JP3986327B2 - Method for manufacturing light emitting device - Google Patents
Method for manufacturing light emitting device Download PDFInfo
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- JP3986327B2 JP3986327B2 JP2002056669A JP2002056669A JP3986327B2 JP 3986327 B2 JP3986327 B2 JP 3986327B2 JP 2002056669 A JP2002056669 A JP 2002056669A JP 2002056669 A JP2002056669 A JP 2002056669A JP 3986327 B2 JP3986327 B2 JP 3986327B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 22
- 229920005989 resin Polymers 0.000 claims description 52
- 239000011347 resin Substances 0.000 claims description 52
- 239000002245 particle Substances 0.000 claims description 38
- 238000007789 sealing Methods 0.000 claims description 22
- 239000000049 pigment Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000465 moulding Methods 0.000 description 9
- 239000003086 colorant Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
【0001】
【発明の属する分野】
本発明は発光素子本来の発光色をパステル調のやわらかな中間色の発光に変換する発光装置の製造方法に関する。
【0002】
【従来の技術】
従来、パステル調のやわらかな中間色の発光を行う発光装置として、発光素子からの1次発光を蛍光物質に照射することによって色調の異なる2次発光を行わせ、この1次発光と2次発光を合成することにより白色光とし、この白色光を着色剤でフイルターすることで所望の中間色を有するパステル調の発光を得ることが行われている。
【0003】
例えば、公知の特開平11−87784号公報には青色発光ダイオード(以下LEDと略記)にYAG系蛍光物質を含有した透明被覆部材を装着することにより白色発光装置とし、この白色発光装置の上に着色剤を含有する被覆材を設けて所望の中間色を有するパステル調の発光を得ることが開示されている。
【0004】
又、本出願人は特願2000−298579号において、青色LEDを被覆する透明樹脂中に蛍光粒子と色素粒子を含有させることにより、所望の中間色を有するパステル調の発光を得る発光装置を提案している。
【0005】
【発明が解決しようとする課題】
上記蛍光粒子と色素粒子とによるパステル調の発光装置は、従来より行われていた赤色LED、緑色LED、青色LEDによる多色混合方式に比べて、単一の発光素子により多様な中間色を有するパステル調の発光を得ることが出来るという利点を有するが、反面以下の問題を有する。
【0006】
この蛍光粒子と色素粒子とを用いて中間色をつくる方法は、所望の中間色を実現するためには、青色LEDの発光波長、蛍光粒子の量、色素粒子の量等の各要素を最適に調整する必要があるが、前記従来の青色LEDを被覆する透明樹脂中に蛍光粒子と色素粒子を含有させる方法では、青色LEDの発光が前記透明樹脂中において蛍光粒子に当たらずに直接色素粒子を通過する、いわゆる発光の無効分が多くなり、十分な発光効率を得る事が困難であった。
【0007】
又、特開平11−87784号公報に開示された青色LEDに蛍光物質を含有した透明被覆部材と、着色剤を含有した被覆材とを装着する方法は、考え方としては発光効率を高める可能性が有るが、量産性のある具体的な製造方法は何ら示されていない。
本発明は上記問題に鑑みなされたものであり、蛍光粒子と色素粒子とを用いてパステル調の中間色をつくる発光装置において、発光効率が高く、量産性に優れた発光装置の製造方法を提供することを目的としている。
【0008】
【課題を解決するための手段】
上記目的を達成するため、本発明は電極が形成された基体上に発光素子を搭載し、この発光素子の上面を樹脂材で封止してなる発光装置において、前記発光素子の電極に対応する位置に貫通孔を有するごとく、前記発光素子を蛍光粒子を含有した第1樹脂で封止する第1封止工程と、前記第1樹脂の貫通孔を通して発光素子の電極と前記基体上の電極とを接続する接続工程と、前記第1樹脂の上を色素粒子を含有した第2樹脂で封止する第2封止工程とを有することを特徴とする。
【0009】
また、第1封止工程は、前記第1樹脂の前記発光素子の電極に対応する位置に貫通孔を有するごとく、樹脂成形すると良い。
【0010】
さらに、前記第1封止工程と第2封止工程との間に、前記第1樹脂の貫通孔を通して発光素子の電極と前記基体上の電極とを接続する接続工程を設けると良い。
【0011】
【発明の実施の形態】
以下図面により本発明の実施の形態を説明する。図1は本発明の実施の形態を示す発光装置の断面図であり、1は発光装置、2は基体である回路基板で、電極3が形成されている。4は発光素子であるLEDであり、前記回路基板2に搭載されるとともにワイヤー5によって前記電極3に接続されている。
【0012】
6は蛍光粒子を含有した第1樹脂、7は色素粒子を含有した第2樹脂であり、前記LED4は第1樹脂6及び第2樹脂7によって2重に封止されている。
【0013】
次に前記発光装置1の製造方法を説明する。前記回路基板2にLED4を搭載し、該LED4の電極4aと前記回路基板2の電極3とをヤイヤー5によって接続する。次にこのLED4を実装した回路基板2を第1成形金型に入れ、蛍光粒子を含有した第1樹脂6により封止する第1封止工程を行う。
【0014】
前記第1封止工程による第1樹脂6が硬化した後に、回路基板2を第2成形金型に入れ、色素粒子を含有した第2樹脂7で封止する第2封止工程を行って前記発光装置1が完成する。
【0015】
本実施の形態においては、前記LED4として青色LEDを用いるとともに、前記第1樹脂6として、エポキシ樹脂またはシリコン樹脂中にイットリウム・アルミニウム・ガーネット(YAG)系の蛍光粒子を含有させた樹脂材を用い、さらに第2樹脂7はエポキシ樹脂またはシリコン樹脂中に所望のパステル・カラーに合せた色素を含有させた樹脂材を用いた。
【0016】
次に上記発光装置1の発光動作を説明する。前記LED4に電流を流すと、LED4は青色発光を行い、この青色発光が第1樹脂6に分散された蛍光粒子に当たって励起することで、蛍光粒子より波長変換された広波長の黄色光が発光される。そしてこの黄色光とLED4からの青色光とが合成されることによって第1樹脂6の表面より白色光が発光される。
【0017】
さらに、この白色光が色素粒子を含有した第2樹脂7を通過する時に、この色素粒子の吸収によって、所望の中間色光が発光される。そしてこの中間色光は前記第2樹脂7に含有させる色素を選択することで任意のパステル・カラーを作ることができる。
【0018】
尚、この製造過程において、第1封止工程が終了後に前記LED4に電流を供給して発光させ、この時の前記第1樹脂6の表面より発光される白色光を測定し、その色調及び光量に合せて前記第2樹脂7に含有させる色素の状態を調整してやれば、前記LED4及び第1樹脂6に含有された蛍光粒子のバラツキをカバーして前記発光装置1としての製品バラツキを小さくすることができる。
【0019】
図2は本発明の他の実施の形態を示す発光装置の断面図である。図2における発光装置10において、図1の発光装置1と異なるところは、前記第1樹脂6の成形時に、前記LED4の電極4aに対応する位置に貫通孔6aが設けられており、前記ワイヤー5による回路基板2の電極3とLED4の電極4aとの接続が、この貫通孔6aを通して行われていることである。
【0020】
次に前記発光装置10の製造方法を説明する。図3は第1成形工程であるチップ化工程によって作成された発光チップ20を示し、図3Aは斜視図、図3Bは断面図である。発光チップ20を作成するチップ化工程は、前記LED4を第1成形金型内に入れて前記蛍光粒子を含有した第1樹脂6で封止するが、このとき前記LED4の電極4aに対応する位置には金型によって貫通孔6aが同時成形されている。
【0021】
図4は前記発光装置10のチップ化工程以後の製造工程を示す製造工程図であり、Aは前記回路基板2に前記発光チップ20を搭載する実装工程、Bは実装されたLED4と回路基板2の電極を接続する接続工程、Cは前記LED4を実装した回路基板2を第2成形金型に入れ、色素粒子を含有した第2樹脂7で封止する第2封止工程である。
【0022】
以下、製造工程を説明すると、図4Aの実装工程においては、第1成形工程であるチップ化工程によって作成された発光チップ20を回路基板2の所定の位置に搭載固定する。次に図4Bの接続工程において前記LED4の電極4aと前記回路基板2の電極3とを、前記第1樹脂6に形成された貫通孔6aを通してワイヤー5により接続する。さらに図4Cの第2封止工程において前記LED4を実装した回路基板2を第2成形金型に入れ、色素粒子を含有した第2樹脂7で封止することにより、発光装置10が完成する。
【0023】
この実施の形態においては、LED4を予め第1樹脂6によりモールドして発光チップ20に加工し、この発光チップ20を従来のLED素子と同様に回路基板2に実装することができるため、LED素子単体をハンドリングして実装していたのに比べて、LED素子の破損や劣化を少なくすることが可能となり、また、LED素子の周囲に蛍光体層を均一に形成することで、前記蛍光粒子の量を一定にする事ができるので色のバラツキを少なくする事が可能となり、LED素子の青色発光を効率よく白色発光に変換することが可能となる。
【0024】
そして、この発光装置10の発光動作は前記発光装置1と同様であり、また、この製造工程においても接続工程Bの終了後に前記LED4に電流を供給して発光させ、この時の前記第1樹脂6の表面より発光される白色光を測定し、その色調及び光量に合せて前記第2樹脂7に含有させる色素の状態を調整してやれば、前記LED4及び第1樹脂6に含有された蛍光粒子のバラツキをカバーして前記発光装置10としての製品バラツキを小さくすることができる。
【0025】
【発明の効果】
上記のごとく、本発明においては蛍光粒子と色素粒子とを用いてパステル調の中間色をつくる発光装置において、LEDの封止を蛍光粒子を含有した第1樹脂による封止と、色素粒子を含有した第2樹脂による封止との2工程にしているため、発光効率が高く、量産性に優れた発光装置の製造方法を提供するができる。特にLED素子を予め第1樹脂によりモールドして発光チップ20に加工する方法は製品の歩留まりを改善する効果が大きい。
【図面の簡単な説明】
【図1】 本発明の実施の形態を示す発光装置の断面図。
【図2】本発明の他の実施の形態を示す発光装置の断面図。
【図3】本発明の発光チップ20を示し、図3Aは斜視図、図3Bは断面図である。
【図4】本発明の発光装置の製造工程図であり、図4Aは実装工程、図4Bは接続工程、図4Cは封止工程である。
【符号の説明】
1、10 発光装置
2 回路基板
4 LED
6 第1樹脂
6a 貫通孔
7 第2樹脂
20 発光チップ[0001]
[Field of the Invention]
The present invention relates to a method for manufacturing a light-emitting device that converts light emitted from a light-emitting element into light emission having a soft pastel color.
[0002]
[Prior art]
Conventionally, as a light emitting device that emits light in a soft pastel color, secondary light emission having a different color tone is performed by irradiating a fluorescent material with primary light emission from a light emitting element, and this primary light emission and secondary light emission are performed. A pastel-like light emission having a desired intermediate color is obtained by synthesizing white light and filtering the white light with a colorant.
[0003]
For example, in the known Japanese Patent Application Laid-Open No. 11-87784, a blue light emitting diode (hereinafter abbreviated as LED) is mounted with a transparent covering member containing a YAG-based fluorescent material to form a white light emitting device. It is disclosed that a coating material containing a colorant is provided to obtain pastel light emission having a desired intermediate color.
[0004]
In addition, in Japanese Patent Application No. 2000-298579, the present applicant has proposed a light emitting device that obtains pastel light emission having a desired intermediate color by including fluorescent particles and pigment particles in a transparent resin covering a blue LED. ing.
[0005]
[Problems to be solved by the invention]
The pastel light emitting device using the fluorescent particles and the pigment particles is a pastel having various intermediate colors with a single light emitting element as compared with the conventional multi-color mixing method using red LED, green LED, and blue LED. Although it has an advantage that it is possible to obtain a luminescent light, it has the following problems.
[0006]
In this method of creating an intermediate color using fluorescent particles and pigment particles, each element such as the emission wavelength of the blue LED, the amount of fluorescent particles, and the amount of pigment particles is optimally adjusted in order to realize a desired intermediate color. Although it is necessary, in the conventional method of containing fluorescent particles and pigment particles in the transparent resin covering the blue LED, the light emission of the blue LED passes directly through the pigment particles without hitting the fluorescent particles in the transparent resin. In other words, the amount of ineffective light emission increases, and it is difficult to obtain sufficient light emission efficiency.
[0007]
In addition, the method of mounting a transparent coating member containing a fluorescent substance and a coating material containing a colorant on a blue LED disclosed in Japanese Patent Application Laid-Open No. 11-87784 may increase the luminous efficiency as a concept. However, there is no specific production method with mass productivity.
The present invention has been made in view of the above problems, and provides a method for manufacturing a light-emitting device having high luminous efficiency and excellent mass productivity in a light-emitting device that uses a fluorescent particle and a pigment particle to produce a pastel-tone intermediate color. The purpose is that.
[0008]
[Means for Solving the Problems]
To achieve the above object, the present invention is equipped with a light emitting element on a substrate on which electrodes are formed, the light-emitting device obtained by encapsulating in a resin material to an upper surface of the light emitting element, corresponding to the electrode of the light emitting element A first sealing step of sealing the light emitting element with a first resin containing fluorescent particles so as to have a through hole at a position; an electrode of the light emitting element and an electrode on the substrate through the through hole of the first resin; And a second sealing step of sealing the first resin with a second resin containing pigment particles.
[0009]
In the first sealing step, it is preferable to perform resin molding so that the first resin has a through hole at a position corresponding to the electrode of the light emitting element.
[0010]
Furthermore, it is preferable to provide a connection step for connecting the electrode of the light emitting element and the electrode on the substrate through the through hole of the first resin between the first sealing step and the second sealing step.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a light-emitting device showing an embodiment of the present invention. 1 is a light-emitting device, 2 is a circuit board as a base, and an
[0012]
Reference numeral 6 denotes a first resin containing fluorescent particles, 7 denotes a second resin containing pigment particles, and the
[0013]
Next, a method for manufacturing the light emitting device 1 will be described. An
[0014]
After the first resin 6 is cured by the first sealing step, the circuit board 2 is put in a second molding die, and the second sealing step of sealing with the second resin 7 containing pigment particles is performed, The light emitting device 1 is completed.
[0015]
In the present embodiment, a blue LED is used as the
[0016]
Next, the light emitting operation of the light emitting device 1 will be described. When an electric current is passed through the
[0017]
Further, when the white light passes through the second resin 7 containing the pigment particles, desired intermediate color light is emitted by the absorption of the pigment particles. The intermediate color light can produce an arbitrary pastel color by selecting a pigment to be contained in the second resin 7.
[0018]
In this manufacturing process, after the first sealing step is completed, current is supplied to the
[0019]
FIG. 2 is a cross-sectional view of a light-emitting device showing another embodiment of the present invention. 2 differs from the light emitting device 1 of FIG. 1 in that when the first resin 6 is molded, a
[0020]
Next, a method for manufacturing the light emitting device 10 will be described. FIG. 3 shows the light emitting chip 20 produced by the chip forming process as the first molding process, FIG. 3A is a perspective view, and FIG. 3B is a cross-sectional view. In the chip forming step for creating the light emitting chip 20, the
[0021]
FIG. 4 is a manufacturing process diagram showing manufacturing steps after the chip forming process of the light emitting device 10, A is a mounting process for mounting the light emitting chip 20 on the circuit board 2, and B is a mounted
[0022]
Hereinafter, the manufacturing process will be described. In the mounting process of FIG. 4A, the light emitting chip 20 created by the chip forming process as the first molding process is mounted and fixed at a predetermined position on the circuit board 2. 4B, the
[0023]
In this embodiment, the
[0024]
The light-emitting operation of the light-emitting device 10 is the same as that of the light-emitting device 1. Also in this manufacturing process, after the connection process B is completed, the
[0025]
【The invention's effect】
As described above, in the present invention, in a light-emitting device that creates a pastel intermediate color using fluorescent particles and pigment particles, the LED is sealed with a first resin containing fluorescent particles and pigment particles are contained. Since the two steps of sealing with the second resin are employed, it is possible to provide a method for manufacturing a light emitting device with high light emission efficiency and excellent mass productivity. In particular, the method of processing the LED element by pre-molding it with the first resin into the light emitting chip 20 has a great effect of improving the yield of the product.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of a light-emitting device showing another embodiment of the present invention.
3 shows a light-emitting chip 20 of the present invention, FIG. 3A is a perspective view, and FIG. 3B is a cross-sectional view.
4A and 4B are manufacturing process diagrams of the light-emitting device of the present invention, in which FIG. 4A is a mounting process, FIG. 4B is a connection process, and FIG. 4C is a sealing process.
[Explanation of symbols]
1, 10 Light emitting device 2
6
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JP4503950B2 (en) * | 2003-07-11 | 2010-07-14 | スタンレー電気株式会社 | Method for manufacturing phosphor-integrated LED lamp |
DE102004021233A1 (en) * | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | LED array |
US7372198B2 (en) * | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
KR101047683B1 (en) * | 2005-05-17 | 2011-07-08 | 엘지이노텍 주식회사 | Light emitting device packaging method that does not require wire bonding |
KR101161383B1 (en) * | 2005-07-04 | 2012-07-02 | 서울반도체 주식회사 | Light emitting diode and method for producing the same |
EP1922764A1 (en) | 2005-08-24 | 2008-05-21 | Philips Intellectual Property & Standards GmbH | Light emitting diodes and lasers diodes with color converters |
KR101007062B1 (en) * | 2008-03-21 | 2011-01-12 | 주식회사 루멘스 | Lead frame of light emitting diode and light emitting diode package using the lead frame and method for manufacturing light emitting diode package |
JP5255421B2 (en) * | 2008-12-15 | 2013-08-07 | 株式会社小糸製作所 | Light emitting module, method for manufacturing light emitting module, and lamp unit |
KR101601622B1 (en) | 2009-10-13 | 2016-03-09 | 삼성전자주식회사 | Light emitting diode divice Light emitting appratus and Manufacturing method of light emitting diode divice |
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