JP2009076749A5 - - Google Patents

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Publication number
JP2009076749A5
JP2009076749A5 JP2007245423A JP2007245423A JP2009076749A5 JP 2009076749 A5 JP2009076749 A5 JP 2009076749A5 JP 2007245423 A JP2007245423 A JP 2007245423A JP 2007245423 A JP2007245423 A JP 2007245423A JP 2009076749 A5 JP2009076749 A5 JP 2009076749A5
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Japan
Prior art keywords
light emitting
manufacturing
paint
resin
phosphor
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Pending
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JP2007245423A
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Japanese (ja)
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JP2009076749A (en
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Priority to JP2007245423A priority Critical patent/JP2009076749A/en
Priority claimed from JP2007245423A external-priority patent/JP2009076749A/en
Publication of JP2009076749A publication Critical patent/JP2009076749A/en
Publication of JP2009076749A5 publication Critical patent/JP2009076749A5/ja
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Claims (13)

レーザリフトオフ法により製造されたIII族窒化物系化合物半導体発光素子と、揮発性有機溶剤を用いたスプレーコートにより該発光素子の上面発光面に形成された蛍光体層と、を備えてなるＬＥＤ装置。 An LED device comprising: a group III nitride compound semiconductor light emitting device manufactured by a laser lift-off method; and a phosphor layer formed on a top light emitting surface of the light emitting device by spray coating using a volatile organic solvent. . 前記蛍光体層の厚さが１０μｍ〜２５μｍである、請求項１に記載のＬＥＤ装置。   The LED device according to claim 1, wherein the phosphor layer has a thickness of 10 μm to 25 μm. 前記蛍光体層が含有する蛍光体の粒径が１〜１０μｍである、請求項１又は２に記載のＬＥＤ装置。   The LED device according to claim 1 or 2, wherein a particle size of the phosphor contained in the phosphor layer is 1 to 10 µm. 前記発光素子が青色系の光を発光し、The light emitting element emits blue light;
前記蛍光体層が、前記発光素子からの光により励起されて黄色系の蛍光を発する蛍光体を含有する、請求項１〜３のいずれか一項に記載のＬＥＤ装置。The LED device according to claim 1, wherein the phosphor layer contains a phosphor that is excited by light from the light emitting element to emit yellowish fluorescence. 基板に実装されたIII族窒化物系化合物半導体発光素子を用意する第１工程と、A first step of preparing a group III nitride compound semiconductor light emitting device mounted on a substrate;
樹脂、蛍光体及び揮発性有機溶剤からなる塗料を用意し、スプレーコートにより該塗料を前記発光素子の上面発光面にコートする第２工程と、A second step of preparing a paint composed of a resin, a phosphor and a volatile organic solvent, and coating the paint on the top light emitting surface of the light emitting element by spray coating;
コートされた塗料を乾燥・硬化する第３工程と、A third step of drying and curing the coated paint;
を含む、ＬＥＤ装置の製造方法。A method for manufacturing an LED device, comprising: 前記塗料の用意が、前記樹脂と前記揮発性有機溶剤を混合した後に前記蛍光体を添加することである、請求項５に記載の製造方法。The manufacturing method according to claim 5, wherein the preparation of the paint is to add the phosphor after mixing the resin and the volatile organic solvent. 前記III族窒化物系化合物半導体発光素子が、レーザリフトオフ法により製造された発光素子である、請求項５又は６に記載の製造方法。 The manufacturing method according to claim 5 or 6 , wherein the group III nitride compound semiconductor light emitting device is a light emitting device manufactured by a laser lift-off method. 前記塗料における樹脂と蛍光体の含有比率が、樹脂２０重量部に対して蛍光体６０重量部〜１００重量部である、請求項５〜７のいずれか一項に記載の製造方法。 The manufacturing method as described in any one of Claims 5-7 whose content ratio of resin and fluorescent substance in the said coating material is 60 to 100 weight part of fluorescent substance with respect to 20 weight part of resin. 前記樹脂がシリコーン樹脂であり、
前記第３工程が、前記塗料中の揮発性有機溶剤を揮発させる段階と、前記塗料中の樹脂を硬化させる段階とからなる、請求項５〜８のいずれか一項に記載の製造方法。 The resin is a silicone resin;
It said third step includes a step of volatilizing the volatile organic solvent agent in said coating material, and a step of curing the resin in said paint process according to any one of claims 5-8. 前記塗料中の揮発性有機溶剤を揮発させる段階において、２５℃〜７０℃の条件下で乾燥させて前記塗料中の揮発性有機溶剤を揮発させる、請求項９に記載の製造方法。The method according to claim 9, wherein in the step of volatilizing the volatile organic solvent in the paint, the volatile organic solvent in the paint is volatilized by drying under a condition of 25 ° C. to 70 ° C. 前記第１工程と前記第２工程の間に前記発光素子の発光波長を検査し、該検査の結果に応じて、前記第２工程のスプレーコートの条件を設定する、請求項５〜１０のいずれか一項に記載の製造方法。The light emitting wavelength of the light emitting element is inspected between the first step and the second step, and the condition of spray coating in the second step is set according to the result of the inspection. The manufacturing method according to claim 1. 前記発光素子が青色系の光を発光し、
前記第３工程の後に前記発光素子の上面発光面に形成される蛍光体層が、前記発光素子からの光により励起されて黄色系の蛍光を発する蛍光体を含有する、請求項５〜１１のいずれか一項に記載の製造方法。 The light emitting element emits blue light;
The phosphor layer formed on the upper surface light emitting surface of the light emitting element after the third step contains a phosphor that is excited by light from the light emitting element to emit yellowish fluorescence . The manufacturing method as described in any one . 請求項５〜１２のいずれか一項に記載の製造方法によって製造されたＬＥＤ装置。 The LED device manufactured by the manufacturing method as described in any one of Claims 5-12 .
JP2007245423A 2007-09-21 2007-09-21 Led apparatus, and method of manufacturing the same Pending JP2009076749A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007245423A JP2009076749A (en) 2007-09-21 2007-09-21 Led apparatus, and method of manufacturing the same

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Application Number Priority Date Filing Date Title
JP2007245423A JP2009076749A (en) 2007-09-21 2007-09-21 Led apparatus, and method of manufacturing the same

Publications (2)

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JP2009076749A JP2009076749A (en) 2009-04-09
JP2009076749A5 true JP2009076749A5 (en) 2009-12-17

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CN102097425A (en) * 2009-12-09 2011-06-15 三星Led株式会社 Light emitting diode, method for fabricating phosphor layer, and lighting apparatus
TWI456798B (en) * 2010-04-23 2014-10-11 Formosa Epitaxy Inc Method of manufacturing light emitting device
CN102148139B (en) * 2010-12-31 2012-06-13 东莞市中镓半导体科技有限公司 Improved method for eliminating residual stress of GaN epitaxial wafer by laser quasi-stripping
US9508904B2 (en) 2011-01-31 2016-11-29 Cree, Inc. Structures and substrates for mounting optical elements and methods and devices for providing the same background
JP2013026590A (en) * 2011-07-26 2013-02-04 Toyoda Gosei Co Ltd Light-emitting device manufacturing method
WO2013061781A1 (en) * 2011-10-24 2013-05-02 コニカミノルタＩｊ株式会社 Coating composition and method for producing light emitting device
CN103187484A (en) * 2011-12-27 2013-07-03 展晶科技(深圳)有限公司 Package method for light emitting diode
JP2013077825A (en) * 2012-11-26 2013-04-25 Dexerials Corp Green-emitting phosphor particle, color conversion sheet, light-emitting device, and image display device assembly
KR20140096722A (en) * 2013-01-29 2014-08-06 엘지이노텍 주식회사 A lamp unit
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JP2015142011A (en) * 2014-01-29 2015-08-03 スタンレー電気株式会社 Semiconductor light-emitting device and method for manufacturing the same
KR102344533B1 (en) * 2015-02-12 2021-12-29 엘지이노텍 주식회사 Lighting emitting device package
JP2017220530A (en) * 2016-06-06 2017-12-14 シチズン電子株式会社 Manufacturing method of light-emitting device
JP2016194709A (en) * 2016-06-23 2016-11-17 セイコーエプソン株式会社 Light source device and projector
JP6998114B2 (en) * 2016-12-27 2022-02-04 日亜化学工業株式会社 Manufacturing method of light emitting device
US11552228B2 (en) 2018-08-17 2023-01-10 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
JPWO2020241511A1 (en) * 2019-05-24 2020-12-03
KR20230047378A (en) * 2020-08-07 2023-04-07 덴카 주식회사 Phosphor paints, coating films, phosphor substrates and lighting devices

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ATE525755T1 (en) * 2001-10-12 2011-10-15 Nichia Corp LIGHT-EMITTING COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
JP2007238815A (en) * 2006-03-09 2007-09-20 Toshiba Corp Phosphor for light emitting device and light emitting device
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