JP3137823B2 - Chip component type LED and method of manufacturing the same - Google Patents
Chip component type LED and method of manufacturing the sameInfo
- Publication number
- JP3137823B2 JP3137823B2 JP06027956A JP2795694A JP3137823B2 JP 3137823 B2 JP3137823 B2 JP 3137823B2 JP 06027956 A JP06027956 A JP 06027956A JP 2795694 A JP2795694 A JP 2795694A JP 3137823 B2 JP3137823 B2 JP 3137823B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- hole
- led chip
- chip
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 138
- 239000002184 metal Substances 0.000 claims description 138
- 239000000758 substrate Substances 0.000 claims description 129
- 239000011347 resin Substances 0.000 claims description 43
- 229920005989 resin Polymers 0.000 claims description 43
- 230000002093 peripheral effect Effects 0.000 claims description 32
- 239000004020 conductor Substances 0.000 claims description 29
- 238000007789 sealing Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000007772 electroless plating Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 8
- 238000005476 soldering Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000000881 depressing effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、表面実装用のチップ部
品型LED及びその製造方法に関し、各種表示パネル、
液晶表示装置のバックライト、照光スイッチ等の光源と
して利用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip component type LED for surface mounting and a method of manufacturing the same, and relates to various display panels,
It is used as a light source such as a backlight of a liquid crystal display device and an illumination switch.
【0002】[0002]
【従来の技術】各種表示パネル、液晶表示装置のバック
ライト、照光スイッチ等の光源として、従来よりチップ
部品型LEDが利用されている。2. Description of the Related Art Chip component type LEDs have conventionally been used as light sources for various display panels, backlights of liquid crystal display devices, illumination switches, and the like.
【0003】このような従来のチップ部品型LEDの構
造の一例を、図14乃至図16に示す。FIGS. 14 to 16 show an example of the structure of such a conventional chip component type LED.
【0004】図14に示すチップ部品型LEDは、カソ
ード側である一方のリードフレーム端子60に、Agペ
ーストでLEDチップ61を実装し、このLEDチップ
61とアノード側である他方のリードフレーム端子62
とを金属細線(Au線等)63で接続し、さらに全体を
透明樹脂64で封止した構造となっている。In a chip component type LED shown in FIG. 14, an LED chip 61 is mounted on one lead frame terminal 60 on the cathode side with an Ag paste, and this LED chip 61 and the other lead frame terminal 62 on the anode side.
Are connected by a thin metal wire (Au wire or the like) 63, and the whole is sealed with a transparent resin 64.
【0005】また、図15に示すチップ部品型LED
は、絶縁基板70の表面に形成された一方の配線パター
ン74上にLEDチップ71を接着し、対になっている
他方の配線パターン75とこのLEDチップ71とを金
属細線(Au線等)72で接続し、さらにLEDチップ
71と金属細線72とを含む絶縁基板70の表面を透明
樹脂73で封止した構造となっている。[0005] A chip component type LED shown in FIG.
Is to bond an LED chip 71 onto one wiring pattern 74 formed on the surface of an insulating substrate 70, and connect the other pair of wiring patterns 75 and this LED chip 71 to a thin metal wire (such as an Au wire) 72. And the surface of an insulating substrate 70 including the LED chip 71 and the fine metal wires 72 is sealed with a transparent resin 73.
【0006】また、図16に示すチップ部品型LED
は、絶縁基板81,82を2層構造としたもので、上部
の絶縁基板82に貫通穴83を形成し、この貫通穴83
内の底部(すなわち、絶縁基板81の上面)まで延設し
て一方の配線パターン84を形成し、貫通穴83内の前
記配線パターン84上にLEDチップ85を実装し、こ
のLEDチップ85と、他方の配線パターン86とを金
属細線(Au線等)87で接続し、さらにLEDチップ
85と金属細線87とを含む絶縁基板82の表面を透明
樹脂88で封止した構造となっている。A chip component type LED shown in FIG.
Is a two-layer structure of the insulating substrates 81 and 82. A through-hole 83 is formed in the upper insulating substrate 82, and the through-hole 83 is formed.
One of the wiring patterns 84 is formed to extend to the bottom portion (that is, the upper surface of the insulating substrate 81), and the LED chip 85 is mounted on the wiring pattern 84 in the through hole 83. The other wiring pattern 86 is connected with a thin metal wire (Au wire or the like) 87, and the surface of an insulating substrate 82 including the LED chip 85 and the thin metal wire 87 is sealed with a transparent resin 88.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、図14
に示すチップ部品型LEDは、リードフレーム端子60
にLEDチップ61を固定する構造であるため、十分な
強度を得るためには、少なくともリードフレーム端子6
0を厚くする必要があるとともに、各リードフレーム6
0,62の先端部を含めてLEDチップ61の全体を樹
脂封止する必要があるため、全体的に厚くなる。また、
LEDチップ61の点灯時に側面や裏面への光が漏れて
しまうため、上方への反射効率が低いといった問題があ
った。However, FIG.
The chip component type LED shown in FIG.
In order to obtain a sufficient strength, at least the lead frame terminals 6 are required.
0 must be thicker, and each lead frame 6
It is necessary to seal the entire LED chip 61 including the ends of 0 and 62 with resin, so that the entire LED chip 61 becomes thicker. Also,
When the LED chip 61 is turned on, the light leaks to the side surface and the back surface, and there is a problem that the reflection efficiency upward is low.
【0008】また、図15に示すチップ部品型LED
は、絶縁基板70上にLEDチップ71が設けられた構
造であるため、LEDチップ71の点灯時に側面へ光が
漏れてしまうため、その分上方への反射効率が低いとい
った問題があった。Further, a chip component type LED shown in FIG.
Since the LED chip 71 is provided on the insulating substrate 70, the light leaks to the side surface when the LED chip 71 is turned on, so that there is a problem that the reflection efficiency upward is correspondingly low.
【0009】また、図16に示すチップ部品型LED
は、貫通穴83内にLEDチップ85を実装することで
薄型化が達成されているものの、貫通穴83の内周面が
底面に対して垂直に形成されていることから、LEDチ
ップ85の点灯時の上方への光の反射効率が低いといっ
た問題があった。また、2枚の絶縁基板81,82を必
要とすることから、薄型化が困難であるとともに、コス
ト的にも高くなるといった問題があった。A chip component type LED shown in FIG.
Although the thinning is achieved by mounting the LED chip 85 in the through hole 83, the lighting of the LED chip 85 is performed because the inner peripheral surface of the through hole 83 is formed perpendicular to the bottom surface. There is a problem that the efficiency of reflection of light upward at the time is low. Further, since two insulating substrates 81 and 82 are required, there is a problem that it is difficult to reduce the thickness and the cost is increased.
【0010】さらに、図15及び図16に示すチップ部
品型LEDは、共にLEDチップ71,85を絶縁基板
70,82上に実装することから、絶縁基板70,82
は実装可能な最低限度の厚みが必要となる。Further, in the chip component type LEDs shown in FIGS. 15 and 16, the LED chips 71 and 85 are mounted on the insulating substrates 70 and 82, respectively.
Requires the minimum thickness that can be mounted.
【0011】本発明はこのような問題点を解決すべく創
案されたもので、その目的は、LEDチップを実装する
ための基板厚みを無くして薄型化を達成するとともに、
点灯時の光の反射効率の向上を図ったチップ部品型LE
D及びその製造方法を提供することにある。The present invention has been made in order to solve such a problem, and an object of the present invention is to eliminate the thickness of a substrate for mounting an LED chip and achieve a reduction in thickness.
Chip component type LE with improved light reflection efficiency during lighting
D and its manufacturing method.
【0012】[0012]
【課題を解決するための手段】上記課題を解決するた
め、請求項1に記載された本発明のチップ部品型LED
は、貫通穴が形成された絶縁基板の裏面に、一方の配線
パターンを形成する金属薄板が添設され、前記貫通穴内
の前記金属薄板上にLEDチップが実装され、このLE
Dチップと前記絶縁基板の表面に形成された他方の配線
パターンとが電気的に接続されて透明樹脂により封止さ
れた構造とする。According to the present invention, there is provided a chip component type LED according to the present invention.
A metal thin plate forming one wiring pattern is attached to the back surface of the insulating substrate having the through hole formed therein, and an LED chip is mounted on the metal thin plate in the through hole.
The D chip and the other wiring pattern formed on the surface of the insulating substrate are electrically connected and sealed with a transparent resin.
【0013】また、請求項2に記載された本発明のチッ
プ部品型LEDは、貫通穴が形成された絶縁基板の裏面
に、一方の配線パターンを形成する金属薄板が添設さ
れ、前記貫通穴内の前記金属薄板上にLEDチップが実
装され、このLEDチップと前記絶縁基板の表面に形成
された他方の配線パターンとが電気的に接続されて透明
樹脂により封止されたもので、前記貫通穴の内周面が、
絶縁基板の裏面側から表面側に向かって漸次拡開する傾
斜面に形成されたものである。According to a second aspect of the present invention, there is provided a chip component type LED according to the present invention, wherein a metal thin plate for forming one wiring pattern is provided on the back surface of the insulating substrate having the through hole formed therein. An LED chip is mounted on the thin metal plate, and the LED chip and the other wiring pattern formed on the surface of the insulating substrate are electrically connected and sealed with a transparent resin. The inner circumference of
The insulating substrate is formed on an inclined surface that gradually expands from the back side to the front side.
【0014】また、請求項3に記載された本発明に係わ
るチップ部品型LEDの製造方法は、絶縁基板に貫通穴
を開設した後、裏面に金属薄板を添設する第1の工程
と、無電解及び電解メッキ法を用いて前記絶縁基板の表
面、裏面及び側面と前記貫通穴の内周面とにメッキ層を
形成する第2の工程と、絶縁基板の裏面に添設した前記
金属薄板及び絶縁基板の表面、裏面及び側面に形成した
前記メッキ層を分離して1対の電極を形成する第3の工
程と、前記貫通穴内の底面である前記金属薄板に導電材
料を用いてLEDチップを実装し、このLEDチップと
前記絶縁基板の表面に形成された他方の電極とを導電材
料で接続する第4の工程と、前記LEDチップと前記導
電材料とを透光性の樹脂にて封止する第5の工程とを具
備するものである。According to a third aspect of the present invention, there is provided a method of manufacturing a chip component type LED according to the present invention, comprising the steps of: forming a through hole in an insulating substrate; A second step of forming a plating layer on the front surface, the back surface, and the side surface of the insulating substrate and the inner peripheral surface of the through hole by using electrolysis and electrolytic plating, and the metal sheet attached to the back surface of the insulating substrate; LED chip using the surface of the insulating substrate, a third step of forming a rear surface and a pair of electrodes to separate the plating layer formed on the side surfaces, the conductive material to the metal sheet a bottom surface of the through hole the implementation, in the fourth step and the LED chip and the conductive material and the translucent resin which connects and electrodes other formed on the surface of this LED chip the insulating substrate with conductive material And a fifth step of sealing.
【0015】また、請求項4に記載された本発明に係わ
るチップ部品型LEDの製造方法は、表面のLEDチッ
プを実装する部分を除いて、絶縁基板の表面、裏面及び
側面に金属層を形成する第1の工程と、レーザ光を前記
絶縁基板のLEDチップ実装部分に照射して、裏面の金
属層まで達する貫通穴を形成する第2の工程と、前記貫
通穴の内周面に金属層を形成する第3の工程と、絶縁基
板の表面、裏面及び側面に形成した前記金属層を分離し
て1対の電極層を形成する第4の工程と、前記貫通穴内
の底面である前記金属層に導電材料を用いてLEDチッ
プを実装し、このLEDチップと前記絶縁基板の表面に
形成された他方の電極層とを導電材料で接続する第5の
工程と、前記LEDチップと前記導電材料とを透光性の
樹脂にて封止する第6の工程とを具備するものである。According to a fourth aspect of the present invention, there is provided a method of manufacturing a chip component type LED according to the present invention, wherein a metal layer is formed on a front surface, a back surface, and a side surface of an insulating substrate except for a portion on the front surface where an LED chip is mounted. A first step of irradiating a laser beam to the LED chip mounting portion of the insulating substrate to form a through hole reaching the metal layer on the back surface; and forming a metal layer on the inner peripheral surface of the through hole. A third step of forming a pair of electrode layers by separating the metal layers formed on the front surface, the back surface, and the side surface of the insulating substrate; and forming the metal layer on the bottom surface in the through hole. A fifth step of mounting an LED chip using a conductive material on a layer and connecting the LED chip and the other electrode layer formed on the surface of the insulating substrate with a conductive material; Is sealed with a translucent resin. It is intended to and a sixth step.
【0016】[0016]
【作用】請求項1に記載された発明の作用について説明
する。The operation of the first aspect will be described.
【0017】貫通穴が形成された絶縁基板の裏面に、一
方の配線パターンを形成する金属薄板を添設し、貫通穴
内の金属薄板上にLEDチップを実装し、このLEDチ
ップと絶縁基板の表面に形成された他方の配線パターン
とを電気的に接続して、透明樹脂により封止した構造と
する。すなわち、絶縁基板の裏面に金属薄板を添設する
ことにより、金属薄板は絶縁基板によってその形状が保
持される。そのため、この金属薄板に容易にLEDチッ
プを実装することができ、さらに金属細線で接続した場
合にも、変形することがない。つまり、絶縁基板が金属
薄板を保持することで、LEDチップの金属薄板上への
実装、金属細線の接続、透光性樹脂での封止といった作
業が容易に行えるものである。A thin metal plate for forming one wiring pattern is attached to the back surface of the insulating substrate having the through hole formed therein, and an LED chip is mounted on the thin metal plate in the through hole. Is electrically connected to the other wiring pattern formed on the substrate and sealed with a transparent resin. That is, by attaching a thin metal plate to the back surface of the insulating substrate, the shape of the thin metal plate is maintained by the insulating substrate. Therefore, the LED chip can be easily mounted on the thin metal plate, and the LED chip is not deformed even when connected by a thin metal wire. That is, by holding the thin metal plate by the insulating substrate, operations such as mounting of the LED chip on the thin metal plate, connection of the thin metal wire, and sealing with the translucent resin can be easily performed.
【0018】また、貫通穴の底部の金属薄板にLEDチ
ップを実装する構造であるため、従来は必要であったL
EDチップを実装するための基板(主に図13及び図1
4に示す構造のもの)が不要となり、極薄型が達成でき
る。すなわち、従来のチップ部品型LEDの厚みは、図
14に示すものでは1.1mm程度、図15及び図16に
示すものでは0.8mm程度であったが、本願のものでは
0.6mm以内に厚みを抑えることが可能となる。In addition, since the LED chip is mounted on the metal thin plate at the bottom of the through hole, L which is conventionally required
Substrates for mounting ED chips (mainly in FIGS. 13 and 1)
4) is unnecessary, and an extremely thin structure can be achieved. That is, the thickness of the conventional chip component type LED is about 1.1 mm in the one shown in FIG. 14 and about 0.8 mm in the ones shown in FIGS. It is possible to reduce the thickness.
【0019】請求項2に記載された発明の作用について
説明する。The operation of the invention described in claim 2 will be described.
【0020】貫通穴が形成された絶縁基板の裏面に、一
方の配線パターンを形成する金属薄板を添設し、貫通穴
内の金属薄板上にLEDチップを実装し、このLEDチ
ップと絶縁基板の表面に形成された他方の配線パターン
とを電気的に接続して、透明樹脂により封止する。この
とき、貫通穴の内周面を、絶縁基板の裏面側から表面側
に向かって漸次拡開する傾斜面に形成する。これによ
り、LEDチップの点灯時、側面に向かう光は傾斜面で
反射されて上方に向かうことから、上方への反射効率が
向上することになる。因みに、貫通穴の内周面を傾斜面
としたことによるLEDチップ点灯時の反射効率は、平
板基板上にLEDチップを実装した場合(図14乃至図
16に示す場合)と比較して、30パーセント以上増大
させることができる。A thin metal plate for forming one of the wiring patterns is attached to the back surface of the insulating substrate having the through hole, and an LED chip is mounted on the thin metal plate in the through hole. Is electrically connected to the other wiring pattern formed on the substrate and sealed with a transparent resin. At this time, the inner peripheral surface of the through hole is formed as an inclined surface that gradually expands from the back surface side to the front surface side of the insulating substrate. Accordingly, when the LED chip is turned on, the light traveling toward the side surface is reflected by the inclined surface and travels upward, so that the efficiency of upward reflection is improved. By the way, the reflection efficiency when the LED chip is turned on by making the inner peripheral surface of the through hole an inclined surface is 30 compared with the case where the LED chip is mounted on the flat board (the case shown in FIGS. 14 to 16). It can be increased by more than a percentage.
【0021】請求項3に記載された発明の作用について
説明する。The operation of the invention described in claim 3 will be described.
【0022】第1の工程では、絶縁基板に貫通穴を開設
した後、裏面に金属薄板を添設する。このように、まず
絶縁基板に貫通穴を開けることから、貫通穴は機械的な
ドリル等によっても開けることができる。このことは、
絶縁基板を何枚も重ねて貫通穴を一度に開けることを可
能とするものであり、低コスト化が実現できる。また、
絶縁基板の裏面に金属薄板を添設する方法としては、金
属薄板を単に接着剤で貼り合わせるといった簡単な方法
が可能である。In the first step, after a through hole is formed in the insulating substrate, a thin metal plate is attached to the back surface. As described above, since the through hole is first formed in the insulating substrate, the through hole can also be formed by a mechanical drill or the like. This means
This makes it possible to form a through hole at a time by stacking a number of insulating substrates, so that cost reduction can be realized. Also,
As a method of additionally provided a metal sheet on the back surface of the insulating substrate can simple method such bonding by simply glue the sheet metal.
【0023】次に、第2の工程では、無電解及び電解メ
ッキ法を用いて前記絶縁基板の表面、裏面及び側面と前
記貫通穴の内周面とにメッキ層を形成し、第3の工程
で、絶縁基板の裏面に添設した前記金属薄板及び絶縁基
板の表面、裏面及び側面に形成した前記メッキ層を分離
して1対の電極を形成する。そして、第4の工程では、
前記貫通穴内の底面である前記金属薄板に導電材料を用
いてLEDチップを実装し、このLEDチップと前記絶
縁基板の表面に形成された他方の電極とを導電材料で接
続し、次の第5の工程で、前記LEDチップと前記導電
材料とを透光性の樹脂にて封止して、チップ部品型LE
Dの製造を終了する。Next, in a second step, a plating layer is formed on the front, back and side surfaces of the insulating substrate and the inner peripheral surface of the through hole by using electroless and electrolytic plating methods. in the metal sheet and the insulating surface of the substrate that is additionally provided on the rear surface of the insulating substrate, and separating the plating layer formed on the back surface and side surfaces forming a pair of electrodes. And in the fourth step,
Wherein a bottom surface of the through hole with a conductive material to the metal sheet by mounting the LED chip, connect and electrodes other formed on the surface of this LED chip the insulating substrate with a conductive material, the following first In step 5, the LED chip and the conductive material are sealed with a translucent resin, and the chip component type LE is sealed.
The manufacture of D is completed.
【0024】請求項4に記載された本発明の作用につい
て説明する。The operation of the present invention described in claim 4 will be described.
【0025】第1の工程では、表面のLEDチップを実
装する部分を除いて、絶縁基板の表面、裏面及び側面に
金属層を形成し、次の第2の工程で、レーザ光を前記絶
縁基板のLEDチップ実装部分に照射して、裏面の金属
層まで達する貫通穴を形成する。レーザ光で絶縁基板の
対象エリアを除去すると、レーザ光は中心部から広がる
ように絶縁部を除去していくため、形成された貫通穴の
内周面は自然と傾斜面に形成される。つまり、レーザ光
を絶縁基板の表面側から照射することにより、貫通穴の
内周面は、絶縁基板の裏面側から表面側に向かって漸次
拡開する傾斜面に形成される。In the first step, a metal layer is formed on the front, back and side surfaces of the insulating substrate except for the portion where the LED chips are mounted on the front surface, and in the next second step, laser light is applied to the insulating substrate. Irradiates the LED chip mounting portion to form a through hole reaching the metal layer on the back surface. When the target area of the insulating substrate is removed by the laser light, the laser light removes the insulating part so as to spread from the center, so that the inner peripheral surface of the formed through hole is naturally formed as an inclined surface. That is, by irradiating the laser beam from the front surface side of the insulating substrate, the inner peripheral surface of the through hole is formed as an inclined surface that gradually expands from the back surface side to the front surface side of the insulating substrate.
【0026】次に、第3の工程では、前記貫通穴の内面
(周面及び底面)に金属層を形成し、次の第4の工程
で、絶縁基板の表面、裏面及び側面に形成した前記金属
層を分離して1対の電極層を形成し、次の第5の工程
で、前記貫通穴内の底面である前記金属層に導電材料を
用いてLEDチップを実装し、このLEDチップと前記
絶縁基板の表面に形成された他方の電極層とを導電材料
で接続する。そして、第6の工程で、前記LEDチップ
と前記導電材料とを透光性の樹脂にて封止して、チップ
部品型LEDの製造を終了する。Next, in a third step, a metal layer is formed on the inner surface (peripheral surface and bottom surface) of the through hole, and in a fourth step, the metal layer is formed on the front surface, the back surface, and the side surface of the insulating substrate. The metal layer is separated to form a pair of electrode layers, and in the next fifth step, an LED chip is mounted on the metal layer, which is the bottom surface in the through hole, using a conductive material. The other electrode layer formed on the surface of the insulating substrate is connected with a conductive material. Then, in a sixth step, the LED chip and the conductive material are sealed with a translucent resin, and the manufacture of the chip component type LED is completed.
【0027】[0027]
【実施例】以下、本発明の実施例を図面を参照して説明
する。 〔実施例1〕図1及び図2は、本発明のチップ部品型L
EDの断面図及び平面図を示しており、請求項1及び2
に対応した実施例である。Embodiments of the present invention will be described below with reference to the drawings. [Embodiment 1] FIGS. 1 and 2 show a chip part type L according to the present invention.
3 shows a sectional view and a plan view of the ED.
This is an embodiment corresponding to FIG.
【0028】図において、貫通穴12が形成された絶縁
基板10の表面102に金属層7,8が形成され、裏面
101に金属薄板5,6が添設されている。また、貫通
穴12の内周面は、絶縁基板10の裏面101側から表
面102側に向かって漸次拡開する傾斜面121に形成
されている。In the figure, metal layers 7 and 8 are formed on a front surface 102 of an insulating substrate 10 in which a through hole 12 is formed, and thin metal plates 5 and 6 are provided on a back surface 101. The inner peripheral surface of the through hole 12 is formed as an inclined surface 121 that gradually expands from the back surface 101 side to the front surface 102 side of the insulating substrate 10.
【0029】また、表面102の金属層7と裏面101
の金属薄板5とを接続し、かつ貫通穴12の傾斜面12
1及び底面122(金属薄板5)まで延設するように一
方の配線パターン9が形成され、表面102の金属層8
と裏面101の金属薄板6とを接続するように他方の配
線パターン4が形成されている。The metal layer 7 on the front surface 102 and the back surface 101
And the inclined surface 12 of the through hole 12.
1 and one wiring pattern 9 are formed so as to extend to the bottom surface 122 (the thin metal plate 5).
The other wiring pattern 4 is formed so as to connect to the metal thin plate 6 on the back surface 101.
【0030】そして、このように形成された貫通穴12
内の底面122(金属薄板5)にLEDチップ1が実装
され、このLEDチップ1と絶縁基板10の表面102
に形成された他方の配線パターン4とがAu等の金属細
線2で接続され、これらLEDチップ1と金属細線2と
が透明樹脂(透光性の樹脂)11により封止された構造
となっている。なお、図中の符号16は、はんだ付け時
の絶縁性を確保するためのレジスト層、符号17はAg
ペースト等の導電材料である。Then, the through-hole 12 formed as described above is formed.
The LED chip 1 is mounted on a bottom surface 122 (metal thin plate 5) inside the LED chip 1 and the LED chip 1 and the surface 102 of the insulating substrate 10.
Is connected to the other wiring pattern 4 formed by a thin metal wire 2 such as Au, and the LED chip 1 and the thin metal wire 2 are sealed by a transparent resin (translucent resin) 11. I have. Note that reference numeral 16 in the drawing denotes a resist layer for securing insulation during soldering, and reference numeral 17 denotes Ag.
It is a conductive material such as a paste.
【0031】次に、上記構成のチップ部品型LEDの製
造方法について、図3を参照して説明する。この製造方
法は、請求項3に対応している。Next, a method of manufacturing the chip component type LED having the above configuration will be described with reference to FIG. This manufacturing method corresponds to claim 3.
【0032】第1の工程では、表面102に金属層7,
8を有する絶縁基板10に、内周壁が傾斜面121であ
る貫通穴12を開設し、裏面101に金属薄板5,6を
貼り合わせる。ただし、このときの金属薄板5,6は、
この時点では連続した1枚の金属薄板である〔図3
(a)参照〕。In the first step, the metal layer 7,
A through-hole 12 whose inner peripheral wall is an inclined surface 121 is formed in the insulating substrate 10 having the inner surface 8, and thin metal plates 5 and 6 are bonded to the back surface 101. However, the metal sheets 5 and 6 at this time are
At this point, it is a single continuous metal sheet [FIG.
(A)].
【0033】また、貫通穴12の形成に際しては、裏面
101に金属薄板5,6を貼り合わせる前に行うことか
ら、機械的なドリル等によって開けることができる。そ
のため、絶縁基板10を何枚も重ねて、各絶縁基板10
に貫通穴12を一度に開けることが可能となる。ただ
し、この場合の開通穴12は円筒形であって、その内周
面は垂直面となる。そのため、傾斜面にするための加工
が必要となるが、低コスト化は実現できる。The through hole 12 is formed before the metal sheets 5 and 6 are bonded to the back surface 101, so that the through hole 12 can be formed by a mechanical drill or the like. Therefore, many insulating substrates 10 are stacked, and each insulating substrate 10
Can be opened at once. However, the opening 12 in this case is cylindrical, and its inner peripheral surface is a vertical surface. Therefore, processing for forming an inclined surface is required, but cost reduction can be realized.
【0034】第2の工程では、無電解及び電解メッキ法
を用いて、上記構成の絶縁基板10の表面102、裏面
101及び側面103,104と、貫通穴12内の傾斜
面121及び底面122とにメッキ層15を形成する。
ここで、絶縁基板10の表面とは、具体的には表面10
2に形成された金属層7,8の表面のことであり、絶縁
基板10の裏面とは、具体的には金属薄板5,6の表面
のことである〔図3(b)参照〕。In the second step, the surface 102, the back surface 101 and the side surfaces 103 and 104 of the insulating substrate 10 having the above structure, the inclined surface 121 and the bottom surface 122 in the through-hole 12 are formed by using electroless and electrolytic plating methods. Then, a plating layer 15 is formed.
Here, the surface of the insulating substrate 10 is specifically the surface 10
2 means the surfaces of the metal layers 7 and 8, and the back surface of the insulating substrate 10 specifically means the surfaces of the thin metal plates 5 and 6 (see FIG. 3B).
【0035】第3の工程では、絶縁基板10の裏面10
1側のメッキ層15を金属薄板5,6とともに分離処理
してそれぞれ配線パターン(アノード側及びカソード側
となる一対の電極)9,4を形成する。同じく、絶縁基
板10の表面102側のメッキ層も金属層7,8に分離
する。分離処理は、例えばエッチングやレーザ加工等で
金属部分を除去することにより行う。また、必要に応じ
て残った金属部分に電解メッキ法にて金属層を積み上げ
る。例えば、銅フィルムと銅メッキで配線パターン9,
4を形成した後、その金属層上にNi,AgあるいはA
u,パラジウム等を積層する。これは、金属表面の保護
あるいは金属線との接続性のためである。これにより、
基板の処理を完了する。また、絶縁基板10の裏面10
1には、はんだ付け時の絶縁性を確保するためのレジス
ト層16を形成する〔図3(c)参照〕。In the third step, the back surface 10 of the insulating substrate 10
The plating layer 15 on one side is separated from the metal sheets 5 and 6 to form wiring patterns (a pair of electrodes on the anode side and the cathode side) 9 and 4, respectively. Similarly, the plating layer on the surface 102 side of the insulating substrate 10 is also separated into the metal layers 7 and 8. The separation process is performed by removing a metal portion by, for example, etching or laser processing. If necessary, a metal layer is stacked on the remaining metal portion by an electrolytic plating method. For example, a wiring pattern 9,
After the formation of Ni, Ag or A on the metal layer
u, palladium, etc. are laminated. This is for protection of the metal surface or connectivity with the metal wire. This allows
Complete processing of the substrate. Also, the back surface 10 of the insulating substrate 10
In FIG. 1, a resist layer 16 for securing insulation during soldering is formed (see FIG. 3C).
【0036】第4の工程では、このようにして形成した
絶縁基板10の貫通穴12内の底面122(具体的に
は、金属薄板5上に形成された配線パターン9上))
に、Agペースト等の導電材料17を用いてLEDチッ
プ1を実装し、このLEDチップ1と絶縁基板10の表
面102に形成された他方の配線パターン4とを、Au
等の金属細線2で接続する〔図3(d)参照〕。In the fourth step, the bottom surface 122 (specifically, on the wiring pattern 9 formed on the thin metal plate 5) in the through hole 12 of the insulating substrate 10 thus formed)
Then, the LED chip 1 is mounted using a conductive material 17 such as an Ag paste, and the LED chip 1 and the other wiring pattern 4 formed on the surface 102 of the insulating substrate 10 are connected to Au.
(See FIG. 3D).
【0037】第5の工程では、これらLEDチップ1と
金属細線2とを内包するようにして、絶縁基板10の表
面102に透明樹脂(透光性の樹脂)11を充填し、L
EDチップ1と金属細線2とを完全に封止する。これに
より、図1に示す構造のチップ部品型LEDが作製され
る。 〔実施例2〕 図4及び図5は、本発明のチップ部品型LEDの他の実
施例を示す断面図及び平面図である。In a fifth step, the surface 102 of the insulating substrate 10 is filled with a transparent resin (translucent resin) 11 so as to enclose the LED chip 1 and the fine metal wires 2,
The ED chip 1 and the fine metal wire 2 are completely sealed. Thus, a chip component type LED having the structure shown in FIG. 1 is manufactured. Example 2 Figures 4 and 5 are a sectional view and a plan view showing another embodiment of a chip-type LED of the present invention.
【0038】図において、貫通穴32が形成された絶縁
基板30に、その表面302から、各側面303,30
4を経て裏面301に至る金属層27,28が形成され
ている。本実施例では、金属層27がカソード側、金属
層28がアノード側となる。また、貫通穴32の内周面
は、絶縁基板30の裏面301側から表面302側に向
かって漸次拡開する湾曲面321に形成されている。In the figure, an insulating substrate 30 in which a through hole 32 is formed is placed on a side surface 303, 30 from the surface 302 thereof.
4, metal layers 27 and 28 reaching the back surface 301 are formed. In this embodiment, the metal layer 27 is on the cathode side, and the metal layer 28 is on the anode side. The inner peripheral surface of the through hole 32 is formed as a curved surface 321 gradually expanding from the back surface 301 side to the front surface 302 side of the insulating substrate 30.
【0039】また、カソード側である金属層27を延設
する形で、貫通穴32の内周面に金属層29が形成され
ている。A metal layer 29 is formed on the inner peripheral surface of the through hole 32 so as to extend the metal layer 27 on the cathode side.
【0040】そして、このように形成された貫通穴32
内の底面322(具体的には、金属層27上に形成され
た金属層29))にLEDチップ21が実装され、この
LEDチップ21と絶縁基板30の表面302に形成さ
れたアノード側の金属層28とがAu等の金属細線22
で接続され、これらLEDチップ21と金属細線22と
が透明樹脂(透光性の樹脂)31により封止された構造
となっている。なお、図中の符号36は、はんだ付け時
の絶縁性を確保するためのレジスト層、符号37はAg
ペースト等の導電材料である。The through-hole 32 formed as described above
The LED chip 21 is mounted on the inner bottom surface 322 (specifically, the metal layer 29 formed on the metal layer 27), and the LED chip 21 and the anode-side metal formed on the surface 302 of the insulating substrate 30. The layer 28 is made of a thin metal wire 22 such as Au.
The LED chip 21 and the fine metal wire 22 are sealed by a transparent resin (translucent resin) 31. Reference numeral 36 in the figure denotes a resist layer for securing insulation during soldering, and reference numeral 37 denotes Ag.
It is a conductive material such as a paste.
【0041】次に、上記構成のチップ部品型LEDの製
造方法について、図6を参照して説明する。この製造方
法は、請求項4に対応している。Next, a method of manufacturing the chip component type LED having the above configuration will be described with reference to FIG. This manufacturing method corresponds to claim 4.
【0042】第1の工程では、絶縁基板30の表面30
2、裏面301及び両側面303,304に金属層2
7,28を形成し、この後、表面302のLEDチップ
21を実装する部分23の金属層を除去する。ただし、
LEDチップ21を実装する部分23の金属層を除去さ
れた後の金属層27,28は、この時点では絶縁基板3
0の裏面301側で連続した1枚の金属層である〔図6
(a)参照〕。In the first step, the surface 30 of the insulating substrate 30 is
2, the metal layer 2 on the back surface 301 and both side surfaces 303 and 304
7 and 28 are formed, and thereafter, the metal layer of the portion 23 of the surface 302 where the LED chip 21 is mounted is removed. However,
At this point, the metal layers 27 and 28 after the metal layer of the portion 23 on which the LED chip 21 is mounted are removed
0 is a single continuous metal layer on the back surface 301 side of FIG.
(A)].
【0043】第2の工程では、レーザ光を前記絶縁基板
30のLEDチップ実装部分23に照射して、裏面30
1の金属層27まで達する貫通穴32を形成する。レー
ザ光で絶縁基板30の対象エリアを除去すると、レーザ
光は中心部から広がるように絶縁部を除去していくた
め、形成された貫通穴32の内周面は自然と湾曲面32
1に形成される〔図6(b)参照〕。つまり、レーザ光
を絶縁基板30の表面302側から照射することによ
り、貫通穴32の内周面は、絶縁基板30の裏面301
側から表面302側に向かって漸次拡開する湾曲面32
1に形成される。In the second step, a laser beam is irradiated on the LED chip mounting portion 23 of the insulating substrate 30 to
A through-hole 32 reaching the first metal layer 27 is formed. When the target area of the insulating substrate 30 is removed with the laser light, the laser light removes the insulating portion so as to spread from the center, so that the inner peripheral surface of the formed through hole 32 naturally has a curved surface 32.
1 (see FIG. 6B). That is, by irradiating the laser beam from the front surface 302 side of the insulating substrate 30, the inner peripheral surface of the through hole 32 is
Curved surface 32 gradually expanding from the side toward the surface 302 side
1 is formed.
【0044】ただし、貫通穴32の形成は、レーザ光に
よる加工の他、薬品による樹脂部のエッチングや機械加
工(ドリルによる穴開け加工等)でもよい。エッチング
の場合には、レーザ光による加工と同様に、中心部から
広がるように絶縁部を除去していくため、形成された貫
通穴32の内周壁は自然と湾曲面321に形成される。However, the formation of the through hole 32 may be performed by etching the resin portion with a chemical or machining (drilling with a drill, etc.) in addition to machining with a laser beam. In the case of etching, the inner peripheral wall of the formed through hole 32 is naturally formed on the curved surface 321 in order to remove the insulating portion so as to spread from the central portion, similarly to the processing by the laser beam.
【0045】第3の工程では、貫通穴32の内面(周面
及び底面)に、金属層27を延設する形で金属層29を
形成する〔図6(c)参照〕。貫通穴32内に金属層2
9を形成するのは、LEDチップ21の点灯時の光の反
射効率を向上させるためであるが、絶縁基板30が白色
の樹脂である場合には、貫通穴32の内周面も白色であ
ることから、この場合には金属層29は無くてもよい
(図7参照)。In the third step, a metal layer 29 is formed on the inner surface (peripheral surface and bottom surface) of the through hole 32 so as to extend the metal layer 27 (see FIG. 6C). Metal layer 2 in through hole 32
The reason why 9 is formed is to improve the reflection efficiency of light when the LED chip 21 is turned on. When the insulating substrate 30 is a white resin, the inner peripheral surface of the through hole 32 is also white. Therefore, in this case, the metal layer 29 may not be provided (see FIG. 7).
【0046】第4の工程では、絶縁基板30の表面30
2及び裏面301に形成した金属層をそれぞれ分離して
1対の電極層(最終的な形状であるカソード側の金属層
27とアノード側の金属層28)を形成する〔図6
(d)参照〕。In the fourth step, the surface 30 of the insulating substrate 30 is
2 and the metal layer formed on the back surface 301 are separated from each other to form a pair of electrode layers (final shapes of the cathode-side metal layer 27 and the anode-side metal layer 28) [FIG.
(D)].
【0047】この後、絶縁基板30の裏面301に、は
んだ付け時の絶縁性を確保するためのレジスト層36を
形成する〔図6(e)参照〕。つまり、レジスト層36
によって、完成したチップ部品型LEDをはんだ付けす
る際の、裏面でのショートを防止する。Thereafter, a resist layer 36 for securing insulation during soldering is formed on the back surface 301 of the insulating substrate 30 (see FIG. 6E). That is, the resist layer 36
This prevents a short circuit on the back surface when soldering the completed chip component type LED.
【0048】第5の工程では、貫通穴32内の底面32
2である金属層29に、Agペースト等の導電材料37
を用いてLEDチップ21を実装し、このLEDチップ
21と絶縁基板30の表面302に形成された他方の金
属層28とを、Au等の金属細線22で接続する。そし
て、第6の工程で、LEDチップ21と金属細線22と
を透光性の樹脂31にて封止する。これにより、図4に
示す構造のチップ部品型LEDが作製される。なお、図
7は、実施例2に対応したチップ部品型LEDの変形例
を示している。 [実施の形態3] 図8は、本発明のチップ部品型LEDの他の実施例を示
す断面図であり、図1に示すチップ部品型LEDの変形
例である。In the fifth step, the bottom surface 32 in the through hole 32
The conductive material 37 such as an Ag paste is
The LED chip 21 is mounted by using the above-mentioned method, and the LED chip 21 and the other metal layer 28 formed on the surface 302 of the insulating substrate 30 are connected by a thin metal wire 22 such as Au. Then, in a sixth step, the LED chip 21 and the fine metal wires 22 are sealed with a translucent resin 31. Thus, a chip component type LED having a structure shown in FIG. 4 is manufactured. The figure
7 is a modification example of the chip component type LED corresponding to the second embodiment.
Is shown. Third Embodiment FIG. 8 is a cross-sectional view showing another example of the chip component LED of the present invention, which is a modification of the chip component LED shown in FIG.
【0049】同図において、貫通穴52が形成された絶
縁基板50の表面502に金属層47,48が形成さ
れ、裏面501に金属薄板45,46が添設されてい
る。また、貫通穴52の内周面は、本実施例では円筒形
状に形成されており、傾斜面とはされていない。In the figure, metal layers 47 and 48 are formed on a front surface 502 of an insulating substrate 50 in which a through hole 52 is formed, and thin metal plates 45 and 46 are provided on a back surface 501. The inner peripheral surface of the through hole 52 is formed in a cylindrical shape in this embodiment, and is not an inclined surface.
【0050】また、表面502の金属層47と裏面50
1の金属薄板45とを接続し、かつ貫通穴52の内周面
及び底面522(金属薄板45)まで延設するように一
方の配線パターン49が形成され、表面502の金属層
48と裏面501の金属薄板46とを接続するように他
方の配線パターン44が形成されている。The metal layer 47 on the front surface 502 and the back surface 50
One wiring pattern 49 is formed so as to connect the first metal sheet 45 and extend to the inner peripheral surface and the bottom surface 522 (metal sheet 45) of the through hole 52, and the metal layer 48 on the front surface 502 and the back surface 501. The other wiring pattern 44 is formed so as to connect with the thin metal plate 46 of FIG.
【0051】そして、このように形成された貫通穴52
内の底面522(金属薄板45)にLEDチップ41が
実装され、このLEDチップ41と絶縁基板50の表面
502に形成された他方の配線パターン44とがAu等
の金属細線42で接続されている。Then, the through-hole 52 thus formed is formed.
The LED chip 41 is mounted on the inner bottom surface 522 (metal thin plate 45), and the LED chip 41 and the other wiring pattern 44 formed on the surface 502 of the insulating substrate 50 are connected by a thin metal wire 42 such as Au. .
【0052】また、絶縁基板50の表面502に反射ケ
ース板53が添設されており、この反射ケース板53
に、LEDチップ41と金属細線42とを内包する大径
の貫通穴54が形成されている。この貫通穴54は、反
射ケース板53の裏面531側から表面532側に向か
って漸次拡開する傾斜面541に形成されている。そし
て、絶縁基板50の貫通穴52及び反射ケース板53の
貫通穴54に透明樹脂51が充填されて、LEDチップ
41と金属細線42とが樹脂封止された構造となってい
る。なお、図中の符号56は、はんだ付け時の絶縁性を
確保するためのレジスト層、符号57はAgペースト等
の導電材料である。A reflection case plate 53 is additionally provided on the surface 502 of the insulating substrate 50.
In addition, a large-diameter through hole 54 containing the LED chip 41 and the thin metal wire 42 is formed. The through hole 54 is formed in an inclined surface 541 that gradually expands from the back surface 531 side of the reflection case plate 53 toward the front surface 532 side. The through hole 52 of the insulating substrate 50 and the through hole 54 of the reflection case plate 53 are filled with the transparent resin 51, and the LED chip 41 and the fine metal wires 42 are sealed with resin. Reference numeral 56 in the figure is a resist layer for securing insulation during soldering, and reference numeral 57 is a conductive material such as an Ag paste.
【0053】次に、上記構成のチップ部品型LEDの製
造方法について、図9を参照して説明する。Next, a method of manufacturing the chip component type LED having the above configuration will be described with reference to FIG.
【0054】第1の工程では、表面502に金属層4
7,48を有する絶縁基板50に、貫通穴52を開設
し、裏面501に金属薄板45,46を貼り合わせる。
ただし、このときの金属薄板45,46は、この時点で
は連続した1枚の金属薄板である〔図9(a)〕。In the first step, the metal layer 4
A through hole 52 is formed in an insulating substrate 50 having 7, 48, and thin metal plates 45, 46 are bonded to a back surface 501.
However, the metal sheets 45 and 46 at this time are one continuous metal sheet at this time [FIG. 9 (a)].
【0055】また、貫通穴52の形成に際しては、裏面
501に金属薄板45,46を貼り合わせる前に行うこ
とから、機械的なドリル等によって開けることができ
る。そのため、絶縁基板50を何枚も重ねて、各絶縁基
板50に貫通穴52を一度に開けることが可能となり、
低コスト化が実現できる。The through hole 52 is formed before the metal sheets 45 and 46 are bonded to the back surface 501, so that the through hole 52 can be formed by a mechanical drill or the like. Therefore, it becomes possible to stack a number of insulating substrates 50 and to form the through holes 52 in each insulating substrate 50 at one time,
Cost reduction can be realized.
【0056】第2の工程では、無電解及び電解メッキ法
を用いて、上記構成の絶縁基板50の表面502、裏面
501及び両側面503,504と、貫通穴52の内周
面521及び底面522とにメッキ層55を形成する。
ここで、絶縁基板50の表面とは、具体的には表面50
2に形成された金属層47,48の表面のことであり、
絶縁基板50の裏面とは、具体的には金属薄板45,4
6の表面のことである〔図9(b)〕。In the second step, the front surface 502, the back surface 501 and both side surfaces 503 and 504 of the insulating substrate 50 having the above structure, the inner peripheral surface 521 and the bottom surface 522 of the through hole 52 are formed by electroless and electrolytic plating. Then, a plating layer 55 is formed.
Here, the surface of the insulating substrate 50 specifically refers to the surface 50.
2 are the surfaces of the metal layers 47 and 48 formed in
The back surface of the insulating substrate 50 specifically refers to the thin metal plates 45 and 4.
6 (FIG. 9B).
【0057】第3の工程では、絶縁基板50の裏面側の
メッキ層55〔図9(b)参照〕を金属薄板45,46
とともに分離処理してそれぞれ配線パターン44,49
を形成する。分離処理は、例えばエッチングやレーザ加
工等で金属部分を除去することにより行う。これによ
り、基板の処理を完了する。また、絶縁基板50の裏面
501には、はんだ付け時の絶縁性を確保するためのレ
ジスト層56を形成する〔図9(c)〕。[0057] In the third step, the back surface side of the plating layer 55 of the insulating substrate 50 [see FIG. 9 (b)] to the sheet metal 45 and 46
Together with the wiring patterns 44 and 49, respectively.
To form The separation process is performed by removing a metal portion by, for example, etching or laser processing. Thus, the processing of the substrate is completed. Further, a resist layer 56 is formed on the back surface 501 of the insulating substrate 50 to ensure insulation during soldering (FIG. 9C).
【0058】第4の工程では、このようにして形成した
絶縁基板50の表面502側に、LEDチップ41と金
属細線42とを内包する大径の貫通穴54が形成された
反射ケース板53を添設する〔図9(d)〕。In the fourth step, a reflective case plate 53 having a large-diameter through hole 54 containing the LED chip 41 and the fine metal wire 42 is formed on the surface 502 of the insulating substrate 50 thus formed. Attached [FIG. 9 (d)].
【0059】第5の工程では、絶縁基板50の貫通穴5
2内の底面522(具体的には、金属薄板45上に形成
されたメッキ層)に、Agペースト等の導電材料57を
用いてLEDチップ41を実装し、このLEDチップ4
1と絶縁基板50の表面502に形成された他方の配線
パターン44とを、Au等の金属細線42で接続する
〔図9(e)〕。In the fifth step, the through holes 5 in the insulating substrate 50 are formed.
The LED chip 41 is mounted on a bottom surface 522 (specifically, a plating layer formed on the thin metal plate 45) using a conductive material 57 such as an Ag paste.
1 and the other wiring pattern 44 formed on the surface 502 of the insulating substrate 50 are connected by a thin metal wire 42 such as Au (FIG. 9E).
【0060】第6の工程では、絶縁基板50の貫通穴5
2及び反射ケース板53の貫通穴54に透明樹脂51を
注入して、LEDチップ41と金属細線42とを完全に
樹脂封止する。これにより、図8に示す構造のチップ部
品型LEDが作製される。In the sixth step, the through holes 5 of the insulating substrate 50 are formed.
The transparent resin 51 is injected into the through-hole 54 of the second case 2 and the reflection case plate 53, and the LED chip 41 and the fine metal wires 42 are completely resin-sealed. Thus, a chip component type LED having a structure shown in FIG. 8 is manufactured.
【0061】図8に示す構造では、反射ケース板53を
絶縁基板50とは別に設けることにより、反射ケース板
53に形成する貫通穴54を大きくできるので、傾斜面
541も大きく広いものとなり、その分上方への反射効
率が向上するものである。また、樹脂封止は、貫通穴5
2及び54に樹脂を注入するだけでよく、形状を保持す
るための型を必要としないことから、簡単に行えるとい
った利点がある。因みに、図14乃至図16に示す従来
のチップ部品型LEDでは、樹脂封止のための型が必要
となる。In the structure shown in FIG. 8, since the reflection case plate 53 is provided separately from the insulating substrate 50, the through hole 54 formed in the reflection case plate 53 can be enlarged, so that the inclined surface 541 is also large and wide. The reflection efficiency in the upward direction is improved. In addition, the resin sealing is performed through the through hole 5.
It is only necessary to inject the resin into 2 and 54, and there is no need for a mold for maintaining the shape. Incidentally, the conventional chip component type LEDs shown in FIGS. 14 to 16 require a mold for resin sealing.
【0062】さらに、LEDチップ41を直接金属薄板
45上に実装することから、従来の基板が不要となり、
その分薄型化が可能になるとともに、材料コストの低減
も図ることができる。さらにまた、LEDチップ41を
実装する周辺部以外は絶縁基板53で保持されているた
め、十分な強度が確保でき、金属細線42の取り付けや
樹脂封止等も安定して行えるものである。Further, since the LED chip 41 is directly mounted on the metal thin plate 45, a conventional substrate is not required,
Accordingly, the thickness can be reduced, and the material cost can be reduced. Furthermore, since the portion other than the peripheral portion where the LED chip 41 is mounted is held by the insulating substrate 53, sufficient strength can be secured, and the attachment of the thin metal wires 42 and resin sealing can be performed stably.
【0063】なお、この反射ケース板53を設ける構成
を、図4及び図5に示す構造のチップ部品型LEDに適
用することが可能である。このときの製造方法は、上記
実施例2で示したレジスト層36を形成する第5の工程
〔図6(e)〕の後に、上記した第4の工程〔図9
(d)〕から第6の工程までを行えばよい。 〔実施例4〕図10乃至図13は、図1及び図4に示す
チップ部品型LEDのさらに変形例を示すもので、封止
樹脂11,31の表面をレンズ形状としたものである。
これにより、LEDチップ1,21の点灯時、斜め上方
に散乱状態で放出される光がこのレンズ面で集光されて
上方に向かうことから、上方への反射効率がさらに向上
することになる。The configuration in which the reflection case plate 53 is provided can be applied to a chip component type LED having a structure shown in FIGS. The manufacturing method at this time is as follows: after the fifth step (FIG. 6E) of forming the resist layer 36 shown in the second embodiment, the fourth step [FIG.
(D)] to the sixth step may be performed. [Embodiment 4] FIGS. 10 to 13 show further modified examples of the chip component type LED shown in FIGS. 1 and 4, wherein the surfaces of the sealing resins 11 and 31 are formed in a lens shape.
Accordingly, when the LED chips 1 and 21 are turned on, light emitted in a scattered state obliquely upward is collected by the lens surface and travels upward, so that the upward reflection efficiency is further improved.
【0064】図10及び図11に示すものは、封止樹脂
11,31の形状を半円柱状(いわゆるかまぼこ型)に
形成したもの、図12に示すものは、封止樹脂11,3
1の天面の一部を凹ませてレンズ形状(破線により示
す)58に加工(インナーレンズ)したもの、図13に
示すものは、封止樹脂11,31の天面に半円球状のレ
ンズ59を付加したものである。図12に示すインナー
レンズに加工したものでは、反射効率の向上の他、チッ
プマウンター等での表面実装時に吸着固定しやすいとい
った効果をも併せ持っている。FIGS. 10 and 11 show the case where the sealing resins 11 and 31 are formed in a semi-cylindrical shape (so-called kamaboko type), and FIG.
13 is processed into a lens shape (indicated by a broken line) 58 by depressing a part of the top surface (indicated by a broken line), and the one shown in FIG. 59 is added. When processed into an inner lens as shown in FIG. 12, in addition to the improvement of the reflection efficiency, there is also an effect that it is easy to be fixed by suction at the time of surface mounting with a chip mounter or the like.
【0065】なお、本実施例では、絶縁基板に対して1
対のパターンを有する1チップLEDランプとしたが、
同手法で複数のパターンを形成し、複数個のLEDチッ
プを接続させると、容易に多色(複数LEDチップ)発
光のLEDランプを構成できる。In the present embodiment, 1 to the insulating substrate
Although it was a one-chip LED lamp having a pair of patterns,
When a plurality of patterns are formed by the same method and a plurality of LED chips are connected, an LED lamp that emits multicolor (multiple LED chips) can be easily configured.
【0066】[0066]
【発明の効果】本発明のチップ部品型LEDは、貫通穴
が形成された絶縁基板の裏面に、一方の配線パターンを
形成する金属薄板を添設し、貫通穴内の金属薄板上にL
EDチップを実装し、このLEDチップと絶縁基板の表
面に形成された他方の配線パターンとを電気的に接続し
て透明樹脂により封止した構造としたので、LEDチッ
プを直接金属薄板上に実装することから、従来の基板が
不要となり、その分薄型化が可能になるとともに、材料
コストの低減も図ることができる。また、LEDチップ
を実装する周辺部以外は絶縁基板で保持されているた
め、十分な強度が確保でき、金属細線の取り付けや樹脂
封止等も安定して行えるものである。According to the chip component type LED of the present invention, a metal sheet for forming one of the wiring patterns is provided on the back surface of the insulating substrate having the through-hole formed therein, and L is provided on the metal sheet in the through-hole.
The ED chip is mounted, and the LED chip and the other wiring pattern formed on the surface of the insulating substrate are electrically connected and sealed with a transparent resin. Therefore, the LED chip is mounted directly on a thin metal plate. This eliminates the need for a conventional substrate, thereby making it possible to reduce the thickness and to reduce the material cost. Further, since the portion other than the peripheral portion where the LED chip is mounted is held by the insulating substrate, sufficient strength can be secured, and the attachment of the thin metal wire and the resin sealing can be performed stably.
【0067】また、本発明のチップ部品型LEDは、上
記構成に加えて、貫通穴の内周面を、絶縁基板の裏面側
から表面側に向かって漸次拡開する傾斜面に形成したの
で、LEDチップの点灯時、側面に向かう光は傾斜面で
反射されて上方に向かうことから、上方への反射効率が
向上するものである。Further, in the chip component type LED of the present invention, in addition to the above-described configuration, the inner peripheral surface of the through hole is formed as an inclined surface that gradually expands from the back surface side to the front surface side of the insulating substrate. When the LED chip is turned on, light traveling toward the side surface is reflected by the inclined surface and travels upward, so that the upward reflection efficiency is improved.
【0068】また、本発明に係わるチップ部品型LED
の製造方法は、絶縁基板に貫通穴を開設した後、裏面に
金属薄板を添設する第1の工程と、無電解及び電解メッ
キ法を用いて前記絶縁基板の表面、裏面及び側面と前記
貫通穴の内周面とにメッキ層を形成する第2の工程と、
絶縁基板の裏面に添設した前記金属薄板及び絶縁基板の
表面、裏面及び側面に形成した前記メッキ層を分離して
1対の電極を形成する第3の工程と、前記貫通穴内の底
面である前記金属薄板に導電材料を用いてLEDチップ
を実装し、このLEDチップと前記絶縁基板の表面に形
成された他方の電極とを導電材料で接続する第4の工程
と、前記LEDチップと前記導電材料とを透光性の樹脂
にて封止する第5の工程とを備えた構成としたので、第
1の工程では、絶縁基板に貫通穴を開設した後、裏面に
金属薄板を添設することから、貫通穴は機械的なドリル
等によっても開けることができる。そのため、絶縁基板
を何枚も重ねて貫通穴を一度に開けることが可能となる
ことから、低コスト化が実現できる。また、絶縁基板の
裏面に金属薄板を添設する方法として、金属薄板を単に
接着剤で貼り合わせるといった簡単な方法を用いること
ができる。Further, a chip component type LED according to the present invention
Is a method of forming a through hole in an insulating substrate, then attaching a thin metal plate to the back surface, and forming the through hole in the insulating substrate using electroless and electrolytic plating methods. A second step of forming a plating layer on the inner peripheral surface of the hole;
A third step of forming the sheet metal and the surface of the insulating substrate, and separating the plating layer formed on the back surface and side surfaces a pair of electrodes that is additionally provided on the rear surface of the insulating substrate, the bottom surface of the through hole the LED chip is mounted using a certain conductive material in the metal sheet, a fourth step of coupling the LED chip and the insulating other electrodes formed on the surface of the substrate with a conductive material, and the LED chip And a fifth step of sealing the conductive material with a translucent resin. In the first step, a through-hole is formed in the insulating substrate, and then a thin metal plate is added to the back surface. Since it is provided , the through hole can also be opened by a mechanical drill or the like. For this reason, it is possible to form a through-hole at a time by stacking a number of insulating substrates, so that cost reduction can be realized. Further, as a method of additionally provided a metal sheet on the back surface of the insulating substrate, it is possible to use a simple method such as bonding with simply glue the sheet metal.
【0069】また、本発明に係わるチップ部品型LED
の製造方法は、表面のLEDチップを実装する部分を除
いて、絶縁基板の表面、裏面及び側面に金属層を形成す
る第1の工程と、レーザ光を前記絶縁基板のLEDチッ
プ実装部分に照射して、裏面の金属層まで達する貫通穴
を形成する第2の工程と、前記貫通穴の内周面に金属層
を形成する第3の工程と、絶縁基板の表面、裏面及び側
面に形成した前記金属層を分離して1対の電極層を形成
する第4の工程と、前記貫通穴内の底面である前記金属
層に導電材料を用いてLEDチップを実装し、このLE
Dチップと前記絶縁基板の表面に形成された他方の電極
層とを導電材料で接続する第5の工程と、前記LEDチ
ップと前記導電材料とを透光性の樹脂にて封止する第6
の工程とを備えた構成としたので、第2の工程では、レ
ーザ光を絶縁基板のLEDチップ実装部分に照射して、
裏面の金属層まで達する貫通穴を形成することから、レ
ーザ光で絶縁基板の対象エリアを除去すると、レーザ光
は中心部から広がるように絶縁部を除去していくため、
形成された貫通穴の内周面を同時に傾斜面(湾曲面)に
形成することができる。つまり、レーザ光を照射するだ
けで、貫通穴の形成の内周壁の傾斜面の形成とを同時に
行うことができるものである。Also, a chip component type LED according to the present invention
Is a first step of forming a metal layer on the front, back, and side surfaces of the insulating substrate except for a portion on the front surface where the LED chip is mounted, and irradiating a laser beam to the LED chip mounting portion of the insulating substrate. Then, a second step of forming a through hole reaching the metal layer on the back surface, a third step of forming a metal layer on the inner peripheral surface of the through hole, and a step of forming the through hole on the front surface, the back surface, and the side surface of the insulating substrate. A fourth step of separating the metal layer to form a pair of electrode layers, and mounting an LED chip using a conductive material on the metal layer serving as a bottom surface in the through hole;
A fifth step of connecting the D chip and the other electrode layer formed on the surface of the insulating substrate with a conductive material, and a sixth step of sealing the LED chip and the conductive material with a translucent resin.
In the second step, the laser light is applied to the LED chip mounting portion of the insulating substrate in the second step.
Since a through hole reaching the metal layer on the back side is formed, if the target area of the insulating substrate is removed with laser light, the laser light will remove the insulating part so as to spread from the center,
The inner peripheral surface of the formed through hole can be simultaneously formed as an inclined surface (curved surface). That is, only by irradiating the laser beam, the formation of the through hole and the formation of the inclined surface of the inner peripheral wall can be performed at the same time.
【図1】本発明の実施例1に対応したチップ部品型LE
Dの断面図である。FIG. 1 is a chip component type LE corresponding to a first embodiment of the present invention.
It is sectional drawing of D.
【図2】本発明の実施例1に対応したチップ部品型LE
Dの平面図である。FIG. 2 is a chip component type LE corresponding to the first embodiment of the present invention.
It is a top view of D.
【図3】図1に示す構造のチップ部品型LEDの製造方
法を説明するための工程図である。FIG. 3 is a process chart for explaining a method of manufacturing the chip component type LED having the structure shown in FIG.
【図4】本発明の実施例2に対応したチップ部品型LE
Dの断面図である。FIG. 4 is a chip component type LE corresponding to a second embodiment of the present invention.
It is sectional drawing of D.
【図5】本発明の実施例2に対応したチップ部品型LE
Dの平面図である。FIG. 5 is a chip component type LE corresponding to the second embodiment of the present invention.
It is a top view of D.
【図6】図4に示す構造のチップ部品型LEDの製造方
法を説明するための工程図である。6 is a process chart for explaining a method of manufacturing the chip component type LED having the structure shown in FIG.
【図7】本発明の実施例2に対応したチップ部品型LE
Dの変形例を示す断面図である。FIG. 7 shows a chip component type LE corresponding to the second embodiment of the present invention.
It is sectional drawing which shows the modification of D.
【図8】本発明の実施例3に対応したチップ部品型LE
Dの断面図である。FIG. 8 shows a chip part type LE corresponding to the third embodiment of the present invention.
It is sectional drawing of D.
【図9】図8に示す構造のチップ部品型LEDの製造方
法を説明するための工程図である。FIG. 9 is a process chart for explaining a method of manufacturing the chip component type LED having the structure shown in FIG.
【図10】図1及び図4に示すチップ部品型LEDのさ
らに変形例を示すもので、封止樹脂の形状を半円柱状に
形成した例を示す正面図である。FIG. 10 is a front view showing a further modification of the chip component type LED shown in FIGS. 1 and 4, and showing an example in which the shape of a sealing resin is formed in a semi-cylindrical shape.
【図11】図1及び図4に示すチップ部品型LEDのさ
らに変形例を示すもので、封止樹脂の形状を半円柱状に
形成した例を示す側面図である。FIG. 11 is a side view showing a further modification of the chip component type LED shown in FIGS. 1 and 4 and showing an example in which a sealing resin is formed in a semi-cylindrical shape.
【図12】図1及び図4に示すチップ部品型LEDのさ
らに変形例を示すもので、封止樹脂の天面の一部を凹ま
せてレンズ形状に加工した例を示す正面図である。FIG. 12 is a front view showing a further modification of the chip component type LED shown in FIGS. 1 and 4 and showing an example in which a part of the top surface of the sealing resin is recessed and processed into a lens shape.
【図13】図1及び図4に示すチップ部品型LEDのさ
らに変形例を示すもので、封止樹脂の天面に半円球状の
レンズを付加した例を示す正面図である。FIG. 13 is a front view showing a further modified example of the chip component type LED shown in FIGS. 1 and 4, in which a hemispherical lens is added to a top surface of a sealing resin.
【図14】従来のチップ部品型LEDの構造の一例を示
す断面図である。FIG. 14 is a cross-sectional view showing an example of the structure of a conventional chip component type LED.
【図15】従来のチップ部品型LEDの構造の一例を示
す断面図である。FIG. 15 is a sectional view showing an example of the structure of a conventional chip component type LED.
【図16】従来のチップ部品型LEDの構造の一例を示
す断面図である。FIG. 16 is a sectional view showing an example of the structure of a conventional chip component type LED.
1,21 LEDチップ 2,22 金属細線 4,9 配線パターン 5,6 金属薄板 7,8,27,28 金属層 10,30 絶縁基板 11,31 透明樹脂 12,32 貫通穴 121,321 傾斜面 11,31 透明樹脂 1,21 LED chip 2,22 Metal thin wire 4,9 Wiring pattern 5,6 Metal thin plate 7,8,27,28 Metal layer 10,30 Insulating substrate 11,31 Transparent resin 12,32 Through hole 121,321 Inclined surface 11 , 31 transparent resin
Claims (4)
プと電気的接続される配線パターンを形成してなるチッ
プ部品型LEDにおいて、 前記絶縁基板には貫通穴が形成され、該貫通穴が形成さ
れた絶縁基板の裏面に、前記配線パターンと接続される
金属薄板を添設し、該貫通穴内の底面における前記金属
薄板上に前記LEDチップを搭載してなる ことを特徴と
するチップ部品型LED。 An LED chip mounted on an outer surface of an insulating substrate.
Chip that forms a wiring pattern that is electrically connected to the
In the component-type LED, a through hole is formed in the insulating substrate, and the through hole is formed.
Connected to the wiring pattern on the back surface of the insulated substrate
A metal sheet is attached, and the metal on the bottom surface in the through hole is provided.
A chip component type LED comprising the LED chip mounted on a thin plate .
側から表面側に向かって漸次拡開する傾斜面に形成され
たことを特徴とする請求項1に記載のチップ部品型LE
D。2. The chip component type LE according to claim 1, wherein the inner peripheral surface of the through hole is formed as an inclined surface that gradually expands from the back surface to the front surface of the insulating substrate.
D.
金属薄板を添設する第1の工程と、無電解及び電解メッ
キ法を用いて前記絶縁基板の表面、裏面及び側面と前記
貫通穴の内周面とにメッキ層を形成する第2の工程と、
絶縁基板の裏面に添設した前記金属薄板及び絶縁基板の
表面、裏面及び側面に形成した前記メッキ層を分離して
1対の電極を形成する第3の工程と、前記貫通穴内の底
面である前記金属薄板に導電材料を用いてLEDチップ
を実装し、このLEDチップと前記絶縁基板の表面に形
成された他方の電極とを導電材料で接続する第4の工程
と、前記LEDチップと前記導電材料とを透光性の樹脂
にて封止する第5の工程とを具備することを特徴とする
チップ部品型LEDの製造方法。3. A first step of forming a through hole in the insulating substrate and then attaching a thin metal plate to the back surface, and the front surface, the back surface and the side surface of the insulating substrate using electroless and electrolytic plating methods. A second step of forming a plating layer on the inner peripheral surface of the hole;
A third step of forming the sheet metal and the surface of the insulating substrate, and separating the plating layer formed on the back surface and side surfaces a pair of electrodes that is additionally provided on the rear surface of the insulating substrate, the bottom surface of the through hole the LED chip is mounted using a certain conductive material in the metal sheet, a fourth step of coupling the LED chip and the insulating other electrodes formed on the surface of the substrate with a conductive material, and the LED chip And a fifth step of sealing the conductive material with a light-transmissive resin.
いて、絶縁基板の表面、裏面及び側面に金属層を形成す
る第1の工程と、レーザ光を前記絶縁基板のLEDチッ
プ実装部分に照射して、裏面の金属層まで達する貫通穴
を形成する第2の工程と、前記貫通穴の内周面に金属層
を形成する第3の工程と、絶縁基板の表面、裏面及び側
面に形成した前記金属層を分離して1対の電極層を形成
する第4の工程と、前記貫通穴内の底面である前記金属
層に導電材料を用いてLEDチップを実装し、このLE
Dチップと前記絶縁基板の表面に形成された他方の電極
層とを導電材料で接続する第5の工程と、前記LEDチ
ップと前記導電材料とを透光性の樹脂にて封止する第6
の工程とを具備することを特徴とするチップ部品型LE
Dの製造方法。4. A first step of forming a metal layer on the front, back and side surfaces of the insulating substrate except for a portion on the front surface where the LED chip is mounted, and irradiating the laser light to the LED chip mounting portion of the insulating substrate. Then, a second step of forming a through hole reaching the metal layer on the back surface, a third step of forming a metal layer on the inner peripheral surface of the through hole, and a step of forming the through hole on the front surface, the back surface, and the side surface of the insulating substrate. A fourth step of separating the metal layer to form a pair of electrode layers, and mounting an LED chip using a conductive material on the metal layer serving as a bottom surface in the through hole;
A fifth step of connecting the D chip and the other electrode layer formed on the surface of the insulating substrate with a conductive material, and a sixth step of sealing the LED chip and the conductive material with a translucent resin.
Chip type LE comprising the steps of:
Method for producing D.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06027956A JP3137823B2 (en) | 1994-02-25 | 1994-02-25 | Chip component type LED and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06027956A JP3137823B2 (en) | 1994-02-25 | 1994-02-25 | Chip component type LED and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07235696A JPH07235696A (en) | 1995-09-05 |
JP3137823B2 true JP3137823B2 (en) | 2001-02-26 |
Family
ID=12235349
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JP06027956A Expired - Fee Related JP3137823B2 (en) | 1994-02-25 | 1994-02-25 | Chip component type LED and method of manufacturing the same |
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