JP2005159263A - Light-emitting device and lighting system - Google Patents

Light-emitting device and lighting system Download PDF

Info

Publication number
JP2005159263A
JP2005159263A JP2004071430A JP2004071430A JP2005159263A JP 2005159263 A JP2005159263 A JP 2005159263A JP 2004071430 A JP2004071430 A JP 2004071430A JP 2004071430 A JP2004071430 A JP 2004071430A JP 2005159263 A JP2005159263 A JP 2005159263A
Authority
JP
Japan
Prior art keywords
light
light emitting
emitting element
reflecting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004071430A
Other languages
Japanese (ja)
Other versions
JP3921474B2 (en
Inventor
Mitsuo Yanagisawa
美津夫 柳沢
Daisuke Sakumoto
大輔 作本
Shingo Matsuura
真吾 松浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2004071430A priority Critical patent/JP3921474B2/en
Priority to TW093133106A priority patent/TWI245436B/en
Priority to US10/978,302 priority patent/US20050133808A1/en
Priority to KR1020040087566A priority patent/KR20050041986A/en
Priority to CNB2004100900711A priority patent/CN100392877C/en
Priority to DE102004052902A priority patent/DE102004052902B4/en
Publication of JP2005159263A publication Critical patent/JP2005159263A/en
Priority to KR1020060069330A priority patent/KR20060107428A/en
Application granted granted Critical
Publication of JP3921474B2 publication Critical patent/JP3921474B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device, in which the light emitted by a light-emitting element is efficiently wavelength-converted by a fluorescent material and the radiant intensity is strengthened, to yield superior light characteristics, such as on-axis brightness, luminance, and color-rendering properties. <P>SOLUTION: The light-emitting device comprises a base body 1; a reflecting member 2, in the central part of the upper-side main surface of which a convex-shaped mounting section 2b on which the light-emitting element 5 is mounted is formed, and in which a side-wall section 2a is formed, wherein the outer peripheral part of the upper-side main surface of the reflecting member 2 surrounds the mounting section 2b and the inner peripheral face of the reflecting member 2 is made to be a reflecting face 2c that reflects the light emitted from the light-emitting element 5, with the light-emitting element 5 mounted on the mounting section 2b; and a transparent member 3, which is so formed as to cover the light-emitting element 5 at the inner side of the side-wall section 2a and contains the fluorescent material 4 that wavelength-converts the light emitted by the light-emitting element 5. The lower end of the reflecting face 2c is positioned on or below the optical path line, which connects the light-emitting part that positions at the ends of the light-emitting element 5 and a corner formed by the upper face 2d and a side face of the mounting section 2b, while the distance between the upper face of the transparent member 3 and the light-emitting part is between 0.1 mm and 0.5 mm. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、発光素子から発光される光を蛍光体で波長変換し外部に発光する発光装置およびそれを用いた照明装置に関する。   The present invention relates to a light emitting device that converts the wavelength of light emitted from a light emitting element with a phosphor and emits light to the outside, and an illumination device using the same.

従来の発光ダイオード(LED)等の発光素子15から発光される近紫外線光や青色光等の光を赤色,緑色,青色,黄色等の複数の蛍光体14で長波長側に波長変換して白色発光する発光装置を図8に示す。図8において、発光装置は、上面の中央部に発光素子15を載置するための載置部11aを有し、載置部11aおよびその周辺から発光装置の内外を電気的に導通接続するリード端子やメタライズ配線等からなる配線導体(図示せず)が形成された絶縁体からなる基体11と、基体11上面に接着固定され、上側開口が下側開口より大きい貫通孔12aが形成されているとともに、内周面が発光素子15が発光する光を反射する反射面12bとされている枠状の枠体12と、枠体12の内部に充填され発光素子15が発光する光を励起し長波長側に波長変換する蛍光体14を含有した透明樹脂13と、載置部11aに載置固定された発光素子15とから主に構成されている。   Light is converted into white by converting the wavelength of near-ultraviolet light or blue light emitted from the light emitting element 15 such as a conventional light emitting diode (LED) to the long wavelength side with a plurality of phosphors 14 such as red, green, blue, and yellow. A light-emitting device that emits light is shown in FIG. In FIG. 8, the light emitting device has a mounting portion 11a for mounting the light emitting element 15 in the center of the upper surface, and leads that electrically connect the inside and outside of the light emitting device from the mounting portion 11a and its periphery. A base 11 made of an insulator on which a wiring conductor (not shown) made of a terminal, metallized wiring, or the like is formed, and a through hole 12a that is bonded and fixed to the upper surface of the base 11 and whose upper opening is larger than the lower opening are formed. In addition, a frame-like frame 12 whose inner peripheral surface is a reflecting surface 12b that reflects the light emitted from the light-emitting element 15, and the light that is emitted from the light-emitting element 15 that is filled in the frame 12 is excited. It is mainly composed of a transparent resin 13 containing a phosphor 14 for wavelength conversion on the wavelength side, and a light emitting element 15 mounted and fixed on the mounting portion 11a.

基体11は、酸化アルミニウム質焼結体(アルミナセラミックス)や窒化アルミニウム質焼結体,ムライト質焼結体,ガラスセラミックス等のセラミックス、またはエポキシ樹脂等の樹脂から成る。基体11がセラミックスから成る場合、その上面や内部に配線導体がタングステン(W),モリブデン(Mo)−マンガン(Mn)等から成る金属ペーストを高温で焼成して形成される。また、基体11が樹脂から成る場合、銅(Cu)や鉄(Fe)−ニッケル(Ni)合金等から成るリード端子がモールド成型されて基体11の内部に設置固定される。   The substrate 11 is made of an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, ceramics such as glass ceramics, or a resin such as epoxy resin. When the substrate 11 is made of ceramics, the wiring conductor is formed on the upper surface or inside thereof by firing a metal paste made of tungsten (W), molybdenum (Mo) -manganese (Mn), or the like at a high temperature. When the base 11 is made of a resin, lead terminals made of copper (Cu), iron (Fe) -nickel (Ni) alloy, etc. are molded and fixed inside the base 11.

また、枠体12は、上側開口が下側開口より大きい貫通孔12aが形成されるとともに内周面に光を反射する反射面12bとされた枠状となっている。具体的には、アルミニウム(Al)やFe−Ni−コバルト(Co)合金等の金属、アルミナセラミックス等のセラミックスまたはエポキシ樹脂等の樹脂から成り、切削加工や金型成型または押し出し成型等の成形技術により形成される。   Further, the frame body 12 has a frame shape in which a through hole 12a having an upper opening larger than the lower opening is formed and a reflection surface 12b that reflects light on an inner peripheral surface. Specifically, it consists of metals such as aluminum (Al) and Fe-Ni-cobalt (Co) alloys, ceramics such as alumina ceramics or resins such as epoxy resins, and molding technologies such as cutting, die molding or extrusion molding. It is formed by.

さらに、枠体12の反射面12bは、貫通孔12aの内周面を研磨して平坦化することにより、あるいは、貫通孔12aの内周面にAl等の金属を蒸着法やメッキ法により被着することにより形成される。そして、枠体12は、半田,銀(Ag)ロウ等のロウ材または樹脂接着材等の接合材により、載置部11aを枠体12の内周面で取り囲むように基体11の上面に接合される。   Further, the reflecting surface 12b of the frame body 12 is coated by polishing and flattening the inner peripheral surface of the through hole 12a or by depositing a metal such as Al on the inner peripheral surface of the through hole 12a by vapor deposition or plating. It is formed by wearing. The frame 12 is bonded to the upper surface of the base 11 by a soldering material such as solder, silver (Ag) brazing, or a bonding material such as a resin adhesive so as to surround the mounting portion 11a with the inner peripheral surface of the frame 12. Is done.

そして、載置部11aの周辺に配置した配線導体と発光素子15とをボンディングワイヤや金属バンプ等の電気接続手段16を介して電気的に接続し、しかる後、蛍光体14を含有するエポキシ樹脂やシリコーン樹脂等の透明樹脂13をディスペンサー等の注入機で発光素子15を覆うように枠体12の内部に充填しオーブンで熱硬化させることで、発光素子15からの光を蛍光体14により長波長変換し所望の波長スペクトルを有する光を取り出せる発光装置となし得る。
特開2003-37298号公報
Then, the wiring conductor arranged around the mounting portion 11a and the light emitting element 15 are electrically connected through the electrical connection means 16 such as a bonding wire or a metal bump, and thereafter, an epoxy resin containing the phosphor 14 A transparent resin 13 such as silicone resin is filled in the frame 12 so as to cover the light emitting element 15 with an injection machine such as a dispenser, and is thermally cured in an oven, so that the light from the light emitting element 15 is extended by the phosphor 14. A light-emitting device capable of extracting light having a desired wavelength spectrum after wavelength conversion can be obtained.
Japanese Patent Laid-Open No. 2003-37298

近年、発光装置の放射強度をさらに高めることが望まれている。しかしながら、上記従来の発光装置においては、放射強度を高めるために発光素子15に入力する電流値をより大きくすると、発光素子15の接合部温度(ジャンクション温度)が上昇し発光素子15の発光効率が著しく低下するため、入力する電流に比例した放射強度が得られないという問題点を有していた。さらに、熱に起因すると予測される発光波長のズレにより安定した放射強度が得られないという問題点を有していた。   In recent years, it has been desired to further increase the radiation intensity of the light emitting device. However, in the conventional light emitting device, when the current value input to the light emitting element 15 is increased to increase the radiation intensity, the junction temperature (junction temperature) of the light emitting element 15 is increased and the light emission efficiency of the light emitting element 15 is increased. Since it significantly decreases, there is a problem in that a radiation intensity proportional to the input current cannot be obtained. Furthermore, there has been a problem that a stable radiation intensity cannot be obtained due to a shift in emission wavelength that is expected to be caused by heat.

また、発光素子15を被覆するとともに発光素子15からの光を波長変換するための蛍光体14を含有した透明樹脂13において、蛍光体14の含有率を上げて波長変換の効率を向上させようとすると、光が蛍光体14によって妨害され易くなるため、放射強度を向上できないという問題点を有していた。   Further, in the transparent resin 13 that covers the light emitting element 15 and contains the phosphor 14 for wavelength conversion of light from the light emitting element 15, the content of the phosphor 14 is increased to improve the efficiency of wavelength conversion. Then, since the light is easily disturbed by the phosphor 14, the radiation intensity cannot be improved.

また逆に、蛍光体14の含有率を下げると、波長変換の効率が低下して所望の波長の光が得られず、その結果、放射強度の向上ができないという問題点を有していた。   On the other hand, when the content of the phosphor 14 is lowered, the wavelength conversion efficiency is lowered, and light having a desired wavelength cannot be obtained. As a result, there is a problem that the radiation intensity cannot be improved.

さらに、発光素子15から発生した熱が基体11を伝達して枠体12に伝わり易く、枠体12と基体11との熱膨張差によって枠体12が熱膨張して変形し、放射角度がばらついたり放射強度が低下するという問題点も有していた。   Further, heat generated from the light emitting element 15 is easily transmitted to the frame body 12 through the base body 11, and the frame body 12 is thermally expanded and deformed due to a difference in thermal expansion between the frame body 12 and the base body 11, and the radiation angle varies. There is also a problem that the radiation intensity is reduced.

したがって、本発明は上記従来の問題点に鑑みて完成されたものであり、その目的は、発光素子の発光する光を蛍光体により効率よく波長変換するとともに放射強度を高くして軸上光度や輝度,演色性等の光特性に優れたものとし、また、発光素子の熱を良好に放熱して放射特性を長期にわたり安定に維持することのできる発光装置を提供することである。   Therefore, the present invention has been completed in view of the above-mentioned conventional problems, and its purpose is to efficiently convert the wavelength of the light emitted from the light emitting element with a phosphor and increase the radiation intensity to increase the axial luminous intensity. An object of the present invention is to provide a light-emitting device that has excellent light characteristics such as luminance and color rendering properties, and that can efficiently dissipate heat from the light-emitting element and stably maintain radiation characteristics over a long period of time.

本発明の発光装置は、平板状の基体と、該基体の上面に接合され、上側主面の中央部に発光素子が上面に載置される凸状の載置部が形成され、上側主面の外周部に前記載置部を囲繞するとともにその内周面が前記発光素子が発光する光を反射する反射面とされた側壁部が形成された反射部材と、前記載置部に載置される発光素子と、前記側壁部の内側に前記発光素子を覆うように設けられ、前記発光素子が発光する光を波長変換する蛍光体を含有する透光性部材とを具備しており、前記反射面は、下端が前記発光素子の端部に位置する発光部と前記載置部の上面および側面の間の角とを結ぶ光路線上または該光路線よりも下側に位置しており、前記透光性部材は、その上面と前記発光部との間の距離が0.1乃至0.5mmであることを特徴とする。   The light-emitting device of the present invention includes a flat substrate, a convex mounting portion that is bonded to the upper surface of the substrate, and on which the light-emitting element is mounted on the upper surface of the upper main surface. A reflective member having a side wall portion that surrounds the mounting portion on the outer peripheral portion thereof and whose inner peripheral surface is a reflective surface that reflects light emitted from the light emitting element, and is mounted on the mounting portion. And a light-transmitting member provided inside the side wall portion so as to cover the light-emitting element and containing a phosphor that converts the wavelength of light emitted from the light-emitting element. The surface is located on or below the optical path connecting the light emitting portion whose lower end is positioned at the end of the light emitting element and the corner between the upper surface and the side surface of the mounting portion, The distance between the upper surface of the optical member and the light emitting part is 0.1 to 0.5 mm. To.

本発明の発光装置において、好ましくは、前記基体が絶縁体であるとともにその上面から外面にかけて配線導体が形成されており、前記反射部材は前記載置部の周囲に上下主面間を貫通するとともに前記光路線よりも下側に位置する貫通孔が形成されており、前記発光素子の電極と前記基体の上面の前記配線導体とが前記貫通孔を通してワイヤにより電気的に接続されていることを特徴とする。   In the light emitting device of the present invention, preferably, the base is an insulator and a wiring conductor is formed from the upper surface to the outer surface, and the reflecting member penetrates between the upper and lower main surfaces around the mounting portion. A through hole located below the optical path is formed, and the electrode of the light emitting element and the wiring conductor on the upper surface of the base are electrically connected by a wire through the through hole. And

本発明の発光装置において、好ましくは、前記貫通孔は、その内部に前記反射部材の上側主面と面一となるように、絶縁性の光反射粒子を含有した絶縁性ペーストが充填されていることを特徴とする。   In the light emitting device of the present invention, preferably, the through hole is filled with an insulating paste containing insulating light reflecting particles so as to be flush with the upper main surface of the reflecting member. It is characterized by that.

本発明の照明装置は、上記本発明の発光装置を所定の配置となるように設置したことを特徴とする。   The illuminating device of the present invention is characterized in that the light emitting device of the present invention is installed in a predetermined arrangement.

本発明の発光装置は、平板状の基体と、基体の上面に接合され、上側主面の中央部に発光素子が上面に載置される凸状の載置部が形成され、上側主面の外周部に載置部を囲繞するとともにその内周面が発光素子が発光する光を反射する反射面とされた側壁部が形成された反射部材と、載置部に載置される発光素子と、側壁部の内側に発光素子を覆うように設けられ、発光素子が発光する光を波長変換する蛍光体を含有する透光性部材とを具備しており、反射面は、下端が前記発光素子の端部に位置する発光部と載置部の上面および側面の間の角とを結ぶ光路線上または光路線よりも下側に位置しており、透光性部材は、その上面と前記発光部との間の距離が0.1乃至0.5mmであることから、発光素子から発せられる光のうち、反射面で反射されることなく直接発光素子から上側に放射される光を非常に強度の高いものとすることができる。即ち、発光素子から発せられた光を、発光素子の発光部より上側の一定の厚さの透光性部材に含まれる蛍光体によって高効率に波長変換し、それらの波長変換した光を蛍光体に妨害されることなく直接透光性部材の外部に放出することができる。その結果、発光装置の放射強度を高めて、軸上光度や輝度,演色性等の光特性を良好なものとし得る。   The light emitting device of the present invention has a flat base, a convex mounting portion that is bonded to the upper surface of the base, and has a light emitting element mounted on the upper surface at the center of the upper main surface. A reflecting member having a side wall portion that surrounds the mounting portion on the outer peripheral portion and whose inner peripheral surface is a reflecting surface that reflects light emitted from the light emitting element, and a light emitting element mounted on the mounting portion And a translucent member containing a phosphor that converts the wavelength of light emitted by the light emitting element, and is provided on the inner side of the side wall portion. The light-transmitting member is located on or below the optical path connecting the light emitting part located at the end of the mounting part and the corner between the upper surface and the side surface of the mounting part, and the translucent member includes the upper surface and the light emitting part. Of the light emitted from the light emitting element is reflected by the reflecting surface. It can be made very high strength with light emitted directly from the light emitting element on the upper side without. That is, the light emitted from the light emitting element is wavelength-converted with high efficiency by the phosphor contained in the translucent member having a certain thickness above the light emitting portion of the light emitting element, and the wavelength-converted light is converted into the phosphor. It can be directly emitted to the outside of the translucent member without being obstructed. As a result, the light intensity of the light emitting device can be increased, and the light characteristics such as the on-axis luminous intensity, luminance, and color rendering can be improved.

また、発光素子から発生した熱は、一体化した載置部から側壁部に伝えられ易く、特に反射部材が金属から成る場合には、熱は速やかに側壁部へ伝えられるとともに側壁部の外側面から外部に良好に放散される。そのため、基体と反射部材との熱膨張差によって反射部材が変形するのを有効に抑制することができ、長期にわたり放射光の光特性を良好に維持できる。   Further, the heat generated from the light emitting element is easily transferred from the integrated mounting portion to the side wall portion. In particular, when the reflecting member is made of metal, the heat is quickly transferred to the side wall portion and the outer surface of the side wall portion. Is dissipated well to the outside. Therefore, it is possible to effectively suppress the deformation of the reflecting member due to the difference in thermal expansion between the base and the reflecting member, and it is possible to maintain the light characteristics of the emitted light well over a long period of time.

さらに、反射面は、下端が発光素子の端部に位置する発光部と載置部の上面および側面の間の角とを結ぶ光路線上または光路線よりも下側に位置していることから、発光素子から横方向や下側方向に発光された直接光を効率よく反射面で反射することができ、放射光強度をきわめて高いものとすることができる。   Furthermore, since the reflecting surface is located on the optical path connecting the light emitting unit located at the end of the light emitting element and the corner between the upper surface and the side surface of the mounting unit or below the optical path, Direct light emitted from the light emitting element in the lateral direction or the lower direction can be efficiently reflected by the reflecting surface, and the emitted light intensity can be made extremely high.

本発明の発光装置は、基体が絶縁体であるとともにその上面から外面にかけて配線導体が形成されており、反射部材は載置部の周囲に上下主面間を貫通するとともに光路線よりも下側に位置する貫通孔が形成されており、発光素子の電極と基体の上面の配線導体とが貫通孔を通してワイヤにより電気的に接続されていることから、発光素子から発光された直接光が反射部材に設けたワイヤを通すための貫通孔よりも上側で反射面により反射されることとなり、直接光が貫通孔内に入り込んで吸収されるのを有効に防止して放射光強度を高めることができる。   In the light emitting device of the present invention, the base is an insulator and a wiring conductor is formed from the upper surface to the outer surface, and the reflecting member penetrates between the upper and lower main surfaces around the mounting portion and is lower than the optical path Through-holes are formed, and the electrode of the light-emitting element and the wiring conductor on the upper surface of the base are electrically connected by a wire through the through-hole, so that the direct light emitted from the light-emitting element is reflected by the reflecting member It is reflected by the reflecting surface above the through hole for passing the wire provided in the wire, and it is possible to effectively prevent direct light from entering and being absorbed into the through hole and to increase the emitted light intensity. .

また、発光素子の下面を反射部材の載置部に全面で接合させることができ、発光素子の熱を反射部材に良好に伝えて放熱性をより向上させることができる。   In addition, the lower surface of the light emitting element can be joined to the mounting portion of the reflecting member over the entire surface, and the heat of the light emitting element can be transmitted well to the reflecting member to further improve the heat dissipation.

本発明の発光装置は、貫通孔の内部に反射部材の上側主面と面一となるように、絶縁性の光反射粒子を含有した絶縁性ペーストが充填されていることから、発光素子や蛍光体から発せられる光が貫通孔に入ったとしても、光反射粒子により上側に有効に反射することができ、発光装置の放射強度や軸上光度や輝度,演色性等の光特性を良好なものとし得る。   The light emitting device of the present invention is filled with an insulating paste containing insulating light reflecting particles so that the inside of the through hole is flush with the upper main surface of the reflecting member. Even if light emitted from the body enters the through-hole, it can be effectively reflected upward by the light-reflecting particles, and has excellent light characteristics such as radiation intensity, axial luminous intensity, luminance, and color rendering properties of the light-emitting device It can be.

本発明の照明装置は、上記本発明の発光装置を所定の配置となるように設置したことから、半導体から成る発光素子の電子の再結合による発光を利用しているため、従来の放電を用いた照明装置よりも低消費電力かつ長寿命とすることが可能な小型の照明装置とすることができる。その結果、発光素子から発生する光の中心波長の変動を抑制することができ、長期間にわたり安定した放射光強度かつ放射光角度(配光分布)で光を照射することができるとともに、照射面における色むらや照度分布の偏りが抑制された照明装置とすることができる。   Since the light emitting device of the present invention is installed in a predetermined arrangement, the lighting device of the present invention uses light emission by recombination of electrons of a light emitting element made of a semiconductor. Thus, a small illuminating device that can have lower power consumption and longer life than the existing illuminating device can be obtained. As a result, fluctuations in the center wavelength of light generated from the light emitting element can be suppressed, light can be emitted with a stable radiant light intensity and radiant light angle (light distribution distribution) over a long period of time, and an irradiation surface It is possible to provide a lighting device in which uneven color and uneven illuminance distribution are suppressed.

また、本発明の発光装置を光源として所定の配置に設置するとともに、これらの発光装置の周囲に任意の形状に光学設計した反射治具や光学レンズ、光拡散板等を設置することにより、任意の配光分布の光を放射する照明装置とすることができる。   In addition, the light emitting device of the present invention is installed in a predetermined arrangement as a light source, and by installing a reflection jig, an optical lens, a light diffusing plate, etc. optically designed in an arbitrary shape around these light emitting devices, It can be set as the illuminating device which radiates | emits the light of this light distribution.

本発明の発光装置について以下に詳細に説明する。図1は本発明の発光装置の実施の形態の一例を示す断面図である。この図において、1は基体、2は反射部材、3は蛍光体4を含有した透光性部材、5は発光素子であり、主としてこれらで発光素子5の発光を方向性をもって外部に発光させ得る発光装置が構成される。   The light emitting device of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of a light emitting device of the present invention. In this figure, 1 is a base, 2 is a reflecting member, 3 is a translucent member containing a phosphor 4, and 5 is a light emitting element, which can mainly emit light emitted from the light emitting element 5 to the outside with directionality. A light emitting device is configured.

本発明における基体1は、アルミナセラミックスや窒化アルミニウム質焼結体,ムライト質焼結体,ガラスセラミックス等のセラミックス、エポキシ樹脂等の樹脂、またはFe−Ni−Co合金,Cu−W,Al等の金属から成る。また、基体1は上側主面に発光素子5を載置する載置部2dを有する反射部材2を載置固定する機能を有する。   The substrate 1 in the present invention is made of ceramics such as alumina ceramics, aluminum nitride sintered bodies, mullite sintered bodies, glass ceramics, resins such as epoxy resins, Fe-Ni-Co alloys, Cu-W, Al, etc. Made of metal. The substrate 1 has a function of mounting and fixing the reflecting member 2 having a mounting portion 2d for mounting the light emitting element 5 on the upper main surface.

基体1の上面には、反射部材2が半田,Agロウ等のロウ材やエポキシ樹脂等の接着剤等の接合材により取着される。反射部材2は、上側主面の中央部に発光素子5が上面に載置される凸状の載置部2bが形成され、上側主面の外周部に載置部2bを囲繞するとともにその内周面が発光素子5が発光する光を反射する反射面2cとされている側壁部2aが形成されている。これにより、発光素子5からの光を蛍光体4で波長変換して外部へ直接放射させるだけでなく、発光素子5から横方向等に発光された光や蛍光体4から下側に放出された光を反射面2cで均一にむらなく反射させることができ、軸上光度および輝度さらには演色性等を効果的に向上させることができる。   On the upper surface of the substrate 1, the reflecting member 2 is attached by a bonding material such as solder, a brazing material such as Ag brazing, or an adhesive such as an epoxy resin. The reflecting member 2 is formed with a convex mounting portion 2b on the upper surface of the upper main surface, on which the light emitting element 5 is mounted, and surrounds the mounting portion 2b on the outer periphery of the upper main surface. A side wall 2a having a peripheral surface that is a reflection surface 2c that reflects light emitted from the light emitting element 5 is formed. As a result, the light from the light emitting element 5 is not only directly converted to the wavelength by the phosphor 4 and directly emitted to the outside, but also the light emitted from the light emitting element 5 in the lateral direction or the like is emitted downward from the phosphor 4. The light can be uniformly and uniformly reflected by the reflecting surface 2c, and the on-axis luminous intensity, luminance, and color rendering can be effectively improved.

反射部材2は、アルミナセラミックスや窒化アルミニウム質焼結体,ムライト質焼結体,ガラスセラミックス等のセラミックス、エポキシ樹脂等の樹脂、またはFe−Ni−Co合金,Cu−W,Al等の金属から成り、切削加工や金型成形等を行なうことにより形成される。そして、反射面2cは、反射部材2の側壁部2aの内周面に切削加工や金型成形等を施すことにより、あるいは、側壁部2aの内周面に、例えば、メッキや蒸着等によりAl,Ag,Au,白金(Pt),チタン(Ti),クロム(Cr),Cu等の高反射率の金属薄膜を形成することにより反射面2cを形成してもよい。   The reflecting member 2 is made of alumina ceramic, aluminum nitride sintered body, mullite sintered body, ceramic such as glass ceramic, resin such as epoxy resin, or metal such as Fe-Ni-Co alloy, Cu-W, Al or the like. It is formed by performing cutting or mold forming. The reflecting surface 2c is formed by subjecting the inner peripheral surface of the side wall portion 2a of the reflecting member 2 to cutting, mold forming, or the like, or forming the inner surface of the side wall portion 2a by, for example, plating or vapor deposition. , Ag, Au, platinum (Pt), titanium (Ti), chromium (Cr), Cu, or the like may be used to form the reflective surface 2c.

なお、反射面2cがAgやCu等の酸化により変色し易い金属からなる場合には、その表面に、例えば厚さ1〜10μm程度のNiメッキ層と厚さ0.1〜3μm程度のAuメッキ層とが電解メッキ法や無電解メッキ法により順次被着されているのが良い。これにより反射面2cの耐腐食性が向上する。   When the reflecting surface 2c is made of a metal that is easily discolored by oxidation such as Ag or Cu, an Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are formed on the surface. Is preferably deposited sequentially by electrolytic plating or electroless plating. Thereby, the corrosion resistance of the reflective surface 2c improves.

また、反射面2c表面の算術平均粗さRaは、0.004〜4μmであるのが良く、これにより、反射面2cが発光素子5や蛍光体4の光を良好に反射し得る。Raが4μmを超えると、発光素子5の光を均一に反射させ得ず、発光装置の内部で乱反射する。一方、0.004μm未満では、そのような面を安定かつ効率良く形成することが困難となる傾向にある。   In addition, the arithmetic average roughness Ra of the surface of the reflecting surface 2c is preferably 0.004 to 4 μm, so that the reflecting surface 2c can reflect light from the light emitting element 5 and the phosphor 4 well. When Ra exceeds 4 μm, the light of the light emitting element 5 cannot be reflected uniformly, and is irregularly reflected inside the light emitting device. On the other hand, if it is less than 0.004 μm, it tends to be difficult to form such a surface stably and efficiently.

反射面2cは、例えば、縦断面形状が、上側に向かうにともなって外側に広がった図1,2に示すような直線状の傾斜面、上側に向かうにともなって外側に広がった曲面状の傾斜面、あるいは図5に示すような矩形状の面等の形状が挙げられる。   The reflection surface 2c is, for example, a linear inclined surface as shown in FIGS. 1 and 2 whose longitudinal cross-sectional shape spreads outward as it goes upward, and a curved slope that spreads outward as it goes upward Examples of the shape include a surface and a rectangular surface as shown in FIG.

本発明の反射面2cは、下端が発光素子5の端部に位置する発光部と載置部2bの上面2dおよび側面の間の角とを結ぶ光路線上または光路線よりも下側に位置している。これにより、発光素子5から横方向や下側方向に発光された直接光を効率よく反射面2cで反射することができ、放射光強度をきわめて高いものとすることができる。   The reflective surface 2c of the present invention is located on or below the optical path connecting the light emitting part whose lower end is located at the end of the light emitting element 5 and the corner between the upper surface 2d and the side surface of the mounting part 2b. ing. Thereby, the direct light emitted from the light emitting element 5 in the lateral direction or the lower direction can be efficiently reflected by the reflecting surface 2c, and the emitted light intensity can be made extremely high.

そして、発光素子5は、載置部2bの上面2dに載置されるとともに発光素子5の電極が載置部2bの上面2dに形成した電極パッド、あるいは基体1の上面に形成した配線導体の一部から成る電極パッドに電気的に接続される。この電極パッドは、基体1や反射部材2内部に形成された配線導体(図示せず)を介して発光装置の外面(基体1の側面や下面)に導出されて外部電気回路基板に接続されることにより、発光素子5と外部電気回路とが電気的に接続されることとなる。   The light emitting element 5 is mounted on the upper surface 2d of the mounting portion 2b, and the electrode pad of the light emitting element 5 formed on the upper surface 2d of the mounting portion 2b or the wiring conductor formed on the upper surface of the substrate 1 is used. It is electrically connected to a partly formed electrode pad. This electrode pad is led out to the outer surface of the light emitting device (the side surface and the lower surface of the substrate 1) via a wiring conductor (not shown) formed inside the substrate 1 and the reflecting member 2, and is connected to the external electric circuit board. As a result, the light emitting element 5 and the external electric circuit are electrically connected.

このような電極パッドは、例えば、W,Mo,Cu,Ag等の金属粉末のメタライズ層を基体1や反射部材2の表面や内部に形成することによって、Fe−Ni−Co合金等のリード端子を基体1や反射部材2に埋設することによって、または、配線導体が形成された絶縁部材から成る入出力端子を基体1および反射部材2に設けた貫通孔に嵌着接合させることによって設けられる。   Such an electrode pad is, for example, formed of a metallized layer of metal powder such as W, Mo, Cu, or Ag on the surface or inside of the base 1 or the reflecting member 2 to thereby form a lead terminal such as Fe-Ni-Co alloy. Is embedded in the substrate 1 or the reflecting member 2 or input / output terminals made of an insulating member on which wiring conductors are formed are fitted and joined to through holes provided in the substrate 1 and the reflecting member 2.

なお、電極パッドや配線導体の露出する表面には、Niや金(Au)等の耐食性に優れる金属を1〜20μm程度の厚さで被着させておくのが良く、電極パッドや配線導体の酸化腐食を有効に防止し得るともに、発光素子5と電極パッドとの接続を強固にし得る。したがって、電極パッドや配線導体の露出表面には、例えば、厚さ1〜10μm程度のNiメッキ層と厚さ0.1〜3μm程度のAuメッキ層とが電解メッキ法や無電解メッキ法により順次被着されているのがより好ましい。   It should be noted that a metal having excellent corrosion resistance such as Ni or gold (Au) is preferably deposited on the exposed surface of the electrode pad or wiring conductor in a thickness of about 1 to 20 μm. Oxidative corrosion can be effectively prevented, and the connection between the light emitting element 5 and the electrode pad can be strengthened. Therefore, for example, an Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited on the exposed surfaces of the electrode pads and wiring conductors by an electrolytic plating method or an electroless plating method. More preferably.

また、載置部2bは、その側面が図1に示すように基体1に向かって垂直に形成される場合や、図2に示すように基体1に向かって末広がりに形成される場合がある。末広がりに形成される場合には、発光素子5が発する熱を載置部2bから下方向へ効率的に伝えることが可能となり、発光素子5の放熱性を向上させて発光素子5の作動性を良好に維持できる。   In addition, the mounting portion 2b may be formed such that its side surface is perpendicular to the base body 1 as shown in FIG. 1 or is widened toward the base body 1 as shown in FIG. In the case where the light emitting element 5 is formed so as to spread outwardly, the heat generated by the light emitting element 5 can be efficiently transmitted downward from the mounting portion 2b, and the heat dissipation of the light emitting element 5 is improved to improve the operability of the light emitting element 5. It can be maintained well.

反射部材2が絶縁部材の場合、図1に示すように、発光素子5および載置部2bの上面2dに形成された電極パッドは、金属バンプ(電気接続手段6)接合のようなフリップチップボンディング方式を採用することにより電気的に接続される。また、図1には示していないが、反射部材2上面に電極パッドを形成しておけば、金線(電気接続手段6’)のようなワイヤボンディング方式を採用することも可能である。好ましくは、フリップチップボンディング方式がよく、電極パッドを発光素子5の直下に設けることができるため、発光素子5の周辺の基体1の上面に電気接続用パターンを設けるためのスペースを設ける必要がなくなる。よって、発光素子5から発光された光がこの基体1の電気接続用パターン用のスペースで吸収されて軸上光度が低下するのを有効に抑制することができる。   When the reflecting member 2 is an insulating member, as shown in FIG. 1, the electrode pad formed on the light emitting element 5 and the upper surface 2d of the mounting portion 2b is flip chip bonding such as metal bump (electrical connection means 6) bonding. It is electrically connected by adopting the method. Although not shown in FIG. 1, if an electrode pad is formed on the upper surface of the reflection member 2, a wire bonding method such as a gold wire (electrical connection means 6 ') can be adopted. Preferably, the flip chip bonding method is good, and the electrode pad can be provided directly under the light emitting element 5, so that it is not necessary to provide a space for providing an electrical connection pattern on the upper surface of the substrate 1 around the light emitting element 5. . Therefore, it is possible to effectively suppress the light emitted from the light emitting element 5 from being absorbed in the space for the electrical connection pattern of the substrate 1 and the on-axis luminous intensity being lowered.

また、基体1が絶縁部材の場合、図2に示すように絶縁部材または金属部材から成る反射部材2の載置部2bの周囲に上下主面間を貫通するとともに光路線よりも下側に位置する貫通孔7が形成されており、発光素子5の電極と基体1の上面の配線導体とが貫通孔7を通してワイヤ(電気接続手段6’)により電気的に接続されているのがよい。これにより、発光素子5から発光された直接光が反射部材2に設けたワイヤ6’を通すための貫通孔7よりも上側で反射面2cにより反射されることとなり、直接光が貫通孔7内に入り込んで吸収されるのを有効に防止して放射光強度を高めることができる。また、発光素子5の下面を反射部材2の載置部2bに全面で接合させることができ、発光素子5の熱を反射部材2に良好に伝えて放熱性をより向上させることができる。   When the substrate 1 is an insulating member, as shown in FIG. 2, it penetrates between the upper and lower main surfaces around the mounting portion 2b of the reflecting member 2 made of an insulating member or a metal member and is positioned below the optical path. A through hole 7 is formed, and the electrode of the light emitting element 5 and the wiring conductor on the upper surface of the substrate 1 are preferably electrically connected through the through hole 7 by a wire (electrical connection means 6 ′). As a result, the direct light emitted from the light emitting element 5 is reflected by the reflecting surface 2 c above the through hole 7 for passing the wire 6 ′ provided in the reflecting member 2, and the direct light is reflected in the through hole 7. It is possible to increase the intensity of the emitted light by effectively preventing the light from entering and being absorbed. Moreover, the lower surface of the light emitting element 5 can be joined to the mounting portion 2b of the reflecting member 2 over the entire surface, and the heat of the light emitting element 5 can be transmitted well to the reflecting member 2 to further improve the heat dissipation.

なお、貫通孔7の深さ(反射部材2底部の厚さ)や貫通孔7の開口径は、基体1との熱膨張差や発光素子5が発する熱伝導性等を考慮し適宜選定される。また、反射部材2底部の厚さは図1に示すような場合にも適宜選定されることになる。   The depth of the through hole 7 (thickness of the bottom of the reflecting member 2) and the opening diameter of the through hole 7 are appropriately selected in consideration of the difference in thermal expansion from the base 1, the thermal conductivity emitted by the light emitting element 5, and the like. . Further, the thickness of the bottom of the reflecting member 2 is appropriately selected also in the case shown in FIG.

貫通孔7は、図9に示すように、その内部に反射部材2の上側主面と面一となるように、絶縁性の光反射粒子を含有した絶縁性ペースト7aが充填されていることが好ましい。これにより、発光素子5や蛍光体4から発せられる光が貫通孔7に入ったとしても、光反射粒子により上側に有効に反射することができ、発光装置の放射強度や軸上光度や輝度,演色性等の光特性を良好なものとし得る。   As shown in FIG. 9, the through-hole 7 is filled with an insulating paste 7 a containing insulating light reflecting particles so as to be flush with the upper main surface of the reflecting member 2. preferable. Thereby, even if the light emitted from the light emitting element 5 or the phosphor 4 enters the through-hole 7, it can be effectively reflected upward by the light reflecting particles, and the radiant intensity, axial luminous intensity, luminance, Light characteristics such as color rendering can be improved.

絶縁性ペースト7aに含有される光反射粒子は、硫酸バリウム,炭酸カルシウム,アルミナ,シリカ等の組成に、Ca,Ti,Ba,Al,Si,Mg,K,Oが含まれたものであり、表面の全反射率が80%以上であることが好ましい。これにより、発光装置の放射強度や軸上光度や輝度,演色性等の光特性を良好なものとし得る。   The light reflecting particles contained in the insulating paste 7a are those in which Ca, Ti, Ba, Al, Si, Mg, K, O are contained in the composition of barium sulfate, calcium carbonate, alumina, silica, etc. The total reflectance of the surface is preferably 80% or more. Thereby, the light characteristics such as the radiant intensity, the axial luminous intensity, the luminance, and the color rendering properties of the light emitting device can be improved.

透光性部材3は、エポキシ樹脂やシリコーン樹脂等の透明樹脂やガラス等から成り、発光素子5からの光を波長変換することのできる蛍光体4を含有している。透光性部材3は、ディスペンサー等の注入機で発光素子5を覆うように反射部材2の内部に充填され、オーブン等で熱硬化されることで、発光素子5からの光を蛍光体4により波長変換し所望の波長スペクトルを有する光を取り出すことができるようになる。   The translucent member 3 is made of a transparent resin such as epoxy resin or silicone resin, glass, or the like, and contains a phosphor 4 that can convert the wavelength of light from the light emitting element 5. The translucent member 3 is filled in the reflection member 2 so as to cover the light emitting element 5 with an injection machine such as a dispenser, and is thermally cured in an oven or the like, so that light from the light emitting element 5 is transmitted by the phosphor 4. It becomes possible to extract light having a desired wavelength spectrum after wavelength conversion.

また、透光性部材3は、その上面と発光素子5の発光部との間隔Xが0.1〜0.5mmとなるように設けられている。これにより、発光素子5から発せられた光を、発光素子5の発光部の上側の一定の厚さの透光性部材3に含まれる蛍光体4によって高効率に波長変換し、それらの波長変換した光を蛍光体4に妨害されることなく直接透光性部材3の外部に放出することができる。その結果、発光装置の放射強度を高めて、軸上光度や輝度,演色性等の光特性を良好なものとし得る。   Moreover, the translucent member 3 is provided so that the space | interval X of the upper surface and the light emission part of the light emitting element 5 may be 0.1-0.5 mm. Thereby, the wavelength of the light emitted from the light emitting element 5 is highly efficiently converted by the phosphor 4 included in the translucent member 3 having a certain thickness above the light emitting portion of the light emitting element 5, and the wavelength conversion thereof is performed. The emitted light can be directly emitted outside the translucent member 3 without being obstructed by the phosphor 4. As a result, the light intensity of the light emitting device can be increased, and the light characteristics such as the on-axis luminous intensity, luminance, and color rendering can be improved.

発光素子5の発光部と透光性部材3の表面との間隔Xが図3に示すように0.5mmより長い場合、蛍光体4のうち発光素子5に近接しているもの(斜線で示している蛍光体4)は、発光素子5の光を直接励起して波長変換することできるが、この波長変換した光を透光性部材3の外部へ直接放出するのが困難である。即ち、透光性部材3の表面付近の蛍光体4(図3の斜線部以外の蛍光体4)により、光の進行を妨害されることにより、外部への軸上光度を良好なものとし難い。   When the distance X between the light emitting portion of the light emitting element 5 and the surface of the translucent member 3 is longer than 0.5 mm as shown in FIG. 3, the phosphor 4 that is close to the light emitting element 5 (shown by hatching) The phosphor 4) can directly excite the light of the light emitting element 5 to convert the wavelength, but it is difficult to directly emit the wavelength converted light to the outside of the translucent member 3. That is, it is difficult to improve the on-axis luminous intensity by obstructing the progress of light by the phosphors 4 near the surface of the translucent member 3 (the phosphors 4 other than the shaded portion in FIG. 3). .

一方、図4に示すように発光素子5の発光部と透光性部材3の表面との間隔Xが0.1mmより短い場合、発光素子5の光を効率よく波長変換するのが困難となり、波長変換されずに透光性部材3を透過する視感性の低い波長の光が多くなり、軸上光度や輝度,演色性等の光特性を良好なものとし難い。   On the other hand, when the distance X between the light emitting portion of the light emitting element 5 and the surface of the translucent member 3 is shorter than 0.1 mm as shown in FIG. 4, it becomes difficult to efficiently convert the wavelength of the light from the light emitting element 5. The light having a wavelength with low visibility that passes through the translucent member 3 without being converted increases, and it is difficult to improve optical characteristics such as on-axis luminous intensity, luminance, and color rendering.

また、透光性部材3の上面は図1に示すように上に凸の形状になっているのがよい。これにより、発光素子5から斜め上方に放出された光に対しても発光部と透光性部材3の表面との間隔を0.1〜0.5mmにすることができ、より放射強度を高めることができる。   Moreover, the upper surface of the translucent member 3 is preferably convex upward as shown in FIG. Thereby, also with respect to the light emitted obliquely upward from the light emitting element 5, the distance between the light emitting portion and the surface of the translucent member 3 can be set to 0.1 to 0.5 mm, and the radiation intensity can be further increased. .

また、本発明の発光装置は、1個のものを所定の配置となるように設置したことにより、または複数個を、例えば、格子状や千鳥状,放射状,複数の発光装置から成る、円状や多角形状の発光装置群を同心状に複数群形成したもの等の所定の配置となるように設置したことにより、照明装置とすることができる。これにより、半導体から成る発光素子5の電子の再結合による発光を利用しているため、従来の放電を用いた照明装置よりも低消費電力かつ長寿命とすることが可能であり、発熱の小さな小型の照明装置とすることができる。その結果、発光素子5から発生する光の中心波長の変動を抑制することができ、長期間にわたり安定した放射光強度かつ放射光角度(配光分布)で光を照射することができるとともに、照射面における色むらや照度分布の偏りが抑制された照明装置とすることができる。   In addition, the light emitting device of the present invention is a circular shape in which one device is installed in a predetermined arrangement, or a plurality of light emitting devices, for example, a lattice shape, a staggered shape, a radial shape, or a plurality of light emitting devices. In addition, a lighting device can be obtained by installing the light emitting device groups in a plurality of concentric shapes so as to have a predetermined arrangement. Thereby, since light emission by recombination of electrons of the light emitting element 5 made of a semiconductor is used, it is possible to achieve lower power consumption and longer life than a lighting device using a conventional discharge, and generate less heat. It can be set as a small illuminating device. As a result, fluctuations in the center wavelength of the light generated from the light emitting element 5 can be suppressed, and light can be irradiated with a stable radiant light intensity and radiant light angle (light distribution) over a long period of time. It can be set as the illuminating device by which the color nonuniformity in the surface and the bias of illuminance distribution were suppressed.

また、本発明の発光装置を光源として所定の配置に設置するとともに、これらの発光装置の周囲に任意の形状に光学設計した反射治具や光学レンズ、光拡散板等を設置することにより、任意の配光分布の光を放射できる照明装置とすることができる。   In addition, the light emitting device of the present invention is installed in a predetermined arrangement as a light source, and by installing a reflection jig, an optical lens, a light diffusing plate, etc. optically designed in an arbitrary shape around these light emitting devices, It can be set as the illuminating device which can radiate | emit the light of this light distribution.

例えば、図10,図11に示す平面図,断面図のように複数個の発光装置8が発光装置駆動回路基板10に複数列に配置され、発光装置8の周囲に任意の形状に光学設計した反射治具9が設置されて成る照明装置の場合、隣接する一列上に配置された複数個の発光装置8において、隣り合う発光装置8との間隔が最短に成らないような配置、いわゆる千鳥状とすることが好ましい。即ち、発光装置8が格子状に配置される際には、光源となる発光装置8が直線上に配列されることによりグレアが強くなり、このような照明装置が人の視覚に入ってくることにより、不快感や目の障害を起こしやすくなるのに対し、千鳥状とすることにより、グレアが抑制され人間の目に対する不快感や目に及ぼす障害を低減することができる。さらに、隣り合う発光装置8間の距離が長くなることにより、隣接する発光装置8間の熱的な干渉が有効に抑制され、発光装置8が実装された発光装置駆動回路基板10内における熱のこもりが抑制され、発光装置8の外部に効率よく熱が放散される。その結果、人の目に対しても障害の小さい長期間にわたり光学特性の安定した長寿命の照明装置を作製することができる。   For example, a plurality of light emitting devices 8 are arranged in a plurality of rows on the light emitting device driving circuit board 10 as shown in the plan view and the sectional view shown in FIGS. In the case of an illuminating device in which the reflecting jig 9 is installed, in a plurality of light emitting devices 8 arranged on adjacent rows, an arrangement in which the interval between the adjacent light emitting devices 8 is not shortest, a so-called staggered pattern. It is preferable that That is, when the light-emitting devices 8 are arranged in a grid pattern, the glare is strengthened by arranging the light-emitting devices 8 serving as light sources on a straight line, and such a lighting device enters human vision. Thus, discomfort and eye damage are likely to occur, but by forming a staggered pattern, glare is suppressed and discomfort and damage to the eyes of the human eye can be reduced. Furthermore, since the distance between the adjacent light emitting devices 8 is increased, thermal interference between the adjacent light emitting devices 8 is effectively suppressed, and heat in the light emitting device driving circuit board 10 on which the light emitting devices 8 are mounted is reduced. Clouding is suppressed, and heat is efficiently dissipated outside the light emitting device 8. As a result, it is possible to manufacture a long-life lighting device with stable optical characteristics over a long period of time with little obstacles to human eyes.

また、照明装置が、図12,図13に示す平面図,断面図のような発光装置駆動回路基板10上に複数の発光装置8から成る円状や多角形状の発光装置8群を、同心状に複数群形成した照明装置の場合、1つの円状や多角形状の発光装置8群における発光装置8の配置数を照明装置の中央側より外周側ほど多くすることが好ましい。これにより、発光装置8同士の間隔を適度に保ちながら発光装置8をより多く配置することができ、照明装置の照度をより向上させることができる。また、照明装置の中央部の発光装置8の密度を低くして発光装置駆動回路基板10の中央部における熱のこもりを抑制することができる。よって、発光装置駆動回路基板10内における温度分布が一様となり、照明装置を設置した外部電気回路基板やヒートシンクに効率よく熱が伝達され、発光装置8の温度上昇を抑制することができる。その結果、発光装置8は長期間にわたり安定して動作することができるとともに長寿命の照明装置を作製することができる。   In addition, the lighting device is a concentric arrangement of a circular or polygonal light emitting device group of a plurality of light emitting devices 8 on the light emitting device driving circuit board 10 as shown in the plan view and the sectional view shown in FIGS. In the case of the illuminating device formed in a plurality of groups, it is preferable to increase the number of the light emitting devices 8 arranged in one circular or polygonal light emitting device group 8 toward the outer peripheral side from the center side of the illuminating device. Thereby, more light-emitting devices 8 can be arrange | positioned maintaining the space | interval of light-emitting devices 8 moderately, and the illumination intensity of an illuminating device can be improved more. In addition, the density of the light emitting device 8 in the central portion of the lighting device can be lowered to suppress heat accumulation in the central portion of the light emitting device driving circuit board 10. Therefore, the temperature distribution in the light emitting device driving circuit board 10 becomes uniform, heat is efficiently transmitted to the external electric circuit board and the heat sink on which the lighting device is installed, and the temperature rise of the light emitting device 8 can be suppressed. As a result, the light emitting device 8 can operate stably over a long period of time, and a long-life lighting device can be manufactured.

このような照明装置としては、例えば、室内や室外で用いられる、一般照明用器具、シャンデリア用照明器具、住宅用照明器具、オフィス用照明器具、店装,展示用照明器具、街路用照明器具、誘導灯器具及び信号装置、舞台及びスタジオ用の照明器具、広告灯、照明用ポール、水中照明用ライト、ストロボ用ライト、スポットライト、電柱等に埋め込む防犯用照明、非常用照明器具、懐中電灯、電光掲示板等や、調光器、自動点滅器、ディスプレイ等のバックライト、動画装置、装飾品、照光式スイッチ、光センサ、医療用ライト、車載ライト等が挙げられる。   Examples of such lighting devices include general lighting fixtures, chandelier lighting fixtures, residential lighting fixtures, office lighting fixtures, store lighting, display lighting fixtures, street lighting fixtures, used indoors and outdoors. Guide light fixtures and signaling devices, stage and studio lighting fixtures, advertising lights, lighting poles, underwater lighting lights, strobe lights, spotlights, security lights embedded in power poles, emergency lighting fixtures, flashlights, Examples include electronic bulletin boards and the like, backlights for dimmers, automatic flashers, displays and the like, moving image devices, ornaments, illuminated switches, optical sensors, medical lights, in-vehicle lights, and the like.

本発明の発光装置について図5,図6,図7にもとづき以下に実施例を示す。   Examples of the light-emitting device of the present invention will be described below with reference to FIGS.

まず、基体1として、外形が2.5×0.8mmで厚さ0.4mmの四角状の板からなるアルミナセラミックス基板を準備した。また、反射部材2として、外形が2.5×0.8mmの四角形状で、上側主面の中央部に直径がL(mm)の円柱状の載置部2bを有し、載置部2b周囲に位置する部位の厚さ(上側主面と下側主面との間の距離)が0.2mm、外周部に下側主面からの高さが1.0mm(上側主面からの突出高さが0.8mm)で横方向の厚みが0.2mmの枠状の側壁部2aを有するAlからなる部材を準備した。なお、側壁部2aの基体1に垂直な内周面は、算術平均粗さRaが0.1μmの反射面2cとされた。   First, an alumina ceramic substrate made of a square plate having an outer shape of 2.5 × 0.8 mm and a thickness of 0.4 mm was prepared as the substrate 1. Further, as the reflecting member 2, the outer shape is a quadrangular shape with a size of 2.5 × 0.8 mm, and a cylindrical mounting portion 2b having a diameter of L (mm) is provided at the center of the upper main surface, and is positioned around the mounting portion 2b. The thickness (distance between the upper main surface and the lower main surface) is 0.2 mm, the height from the lower main surface to the outer periphery is 1.0 mm (the protruding height from the upper main surface is 0.8 mm) The member which consists of Al which has the frame-shaped side wall part 2a whose lateral thickness is 0.2 mm was prepared. The inner peripheral surface of the side wall 2a perpendicular to the base body 1 was a reflecting surface 2c having an arithmetic average roughness Ra of 0.1 μm.

また、上面視で四角形状の反射部材2の長辺方向において、載置部2bの両側の載置部2bと側壁部2aとの間の部位にそれぞれ1個ずつ、上側主面から下側主面にかけて反射部材2を貫通する貫通孔7を形成した。   In addition, in the long side direction of the quadrangular reflecting member 2 in a top view, one piece is placed from the upper main surface to the lower main surface, one at each site between the mounting portion 2b and the side wall portion 2a on both sides of the mounting portion 2b. A through hole 7 penetrating the reflecting member 2 was formed over the surface.

次に、基体1の上面の貫通孔7底部に対応した部位に、配線導体の一部からなる電極を、Mo−Mn粉末からなるメタライズ層により直径が0.1mmの円形状に形成した。そして、その表面に厚さ3μmのNiメッキ層と厚さ2μmのAuメッキ層とを順次被着した。また、基体1内部の配線導体は、貫通導体からなる電気接続部、いわゆるスルーホールによって形成された。このスルーホールについても電気接続用パターンと同様にMo−Mn粉末からなるメタライズ導体で成形された。   Next, an electrode made of a part of the wiring conductor was formed in a circular shape having a diameter of 0.1 mm by a metallized layer made of Mo-Mn powder at a portion corresponding to the bottom of the through hole 7 on the upper surface of the substrate 1. Then, a Ni plating layer having a thickness of 3 μm and an Au plating layer having a thickness of 2 μm were sequentially deposited on the surface. Moreover, the wiring conductor inside the base body 1 was formed by an electrical connection portion made of a through conductor, a so-called through hole. This through hole was also formed with a metallized conductor made of Mo-Mn powder in the same manner as the electrical connection pattern.

さらに、基体1の上面の外周部に全周にわたって、基体1と反射部材2とをAu−錫(Sn)ロウにより接合するための接合部を形成した。この接合部は、Mo−Mn粉末からなるメタライズ層の表面に厚さ3μmのNiメッキ層と厚さ2μmのAuメッキ層とが被着されたものであった。   Furthermore, a joining portion for joining the base body 1 and the reflecting member 2 with Au-tin (Sn) brazing was formed on the outer peripheral portion of the upper surface of the base body 1 over the entire circumference. This joint was obtained by depositing a Ni plating layer having a thickness of 3 μm and an Au plating layer having a thickness of 2 μm on the surface of a metallized layer made of Mo—Mn powder.

次に、載置部2bの上面2dに、近紫外光を発する厚さ0.08mmの発光素子5をAu−Snロウで接合するとともに、反射部材2を基体1の上面の接合部にAu−Snロウで接合し、さらに、発光素子5と貫通孔7底部に位置する電極とを金線にてワイヤボンディングし電気的に接続した。   Next, a 0.08 mm thick light emitting element 5 emitting near-ultraviolet light is bonded to the upper surface 2d of the mounting portion 2b with Au—Sn brazing, and the reflecting member 2 is bonded to the bonding portion on the upper surface of the substrate 1 with Au—Sn. The light emitting element 5 and the electrode located at the bottom of the through hole 7 were wire bonded with a gold wire and electrically connected.

そして、赤色発光,緑色発光,青色発光を行なう3種類の蛍光体4を含有するシリコーン樹脂(透光性部材3)をディスペンサーにて基体1と反射部材2に囲まれた領域の反射部材2の内周面の最上端まで充填することにより、サンプルとしての発光装置を作製した。   Then, a silicone resin (translucent member 3) containing three types of phosphors 4 that emit red light, green light, and blue light is applied to the reflecting member 2 in a region surrounded by the base 1 and the reflecting member 2 with a dispenser. A light emitting device as a sample was manufactured by filling up to the uppermost end of the inner peripheral surface.

なお、発光素子5の発光部の基体1からの高さH(mm)は、載置部2bの高さを変えることにより種々の値とすることができ、透光性部材3の上面と発光部との間の距離X(mm)は、X=1.0−Hで表される。また、図6に示すように、載置部2bの直径Lを変えることにより、発光部と載置部2bの上面2dおよび側面の間の角とを結ぶ光路線の角度を変えることができる。   Note that the height H (mm) of the light emitting portion of the light emitting element 5 from the base body 1 can be set to various values by changing the height of the mounting portion 2b. The distance X (mm) between the parts is expressed by X = 1.0−H. Further, as shown in FIG. 6, by changing the diameter L of the mounting portion 2b, the angle of the optical path connecting the light emitting portion and the angle between the upper surface 2d and the side surface of the mounting portion 2b can be changed.

LおよびXの値に対するそれぞれのサンプルの軸上光度を測定した結果を図7に示す。図7のグラフより、軸上光量はLとXとの関係により光量の高低が現れることが分かった。すなわち、Lが0.3mm未満である場合、光路線が発光部と反射面2cの下端とを結ぶ線よりも下側にあり、発光素子5からの直接光が反射面2cに達せず貫通孔7内部に侵入することにより反射効率が低くなったものと考えられる。   FIG. 7 shows the results of measuring the on-axis luminous intensity of each sample with respect to the values of L and X. From the graph of FIG. 7, it was found that the amount of light on the axis appears high or low depending on the relationship between L and X. That is, when L is less than 0.3 mm, the optical path is below the line connecting the light emitting portion and the lower end of the reflecting surface 2c, and the direct light from the light emitting element 5 does not reach the reflecting surface 2c, and the through hole 7 It is thought that the reflection efficiency was lowered by entering the inside.

また、Lが0.3mm以上の光路線が発光部と反射面2cの下端とを結ぶ線よりも上側にある場合、すなわち貫通孔7に直接光が入射されない場合、軸上光度はXが0.1mm乃至0.5mmのときに500mcd以上と著しく高くなることが分かった。これは、発光部と透光性部材3の上面との間隔Xが適度な大きさとなることにより、発光素子5から発光された光が、蛍光体4により高い効率で波長変換され、余分な蛍光体4によって妨害されることなく、高い効率で透光性部材3の外部に放出されたためと考えられる。   Further, when the optical path line with L of 0.3 mm or more is above the line connecting the light emitting portion and the lower end of the reflecting surface 2c, that is, when light is not directly incident on the through hole 7, the axial luminous intensity X is 0.1mm. It was found that when the thickness was 0.5 mm, it was remarkably high at 500 mcd or more. This is because the light X emitted from the light-emitting element 5 is wavelength-converted with high efficiency by the phosphor 4 because the distance X between the light-emitting portion and the upper surface of the translucent member 3 becomes an appropriate size. It is considered that the light was released to the outside of the translucent member 3 with high efficiency without being obstructed by the body 4.

以上の結果から、反射面2cの下端が発光部と載置部2bの上面2dおよび側面の間の角とを結ぶ光路線上または光路線よりも下側に位置しているとともに、透光性部材3の上面と発光部との間の距離が0.1乃至0.5mmである場合に、きわめて優れた軸上光度を示すことが分かった。なお、この軸上光度の著しく向上したサンプルは、輝度や演色性等についても十分であることを確認した。   From the above results, the lower end of the reflection surface 2c is located on or below the optical path connecting the light emitting section and the corner between the upper surface 2d and the side surface of the mounting section 2b, and the translucent member. It was found that when the distance between the upper surface of 3 and the light emitting portion was 0.1 to 0.5 mm, extremely excellent on-axis luminous intensity was exhibited. In addition, it was confirmed that this sample having a significantly improved on-axis luminous intensity is sufficient in terms of luminance, color rendering and the like.

なお、本発明は以上の実施の形態の例および実施例に限定されず、本発明の要旨を逸脱しない範囲内であれば種々の変更を行なうことは何等支障ない。   It should be noted that the present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the scope of the present invention.

例えば、放射強度の向上のために基体1に発光素子5を複数設けてしても良い。また反射面2cの角度や、反射面2c上端から透光性部材3の上面までの距離を任意に調整することも可能であり、これにより、補色域を設けることによりさらに良好な演色性を得ることができる。   For example, a plurality of light emitting elements 5 may be provided on the substrate 1 in order to improve the radiation intensity. It is also possible to arbitrarily adjust the angle of the reflecting surface 2c and the distance from the upper end of the reflecting surface 2c to the upper surface of the translucent member 3, thereby obtaining better color rendering by providing a complementary color gamut. be able to.

また、本発明の照明装置は、複数個の発光装置8を所定の配置となるように設置したものだけでなく、1個の発光装置8を所定の配置となるように設置したものでもよい。   Further, the lighting device of the present invention is not limited to one in which a plurality of light emitting devices 8 are installed in a predetermined arrangement, but may be one in which one light emitting device 8 is installed in a predetermined arrangement.

本発明の発光装置について実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment about the light-emitting device of this invention. 本発明の発光装置について実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment about the light-emitting device of this invention. 本発明の発光装置における透光性部材の上面と発光部との間隔についての説明をするための断面図である。It is sectional drawing for demonstrating the space | interval of the upper surface of the translucent member in the light-emitting device of this invention, and a light emission part. 本発明の発光装置における透光性部材の上面と発光部との間隔についての説明をするための断面図である。It is sectional drawing for demonstrating the space | interval of the upper surface of the translucent member in the light-emitting device of this invention, and a light emission part. 実施例に用いた本発明の発光装置を示す断面図である。It is sectional drawing which shows the light-emitting device of this invention used for the Example. 図5の発光装置における光路線の各種パターンを示す断面図である。It is sectional drawing which shows the various patterns of the optical path in the light-emitting device of FIG. 本発明の発光装置における載置部の長さLと、透光性部材上面および発光部の間隔Xと、軸上光度との関係を示すグラフである。It is a graph which shows the relationship between the length L of the mounting part in the light-emitting device of this invention, the space | interval X of a translucent member upper surface and a light emission part, and an axial luminous intensity. 従来の発光装置を示す断面図である。It is sectional drawing which shows the conventional light-emitting device. 本発明の発光装置について実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment about the light-emitting device of this invention. 本発明の照明装置について実施の形態の一例を示す平面図である。It is a top view which shows an example of embodiment about the illuminating device of this invention. 図10の照明装置の断面図である。FIG. 11 is a cross-sectional view of the lighting device of FIG. 本発明の照明装置について実施の形態の他の例を示す平面図である。It is a top view which shows the other example of embodiment about the illuminating device of this invention. 図12の照明装置の断面図である。FIG. 13 is a cross-sectional view of the illumination device of FIG.

符号の説明Explanation of symbols

1:基体
2:反射部材
2a:側壁部
2b:載置部
2c:反射面
2d:載置部の上面
3:透光性部材
4:蛍光体
5:発光素子
6:電気接続手段
7:貫通孔
7a:絶縁性ペースト
8:発光装置
9:反射治具
10:発光装置駆動回路基板
1: Base 2: Reflective member 2a: Side wall 2b: Placement portion 2c: Reflective surface 2d: Upper surface of placement portion 3: Translucent member 4: Phosphor 5: Light emitting element 6: Electrical connection means 7: Through hole 7a: Insulating paste 8: Light emitting device 9: Reflecting jig
10: Light-emitting device drive circuit board

Claims (4)

平板状の基体と、該基体の上面に接合され、上側主面の中央部に発光素子が上面に載置される凸状の載置部が形成され、上側主面の外周部に前記載置部を囲繞するとともにその内周面が前記発光素子が発光する光を反射する反射面とされた側壁部が形成された反射部材と、前記載置部に載置される発光素子と、前記側壁部の内側に前記発光素子を覆うように設けられ、前記発光素子が発光する光を波長変換する蛍光体を含有する透光性部材とを具備しており、前記反射面は、下端が前記発光素子の端部に位置する発光部と前記載置部の上面および側面の間の角とを結ぶ光路線上または該光路線よりも下側に位置しており、前記透光性部材は、その上面と前記発光部との間の距離が0.1乃至0.5mmであることを特徴とする発光装置。 A flat base, and a convex mounting portion that is bonded to the upper surface of the base and on which the light emitting element is mounted on the upper surface are formed at the center of the upper main surface, A reflecting member formed with a side wall portion that surrounds the portion and whose inner peripheral surface is a reflecting surface that reflects light emitted from the light emitting element, the light emitting element placed on the mounting portion, and the side wall And a translucent member containing a phosphor that converts the wavelength of light emitted from the light emitting element, and the lower end of the reflective surface is the light emitting element. It is located on or below the optical path connecting the light emitting part located at the end of the element and the corner between the upper surface and the side surface of the mounting part, and the translucent member has its upper surface A light emitting device, wherein a distance between the light emitting unit and the light emitting unit is 0.1 to 0.5 mm. 前記基体は、絶縁体であるとともにその上面から外面にかけて配線導体が形成されており、前記反射部材は前記載置部の周囲に上下主面間を貫通するとともに前記光路線よりも下側に位置する貫通孔が形成されており、前記発光素子の電極と前記基体の上面の前記配線導体とが前記貫通孔を通してワイヤにより電気的に接続されていることを特徴とする請求項1記載の発光装置。 The base body is an insulator, and a wiring conductor is formed from the upper surface to the outer surface, and the reflecting member penetrates between the upper and lower main surfaces around the mounting portion and is positioned below the optical path line. The light emitting device according to claim 1, wherein a through hole is formed, and the electrode of the light emitting element and the wiring conductor on the upper surface of the base are electrically connected through the through hole by a wire. . 前記貫通孔は、その内部に前記反射部材の上側主面と面一となるように、絶縁性の光反射粒子を含有した絶縁性ペーストが充填されていることを特徴とする請求項1または請求項2記載の発光装置。 2. The through-hole is filled with an insulating paste containing insulating light-reflecting particles so as to be flush with the upper main surface of the reflecting member. Item 3. A light emitting device according to Item 2. 請求項1乃至請求項3のいずれかに記載の発光装置を所定の配置となるように設置したことを特徴とする照明装置。 An illuminating device, wherein the light emitting device according to any one of claims 1 to 3 is installed in a predetermined arrangement.
JP2004071430A 2003-09-11 2004-03-12 Light emitting device and lighting device Expired - Fee Related JP3921474B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004071430A JP3921474B2 (en) 2003-10-30 2004-03-12 Light emitting device and lighting device
TW093133106A TWI245436B (en) 2003-10-30 2004-10-29 Package for housing light-emitting element, light-emitting apparatus and illumination apparatus
US10/978,302 US20050133808A1 (en) 2003-09-11 2004-10-29 Package for housing light-emitting element, light-emitting apparatus and illumination apparatus
KR1020040087566A KR20050041986A (en) 2003-10-30 2004-10-30 Package for housing light-emitting element, light-emitting apparatus and illumination apparatus
CNB2004100900711A CN100392877C (en) 2003-10-30 2004-11-01 Light-emitting element reception package, light-emitting device and lighting device
DE102004052902A DE102004052902B4 (en) 2003-10-30 2004-11-02 A structure for housing a light-emitting element, light-emitting device and lighting device
KR1020060069330A KR20060107428A (en) 2003-10-30 2006-07-24 Light-emitting apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003369952 2003-10-30
JP2004071430A JP3921474B2 (en) 2003-10-30 2004-03-12 Light emitting device and lighting device

Publications (2)

Publication Number Publication Date
JP2005159263A true JP2005159263A (en) 2005-06-16
JP3921474B2 JP3921474B2 (en) 2007-05-30

Family

ID=34741168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004071430A Expired - Fee Related JP3921474B2 (en) 2003-09-11 2004-03-12 Light emitting device and lighting device

Country Status (1)

Country Link
JP (1) JP3921474B2 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340472A (en) * 2004-05-26 2005-12-08 Kyocera Corp Light-emitting device and illuminator
WO2007077960A1 (en) * 2006-01-04 2007-07-12 Showa Denko K.K. Semiconductor light-emitting device
JP2007184319A (en) * 2006-01-04 2007-07-19 Showa Denko Kk Semiconductor light emitting device
JP2008047539A (en) * 2006-08-09 2008-02-28 Philips Lumileds Lightng Co Llc Lighting system with wavelength converting element side holding heat sink
JP2008085282A (en) * 2006-01-27 2008-04-10 Kyocera Corp Wiring board for light emitting element and light emitting device
KR100822317B1 (en) * 2006-04-21 2008-04-18 주식회사 엘티아이 Back light unit for portable terminal unit
JP2008544568A (en) * 2005-07-04 2008-12-04 ソウル セミコンダクター カンパニー リミテッド Light emitting diode and manufacturing method thereof
JP2010114218A (en) * 2008-11-05 2010-05-20 Toshiba Corp Light-emitting device
WO2010098273A1 (en) * 2009-02-27 2010-09-02 ソニーケミカル&インフォメーションデバイス株式会社 Anisotropic conductive film and light-emitting device
WO2010098349A1 (en) * 2009-02-25 2010-09-02 ローム株式会社 Led lamp
JP2011044356A (en) * 2009-08-21 2011-03-03 Daishi Densetsu Kk Led electric bulb
JP2011198560A (en) * 2010-03-18 2011-10-06 Stanley Electric Co Ltd Vehicular lighting fixture
JP2013030812A (en) * 2012-11-06 2013-02-07 Mitsubishi Chemicals Corp Substrate for led chip fixation and method of manufacturing the same
KR101326892B1 (en) 2011-12-15 2013-11-11 엘지이노텍 주식회사 Optical member, light emitting device and display device having the same and method of fabricating the same
CN103511935A (en) * 2012-06-08 2014-01-15 日立空调·家用电器株式会社 Lighting device
KR101415930B1 (en) 2012-09-17 2014-07-04 주식회사 루멘스 light emitting device package and back light unit including the same
KR101742615B1 (en) * 2010-09-20 2017-06-01 엘지이노텍 주식회사 A light emitting device package and a light emitting module
KR101766052B1 (en) 2015-10-28 2017-08-08 한국광기술원 Lighting device for outdoor

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821775A (en) * 1971-09-23 1974-06-28 Spectronics Inc Edge emission gaas light emitter structure
JPH01160864U (en) * 1988-04-11 1989-11-08
JPH11112028A (en) * 1997-10-02 1999-04-23 Matsushita Electron Corp Semiconductor light emitting device
JP2000277813A (en) * 1999-03-26 2000-10-06 Matsushita Electric Works Ltd Light source device
JP2001144333A (en) * 1999-11-10 2001-05-25 Sharp Corp Light-emitting device and manufacturing method therefor
JP2003037292A (en) * 2001-07-25 2003-02-07 Matsushita Electric Works Ltd Light source device and manufacturing method therefor
JP2003101081A (en) * 1996-11-05 2003-04-04 Nichia Chem Ind Ltd Light-emitting diode
JP2003152225A (en) * 2001-08-28 2003-05-23 Matsushita Electric Works Ltd Light emitting device
JP2003163376A (en) * 2001-11-29 2003-06-06 Matsushita Electric Ind Co Ltd Wavelength conversion material and light emitting element
JP2003163381A (en) * 2001-11-26 2003-06-06 Citizen Electronics Co Ltd Surface mount light emitting diode and its manufacturing method
JP2003168829A (en) * 2001-09-19 2003-06-13 Matsushita Electric Works Ltd Light emitting device

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821775A (en) * 1971-09-23 1974-06-28 Spectronics Inc Edge emission gaas light emitter structure
JPH01160864U (en) * 1988-04-11 1989-11-08
JP2003101081A (en) * 1996-11-05 2003-04-04 Nichia Chem Ind Ltd Light-emitting diode
JPH11112028A (en) * 1997-10-02 1999-04-23 Matsushita Electron Corp Semiconductor light emitting device
JP2000277813A (en) * 1999-03-26 2000-10-06 Matsushita Electric Works Ltd Light source device
JP2001144333A (en) * 1999-11-10 2001-05-25 Sharp Corp Light-emitting device and manufacturing method therefor
JP2003037292A (en) * 2001-07-25 2003-02-07 Matsushita Electric Works Ltd Light source device and manufacturing method therefor
JP2003152225A (en) * 2001-08-28 2003-05-23 Matsushita Electric Works Ltd Light emitting device
JP2003168829A (en) * 2001-09-19 2003-06-13 Matsushita Electric Works Ltd Light emitting device
JP2003163381A (en) * 2001-11-26 2003-06-06 Citizen Electronics Co Ltd Surface mount light emitting diode and its manufacturing method
JP2003163376A (en) * 2001-11-29 2003-06-06 Matsushita Electric Ind Co Ltd Wavelength conversion material and light emitting element

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340472A (en) * 2004-05-26 2005-12-08 Kyocera Corp Light-emitting device and illuminator
US8809892B2 (en) 2005-07-04 2014-08-19 Seoul Semiconductor Co., Ltd. Light emitting diode and method of fabricating the same
JP2008544568A (en) * 2005-07-04 2008-12-04 ソウル セミコンダクター カンパニー リミテッド Light emitting diode and manufacturing method thereof
WO2007077960A1 (en) * 2006-01-04 2007-07-12 Showa Denko K.K. Semiconductor light-emitting device
JP2007184319A (en) * 2006-01-04 2007-07-19 Showa Denko Kk Semiconductor light emitting device
KR101031279B1 (en) * 2006-01-04 2011-04-29 쇼와 덴코 가부시키가이샤 Semiconductor light-emitting device
JP2008085282A (en) * 2006-01-27 2008-04-10 Kyocera Corp Wiring board for light emitting element and light emitting device
KR100822317B1 (en) * 2006-04-21 2008-04-18 주식회사 엘티아이 Back light unit for portable terminal unit
JP2008047539A (en) * 2006-08-09 2008-02-28 Philips Lumileds Lightng Co Llc Lighting system with wavelength converting element side holding heat sink
JP2010114218A (en) * 2008-11-05 2010-05-20 Toshiba Corp Light-emitting device
US9234632B2 (en) 2009-02-25 2016-01-12 Rohm Co., Ltd. LED lamp
JP2010198919A (en) * 2009-02-25 2010-09-09 Rohm Co Ltd Led lamp
US9797554B2 (en) 2009-02-25 2017-10-24 Rohm Co., Ltd. LED lamp
WO2010098349A1 (en) * 2009-02-25 2010-09-02 ローム株式会社 Led lamp
US11608941B2 (en) 2009-02-25 2023-03-21 Rohm Co., Ltd. LED lamp
US10190729B2 (en) 2009-02-25 2019-01-29 Rohm Co., Ltd. LED lamp
CN102333987A (en) * 2009-02-25 2012-01-25 罗姆股份有限公司 Led lamp
US11629826B2 (en) 2009-02-25 2023-04-18 Rohm Co., Ltd. LED lamp
US8444882B2 (en) 2009-02-27 2013-05-21 Sony Chemical & Information Device Corporation Anisotropic conductive film and light emitting device
KR101695994B1 (en) * 2009-02-27 2017-01-13 데쿠세리아루즈 가부시키가이샤 Anisotropic conductive film and light-emitting device
KR20110126104A (en) * 2009-02-27 2011-11-22 소니 케미카루 앤드 인포메이션 디바이스 가부시키가이샤 Anisotropic conductive film and light-emitting device
JP2010225597A (en) * 2009-02-27 2010-10-07 Sony Chemical & Information Device Corp Anisotropic conductive film and light-emitting device
WO2010098273A1 (en) * 2009-02-27 2010-09-02 ソニーケミカル&インフォメーションデバイス株式会社 Anisotropic conductive film and light-emitting device
JP2011044356A (en) * 2009-08-21 2011-03-03 Daishi Densetsu Kk Led electric bulb
JP2011198560A (en) * 2010-03-18 2011-10-06 Stanley Electric Co Ltd Vehicular lighting fixture
KR101742615B1 (en) * 2010-09-20 2017-06-01 엘지이노텍 주식회사 A light emitting device package and a light emitting module
KR101326892B1 (en) 2011-12-15 2013-11-11 엘지이노텍 주식회사 Optical member, light emitting device and display device having the same and method of fabricating the same
CN103511935A (en) * 2012-06-08 2014-01-15 日立空调·家用电器株式会社 Lighting device
KR101415930B1 (en) 2012-09-17 2014-07-04 주식회사 루멘스 light emitting device package and back light unit including the same
JP2013030812A (en) * 2012-11-06 2013-02-07 Mitsubishi Chemicals Corp Substrate for led chip fixation and method of manufacturing the same
KR101766052B1 (en) 2015-10-28 2017-08-08 한국광기술원 Lighting device for outdoor

Also Published As

Publication number Publication date
JP3921474B2 (en) 2007-05-30

Similar Documents

Publication Publication Date Title
JP3898721B2 (en) Light emitting device and lighting device
KR101114305B1 (en) Light-emitting device and illuminating device
JP3921474B2 (en) Light emitting device and lighting device
JP2005243973A (en) Light-emitting device and luminaire
JP2006237264A (en) Light emitting device and lighting apparatus
JP2006049814A (en) Light emitting device and illumination system
JP4143043B2 (en) Light emitting device and lighting device
JP2006210627A (en) Light emitting element housing package, light emitting unit, and lighting device
JP2005210042A (en) Light emitting apparatus and illumination apparatus
JP2006295230A (en) Light emitting device and lighting apparatus
JP2006093399A (en) Light-emitting device, its manufacturing method and luminaire
JP2006237646A (en) Light-emitting device
JP2005039194A (en) Package for housing light emitting element, light emitting device, and luminair
JP2006066657A (en) Light emitting device and lighting device
JP4845370B2 (en) Light emitting device and lighting device
JP2006100441A (en) Light emitting element housing package, light emitting device, and illumination device
JP4557613B2 (en) Light emitting element storage package, light emitting device, and lighting device
JP4417757B2 (en) LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND LIGHTING DEVICE
JP2005310911A (en) Package for housing light emitting element, light emitting device, and lighting apparatus
JP4511238B2 (en) Light emitting element storage package, light emitting device, and lighting device
JP4091926B2 (en) Light emitting device and lighting device
JP2007208292A (en) Light-emitting device
JP4637623B2 (en) Light emitting device and lighting device
JP4601404B2 (en) Light emitting device and lighting device
JP2006093612A (en) Light emitting device and illuminator

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060821

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060829

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061030

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070213

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070219

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110223

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110223

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120223

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120223

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130223

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees