and light emitting device using the substrate |
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