JP3492178B2 - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Semiconductor light emitting device and method of manufacturing the same

Info

Publication number
JP3492178B2
JP3492178B2 JP00510998A JP510998A JP3492178B2 JP 3492178 B2 JP3492178 B2 JP 3492178B2 JP 00510998 A JP00510998 A JP 00510998A JP 510998 A JP510998 A JP 510998A JP 3492178 B2 JP3492178 B2 JP 3492178B2
Authority
JP
Japan
Prior art keywords
resin
light emitting
semiconductor light
emitting device
stem
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP00510998A
Other languages
Japanese (ja)
Other versions
JPH10261821A (en
Inventor
嗣男 内野
博明 押尾
岩夫 松本
正 梅地
裕 永澤
聡 河本
Original Assignee
株式会社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP9-17370 priority Critical
Priority to JP1737097 priority
Application filed by 株式会社東芝 filed Critical 株式会社東芝
Priority to JP00510998A priority patent/JP3492178B2/en
Publication of JPH10261821A publication Critical patent/JPH10261821A/en
Application granted granted Critical
Publication of JP3492178B2 publication Critical patent/JP3492178B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an indicator,
Used for message boards, visual display devices, etc., sealed with resin
Semiconductor light emitting device with improved adhesion between body and resin stem
And a method of manufacturing the same. [0002] 2. Description of the Related Art One of the conventional semiconductor light emitting devices is printing.
Mount the semiconductor light emitting device on the wired printed circuit board.
And then closely attaches the case to the printed circuit board
And let the resin inject from the end to have the lens action
Obtained by forming a sealed body of transparent resin.
Was. On the other hand, a conventional surface-mount type semiconductor without a lens
The body light emitting device is as shown in FIG. That is, the tree
A concave portion 7 is formed in the grease stem 10, in which a concave portion 7 is formed.
The semiconductor light emitting device 1 is mounted. The inclination of this recess 7
The set side surface 8 acts as a light reflecting surface. This resin
Leads 21 and 22 are integrated with the stem 10.
Are the leads 21 and 22 made of an Fe-based or Cu-based thin metal plate?
Obtained by molding a lead frame composed of resin
The stem 10 is made of silica (S
iOTwo) And other polycarbonates containing fillers (PC)
Injection molding of thermoplastic resin such as
You. One ends of the leads 21 and 22 connected to the semiconductor light emitting element
The portion is disposed on the bottom surface of the concave portion 7 of the resin stem 10.
You. The semiconductor light emitting device 1 is a semiconductor light emitting device 1 containing silver (Ag) or the like.
Fixed to the lead 21 by the conductive paste 3 or the like.
You. The first electrode of the semiconductor light emitting device 1 is connected to the lead 21
Then, the second electrode is electrically connected to the lead 22.
The second electrode and the lead 22 are connected to each other by a gold (Au) wire or the like.
It is connected by a binding wire 4. Lead 21, 2
2 and the semiconductor light emitting element 1 and the bonding wire.
Light-transmitting resin sealing made of a thermosetting resin for covering the sheath 4
The body 5 is formed on the resin stem 10. [0004] However, as described above,
Mount semiconductor light-emitting devices on a flexible printed circuit board
The case to the printed circuit board.
Semiconductor light emission with resin sealing body formed by injecting resin
Equipment is expensive and leaks injected resin
You. Also, chipped or unfilled parts of the sealing body may be formed,
Bubbles and the like were generated, and a problem occurred in appearance.
In addition, use of expensive printed circuit boards and injection speed
It is also a problem that the production cost is high because the
there were. On the other hand, a surface-mounted semiconductor light emitting device shown in FIG.
The lens is not attached to the device, and the light collection efficiency
There was a problem of low. Furthermore, from thermosetting resin
Between the sealed resin body and the resin stem made of thermoplastic resin.
There was also a problem that the wearability was not good. The present invention has been made under such circumstances.
It is easy to form a lens,
Improves the adhesion with the grease stem to improve moisture resistance,
The light extraction efficiency has been improved by increasing the reflection efficiency.
Provided is a semiconductor light emitting device having a low cost and a method of manufacturing the same.
You. [0007] [Means for Solving the Problems] To solve the above problems,
For example, the semiconductor light emitting device of the present invention, a semiconductor light emitting element,
Cover the first lead, the second lead, and part of them
And a resin portion provided as described above.
And one end of the first lead and one end of the second lead
Are respectively led out of the resin part, and the resin
The portion includes the semiconductor light emitting device and a semiconductor light emitting device.
The other end of the first lead electrically connected to one electrode
And electrically connected to a second electrode of the semiconductor light emitting device.
And a recess for accommodating the other end of the second lead.
Filling the resin stem with the concave portion of the resin stem.
Light-transmitting resin, the entire upper surface of the resin stem, and
Covers the entire upper side that extends a specified distance from the upper surface of the
A projection made of a light-transmitting resin,
The bottom surface of the device is in contact with the first and second leads.
And a predetermined interval. In addition, the concave portion of the resin stem is filled.
Light-transmitting resin is a silicone resin
And Make sure that the silicone resin is filled with phosphor.
And features. Further, the semiconductor light emitting device is a GaN-based semiconductor light emitting device.
It is characterized by being made of a material. Or the resin
Has at least one through hole at the bottom of the recess
It is characterized by that. The resin stem is
It has at least one through hole that passes through the lower surface.
To sign. The protrusion constitutes a lens, and the protrusion
A vertical centerline and a vertical centerline of the resin stem
And the vertical center line of the semiconductor light emitting device.
Are configured to coincide with these centerlines.
And features. Further, the light emitted from the semiconductor light emitting device is
Phosphor that converts light into different wavelengths of light
It is characterized by the following. Here, the phosphor is formed of the resin
Contained in the resin part of the stem or the resin stem
Coated on the inner wall surface of the recess, or the semiconductor
Included in the mounting adhesive applied to the back of the light emitting device
Or the light transmissive resin filled in the concave portion
The light-transmitting contained or constituting the protruding portion
It is characterized by being contained in a resin. On the other hand, a horizontal direction of the concave portion of the resin stem is
The cross-sectional shape of the direction is the direction in which the first and second leads are led out.
Characterized in that the diameter is larger than the diameter in the direction perpendicular to this direction.
And Further, the first electrode of the semiconductor light emitting device includes:
Connected to the first lead by a bonding wire.
And a second electrode of the semiconductor light emitting device is connected to the second electrode.
Connected to the wire and the bonding wire.
Features. Alternatively, the concave portion of the resin stem is horizontal.
The center of the cross section in the direction is the horizontal of the resin stem.
Characterized in that it is offset from the center of the cross-sectional shape in the direction.
You. Furthermore, the second electrode of the semiconductor light emitting device is
2 and a bonding wire.
In the horizontal cross-sectional shape of the concave portion of the resin stem
The center is located at the center of the horizontal cross-sectional shape of the resin stem.
Characterized in that it is shifted in the lead-out direction of the second lead.
You. Further, a side surface of the inner wall of the recess forms a reflecting surface.
It is characterized by that. Further, the resin stem
The resin part is filled with at least 65% by weight of a thermoplastic resin.
35% by weight or less of a filler, wherein the filler is an acid.
Of titanium oxide, silicon oxide, aluminum oxide, etc.
Composed of reflective material, the content of titanium oxide
Is 10 to 15% by weight. A method for manufacturing a semiconductor light emitting device according to the present invention includes:
Lead frame having first and second leads and resin part
And the inside of the recess formed on the upper surface of this resin part
At the end of these leads
Forming a molded resin stem;
Mounting a semiconductor light emitting device having a second electrode,
Electrically connecting a first lead to the first electrode;
Electrically connecting the second lead to the second electrode;
Inject process resin and thermosetting resin into sealing case mold
And from the upper surface of the resin stem and the upper surface
Extending the upper side surface to the fluid tree in the sealing case mold
A step of immersing in a fat, and curing the fluid resin to form the resin
Forming a protruding part made of light-transmitting resin on the stem
And the protrusion is formed on the entire upper surface of the resin stem.
And the entire upper side surface extending a predetermined distance from the upper surface
So that the bottom surface of the protrusion is the first surface.
Not in contact with the second lead and has a predetermined interval
It is characterized in that it is formed so that Further, a method of manufacturing a semiconductor light emitting device according to the present invention.
Is a lead frame having first and second leads and a tree.
The resin part is integrally molded with the concave part formed on the upper surface of this resin part.
Position these leads so that they face each other
Forming a recessed resin stem;
And mounting a semiconductor light emitting device having a second electrode,
Electrically connecting the first lead to the first electrode
Electrically connecting the second lead and the second electrode.
Connecting the semiconductor light emitting device with the first and second resources.
A first thermosetting resin so as to cover the tip of the
Injecting the flowable resin into the recess,
Of injecting a second fluid resin of a thermosetting resin into a mold
And the first fluid resin in the concave portion of the resin stem.
Butting against the surface of the second fluid resin of the sealing case type
Then, the resin stem is connected to the second
2) dipping in a fluid resin, the first and second fluid
The resin is cured to form a light-transmissive resin sealing body in the recess.
And a light transmitting resin on the resin stem.
Forming a projecting portion, wherein the projecting portion is
The entire upper surface of the resin stem and a predetermined distance from this upper surface
That it is formed so as to cover the entire extending upper side surface.
Features. Here, the concave portion of the resin stem is opened.
With the top surface of the mouth facing down inside the sealing case mold
It is characterized by being immersed in the second fluid resin. Ma
In addition, the resin stem is an opening end of the sealing case type.
That the lead frame is soaked until it abuts
Features. Furthermore, at the opening end of the sealing case type
Is provided with a stopper, and the resin stem is
Crushed until the lead frame abuts the lid
It is characterized by the following. Alternatively, the resin stem can be
The resin stem is provided on this stopper part.
Note that the lead frame is crushed until it abuts.
To sign. On the other hand, the lead frame has the first
And a plurality of lead pairs including the second leads are formed.
It is characterized by having. Also, the case type for sealing,
It is characterized by being composed of a case type column in which a plurality is arranged in a line
I do. Further, for each lead pair of the lead frame,
Each of the resin stems is formed, and each of these resin stems is formed.
Each of the sealing cases
It is characterized by being immersed in a mold. Here, the first fluid resin and the second fluid resin
It is made of resin material different from fluid resin
And Also, the fluid flows into the concave portion of the resin stem.
Before filling the resin, the resin stem is irradiated with ultraviolet rays.
It is characterized by that. [0017] The semiconductor light emitting device of the present invention comprises a light transmitting resin.
Projecting part extends from the top of the resin stem to the entire upper side
So that the protrusions and the resin stem adhere well
Is improved. Ultraviolet irradiation is used for thermoplastic resin
The ability to combine the thermosetting resin with the light-transmitting resin has been improved.
Let The semiconductor light emitting element is provided with a vertical center line of the protrusion and
Match the vertical center line of the resin stem
In order to make l deviate from the center of the resin stem
The luminous efficiency can be further improved. Resin stem
Through-hole facilitates coupling with light-transmitting resin stem
I do. For the stopper, connect the protrusion to the lead frame (lead
C). [0018] BRIEF DESCRIPTION OF THE DRAWINGS FIG.
An embodiment will be described. First, referring to FIG. 1 to FIG.
An example will be described. FIG. 1 is a cross section of a semiconductor light emitting device.
FIG. 2 and FIG. 2 are plan views of the semiconductor light emitting device.
FIG. 1 is a sectional view of a portion along the line A-A ′. FIG.
Resin stem for explaining the position of the resin stem of the semiconductor light emitting element
FIG. 4 is a conceptual plan view of the system, and FIG. 4 is along the line A-A ′ shown in FIG.
It is sectional drawing of a part. As shown in FIG. 1, the resin stem 10 is
Leads 21 and 22 formed by molding a lead frame.
And a resin portion 10A formed integrally. Resin part 1
The opening at the top of 0A is wider than the bottom and slopes to the side.
A concave portion having a reflecting surface 8 is formed. Resin
The resin portion 10A of the stem 10 is, for example,
The lower part has a substantially square shape and the upper part has a substantially circular shape with a concave portion.
You. The ends of the leads 21 and 22 face the bottom of the recess.
Are located. The other ends of the leads 21 and 22 are opposite to each other.
It is led out of the resin part in the opposite direction. These leads
Is in the lead frame cut / forming process
Molded. GaP, GaAlAs, GaAsP, I
Semiconductor light emitting device made of nGaAlP, GaN, etc.
1 has a first and a second electrode (not shown),
At the bottom of the lead 21 at the end of the lead 21 with Ag @ 3
Mounted. Second electrode of semiconductor light emitting element 1 and lead 2
2 is connected by bonding wire 4 such as Au wire
Have been. A thermosetting resin is provided in the concave portion of the resin portion 10A.
The light-transmitting resin sealing body 5 is filled up to the opening position of the concave portion.
Is formed. On this resin stem 10, thermosetting
The protrusion 9 of the light-transmitting resin sealing body formed of resin is shaped
Has been established. The protrusion 9 is, for example, a lens
Used. The protrusion 9 includes the surface of the resin sealing body 5.
Upper surface of the resin stem 10 and an upper side continuing from the upper surface
And a surface portion. The semiconductor light emitting element 1 in the recess is
The projection 9 is arranged along the vertical center line O.
You. This center line O is the center of the resin stem 10 in the vertical direction.
It is also a line. However, the center of the recess is the resin stem 1
0 It is arranged and formed so as to deviate from the center of the upper surface
In this case, the vertical center line O 'of the concave portion is
I will not do it. With this structure, the semiconductor light emitting element 1 and the reflecting surface 8
And the reflection surface 8 acts more effectively than before.
By doing so, the light extraction efficiency is improved. Protrusion
9 covers the entire upper side surface (length x) of the resin stem 10.
Cover the upper side of the resin stem 10 by the thickness t
large. Then, the protrusion 9 and the lead 21 or 22 are in contact with each other.
Not touching, and from the protruding part 9 to the leads 21 and 22
It has a predetermined interval y. In the case of this embodiment, one side of the resin portion 10A
Even if the size is 2.4 mm or 4.5 mm
The thickness t of the protrusion 9 on the side surface of the resin stem is 2 m
m. At the time of manufacturing, it protrudes to the resin stem 10
Cut the lead frame after attaching the part 9
Semiconductor light emitting device by forming leads 21 and 22
To complete. The lead forming shape is Gullwin
Shape, J-bent type, etc.
You. Next, this embodiment will be described with reference to FIGS.
The structure of the resin stem of the semiconductor light emitting device of FIG.
This will be described in more detail. These figures show that the semiconductor light emitting device
It is a plan view and a sectional view of a mounted resin stem,
In order to clarify the position of the light emitting element, the display of the protrusion is omitted.
Has been abbreviated. The resin portion 10A of the resin stem 10 is substantially positive.
Square or substantially rectangular (for example, 3.0 × 3.4 mm
Or a size of about 5.0 × 5.4 mm).
The upper part including the upper part has a cylindrical shape. B-B 'shown in FIG.
The line and the C-C 'line are the center lines of the opposing sides. Figure
4 shows a vertical center line O of the resin stem 10.
I have. As described above, the upper surface 10 'of the resin stem 10 is substantially
It has a circular shape, and the concave portion 7 formed therein has a substantially elliptical shape.
It is circular (major axis R, minor axis r). Leads 21 and 22
One ends extend in opposite directions facing each other and face each other
Each is derived from the side to the outside. And lead
21 and 22 are the same as the center line B-B '.
You. The semiconductor light emitting device 1 is disposed in the recess 7 and
Arranged so that they also exist on the cores B-B ', C-C', and O.
Is placed. The recess 7 is located at the center of the upper surface 10 ′ of the resin stem.
Is not formed in the
Eccentric to the lead 22 side (the side from which the lead 21 extends)
From the recess to the recess H> Which lead is the leading side?
H). The eccentricity is caused by bonding.
This is to secure a wire area. That is, bonde
While securing sufficient space for the wiring
In FIG. 2, the distance between the reflecting surface 8 and the semiconductor light emitting element 1 is shown in FIG.
3 and FIG. 24 can be made smaller. Figure
Also in the conventional example shown, the semiconductor light emitting element 1 has the center line.
It is formed and arranged on B-B ', C-C', and O. I
However, the recess 7 is arranged at the center of the resin stem 10.
Therefore, a bonding area for the bonding wire 4 is secured.
Inevitably, the area of the concave portion 7 becomes large. Figure 3 and
Compared to FIG. 23, the recess of FIG.
(Resin stem is shown in FIGS. 3 and 23)
Same size as shown). That is, the bottom of the recess 7
The distance from the edge of the semiconductor light-emitting element 1 to the edge of
Is small (D> d). As described above, according to the present invention, the semiconductor light emission
The distance between the element 1 and the reflection surface 8 is made shorter than before, and the reflection surface
8 can act more effectively. That is,
More light is reflected by the reflecting surface 8 than before and
Can be started. As a result,
The extraction efficiency can be improved. Further, the projection 9 according to the present invention is constituted.
The light transmitting resin sealing body is made of a thermosetting resin, while
The resin portion 10A of the resin stem 10 is formed of a thermoplastic resin.
Has been established. Therefore, the adhesion between the two
Not good. However, according to the present invention, a light-transmitting resin
The protrusion 9 of the stopper is not only formed on the upper surface of the resin portion 10A,
Since the upper side surface following the upper surface is also covered, the resin stem and
The adhesive strength with the light-transmitting resin sealing body is improved, and the moisture resistance is improved.
Cracks due to temperature stress
It becomes. Further, a resin portion 10A is provided on the lead frame.
Because it is molded, it is easy to expose the resin stem 10
Yes, lead frame processing becomes possible. Also completed
When installing the assembled semiconductor light emitting device in a set, etc.
Also, the portability is improved. Next, a method for manufacturing a semiconductor light emitting device according to the present invention.
Will be described. 5 to 8 show a half of the first embodiment of the present invention.
It is explanatory drawing regarding the manufacturing method of a conductor light-emitting device. Sand
FIG. 5 is a flowchart showing the manufacturing process, and FIGS.
And FIG. 7 is a cross-sectional view of a step of forming a projecting portion of the light-transmitting resin.
FIG. 8 and FIG. 8 are a sectional view and a plan view of the resin stem. For forming the semiconductor light emitting device shown in FIG.
Then, the following processing is performed. First, the lead frame is
After loading the mold, inject the thermoplastic resin into the cavity.
It is filled by the traction molding method. This causes heat
Resin stem having resin portion 10A made of a plastic resin
(Resin stem) 10 is formed (FIG. 5A). resin
A concave portion is formed on the upper surface of the stem. In the recess
The leads that make up the lead frame are
Have been. One of the leads has a semiconductor light emitting element 1
). In this case, the first power of the chip
The electrodes are fixed to the poles by means of Ag dust or the like (FIG. 5 (2)).
One end of a bonding wire is connected to the second electrode of the chip.
Connect the other end of the bonding wire to the other lead
(FIG. 5 (3)). Next, the concave where the chip is mounted
The portion is filled with a thermosetting resin (FIG. 5D). Meanwhile, sealed
Inject the uncured fluid resin into the stop case mold (Fig. 5
(5)). Then, put the upper surface of the resin stem into a sealing case
The part is immersed (FIG. 5 (6)). About this processing step,
This will be described with reference to FIG. A fluid resin 12 is placed in the sealing case mold 11.
Has been injected. The resin stem 1
0 with its top side down, and use it as a stopper.
Until the cables 21 and 22 hit the sealing case mold 11
I will lower it. Leads 21 and 22 are now in case mold 11 for sealing
Keep the fluid resin in contact with it until it hardens,
When the grease is cured and the protruding portion 9 is formed, a sealing case mold
(FIG. 5 (7)). In this example use
Not yet, apply a mold release agent on the inner surface of the
You can put it. Projection 9 formed in this way
Can be used, for example, as a lens. afterwards
Cut the lead frame and shape the lead to the desired shape
(FIG. 5 (8)). Next, test the semiconductor light emitting device
Perform post-processing to complete the semiconductor light emitting device
(FIG. 5 (9)). FIG. 7 shows a second method of the steps (6) and (7).
It is shown. In this case, the sealing case mold 11
At least one protrusion 1 serving as a stopper around the opening
3 is provided. When the resin stem 10 comes down from above
Then, the leads 21 and 22 come into contact with the protrusion 13. Sand
Because the lead does not hit the sealing case,
Between the mold and the sealing case mold due to capillary action
It does not flow out (resin leakage). Semiconductor shown in FIG.
The body light emitting device was formed by this method,
Therefore, the bottom surface of the protrusion 9 is not in contact with the lead,
It has a predetermined interval y. This interval y is determined by
This corresponds to the height y of the projection 13 of the die 11. Of course
However, the spacer between the lead and the sealing case type
Should not be provided in a sealing case type as shown.
Alternatively, it may be formed on a resin stem. The protrusion 13 is made of resin
When the stem 10 is immersed, the lead (lead frame)
So that it does not come into contact,
It needs to be considered. FIG. 8 shows a third method of the steps (6) and (7).
It is shown. In this method, the resin stem 10
At least one through hole is formed in an area where no concave portion is formed.
A through hole 14 is formed. FIG. 8 shows four corners of the resin stem 10.
This shows an example in which through holes 14 are provided one by one. Such a configuration
Resin resin into the sealing case
The escape route of the injected fluid resin when the tem 10 is immersed
It can be. Next, a second semiconductor light emitting device according to the present invention will be described.
Will be described. FIG. 9 is a plan view and a sectional view of the semiconductor light emitting device.
FIG. 10 is a plan view showing a method for forming the semiconductor light emitting device.
It is sectional drawing of the semiconductor light-emitting device demonstrated. The half shown in FIG.
The conductive light emitting device has a configuration similar to that of FIG. Resin
The semiconductor light emitting element 1 is mounted on the
Is filled. And the resin stem
On the upper surface including the resin sealing body 10 of FIG.
A projection 9 made of a transparent resin is formed. The protrusion 9
Shape so as to cover the upper surface of the resin stem 10 and the following side surfaces.
Since it is formed, the adhesion between the resin stem 10 and the protruding portion 9
High. The semiconductor light emitting device 1 includes a protrusion 9 and a resin stem.
They are arranged on the ten vertical center lines. Also light
In order to increase the removal efficiency of the
Part closer to the side in the direction in which the lead 22 extends from the center.
Eccentrically formed and arranged (hence the lead
21 is farther away from the side in the direction derived.) Toes
While securing the space for bonding wires,
, The distance between the semiconductor light emitting element 1 and the reflecting surface 8
Is configured to be shorter. In order to form the protruding portion 9, the structure shown in FIG.
As described above, the sealing case mold 11 and the concave portion 7 of the resin stem 10 are formed.
With both the thermosetting resin and the flowing resin filled,
The resin stem 10 is sealed from the upper surface into a case-type fluidized resin 1.
Try to get inside 2. This way, the flow
Even if the resin shrinks when the resin cures, the sealing
Between the base mold 11 and the resin stem 10 (as shown in FIG. 10).
Areas A and B) will be replenished or absorbed.
You. Therefore, even after the resin is cured, the protrusion 9
The shape is maintained, and the joint with the resin stem 10 also has resin defects.
Does not occur. Also, it prevents leakage of the resin before curing to the outside.
The resin stem 10 and the case for sealing
There is no need to hit it. Therefore, according to the present invention
It is not necessary to secure the stability of the pressing force when
Combination of the sealing case mold 11 and the resin stem 10
Another advantage is that the alignment accuracy can be low. Sand
That is, according to the present invention, the accuracy of the parts in the combination part is low.
Good and easy to manufacture. Next, referring to FIG.
Another manufacturing method of the optical device will be described. FIG. 11 shows in FIG.
Semiconductor illustrating another method of forming a semiconductor light emitting device
It is sectional drawing of a light emitting device. Resin stem 10 and sealing cap
When butting against the fluid resin 12 in the mold 11,
Bubbles may enter. This embodiment provides such
High quality, designed to prevent air bubbles
Can be formed. Case type for sealing
Thermosetting resin in both the recess 11 and the resin stem 10
Of the flowing resin. Each liquid level becomes convex
Adjust the volume as needed. In such a state, the resin stem 1
0 into the case-shaped fluid resin 12 from the top
So that it fits. Both fluid resins are connected from the center of the convex surface.
The contact area expands toward the outer periphery. So bubbles
Can be sufficiently prevented. The liquid level is low
Either one may be a convex surface, and one may be a convex surface.
If the other is flat or concave, the same effect can be obtained.
Also, a through hole 15 for removing air bubbles is formed in the concave portion of the resin stem 10.
The same effect can be obtained even if it is formed. Next, a third semiconductor light emitting device according to the present invention will be described.
Will be described. Conventionally, in a surface mount type semiconductor light emitting device,
There are the following technical issues that need to be improved.
Due to the structure, it is difficult to form a lens.
Due to variations in the amount of resin, curing shrinkage of epoxy resin, etc.
As a result, the resin surface is depressed, so that the variation in luminance is large.
Generally, the distance between the semiconductor light emitting element and the reflective surface of the stem is long.
Especially, like the InGaAlP-based semiconductor light emitting device
When the active layer is near the element surface, the effect of the reflector is small.
It becomes. Low Tg (glass transition temperature) epoxy resin
Used, so that the resin sealing
Posi resin is used for bonding wire (Au wire).
Applying stress accelerates the disconnection. Low Tg
Epoxy resins have a low crosslinking density after curing and are poor in moisture resistance. For such a conventional semiconductor light emitting device,
Therefore, in the semiconductor light emitting device of this embodiment,
When a light transmitting resin protrusion is formed on the resin stem 10
In both cases, fill the recess of the resin stem 10 with silicone resin.
And the semiconductor light emitting element and A
Significantly reduce resin stress on u-line
it can. Further, the height of the reflection plate 8 of the resin stem 10 is increased.
Coming closer to the semiconductor light emitting device 1 and emitting from the side of the device
The reflected light is reflected upward to improve the light output. Further
High-output, high-quality reflector with a parabolic shape
Can be provided. The manufacturing method will be described with reference to FIG.
The description is as follows. First, iron (Fe)
Is formed from a lead frame made of copper (Cu).
The leads 21 and 22 are made of liquid crystal polymer (LCP), SPS,
Injection of high heat resistant thermoplastic resin such as PPS
The resin stem 10 is formed by shaping. Next, UV irradiation
And further, the semiconductor light emitting element 1 is
It is fixed by heating at about 00 ° C. for about 2 hours. Furthermore, Φ25 ~
The semiconductor light emitting element 1 and the lead 22 are connected with the Au wire 4 having a diameter of 30 μm.
Connect. Next, light-transmitting silicone resin is applied to the resin stem.
10 to completely cover the semiconductor light emitting device 1 and the Au wire 4.
Cover and heat it for about 5 hours at 150 ° C
5 is formed. Next, although not shown, it is used for a lens.
The protruding portion of the light-transmitting resin is formed in the same manner as in the first embodiment.
Formed on grease stem 10 and heat hardened at 125 ° C for about 6 hours
After the lead, the leads 21 and 22 are covered with solder, Sn, Au, etc.
After processing, the lead is cut and completed. FIG. 12 shows a resin mounting a semiconductor light emitting element.
It is sectional drawing of a stem. In this case, the reflecting surface is made conventional (FIG. 2).
2) closer to the semiconductor light-emitting element 1 and further to the reflection surface
Emitted from the side of the light emitting device by increasing the height of the
Light contributed as external emission light (side
The emitted light is separated by a run version starting from the active layer.
Therefore, the height of the reflective surface is high and the reflective surface is
The greater the reflection plate effect, the greater the effect). Here, the example shown
Is a flat reflector, but adopts a paraboloid of revolution
By doing so, the reflection effect is further increased. In this embodiment, the resin stem 1
Light-transmitting silicone resin as a material for sealing the recesses
Is used. In this way, using silicone resin
Can significantly reduce resin stress
The above effect can be obtained. That is, the conventional low Tg epoxy
For resin, thermal expansion of epoxy resin due to ambient temperature change
Or contraction puts stress on the Au wire 4, causing a long (1
When the temperature cycle is added, the Au line
No. 4 has a problem that fatigue disconnection occurs. Against this
Then, as in the present embodiment, the semiconductor light emitting element 1 and the Au line 4
Is completely covered with the silicon resin 5,
The resin stress of the sealing body 5 can be significantly reduced.
At the same time, the resin stress from the protrusion 9 (see FIG. 1)
It can be almost eliminated (thermal expansion and
But the stress is extremely small and should be ignored
Can be). Further, conventional products are made of epoxy resin and thermoplastic resin.
Low adhesion due to poor adhesion with resin stems
A oxy resin was used. In contrast, in this embodiment,
In this case, the resin stem is irradiated with ultraviolet rays as described above.
By activating the resin surface, high Tg epoxy
Adhesion can be improved even with resin, and semiconductors
The moisture resistance level of the light emitting device can be greatly improved.
You. Further, in this embodiment, Fe-based or
Uses a Cu-based lead frame, reducing costs
In addition, the process of integrally forming the resin stem with the lead frame
The cost of the semiconductor light emitting device can be reduced because it is performed inline.
You. In the present embodiment, the case type
Emitted from the light emitting element because the shape is a lens shape
The collected light is collected, and the brightness is greatly improved. Also lead
Various applications due to variations in forming shapes
Can respond. Furthermore, by changing the case type for sealing,
Lineup of semiconductor light emitting devices with various optical characteristics
it can. Next, the present invention will be described with reference to FIGS.
Another embodiment will be described. Construct conventional resin stem
The filler contained in the thermoplastic resin is silica (SiOTwo)But
Primary, low reflectivity, resulting in low light output
There was a problem of becoming. Generally, epoxy resin
There is no chemical bond between thermosetting resin such as etc. and thermoplastic resin
Poor adhesion, use low Tg epoxy resin
Therefore, there was a problem that the moisture resistance was poor. In this embodiment, on the other hand, FIG.
Resin of Resin Stem 10 Used in Semiconductor Light Emitting Device
10A is an improved composition. That is, this implementation
In the example, a reflector composed of a thermoplastic resin and a filler
The resin stem provided with is filled with more than 65% of thermoplastic resin
Less than 35% by weight, and the filler is titanium oxide
Aluminum oxide, titanium oxide is weight
Resin stem characterized by being 20% or less in ratio
use. In addition, as the thermoplastic resin material, a liquid crystal
Use a high heat resistant resin such as Lima (LCP). further,
It is characterized by irradiating ultraviolet rays to the resin stem after molding.
I do. An outline of the manufacturing method is as follows.
It is. First, a Fe-based or Cu-based 0.1
Prepare a thin metal plate lead frame of ~ 0.2mm
You. Next, TiO 2 is placed on the lead frame.TwoThe main component
High heat resistance of LCP, PPS, SPg, etc. containing filler
Injection molding using a thermoplastic resin
Thus, the resin stem 10 is formed. This resin stem
A semiconductor light emitting device 1 such as GaP is coated with an Ag paste 3
After fixation (about 2 hours at 200 ° C), extra fine (Φ25
Φ30 μm) bonding wire (Au wire) 4
Ear bonding. Then, light-transmissive epoxy resin
Into the concave portion 7 of the resin stem 10 (the side
And maintain at about 120 ° C for about 8 hours
To form a sealing body 5 by heat curing.
reference). Then, the protrusion 9 made of the same material as that of the sealing body 5 is described above.
Formed on the upper part of the resin stem 10 by any of the above methods
I do. Then, the lead portion protruding from the resin portion 10A
The package is externally treated with solder or Ag. And the lead
The frame is cut, molded, formed into a predetermined shape, and the lead 2
1 and 22 are formed to complete the semiconductor light emitting device (FIG. 1)
reference). The semiconductor light emitting device 1 is not limited to the upper surface.
In addition, light is emitted from all sides. So, the four-sided reflector
(That is, the reflection surface of the concave portion 7) is improved.
As described above, as a filler, highly reflective TiOTwoetc
Use FIG.TwoContent (Wt%)
It shows a change in reflectance (%) with respect to the reflectance. here
And TiOTwoThe content of (titanium oxide) is 10% or more
It can be seen that the reflectance tends to be saturated. On the other hand, TiO
TwoIs expensive and at high content (30% or more)
Fat molding tends to be difficult. Therefore, TiOTwo1
0 to 15% content and the remainder is SiOTwo(Siri
F) AlTwoOThree(Alumina) etc. used as filler
To form a resin stem that is inexpensive and has high reflectivity.
Can be achieved. On the other hand, a thermosetting resin and a thermoplastic resin are generally used.
Because there is no chemical bond with fat, poor adhesion and temperature change
When it is added, the tendency becomes more remarkable. As a countermeasure,
Injection molding of thermoplastic resin to form resin stem
After formation, the surface is irradiated with ultraviolet light. After that, Epoki
By injecting and heating a thermosetting resin such as resin,
FIG. 14 shows that the adhesion is improved. purple
External radiation dose (mJ / cmTwo) Increase the adhesive strength
(N / cmTwo) Increases and peel mode generation amount (%) decreases
The effect is small, and the effect of UV irradiation is clear. The reason for this is that resin irradiation is
C-C 'and C-H bonds on the surface of the
G-bonds (unbonded hands), followed by thermosetting resin
By injecting, heating and curing, the thermoplastic resin
Dangling bond contributes to chemical bonding with thermosetting resin
It is thought that it is because. As a result,
Adhesion can be increased about twice. Conventionally, close contact
Low Tg familiar with thermoplastic resin to improve the properties
Used thermosetting resin, but the
Low gin and margin for reliability
There were few. On the other hand, according to the present embodiment,
High Tg thermosetting resin with high margin can be used
And the margin for reliability is also significantly improved. Next, referring to FIG. 15 and FIG.
Another embodiment will be described. In this embodiment,
As a semiconductor light emitting device, for example, a material such as GaN
Blue light emitting element or ultraviolet light emitting element
It is something. FIG. 15 shows the semiconductor light emitting device of this embodiment.
FIG. 16 is a cross-sectional view, and FIG.
FIG. 15 is a sectional view of a portion along the line A '. In the semiconductor light emitting device illustrated in FIG.
Has an n-side electrode and a p-side electrode on the upper surface of the semiconductor light emitting element 1 '.
Formed by bonding wires 4
Connected to the nodes 21 and 22. Back side of light emitting element 1 '
Usually has an insulating substrate (eg, a sapphire substrate)
It is exposed. Therefore, one of the leads 21 and 22
Even if the light emitting element 1 is mounted thereon, an electric short circuit occurs.
Absent. In the illustrated example, the semiconductor light emitting device
1 ′ is such that each side is approximately
It is mounted in a state of being inclined at about 45 degrees. But,
The present invention is not limited to this. For example, this
In addition, it was mounted at an angle other than 45 degrees
Even if it is mounted without tilting as illustrated in FIG.
good. In the illustrated embodiment, the light emitting element 1 '
A first electrode and a second electrode are formed on the upper surface of the
A wire 4 is connected to these electrodes. Therefore, the resin part
The recesses of 10A extend in the connection direction of the respective wires 4.
It has the shape. In other words, each wire 4 bond
While emitting light in other directions
The distance between the element 1 and the reflection surface 8 is configured to be small.
ing. With this configuration, the light emitting element 1 ′
Works effectively on the light emitted from the side of the surface
And can be taken out with high efficiency. Here, unlike the example shown, the light emitting element
1 is a p-side or n-side power supply on the back side as in the above-described embodiment.
In the case of a structure having a pole, the light emitting element 1
May be configured as described above.
Such examples include, for example, SiC-based materials and ZnS
The case where a light emitting element of an e-based material or a BN-based material is used will be described.
be able to. That is, in these cases,
Since an n-type semiconductor substrate is used, it is illustrated in FIG.
Connections are made as follows. In this embodiment, a phosphor is further added.
Is emitted from the semiconductor light emitting element 1 ′
A new structure that converts light emission to different wavelengths and takes them out
Semiconductor light emitting device can be realized. For example, the resin portion 10A
By mixing an appropriate phosphor at the time of molding
The light from the light emitting element 1 'incident on the reflecting surface 8 of the stem is a wave.
The sealed body 5 and the lens are converted into light having different wavelengths
9 and taken out of the light emitting device. Types of phosphor used in this embodiment
Is a YAG: Ce-based fluorescent light excited by a blue wavelength.
Light body (yellow light emission) or Y excited by ultraviolet lightTwo0Two
S: Eu (red emission), (Sr, Ca, Ba, Eu)Ten
(POFour)6・ ClTwo(Blue light emission), 3 (Ba, Mg,
Eu, Mn) O · 8AlTwoOThree(Green emission)
Can be YAG: Ce phosphor and blue light emitting element
When combined, the yellow emission from the phosphor and the light emitting element
White light emission can be extracted by mixing
it can. In addition, red, green, and blue light-emitting phosphors
White light emission can be obtained by mixing at an appropriate ratio.
it can. The light emitting device used in the present invention is
As described above, blue light emitting device of GaN-based material or ultraviolet light
Light emission and the like. Of course, SiC materials and ZnS
An e-material or BN-based light emitting element may be used.
No. The phosphor is formed on the surface (reflection surface 8) of the resin portion 10A.
A similar effect can be obtained by applying the composition to the surface.
In that case, especially, the stem 10 is made of titanium oxide or zinc oxide.
A suitable amount of a substance that reflects ultraviolet light to blue light
In particular, some light from the light emitting element that has passed through the phosphor coating layer
Is reflected at a high reflectance on the reflecting surface 8 and again the phosphor coating layer
Wavelength conversion efficiency and external extraction of light
A semiconductor light emitting device with high efficiency can be realized. The mounting adhesive 3 for the light emitting element 1
(Ag paste, etc.) mixed with a phosphor,
Similar effects can be obtained. That is, the back surface of the element 1
Or the luminescence emitted in the direction of the back contained the phosphor
When entering the adhesive 3, the wavelength is converted and light of different wavelength
Through the sealing body 5 and the lens 9 to the outside of the light emitting device
Taken out. Further, the above-mentioned phosphor is mixed with the sealing body 5.
Can obtain the same effect. FIG. 17 shows the process.
A flow chart is shown (FIG. 17 (3 ″)).
Predetermined fluorescence on cone resin, epoxy resin, etc.)
The body is mixed at an appropriate mixing ratio and thermoset.
The sealing body 5 containing the phosphor can be formed.
In this case, the sealing body 5 is formed before the lens 9 is formed.
If the fluorescent material mixed in the sealing body 5
During the molding of the lens, only the inside of the sealing body 5 does not diffuse toward the lens.
It can be contained. When curing the sealing body 5,
Adjust the particle size of the phosphor and the viscosity of the sealing resin before curing.
Preferably, the phosphor precipitates after the resin is injected, and the sealing body 5
Of the light emitting element 1 'or the mounting surface of the light emitting element 1'.
It is also possible. By allowing the phosphor layer to precipitate
Is formed into a high-density thin film and the thickness of the thin film layer is optimized
Wavelength conversion efficiency and light extraction efficiency
It can be optimized. Almost all of the light emitted from the light emitting element 1 '
Is incident on the phosphor-containing sealing body 5, so that the resin portion 10A
Wavelength conversion more efficiently than containing it in the adhesive 3
can do. Similarly, the above-mentioned firefly is attached to the lens 9.
A similar effect can be obtained even if a light body is included. Seal
As in the case of the stationary body, the lens material (epoxy resin, etc.)
The predetermined phosphor is mixed at an appropriate mixing ratio in advance,
The phosphor-containing lens 9 is formed by curing and molding.
Can be Alternatively, before injecting and molding the sealing body 5,
A phosphor is coated on the surface of the light emitting element 1 '.
Or emits another solvent or dispersion medium mixed with phosphor
It may be pre-dipped so as to surround the element 1. this
In some cases, the light emitting element is mounted before mounting the light emitting element 1 '.
A fluorescent material may be applied to the light emitting element 1 '.
After the coating, a phosphor may be applied to the surface. FIG. 17 shows a flowchart of this process (FIG. 17).
(1 ') or (3')). When applying phosphor,
By adjusting the coating thickness, the wavelength conversion efficiency and light
The extraction efficiency can be optimized. Next, referring to FIG. 18 and FIG.
Another embodiment will be described. In this embodiment,
So-called flip-chip type as a semiconductor light emitting element
Are used. FIG. 18 shows a semiconductor device according to this embodiment.
FIG. 19 is a cross-sectional view of the body light emitting device, and FIG.
FIG. 18 is a cross-sectional view of a portion taken along line A-A ′ in FIG. In the semiconductor light emitting device illustrated in FIG.
, The semiconductor light emitting element 1 ″ has an n-side electrode and a p-side
Electrodes are formed and directly connected to the leads 21 and 22.
ing. The light emitted from the light emitting element 1 ″
Taken out to the outside. In this embodiment, the semiconductor
Wire connecting body light-emitting element 1 "and leads 21 and 22
Is unnecessary, so bonding around light emitting element 1 "
There is no need to reserve space. As a result, the light emitting element
Distance to reflective surface 8 in any direction around 1 "
Can be minimized. That is, the light emitting element
Reflective surface for light emitted from any side of 1 "
8 works effectively and is taken out with extremely high efficiency
Will be able to do it. Here, the light emitting element 1 ″ is, for example, Ga
P, GaAlAs, GaAsP, InGaAlP, Ga
It can be a semiconductor light emitting device made of N or the like.
You. In particular, GaN-based materials, SiC-based materials, ZnSe-based materials
In the case of a light emitting element using a material or a BN-based material,
As described above with reference to FIGS.
The body into the resin portion 10A of the resin stem 10 or
It is applied on the inner wall surface of the concave portion of the oil portion 10A or
Mixed, mixed into lens 9, or semiconductive
By appropriately applying to the surface of the body light emitting element 1 ″,
It is also possible to convert the wavelength and take it out. Each of the embodiments described above is based on a single semiconductor device.
The method of manufacturing the optical device has been described.
As shown in 21, a plurality of semiconductor light emitting devices are manufactured at the same time.
can do. That is, the lead frame 2 (FIG. 2)
0) Each lead pair 21 and 22 has a resin portion.
10A is attached, and a plurality of sealing case molds 11 are arranged in series.
Light transmission by making the case series connected to this
Mass production by forming protruding part of conductive resin on resin stem
(FIG. 21). Used in the previous embodiment
Lead frame width (a pair of opposing leads and frame
The total length of the head and the head is about 55 mm.
Performs sufficient alignment between the case series and the lead frame
For example, the protrusion can be accurately attached to the resin stem 10.
it can. [0068] The present invention is implemented in the form described above.
And has the effects described below. That is,
Akira, with the above configuration, the protrusion of light-transmitting thermosetting resin
Significantly increase the adhesion between the part and the thermoplastic resin stem.
You. As a result, the reliability of the semiconductor light emitting device is remarkably increased.
improves. Further, according to the present invention, a connection to a light emitting element is provided.
While securing the wire bonding area
The distance between the light emitting element and the reflective surface of the resin stem in the direction
It is configured to be smaller. Configure like this
As a result, light emitted from the side of the light emitting element
Effective use of reflective surface to extract light to the outside with high efficiency
Will be able to Further, according to the present invention, a resin stem tree
High reflectivity by using a unique composition for the grease material
It is possible to provide an inexpensive resin stem.
Further, the present invention relates to a lead forming shape variator.
Various applications can be handled depending on the application. In addition,
Semiconductor with various optical characteristics by changing the base type
A lineup of body light emitting devices is available. On the other hand, according to the present invention, a predetermined phosphor is
Mixed into the resin part of the grease stem or the inner wall of the concave part of the resin part
On the surface, mixed with the sealing body, or mixed with the lens.
Into the surface of the semiconductor light emitting device
By applying the light, the light emitted from the light emitting element
It can be converted and taken out. As a result
For example, using a blue or ultraviolet light emitting element, red, green
Colors or other intermediate colors or multiple wavelengths of these
Light can be easily obtained, and the application range of the semiconductor light emitting device
The enclosure can be greatly expanded. As described above, according to the present invention, the light
Extraction efficiency, high reliability, and emission wavelength range
Semiconductor light-emitting devices with a wide range and an extremely wide range of applications
Can provide the manufacturing method of industrial
The benefits are enormous.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a semiconductor light emitting device of the present invention (A-
A part along A 'line). FIG. 2 is a plan view of the semiconductor light emitting device of the present invention. FIG. 3 is a conceptual plan view of the resin stem of the present invention. FIG. 4 is a sectional view of a portion along the line AA ′ in FIG. 3; FIG. 5 is a flowchart of a manufacturing process of the semiconductor light emitting device of the present invention. FIG. 6 is a sectional view of a sealing case mold and a resin stem of the present invention. FIG. 7 is a cross-sectional view and a plan view of a sealing case mold of the present invention. FIG. 8 is a sectional view and a plan view of the resin stem of the present invention. FIG. 9 is a plan view and a cross-sectional view of the semiconductor light emitting device of the present invention. FIG. 10 is a sectional view of a sealing case mold and a resin stem of the present invention. FIG. 11 is a sectional view of a sealing case mold and a resin stem of the present invention. FIG. 12 is a sectional view of the resin stem of the present invention. FIG. 13 is a characteristic diagram showing a change in reflectance depending on the composition ratio of titanium oxide of the present invention. FIG. 14 is a characteristic diagram showing a change in adhesion due to ultraviolet irradiation according to the present invention. FIG. 15 is a cross-sectional view of the semiconductor light emitting device of the present invention (portion along the line AA ′ in FIG. 16). FIG. 16 is a plan view of a semiconductor light emitting device of the present invention. FIG. 17 is a flowchart of a manufacturing process of the semiconductor light emitting device of the present invention. FIG. 18 is a cross-sectional view of the semiconductor light emitting device of the present invention (portion along line AA ′ in FIG. 19). FIG. 19 is a plan view of a semiconductor light emitting device of the present invention. FIG. 20 is a plan view of a lead frame used in the present invention. FIG. 21 is a sectional view of a case-type ream and a series of resin stems of the present invention. FIG. 22 is a sectional view of a conventional semiconductor light emitting device. FIG. 23 is a plan view of a conventional resin stem. FIG. 24 is a sectional view of a portion along the line AA ′ in FIG. 23; [Description of Signs] 1, 1 ', 1 "Semiconductor light emitting element 2 Lead frame 3 Ag paste 4 Bonding wire (Au wire) 5 Sealing body of light transmitting resin (silicon resin, epoxy resin) 7 Concave section 8 of resin stem 8 Reflecting surface 9 Projecting portion (lens) of light-transmitting resin 10 Resin stem 10A Resin portion 11 Case mold 12 for sealing Flowing resin 13 Projecting portions 14, 15 Through holes 21, 22 Lead

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiroshi Nagasawa 1-10-1 Shimotsu, Kokurakita-ku, Kitakyushu-shi, Fukuoka Prefecture Inside the Kitakyushu Plant, Toshiba Corporation (72) Tadashi Umeji 1, Shimotsutsu, Kokurakita-ku, Kitakyushu-shi, Fukuoka -10-1 Toshiba Corporation Kitakyushu Plant (72) Inventor Satoshi Kawamoto 72 Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Prefecture Toshiba Corporation Kawasaki Office (56) References JP-A-3-11771 (JP, A) Japanese Unexamined Patent Application Publication No. Hei 3-119969 (JP, A) Japanese Unexamined Patent Application Publication No. 4-329680 (JP, A) Japanese Unexamined Patent Application Publication No. 5-55636 (JP, A) Japanese Unexamined Patent Application Publication No. 5-26698 (JP, A) Japanese Unexamined Patent Application Publication No. 5-347435 (Japanese) JP, A) JP-A-7-22653 (JP, A) JP-A-7-99345 (JP, A) JP-A-7-106634 (JP, A) JP-A-8-45972 (JP, A) JP 49-71886 (JP, A) JP-A-64-2380 ( JP, A) JP-A 4-109556 (JP, U) JP-A 5-63068 (JP, U) JP-A 6-29159 (JP, U) JP-A 6-722263 (JP, U) US Patent US Pat. No. 4,152,624 (US, A) US Pat. No. 5,043,716 (US, A) US Pat. No. 5,266,817 (US, A) West German Patent Application Publication No. 4340864 (DE, A1) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 33/00 H01L 21/56 H01L 23/28

Claims (1)

  1. (57) Claims 1. A resin stem having a semiconductor light emitting element, a first lead, a second lead, and a resin portion provided so as to cover a part thereof. Wherein one end of the first lead and one end of the second lead are respectively led out of the resin portion, and the resin portion includes the semiconductor light emitting element and a first light emitting element of the semiconductor light emitting element. A recess for accommodating the other end of the first lead electrically connected to an electrode and the other end of the second lead electrically connected to a second electrode of the semiconductor light emitting device; A resin stem, a light-transmitting resin filled in the concave portion of the resin stem, and a light-transmitting resin covering the entire upper surface of the resin stem and the entire upper side surface extending to a predetermined distance from the upper surface. And a protrusion, wherein the bottom surface of the protrusion is A semiconductor light emitting device, which is not in contact with the first and second leads and has a predetermined interval. 2. The semiconductor light emitting device according to claim 1, wherein the light transmitting resin filled in the concave portion of the resin stem is a silicon resin. 3. The semiconductor light emitting device according to claim 2, wherein said silicon resin is filled with a phosphor. 4. The semiconductor light emitting device according to claim 2, wherein said semiconductor light emitting element is made of a GaN-based material. 5. The resin stem according to claim 1, wherein the resin stem has at least one through hole at a bottom of the recess.
    13. The semiconductor light emitting device according to claim 1. 6. The semiconductor light emitting device according to claim 1, wherein said resin stem has at least one through hole extending from an upper surface to a lower surface. 7. The projection forms a lens, and a vertical center line of the projection matches a vertical center line of the resin stem, and a vertical center line of the semiconductor light emitting element is 7. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is configured to coincide with these center lines. 8. The semiconductor light emitting device according to claim 1, further comprising a phosphor that converts light emitted from said semiconductor light emitting element into light of a different wavelength. 9. The semiconductor light emitting device according to claim 8, wherein said phosphor is contained in said resin portion of said resin stem. 10. The semiconductor light emitting device according to claim 8, wherein said phosphor is applied on an inner wall surface of said concave portion of said resin stem. 11. The semiconductor light emitting device according to claim 8, wherein said phosphor is contained in a mounting adhesive applied to a back surface of said semiconductor light emitting element. 12. The semiconductor light emitting device according to claim 8, wherein said phosphor is contained in said light transmitting resin filled in said concave portion. 13. The semiconductor light emitting device according to claim 8, wherein said phosphor is contained in said light transmitting resin forming said projecting portion. 14. A horizontal cross-sectional shape of the concave portion of the resin stem, wherein a diameter of the lead-out direction of the first and second leads is larger than a diameter in a direction perpendicular to this direction. 14. The semiconductor light emitting device according to any one of 1 to 13. 15. A first electrode of the semiconductor light emitting device is connected to the first lead by a bonding wire, and a second electrode of the semiconductor light emitting device is connected to the second lead by a bonding wire. 15. The semiconductor light emitting device according to claim 14, wherein: 16. The semiconductor light emitting device according to claim 14, wherein the center of the concave portion of the resin stem in the horizontal sectional shape is shifted from the center of the horizontal sectional shape of the resin stem. 17. A second electrode of the semiconductor light-emitting element is connected to the second lead by a bonding wire, and a center of the concave portion of the resin stem in a horizontal cross-sectional shape is a horizontal cross-section of the resin stem. 17. The semiconductor light emitting device according to claim 16, wherein the semiconductor light emitting device is deviated from a center of the shape in a leading direction of the second lead. 18. The semiconductor light emitting device according to claim 1, wherein a side surface of the inner wall of the recess forms a reflection surface. 19. The resin part of the resin stem comprises a thermoplastic resin of 65% by weight or more and a filler of 35% by weight or less, wherein the filler is made of titanium oxide, silicon oxide, aluminum oxide or the like. The semiconductor light emitting device according to any one of claims 1 to 18, comprising a highly reflective material, wherein the content of the titanium oxide is 10 to 15% by weight. 20. A resin in which a lead frame having first and second leads and a resin portion are integrally molded, and the ends of these leads are arranged to face each other in a recess formed on the upper surface of the resin portion. Forming a stem; mounting a semiconductor light emitting device having first and second electrodes in the recess; electrically connecting the first lead to the first electrode; A step of electrically connecting the lead to the second electrode; a step of injecting a flowing resin of a thermosetting resin into a sealing case mold; an upper surface of the resin stem and an upper side surface extending from the upper surface A step of immersing the resin in the sealing case mold; and a step of curing the flowable resin to form a projection made of a light-transmitting resin on the resin stem. Is the entire top surface of this resin stem And so as to cover the entire upper side surface extending to a predetermined distance from the upper surface, and so that the bottom surface of the protrusion is not in contact with the first and second leads and has a predetermined interval. A method for manufacturing a semiconductor light emitting device, comprising: 21. A resin in which a lead frame having first and second leads and a resin portion are integrally molded, and the ends of these leads are arranged so as to face each other in a concave portion formed on the upper surface of the resin portion. Forming a stem; mounting a semiconductor light emitting device having first and second electrodes in the recess; electrically connecting the first lead to the first electrode; Electrically connecting a lead and the second electrode; and applying a first fluid resin of a thermosetting resin to cover the semiconductor light emitting element and the tips of the first and second leads. A step of injecting into the recess, a step of injecting a second flowing resin of a thermosetting resin into a sealing case mold, and the step of injecting the first flowing resin in the recess of the resin stem into the sealing case mold Butted against the surface of the second fluid resin, The resin stem is inserted into the second case in the sealing case mold.
    Dipping in a flowable resin; curing the first and second flowable resins to form a light-transmitting resin sealing body in the recess; and a protrusion made of a light-transmitting resin on the resin stem Forming a projecting portion so as to cover the entire upper surface of the resin stem and the entire upper side surface extending to a predetermined distance from the upper surface. . 22. The resin stem, wherein the upper surface where the concave portion is open faces downward, and
    22. The method for manufacturing a semiconductor light emitting device according to claim 20, wherein the semiconductor light emitting device is dipped in a fluid resin. 23. The semiconductor light emitting device according to claim 20, wherein said resin stem is immersed until said lead frame comes into contact with an opening end of said sealing case type. Device manufacturing method. 24. A sealing device according to claim 23, wherein a stopper portion is provided at an open end of said sealing case, and said resin stem is crushed until said lead frame comes into contact with said stopper portion. 13. The method for manufacturing a semiconductor light emitting device according to item 5. 25. The semiconductor light emitting device according to claim 23, wherein a stopper is provided on said resin stem, and said resin stem is crushed until said lead frame comes into contact with said stopper. Production method. 26. The semiconductor light emitting device according to claim 20, wherein a plurality of lead pairs comprising said first and second leads are formed on said lead frame. Device manufacturing method. 27. The sealing case mold according to claim 20, wherein a plurality of case mold rows are arranged in a row.
    A method for manufacturing a semiconductor light emitting device according to any one of claims 26 to 26. 28. The resin stem is formed for each lead pair of the lead frame, and each of these resin stems is immersed in a corresponding sealing case mold of the case mold row. A method for manufacturing a semiconductor light emitting device according to claim 26 or 27. 29. The method according to claim 20, wherein the first fluid resin and the second fluid resin are made of different resin materials. . 30. The semiconductor light emitting device according to claim 20, wherein the resin stem is irradiated with ultraviolet rays before filling the concave portion of the resin stem with the fluid resin. Device manufacturing method.
JP00510998A 1997-01-15 1998-01-13 Semiconductor light emitting device and method of manufacturing the same Expired - Fee Related JP3492178B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9-17370 1997-01-15
JP1737097 1997-01-15
JP00510998A JP3492178B2 (en) 1997-01-15 1998-01-13 Semiconductor light emitting device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00510998A JP3492178B2 (en) 1997-01-15 1998-01-13 Semiconductor light emitting device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH10261821A JPH10261821A (en) 1998-09-29
JP3492178B2 true JP3492178B2 (en) 2004-02-03

Family

ID=26339009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP00510998A Expired - Fee Related JP3492178B2 (en) 1997-01-15 1998-01-13 Semiconductor light emitting device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP3492178B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300573A (en) * 2007-05-30 2008-12-11 Toshiba Corp Light emitting device
US8283675B2 (en) 2009-04-10 2012-10-09 Sharp Kabushiki Kaisha Light emitting device

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
JP2001168400A (en) * 1999-12-09 2001-06-22 Rohm Co Ltd Chip type light emitting device with case and its manufacturing method
JP2001298216A (en) * 2000-04-12 2001-10-26 Matsushita Electric Ind Co Ltd Surface-mounting semiconductor light-emitting device
US6621211B1 (en) * 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
JP3614776B2 (en) 2000-12-19 2005-01-26 シャープ株式会社 Chip component type LED and its manufacturing method
JP4101468B2 (en) 2001-04-09 2008-06-18 株式会社東芝 Method for manufacturing light emitting device
JP2002314138A (en) 2001-04-09 2002-10-25 Toshiba Corp Light emitting device
DE10153259A1 (en) 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelectronic component
US6835957B2 (en) * 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
TWI237546B (en) * 2003-01-30 2005-08-01 Osram Opto Semiconductors Gmbh Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP4543712B2 (en) * 2004-03-17 2010-09-15 日亜化学工業株式会社 Method for manufacturing light emitting device
DE102004040468A1 (en) 2004-05-31 2005-12-22 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and housing main body for such a device
DE102004053116A1 (en) * 2004-11-03 2006-05-04 Tridonic Optoelectronics Gmbh Light-emitting diode arrangement with color conversion material
JP2006147999A (en) * 2004-11-24 2006-06-08 Kyocera Corp Wiring board for light emitting device, and light emitting equipment
KR100580753B1 (en) 2004-12-17 2006-05-09 엘지이노텍 주식회사 Light emitting device package
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US7821023B2 (en) * 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
JP3955065B2 (en) * 2005-01-18 2007-08-08 シャープ株式会社 Optical coupler
JP4637623B2 (en) * 2005-03-24 2011-02-23 京セラ株式会社 Light emitting device and lighting device
JP2007019153A (en) * 2005-07-06 2007-01-25 Citizen Electronics Co Ltd Optical link device
US7910940B2 (en) 2005-08-05 2011-03-22 Panasonic Corporation Semiconductor light-emitting device
JP5303097B2 (en) * 2005-10-07 2013-10-02 日立化成株式会社 Thermosetting light reflecting resin composition, optical semiconductor mounting substrate using the same, manufacturing method thereof, and optical semiconductor device.
JP5727984B2 (en) * 2005-10-07 2015-06-03 日立化成株式会社 Thermosetting light reflecting resin composition, optical semiconductor mounting substrate using the same, manufacturing method thereof, and optical semiconductor device.
JP4013077B2 (en) 2005-11-21 2007-11-28 松下電工株式会社 Light emitting device and manufacturing method thereof
JP4965858B2 (en) * 2005-12-26 2012-07-04 株式会社東芝 LED device with lens
US20080089072A1 (en) * 2006-10-11 2008-04-17 Alti-Electronics Co., Ltd. High Power Light Emitting Diode Package
US9335006B2 (en) 2006-04-18 2016-05-10 Cree, Inc. Saturated yellow phosphor converted LED and blue converted red LED
JP2007288014A (en) * 2006-04-19 2007-11-01 Pioneer Electronic Corp Light emitting diode cap
JP2007311445A (en) 2006-05-17 2007-11-29 Stanley Electric Co Ltd Semiconductor light-emitting device, and manufacturing method thereof
US9502624B2 (en) 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US8092735B2 (en) * 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
US7763478B2 (en) * 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
JP5103831B2 (en) * 2006-08-29 2012-12-19 日亜化学工業株式会社 Semiconductor manufacturing method
US8425271B2 (en) * 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
JP4908128B2 (en) * 2006-09-22 2012-04-04 株式会社東芝 Light emitting device and manufacturing method thereof
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
KR20080065451A (en) * 2007-01-09 2008-07-14 삼성전기주식회사 Led package
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
JP5224890B2 (en) * 2008-04-21 2013-07-03 シャープ株式会社 Light emitting device and method for manufacturing light emitting device
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
TWI384591B (en) 2008-11-17 2013-02-01 Everlight Electronics Co Ltd Circuit board for led
US9786811B2 (en) 2011-02-04 2017-10-10 Cree, Inc. Tilted emission LED array
JP2011035198A (en) * 2009-08-03 2011-02-17 Ccs Inc Method of manufacturing led light-emitting device
US8710525B2 (en) 2010-03-15 2014-04-29 Nichia Corporation Light emitting device
JP5378276B2 (en) * 2010-03-19 2013-12-25 住友化学株式会社 Method for manufacturing light emitting device
JP5778999B2 (en) 2010-08-06 2015-09-16 日亜化学工業株式会社 Light emitting device and image display unit
JP5667820B2 (en) * 2010-09-14 2015-02-12 東芝電子エンジニアリング株式会社 Optical semiconductor device
WO2012090576A1 (en) 2010-12-28 2012-07-05 日亜化学工業株式会社 Light-emitting apparatus and method of manufacturing thereof
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
JP5983603B2 (en) 2011-05-16 2016-08-31 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP5720957B2 (en) * 2012-08-22 2015-05-20 復盛精密工業股▲ふん▼有限公司 Method for manufacturing light-emitting diode support structure (2)
JP5772846B2 (en) * 2012-12-04 2015-09-02 株式会社デンソー Electronic device and manufacturing method thereof
JP6476567B2 (en) 2013-03-29 2019-03-06 日亜化学工業株式会社 Light emitting device
JP6338136B2 (en) * 2013-04-30 2018-06-06 東芝ライテック株式会社 Vehicle lighting device and vehicle light
TWI559053B (en) * 2013-05-28 2016-11-21 潘宇翔 Light source device adapted to a direct-type backlight module and display device
JP5740458B2 (en) * 2013-12-02 2015-06-24 東芝電子エンジニアリング株式会社 Optical semiconductor package
JP6532200B2 (en) 2014-09-04 2019-06-19 日亜化学工業株式会社 Package and light emitting device using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300573A (en) * 2007-05-30 2008-12-11 Toshiba Corp Light emitting device
US7888699B2 (en) 2007-05-30 2011-02-15 Kabushiki Kaisha Toshiba Light emitting device including bleed-out preventing notches
US8283675B2 (en) 2009-04-10 2012-10-09 Sharp Kabushiki Kaisha Light emitting device

Also Published As

Publication number Publication date
JPH10261821A (en) 1998-09-29

Similar Documents

Publication Publication Date Title
JP3655267B2 (en) Semiconductor light emitting device
US7183588B2 (en) Light emission device
KR100710102B1 (en) Light emitting apparatus
EP3267494B1 (en) Light emitting device and method for manufacturing a plurality of light emitting devices
US7260123B2 (en) Semiconductor light-emitting apparatus having wavelength conversion portion and method of fabricating the same
KR101052096B1 (en) Semiconductor light emitting devices comprising a flexible film having an optical element and a method of assembling the same
US7304326B2 (en) Light emitting device and sealing material
EP1243031B9 (en) Surface mountable light diode light source and method for producing a light diode light source
US6900511B2 (en) Optoelectronic component and method for producing it
DE102004034166B4 (en) Light-emitting device
JP4432275B2 (en) The light source device
CN100511732C (en) Light emitting device
EP2064752B1 (en) Light emitting package and method of making same
JP5542890B2 (en) Package for semiconductor light emitting device using distributed sealant and method for packaging the same
EP2899762B1 (en) Light emitting device package
KR100723247B1 (en) Chip coating type light emitting diode package and fabrication method thereof
KR101496425B1 (en) Lighting device package
US7452737B2 (en) Molded lens over LED die
JP2008072092A (en) Leadframe-based packages for solid state light emitting devices and methods of forming leadframe-based packages for solid state light emitting devices
TWI351774B (en) Semiconductor light emitting device
EP1249875B2 (en) Light emitting device
JP3992059B2 (en) Method for manufacturing light emitting device
US20110241055A1 (en) Optical semiconductor element mounting package, and optical semiconductor device using the same
JP5110744B2 (en) Light emitting device and manufacturing method thereof
US8415681B2 (en) Semiconductor light emitting device and multiple lead frame for semiconductor light emitting device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071114

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081114

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091114

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101114

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101114

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111114

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121114

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131114

Year of fee payment: 10

LAPS Cancellation because of no payment of annual fees