JP2003163376A - Wavelength conversion material and light emitting element - Google Patents

Wavelength conversion material and light emitting element

Info

Publication number
JP2003163376A
JP2003163376A JP2001364083A JP2001364083A JP2003163376A JP 2003163376 A JP2003163376 A JP 2003163376A JP 2001364083 A JP2001364083 A JP 2001364083A JP 2001364083 A JP2001364083 A JP 2001364083A JP 2003163376 A JP2003163376 A JP 2003163376A
Authority
JP
Japan
Prior art keywords
wavelength conversion
light
light emitting
light source
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001364083A
Other languages
Japanese (ja)
Inventor
Yasuyuki Hanada
康行 花田
Toshihide Maeda
俊秀 前田
Megumi Sakagami
恵 坂上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001364083A priority Critical patent/JP2003163376A/en
Publication of JP2003163376A publication Critical patent/JP2003163376A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a wavelength conversion material and a light emitting element which have excellent permeability for stimulation light and fluorescence and high photothermal durability in which deteriorations of a fluorescent and resin materials are reduced by obtaining a high luminance and highly controlled chromaticity by suitably scattering the light. <P>SOLUTION: The wavelength conversion material contains 1 to 10 wt.% of a fluorescent material and 0.5 to 4 wt.% of at least one of an optical radical scavenger, and an antioxidant to 100 wt.% of a resin material. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、白色光を出射する
波長変換材料及び発光素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wavelength conversion material that emits white light and a light emitting device.

【0002】[0002]

【従来の技術】従来の白色半導体発光素子(LED)と
しては、以下に列記する技術がある。
2. Description of the Related Art As conventional white semiconductor light emitting devices (LEDs), there are the following technologies.

【0003】(1)青色または青紫色の発光ダイオード
と、この発光ダイオードの発光を吸収して可視域に発光
する1種または2種以上の蛍光体とを組み合わせた白色
発光素子において、発光ダイオードと蛍光体の発光色が
加色して互いに補色の関係になり、白色に発光するよう
に前記蛍光体を選択する(特開平10−163535号
公報)。
(1) In a white light emitting element, which is a combination of a blue or blue-violet light emitting diode and one or more phosphors that absorb the light emitted from the light emitting diode and emit light in the visible range, The phosphors are selected so that the emission colors of the phosphors are added to have a complementary color relationship with each other and the phosphors emit white light (JP-A-10-163535).

【0004】(2)発光素子を発光ダイオード・チップ
とした白色光源に、波長変換材料を用いて波長変換をす
ることにより演色性を向上させる(特開平11−399
17号公報)。具体的には、色素ローダミン(Rhod
amin)を溶解分散させたエポキシ樹脂によりLED
チップを被覆する。
(2) A white light source having a light emitting diode chip as a light emitting element is subjected to wavelength conversion by using a wavelength conversion material to improve color rendering properties (Japanese Patent Laid-Open No. 11-399).
17 publication). Specifically, the dye rhodamine (Rhod
LED with an epoxy resin in which amin) is dissolved and dispersed.
Cover the chip.

【0005】(3)LEDチップ状にスパッタリング法
を用いて形成された無機蛍光薄膜により一定の膜厚の蛍
光層を形成する(特開平11−46015号公報)。
(3) A fluorescent layer having a constant film thickness is formed from an inorganic fluorescent thin film formed by a sputtering method in the shape of an LED chip (JP-A-11-46015).

【0006】(4)発光ダイオードの青色光によって励
起発光する蛍光体粉末と、その励起光を散乱させる粉末
を主成分とする波長変換蛍光体物質をアクリル系溶剤で
混合し、指針の光導入部に塗布または印刷して色調交換
層を形成して白色光を得る(特開平11−248493
号公報)。
(4) A phosphor powder which is excited and emitted by blue light of a light emitting diode and a wavelength conversion phosphor substance whose main component is a powder that scatters the excitation light are mixed with an acrylic solvent, and a light introducing part of a pointer is mixed. To obtain white light by applying or printing to a color tone exchange layer (Japanese Patent Application Laid-Open No. 11-248493).
Issue).

【0007】(5)発光ダイオードに、蛍光物質を含む
キャップを着脱可能に装着してLEDの発光色を白色そ
の他の所望の色に変換させる。蛍光物質としては、蛍光
体、蛍光顔料、蛍光染料等を使用する(特開平11−8
7784号公報)。
(5) A cap containing a fluorescent substance is detachably attached to the light emitting diode to convert the emission color of the LED into white or another desired color. A fluorescent substance, a fluorescent pigment, a fluorescent dye or the like is used as the fluorescent substance (Japanese Patent Laid-Open No. 11-8).
7784).

【0008】(6)窒化ガリウム系半導体LEDチップ
の上部に、蛍光体をエポキシ樹脂中に混合分散させたも
のを流し込んで硬化形成させる発光ダイオードを形成す
る(特開2000−252523号公報)。
(6) A light emitting diode is formed on the gallium nitride based semiconductor LED chip, in which a phosphor mixed and dispersed in an epoxy resin is poured and cured to form (JP-A-2000-252523).

【0009】(7)蛍光体として、ポリメタクリル酸エ
ステル等の担体にRhodamin B, Rhodamin 6G, Basic Yel
low HG等の染料を溶解させた有機蛍光体を用いる(特開
平11−46019号公報)。
(7) As a phosphor, Rhodamin B, Rhodamin 6G, Basic Yel is used on a carrier such as polymethacrylic acid ester.
An organic phosphor in which a dye such as low HG is dissolved is used (JP-A-11-46019).

【0010】(8)このほかにも、蛍光体として、Eu
やTb、Nd等の希土類錯体を用いることが提案されて
いる(化学と工業 第53巻 第2号(2000))。
(8) In addition to this, Eu is used as a phosphor.
It has been proposed to use rare earth complexes such as Tb and Nb (Chemicals and Industry, Vol. 53, No. 2 (2000)).

【0011】[0011]

【発明が解決しようとする課題】しかしながら、上記の
各従来の技術においては、次のような問題点があった。
However, each of the above-mentioned conventional techniques has the following problems.

【0012】(1)特開平10−163535号公報に
開示された技術においては、蛍光体は無機粉末であり、
可視光散乱は避けられず、高輝度化に難があった。
(1) In the technique disclosed in JP-A-10-163535, the phosphor is an inorganic powder,
Visible light scattering was unavoidable, and it was difficult to achieve high brightness.

【0013】(2)特開平11−39917号公報に開
示された技術においては、凹部に色素溶解した樹脂を流
し込む形態で、加工性に難があり高精度な色度管理が難
しい。また色素を溶解した樹脂がエポキシ単独では、数
時間の光点灯で色素が劣化して、輝度色度ともに減少し
てしまう。
(2) In the technique disclosed in Japanese Patent Application Laid-Open No. 11-39917, the resin in which the dye is dissolved is poured into the concave portion, which is difficult to process and is difficult to control chromaticity with high accuracy. Further, if the resin in which the dye is dissolved is epoxy alone, the dye is deteriorated by lighting for several hours, and the luminance and chromaticity are reduced.

【0014】(3)特開平11−46015号公報に開
示された技術においては、スパッタリング法によるた
め、真空蒸着装置を必要とし、高額な設備を要する。
(3) In the technique disclosed in Japanese Patent Laid-Open No. 11-46015, since the sputtering method is used, a vacuum vapor deposition apparatus is required and expensive equipment is required.

【0015】(4)特開平11−248493号公報に
開示された技術においては、青色励起光源と蛍光体層の
距離があり、励起光が減少し、輝度が低下する。
(4) In the technique disclosed in Japanese Patent Application Laid-Open No. 11-248493, there is a distance between the blue excitation light source and the phosphor layer, the excitation light is reduced, and the brightness is reduced.

【0016】(5)特開平11−87784号公報に開
示された技術においては、キャップ状の蛍光体含有被覆
物は光源からの距離があり励起光の減少で高輝度化が難
しい。
(5) In the technique disclosed in Japanese Patent Laid-Open No. 11-87784, the cap-shaped phosphor-containing coating is located at a distance from the light source, and it is difficult to increase the brightness because the excitation light is reduced.

【0017】(6)特開2000−252523号公報
に開示された技術においては、2段の凹部に樹脂と共に
蛍光体を流し込み、その沈降によるものであり、発光の
色度管理に難がある。
(6) In the technique disclosed in Japanese Unexamined Patent Publication No. 2000-252523, the phosphor is poured together with the resin into the two-step recesses and the phosphor is allowed to settle, which makes it difficult to control the chromaticity of light emission.

【0018】(7)前記(7)項および(8)項におい
て開示された技術においては単なる有機成分のみの蛍光
色素よりも耐久性に優れたものであるが、PMMA固体
中に溶解、固化したものであり微小なLED表面上へ加
工実装の操作性に問題がある。
(7) The techniques disclosed in the above items (7) and (8) are superior in durability to fluorescent dyes containing only organic components, but are dissolved and solidified in PMMA solids. However, there is a problem in operability of processing and mounting on a minute LED surface.

【0019】本発明は、上記のような問題点を解消する
ものであり、励起光と蛍光ともに透過性に優れ、光散乱
が適切になされることにより、高輝度かつ高度に管理さ
れた色度を得て、かつ蛍光体および樹脂材料の劣化を低
減した光熱耐久性の高い波長変換材料及び発光素子を得
ることを目的とする。
The present invention solves the above-mentioned problems, and has excellent transmissivity for both excitation light and fluorescence, and by appropriate light scattering, it has high brightness and highly controlled chromaticity. In addition, it is an object of the present invention to obtain a wavelength conversion material and a light-emitting device having high photothermal durability and reduced deterioration of the phosphor and the resin material.

【0020】[0020]

【課題を解決するための手段】本発明は、樹脂材料10
0wt%に対して、蛍光材料1〜10wt%と、光ラジ
カル補足剤,熱ラジカル補足剤,酸化防止剤の少なくと
も一つを0.5〜4wt%とを含有させた。
The present invention provides a resin material 10
The fluorescent material was contained in an amount of 1 to 10 wt% and 0.5 to 4 wt% of at least one of a photo radical scavenger, a heat radical scavenger, and an antioxidant with respect to 0 wt%.

【0021】[0021]

【発明の実施の形態】請求項1記載の発明は、樹脂材料
100wt%に対して、蛍光材料1〜10wt%と、光
ラジカル補足剤,熱ラジカル補足剤,酸化防止剤の少な
くとも一つを0.5〜4wt%とを含有させたことを特
徴とする波長変換材料とすることで、蛍光材料もしくは
樹脂材料の少なくとも一方の材料において光,熱,酸化
の少なくとも一つによる劣化を低減できることで、長期
間の使用などによる特性の劣化を防止でき、長寿命を実
現できる。
BEST MODE FOR CARRYING OUT THE INVENTION In the invention described in claim 1, 1 to 10 wt% of a fluorescent material, and at least one of a photo radical scavenger, a heat radical scavenger, and an antioxidant are added to 100 wt% of a resin material. By using a wavelength conversion material characterized by containing 0.5 to 4 wt%, it is possible to reduce deterioration due to at least one of light, heat and oxidation in at least one of the fluorescent material and the resin material. It is possible to prevent deterioration of characteristics due to long-term use and to achieve long life.

【0022】請求項2記載の発明では、樹脂材料として
アクリル樹脂,熱硬化性脂環式エポキシ樹脂,光硬化性
脂環式エポキシ樹脂の少なくとも一つを用いたことを特
徴とする請求項1記載の波長変換材料とすることで、塗
布性などが良好であり、しかもある程度の耐久性を有
し、生産性が良くなる。
According to a second aspect of the present invention, at least one of an acrylic resin, a thermosetting alicyclic epoxy resin, and a photocurable alicyclic epoxy resin is used as the resin material. By using the wavelength conversion material of (1), the coating property and the like are good, the durability is to some extent, and the productivity is good.

【0023】請求項3の発明では、光ラジカル補足剤と
してヒンダードアミンを用い、熱ラジカル補足剤として
ヒンダードフェノールを用い、酸化防止剤としてフェノ
ール系酸化防止剤を用いたことを特徴とする請求項1記
載の波長変換材料とすることで、樹脂材料或いは蛍光材
料の確実に特性劣化を抑えることができる。
The invention of claim 3 is characterized in that a hindered amine is used as a photo radical scavenger, a hindered phenol is used as a heat radical scavenger, and a phenolic antioxidant is used as an antioxidant. By using the described wavelength conversion material, the characteristic deterioration of the resin material or the fluorescent material can be surely suppressed.

【0024】請求項4記載の発明では、蛍光材料とし
て、1分子内に少なくとも1個の芳香族環状分子を含有
する化合物からなる有機蛍光体かもしくは、1分子内に
少なくとも1個の典型もしくは移金属イオンを中心に、
有機分子もしくは無機分子を配位子とする化合物からな
る有機金属錯体蛍光体の少なくとも一つを用いたことを
特徴とする請求項1記載の波長変換材料とすることで、
安定した波長変換を行うことができる。
According to the invention of claim 4, as the fluorescent material, an organic fluorescent substance comprising a compound containing at least one aromatic cyclic molecule in one molecule, or at least one typical or transmissive compound in one molecule. Focusing on metal ions,
The wavelength conversion material according to claim 1, wherein at least one of the organometallic complex phosphors made of a compound having an organic molecule or an inorganic molecule as a ligand is used.
It is possible to perform stable wavelength conversion.

【0025】請求項5記載の発明は、光源と、前記光源
の少なくとも光放出部分を覆う波長変換部とを備え、前
記波長変換部は請求項1〜4いずれか1に記載された波
長変換材料で構成したことを特徴とする発光素子とする
ことで、波長変換部の特性劣化を防止でき、長期間の使
用によっても、放出される光の波長が変化したりするこ
とはない。
The invention according to claim 5 is provided with a light source and a wavelength conversion portion that covers at least a light emitting portion of the light source, and the wavelength conversion portion is the wavelength conversion material according to any one of claims 1 to 4. By using the light-emitting element characterized by being configured as above, deterioration of the characteristics of the wavelength conversion unit can be prevented, and the wavelength of the emitted light does not change even after long-term use.

【0026】請求項6記載の発明は、光源をチップ光源
とし、基板上に設けられた電極パターンに前記チップ光
源の電極を電気的に接続するように実装されたことを特
徴とする請求項5記載の発光素子とすることで、面実装
で光源を基板上に取り付けることができ、生産性が向上
するとともに、大量生産に好ましい形態である。
According to a sixth aspect of the present invention, the light source is a chip light source, and the chip light source is mounted so as to be electrically connected to an electrode pattern provided on the substrate. By using the light emitting device described above, the light source can be mounted on the substrate by surface mounting, which improves productivity and is a preferable form for mass production.

【0027】請求項7記載の発明は、光源から放出され
る光は青色或いは青色よりも波長の短い波長の光である
ことを特徴とする請求項5記載の発光素子とすること
で、白色の光を放出させることが可能となる。
According to a seventh aspect of the present invention, the light emitted from the light source is blue light or light having a wavelength shorter than blue light. It becomes possible to emit light.

【0028】請求項8記載の発明は、波長変換部は光源
から放出された光の一部の波長を長波長側へ変換するこ
とを特徴とする請求項7記載の発光素子とすることで、
俳句色の光を効率よく放出させることができるので、デ
ィスプレー,バックライトや照明などに使用することが
できる。
The invention according to claim 8 is characterized in that the wavelength conversion part converts a part of the wavelength of the light emitted from the light source to the long-wavelength side.
Since it can efficiently emit haiku-colored light, it can be used for displays, backlights and lighting.

【0029】請求項9記載の発明は、光源として、窒化
ガリウムを含むLEDとしたことを特徴とする請求項7
記載の発光素子とすることで、青色以上の短波長の光を
容易に発色させることができ、しかも環境にも優しい。
According to a ninth aspect of the present invention, the light source is an LED containing gallium nitride.
By using the light-emitting element described above, it is possible to easily emit light having a short wavelength of blue or more and to be environmentally friendly.

【0030】請求項10記載の発明は、波長変換部中に
光源を埋設したことを特徴とする請求項5記載の発光素
子とすることで、確実に光源の光放出部を波長変換部で
覆うことができ、しかも塗布や印刷などで容易に実現で
きるので、生産性も向上する。
According to a tenth aspect of the present invention, the light source is embedded in the wavelength conversion section, whereby the light emitting element according to the fifth aspect is reliably covered with the wavelength conversion section. Since it can be realized easily by coating or printing, the productivity is also improved.

【0031】以下、本発明の実施の形態について、図1
を用いて説明する。
FIG. 1 shows an embodiment of the present invention.
Will be explained.

【0032】(実施の形態)図1は本発明の実施の形態
による発光素子の構成を示す断面図であり、図1におい
て1はツェナーダイオードを有するLED基板、2はG
aN系化合物を有するLEDチップ(半導体発光素
子)、で、LEDチップ2は好ましくは青色以上の短波
長の波長を有する光を放出するものが好ましい。3はL
ED基板1に形成されたアノード配線およびカソード配
線とLEDチップ2の電極とを接続するためのバンプ、
4はLEDチップ2の全周を覆うように被覆された波長
変換部である。なお、アノード配線およびカソード配線
とLEDチップ2の電極とを接続する手段として、バン
プを用いたフリップチップ実装のほかにワイヤを用いた
実装方法を用いることもできる。更に波長変換部4はL
EDチップ2の全周を覆うように構成することで確実に
LEDチップ2の光放出部を覆うことができるので、生
産性が向上するが、少なくともLEDチップ2の光放出
部の一部或いは全てに設けることで十分な効果を得るこ
とができる。
(Embodiment) FIG. 1 is a sectional view showing a structure of a light emitting device according to an embodiment of the present invention. In FIG. 1, 1 is an LED substrate having a Zener diode, and 2 is a G substrate.
An LED chip (semiconductor light-emitting device) having an aN-based compound, and the LED chip 2 preferably emits light having a short wavelength of blue or more. 3 is L
Bumps for connecting the anode wiring and the cathode wiring formed on the ED substrate 1 to the electrodes of the LED chip 2,
Reference numeral 4 denotes a wavelength conversion portion which is covered so as to cover the entire circumference of the LED chip 2. As a means for connecting the anode wiring and the cathode wiring to the electrodes of the LED chip 2, a mounting method using a wire can be used in addition to the flip-chip mounting using bumps. Further, the wavelength conversion unit 4 is L
Since the light emitting portion of the LED chip 2 can be surely covered by being configured to cover the entire circumference of the ED chip 2, the productivity is improved, but at least a part or all of the light emitting portion of the LED chip 2 is improved. It is possible to obtain a sufficient effect by providing the above.

【0033】この発光素子の製造工程の例を、図2に示
す本発明の実施の形態における発光素子の製造工程を示
す工程図にしたがって説明する。図2(a)に示すよう
に、LEDチップ2は、LED基板1上に、フリップチ
ップボンディング(FCB)、あるいはワイヤボンディ
ング等の工程により形成され、LEDチップ2がバンプ
3によってLED基板1上に浮き上がった状態に固着さ
れている。
An example of the manufacturing process of this light emitting device will be described with reference to the process diagram showing the manufacturing process of the light emitting device in the embodiment of the present invention shown in FIG. As shown in FIG. 2A, the LED chip 2 is formed on the LED substrate 1 by a process such as flip chip bonding (FCB) or wire bonding, and the LED chip 2 is formed on the LED substrate 1 by the bumps 3. It is fixed in a floating state.

【0034】次に、図2(b)に示すように、波長変換
材料をLEDチップ2の全周を被覆するようにLED基
板1上に形成し、波長変換部4を形成する。
Next, as shown in FIG. 2B, a wavelength converting material is formed on the LED substrate 1 so as to cover the entire circumference of the LED chip 2, and the wavelength converting portion 4 is formed.

【0035】次に、図2(c)に示すように、形成され
た波長変換部4の上面を研削工具10で回転研削する。
Next, as shown in FIG. 2C, the upper surface of the formed wavelength conversion portion 4 is rotationally ground by the grinding tool 10.

【0036】最後に、図2(d)に示すように、カッタ
11でダイシングし、個々のLED素子にカットする。
Finally, as shown in FIG. 2D, dicing is performed by the cutter 11 to cut into individual LED elements.

【0037】以上の工程により、波長変換部4がLED
チップ2の周りに形成される。
Through the above steps, the wavelength conversion unit 4 is the LED
Formed around the chip 2.

【0038】なお、図2(b)の波長変換部4を形成す
る方法としては、次のような手法を用いることができ
る。
As a method of forming the wavelength conversion section 4 of FIG. 2B, the following method can be used.

【0039】(1)スクリーン印刷法 これは、ペースト状の波長変換材料を、マスクを通して
パターン印刷する方法である。
(1) Screen printing method This is a method of pattern-printing a paste-like wavelength conversion material through a mask.

【0040】(2)インクジェット方式 これは、加熱・圧縮・電圧印加等の方法で、インク状の
波長変換材料を吹き付ける方法である。
(2) Inkjet method This is a method of spraying an ink-like wavelength conversion material by a method such as heating, compression and voltage application.

【0041】(3)静電吸着法 これは、粉体(固体)状の波長変換材料を帯電させ、L
EDチップ2上面に静電的に吸着させ、その後コーティ
ングを施すものである。
(3) Electrostatic adsorption method This is a method for charging a powder (solid) wavelength conversion material to L
It is electrostatically adsorbed on the upper surface of the ED chip 2 and then coated.

【0042】(4)樹脂中分散法 これは、流動性を有する波長変換材料をポッティング、
流し込み等で行う。
(4) Dispersion method in resin This is potting of a wavelength converting material having fluidity,
Perform by pouring.

【0043】(5)LB法 これは、蛍光材料を2極性化して界面活性を与えて水面
展開し、単分子膜を作り、その膜をLED基板で引き上
げると同時に付着させる方法である。
(5) LB method This is a method in which a fluorescent material is made to be bipolar and surface-active by giving surface activity to form a monomolecular film, and the film is pulled up by an LED substrate and simultaneously attached.

【0044】(6)キャスト法 これは、蛍光材料を溶解・分散させた流動性のある波長
変換材料をキャスト(滴下)して形成し、基板を回転さ
せて薄膜化するものである。
(6) Casting method In this method, a fluid wavelength conversion material in which a fluorescent material is dissolved and dispersed is cast (dropped) to be formed, and the substrate is rotated to form a thin film.

【0045】(7)フィルム貼付法 これは、フィルム状の波長変換材料を貼り付け、チップ
LEDごとカットするものである。
(7) Film sticking method In this method, a film-shaped wavelength conversion material is stuck and the chip LEDs are cut together.

【0046】(8)沈降法 これは、凹部に樹脂を注入し、そこへ蛍光材料固体を沈
降させる方法である。
(8) Sedimentation method This is a method of injecting a resin into the concave portion and allowing the fluorescent material solid to settle there.

【0047】(9)蒸着法 これは、波長変換部を膜厚5nm〜5μmに薄膜化する
方法であり、均質でかつピンホールが生成しにくいなど
の点から、真空蒸着法が望ましい。薄膜化にこの蒸着法
を用いる場合は、使用する色素化合物の種類、分子堆積
膜の目的とする結晶構造、会合構造により異なる。
(9) Vapor deposition method This is a method of thinning the wavelength conversion portion to a film thickness of 5 nm to 5 μm, and the vacuum vapor deposition method is desirable from the viewpoints of being homogeneous and not easily generating pinholes. When this vapor deposition method is used for thinning, it depends on the type of dye compound used, the desired crystal structure of the molecular deposited film, and the associated structure.

【0048】[0048]

【実施例】以下、上述の波長変換部4を構成する波長変
換材料について本発明の実施例について説明する。
EXAMPLES Examples of the present invention will be described below with respect to the wavelength conversion material forming the wavelength conversion section 4 described above.

【0049】(実施例1)波長変換材料を有機化合物と
した実施例について説明する。有機化合物としては、1
分子内に少なくとも1個の芳香族環状分子を含有する化
合物を用いる。この化合物には、ペリレン、クマリン、
エオシン、ローダミン6G等がある。
(Example 1) An example in which the wavelength conversion material is an organic compound will be described. As an organic compound, 1
A compound containing at least one aromatic cyclic molecule in the molecule is used. This compound includes perylene, coumarin,
There are Eosin, Rhodamine 6G, etc.

【0050】これらの化合物の化学式は次の通りであ
る。
The chemical formulas of these compounds are as follows.

【0051】[0051]

【化1】 [Chemical 1]

【0052】[0052]

【化2】 [Chemical 2]

【0053】[0053]

【化3】 [Chemical 3]

【0054】[0054]

【化4】 [Chemical 4]

【0055】これらの化合物は、少なくとも1個の芳香
族環状分子を含むことにより、この芳香族環状分子が蛍
光を発するときに遷移する光電子の源として作用し、L
EDチップからの光で励起され、より長波長の蛍光を発
するという効果が得られる。
By containing at least one aromatic cyclic molecule, these compounds act as a source of photoelectrons that transit when the aromatic cyclic molecule emits fluorescence, and
The effect of being excited by light from the ED chip and emitting fluorescence of longer wavelength is obtained.

【0056】次に、波長変換部4を有機金属錯体とした
実施例について説明する。有機金属錯体としては、1分
子内に少なくとも1個の典型もしくは遷移金属イオンを
中心に、有機分子もしくは無機分子を配位子とする化合
物を用いる。この化合物には、Eu(TTA)3Phe
n、Tb(acac)3Phen等がある。
Next, an example in which the wavelength conversion section 4 is an organometallic complex will be described. As the organometallic complex, a compound having at least one typical or transition metal ion in the molecule as a center and an organic molecule or an inorganic molecule as a ligand is used. This compound includes Eu (TTA) 3 Phe
n, Tb (acac) 3 Phen and the like.

【0057】これらの化合物の化学式は次の通りであ
る。
The chemical formulas of these compounds are as follows.

【0058】[0058]

【化5】 [Chemical 5]

【0059】[0059]

【化6】 [Chemical 6]

【0060】これらの化合物において、1分子内に少な
くとも1個の典型もしくは遷移金属イオンを中心に、有
機分子もしくは無機分子を配位子とする化合物を含むこ
とにより、この配位子が中心金属の電子を配位子側に引
き寄せるまたは退ける作用をし、中心金属の遷移電子に
影響を及ぼし、蛍光を発するという効果が得られる。次
に波長変換材料を担持する樹脂の実施例について説明す
る。
In these compounds, by including a compound having at least one typical or transition metal ion as a center in one molecule and an organic molecule or an inorganic molecule as a ligand, the ligand has a central metal. It has the effect of attracting or withdrawing electrons to the ligand side, affecting the transition electrons of the central metal, and emitting fluorescence. Next, examples of the resin carrying the wavelength conversion material will be described.

【0061】[0061]

【化7】 [Chemical 7]

【0062】[0062]

【化8】 [Chemical 8]

【0063】[0063]

【化9】 [Chemical 9]

【0064】これらの樹脂において、(化7)は代表的
な熱可塑性樹脂(例えばポリメチルメタクリル酸樹脂
(アクリル))であり、(化8)は代表的な熱硬化性樹
脂(例えば脂環式エポキシ樹脂(熱硬化))であり、
(化9)は代表的な光硬化性樹脂(例えば脂環式エポキ
シ樹脂(光硬化))である。(化7)では、ラジカル活
性な硬化剤を含まず、色素が光および熱により活性化さ
れたラジカルにより劣化される事をを防止する効果が得
られる。(化8)ではポットライフが長く、微細な加工
を施す事ができるという効果が得られる。(化9)では
常温下で光照射による短時間で、微細な加工を施す際に
おいても精密加工を施すという効果が得られる。
Among these resins, (Chemical formula 7) is a typical thermoplastic resin (for example, polymethylmethacrylic acid resin (acrylic)), and (Chemical formula 8) is a typical thermosetting resin (for example, alicyclic). Epoxy resin (thermosetting),
(Chemical Formula 9) is a typical photocurable resin (for example, alicyclic epoxy resin (photocurable)). The chemical formula 7 does not contain a radically active curing agent, and has an effect of preventing the dye from being deteriorated by radicals activated by light and heat. In (Chemical Formula 8), the pot life is long and the effect that fine processing can be performed is obtained. With (Chem. 9), it is possible to obtain an effect that precision processing is performed even when performing fine processing in a short time by light irradiation at room temperature.

【0065】なお、本実施例では、上記各樹脂材料を一
つずつ用いたが、各樹脂材料を混合しても良いし、上記
各樹脂材料の少なくとも一つで構成された樹脂材料に
は、発光特性などに影響を及ばさない程度の他の樹脂材
料や無機材料を加えても良い。
In this embodiment, each of the above resin materials is used one by one, but the resin materials may be mixed, and the resin material composed of at least one of the above resin materials may be mixed. Other resin materials and inorganic materials may be added to the extent that they do not affect the light emission characteristics and the like.

【0066】[0066]

【化10】 [Chemical 10]

【0067】[0067]

【化11】 [Chemical 11]

【0068】[0068]

【化12】 [Chemical 12]

【0069】これらの化合物において、(化10)は代
表的な光ラジカル補足剤(例えばヒンダードアミン)で
あり、系中に発生したラジカル電子をトラップして活性
を無くして色素の光安定性を得るという効果が得られ
る。(化11)は代表的な熱ラジカル補足剤(例えばヒ
ンダードフェノール)であり、熱により系中に発生した
ラジカル電子をトラップして活性を無くして色素の光安
定性を得るという効果が得られる。(化12)は代表的
な酸化防止剤(フェノール系酸化防止剤)であり、系中
に発生したラジカル電子をトラップして活性を無くして
色素および樹脂の劣化を防ぐという効果が得られる。な
お、本実施の形態では、光ラジカル補足剤,熱ラジカル
補足剤,酸化防止剤(以下安定剤と略す)の3つをとも
に樹脂材料中に設けたが、発光素子の使用環境などを考
慮して少なくとも一つを含ませても良い。
In these compounds, (Chemical Formula 10) is a typical photo-radical scavenger (for example, hindered amine), which traps radical electrons generated in the system to lose the activity and obtain the photostability of the dye. The effect is obtained. (Chemical Formula 11) is a typical heat radical scavenger (for example, hindered phenol), which has the effect of trapping radical electrons generated in the system by heat to lose activity and obtain the photostability of the dye. . (Chemical Formula 12) is a typical antioxidant (phenolic antioxidant), which has an effect of trapping radical electrons generated in the system to lose its activity and preventing deterioration of the dye and the resin. In the present embodiment, the photo radical scavenger, the heat radical scavenger, and the antioxidant (hereinafter abbreviated as stabilizers) are all provided in the resin material. May include at least one.

【0070】例えば、白色半導体発光素子を作成する際
においては、前記(化1)〜(化6)に代表される有機
蛍光材料を、1〜10wt%の重量比の範囲で、前記
(化7)〜(化9)に代表される樹脂材料100wt%
に分散させる。この際に前記(化10)〜(化12)に
代表される光ラジカル補足剤,熱ラジカル補足剤もしく
は酸化防止剤をそれぞれ、0.5〜4wt%重量比の範
囲で添加する。有機蛍光材料が1wt%より少ないと十
分な波長変換特性を得ることができず、10wt%を超
えると光量がすくなってしまう可能性がある。また安定
化剤が0.5wt%よりも少ないと十分な樹脂材料や蛍
光材料の劣化を防止できず、4wt%以上であると光量
が少なくなってしまう可能性がある。
For example, when a white semiconductor light emitting device is produced, the organic fluorescent material represented by the above (Chemical formula 1) to (Chemical formula 6) is used in the above (Chemical formula 7) within a weight ratio range of 1 to 10 wt%. ) To (Chemical Formula 9) resin material represented by 100 wt%
Disperse into At this time, the photo radical scavenger, the heat radical scavenger, or the antioxidant represented by (Chemical Formula 10) to (Chemical Formula 12) is added in a range of 0.5 to 4 wt% by weight, respectively. If the amount of the organic fluorescent material is less than 1 wt%, sufficient wavelength conversion characteristics cannot be obtained, and if it exceeds 10 wt%, the light amount may be reduced. Further, if the amount of the stabilizer is less than 0.5 wt%, sufficient deterioration of the resin material or the fluorescent material cannot be prevented, and if it is 4 wt% or more, the light amount may be reduced.

【0071】これらの添加により得られた波長変換材料
のペースト状などのものを、励起光源となるLEDチッ
プ2の上面に、10〜200μm厚みの範囲で塗布し、
充分に乾燥させ、波長変換部4を作製する。この時、波
長変換部4の膜厚が10μmより小さいと十分にLED
チップ2〜の光を十分に波長変換することが困難とな
り、膜厚が200μmを超えると、波長変換部4で吸収
されてしまう光が多くなってしまい光量が思うようにえ
られない。
A paste or the like of the wavelength conversion material obtained by adding these is applied to the upper surface of the LED chip 2 serving as an excitation light source in a thickness range of 10 to 200 μm,
It is sufficiently dried to produce the wavelength conversion section 4. At this time, if the film thickness of the wavelength conversion unit 4 is smaller than 10 μm, the LED will be sufficient.
It becomes difficult to sufficiently convert the wavelengths of light from the chips 2 to 2. When the film thickness exceeds 200 μm, a large amount of light is absorbed by the wavelength conversion unit 4, and the amount of light cannot be expected.

【0072】これらの(化10)・(化11)・(化1
2)の化合物を樹脂に添加した際の、発光素子における
発光スペクトルを図3に示す。短波長側のピークは青色
の励起光によるものであり、長波長側のピークは蛍光材
料から発光されるものである。青色の励起光は一部が蛍
光材料を励起してより長波長の蛍光として変換され、発
光する。残りの励起光は青色のまま外部へ放射される。
蛍光材料により変換された蛍光が、元の励起光の補色で
あれば、合わさった光は白色光となる。図3に示す様
に、(化10)・(化11)・(化12)を添加した後
も、スペクトル中の2つのピークの波長は変動せず、白
色発光が保たれている事が分かる。
These (formula 10), (formula 11), and (formula 1)
FIG. 3 shows the emission spectrum of the light emitting device when the compound of 2) was added to the resin. The peak on the short wavelength side is due to blue excitation light, and the peak on the long wavelength side is emitted from the fluorescent material. Part of the blue excitation light excites the fluorescent material and is converted into longer-wavelength fluorescence to emit light. The remaining excitation light is emitted to the outside in the blue color.
If the fluorescence converted by the fluorescent material is a complementary color of the original excitation light, the combined light becomes white light. As shown in FIG. 3, after adding (Chemical Formula 10), (Chemical Formula 11), and (Chemical Formula 12), it can be seen that the wavelengths of the two peaks in the spectrum do not fluctuate and white light emission is maintained. .

【0073】図4は蛍光材料の連続点灯時における、長
波長側蛍光の発光強度の経時変化を示すものである(化
10)・(化11)・(化12)の化合物を樹脂に添加
した際の経時変化での、影響が示される。アクリル樹脂
単独の時に比べ、(化10)・(化11)・(化12)
を添加した系では、長波長側蛍光の発光が、より長く残
存することがわかる。
FIG. 4 shows changes with time in the emission intensity of long-wavelength side fluorescent light during continuous lighting of the fluorescent material. The compounds of (Chemical formula 10), (Chemical formula 11) and (Chemical formula 12) were added to the resin. The effect of the change over time is shown. (Chemical formula 10) / (Chemical formula 11) / (Chemical formula 12)
It can be seen that in the system in which is added, the fluorescence emission of the long wavelength side remains longer.

【0074】図5はこれら(化10)・(化11)・
(化12)の化合物添加した際の発光強度の寿命を示す
ものである。図4,図5から判るように安定剤を添加す
ることで、発光寿命及び強度が長くなることが判る。
(化10)の添加で約2倍、(化11)・(化12)の
添加では、約8倍以上も長波長側蛍光の発光寿命が延び
る事が分かる。
FIG. 5 shows these (formula 10), (formula 11), and
It shows the lifetime of the emission intensity when the compound of Chemical formula 12 is added. As can be seen from FIGS. 4 and 5, it is understood that the emission lifetime and the intensity are increased by adding the stabilizer.
It can be seen that the addition of (Chemical formula 10) increases the emission lifetime of long-wavelength fluorescence by about 2 times, and the addition of (Chemical formula 11) and (Chemical formula 12) extends by about 8 times or more.

【0075】[0075]

【発明の効果】本発明は、樹脂材料100wt%に対し
て、蛍光材料1〜10wt%と、光ラジカル補足剤,熱
ラジカル補足剤,酸化防止剤の少なくとも一つを0.5
〜4wt%とを含有させたことで、蛍光材料もしくは樹
脂材料の少なくとも一方の材料において光,熱,酸化の
少なくとも一つによる劣化を低減できることで、長期間
の使用などによる特性の劣化を防止でき、長寿命を実現
できる。
According to the present invention, 1 to 10 wt% of the fluorescent material and 0.5 to 0.5 wt% of the photo radical scavenger, the heat radical scavenger and the antioxidant are added to 100 wt% of the resin material.
By containing ~ 4 wt%, it is possible to reduce the deterioration of at least one of the fluorescent material and the resin material due to at least one of light, heat, and oxidation, so that the deterioration of the characteristics due to long-term use can be prevented. , Long life can be realized.

【0076】また、基板上の電極パターンとLEDチッ
プの電極をバンプを介して接続する構成とすることによ
り、フリップチップ法を用いた製造方法が適用できる。
Further, by adopting a structure in which the electrode pattern on the substrate and the electrode of the LED chip are connected via the bump, the manufacturing method using the flip chip method can be applied.

【0077】波長変換材料を、1分子内に少なくとも1
個の芳香族環状分子を含有する化合物からなる有機蛍光
体とすることにより、溶媒・樹脂などに溶解、分散が容
易となる。
At least one wavelength conversion material is used in one molecule.
By using an organic phosphor made of a compound containing individual aromatic cyclic molecules, the organic phosphor can be easily dissolved and dispersed in a solvent, a resin, or the like.

【0078】波長変換材料を、1分子内に少なくとも1
個の典型もしくは遷移金属イオンを中心に、有機分子も
しくは無機分子を配位子とする化合物からなる有機金属
錯体蛍光体とすることにより、溶媒・樹脂などに溶解、
分散が容易となる。
At least one wavelength conversion material is used in one molecule.
Dissolving in a solvent, a resin, etc. by using an organometallic complex phosphor composed of a compound having an organic molecule or an inorganic molecule as a ligand, centered on individual typical or transition metal ions,
Dispersion becomes easy.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の形態による発光素子の構成を示
す断面図
FIG. 1 is a sectional view showing a structure of a light emitting device according to an embodiment of the present invention.

【図2】本発明の実施の形態における発光素子の製造工
程を示す工程図
FIG. 2 is a process drawing showing a manufacturing process of a light emitting device according to an embodiment of the present invention.

【図3】本発明の実施の形態による発光素子の発光特性
のスペクトルを示す図
FIG. 3 is a diagram showing a spectrum of emission characteristics of a light emitting device according to an embodiment of the present invention.

【図4】本発明の実施の形態による発光素子発光の経時
変化を示すグラフ
FIG. 4 is a graph showing changes over time in light emission of the light emitting element according to the embodiment of the present invention.

【図5】本発明の実施の形態による発光素子の蛍光強度
寿命を示すグラフ
FIG. 5 is a graph showing a fluorescence intensity lifetime of a light emitting device according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 LED基板 2 LEDチップ 3 バンプ 4 波長変換部 10 研削工具 11 カッタ 1 LED board 2 LED chips 3 bumps 4 Wavelength converter 10 grinding tools 11 cutter

───────────────────────────────────────────────────── フロントページの続き (72)発明者 坂上 恵 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Fターム(参考) 5F041 AA11 AA43 AA44 CA40 DA44 DA46    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Megumi Sakagami             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 5F041 AA11 AA43 AA44 CA40 DA44                       DA46

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】樹脂材料100wt%に対して、蛍光材料
1〜10wt%と、光ラジカル補足剤,熱ラジカル補足
剤,酸化防止剤の少なくとも一つを0.5〜4wt%と
を含有させたことを特徴とする波長変換材料。
1. A fluorescent material in an amount of 1 to 10 wt% and at least one of a photo radical scavenger, a heat radical scavenger, and an antioxidant in an amount of 0.5 to 4 wt% with respect to 100 wt% of a resin material. A wavelength conversion material characterized in that
【請求項2】樹脂材料としてアクリル樹脂,熱硬化性脂
環式エポキシ樹脂,光硬化性脂環式エポキシ樹脂の少な
くとも一つを用いたことを特徴とする請求項1記載の波
長変換材料。
2. The wavelength conversion material according to claim 1, wherein at least one of an acrylic resin, a thermosetting alicyclic epoxy resin, and a photocurable alicyclic epoxy resin is used as the resin material.
【請求項3】光ラジカル補足剤としてヒンダードアミン
を用い、熱ラジカル補足剤としてヒンダードフェノール
を用い、酸化防止剤としてフェノール系酸化防止剤を用
いたことを特徴とする請求項1記載の波長変換材料。
3. The wavelength conversion material according to claim 1, wherein a hindered amine is used as a photo radical scavenger, a hindered phenol is used as a heat radical scavenger, and a phenolic antioxidant is used as an antioxidant. .
【請求項4】蛍光材料が、1分子内に少なくとも1個の
芳香族環状分子を含有する化合物からなる有機蛍光体か
もしくは、1分子内に少なくとも1個の典型もしくは移
金属イオンを中心に、有機分子もしくは無機分子を配位
子とする化合物からなる有機金属錯体蛍光体の、少なく
とも一つを用いたことを特徴とする請求項1記載の波長
変換材料。
4. An organic fluorescent substance comprising a compound containing at least one aromatic cyclic molecule in one molecule, or at least one typical or transfer metal ion in one molecule. 2. The wavelength conversion material according to claim 1, wherein at least one of organometallic complex phosphors made of a compound having an organic molecule or an inorganic molecule as a ligand is used.
【請求項5】光源と、前記光源の少なくとも光放出部分
を覆う波長変換部とを備え、前記波長変換部は請求項1
〜4いずれか1に記載された波長変換材料で構成したこ
とを特徴とする発光素子。
5. A light source, and a wavelength conversion section that covers at least a light emitting portion of the light source, wherein the wavelength conversion section is defined by claim 1.
[4] A light emitting device comprising the wavelength conversion material according to any one of [4] to [4].
【請求項6】光源をチップ光源とし、基板上に設けられ
た電極パターンに前記チップ光源の電極を電気的に接続
するように実装されたことを特徴とする請求項5記載の
発光素子。
6. The light emitting device according to claim 5, wherein the light source is a chip light source and is mounted so as to electrically connect electrodes of the chip light source to an electrode pattern provided on a substrate.
【請求項7】光源から放出される光は青色或いは青色よ
りも波長の短い波長の光であることを特徴とする請求項
5記載の発光素子。
7. The light emitting device according to claim 5, wherein the light emitted from the light source is blue or light having a wavelength shorter than blue.
【請求項8】波長変換部は光源から放出された光の一部
の波長を長波長側へ変換することを特徴とする請求項7
記載の発光素子。
8. The wavelength conversion unit converts a part of the wavelength of the light emitted from the light source to the long wavelength side.
The light emitting device described.
【請求項9】光源として、窒化ガリウムを含むLEDと
したことを特徴とする請求項7記載の発光素子。
9. The light emitting device according to claim 7, wherein the light source is an LED containing gallium nitride.
【請求項10】波長変換部中に光源を埋設したことを特
徴とする請求項5記載の発光素子。
10. The light emitting device according to claim 5, wherein a light source is embedded in the wavelength conversion section.
JP2001364083A 2001-11-29 2001-11-29 Wavelength conversion material and light emitting element Withdrawn JP2003163376A (en)

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