JP2008085282A - Wiring board for light emitting element and light emitting device - Google Patents

Wiring board for light emitting element and light emitting device Download PDF

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JP2008085282A
JP2008085282A JP2006319959A JP2006319959A JP2008085282A JP 2008085282 A JP2008085282 A JP 2008085282A JP 2006319959 A JP2006319959 A JP 2006319959A JP 2006319959 A JP2006319959 A JP 2006319959A JP 2008085282 A JP2008085282 A JP 2008085282A
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light emitting
emitting element
wiring board
metal
wiring
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JP4895777B2 (en
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Yasuhiro Sasaki
康博 佐々木
Tomohide Hasegawa
智英 長谷川
Hidehiro Arikawa
秀洋 有川
Minako Izumi
美奈子 泉
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board for a light emitting element which is excellent in heat dissipation properties and can be manufactured at a low cost, and a light emitting device. <P>SOLUTION: The wiring board for the light emitting element comprises: a planar metal substrate 1 composed of a sintered metal; a loading part 11 for loading the light emitting element 23 formed on one main surface of the metal substrate 1; a through insulator 3 composed of ceramics passing through the metal substrate 1; a through conductor 5 electrically insulated from the metal substrate 1 and passing through the inner side of the through insulator 3; wiring 7 electrically connected to the through conductor 5, insulated from the metal substrate 1 and provided around the loading part 11; and a reflection part 9 composed of the sintered metal formed so as to surround the loading part 11 and the wiring 7. The metal substrate 1, the through insulator 3, the through conductor 5, the wiring 7 and the reflection part 9 are simultaneously baked. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、例えば、発光ダイオード等の発光素子を搭載するための発光素子用配線基板ならびに発光装置に関する。   The present invention relates to a light emitting element wiring board and a light emitting device for mounting a light emitting element such as a light emitting diode.

従来、ＬＥＤを用いた発光装置は、非常に発光効率が高く、しかも、白熱電球などと比較すると発光に伴い発生する熱量が小さいために様々な用途に用いられてきた。しかしながら、白熱電球や蛍光灯などよりも発光量が小さいために、照明用ではなく、表示用の光源として用いられ、通電量も３０ｍＡ程度と非常に小さいものであった（例えば特許文献１を参照。）。   Conventionally, light emitting devices using LEDs have been used for various applications because of their extremely high luminous efficiency and the small amount of heat generated by light emission compared to incandescent bulbs. However, since it emits less light than incandescent bulbs, fluorescent lamps, etc., it is not used for illumination but as a light source for display, and the energization amount is as very small as about 30 mA (see, for example, Patent Document 1). .)

そして、近年では、発光素子を用いた発光装置の高輝度、白色化に伴い、携帯電話や大型液晶ＴＶ等のバックライトに発光装置が多く用いられてきている。しかしながら、発光素子の輝度が向上するとともに、発光装置から発生する熱も増加している。発光素子の輝度の低下を防止するためには、このような熱を素子より速やかに放散する、高い熱放散性を有する発光素子用配線基板が必要となっている（例えば特許文献２、３を参照。）。   In recent years, with the increase in brightness and whiteness of light-emitting devices using light-emitting elements, light-emitting devices have been frequently used for backlights of mobile phones, large liquid crystal TVs, and the like. However, the luminance of the light emitting element is improved and the heat generated from the light emitting device is also increasing. In order to prevent the luminance of the light emitting element from being lowered, a wiring board for a light emitting element having a high heat dissipation property that dissipates such heat more quickly than the element is required (for example, Patent Documents 2 and 3). reference.).

そして、発光素子用配線基板の放熱性を改善する手段として、発光素子用配線基板に放熱穴を形成するとともに、発光素子が形成される側の放熱穴を覆う補助セラミックシートを設け、この補助セラミックシートに発光素子を搭載することが提案されている。また、この手法では、放熱穴に導体ペーストを充填することも提案されている（例えば特許文献４を参照）。   As a means for improving the heat dissipation of the light emitting element wiring board, a heat dissipation hole is formed in the light emitting element wiring board, and an auxiliary ceramic sheet is provided to cover the heat dissipation hole on the side where the light emitting element is formed. It has been proposed to mount a light emitting element on a sheet. In this method, it has also been proposed to fill a heat radiation hole with a conductive paste (see, for example, Patent Document 4).

また、発光素子用配線基板においては、発光素子からの光を有効に利用するために発光素子を取り囲むように反射部を設けることも行われている。この反射部は例えば金属により形成されるもので発光素子用配線基板とは別途作製され、発光素子用配線基板に接着剤などを用いて取り付けられている（例えば特許文献５を参照。）。
特開２００２−１３４７９０号公報 特開平１１−１１２０２５号公報 特開２００３−３４７６００号公報 特許３４６９８９０号公報 特開２００４−３３５５１８号広報 In addition, in a wiring board for a light emitting element, in order to effectively use light from the light emitting element, a reflection portion is provided so as to surround the light emitting element. The reflecting portion is formed of, for example, metal, and is separately manufactured from the light emitting element wiring substrate and attached to the light emitting element wiring substrate using an adhesive or the like (see, for example, Patent Document 5).
JP 2002-134790 A Japanese Patent Laid-Open No. 11-112025 JP 2003-347600 A Japanese Patent No. 3469890 Japanese Laid-Open Patent Publication No. 2004-335518

しかしながら、特許文献４に記載の方法では、放熱穴を形成した場合においても放熱穴の内部は熱伝導性の悪い空気が存在するのみで、放熱性を格段に向上させることは望めない。また、放熱穴に導体ペーストを充填したとしても、発光素子用配線基板と導体ペーストの固定、接続の信頼性に関する問題が依然解決されておらず、また、基板の設計制約などにより放熱穴の大きさや設置部位は限られたものとなり、放熱性には限界がある。   However, in the method described in Patent Document 4, even when the heat radiating hole is formed, only air with poor thermal conductivity exists in the heat radiating hole, and it is not possible to significantly improve the heat radiating performance. Moreover, even if conductor paste is filled in the heat dissipation holes, the problems related to the fixing and connection reliability of the wiring board for the light emitting element and the conductor paste have not been solved. Saddle installation sites are limited, and heat dissipation is limited.

また、引用文献５に記載された反射部を設けた場合でも、光の有効利用はできるものの、基体平面部に発光素子を搭載する搭載部を設けている為、発光素子からの光の取り出し効率が十分でなかった。また、別途作製した反射部を取り付ける工程が必要であることから、高価となり、しかも熱伝導性の高い金属性の反射部を用いているにもかかわらず、他の大部分が樹脂やセラミックにより形成されているため、熱が反射部にまで到達しにくく、放熱性の向上にはほとんど寄与していなかった。 In addition, even when the reflecting portion described in the cited document 5 is provided, although light can be used effectively, the light extraction efficiency from the light emitting element is provided because the mounting portion for mounting the light emitting element is provided on the base plane portion. Was not enough. In addition, it requires a step of attaching a separately manufactured reflecting portion, which is expensive, and despite the fact that a metallic reflecting portion with high thermal conductivity is used, most of the other is formed of resin or ceramic. Therefore, it is difficult for heat to reach the reflection portion, and hardly contributes to improvement in heat dissipation.

従って本発明は、安価で熱放散性に優れ光の取り出し効率を高くすることができる発光素子用配線基板ならびに発光装置を提供することを目的とする。   Accordingly, an object of the present invention is to provide a light-emitting element wiring board and a light-emitting device that are inexpensive, excellent in heat dissipation, and capable of increasing light extraction efficiency.

本発明の発光素子用配線基板は、焼結金属からなる平板状の金属基体と、該金属基体の一方の主面に形成された発光素子を搭載する搭載部と、前記金属基体を貫通するセラミックスからなる貫通絶縁体と、前記金属基体と電気的に絶縁されるとともに前記貫通絶縁体の内側を貫通する貫通導体と、前記貫通導体と電気的に接続されるとともに前記金属基体と絶縁され前記搭載部の周囲に設けられた配線と、前記搭載部と前記配線とを取り囲むように形成された焼結金属からなる反射部とを備えるとともに、前記金属基体と前記貫通絶縁体と前記貫通導体と前記配線と前記反射部とが同時焼成されてなることを特徴とする。   A wiring board for a light emitting device of the present invention includes a flat metal base made of sintered metal, a mounting portion for mounting a light emitting element formed on one main surface of the metal base, and a ceramic penetrating the metal base. A through-insulator comprising: a through-conductor that is electrically insulated from the metal substrate and penetrates the inside of the through-insulator; and that is electrically connected to the through-conductor and insulated from the metal substrate; And a reflective portion made of sintered metal formed so as to surround the mounting portion and the wiring, and the metal base, the through insulator, the through conductor, and the The wiring and the reflection portion are fired at the same time.

また、前記搭載部の周囲に、該搭載部に沿って凸部が設けられていることが望ましい。   In addition, it is desirable that a convex portion is provided around the mounting portion along the mounting portion.

また、前記搭載部の周囲に、該搭載部を取り囲むように絶縁体が設けられていることが望ましい。   It is desirable that an insulator is provided around the mounting portion so as to surround the mounting portion.

また、前記搭載部を備えた前記金属基体の一方の主面が突起状に形成され、突起状の突起部の上面に前記搭載部が形成されていることが望ましい。   Moreover, it is desirable that one main surface of the metal base provided with the mounting portion is formed in a protruding shape, and the mounting portion is formed on an upper surface of the protruding protrusion.

また、上方から見た前記突起部の断面積が上側で小さくなるように形成されていることが望ましい。   Further, it is desirable that the cross-sectional area of the protrusion as viewed from above is formed so as to be small on the upper side.

また、前記反射部の高さが前記突起部の高さよりも高いことが望ましい。   In addition, it is desirable that the height of the reflecting portion is higher than the height of the protruding portion.

また、本発明の発光素子用配線基板は、前記金属基体の前記搭載部が形成された側の主面にＡｇめっきが施されていることが望ましい。   In the light emitting element wiring board of the present invention, it is preferable that Ag plating is applied to a main surface of the metal base on which the mounting portion is formed.

また、本発明の発光素子用配線基板は、前記金属基体の熱伝導率が１５０Ｗ／（ｍ・Ｋ）以上であることが望ましい。   In the light emitting device wiring board of the present invention, it is desirable that the metal substrate has a thermal conductivity of 150 W / (m · K) or more.

また、本発明の発光素子用配線基板は、前記金属基体がＷ、ＭｏおよびＣｕのうち、少なくとも１種を主成分とすることが望ましい。   In the light-emitting element wiring board according to the present invention, it is preferable that the metal substrate has at least one of W, Mo and Cu as a main component.

また、本発明の発光素子用配線基板は、前記反射部が前記金属基体と同じ組成からなることが望ましい。   In the light-emitting element wiring board of the present invention, it is desirable that the reflecting portion has the same composition as the metal substrate.

本発明の発光装置は、以上説明した発光素子用配線基板の前記搭載部に発光素子を搭載してなることを特徴とする。   The light emitting device of the present invention is characterized in that a light emitting element is mounted on the mounting portion of the wiring board for a light emitting element described above.

本発明の発光素子用配線基板は、基体を焼結金属で形成することにより、樹脂モールド基板やセラミック基板などよりも高い熱伝導率を有し、発光素子から発生する熱を基体全体から効率良く、速やかに系外へ放散することができ、発光素子が過剰に加熱されることを防止できる。そのため輝度低下防止あるいは、さらなる高輝度化が可能となる。しかも金属基体に、絶縁体を介して電気的に絶縁された配線を表面に形成し、更に前記金属基体に貫通して設ける事で、多層化が可能となり複雑な配線設計への対応や基板の小型化が可能となる。また、発光素子搭載部と前記配線とを取り囲むように金属からなる反射部を形成することにより、金属基体からだけでなく反射部からも発光素子が生じる熱を放散することができる。そして反射部によって発光素子を保護できるとともに、発光素子の周辺に蛍光体などを容易に配置することができる。また、反射部により発光素子が発する光を反射させて光の取り出し効率を増加させ、高輝度化を実現することができる。さらに、金属基体および反射部が焼結金属から成ることにより、金属基体と貫通絶縁体と貫通導体と配線と反射部とを同時焼成にて作製することができ、これによりコストを低減することができる。   The wiring board for a light emitting device of the present invention has a higher thermal conductivity than that of a resin mold substrate, a ceramic substrate, or the like by forming the substrate from a sintered metal, and efficiently generates heat from the light emitting device from the entire substrate. It is possible to quickly dissipate out of the system and to prevent the light emitting element from being heated excessively. For this reason, it is possible to prevent a decrease in luminance or to further increase the luminance. In addition, by forming wiring electrically insulated through an insulator on the surface of the metal substrate and further penetrating through the metal substrate, it is possible to increase the number of layers and to cope with complicated wiring designs and the substrate. Miniaturization is possible. In addition, by forming a reflective portion made of metal so as to surround the light emitting element mounting portion and the wiring, heat generated by the light emitting element can be dissipated not only from the metal substrate but also from the reflective portion. The light emitting element can be protected by the reflecting portion, and a phosphor or the like can be easily disposed around the light emitting element. Further, the light emitted from the light emitting element can be reflected by the reflecting portion to increase the light extraction efficiency, and high luminance can be realized. Furthermore, since the metal substrate and the reflecting portion are made of sintered metal, the metal substrate, the penetrating insulator, the penetrating conductor, the wiring, and the reflecting portion can be manufactured by simultaneous firing, thereby reducing the cost. it can.

搭載部の周囲に、搭載部に沿って凸部を設けることで、容易に搭載される発光素子の位置決めをすることができる。   By providing a convex portion along the mounting portion around the mounting portion, the light emitting element to be mounted can be easily positioned.

また、搭載部の周囲に、搭載部を取り囲むように絶縁体を設けることで、搭載される発光素子と金属基体の搭載部とを半田や金―錫合金（Ａｕ−ｓｎ）などの金属で固定した場合であっても、容易に搭載される発光素子の位置決めをすることができる。   In addition, by providing an insulator around the mounting portion, the light emitting element to be mounted and the mounting portion of the metal substrate are fixed with a metal such as solder or gold-tin alloy (Au-sn). Even in this case, the light emitting element to be mounted can be easily positioned.

また、搭載面に搭載される発光素子は、基板側と反対側の光の取り出し方向に光を放射するだけでなく、発光素子の側面からも光を放射する。従って、突起部の上面に搭載部を設けることで発光素子の側面から出た光が直接反射部に反射する割合が増加し、反射による光の損失を抑制することができるため、光の取り出し効率の高い発光素子用配線基板が実現される。   The light emitting element mounted on the mounting surface not only emits light in the light extraction direction opposite to the substrate side but also emits light from the side surface of the light emitting element. Therefore, by providing the mounting portion on the upper surface of the protrusion, the ratio of the light emitted from the side surface of the light emitting element directly reflected by the reflecting portion is increased, and the loss of light due to reflection can be suppressed. A wiring board for a light emitting element having a high height is realized.

また、突起部の断面形状を上側で小さくなるようにすると突起部の側面が傾斜し、この突起部の側面が光を基板とは逆側に誘導することができるので、柱状に形成される素子搭載部に比べて光の取り出し効率の高い発光素子用配線基板が実現される。   In addition, when the cross-sectional shape of the protrusion is reduced on the upper side, the side surface of the protrusion is inclined, and the side surface of the protrusion can guide light to the side opposite to the substrate. A light-emitting element wiring board having higher light extraction efficiency than the mounting portion is realized.

また、発光素子用配線基板に、突起部よりも高い枠体を形成することで、封止樹脂で突起部を覆う際に、封止樹脂が流れ出すことを抑制できるために、発光装置の製造が容易となる。また、枠体によって突起部を保護することもできるため取り扱い性も向上する。   In addition, by forming a frame body higher than the protrusions on the wiring board for the light emitting element, it is possible to suppress the sealing resin from flowing out when the protrusions are covered with the sealing resin. It becomes easy. In addition, since the protrusion can be protected by the frame body, the handleability is improved.

また、前記金属基体の搭載部が形成された側の主面にＡｇめっきを施すことで発行素子からの光を効率よく反射し、高輝度とすることができる。また、本発明においては、基体が焼結金属により形成されているため、樹脂モールド基板やセラミック基板に比べめっきを施す部位へ、あらかじめ金属層の転写や印刷等を施す必要がなく工程を簡略化することもできる。   Further, by applying Ag plating to the main surface on the side where the mounting portion of the metal substrate is formed, the light from the issuing element can be efficiently reflected and the luminance can be increased. In the present invention, since the base is formed of sintered metal, it is not necessary to transfer or print the metal layer in advance on the portion to be plated compared to the resin mold substrate or ceramic substrate, thus simplifying the process. You can also

また、前記金属基体の熱伝導率を１５０Ｗ／（ｍ・Ｋ）以上とすることにより良好な熱放散性が実現でき、発光素子から発生する熱を発光素子用配線基板全体より速やかに放散することができる。   In addition, by making the thermal conductivity of the metal substrate 150 W / (m · K) or more, good heat dissipation can be realized, and heat generated from the light emitting element can be quickly dissipated from the entire wiring board for the light emitting element. Can do.

また、Ｗ、ＭｏおよびＣｕのうち少なくとも１種を主成分として前記金属基体を形成することで、容易に熱放散性に優れた発光素子用配線基板を得ることができ、なかでもＣｕを主成分とした場合、より高い熱放散性を実現できる。   In addition, by forming the metal substrate with at least one of W, Mo, and Cu as a main component, a light emitting element wiring board having excellent heat dissipation can be easily obtained, and Cu is the main component. In this case, higher heat dissipation can be realized.

また、反射部と金属基体とを同じ組成とすることで反射部からも効率よく放熱できるとともに、焼成時における反射部と金属基体との収縮挙動が一致するため、同時焼成による変形を抑制でき高い寸法精度の発光素子用配線基板を得る事ができる。   In addition, by making the reflective part and the metal base have the same composition, heat can be efficiently radiated from the reflective part, and the shrinkage behavior of the reflective part and the metal base coincides during firing, so that deformation due to simultaneous firing can be suppressed and high. A light-emitting element wiring board with dimensional accuracy can be obtained.

以上説明した本発明の発光素子用配線基板に発光素子を搭載した本発明の発光装置によれば、発光素子からの発熱を速やかに装置外に放出することができるため、発熱による輝度低下を抑制できる。   According to the light emitting device of the present invention in which the light emitting element is mounted on the wiring substrate for the light emitting element of the present invention described above, the heat generation from the light emitting element can be quickly discharged outside the device, so that the luminance reduction due to the heat generation is suppressed. it can.

本発明の発光素子用配線基板は、例えば、図１（ａ）に示すように、焼結金属により形成された金属基体１と、この金属基体１を貫通して設けられた貫通絶縁体３と、この貫通絶縁体３を貫通して金属基体１と絶縁されるように設けられた貫通導体５と、この貫通導体５の端面と電気的に接続され金属基体１と絶縁された配線７と、この配線７を取り囲むように設けられ、焼結金属により形成された反射部９とを備えている。   For example, as shown in FIG. 1A, a wiring board for a light-emitting element according to the present invention includes a metal substrate 1 formed of sintered metal, and a through insulator 3 provided through the metal substrate 1. A through conductor 5 provided so as to be insulated from the metal substrate 1 through the through insulator 3, a wiring 7 electrically connected to an end surface of the through conductor 5 and insulated from the metal substrate 1, A reflection portion 9 is provided so as to surround the wiring 7 and is formed of sintered metal.

配線７は、配線７が形成された側の金属基体１の主面に搭載される発光素子の搭載部１１の周囲に配置されている。言い換えると、反射部９は搭載部１１と配線７とを取り囲むように配置されている。   The wiring 7 is arranged around the light emitting element mounting portion 11 mounted on the main surface of the metal base 1 on the side where the wiring 7 is formed. In other words, the reflecting portion 9 is disposed so as to surround the mounting portion 11 and the wiring 7.

そして、本発明の発光素子用配線基板１３においては、これらの金属基体１と貫通絶縁体３と貫通導体５と配線７と反射部９とが同時焼成されている。   And in the wiring board 13 for light emitting elements of this invention, these metal base | substrates 1, the penetration insulator 3, the penetration conductor 5, the wiring 7, and the reflection part 9 are baked simultaneously.

本発明の発光素子用配線基板１３によれば、金属基体１ならびに反射部９の材料として焼結金属を用いるとともに、金属基体１を貫通するように貫通絶縁体３および貫通導体５を設けることが重要である。即ち、金属基体１ならびに反射部９の材料として焼結金属を用いることにより、樹脂モールド基板やセラミック基板よりも高い放熱性を確保し、発光素子から発生する熱を発光素子用配線基板１３全体から効率よく放出することができる。   According to the light emitting element wiring substrate 13 of the present invention, a sintered metal is used as the material of the metal base 1 and the reflecting portion 9, and the through insulator 3 and the through conductor 5 are provided so as to penetrate the metal base 1. is important. That is, by using a sintered metal as the material of the metal substrate 1 and the reflecting portion 9, heat dissipation higher than that of a resin mold substrate or a ceramic substrate is ensured, and heat generated from the light emitting element is transmitted from the entire wiring board 13 for the light emitting element. It can be released efficiently.

また、金属基体１に貫通絶縁体３および貫通導体５を設けることにより、発光素子用配線基板１３の多層化、配線設計の多様化、小型化が可能となる。そして、金属基体１に焼結金属からなる反射部９を設けることで発光素子から生じる光を反射させて、光の取り出し効率を向上させるとともに、発光素子から発生した熱を放散し、発光素子用配線基板１３の放熱性を向上させることができる。   Further, by providing the through insulator 3 and the through conductor 5 on the metal base 1, it is possible to make the wiring board 13 for the light emitting element multilayer, diversify the wiring design, and reduce the size. Then, by providing the metal substrate 1 with the reflecting portion 9 made of sintered metal, the light generated from the light-emitting element is reflected to improve the light extraction efficiency, and the heat generated from the light-emitting element is dissipated. The heat dissipation of the wiring board 13 can be improved.

また、金属基体１および反射部９を焼結金属により形成することで、金属基体１と、貫通絶縁体３と貫通導体５と配線７および反射部９とを同時焼成にて作製することができるため、部材の数や工程数を削減することができ、コストを低減することができる。   Further, by forming the metal substrate 1 and the reflection portion 9 from sintered metal, the metal substrate 1, the through insulator 3, the through conductor 5, the wiring 7, and the reflection portion 9 can be produced by simultaneous firing. Therefore, the number of members and the number of processes can be reduced, and the cost can be reduced.

また、図１（ｂ）に示すように、金属基体１と貫通絶縁体３との境界は、クラックの発生や隙間の発生が起こりやすいことから、被覆絶縁層１５で覆うことが望ましい。なお、この被覆絶縁層１５は貫通導体５を露出させて配線７と接続させるため、例えばリング状に形成されている。この被覆絶縁層１５は貫通絶縁体３との接合性を考慮すれば、貫通絶縁体３と同様の組成物で作製することが望ましい。   Further, as shown in FIG. 1B, the boundary between the metal substrate 1 and the through insulator 3 is preferably covered with a covering insulating layer 15 because cracks and gaps are likely to occur. The insulating cover layer 15 is formed, for example, in a ring shape so that the through conductor 5 is exposed and connected to the wiring 7. This covering insulating layer 15 is preferably made of the same composition as that of the through insulator 3 in consideration of the bondability with the through insulator 3.

本発明の発光素子用配線基板１３においては、図１０（ａ）に示すように搭載部１１の周囲に、搭載部に沿って凸部１６ａが設けられていることが望ましい。このように凸部１６ａを設けることで凸部１６ａによって、搭載部１１に搭載される発光素子を容易に位置決めすることができる。この凸部１６ａは、金属基体１の表面に印刷によって金属基体１を形成する焼結金属と同じ組成物で形成してもよく、あるいは非金属の材質によって形成してもよい。   In the light emitting element wiring substrate 13 of the present invention, as shown in FIG. 10A, it is desirable that a convex portion 16a is provided around the mounting portion 11 along the mounting portion. Thus, by providing the convex part 16a, the light emitting element mounted in the mounting part 11 can be easily positioned by the convex part 16a. The convex portion 16a may be formed of the same composition as the sintered metal that forms the metal substrate 1 by printing on the surface of the metal substrate 1, or may be formed of a non-metallic material.

この凸部１６ａは搭載部１１の周囲を取り囲む必要はないが、例えば、凸部１６ａを搭載部１１の周囲を取り囲む用に形成した場合には、搭載される発光素子と搭載部１１との間に用いられる接着剤の種類によらず、凸部１６ａが、例えば、堤のような機能を発揮し、接着材が搭載部１１の外にあふれることを抑制することができる。   The convex portion 16 a does not need to surround the mounting portion 11, but, for example, when the convex portion 16 a is formed to surround the mounting portion 11, the space between the light emitting element to be mounted and the mounting portion 11 is not limited. Regardless of the type of adhesive used in the above, the convex portion 16a can function, for example, as a bank, and the adhesive can be prevented from overflowing outside the mounting portion 11.

この凸部１６ａの高さは１０μｍ以上とすることが望ましく、搭載される発光素子の高さよりも低ければよい。   The height of the convex portion 16a is preferably 10 μm or more, and may be lower than the height of the light emitting element to be mounted.

また、本発明の発光素子用配線基板１３においては、図１０（ｂ）に示すように搭載部１１の周囲に、搭載部を取り囲むように絶縁体１６ｂが設けられていることが望ましい。   In the light emitting element wiring substrate 13 of the present invention, it is desirable that an insulator 16b is provided around the mounting portion 11 so as to surround the mounting portion, as shown in FIG.

これにより、搭載される発光素子と搭載部１１との間に用いられる接着剤として、金属を用いた場合には、絶縁体１６ｂと接着剤との濡れ性が悪いために、接着材が搭載部１１からはみ出すことを抑制することができる。 As a result, when a metal is used as the adhesive used between the light emitting element to be mounted and the mounting portion 11, since the wettability between the insulator 16 b and the adhesive is poor, the adhesive is used as the mounting portion. Protruding from 11 can be suppressed.

このように搭載部を取り囲むように絶縁体１６ｂを設ける場合には、絶縁体１６ｂが露出していれば、金属基体１に埋め込まれていてもよい。この絶縁体１６ｂは貫通絶縁体３と同じ材料を用いることが望ましく、金属基体１と同時焼成して形成することが望ましい。   When the insulator 16b is provided so as to surround the mounting portion as described above, the insulator 16b may be embedded in the metal substrate 1 as long as the insulator 16b is exposed. The insulator 16b is preferably made of the same material as that of the through insulator 3, and is preferably formed by simultaneous firing with the metal substrate 1.

また、図２（ａ）、（ｂ）に示すように、この金属基体１の一方の主面１ａを突起状に形成して突起部３０を設け、この突起部３０の上面３０ａを搭載部１１とすることで、搭載部１１に搭載される発光素子から発せられる光のうち、発光素子の側面から出力される光の利用効率が向上するため発光効率を向上させることができる。   Further, as shown in FIGS. 2A and 2B, one main surface 1 a of the metal substrate 1 is formed in a protruding shape to provide a protruding portion 30, and the upper surface 30 a of the protruding portion 30 is provided on the mounting portion 11. As a result, the utilization efficiency of light output from the side surface of the light emitting element among the light emitted from the light emitting element mounted on the mounting portion 11 is improved, so that the light emission efficiency can be improved.

また、上方からみた突起部３０の断面積が上方で小さくなるように形成させて突起部３０の側面３０ｂの少なくとも一部を傾斜させることが望ましい。   In addition, it is desirable that the cross-sectional area of the protruding portion 30 as viewed from above is formed so as to decrease upward, and at least a part of the side surface 30b of the protruding portion 30 is inclined.

すなわち、突起部３０の側面３０ｂにおいて裾状に広がっている部分があることが望ましい。   In other words, it is desirable that the side surface 30b of the protrusion 30 has a portion that spreads in a skirt shape.

言い換えると、この突起部３０は上方に突出するにつれて小さくなることが望ましい。上方に突出するとは、具体的には金属基体１の厚み方向の主面１ａを含む仮想一平面から突出することを意味する。なお、突起部３０は金属基体１と一体的に形成されていてもよく、金属基体１の表面に金属基体１とは異なる材質からなる突起部３０が配置されていても良い。例えば、突起部３０は四角錐台状に形成され、主面１ａから突出するにつれて先細状に形成される。また、上面３０ａは正方形となるように形成され、各辺が反射部９の各辺とそれぞれ平行に形成される。このような形態とすることで、搭載部１１に搭載される発光素子から発せられる光のうち、金属基体１側に入射する光を突起部３０の側面３０ｂから反射部９の内壁面９ａに垂直に反射させることができ、またあるいは金属基体１と逆側、言い換えると発光素子用配線基板１３の開口部側に光を誘導できるため、発光効率を向上させることができる。   In other words, it is desirable that the protrusion 30 becomes smaller as it protrudes upward. Projecting upward means specifically projecting from a virtual plane including the main surface 1 a in the thickness direction of the metal substrate 1. The protrusion 30 may be formed integrally with the metal substrate 1, and the protrusion 30 made of a material different from the metal substrate 1 may be disposed on the surface of the metal substrate 1. For example, the protrusion 30 is formed in a quadrangular frustum shape, and is formed in a tapered shape as it protrudes from the main surface 1a. Further, the upper surface 30 a is formed to be a square, and each side is formed in parallel with each side of the reflecting portion 9. By adopting such a configuration, out of light emitted from the light emitting element mounted on the mounting portion 11, light incident on the metal substrate 1 side is perpendicular to the inner wall surface 9 a of the reflecting portion 9 from the side surface 30 b of the protruding portion 30. In addition, the light can be guided to the side opposite to the metal substrate 1, in other words, to the opening side of the light emitting element wiring substrate 13, so that the light emission efficiency can be improved.

なお、突起部３０の上面にも凸部１６ａや絶縁体１６ｂを設けてもよい。   In addition, you may provide the convex part 16a and the insulator 16b also on the upper surface of the projection part 30. FIG.

また、突起部３０の高さを反射部９の高さよりも低くすることで、突起部３０を反射部９内に収められるので、発光素子用配線基板１３の取り扱い性が向上する。また、発光素子用配線基板１３に搭載される発光素子の上面よりも反射部９の高さを大きくした場合には発光素子を保護することもできる。   Moreover, since the protrusion 30 can be accommodated in the reflection part 9 by making the height of the protrusion 30 lower than the height of the reflection part 9, the handleability of the wiring board 13 for light emitting elements is improved. Moreover, when the height of the reflection part 9 is made larger than the upper surface of the light emitting element mounted on the light emitting element wiring substrate 13, the light emitting element can be protected.

また、前記金属基体１の搭載部１１が形成された側の主面１ａに金属めっき（図示せず）が施されていることが望ましい。また、反射部１１の内壁面９ａにも金属めっき（図示せず）が施されていることが望ましい。これにより、発光素子から出た光が金属めっきによく反射され、発光装置の取り出し効率を向上させることができる。本発明では、金属めっきを施す面が焼結金属で形成されているため、樹脂モールド基板やセラミック基板のようにめっき形成部位への金属層の転写や印刷等を行う必要がなく、工程を簡略化することができる。   Further, it is desirable that metal plating (not shown) is applied to the main surface 1a on the side where the mounting portion 11 of the metal substrate 1 is formed. Moreover, it is desirable that the inner wall surface 9a of the reflecting portion 11 is also subjected to metal plating (not shown). Thereby, the light emitted from the light emitting element is well reflected by the metal plating, and the extraction efficiency of the light emitting device can be improved. In the present invention, since the surface to be subjected to metal plating is formed of sintered metal, there is no need to transfer or print a metal layer on the plating formation portion like a resin mold substrate or a ceramic substrate, and the process is simplified. Can be

この金属めっきは、反射率の点からＡｇめっきとすることが望ましく、安価である点ではＮｉメッキが望ましい。   The metal plating is preferably Ag plating from the viewpoint of reflectance, and Ni plating is preferable from the viewpoint of low cost.

さらに、金属基体１の熱伝導率が、１５０Ｗ／（ｍ・Ｋ）以上であることが望ましい。これにより、良好な放熱性を実現することができ、発光素子から生じる熱を速やかに放散することができる。   Furthermore, it is desirable that the thermal conductivity of the metal substrate 1 is 150 W / (m · K) or more. Thereby, favorable heat dissipation can be realized and heat generated from the light emitting element can be quickly dissipated.

そして、前記金属基体１が、Ｗ、ＭｏおよびＣｕのうち、少なくとも１種を主成分とすることが望ましい。ＷおよびＭｏは高融点金属であるため１３００〜１６００℃程度の高温焼成セラミックスと同時焼成することができる。さらに、熱膨張率が絶縁層を形成するセラミックスに近いため信頼性の高い発光素子用配線基板を作製することができる。また、Ｃｕは熱伝導率が高く、特に放熱性に優れている。また、例えば、貫通絶縁体３としていわゆるガラスセラミックスを用いて、Ｃｕの含有率を高めた場合には、１０００℃程度の低い温度で発光素子用配線基板１３を焼成することもできる。   The metal substrate 1 preferably contains at least one of W, Mo and Cu as a main component. Since W and Mo are refractory metals, they can be co-fired with high-temperature fired ceramics at about 1300 to 1600 ° C. Furthermore, since the coefficient of thermal expansion is close to that of ceramics forming the insulating layer, a highly reliable wiring board for a light-emitting element can be manufactured. Cu has a high thermal conductivity and is particularly excellent in heat dissipation. Further, for example, when so-called glass ceramics is used as the through insulator 3 and the Cu content is increased, the light emitting element wiring substrate 13 can be fired at a temperature as low as about 1000 ° C.

また、これらの金属を組み合わせることにより、所望の熱伝導率や熱膨張率をもつ金属基体１を形成することができる。   Further, by combining these metals, the metal substrate 1 having a desired thermal conductivity and thermal expansion coefficient can be formed.

また、反射部９は、金属基体１と同じ主成分からなることが望ましい。これにより金属基体９と金属基体１との間で合金が形成されるなどして、緻密化の挙動が乱れたりするなどの不具合の発生を抑制することができる。   Further, it is desirable that the reflecting portion 9 is made of the same main component as the metal substrate 1. As a result, it is possible to suppress the occurrence of problems such as the formation of an alloy between the metal base 9 and the metal base 1 and the disturbance of the densification behavior.

また、反射部９が、金属基体１と同じ組成からなることが望ましい。これにより金属基体１と反射部９の同時焼成による変形を抑制することができ、高寸法精度の発光素子用配線基板１３を容易に得ることができる。   Further, it is desirable that the reflecting portion 9 has the same composition as the metal substrate 1. Thereby, the deformation | transformation by simultaneous baking of the metal base | substrate 1 and the reflection part 9 can be suppressed, and the wiring board 13 for light emitting elements with a high dimensional accuracy can be obtained easily.

また、貫通導体５や配線７が、Ｗ、Ｍｏ、ＣｕおよびＡｇのうち少なくとも１種を主成分とすることが望ましい。これにより電気抵抗の低い貫通導体５や配線７を形成できる為、優れた電気特性を有する発光素子用配線基板１３を得ることができる。   Moreover, it is desirable that the through conductor 5 and the wiring 7 have at least one of W, Mo, Cu, and Ag as a main component. Thereby, since the through conductor 5 and the wiring 7 having a low electrical resistance can be formed, the wiring board 13 for a light emitting element having excellent electrical characteristics can be obtained.

また、他にも多少高価ではあるが、金属基体１や貫通導体５および配線７としてＡｌ、Ａｇ、ＡｕおよびＰｔなどの金属を用いることができるのは言うまでもない。   In addition, it is needless to say that metals such as Al, Ag, Au, and Pt can be used as the metal substrate 1, the through conductor 5, and the wiring 7, although they are somewhat expensive.

また、貫通絶縁体３ならびに被覆絶縁層１５が、アルミナ、ムライト、ジルコニア、マグネシア、カルシア、窒化アルミニウム、窒化珪素、そしてガラスセラミックスのうち、少なくとも１種を主成分とすることが望ましい。絶縁性の優れたこれらの材料を用いることにより、貫通絶縁体３ならびに被覆絶縁層１５が薄くても貫通導体５や配線７が金属基体１と充分に絶縁をとることが可能となり、貫通絶縁体３ならびに被覆絶縁層１５を高密度で形成する事ができ、さらに金属基体１との同時焼成も容易となる。   Further, it is desirable that the penetrating insulator 3 and the covering insulating layer 15 are mainly composed of at least one of alumina, mullite, zirconia, magnesia, calcia, aluminum nitride, silicon nitride, and glass ceramics. By using these materials having excellent insulating properties, the through conductor 5 and the wiring 7 can be sufficiently insulated from the metal substrate 1 even if the through insulator 3 and the coating insulating layer 15 are thin. 3 and the covering insulating layer 15 can be formed with high density, and simultaneous firing with the metal substrate 1 is facilitated.

なお、本発明の発光素子用配線基板１３においては、発光素子用配線基板１３の搭載部１１が設けられた側の主面１ａと逆側の主面１ｂには、外部配線基板との接続端子１７が設けられており、被覆絶縁層１５が設けられていることが望ましい。   In the light emitting element wiring substrate 13 of the present invention, the main surface 1b on the side opposite to the main surface 1a on which the mounting portion 11 of the light emitting element wiring substrate 13 is provided is connected to an external wiring substrate. 17 is preferably provided, and the covering insulating layer 15 is preferably provided.

また、例えば図３、図４に示すように、金属基体１は多層であってもよく、反射部９の内壁面９ａには傾斜が設けられていてもよいことはいうまでもない。   Further, for example, as shown in FIGS. 3 and 4, the metal substrate 1 may be a multilayer, and it is needless to say that the inner wall surface 9 a of the reflecting portion 9 may be provided with an inclination.

そして、例えば図３、図４に示すように発光素子用配線基板１３の内部で平面方向に回路が延設されていてもよい。この場合は発光素子用配線基板１３の内部に平面方向に延設された内部配線１９は金属基体１と絶縁する必要があるため、貫通導体１との接続部を除いた周囲を内部絶縁層２０で取り囲むことが重要である。この内部絶縁層２０は貫通絶縁体３と同様の組成とすることが望ましい。また、内部配線１９は貫通金属体５や配線７と同様の組成とすることが望ましい。   For example, as shown in FIGS. 3 and 4, a circuit may be extended in the plane direction inside the light emitting element wiring substrate 13. In this case, since the internal wiring 19 extending in the plane direction inside the light emitting element wiring substrate 13 needs to be insulated from the metal substrate 1, the periphery of the periphery excluding the connecting portion with the through conductor 1 is the internal insulating layer 20. It is important to surround with. It is desirable that the internal insulating layer 20 has the same composition as that of the through insulator 3. Further, it is desirable that the internal wiring 19 has the same composition as the through metal body 5 and the wiring 7.

そして、例えば図３、図４に示すように、以上説明した本発明の発光素子用配線基板１３の搭載部１１に金属や樹脂からなる接続層２１を介して発光素子２３を搭載し、この発光素子２３の端子（図示せず）と、配線７とをワイヤ２５で接続し、発光素子２３と配線７やワイヤ２５をモールド材などの透光性の樹脂２７等で覆うことで、本発明の発光装置２９となる。   For example, as shown in FIGS. 3 and 4, a light emitting element 23 is mounted on the mounting portion 11 of the wiring board 13 for a light emitting element of the present invention described above via a connection layer 21 made of metal or resin. A terminal (not shown) of the element 23 and the wiring 7 are connected by a wire 25, and the light emitting element 23, the wiring 7 and the wire 25 are covered with a light-transmitting resin 27 such as a molding material. The light emitting device 29 is obtained.

この発光素子２３に給電することにより、発光素子２３の放射する光を金属基体１や反射部９に反射させ、光の取り出し効率を高めることができるため、高効率の発光装置２９となる。また、金属基体１並びに反射部９の熱伝導率が高いため、発光素子２３からの発熱を速やかに放出することができ、発熱による輝度低下を抑制でき、また、発光素子２３を反射部９内に搭載することにより保護することもできる。   By supplying power to the light emitting element 23, the light emitted from the light emitting element 23 can be reflected by the metal substrate 1 and the reflecting portion 9, and the light extraction efficiency can be increased. In addition, since the metal substrate 1 and the reflective portion 9 have high thermal conductivity, heat generated from the light emitting element 23 can be quickly emitted, and a decrease in luminance due to heat generation can be suppressed. It can also be protected by mounting on.

なお、図３、図４に示した例では、発光素子２３は、接続層２１により発光素子用配線基板１３に固定され、電力の供給はワイヤ２５によりなされているが、発光素子用配線基板１３との接続形態は、フリップチップ接続であってもよいことはいうまでもない。   In the example shown in FIGS. 3 and 4, the light emitting element 23 is fixed to the light emitting element wiring substrate 13 by the connection layer 21 and the power is supplied by the wire 25, but the light emitting element wiring substrate 13 is used. Needless to say, the connection form may be flip-chip connection.

また、発光素子２３は、モールド材２７により被覆されているが、モールド材２７を用いずに、蓋体（図示せず）を用いて封止してもよく、また、モールド材２７と蓋体とを併用してもよい。蓋体を用いる場合であって、発光素子２３を用いる場合には蓋体は、ガラスなどの透光性の素材を用いることが望ましい。   Further, although the light emitting element 23 is covered with the molding material 27, it may be sealed with a lid (not shown) without using the molding material 27, or the molding material 27 and the lid And may be used in combination. In the case where the lid is used, and the light emitting element 23 is used, it is desirable that the lid is made of a light-transmitting material such as glass.

なお、発光素子２３を搭載する場合には、必要に応じて、このモールド材２７に発光素子２３が放射する光を波長変換するための蛍光体（図示せず）を含有させてもよい。   In addition, when mounting the light emitting element 23, you may make the molding material 27 contain the fluorescent substance (not shown) for wavelength-converting the light which the light emitting element 23 radiates | emits as needed.

また、発光素子２３の熱を金属基体１に効率よく伝達するという観点から、接続層２１として半田、インジウム、ＡｕＳｎ合金などの金属を用いることが望ましい。   Further, from the viewpoint of efficiently transferring the heat of the light emitting element 23 to the metal substrate 1, it is desirable to use a metal such as solder, indium, AuSn alloy as the connection layer 21.

なお、本発明においてもヒートシンクを設けることで、更に放熱性が向上することはもちろんであり、例えば、ヒートシンクのような冷却装置を設けることを排除するものではない。   In the present invention, the heat dissipation is further improved by providing the heat sink. For example, it is not excluded to provide a cooling device such as a heat sink.

以上説明した本発明の発光素子用配線基板１３に発光素子２３を搭載した本発明の発光装置によれば、発光素子２３からの発熱を速やかに装置外に放出することができるため、発熱による輝度低下を抑制できる。   According to the light-emitting device of the present invention in which the light-emitting element 23 is mounted on the light-emitting element wiring substrate 13 of the present invention described above, the heat generated from the light-emitting element 23 can be quickly discharged outside the device, so that the luminance due to the heat generation is increased. Reduction can be suppressed.

次に、本発明における発光素子用配線基板１３の製造方法について、図５を用いて具体的に説明する。   Next, the manufacturing method of the light emitting element wiring board 13 in the present invention will be specifically described with reference to FIGS.

まず、以下に説明するように焼成することによって金属基体１となる金属シート４０と貫通絶縁体３となるセラミックグリーンシート４３および貫通金属体５となる導体ペースト４５を作製する。また、必要に応じセラミックペースト４６を作製する。   First, as described below, by firing, a metal sheet 40 to be the metal substrate 1, a ceramic green sheet 43 to be the through insulator 3, and a conductor paste 45 to be the through metal body 5 are produced. Moreover, the ceramic paste 46 is produced as needed.

金属シート４０は、金属粉末と樹脂と溶剤とを所定の割合で混合して調整した金属スラリーから、従来周知のドクターブレード法などによりシート上に形成される。なお、金属スラリーには必要に応じてセラミック粉末を含有させてもよい。   The metal sheet 40 is formed on a sheet by a conventionally known doctor blade method or the like from a metal slurry prepared by mixing metal powder, resin and solvent at a predetermined ratio. The metal slurry may contain ceramic powder as necessary.

また、セラミックグリーンシート４３も、セラミック粉末、樹脂および溶剤などから形成されるセラミックスラリーからドクターブレード法などによりシート状に形成される。   The ceramic green sheet 43 is also formed into a sheet shape by a doctor blade method or the like from a ceramic slurry formed from ceramic powder, resin, solvent and the like.

金属シート４０並びにセラミックグリーンシート４３に用いるセラミック粉末、金属粉末の粒径は平均粒径で０．０１〜１０μｍ程度のものが好適に用いられ、特に、１〜５μｍの範囲の粉末が取り扱いや焼結性に優れている。   The ceramic powder and metal powder used for the metal sheet 40 and the ceramic green sheet 43 preferably have an average particle diameter of about 0.01 to 10 μm, and in particular, powders in the range of 1 to 5 μm are handled and sintered. Excellent binding.

また、望ましくはＷ、Ｍｏ、ＣｕおよびＡｇのうち少なくとも１種を主成分とする導体ペースト４５を作製する。金属粉末、樹脂および溶剤を所定の割合で混合し、溶剤を減圧過熱等によって除くことにより作製される。また、導体ペーストには必要に応じてセラミック粉末を含有させてもよい。   Desirably, a conductive paste 45 containing at least one of W, Mo, Cu, and Ag as a main component is prepared. The metal powder, resin and solvent are mixed at a predetermined ratio, and the solvent is removed by heating under reduced pressure or the like. Moreover, you may make a conductor paste contain a ceramic powder as needed.

そして、セラミックペーストはセラミック粉末、樹脂および溶剤を混合し、溶剤を除くことによって作製される。   The ceramic paste is prepared by mixing ceramic powder, resin and solvent and removing the solvent.

導体ペーストおよびセラミックペーストに用いる金属粉末、セラミック粉末の粒径は平均粒径で０．０１〜１０μｍ程度のものが好適に用いられ、特に、１〜５μｍの範囲の粉末が取り扱いや焼結性に優れている。   The metal powder used for the conductor paste and the ceramic paste, and the ceramic powder having an average particle diameter of about 0.01 to 10 μm is preferably used. Particularly, powder in the range of 1 to 5 μm is used for handling and sintering. Are better.

まず、図５（ａ）に示すように、例えばセラミックグリーンシート４３にマイクロドリル、レーザー等により直径５０〜２５０μｍのビアホール４７を形成し、図５（ｂ）に示すように、このビアホール４７に導体ペースト４５を印刷等により埋め込んで貫通導体成形体４５ａを形成し、導体埋め込みシート４９を作製する。   First, as shown in FIG. 5A, a via hole 47 having a diameter of 50 to 250 μm is formed in the ceramic green sheet 43 by, for example, a micro drill or a laser, and a conductor is formed in the via hole 47 as shown in FIG. The paste 45 is embedded by printing or the like to form a through conductor molded body 45a, and a conductor embedded sheet 49 is produced.

また、図５（ｃ）に示すように、打ち抜き穴５１を具備する金型５３の上面に、金属シート４０を配置し、図５（ｄ）に示すように、押し金型５５で金属シート４０を打ち抜く。   Further, as shown in FIG. 5C, the metal sheet 40 is disposed on the upper surface of the mold 53 having the punched holes 51, and as shown in FIG. Punch out.

さらに図６（ｅ）に示すように打ち抜いた金属シート４０の上に、予めセラミックグリーンシート４３に導体ペースト４５を埋め込んでおいた導体埋め込みシート４９を配置し、図６（ｆ）に示すように、押し金型５５で導体埋め込みシート４９を打ち抜くと同時に、導体埋め込みシート４９の一部を金属シート４０に形成された穴に挿入する。そして、金属シート４０と導体埋め込みシート４９の不要な部分を除去することにより、図６（ｇ）に示すような焼成後に貫通導体５や貫通絶縁体３および金属基体１となる複合成形体５７を作製することができる。なお、金属シート４０とセラミックグリーンシート４３は略同一厚みであることが望ましい。   Further, on the metal sheet 40 punched out as shown in FIG. 6 (e), a conductor embedded sheet 49 in which the conductor paste 45 is embedded in the ceramic green sheet 43 in advance is arranged, as shown in FIG. 6 (f). The conductor embedding sheet 49 is punched out with the pressing die 55 and at the same time, a part of the conductor embedding sheet 49 is inserted into the hole formed in the metal sheet 40. Then, by removing unnecessary portions of the metal sheet 40 and the conductor-embedded sheet 49, the composite molded body 57 that becomes the through conductor 5, the through insulator 3, and the metal substrate 1 after firing as shown in FIG. Can be produced. It is desirable that the metal sheet 40 and the ceramic green sheet 43 have substantially the same thickness.

そして、例えば、図６（ｈ）に示すように、この複合成形体５７の表面に金属シート４０と接触しないように、また、貫通導体成形体４５ａの端面を覆うように導体ペーストを印刷等により形成することで、焼成後に配線７となる配線成形体５９を形成することができる。また、導体ペーストによって形成された配線成形体５９は、例えば焼成後に接続端子１７や内部配線１９とすることもできることはいうまでもない。   Then, for example, as shown in FIG. 6 (h), a conductor paste is printed or the like so as not to contact the metal sheet 40 on the surface of the composite molded body 57 and to cover the end surface of the through conductor molded body 45a. By forming, the wiring molded body 59 which becomes the wiring 7 after baking can be formed. Needless to say, the wiring molded body 59 formed of the conductive paste can be used as the connection terminals 17 and the internal wirings 19 after firing, for example.

この配線成形体５９は貫通絶縁体３と貫通導体５との境界にクラックや隙間が発生することを抑制するために、セラミックグリーンシート４３と貫通導体成形体４５ａとの境界を覆うように形成することが望ましい。   The wiring molded body 59 is formed so as to cover the boundary between the ceramic green sheet 43 and the through conductor molded body 45a in order to suppress the occurrence of cracks and gaps at the boundary between the through insulator 3 and the through conductor 5. It is desirable.

また、例えば、配線成形体５９を形成する前に、図７（ａ）に示すように図６（ｇ）で作製した複合成形体５７の表面にセラミックペーストを塗布して、焼成後に被覆絶縁層１５となる被覆絶縁層成形体６１を、貫通導体成形体４５ａを露出させるとともに金属シート４０とセラミックグリーンシート４３との境界を覆うように形成することが望ましい。これにより、金属基体１と貫通絶縁体３との境界にクラックや隙間が発生することを抑制することができる。なお、貫通導体成形体４５ａを露出させるためには、被覆絶縁層成形体６１をリング状あるいはドーナツ状に形成すればよい。   Also, for example, before forming the wiring molded body 59, a ceramic paste is applied to the surface of the composite molded body 57 produced in FIG. 6 (g) as shown in FIG. 15 is preferably formed so as to expose the through conductor molded body 45a and to cover the boundary between the metal sheet 40 and the ceramic green sheet 43. Thereby, it can suppress that a crack and a clearance gap generate | occur | produce in the boundary of the metal base | substrate 1 and the penetration insulator 3. FIG. In order to expose the through conductor molded body 45a, the covering insulating layer molded body 61 may be formed in a ring shape or a donut shape.

そして、さらに図７（ｂ）に示すように、貫通導体成形体４５ａと接続させ、金属シート４０と接続しないように配線成形体５９を形成することで、被覆絶縁層成形体６１と配線成形体５９とを備えた複合成形体５７を作製することができる。   Further, as shown in FIG. 7 (b), by forming the wiring molded body 59 so as to be connected to the through conductor molded body 45a and not to be connected to the metal sheet 40, the covering insulating layer molded body 61 and the wiring molded body are formed. The composite molded body 57 provided with 59 can be manufactured.

なお、例えば配線成形体５９や被覆絶縁層成形体６１を備えた複数の複合成形体５７を積層した場合には配線成形体５９は焼成後に内層配線１９となる場合があり、また、被覆絶縁層成形体６１は焼成後に内部絶縁層２０となる場合がある。   For example, when a plurality of composite molded bodies 57 including the wiring molded body 59 and the coating insulating layer molded body 61 are laminated, the wiring molded body 59 may become the inner wiring 19 after firing, and the coating insulating layer The molded body 61 may become the internal insulating layer 20 after firing.

次に突起部３０の形成方法について説明する。まず、金属シート４０の所定の位置を所望の金型を用いて打ち抜き、焼成後に突起部３０となる突起部成形体６３を作製する。このときダイスの内径とピンの外形との比率を変化させることにより突起部３０の角度を任意に設定でき、例えばピンの外径よりもダイスの内径が０．０５〜１ｍｍ程度大きな打ち抜き金型を用いて金属シート４０を打ち抜き加工して作製することができる。   Next, a method for forming the protrusion 30 will be described. First, a predetermined position of the metal sheet 40 is punched out using a desired mold, and a protrusion molded body 63 that becomes the protrusion 30 after firing is produced. At this time, the angle of the protrusion 30 can be arbitrarily set by changing the ratio of the inner diameter of the die to the outer shape of the pin. For example, a punching die having an inner diameter of the die of about 0.05 to 1 mm larger than the outer diameter of the pin is used. The metal sheet 40 can be punched out and used.

そして、この突起部３０となる突起部成形体６３を金属シート４０に積層することで、図８に示すような焼成後に突起部３０となる突起部成形体６３を備えた突起付複合成形体６７を得ることができる。   Then, by projecting the protrusion molded body 63 to be the protrusion 30 on the metal sheet 40, the composite molded body with protrusion 67 having the protrusion molded body 63 to be the protrusion 30 after firing as shown in FIG. Can be obtained.

以下に反射部９の形成方法について説明する。まず、図９（ａ）に示すように、金属シート４０に貫通孔７１を形成し、焼成後に反射部１１となる反射部成形体７１を作製し、図９（ｂ）に示すように、この反射部成形体７３と図６（ｈ）や図７（ｂ）に示す複合成形体５７とを積層し、焼成することで本発明の発光素子用配線基板１３を容易に作製することができる。   Below, the formation method of the reflection part 9 is demonstrated. First, as shown in FIG. 9 (a), a through hole 71 is formed in the metal sheet 40, and a reflecting portion molded body 71 which becomes the reflecting portion 11 after firing is produced. As shown in FIG. The light emitting element wiring board 13 of the present invention can be easily manufactured by laminating the reflective molded body 73 and the composite molded body 57 shown in FIG. 6H or FIG.

また、あるいは反射部成形体７３と図６（ｇ）や図６（ｈ）および図７（ａ）に示す複合成形体５７とを積層した後で焼成することで所望の配線回路を備えた本発明の発光素子用配線基板１３を容易に作製することができる。   Alternatively, the reflective part molded body 73 and the composite molded body 57 shown in FIG. 6 (g), FIG. 6 (h) and FIG. 7 (a) are laminated and fired and then provided with a desired wiring circuit. The wiring board 13 for light emitting elements of the invention can be easily produced.

なお、図５〜図７で示した図は貫通導体５を形成する部分の要部拡大図であり、図５〜図７で示した貫通導体成形体４５ａは金属シート４０に複数形成してもよいことはいうまでもない。   5 to 7 are enlarged views of the main part of the portion where the through conductor 5 is formed, and a plurality of through conductor molded bodies 45a shown in FIGS. 5 to 7 may be formed on the metal sheet 40. Needless to say, it is good.

なお、反射部９の表面９ａは、図１（ａ）に示すように金属基体に対して垂直に配設されていてもよいし、図２のように傾斜を有するように配設されてもよい。反射部表面９ａが垂直な反射部９は、通常の金型で打ち抜いて作製すればよく、また、反射部表面９ａが傾斜を有する反射部９は、例えばパンチの外径よりもダイスの内径が０．０５〜１ｍｍ程度大きな打ち抜き金型を用いて金属シート４０を打ち抜き加工して作製することができる。   The surface 9a of the reflecting portion 9 may be arranged perpendicular to the metal substrate as shown in FIG. 1A, or may be arranged so as to have an inclination as shown in FIG. Good. The reflecting portion 9 having a vertical reflecting portion surface 9a may be produced by punching with a normal mold. The reflecting portion 9 having the inclined reflecting portion surface 9a has, for example, an inner diameter of a die rather than an outer diameter of a punch. The metal sheet 40 can be punched using a punching die having a size of about 0.05 to 1 mm.

なお、貫通絶縁体３や貫通導体５の形状は、四角や角柱形状でも良いし、その他円形あるいは円柱形状など所望の形状にすることが可能である。   The shape of the through insulator 3 and the through conductor 5 may be a square shape or a prism shape, or may be a desired shape such as a circular shape or a cylindrical shape.

また、配線成形体５９は、薄膜法により形成したり、金属箔を成形体の表面に転写するなどして形成できることはいうまでもない。   Needless to say, the wiring molded body 59 can be formed by a thin film method or by transferring a metal foil onto the surface of the molded body.

純度９９％以上、平均粒径２．０μｍのＷ、Ｍｏ、およびＣｕを表１に示す割合で混合し、さらに成形用有機樹脂（バインダ）としてアクリル系バインダと、トルエンを溶媒として添加し、金属シートとなるスラリーを調整した。しかる後に、ドクターブレード法にて金属シートを作製した。   W, Mo, and Cu having a purity of 99% or more and an average particle size of 2.0 μm are mixed at a ratio shown in Table 1, and an acrylic binder and toluene as a solvent are added as a molding organic resin (binder). A slurry to be a sheet was prepared. Thereafter, a metal sheet was produced by a doctor blade method.

また、純度９９％以上、平均粒子径２μｍのＷ粉末７０質量％および純度９９％以上、平均粒子径２μｍのＣｕ粉末３０質量％にアクリル系バインダおよび溶媒としてアセトンを混合したのち、減圧過熱によりアセトンを取り除いて導体ペーストを作製した。   Further, after mixing acetone as an acrylic binder and a solvent with 70% by mass of W powder having a purity of 99% or more and an average particle size of 2 μm and 30% by mass of Cu powder having a purity of 99% or more and an average particle size of 2 μm, acetone is removed by overheating under reduced pressure. Was removed to produce a conductor paste.

また、原料粉末として純度９９％以上、平均粒径が１．５μｍのＡｌ２Ｏ３粉末を９０質量％と、純度９９％以上、平均粒子径１．３μｍのＭｎ２Ｏ３粉末を５質量％と、純度９９％以上、平均粒径１．０μｍのＳｉＯ２粉末を５質量％の割合で混合して、金属シートと同様に、アクリル系バインダとトルエンを混合し、スラリーを調整した。しかる後に、ドクターブレード法にてＡｌ２Ｏ３を主成分とし、金属シートと略同一厚みのセラミックグリーンシートを作製した。 Moreover, 90% by mass of Al 2 O 3 powder having a purity of 99% or more and an average particle diameter of 1.5 μm as raw material powder, and 5% by mass of Mn 2 O 3 powder having a purity of 99% or more and an average particle diameter of 1.3 μm. Then, an SiO 2 powder having a purity of 99% or more and an average particle diameter of 1.0 μm was mixed at a ratio of 5 mass%, and an acrylic binder and toluene were mixed in the same manner as the metal sheet to prepare a slurry. Thereafter, a ceramic green sheet having Al 2 O 3 as a main component and substantially the same thickness as the metal sheet was produced by a doctor blade method.

また、セラミックグリーンシートと同様の比率でＡｌ２Ｏ３粉末とＭｎ２Ｏ３粉末とＳｉＯ２粉末とを混合し、これにアクリル系バインダおよびアセトンを添加し、その後減圧過熱することにより溶剤を除き、セラミックペーストを作製した。 Also, Al 2 O 3 powder, Mn 2 O 3 powder and SiO 2 powder are mixed at the same ratio as the ceramic green sheet, and an acrylic binder and acetone are added thereto, and then the solvent is removed by heating under reduced pressure. A ceramic paste was prepared.

次に、上記のセラミックグリーンシートに対して、打ち抜き加工を施し、直径が２００μｍのビアホールを形成し、このビアホール内に、導体ペーストをスクリーン印刷法によって充填し、導体埋め込みシートを作製した。   Next, the ceramic green sheet was punched to form a via hole having a diameter of 200 μm, and a conductor paste was filled in the via hole by a screen printing method to produce a conductor embedded sheet.

そして、金属シートの所定箇所に貫通孔を形成し、金属シートにおける貫通孔形成部分を導体埋め込みシートから押圧することによって、導体埋め込みシートの一部を貫通孔内に嵌め込み、金属シートと導体埋め込みシートとを一体化し、複合成形体を形成した。   Then, a through hole is formed at a predetermined position of the metal sheet, and a part of the conductor embedded sheet is fitted into the through hole by pressing a through hole forming portion of the metal sheet from the conductor embedded sheet. And a composite molded body was formed.

そして、セラミックペーストを用いてスクリーン印刷により複合成形体の主面側、および対向面側に、金属シートとセラミックグリーンシートとの境界を覆うように被覆絶縁層成形体をリング状に形成した。なお、このとき複合成形体に設けられたビアホールに充填された貫通導体となる導体ペーストが露出するようにした。さらに、貫通導体成形体を覆うように、被覆絶縁層成形体上に、導体ペーストを印刷塗布し、焼成後に配線および接続端子となるように配線成形体を形成した。   Then, a covering insulating layer formed body was formed in a ring shape so as to cover the boundary between the metal sheet and the ceramic green sheet on the main surface side and the opposite surface side of the composite formed body by screen printing using ceramic paste. At this time, the conductor paste serving as a through conductor filled in the via hole provided in the composite molded body was exposed. Further, a conductor paste was printed and applied on the covering insulating layer molded body so as to cover the through conductor molded body, and a wiring molded body was formed so as to become a wiring and a connection terminal after firing.

このようにして被覆絶縁層成形体および配線成形体を備えた複合成形体を組み合わせ、位置合わせし、積層圧着して積層体を作製した。   Thus, the composite molded body provided with the covering insulating layer molded body and the wiring molded body was combined, aligned, and laminated and pressure-bonded to produce a laminated body.

さらに、パンチの外径よりもダイスの内径が大きな打ち抜き金型を用いて金属シートに傾斜を有する貫通孔を形成した。これを金属基体の主面上に位置するように積層体上に積層して焼成後に反射部となる金属シートを形成した。これにより、焼成後の寸法が５ｍｍ×５ｍｍ×１ｍｍとなる発光素子用配線基板の成形体を得た。なお、発光素子用配線基板のうち、反射部は外形５ｍｍ×５ｍｍ×０．４ｍｍ、搭載部１１側の内径φ３．０ｍｍ、逆側の内径３．２ｍｍである。   Furthermore, a through-hole having an inclination was formed in the metal sheet using a punching die having an inner diameter of the die larger than the outer diameter of the punch. This was laminated | stacked on the laminated body so that it might be located on the main surface of a metal base | substrate, and the metal sheet used as a reflection part after baking was formed. Thereby, the molded object of the wiring board for light emitting elements whose dimension after baking becomes 5 mm x 5 mm x 1 mm was obtained. Of the light emitting element wiring board, the reflecting portion has an outer shape of 5 mm × 5 mm × 0.4 mm, an inner diameter φ3.0 mm on the mounting portion 11 side, and an inner diameter of 3.2 mm on the opposite side.

そして、露点＋２５℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、露点＋２５℃の窒素水素混合雰囲気にて１３００℃の最高温度で２時間焼成した。   Then, after degreasing in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C., it was subsequently baked at a maximum temperature of 1300 ° C. for 2 hours in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C.

こうして、図２に示すような発光素子用配線基板を作製した。なお、本実施例においては、いずれも３層の金属シートの積層体により、発光素子用配線基板を作製し、これらの金属シートのうち一層を反射部とした。   Thus, a wiring board for a light emitting element as shown in FIG. 2 was produced. Note that in this example, a light emitting element wiring board was prepared using a laminate of three metal sheets, and one of these metal sheets was used as a reflective portion.

また、比較例として基体がセラミックスからなる試料を以下のようにして作製した。上記のセラミックグリーンシートに対して、打ち抜き加工を施し、直径が２００μｍのビアホールを形成し、このビアホール内に、導体ペーストをスクリーン印刷法によって充填するとともに、配線パターン状に印刷塗布した。次いで、金属層となる導体ペーストを塗布されたセラミックシートを組み合わせ、位置合わせし、積層圧着し、焼成後に外形５ｍｍ×５ｍｍ×厚み０．６ｍｍとなる積層体を作製した。   Further, as a comparative example, a sample whose base was made of ceramics was produced as follows. The ceramic green sheet was punched to form a via hole having a diameter of 200 μm. The via hole was filled with a conductive paste by a screen printing method and printed and applied in a wiring pattern. Next, a ceramic sheet coated with a conductive paste to be a metal layer was combined, aligned, laminated and pressure-bonded, and a laminate having an outer shape of 5 mm × 5 mm × thickness 0.6 mm after firing was produced.

そして、反射部をセラミックグリーンシートにより形成する試料については、絶縁基体と反射部とをセラミックシートにて一体物として形成した。その後、露点＋２５℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、露点＋２５℃の窒素水素混合雰囲気にて１３００℃の最高温度で２時間焼成した。   And about the sample which forms a reflective part with a ceramic green sheet, the insulating base | substrate and the reflective part were formed as an integrated object with the ceramic sheet. Thereafter, degreasing was performed in a nitrogen-hydrogen mixed atmosphere having a dew point of + 25 ° C., followed by baking for 2 hours at a maximum temperature of 1300 ° C. in a nitrogen-hydrogen mixed atmosphere having a dew point of + 25 ° C.

また、金属製の反射部としては、Ａｌ製の金属枠体を用いた。接続端子並びに外部電極端子を形成する導体ペーストを用いて、絶縁基体の搭載部側の反射部が搭載される部分に金属層を形成したのち、共晶Ａｇ−Ｃｕのロウ材を用いて、８５０℃の条件で、反射部を絶縁基体に接合して作製した。   In addition, an Al metal frame was used as the metal reflecting portion. After forming a metal layer on the portion where the reflection portion on the mounting portion side of the insulating base is mounted using a conductive paste that forms the connection terminal and the external electrode terminal, using a eutectic Ag—Cu brazing material 850 The reflecting part was bonded to an insulating substrate under the condition of ° C.

その後、接続端子並びに外部電極端子の表面にＮｉ、ＡｕおよびＡｇめっきを順次施した。   Thereafter, Ni, Au and Ag plating were sequentially applied to the surfaces of the connection terminal and the external electrode terminal.

これらの発光素子用配線基板に接着剤として半田を用いて出力１．５Ｗの発光素子である□１ｍｍのＬＥＤ素子を搭載部に実装し、ボンディングワイヤによりＬＥＤ素子と接続端子とを結線し、さらに、ＬＥＤ素子と接続端子とをエポキシ樹脂からなるモールド材で覆い、発光装置を得た。   A LED element of 1 mm, which is a light emitting element with an output of 1.5 W, is mounted on the mounting portion using solder as an adhesive on the wiring board for these light emitting elements, and the LED element and the connection terminal are connected by a bonding wire. The LED element and the connection terminal were covered with a molding material made of epoxy resin to obtain a light emitting device.

得られた発光装置に０．４Ａの電流を通電し、全放射束測定を行った。   A current of 0.4 A was applied to the obtained light emitting device, and total radiant flux measurement was performed.

また、金属基体および絶縁基体の熱伝導率は、それぞれを個別に形成した試料を用いてレーザーフラッシュ法により測定した。   Further, the thermal conductivity of the metal substrate and the insulating substrate was measured by a laser flash method using samples formed individually.

以上の工程により作製した発光素子用配線基板の特性と、試験結果を表２に示す。

Figure 2008085282
Table 2 shows the characteristics and test results of the light-emitting element wiring substrate manufactured through the above steps.
Figure 2008085282

Figure 2008085282
Figure 2008085282

表２に示すように、本発明の範囲外である試料Ｎｏ．１は、基体、反射部ともに金属ではなく、セラミックスからなるために、放熱性が劣り、全放射束が１５０ｍｗと低くなった。   As shown in Table 2, Sample No. which is outside the scope of the present invention. In No. 1, since both the base and the reflection part are made of ceramics instead of metal, heat dissipation is inferior and the total radiant flux is as low as 150 mw.

また、本発明の範囲外であるセラミックスからなる基体にＡｌ製の反射部を設けた試料Ｎｏ．２は、試料Ｎｏ．１よりも放熱性が改善されたものの、全放射束は１８０ｍＷであった。   Further, sample No. 1 in which an Al reflecting portion is provided on a base made of ceramics that is outside the scope of the present invention. 2 is Sample No. Although the heat dissipation was improved more than 1, the total radiant flux was 180 mW.

一方、本発明の試料Ｎｏ．３、４、５は基体、反射部ともに焼結金属から成り、熱伝導率が高いために高い全放射束を示した。基体および反射部にＣｕ／Ｗ＝３０／７０（質量％）を用いたＮｏ．３は全放射側が２５０ｍＷとＮｏ．１、２と比べて大きく向上し、さらに反射部にＣｕ／Ｗ＝５０／５０（質量％）を用いたＮｏ．４は２８０ｍＷと全放射側が大きな値を示した。また、ＷではなくＭｏを用いたＮｏ．５は、Ｗを用いたＮｏ．３と比較してやや熱伝導率が低下するため、２３０ｍＷの全放射束が得られた。   On the other hand, sample no. Nos. 3, 4, and 5 were made of sintered metal for both the base and the reflective part, and showed high total radiant flux due to high thermal conductivity. No. using Cu / W = 30/70 (mass%) for the substrate and the reflection part. No. 3 is 250 mW on the total radiation side. No. 1 and 2 using Cu / W = 50/50 (mass%) for the reflection part. No. 4 showed a large value of 280 mW on the entire radiation side. No. using Mo instead of W. No. 5 uses W. Since the thermal conductivity is slightly lower than that of 3, a total radiant flux of 230 mW was obtained.

本発明の発光素子用配線基板の断面図である。It is sectional drawing of the wiring board for light emitting elements of this invention. 突起部を設けた本発明の発光素子用配線基板の断面図である。It is sectional drawing of the wiring board for light emitting elements of this invention which provided the projection part. 本発明の発光装置の断面図である。It is sectional drawing of the light-emitting device of this invention. 突起部を設けた本発明の発光装置の断面図である。It is sectional drawing of the light-emitting device of this invention which provided the projection part. 本発明の発光素子用配線基板の製造方法を説明するための要部拡大断面図である。It is a principal part expanded sectional view for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための要部拡大断面図である。It is a principal part expanded sectional view for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための要部拡大断面図である。It is a principal part expanded sectional view for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための要部拡大断面図である。It is a principal part expanded sectional view for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の平面図である。It is a top view of the wiring board for light emitting elements of this invention.

符号の説明Explanation of symbols

１・・・金属基体
３・・・貫通絶縁体
５・・・貫通導体
７・・・配線
９・・・反射部
９ａ・・・反射部の内壁面
１１・・・搭載部
１３・・・発光素子用配線基板
１５・・・被覆絶縁層
１６ａ・・・凸部
１６ｂ・・・絶縁体
１７・・・接続端子
１９・・・内部配線
２０・・・内部絶縁層
２１・・・接続層
２３・・・発光素子
２５・・・ワイヤ
２９・・・発光装置
３０・・・突起部
３０ａ・・・突起部の上面
３０ｂ・・・突起部の側面 DESCRIPTION OF SYMBOLS 1 ... Metal substrate 3 ... Through insulator 5 ... Through conductor 7 ... Wiring 9 ... Reflection part 9a ... Inner wall surface 11 of reflection part ... Mounting part 13 ... Light emission Device wiring board 15 ... covering insulating layer 16a ... convex portion 16b ... insulator 17 ... connecting terminal 19 ... internal wiring 20 ... inner insulating layer 21 ... connecting layer 23. ..Light emitting element 25... Wire 29... Light emitting device 30... Projection 30 a.

Claims (11)

焼結金属からなる平板状の金属基体と、該金属基体の一方の主面に形成された発光素子を搭載する搭載部と、前記金属基体を貫通するセラミックスからなる貫通絶縁体と、前記金属基体と電気的に絶縁されるとともに前記貫通絶縁体の内側を貫通する貫通導体と、前記貫通導体と電気的に接続されるとともに前記金属基体と絶縁され前記搭載部の周囲に設けられた配線と、前記搭載部と前記配線とを取り囲むように形成された焼結金属からなる反射部とを備えるとともに、前記金属基体と前記貫通絶縁体と前記貫通導体と前記配線と前記反射部とが同時焼成されてなることを特徴とする発光素子用配線基板。 A flat metal base made of sintered metal, a mounting portion for mounting a light emitting element formed on one main surface of the metal base, a through insulator made of ceramics penetrating the metal base, and the metal base A through-conductor that is electrically insulated and penetrates the inside of the through-insulator, and a wiring that is electrically connected to the through-conductor and insulated from the metal base and provided around the mounting portion, A reflective portion made of sintered metal formed so as to surround the mounting portion and the wiring, and the metal base, the through insulator, the through conductor, the wiring, and the reflective portion are simultaneously fired. A wiring board for a light-emitting element. 前記搭載部の周囲に、該搭載部に沿って凸部が設けられていることを特徴とする請求項１に記載の発光素子用配線基板。 The light emitting element wiring board according to claim 1, wherein a convex portion is provided around the mounting portion along the mounting portion. 前記搭載部の周囲に、該搭載部を取り囲むように絶縁体が設けられていることを特徴とする請求項１または２に記載の発光素子用配線基板。 The light-emitting element wiring board according to claim 1, wherein an insulator is provided around the mounting portion so as to surround the mounting portion. 前記搭載部を備えた前記金属基体の一方の主面が突起状に形成され、突起状の突起部の上面に前記搭載部が形成されていることを特徴とする請求項１乃至３のいずれかに記載の発光素子用配線基板。 One of the main surfaces of the said metal base | substrate provided with the said mounting part is formed in protrusion shape, The said mounting part is formed in the upper surface of a protrusion-like protrusion part, The one of Claim 1 thru | or 3 characterized by the above-mentioned. The wiring board for light emitting elements as described in 2. 上方から見た前記突起部の断面積が上側で小さくなるように形成されていることを特徴とする請求項４に記載の発光素子用配線基板。 The wiring board for a light-emitting element according to claim 4, wherein a cross-sectional area of the protrusion as viewed from above is formed to be small on the upper side. 前記反射部の高さが前記突起部の高さよりも高いことを特徴とする請求項４または５に記載の発光素子用配線基板。 The wiring board for a light-emitting element according to claim 4, wherein a height of the reflecting portion is higher than a height of the protruding portion. 前記金属基体の前記搭載部が形成された側の主面にＡｇめっきが施されていることを特徴とする請求項１乃至６のうちいずれかに記載の発光素子用配線基板。 7. The wiring board for a light emitting element according to claim 1, wherein Ag plating is performed on a main surface of the metal base on which the mounting portion is formed. 前記金属基体の熱伝導率が１５０Ｗ／（ｍ・Ｋ）以上であることを特徴とする請求項１乃至７のうちいずれかに記載の発光素子用配線基板。 The wiring board for a light-emitting element according to claim 1, wherein the metal base has a thermal conductivity of 150 W / (m · K) or more. 前記金属基体がＷ、ＭｏおよびＣｕのうち、少なくとも１種を主成分とすることを特徴とする請求項１乃至８のうちいずれかに記載の発光素子用配線基板。 The wiring board for a light emitting element according to any one of claims 1 to 8, wherein the metal base includes at least one of W, Mo, and Cu as a main component. 前記反射部が前記金属基体と同じ組成からなることを特徴とする請求項１乃至９のうちいずれかに記載の発光素子用配線基板。 The light emitting element wiring board according to claim 1, wherein the reflecting portion has the same composition as the metal base. 請求項１乃至１０のうちいずれかに記載の発光素子用配線基板の前記搭載部に発光素子を搭載してなることを特徴とする発光装置。

A light emitting device comprising a light emitting element mounted on the mounting portion of the light emitting element wiring board according to claim 1.

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WO2009130743A1 (en) * 2008-04-25 2009-10-29 パナソニック株式会社 Optical element package, semiconductor light-emitting device, and lighting device
JP2011258606A (en) * 2010-06-04 2011-12-22 Mitsubishi Chemicals Corp Led light emitting element and led light emitting device
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CN112753143A (en) * 2018-09-28 2021-05-04 京瓷株式会社 Substrate for mounting light emitting element, array substrate, and light emitting device

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JP2011258606A (en) * 2010-06-04 2011-12-22 Mitsubishi Chemicals Corp Led light emitting element and led light emitting device
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