CN2310925Y - 发光二极管的新结构 - Google Patents

发光二极管的新结构 Download PDF

Info

Publication number
CN2310925Y
CN2310925Y CN 97227697 CN97227697U CN2310925Y CN 2310925 Y CN2310925 Y CN 2310925Y CN 97227697 CN97227697 CN 97227697 CN 97227697 U CN97227697 U CN 97227697U CN 2310925 Y CN2310925 Y CN 2310925Y
Authority
CN
China
Prior art keywords
light emitting
crystal grain
light
emitting diode
grain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 97227697
Other languages
English (en)
Inventor
陈兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
QUANXING DEVELOPMENT SCIENCE AND TECHNOLOGY Co Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN 97227697 priority Critical patent/CN2310925Y/zh
Application granted granted Critical
Publication of CN2310925Y publication Critical patent/CN2310925Y/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Led Device Packages (AREA)

Abstract

一种发光二极管的新结构,包括电极支架、发光晶粒、荧光粉和封胶树脂。发光晶粒放置于一电极支架的V型槽中,发光晶粒表面及周围涂覆一层可变波长的荧光粉层。支架的V型槽、发光晶粒及涂覆于发光晶粒表面及其周围的荧光粉层封装于封胶树脂中。欲发白色光,可用蓝色发光晶粒。用黄色荧光粉层。若用紫外光晶粒激发其表面或周围的荧光粉,则荧光粉选用那一色,发的光也为那一种颜色。本实用新型可制得各种发光颜色,光色均匀,发光角度大,成本低。

Description

发光二极管的新结构
本实用新型涉及一种发光二极管的新结构。
目前市面上普遍用于电脑、通讯器材或小家电上的发光二极管(即L ED),所发出的光大都为红、黄或蓝色,很少有白色光。其主要原因是发白色光的发光二极管制造复杂,且白色的光色控制困难。例如,有人将红、绿、蓝(R、G、B)三色光同时装在一个发光二极管元件中,当同时发光时会有白光出现。用这种方式虽可得到白光,但白色光不均匀,且红、绿、蓝三种二极管晶片的电压、电流各有不同,因此,造成白色光不易控制。
近来日亚化学公司推出一种可发白光的发光二极管(日本专利公开号:特平7-99345),其结构如图1所示,主要是将萤光粉与树脂混合构成萤光树脂4,将萤光树脂4装填在放有发光晶粒1的第一电极支架2的V型槽中。如果发光晶粒为发蓝色光的发光晶片,萤光树脂的萤光粉为黄色,则蓝色与黄色可合成白色光。这种产品的缺点是萤光粉厚度不易控制,若萤光粉太厚,则颜色偏黄,若萤光粉太薄,则颜色偏蓝;又因晶粒周围萤光粉分布较多,致使本产品所发出的白光投射于白色纸张上时,会发现所投射光点的外环有一圈黄色光环产生,因此,发光二极管的投射角度很难做大。针对这些问题,本创作人曾开发了光色均匀且角度较大的白色光的发光二极管制品(见中国专利申请号:97238703.X)。
本实用新型的目的在于进一步简化产品结构、提高产品质量、降低生产成本,提供一种利用变换波长的萤光粉涂布色覆于发光晶粒,使其发出白色光或其它光谱的发光二极管的新结构。
本实用新型是这样实现的:发光二极管的新结构包括两个电极支架、发光晶粒、萤光粉和封胶树脂。发光晶粒放置于一电极支架的V型槽中。发光晶粒表面及其周围涂覆一层可变换波长的萤光粉层。两电极支架顶部、支架的V型槽、V型槽中的发光晶粒以及涂覆于发光晶粒表面及其周围的萤光粉层,封装于封胶树脂中。
所说的发光晶粒可为紫外光晶粒或为可见光晶粒。
所说的萤光粉层可为多种颜色萤光粉混合体。
本实用新型的优点是:利用变换波长材料的萤光粉体涂布包覆发光晶粒,便可使其发出白色光或其它所欲发出的光谱,而且光色均匀、发光角度大、萤光粉用量少,制作方便,成本低。
图1是日亚化学公司所制的发光二极管的结构。
图2是本实用新型所述的发光二极管的新结构实施例之一。
图3是图2所示实施例的局部放大图。
图4是本实用新型所述的发光二极管的新结构实施例之二的局部放大图。
下面结合附图对本实用新型作进一步说明:
如图2所示,本实用新型所述的发光二极管的新结构,是在第一电极支架2的V型槽中(俗称:碗座)放置发光晶粒1,打好导线后,于V型槽中涂覆萤光粉3。萤光粉3包覆于发光晶粒1的表面及四周(可参看图3所示的V型槽局部放大图),最后利用封胶树脂5封装成圆粒状的发光二极管成品。
涂布萤光粉层1时,先将萤光粉体与液体(如酒精或水及少量粘着液)按适当比例混合调配并点滴附着于发光晶粒1上,萤光体溶液会均匀混合流动并附着于发光晶粒1的表面及四周,待溶液挥发之后,即可形成一包覆于发光晶粒1的萤光粉层薄膜3。
图4为本实用新型第二实施例V型槽的局部放大图。这种结构的发光二极体,涂布萤光粉层1时,先将萤光粉体3与溶液做适当比例的调配,萤光粉体3的浓度较第一实施例为稀。最后直接点滴布满整个V型槽,然后加温,使溶液挥发,剩下的萤光粉层附着于V型槽内壁及发光晶粒1的四周表面上。这种结构的发光二极管制作更加减化,且可达到光色均匀的效果。
本实用新型欲发白色光,则发光晶粒1可用蓝色光晶粒,萤光粉层3则为黄色萤光粉(YAG氧化物);相对地,也可选用黄色晶粒,而萤光粉则选用蓝色萤光粉,这种用长波长激发短波长萤光粉使其发出萤光的效率很低,但考虑蓝光晶粒成本高于黄色晶粒成本几十倍的情况,若白色光仅用于指示,而不用于照明,这也是一种选择。
另一个较佳的选择是选用紫外光晶粒产生紫外光,以紫外光激发其表面或周围的萤光粉,萤光粉选择那一种颜色,则发出的光即为那一色;也可以不同颜色萤光粉调配出想要的色光;如欲得三波长的白色光,则以红色、蓝色及绿色三色混合,即可得到三波长的白色光。
以紫外光激发萤光粉,因波长较短故能量较强,较易激发萤光粉且效率高。紫外光粒以GaN材料较易制得,波长为360-390nm之间,此种波长对人体无伤害。

Claims (4)

1、一种发光二极管的新结构,包括两个电极支架、发光晶粒、萤光粉和封胶树脂,其特征在于:发光晶粒放置于一电极支架的V型槽中,发光晶体表面及周围涂覆一层可变波长的萤光粉层;两电极支架顶部、支架的V型槽、V型槽中的发光晶粒以及涂覆于发光晶粒表面及其周围的萤光粉层,封装于封胶树脂中。
2、按权利要求1所述的发光二极管新结构,其特征在于:发光晶粒可为紫外光晶粒。
3、按权利要求1所述的发光二极管新结构,其特征在于:发光晶粒可为可见光晶粒。
4、按权利要求1所述的发光二极管新结构,其特征在于:萤光粉层可为多种颜色萤光粉混合体。
CN 97227697 1997-09-26 1997-09-26 发光二极管的新结构 Expired - Fee Related CN2310925Y (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 97227697 CN2310925Y (zh) 1997-09-26 1997-09-26 发光二极管的新结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 97227697 CN2310925Y (zh) 1997-09-26 1997-09-26 发光二极管的新结构

Publications (1)

Publication Number Publication Date
CN2310925Y true CN2310925Y (zh) 1999-03-17

Family

ID=33941024

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 97227697 Expired - Fee Related CN2310925Y (zh) 1997-09-26 1997-09-26 发光二极管的新结构

Country Status (1)

Country Link
CN (1) CN2310925Y (zh)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007140660A1 (fr) * 2006-06-08 2007-12-13 Hong-Yuan Technology Co., Ltd. Système émetteur de lumière, dispositif émetteur de lumière et leur procédé de fabrication
WO2008043207A1 (en) * 2006-10-08 2008-04-17 Hong-Yuan Technology Co., Ltd. Light emitting system, light emitting apparatus and forming method thereof
CN100392879C (zh) * 2004-02-23 2008-06-04 弘元科技有限公司 发光装置及其制造方法和制造系统
CN102593326A (zh) * 2012-03-12 2012-07-18 江门昊坤光电科技有限公司 基于荧光粉分散激发技术的led封装结构及其封装工艺
CN102856477A (zh) * 2011-11-22 2013-01-02 深圳市光峰光电技术有限公司 一种荧光粉片层的制作方法及制作系统
US8778601B2 (en) 2010-03-05 2014-07-15 Rohm and Haas Electronic Materials Methods of forming photolithographic patterns
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US10546978B2 (en) 2003-09-18 2020-01-28 Cree, Inc. Molded chip fabrication method and apparatus
US10164158B2 (en) 2003-09-18 2018-12-25 Cree, Inc. Molded chip fabrication method and apparatus
US9105817B2 (en) 2003-09-18 2015-08-11 Cree, Inc. Molded chip fabrication method and apparatus
CN100392879C (zh) * 2004-02-23 2008-06-04 弘元科技有限公司 发光装置及其制造方法和制造系统
WO2007140660A1 (fr) * 2006-06-08 2007-12-13 Hong-Yuan Technology Co., Ltd. Système émetteur de lumière, dispositif émetteur de lumière et leur procédé de fabrication
WO2008043207A1 (en) * 2006-10-08 2008-04-17 Hong-Yuan Technology Co., Ltd. Light emitting system, light emitting apparatus and forming method thereof
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8778601B2 (en) 2010-03-05 2014-07-15 Rohm and Haas Electronic Materials Methods of forming photolithographic patterns
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
CN102856477A (zh) * 2011-11-22 2013-01-02 深圳市光峰光电技术有限公司 一种荧光粉片层的制作方法及制作系统
CN102593326A (zh) * 2012-03-12 2012-07-18 江门昊坤光电科技有限公司 基于荧光粉分散激发技术的led封装结构及其封装工艺

Similar Documents

Publication Publication Date Title
CN2310925Y (zh) 发光二极管的新结构
CN203218260U (zh) 双芯片发光二极管
CN204088306U (zh) 一种白光led模组
CN1364318A (zh) 发光二极管、照明装置以及制造这种发光二极管的方法
CN107546301B (zh) 一种白胶、led灯珠及其的封装方法
JP3048368U (ja) 発光ダイオード
TW200921934A (en) Discrete light-emitting diode light source device of wavelength conversion unit
TW201010125A (en) White light light-emitting diodes
CN101915369A (zh) Led白光光源模块
CN109638146A (zh) 一种基于紫光芯片激发用于降低蓝光危害的led光源
CN107255865A (zh) 荧光色轮
CN110212076A (zh) 一种光源模组及包括该光源模组的照明装置
CN110233197A (zh) 一种光源模组及包括该光源模组的照明装置
CN101572262A (zh) 宽谱白光发光二极管
CN201209828Y (zh) 宽谱白光led
CN204885157U (zh) 一种可调色led光源
CN102779814A (zh) 可发出白光的发光元件及其混光方法
CN106653980B (zh) 一种制备高显指白光led封装器件的方法
CN105042363B (zh) 一种四基色led光源
CN100385690C (zh) 可调整色温的白光发光方法
CN2310388Y (zh) 发光二极管
CN209087838U (zh) Led光源及led灯
US20040089864A1 (en) Light emitting diode and method of making the same
TW200823277A (en) A light emission diode and phosphor and organic thin film
CN102709280A (zh) 一种cob集成光源模块

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: QUAN XING TECHNOLOGY DEVELOPMENT CO., LTD.

Free format text: FORMER NAME OR ADDRESS: CHEN XING

CP03 Change of name, title or address

Address after: County Road nine Chupei city of Taiwan province Hsinchu County No. 80 3 floor

Patentee after: Quanxing Development Science and Technology Co., Ltd.

Address before: No. 83 benevolence street, Hsinchu, Taiwan

Patentee before: Chen Xing

C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee