JP4503950B2 - Method for manufacturing phosphor-integrated LED lamp - Google Patents

Method for manufacturing phosphor-integrated LED lamp Download PDF

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Publication number
JP4503950B2
JP4503950B2 JP2003273627A JP2003273627A JP4503950B2 JP 4503950 B2 JP4503950 B2 JP 4503950B2 JP 2003273627 A JP2003273627 A JP 2003273627A JP 2003273627 A JP2003273627 A JP 2003273627A JP 4503950 B2 JP4503950 B2 JP 4503950B2
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phosphor
chip
led chip
led lamp
resin
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Expired - Fee Related
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JP2005033138A (en
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巌 東海林
茂夫 藤澤
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スタンレー電気株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Description

The present invention relates to a method for manufacturing an LED lamp, and more specifically, a mixed color of the color of light from an LED lamp and the color of light from a phosphor excited by light from the LED chip is represented by the LED lamp. The present invention relates to a method of manufacturing an LED lamp that is integrated and incorporated with a phosphor in order to obtain an emission color.

  As a conventional method of forming this type of white LED lamp 90, as shown in FIG. 8, in order to protect the LED chip 92 mounted on the substrate 91, a lens 93 for covering the LED chip 92 is formed. The phosphor 93b is mixed in the transparent epoxy resin 93a at a predetermined ratio (for example, 25% by weight), placed at a predetermined position by an appropriate means such as a printing means or an injection means, and solidified by thermosetting or the like. is there. (For example, refer to Patent Document 1.)

JP 2000-223750 A (paragraphs 0033 to 0037, FIG. 3)

  However, in the method of mixing the phosphor in the entire resin covering the LED chip as described above, pelletization for performing transfer molding is difficult due to the specific gravity problem between the resin and the phosphor and the problem of bonding. In reality, the phosphor is mixed in a liquid resin at an appropriate ratio (for example, 25% by weight), and injected into the mold in a liquid state by the printing means, the injection means, etc. as described above, After that, a heat curing step must be performed, resulting in a problem that it is difficult to improve productivity.

  In addition, since the work is performed in a liquid state, in the resin in a liquid state as described above, a phosphor having a high specific gravity precipitates over time, and the uniform diffusion state is lost. Since the performance of the lamp 90 is reduced, it is necessary to constantly stir the resin and maintain a uniform diffusion state of the phosphor, which causes a problem that the process becomes complicated. Even if work was performed, precipitation still occurred during heating for curing, and so on, which was not a complete solution.

As a specific means for solving the above-described conventional problems, the present invention provides a thermoplastic resin in which an appropriate amount of phosphor is added to a portion other than the bonding pad of the LED chip on which the die mounting is performed on the base, or A chip cover made of a thermosetting resin is thermally welded, wiring is performed on the bonding pad by a bonding wire, a casing is formed by a transfer molding of a transparent resin covering the LED chip, the chip cover, and the bonding wire. It solves the problem by providing a method for producing a phosphor integral LED lamps, characterized in that there.

In the phosphor-integrated LED lamp of the present invention, the phosphor can be integrated by a simple operation of attaching a chip cover made of a thermoplastic resin to which an appropriate amount of phosphor is added to the LED chip. There is no need to add a phosphor to the resin to be formed. Therefore, the case can be formed by transfer molding, and the productivity can be improved. Further, since the normal temperature are those to be mixed phosphors in solid resin, does not occur loss of performance without causing the precipitation of the phosphor during operation.

  In the present invention, for the purpose of forming the case quickly by transfer molding, a phosphor is mixed in the resin forming the case by preparing a chip cover that holds the phosphor. It was realized without anything. At the same time, the performance of the phosphor-integrated LED lamp was improved by preventing the precipitation of the phosphor.

  FIG. 1 to FIG. 3 show the manufacturing method of Example 1 of the phosphor-integrated LED lamp 1 according to the present invention in the order of steps. First, as the first step, a circuit pattern laid on the substrate 2 is shown. 2a, the LED chip 3 is die mounted. In this embodiment, the LED chip 3 is formed on a circuit pattern 2a in a face-down state in which an active layer is formed on a sapphire substrate and a pair of surface electrodes 3a are provided on the surface side with the surface facing downward. This is shown in the mounted example. Therefore, since the positive and negative wirings are completed in this state, no wire bonding is performed thereafter.

  FIG. 2 shows a chip cover mounting step performed subsequent to the die mounting step. For example, a chip cover 4 formed in a substantially box shape by mixing an appropriate amount of phosphor 4b in a thermoplastic transparent resin 4a. The chip cover 4 is welded to the LED chip 3 by being attached to the LED chip 3 and heating the whole. Here, in the first embodiment, as described above, since the wire bonding process is not performed thereafter, the forming process of the case 5 is subsequently performed.

  FIG. 3 shows a process of forming the case 5, and as described above, the chip cover 4 holding an appropriate amount of the phosphor 4b according to the present invention is attached to the LED chip 3 by heat welding. The light emitted from the LED chip 3 is converted into desired color light such as white by the chip cover 4. Therefore, it is not necessary to mix a phosphor in a transparent resin such as an epoxy resin for forming the case 5.

  Therefore, in forming the case 5, it is possible to perform transfer molding in which a thermosetting resin that has been heated to a liquid state is poured into a mold and rapidly cured in the mold. This eliminates the need for a curing step in the furnace, and makes it possible to significantly reduce the manufacturing time of this type of phosphor-integrated LED lamp 1.

  FIGS. 4 to 6 show the manufacturing method of Example 2 of the phosphor-integrated LED lamp 1 according to the present invention in the order of steps, and the LED chip 3 employed in Example 2 includes a back surface. A mounting electrode 3b is provided on the side, a pad electrode 3c is provided on the surface side, and the LED chip 3 is die-mounted by one circuit pattern 2b of the substrate 2 and the mounting electrode 3b.

  Therefore, after the chip cover 4 is attached to the LED chip 3 and fixed by thermal welding, the pad electrode 3c of the LED chip 3 and the other circuit pattern 2c of the substrate 2 are wired by the gold wire 6. A bond needs to be made. Therefore, the chip cover 4 is provided with an opening 4c for releasing the pad electrode 3c from the outside.

  After the chip cover 4 is attached to the LED chip 3 and fixed by heating, wire bonding is performed by the gold wire 6 between the pad electrode 3c and the other circuit pattern 2c (FIG. 4). Here, in Example 2, at the time after wire bonding is performed, reheating is performed again at a temperature that reaches the melting temperature of the resin on which the chip cover 4 is formed.

  Thereby, when the chip cover 4 is formed of a thermoplastic resin, or even if it is a thermosetting resin, when the initial heating is relatively low, the chip cover 4 is softened again. Furthermore, the adhesion with the LED chip 3 is improved, or the molten metal flows onto the pad electrode 3c by melting and holds the gold wire 6 as shown in FIG. Make sure. And after said reheating is performed, as shown also in FIG. 6, case 5 is formed by transfer molding like Example 1. FIG.

  Although not shown in the drawings, there is also one in which the LED chip 3 of Example 1 is die-mounted on the substrate 2 on the sapphire substrate side without facing down. In this case, two locations on the upper surface of the LED chip 3 In this case, naturally, the chip cover 4 is provided with openings at two places, or with openings including two places. Things are adopted.

  Further, in the actual manufacture of the phosphor-integrated LED lamp 1, the substrate 2 is formed in a shape in which an appropriate plurality is connected at least in the longitudinal direction, and accordingly, a circuit pattern 2a (not shown, FIG. 1) is formed. The same number is also provided. Each circuit pattern 2a is mounted with an LED chip 3 (not shown, see FIGS. 1 and 4), wire-bonded with a gold wire 6 and arranged in a row.

  As described above, the case 5 is formed in an integrated state so as to cover all the LED chips 3 arranged in a row. Thereafter, as shown in FIG. 7, if the substrate 2 including the case 5 is cut and separated at an intermediate position between the LED chips 3 along the longitudinal direction as the phosphor-integrated LED lamp 1, An individual phosphor-integrated LED lamp 1 is obtained.

  Next, functions and effects of the phosphor-integrated LED lamp 1 of the present invention obtained by the manufacturing method described above will be described. First, a chip cover 4 that covers the LED chip 3 is provided, and the chip cover 4 holds a necessary amount of the phosphor 4b, so that the resin in the case 5 can be formed. Thus, it is not necessary to disperse the phosphor 4b, thereby enabling the case 5 to be formed by transfer molding, and the productivity of the phosphor-integrated LED lamp 1 is significantly improved.

  Second, the phosphor 4b is concentrated on the periphery of the LED chip 3 by the chip cover 4 as described above, so that the light emitted from the LED chip 3 and the phosphor 4b are in contact with each other and diffused. It is possible to limit the range in which is performed to a narrow range close to the LED chip 3. Accordingly, it is possible to prevent the light emitting source from becoming excessively large and to prevent the amount of light from being reduced due to excessive diffusion, thereby providing a bright phosphor-integrated LED lamp 1.

  In the present invention, when a white color is obtained with a mixed color of an emission color from an LED chip and an emission color from a phosphor excited by light from the LED chip, that is, a mixed color of approximately two complementary colors As described in the example, the light emitted from the LED chip is ultraviolet light that is invisible light, and phosphors of the three primary colors of red (R), green (G), and blue (B) are combined, and only the emission color from the phosphor is used. It is also possible to apply to an LED lamp that obtains white light.

It is sectional drawing which shows the 1st process in Example 1 of the manufacturing method of the fluorescent substance integrated LED lamp which concerns on this invention. 7 is a cross-sectional view showing a second step in the same Example 1. FIG. FIG. 6 is a cross-sectional view showing a third step in Example 1 in the same manner. It is sectional drawing which similarly shows the 1st process in Example 2 of the manufacturing method of the fluorescent substance integrated LED lamp which concerns on this invention. 11 is a cross-sectional view showing a second step in the same Example 2. FIG. FIG. 6 is a cross-sectional view showing a third step in Example 2 in the same manner. It is explanatory drawing which shows the example of the isolation | separation process to the separate LED lamp in an actual manufacturing process. It is explanatory drawing which shows a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Phosphor-integrated LED lamp 2 ... Board | substrate 2a ... Circuit pattern 2b ... One circuit pattern 2c ... Other one circuit pattern 3 ... LED chip 3a ... Surface electrode 3b ... Mounting electrode 3c ... Pad electrode 4 ... Chip cover 4a ... Transparent resin 4b ... Phosphor 4c ... Opening 5 ... Case 6 ... Gold wire

Claims (4)

  1.   A chip cover made of a thermoplastic resin or thermosetting resin to which an appropriate amount of phosphor is added is thermally welded to a portion of the LED chip that is die-mounted on the base except for the bonding pad, and then the bonding is performed. A method of manufacturing a phosphor-integrated LED lamp, wherein wiring is performed on a pad using a bonding wire, and the casing is formed by a transparent resin transfer mold covering the LED chip, the chip cover, and the bonding wire.
  2.   2. The phosphor-integrated LED lamp according to claim 1, wherein after the bonding pad is wired with a bonding wire, a reheating step to a melting temperature of the resin on which the chip cover is formed is performed. Manufacturing method.
  3. A step of performing die mounting of an LED chip on a circuit pattern laid on a substrate, and a solid chip cover formed of a thermoplastic resin or a thermosetting resin to which an appropriate amount of phosphor is added after the die mounting. And a step of thermally welding the chip cover to the LED chip by heating the entire LED chip and heating the entire LED chip.
  4. The method of manufacturing an LED lamp according to claim 3, further comprising: forming a case made of a transparent resin that covers the solid chip cover after the heat welding.
JP2003273627A 2003-07-11 2003-07-11 Method for manufacturing phosphor-integrated LED lamp Expired - Fee Related JP4503950B2 (en)

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JP4503950B2 true JP4503950B2 (en) 2010-07-14

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US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP4971672B2 (en) * 2005-09-09 2012-07-11 パナソニック株式会社 Light emitting device
JP4857735B2 (en) * 2005-11-28 2012-01-18 日亜化学工業株式会社 Light emitting device
KR100658970B1 (en) 2006-01-09 2006-12-19 삼성전기주식회사 LED device generating light with multi-wavelengths
KR100723247B1 (en) 2006-01-10 2007-05-22 삼성전기주식회사 Chip coating type light emitting diode package and fabrication method thereof
US7943952B2 (en) 2006-07-31 2011-05-17 Cree, Inc. Method of uniform phosphor chip coating and LED package fabricated using method
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same

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JP2001230452A (en) * 2000-02-15 2001-08-24 Asahi Rubber:Kk Light emitting diode with cap as well as method and apparatus for packaging of light emitting diode
JP2002076434A (en) * 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd Light emitting device
JP2002134792A (en) * 2000-10-25 2002-05-10 Matsushita Electric Ind Co Ltd Manufacturing method of white semiconductor light- emitting device
JP2003051622A (en) * 2001-08-07 2003-02-21 Rohm Co Ltd White light emitting semiconductor device
JP2003258312A (en) * 2002-03-01 2003-09-12 Citizen Electronics Co Ltd Method for manufacturing light emitting device

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2001230452A (en) * 2000-02-15 2001-08-24 Asahi Rubber:Kk Light emitting diode with cap as well as method and apparatus for packaging of light emitting diode
JP2002076434A (en) * 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd Light emitting device
JP2002134792A (en) * 2000-10-25 2002-05-10 Matsushita Electric Ind Co Ltd Manufacturing method of white semiconductor light- emitting device
JP2003051622A (en) * 2001-08-07 2003-02-21 Rohm Co Ltd White light emitting semiconductor device
JP2003258312A (en) * 2002-03-01 2003-09-12 Citizen Electronics Co Ltd Method for manufacturing light emitting device

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