JP2001144333A - Light-emitting device and manufacturing method therefor - Google Patents
Light-emitting device and manufacturing method thereforInfo
- Publication number
- JP2001144333A JP2001144333A JP32009899A JP32009899A JP2001144333A JP 2001144333 A JP2001144333 A JP 2001144333A JP 32009899 A JP32009899 A JP 32009899A JP 32009899 A JP32009899 A JP 32009899A JP 2001144333 A JP2001144333 A JP 2001144333A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- peripheral wall
- emitting device
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は発光装置とその製
造方法に関し、主に発光源として発光ダイオードチップ
を内部に備えた発光装置に関するものであり、各種表示
パネルの光源、液晶のバックライト、携帯機器の表示用
光源、照明スイッチ用光源、ＯＡ機器用光源等に使用さ
れるものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting device and a method of manufacturing the same, and more particularly to a light-emitting device having a light-emitting diode chip as a light-emitting source. It is used as a display light source for equipment, a light source for lighting switches, a light source for OA equipment, and the like.
【０００２】[0002]
【従来の技術】従来の発光装置としては、電極パターン
が形成された平板状の基板に発光ダイオードチップを搭
載し、発光ダイオードチップと電極パターンを金属細線
で接続（ワイヤボンディング）した後、透光性の樹脂で
発光ダイオードチップの周囲を封止したものが一般に知
られている。2. Description of the Related Art As a conventional light emitting device, a light emitting diode chip is mounted on a plate-like substrate on which an electrode pattern is formed, and the light emitting diode chip and the electrode pattern are connected by a thin metal wire (wire bonding), and then light is transmitted. It is generally known that the periphery of a light emitting diode chip is sealed with a resin.
【０００３】しかし、このような従来の発光装置では、
発光ダイオードチップの出射光が発光装置の前方だけで
なく横方向にも出射されてしまう。このため、発光装置
から出射される光の利用度（以下、この明細書において
出射光利用効率と称する）に無駄があった。However, in such a conventional light emitting device,
The light emitted from the light emitting diode chip is emitted not only in front of the light emitting device but also in the lateral direction. For this reason, there is waste in the utilization of light emitted from the light emitting device (hereinafter, referred to as emission light utilization efficiency in this specification).
【０００４】このような問題を解決した発光装置とし
て、基板の一部に凹部を形成し、凹部の底に発光ダイオ
ードチップを搭載した発光装置（以下、この明細書にお
いて凹型発光装置と称する）が知られている（例えば特
開平７−３８１５４号参照）。このような凹型発光装置
では、凹部を含めた基板上に立体的に電極パターンを形
成し、この電極パターンと発光ダイオードチップとを金
属細線で接続（ワイヤボンディング）することにより電
気的な接続が図られている。As a light emitting device which has solved such a problem, a light emitting device in which a concave portion is formed in a part of a substrate and a light emitting diode chip is mounted on the bottom of the concave portion (hereinafter, referred to as a concave light emitting device in this specification). It is known (for example, see Japanese Patent Application Laid-Open No. 7-38154). In such a concave light emitting device, an electrode pattern is formed three-dimensionally on the substrate including the concave portion, and the electrode pattern is connected to the light emitting diode chip by a thin metal wire (wire bonding) to achieve electrical connection. Have been.
【０００５】凹型発光装置では、凹部が横方向への出射
光を遮るので前方にのみ光が出射されることになり、従
来の発光装置と比較した場合、出射光利用効率が向上し
ている。また、凹型発光装置によっては、凹部の側面や
底面に形成された電極パターンが反射板の役割も兼ねる
ので、出射光利用効率はさらに向上している。In the concave type light emitting device, the concave portion blocks the light emitted in the lateral direction, so that the light is emitted only forward, and the efficiency of using the emitted light is improved as compared with the conventional light emitting device. In some concave light emitting devices, the electrode pattern formed on the side surface or bottom surface of the concave portion also serves as a reflector, so that the efficiency of using emitted light is further improved.
【０００６】[0006]
【発明が解決しようとする課題】しかし、凹型発光装置
では、凹部が形成された立体的な基板上に導電性金属の
メッキを施して立体的な電極パターン（立体配線）を形
成するので、電極パターン表面に凹凸や荒れが生じやす
かった。このため、金属細線を電極パターンにワイヤボ
ンディングする際に確実なワイヤボンディングを行えな
いことがあった。However, in the concave light emitting device, a three-dimensional electrode pattern (three-dimensional wiring) is formed by plating a conductive metal on a three-dimensional substrate having a concave portion. Irregularities and roughness were easily generated on the pattern surface. For this reason, when performing the wire bonding of the thin metal wire to the electrode pattern, reliable wire bonding may not be performed.
【０００７】この発明は以上のような事情を考慮してな
されたものであり、平板状の基板に電極パターンを形成
することにより、金属細線と電極パターンをワイヤボン
ディングによって接続する際の確実性及び信頼性を高め
つつ、出射光利用効率を向上させた発光装置とその製造
方法を提供するものである。The present invention has been made in view of the above circumstances, and by forming an electrode pattern on a flat substrate, it is possible to improve the reliability and the reliability of connecting the thin metal wire and the electrode pattern by wire bonding. It is an object of the present invention to provide a light emitting device with improved outgoing light utilization efficiency while improving reliability and a method of manufacturing the same.
【０００８】[0008]
【課題を解決するための手段】この発明は、平板状の基
板と、基板上に形成される第１および第２パターンと、
発光ダイオードチップと、第１及び第２パターン上に形
成される絶縁層と、周壁体と、周壁体の内側側面に形成
される金属反射層とを備え、発光ダイオードチップは基
板上に搭載されるとともに第１および第２パターンと電
気的に接続され、周壁体はその金属反射層が発光ダイオ
ードチップを囲うように絶縁層を介して基板上に設けら
れ、周壁体の内側には透光性樹脂が充填されている発光
装置を提供するものである。According to the present invention, a flat substrate, first and second patterns formed on the substrate,
A light emitting diode chip, an insulating layer formed on the first and second patterns, a peripheral wall, and a metal reflective layer formed on an inner side surface of the peripheral wall; the light emitting diode chip is mounted on a substrate; The peripheral wall is electrically connected to the first and second patterns, and the peripheral wall is provided on the substrate via an insulating layer so that the metal reflection layer surrounds the light emitting diode chip. Is provided.
【０００９】[0009]
【発明の実施の形態】この発明の基板には例えば、厚さ
が０．８〜３．２ｍｍの平板状でフェノール樹脂やエポ
キシ樹脂などの熱硬化性樹脂と、紙、ガラス、布などの
基材とを構成材料とした積層板上に銅箔を張り合わせた
もの（銅張積層板）を用いることができる。また基板上
に形成される第１および第２パターンは、基板に上記銅
張積層板を用いる場合にはフォトエッチング法などによ
り形成される。また、銅張りでない基板（絶縁基板）上
に無電解メッキにより必要な第１および第２パターンだ
けを形成するようにしてもよい。BEST MODE FOR CARRYING OUT THE INVENTION A substrate of the present invention is, for example, a flat plate having a thickness of 0.8 to 3.2 mm and a thermosetting resin such as a phenol resin or an epoxy resin, and a base material such as paper, glass or cloth. A material obtained by laminating a copper foil on a laminate made of a material (copper-clad laminate) can be used. The first and second patterns formed on the substrate are formed by a photo-etching method or the like when the copper-clad laminate is used for the substrate. Alternatively, only the necessary first and second patterns may be formed by electroless plating on a substrate (insulating substrate) that is not copper-clad.
【００１０】この発明の絶縁層は樹脂製の接着シートで
あってもよい。なお、樹脂製接着シートの具体例として
は、エポキシ樹脂製接着シート、ポリイミド樹脂製接着
シートを挙げることができる。しかし、この発明の絶縁
層は、上記の樹脂製接着シート以外でもよく、例えば、
シリコン酸化膜、シリコン窒化膜等の絶縁膜でもよい
し、エポキシ樹脂、ポリイミド樹脂等の絶縁性を有する
樹脂をそのまま用いてもよい。The insulating layer of the present invention may be a resin adhesive sheet. Specific examples of the resin adhesive sheet include an epoxy resin adhesive sheet and a polyimide resin adhesive sheet. However, the insulating layer of the present invention may be other than the above resin adhesive sheet, for example,
An insulating film such as a silicon oxide film or a silicon nitride film may be used, or an insulating resin such as an epoxy resin or a polyimide resin may be used as it is.
【００１１】絶縁層に樹脂製の接着シートを用いた場合
は、絶縁層の上に周壁体を載せて密着させるだけで周壁
体の設置が行えるが、絶縁層に上記の絶縁膜や接着性を
備えない樹脂を用いた場合は別途、エポキシ樹脂系接着
剤やポリイミド樹脂系接着剤等を周壁体と絶縁層との接
合面に塗布して接合する必要がある。When a resin adhesive sheet is used for the insulating layer, the peripheral wall can be installed only by placing the peripheral wall on the insulating layer and closely contacting it. When a resin not provided is used, it is necessary to separately apply an epoxy resin-based adhesive, a polyimide resin-based adhesive, or the like to the joint surface between the peripheral wall body and the insulating layer and join them.
【００１２】この発明の周壁体にはガラスエポキシ樹
脂、フェノール樹脂、ポリイミド樹脂、セラミック等で
成形されたものを用いることができる。また、周壁体の
内側側面に形成される金属反射層の材料としては、金、
銅、ニッケル、アルミウム、銀等を挙げることができる
が、中でも、アルミニウム、銀は反射効率が高いのでこ
の発明の発光装置の金属反射層の材料として好適であ
る。上記金属材料を周壁体の内側側面に形成する方法と
しては、無電解メッキ法、フォトエッチング法等を挙げ
ることができる。The peripheral wall of the present invention may be formed of glass epoxy resin, phenol resin, polyimide resin, ceramic or the like. Further, as a material of the metal reflection layer formed on the inner side surface of the peripheral wall body, gold,
Copper, nickel, aluminum, silver, and the like can be given. Among them, aluminum and silver are preferable as the material of the metal reflection layer of the light emitting device of the present invention because of their high reflection efficiency. Examples of a method for forming the metal material on the inner side surface of the peripheral wall include an electroless plating method and a photoetching method.
【００１３】また、周壁体は内側側面が発光ダイオード
チップの出射光の出射方向に末広がりとなるように傾斜
していてもよい。つまり、周壁体の内側側面を発光装置
の所望の出射方向に対して末広がりに傾斜させることに
より、発光ダイオードチップからの出射光をより高い効
率で反射させて発光装置の所望の出射方向へ向けること
ができるようになる。これにより、発光装置の出射光利
用効率が向上する。The peripheral wall may be inclined such that the inner side surface is divergent in the emission direction of the light emitted from the light emitting diode chip. That is, by inclining the inner side surface of the peripheral wall so as to be divergent with respect to the desired emission direction of the light emitting device, the light emitted from the light emitting diode chip is reflected with higher efficiency and directed to the desired emission direction of the light emitting device. Will be able to Thereby, the efficiency of use of the emitted light of the light emitting device is improved.
【００１４】また、周壁体は黒色であってもよい。周壁
体を黒色にすると発光装置の発光箇所を際立たせること
ができるので、特に発光装置を複数並べて使用する表示
機器（例えば電光表示板）等において、表示機器全体の
コントラストを向上させることができる。[0014] The peripheral wall may be black. When the peripheral wall is made black, the light-emitting portion of the light-emitting device can be emphasized, so that the contrast of the entire display device can be improved, particularly in a display device (for example, an electric display panel) using a plurality of light-emitting devices arranged side by side.
【００１５】この発明の発光ダイオードチップには、ガ
リウムヒ素を材料とした赤外色発光ダイオード、ガリウ
ム・アルミニウムヒ素を材料とした赤色発光ダイオー
ド、ガリウムヒ素燐を材料とした橙又は黄色発光ダイオ
ード、ガリウム燐に窒素をドープした黄緑色発光ダイオ
ード、窒化ガリウムを材料とした青色発光ダイオード等
のチップを用いることができる。The light emitting diode chip of the present invention includes an infrared light emitting diode made of gallium arsenide, a red light emitting diode made of gallium aluminum arsenide, an orange or yellow light emitting diode made of gallium arsenide phosphorus, and gallium. Chips such as a yellow-green light-emitting diode in which phosphorus is doped with nitrogen and a blue light-emitting diode in which gallium nitride is used as a material can be used.
【００１６】この発明の発光装置において、発光ダイオ
ートチップを基板上に搭載して第１、第２パターンとそ
れぞれ電気的に接続する方法としては、基板上に直接
搭載し、発光ダイオードチップの一対の電極と第１、第
２パターンとをそれぞれ金属細線を用いてワイヤボンデ
ィングする方法。一方のパターン上に半田や導電性ペ
ーストを用いて一方の電極を直接接合し、他方の電極を
他方のパターンに金属細線を用いてワイヤボンディング
する方法。等を挙げることができる。In the light emitting device of the present invention, the method of mounting the light emitting die auto chip on the substrate and electrically connecting the light emitting die auto chip to the first and second patterns, respectively, includes mounting the light emitting die auto chip directly on the substrate, And wire bonding the first electrode and the first and second patterns using thin metal wires. A method in which one electrode is directly joined to one pattern using solder or conductive paste, and the other electrode is wire-bonded to the other pattern using a thin metal wire. And the like.
【００１７】この発明の発光装置において、周壁体の内
側に充填される透光性樹脂には熱硬化性樹脂としてエポ
キシ樹脂、シリコン樹脂、ポリイミド樹脂等を用いるこ
とができ、また、熱可塑性樹脂としてポリフェニレンサ
ルファイドを用いることができる。上記樹脂の充填はデ
ィスペンサーによる樹脂注入、印刷又は射出成型等の方
法により行うことができる。In the light-emitting device of the present invention, the light-transmitting resin filled inside the peripheral wall may be a thermosetting resin such as an epoxy resin, a silicon resin, or a polyimide resin. Polyphenylene sulfide can be used. The resin can be filled by a method such as resin injection, printing, or injection molding using a dispenser.
【００１８】この発明の発光装置を製造する方法は、平
板状の基板表面に導電性金属のメッキを施して第１およ
び第２パターンを形成する工程と、基板上に発光ダイオ
ードチップを搭載し、更に第１および第２パターンと電
気的に接続する工程と、第１および第２パターン上に絶
縁層を形成する工程と、周壁体の内側側面に形成された
金属反射層が発光ダイオードチップを囲うように周壁体
を絶縁層を介して基板上に装着する工程と、周壁体の内
側に透光性樹脂を充填する工程とから構成されていても
よい。According to the method of manufacturing a light emitting device of the present invention, a step of forming first and second patterns by plating a surface of a flat substrate with a conductive metal, mounting a light emitting diode chip on the substrate, A step of electrically connecting to the first and second patterns; a step of forming an insulating layer on the first and second patterns; and a metal reflective layer formed on the inner side surface of the peripheral wall surrounds the light emitting diode chip. Thus, the method may include a step of mounting the peripheral wall on the substrate via the insulating layer, and a step of filling the inside of the peripheral wall with a translucent resin.
【００１９】[0019]
【実施例】以下に図面に示す実施例に基づいてこの発明
を詳述する。なお、この実施例によってこの発明が限定
されるものではない。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on embodiments shown in the drawings. The present invention is not limited by the embodiment.
【００２０】実施例１ この発明の実施例１について図１〜図６に基づいて説明
する。図１はこの発明による発光装置の斜視図、図２は
図１の発光装置をＡ−Ａ線に沿って切断した断面図であ
る。 Embodiment 1 Embodiment 1 of the present invention will be described with reference to FIGS. FIG. 1 is a perspective view of a light emitting device according to the present invention, and FIG. 2 is a cross-sectional view of the light emitting device of FIG. 1 taken along line AA.
【００２１】図１及び図２に示されるように、発光装置
１００は、平板状の基板２と、基板上に形成される第１
パターン３および第２パターン４と、発光ダイオードチ
ップ５と、第１及び第２パターン３、４上に形成される
絶縁層６と、周壁体７と、周壁体７の内側側面に形成さ
れる金属反射層８とを備え、発光ダイオードチップ５は
基板２上に搭載されるとともに第１および第２パターン
３、４と電気的に接続され、周壁体７はその金属反射層
８が発光ダイオードチップ５を囲うように絶縁層６を介
して基板２上に設けられ、周壁体７の内側には透光性樹
脂９が充填されている。As shown in FIGS. 1 and 2, the light emitting device 100 includes a flat substrate 2 and a first substrate 2 formed on the substrate.
The pattern 3 and the second pattern 4, the light emitting diode chip 5, the insulating layer 6 formed on the first and second patterns 3, 4, the peripheral wall 7, and the metal formed on the inner side surface of the peripheral wall 7 A light-emitting diode chip 5 mounted on the substrate 2 and electrically connected to the first and second patterns 3 and 4; Is provided on the substrate 2 with the insulating layer 6 interposed therebetween, and the inside of the peripheral wall body 7 is filled with a translucent resin 9.
【００２２】なお、周壁体７の金属反射層８は当然導電
性を有するが、第１パターン３及び第２パターン４と金
属反射層８との間には絶縁層６が介在しているので、第
１パターン３と第２パターン４がショートすることはな
い。Although the metal reflective layer 8 of the peripheral wall 7 has conductivity, the insulating layer 6 is interposed between the first pattern 3 and the second pattern 4 and the metal reflective layer 8. There is no short circuit between the first pattern 3 and the second pattern 4.
【００２３】特に図１に示されるように、絶縁層６は第
１パターン３及び第２パターン４上だけでなく、基板２
の外縁に沿って形成されている。また、図１及び図２に
示されるように、発光ダイオードチップ５は第１パター
ン３上に導電性ペースト１０を用いて直接搭載されるこ
とにより第１パターン３と電気的に接続されている。一
方、第２パターン４とは金属細線１１を用いてワイヤボ
ンディングすることにより電気的に接続されている。In particular, as shown in FIG. 1, the insulating layer 6 is formed not only on the first pattern 3 and the second pattern 4 but also on the substrate 2.
Is formed along the outer edge of. As shown in FIGS. 1 and 2, the light emitting diode chip 5 is directly mounted on the first pattern 3 using the conductive paste 10 so as to be electrically connected to the first pattern 3. On the other hand, it is electrically connected to the second pattern 4 by wire bonding using the thin metal wires 11.
【００２４】図１及び図２中に符号１２で示されるの
は、第１パターン３及び第２パターン４を基板裏面へ導
くスルホールである。Reference numeral 12 in FIGS. 1 and 2 denotes a through hole for guiding the first pattern 3 and the second pattern 4 to the back surface of the substrate.
【００２５】なお、発光装置１００を構成する各部の材
料は、基板２はガラスエポキシ樹脂、絶縁層６はエポキ
シ樹脂製接着シート、周壁体７はガラスエポキシ樹脂、
金属反射層８は銀、透光性樹脂９はエポキシ樹脂であ
る。第１パターン３及び第２パターン４は、スルーホー
ル１２を含む基板２上の必要箇所に無電解メッキ法によ
って銅、ニッケル又は金のメッキ層が形成されたもので
ある。金属細線１１を用いたワイヤボンディングは、金
線を用いた熱圧着方式又は超音波熱圧着方式、アルミニ
ウム線を用いた超音波方式のいずれでもよいが、実施例
では金線を用いた超音波熱圧着方式でワイヤボンディン
グを行っている。The material of each part constituting the light emitting device 100 is as follows: the substrate 2 is a glass epoxy resin, the insulating layer 6 is an adhesive sheet made of an epoxy resin, the peripheral wall 7 is a glass epoxy resin,
The metal reflection layer 8 is silver, and the translucent resin 9 is epoxy resin. The first pattern 3 and the second pattern 4 are each formed by forming a copper, nickel or gold plating layer on a required portion of the substrate 2 including the through hole 12 by an electroless plating method. The wire bonding using the fine metal wire 11 may be any of a thermocompression bonding method using a gold wire, an ultrasonic thermocompression bonding method, and an ultrasonic bonding method using an aluminum wire. Wire bonding is performed by crimping.
【００２６】図１及び図２に示すように、この発明の発
光装置１では、平板状の基板２に第１パターン３及び第
２パターン４を形成するので、第１パターン３及び第２
パターン４に凹凸や荒れは生じにくい。このため、特
に、第２パターン４と発光ダイオードチップ５とを接続
する金属細線１１のワイヤボンディングは確実に行われ
る。As shown in FIGS. 1 and 2, in the light emitting device 1 of the present invention, the first pattern 3 and the second pattern 4 are formed on the flat substrate 2, so that the first pattern 3 and the second pattern
The pattern 4 is unlikely to have irregularities or roughness. For this reason, especially, the wire bonding of the thin metal wire 11 connecting the second pattern 4 and the light emitting diode chip 5 is reliably performed.
【００２７】そして、内側側面に金属反射層８を備えた
周壁体７を発光ダイオードチップ５を囲うように平板状
の基板２上に設けているので、発光ダイオードチップ５
の出射光が発光装置１００の横方向に漏れることはな
い。これにより、発光装置１００の出射光利用効率は非
常に良好なものとなる。Since the peripheral wall 7 having the metal reflection layer 8 on the inner side surface is provided on the flat substrate 2 so as to surround the light emitting diode chip 5, the light emitting diode chip 5
Does not leak in the lateral direction of the light emitting device 100. Thereby, the efficiency of using the emitted light of the light emitting device 100 is very good.
【００２８】次に、図３及び図４に基づいて、図１及び
図２に示される発光装置１００の製造方法について説明
する。図３及び図４は発光装置１００の製造工程を示す
工程図である。発光装置１００の製造においてはまず、
図３（ａ）に示すように基板２上に第１パターン３及び
第２パターン４を形成する。Next, a method of manufacturing the light emitting device 100 shown in FIGS. 1 and 2 will be described with reference to FIGS. 3 and 4 are process diagrams showing the manufacturing process of the light emitting device 100. In manufacturing the light emitting device 100, first,
A first pattern 3 and a second pattern 4 are formed on the substrate 2 as shown in FIG.
【００２９】次に、図３（ｂ）に示すように第１パター
ン３上に発光ダイオードチップ５を導電性ペースト１０
を用いて搭載し、更に発光ダイオードチップ５と第２パ
ターン４を金属細線１１を用いたワイヤボンディングに
より接続する。次に、図４（ｃ）に示すように予めエポ
キシ樹脂製接着シートを基板２の外縁と同寸法で、か
つ、内側が開口するように切り出して形成した絶縁層６
を基板２上に装着する。Next, as shown in FIG. 3B, a light emitting diode chip 5 is
Then, the light emitting diode chip 5 and the second pattern 4 are connected by wire bonding using the thin metal wires 11. Next, as shown in FIG. 4 (c), an insulating layer 6 previously formed by cutting out an epoxy resin adhesive sheet having the same dimensions as the outer edge of the substrate 2 and opening the inside.
Is mounted on the substrate 2.
【００３０】次に、図４（ｄ）に示すように絶縁層６の
上に周壁体７を装着する。なお、周壁体７の内側側面に
はフォトエッチング法又は無電解メッキ法によって、予
め金属反射層８を形成しておく。最後に、周壁体７の内
側に透光性樹脂９を充填して発光装置１００（図１及び
図２）が完成する。Next, the peripheral wall 7 is mounted on the insulating layer 6 as shown in FIG. The metal reflective layer 8 is formed on the inner side surface of the peripheral wall 7 in advance by a photoetching method or an electroless plating method. Finally, the translucent resin 9 is filled inside the peripheral wall body 7 to complete the light emitting device 100 (FIGS. 1 and 2).
【００３１】実施例２ 次にこの発明の実施例２について図５に基づいて説明す
る。図５はこの発明による発光装置の断面図である。図
５に示されるように発光装置２００は、周壁体２７の内
側側面が発光ダイオードチップ２５の出射光の出射方向
Ｂに対して末広がりとなるように傾斜している。これに
より、発光ダイオードチップ２５の出射光を前方へ反射
する効率がより向上している。なお、周壁体の内側側面
の傾斜は直線状でなくともよく、例えば曲面状にする
等、より高い反射効率を求めて斜面形状を変更すること
は自由である。その他の構成は実施例１の発光装置１０
０（図１及び図２）と同じである。 Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 5 is a sectional view of a light emitting device according to the present invention. As shown in FIG. 5, the light emitting device 200 is inclined such that the inner side surface of the peripheral wall body 27 is divergent with respect to the emission direction B of the light emitted from the light emitting diode chip 25. Thereby, the efficiency of reflecting the light emitted from the light emitting diode chip 25 forward is further improved. Note that the slope of the inner side surface of the peripheral wall body does not have to be linear, and it is free to change the slope shape for higher reflection efficiency, for example, by making it curved. Other configurations are the same as those of the light emitting device 10 of the first embodiment.
0 (FIGS. 1 and 2).
【００３２】実施例３ 次にこの発明の実施例３について図６に基づいて説明す
る。図６はこの発明による発光装置の断面図であるが、
その構造は実施例１の発光装置１００（図１及び図２）
と同じである。図６に示される発光装置３００が実施例
１の発光装置１００と異なっているのは周壁体３７の色
を黒色としている点である。これにより、発光装置３０
０の発光部（周壁体３７の内側）を他所から際立たせて
発光時のコントラストを向上させている。これは、特に
多数の発光装置が並べられる電光表示板等に使用される
場合に特に効果的である。なお、発光ダイオードチップ
の発光色によっては周壁体の色を変更してもよく、例え
ば青色の発色光に対して周壁体を赤色にする等、発光色
を際立たせることができる色ならば周壁体の色は黒色以
外でもよい。 Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 6 is a sectional view of a light emitting device according to the present invention.
The structure is the light emitting device 100 of the first embodiment (FIGS. 1 and 2).
Is the same as The light emitting device 300 shown in FIG. 6 differs from the light emitting device 100 of the first embodiment in that the color of the peripheral wall 37 is black. Thereby, the light emitting device 30
The 0 light emitting portion (the inside of the peripheral wall body 37) stands out from other places to improve the contrast at the time of light emission. This is particularly effective when used for an electric display panel or the like in which a large number of light emitting devices are arranged. The color of the peripheral wall may be changed depending on the emission color of the light-emitting diode chip. For example, if the color that can make the emission color stand out, such as making the peripheral wall red with respect to blue color light, the peripheral wall may be changed. May be other than black.
【００３３】実施例４ 次にこの発明の実施例４について図７に基づいて説明す
る。図７はこの発明による発光装置の斜視図である。図
７に示されるように発光装置４００は、周壁体４７の内
側が楕円形状に開口されている。これにより、発光装置
による表示を柔らかな印象のものとすることができる。
その他の構成は実施例１の発光装置１００（図１及び図
２）と同じである。 Embodiment 4 Next, Embodiment 4 of the present invention will be described with reference to FIG. FIG. 7 is a perspective view of a light emitting device according to the present invention. As shown in FIG. 7, in the light emitting device 400, the inside of the peripheral wall 47 is opened in an elliptical shape. Thereby, the display by the light emitting device can be given a soft impression.
Other configurations are the same as those of the light emitting device 100 of the first embodiment (FIGS. 1 and 2).
【００３４】実施例５ 次にこの発明の実施例５について図８に基づいて説明す
る。図８はこの発明による発光装置の断面図である。図
８に示されるように発光装置５００は、周壁体５０の内
側に充填された透明樹脂５９が凸状に盛り上がり、レン
ズの役割を果している。その他の構成は実施例１の発光
装置１００（図１及び図２）と同じである。 Embodiment 5 Next, Embodiment 5 of the present invention will be described with reference to FIG. FIG. 8 is a sectional view of a light emitting device according to the present invention. As shown in FIG. 8, in the light emitting device 500, the transparent resin 59 filled inside the peripheral wall body 50 rises in a convex shape, and plays the role of a lens. Other configurations are the same as those of the light emitting device 100 of the first embodiment (FIGS. 1 and 2).
【００３５】[0035]
【発明の効果】この発明によれば、発光ダイオードと電
極パターンとを接続する際の確実性及び信頼性を高めつ
つ、出射光利用効率の高い発光装置を提供することがで
きる。According to the present invention, it is possible to provide a light emitting device having high efficiency of using emitted light while improving reliability and reliability when connecting a light emitting diode and an electrode pattern.
【図１】この発明の発光装置の実施例１の形態を示す斜
視図である。FIG. 1 is a perspective view showing a light emitting device according to a first embodiment of the present invention.
【図２】図１に示される発光装置をＡ−Ａ線に沿って切
断した断面図である。FIG. 2 is a cross-sectional view of the light emitting device shown in FIG. 1 taken along line AA.
【図３】図１に示される発光装置の製造工程を示す工程
図である。FIG. 3 is a process chart showing a manufacturing process of the light emitting device shown in FIG. 1;
【図４】図１に示される発光装置の製造工程を示す工程
図である。FIG. 4 is a process chart showing a manufacturing process of the light emitting device shown in FIG.
【図５】この発明の発光装置の実施例２の形態を示す断
面図である。FIG. 5 is a cross-sectional view illustrating a light emitting device according to a second embodiment of the present invention.
【図６】この発明の発光装置の実施例３の形態を示す断
面図である。FIG. 6 is a cross-sectional view showing a third embodiment of the light emitting device of the present invention.
【図７】この発明の発光装置の実施例４の形態を示す斜
視図である。FIG. 7 is a perspective view showing a light emitting device according to a fourth embodiment of the present invention.
【図８】この発明の発光装置の実施例５の形態を示す断
面図である。FIG. 8 is a cross-sectional view illustrating a light emitting device according to a fifth embodiment of the present invention.
２・・・基板 ３・・・第１パターン ４・・・第２パターン ５・・・発光ダイオードチップ ６・・・絶縁層 ７・・・周壁体 ８・・・金属反射層 ９・・・透光性樹脂 １０・・・導電性ペースト １１・・・金属細線 １２・・・スルーホール １００・・・発光装置 DESCRIPTION OF SYMBOLS 2 ... Substrate 3 ... 1st pattern 4 ... 2nd pattern 5 ... Light emitting diode chip 6 ... Insulating layer 7 ... Peripheral wall 8 ... Metal reflective layer 9 ... Transparency Photoresin 10 Conductive paste 11 Fine metal wire 12 Through hole 100 Light emitting device
Claims (5)
１および第２パターンと、発光ダイオードチップと、第
１及び第２パターン上に形成される絶縁層と、周壁体
と、周壁体の内側側面に形成される金属反射層とを備
え、発光ダイオードチップは基板上に搭載されるととも
に第１および第２パターンと電気的に接続され、周壁体
はその金属反射層が発光ダイオードチップを囲うように
絶縁層を介して基板上に設けられ、周壁体の内側には透
光性樹脂が充填されている発光装置。1. A flat substrate, first and second patterns formed on the substrate, a light emitting diode chip, an insulating layer formed on the first and second patterns, a peripheral wall, and a peripheral wall A light-emitting diode chip mounted on a substrate and electrically connected to the first and second patterns; and a peripheral wall body having a light-emitting diode chip having a metal reflection layer formed on an inner side surface of the body. A light-emitting device provided on a substrate with an insulating layer interposed therebetween, and a translucent resin filled inside a peripheral wall body.
プの出射光の出射方向に末広がりとなるように傾斜して
いる請求項１に記載の発光装置。2. The light emitting device according to claim 1, wherein the inner side surface of the peripheral wall is inclined so as to be divergent in the emission direction of the light emitted from the light emitting diode chip.
光装置。3. The light emitting device according to claim 1, wherein the peripheral wall is black.
項１に記載の発光装置。4. The light emitting device according to claim 1, wherein the insulating layer is a resin adhesive sheet.
法であって、平板状の基板表面に導電性金属のメッキを
施して第１および第２パターンを形成する工程と、基板
上に発光ダイオードチップを搭載し、更に第１および第
２パターンと電気的に接続する工程と、第１および第２
パターン上に絶縁層を形成する工程と、周壁体の内側側
面に形成された金属反射層が発光ダイオードチップを囲
うように周壁体を絶縁層を介して基板上に装着する工程
と、周壁体の内側に透光性樹脂を充填する工程とからな
る発光装置の製造方法。5. A method for manufacturing a light emitting device according to claim 1, wherein a step of plating the surface of the flat substrate with a conductive metal to form the first and second patterns, and forming the first and second patterns on the substrate. Mounting a light emitting diode chip and further electrically connecting the first and second patterns;
Forming an insulating layer on the pattern, mounting the peripheral wall on the substrate via the insulating layer such that the metal reflective layer formed on the inner side surface of the peripheral wall surrounds the light emitting diode chip, and Filling the inside with a translucent resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32009899A JP2001144333A (en) | 1999-11-10 | 1999-11-10 | Light-emitting device and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32009899A JP2001144333A (en) | 1999-11-10 | 1999-11-10 | Light-emitting device and manufacturing method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001144333A true JP2001144333A (en) | 2001-05-25 |
Family
ID=18117701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32009899A Pending JP2001144333A (en) | 1999-11-10 | 1999-11-10 | Light-emitting device and manufacturing method therefor |
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