WO2003001612A1 - Dispositif a semi-conducteurs et procede de fabrication - Google Patents

Dispositif a semi-conducteurs et procede de fabrication Download PDF

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Publication number
WO2003001612A1
WO2003001612A1 PCT/JP2002/006176 JP0206176W WO03001612A1 WO 2003001612 A1 WO2003001612 A1 WO 2003001612A1 JP 0206176 W JP0206176 W JP 0206176W WO 03001612 A1 WO03001612 A1 WO 03001612A1
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WIPO (PCT)
Prior art keywords
semiconductor device
light
diffusing agent
sealing member
semiconductor
Prior art date
Application number
PCT/JP2002/006176
Other languages
English (en)
Japanese (ja)
Inventor
Shigetsugu Kouda
Original Assignee
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corporation filed Critical Nichia Corporation
Priority to JP2003507903A priority Critical patent/JP4010299B2/ja
Publication of WO2003001612A1 publication Critical patent/WO2003001612A1/fr

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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
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    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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Definitions

  • the present invention relates to a semiconductor device used as a light source for illumination in a switch, a full-color display, a liquid crystal backlight, and the like, and particularly to a highly reliable light emitting device.
  • Such light emitting devices are used for light sources of optical printer heads, liquid crystal backlight sources, light sources of various meters, and various reading sensors, for example, by taking advantage of their features such as small size, low power consumption, and light weight.
  • Such a light emitting device has, for example, a package having a recess capable of accommodating a semiconductor element, and positive and negative lead electrodes inserted from the bottom of the recess such that one main surface is exposed and integrally formed.
  • An LED chip is die-bonded as a semiconductor element on the lead electrode exposed from the bottom surface of the recess, and each electrode of the LED chip is electrically connected to a lead electrode provided on the package by a gold wire or the like.
  • the LED chip and the gold wire are covered with a resin as a sealing member in the recess.
  • Such an LED chip can emit high-output light by dropping a large current, but also emits high-temperature heat when emitting light. This causes discoloration and degradation of the sealing resin disposed near the LED chip.
  • a translucent organic member having a heat-sensitive carbon-carbon double bond is used as a sealing member disposed near the ED chip, the bond is broken and yellowing is caused, and optical characteristics are impaired.
  • wire breakage and cracks occur in each member, As the elapsed time of use increases, the reliability tends to decrease rapidly.
  • a silicone resin that has excellent light resistance and heat resistance to light in the near-ultraviolet region and has plasticity against thermal stress is used. It is preferably used. Since the main skeleton of the silicone resin does not have a carbon-carbon double bond that causes photodegradation, it does not easily undergo electron transition absorption and hardly degrades even when irradiated for a long time. Further, since the semiconductor device has excellent flexibility, damage to the semiconductor device due to thermal stress can be prevented.
  • the cured product mainly composed of silicone resin is excellent in flexibility, the surface of the falling object has low mechanical strength and tackiness.
  • silicone resin has high stability to heat, and the shape of the cured product mainly composed of silicone does not shrink during the curing process and is determined at the time of filling before curing. Therefore, when a sealing member made of silicone resin is provided in a package having a concave portion as described above, the amount of silicone resin to be filled needs to be finely adjusted so that the surface does not contact the outside.
  • a semiconductor device according to the present invention is a semiconductor device comprising: a semiconductor element; a package having a recess in which the semiconductor element is housed; and a sealing member filled in the recess.
  • the curable composition comprising, as essential components, a light-transmitting polymer resin having a hydrophilic main chain and a hydrophobic side chain, and a diffusing agent capable of absorbing the polymer resin. Characterized by being a cured product of
  • the semiconductor device thus configured has excellent reliability and optical characteristics, and can be obtained with high yield.
  • the hardness of the sealing member is preferably 5 shore (A) to 80 shore (D), thereby enabling a large current drop and a high output. A semiconductor device is obtained.
  • the upper surface of the sealing member has a parabolic depression from the end to the center, so that the upper surface having tackiness is used when mounting or the like. Contact with the outside can be further suppressed. Further, when the sealing member is translucent, a light emitting device capable of uniformly emitting light on one surface is obtained.
  • the diffusing agent has a needle-like or columnar shape, thereby increasing the polymer resin absorption of the diffusing agent and reducing the amount of the diffusing agent.
  • a desired sealing member shape can be realized.
  • the diffusing agent is a hailstone type crystal, whereby a semiconductor device capable of diffusing light well and emitting light uniformly is obtained.
  • the diffusing agent has an average particle size of 0.1 ⁇ ! 5 ⁇ is preferable, whereby a semiconductor device capable of suppressing color unevenness and emitting light at a uniform and high luminous intensity is obtained.
  • a refractive index of the diffusing agent is lower than a refractive index of the light emitting element and higher than a refractive index of the light transmitting polymer resin, whereby light is emitted from the semiconductor element. Good external without sealing light inside High luminous intensity.
  • the sealing member includes, from the semiconductor element side, a first layer having a higher content of the diffusing agent and a second layer having a lower content of the diffusing agent than the first layer. It is preferable that the surface of the light emitting element is substantially covered with the first layer. As a result, the efficiency of extracting light emitted from the semiconductor element can be increased.
  • the sealing member may contain a fluorescent substance capable of absorbing at least a part of light emitted from a semiconductor element and emitting light having a different wavelength. Accordingly, a color conversion type semiconductor device capable of emitting light uniformly with little color variation between light emitting devices can be obtained.
  • the refractive index of the fluorescent substance is lower than the refractive index of the light emitting element and higher than the refractive index of the diffusing agent, thereby extracting light emitted from the semiconductor element. Efficiency can be improved.
  • a difference in refractive index between the fluorescent substance and the light-emitting element is substantially equal to a difference in refractive index between the fluorescent substance and the diffusing agent.
  • the sealing member formed by curing a curable composition containing a translucent polymer resin, a diffusing agent, and a fluorescent substance as essential components includes the semiconductor element and the first layer. It is preferable to have a color conversion layer containing the fluorescent substance between the two. That is, on the surface of the semiconductor element, a color conversion layer containing a fluorescent substance, a first layer containing a larger amount of a diffusing agent, and a second layer containing a smaller amount of a diffusing agent than the first layer. It is preferable that the light emitted from the semiconductor element and the light obtained by partially absorbing the light and being converted by the color conversion layer be sequentially stacked on the first layer. It is reflected and scattered and is mixed well.
  • the directivity of the mixed color light is improved by passing through the second layer.
  • This effect is remarkable when a fluorescent substance having a large particle diameter, particularly a fluorescent substance having a central particle diameter of 15 to 50 m, is used, and a light emitting device capable of emitting light with high luminance and uniformity. Is obtained.
  • the method for forming a semiconductor device according to the present invention includes: a semiconductor element; And a sealing member filled in the concave portion.
  • a curable composition liquid containing a translucent polymer resin having a hydrophilic main chain and a hydrophobic side chain and a diffusing agent capable of absorbing the translucent polymer resin as essential components is prepared.
  • FIG. 1 is a schematic plan view and a schematic sectional view showing a light emitting device of the present invention.
  • FIG. 2 is a schematic plan view and a schematic sectional view showing another light emitting device of the present invention.
  • FIG. 3 is a schematic plan view and a schematic sectional view showing another light emitting device of the present invention.
  • FIG. 1 is a schematic plan view and a schematic cross-sectional view of an SMD type light emitting diode according to an embodiment of the present invention.
  • a resin package 1 having a recess and exposing the front end surfaces of a pair of lead electrodes 2 and 3 from the bottom of the recess is used.
  • the light emitting element 4 is mounted on the bottom surface of the concave portion, and each electrode of the light emitting element 4 and the tip of each of the lead electrodes are electrically connected by a gold wire 6.
  • a diffusing agent capable of adjusting at least the degree of absorption of the polymer resin into a light-transmitting polymer resin having a hydrophilic main chain and a hydrophobic side chain is stirred. Cured product of the curable composition obtained by It is covered with.
  • the semiconductor element 4 is not particularly limited, but in the present embodiment, a light emitting element is used to form a light emitting device that emits light to the outside.
  • a light-emitting element having a light-emitting layer which emits light capable of efficiently exciting the fluorescent substance is preferable.
  • Z n S e and G a N such can be mentioned various semiconductor, phosphor efficiently excited may capable of emitting short-wavelength nitride semiconductor (I n x A 1 Y G ai _ x - Y N, 0 ⁇ X, 0 ⁇ Y, X + Y ⁇ 1) are preferably exemplified.
  • the nitride semiconductor may contain boron or phosphorus as desired.
  • the structure of the semiconductor layer include a homo structure having a MIS junction, a PIN junction and a pn junction, a heterostructure, and a double hetero structure.
  • the emission wavelength of such a semiconductor layer can be variously selected depending on the material and the degree of mixed crystal thereof.
  • a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed as a thin film in which a quantum effect occurs can be used.
  • a material such as sapphire, spinel, SiC, Si, ZnO, or GaN is suitably used for the semiconductor substrate.
  • a sapphire substrate In order to form a nitride semiconductor having good crystallinity with good mass productivity, it is preferable to use a sapphire substrate.
  • a nitride semiconductor can be formed on this sapphire substrate by using the MOCVD method or the like.
  • a buffer layer such as GaN, A1N, or GaN is formed on a sapphire substrate, and a nitride semiconductor having a pn junction is formed thereon to form a semiconductor element. After the semiconductor layer is stacked on the substrate, the substrate can be removed to obtain a semiconductor element having no substrate.
  • the active layer formed of indium nitride nitride, the second cladding layer formed of p-type aluminum nitride gallium, and the second contact layer formed of p-type gallium nitride have a double heterostructure. And so on.
  • Nitride semiconductors exhibit n-type conductivity without being doped with impurities.
  • n-type nitride semiconductor When a desired n-type nitride semiconductor is formed, for example, to improve luminous efficiency, it is preferable to appropriately introduce Si, Ge, Se, Te, C, or the like as an n-type dopant.
  • p-type dopants such as Zn, Mg, Be, Ca, Sr, and Ba are doped. Since it is difficult to make a nitride semiconductor p-type only by doping a p-type dopant, it is preferable to reduce the resistance by heating in a furnace, irradiating plasma, or the like after introducing the p-type dopant.
  • the semiconductor wafer can be cut into chips to form a semiconductor element made of a nitride semiconductor.
  • an insulating protective film made of Sio 2 or the like so that only the bonding portion of each electrode is exposed by patterning and covers the entire element, a miniaturized semiconductor device can be formed with high reliability. .
  • the emission wavelength of the semiconductor element when emitting white light, should be 400 nm or more in consideration of the complementary color relationship with the emission wavelength from the fluorescent substance and the deterioration of the light-transmitting resin. It is preferably at most 30 nm, more preferably at least 420 nm and at most 490 nm. In order to further improve the excitation efficiency of the semiconductor element and the luminous efficiency of the fluorescent substance, the emission wavelength of the semiconductor element is preferably 450 nm or more and 475 nm or less.
  • the resin used for the sealing member of the present invention is relatively hard to be deteriorated by ultraviolet rays, and a semiconductor element having a main emission wavelength in an ultraviolet region shorter than 400 nm or a short wavelength region of visible light is used. Is also possible.
  • a light-emitting element that emits light in the near ultraviolet region and a fluorescent substance that can absorb part of the wavelength and emit light of another wavelength, color unevenness is reduced.
  • a color conversion type light emitting device can be obtained. Since the color emitted from such a color conversion type light emitting device uses only light emitted from the fluorescent substance, color adjustment can be performed relatively easily.
  • a sealing member having a light-emitting surface on the surface is provided in a concave portion of the package in which the semiconductor element is arranged.
  • the sealing member comprises a cured product of a curable composition having: a light-transmitting polymer resin having a hydrophilic main chain and a hydrophobic side chain; and a diffusing agent capable of absorbing the polymer resin.
  • the upper surface of the sealing member is located below the outer upper surface of the package.
  • Such a sealing member is, for example, a liquid curable composition having the polymer resin and an oil-absorbing diffusing agent, for example, in a concave-type package in which a light-emitting element is disposed, and at the both end upper surfaces of the concave portion.
  • the volume of the cured product decreases compared to that before curing, and the height of the obtained cured product is the upper surface of both ends of the recess.
  • the volume of the composition can be reduced during the curing reaction by allowing the oil-absorbing dispersant to coexist with the composition mainly composed of a resin that does not originally cure and shrink by heat treatment.
  • the surface of the cured product can be made inside the outer contour of the package without finely adjusting the filling amount of the composition.
  • a highly reliable light emitting device can be obtained both inside and outside.
  • the sealing member of the present invention can be obtained by simply filling a curable composition liquid containing a translucent polymer resin and the above-mentioned diffusing agent as essential components in a line substantially flush with the upper surface of the outer surface of the concave package, and thermally curing the liquid. It can be easily obtained, and there is no need to fine-tune the filling amount by visual inspection. Further, the filling amount of the sealing member is determined by the volume of the package, and the volume shrinkage from before curing to after curing of the sealing member is determined by the degree and content of the surface treatment of the diffusing agent. The volume of the stop member can be constant. Thereby, mass productivity and yield are improved.
  • the diffusing agent used in the present invention can easily form a sealing member using a highly reliable resin to a desired thickness.
  • a highly reliable semiconductor device can be formed with good mass productivity by using a thermosetting composition containing a polymer resin having high thermal stability as an essential component.
  • the upper surface of the sealing member which becomes the light emitting surface of the semiconductor device, is smooth and has both ends. It is preferable that the shape be parabolically concave from the center to the center, whereby a semiconductor device having high reliability and excellent optical characteristics can be obtained. Further, it is preferable that the recess is substantially symmetrical in the major axis and the minor axis, whereby a light emitting device having good directivity characteristics can be obtained.
  • a light emitting surface is made of a composition having essential components of a polymer resin having a hydrophilic main chain and a hydrophobic main chain having high thermal stability and a diffusing agent whose oil absorption is adjustable. It can be easily obtained by reducing the volume of the polymer resin.
  • a small amount of a composition containing a polymer resin consisting of a hydrophilic main chain and a hydrophobic main chain having high heat stability as an essential component is injected into the concave portion of the package, and a sealing member is formed. If formed, it is difficult to make the injection amount of the polymer resin constant in each semiconductor device, and the thickness of the sealing member varies among the semiconductor devices. Further, when the sealing member is formed by curing a resin composition having a high viscosity, the upper surface of the sealing member tends to be uneven, which causes color unevenness and variation in directional characteristics. Further, when a fluorescent substance or the like is contained in the polymer resin, color variation occurs between the light emitting devices.
  • the curable composition containing the polymer resin and the diffusing agent as essential components is always injected so as to seal the entire volume of the package. It can be injected into the device. As a result, a semiconductor device having a small color variation and an excellent yield can be obtained even when a fluorescent substance or a pigment is contained.
  • a silicone resin having a viscosity of 700 mPa-S and a refractive index of 1.53 is used, and the average particle size of the silicone resin composition containing the silicone resin as a main component is determined.
  • a light calcium carbonate having a diameter of 1.0 ⁇ m and an oil absorption of 70 ml Z 100 g is stirred.
  • a resin include a siloxane-based silicone resin having a siloxane bond as a skeleton and an organic group directly bonded to the silicon element.
  • the organic group used in the siloxane-based silicone resin it is preferable to use a methyl group and a phenyl group from the viewpoint of heat resistance.
  • a nitride-based semiconductor element it is preferable to use a phenylmethylsiloxane-based silicone resin because light can be extracted well.
  • the viscosity of the translucent polymer resin is preferably from 2000 mPa ⁇ s to 20000 mPa ⁇ s, more preferably from 3000 mPa ⁇ s to 1,000 OmPa ⁇ s from the viewpoint of workability.
  • the diffusing agent When the diffusing agent is contained in the translucent polymer resin and stirred, heat is generated and the resin tends to be heated and become unstable, so that the temperature of the resin returns to a constant temperature before filling and stabilizes. It is preferable to leave for a certain period of time.
  • a resin having high thermal stability and a viscosity in the above-mentioned range it becomes possible to maintain a preferable state of dispersion of the diffusing agent in the resin even if the resin is left for a certain period of time after stirring. As a result, the reliability yield is improved.
  • the hardness after curing is preferably 5 shore (A) to 80 shore (D), and more preferably 5 shore (A) to 40 shore (D).
  • the hardness after curing is preferably 5 shore (A) to 80 shore (D), and more preferably 5 shore (A) to 40 shore (D).
  • the polymer resin preferably has a refractive index of 1.4 to 1.65.
  • a translucent polymer resin having a hydrophilic main chain and a hydrophobic main chain such as a silicone resin is used, but the polymer resin used is not particularly limited, and an epoxy resin, an acrylic resin, a urethane Resins, diaryl phthalate resins, fluorine resins, and the like can also be used.
  • Diffusing agent a translucent polymer resin having a hydrophilic main chain and a hydrophobic main chain such as a silicone resin.
  • an oil-absorbing diffusing agent is used as a diffusing agent capable of absorbing at least the polymer resin in the curable yarn mainly composed of the polymer resin.
  • the diffusing agent used in the present invention include light calcium carbonate, heavy calcium carbonate, talc, white carbon, magnesium carbonate, hydrous aluminum / magnesium silicate, and palladium sulfate.
  • the diffusing agent used in the present invention may have various structures such as a cubic shape such as a hexagonal shape, a spindle shape, a crushed shape, and a rod shape such as a needle shape or a column shape.
  • a diffusing agent having a rod shape such as a needle shape or a column shape.
  • the surface of the diffusing agent has a large surface area and a light emitting element. Settles in opposition.
  • the diffusing agent forms an agglomerate in which one end is aggregated at one location and the other is separated from each other due to the attraction between the particles.
  • Such agglomerates can shrink the sealing member satisfactorily in the thickness direction, and can provide a certain distance between each particle and each agglomerate, so that light extraction efficiency is not hindered. Light can be diffused.
  • the average particle diameter of the diffusing agent is 0.1 n! It is preferably in the range of from 5.0 to 5.0 ⁇ m, more preferably in the range of from 1.0 ⁇ to 2.5 ⁇ m.
  • the diffusing agent having such an average particle diameter value can efficiently absorb the polymer resin by a thermal action during curing.
  • the average particle diameter is a value measured by a sub-sheepsizer method based on an air permeation method as a basic principle.
  • the diffusing agent is a rod-shaped crystal such as a crushed, needle-like, or columnar-like crystal
  • the long side length measured by transmission electron microscopy is 1. ⁇ ⁇ ! ⁇ 3.0 m is preferred.
  • the diffusing agent preferably has a lower refractive index than the semiconductor element and a higher refractive index than the polymer resin, which preferably improves light extraction efficiency.
  • the diffusing agent consisting of calcium carbonate is of the hail type (aragonite type). It is preferable to use a crystal diffusing agent, whereby light can be favorably refracted by the diffusing agent.
  • the volume reduction rate of the translucent polymer resin can be adjusted by adjusting the content of the diffusing agent and by the degree of surface treatment applied to the diffusing agent.
  • Such surface treatment of the diffusing agent as possible out be applied using Al 2 0 3, F e 2 0 3, S i and the like.
  • the diffusing agent tends to have a smaller oil absorption as the degree of surface treatment increases.
  • the light-transmitting polymer resin in the present invention is preferably used with almost no surface treatment, whereby the volume of the light-transmitting polymer resin can be significantly reduced with a small content. That is, it is considered that the amount of absorption of the light-transmitting polymer resin and the amount of oil absorption of the light-transmitting polymer resin are in a mutual relationship.
  • the rate of volume decrease before and after curing becomes large.
  • the diffusing agent can be adjusted and used according to the desired volume reduction of the resin, and the present invention can be applied to a semiconductor device using a package of any volume size. '
  • the oil absorption of the diffusing agent is 30ml / l 00g ⁇ l without surface treatment
  • the oil absorption means a value measured by an oil absorption test method of Japanese Industrial Standards (JIS 5101).
  • the content of the diffusing agent in the sealing member is preferably 0.5% to 5%, thereby improving the luminous intensity, reliability, and workability of the light emitting device without reducing the light extraction efficiency of the light emitting element.
  • the volume of the curable composition can be reduced after the heat treatment.
  • the obtained curable composition liquid is left for a certain period of time to return the heat of the resin to a constant temperature, it is poured into a concave portion of the package in which the light-emitting means is arranged up to a line substantially flush with the upper surface of the end of the concave portion (the Second step), heat curing (third step).
  • the curable composition after filling is filled by some action of light calcium carbonate. Is reduced in volume.
  • the surface of the sealing member which is a cured product obtained in this manner, has a shape having a parabolic concave portion from the upper surface of the end to the center.
  • the turning part is substantially symmetrical about the major axis and the minor axis.
  • the volume of the sealing member after curing is smaller than that at the time of filling, and as a result, the surface of the sealing member that has been cured and shrunk has a parabolic shape from the upper surface of both ends of the package concave portion to the central portion and is longer when viewed from the light emitting surface.
  • the concave part is almost symmetrical left and right with respect to the axis and the short axis.
  • a semiconductor device having a good light emitting surface and excellent directional characteristics can be obtained.
  • the surface since the surface is formed below the upper surface of both ends of the package concave portion, the surface can be prevented from contacting the outside during the inspection and mounting, and a highly reliable semiconductor device can be obtained. .
  • the fluorescent material 8 may be contained in the sealing member.
  • the fluorescent substance used in the present invention will be described in detail.
  • various fluorescent substances such as an inorganic tendency substance and an organic fluorescent substance can be contained in each constituent member.
  • An example of such a fluorescent substance is a fluorescent substance containing a rare earth element which is an inorganic fluorescent substance.
  • the rare earth element-containing fluorescent substance specifically, at least one element selected from the group of Y, Lu, Sc, La, Gd, and Sm, and Al, Ga, and In And a garnet-type phosphor having at least one element selected from the group consisting of:
  • the fluorescent substance used in the semiconductor device of the present embodiment was activated by a cell that can emit light of different wavelengths by exciting light emitted from a semiconductor semiconductor element having a nitride-based semiconductor as a light emitting layer. It is based on a yttrium / aluminum oxide fluorescent material. Specific yttrium-aluminum oxide fluorescent material The, YA 10 3: C e, Y 3 A 1 5 O x 2: C e (YAG: C e) and Y 4 A 1 2 ⁇ 9: C e, more like a mixture thereof.
  • the yttrium-aluminum oxide-based fluorescent substance may contain at least one of Ba, Sr, Mg, Ca, Zn, and Pr. In addition, by containing Si, the crystal growth reaction can be suppressed and the particles of the fluorescent substance can be made uniform.
  • the yttrium-aluminum oxide-based phosphor activated by Ce is to be interpreted in a particularly broad sense, and part or all of yttrium is represented by Lu, Sc, La, Gd and Includes a phosphor that is substituted by at least one element selected from the group consisting of Sm, or that has a fluorescent action in which part or all of aluminum is substituted by any or both of Ba, Tl, Ga, and In Use in a broad sense.
  • a photoluminescent phosphor represented by the general formula (Y z G di z ) 3 A 15 2 : C e (where 0 and z ⁇ 1) or the general formula (R ei — a Sm a ) 3 R e ' 5 0 1 2: C e ( ⁇ , 0 ⁇ a ⁇ l, 0 ⁇ b ⁇ 1, Re is at least one selected from Y, Gd, La, Sc, R e' is A at least one selected from l, Ga, and 111.).
  • the photoluminescence phosphor can increase the excitation and emission efficiency in the long wavelength region of 460 nm or more by containing Gd (gadolinium) in the crystal.
  • the emission peak wavelength shifts to a longer wavelength, and the overall emission wavelength shifts to the longer wavelength side. That is, when a reddish emission color is required, it can be achieved by increasing the substitution amount of Gd.
  • the emission luminance of photoluminescence by blue light tends to decrease.
  • Tb, Cu, Ag, Au, Fe, Cr, Nd, Dy, Co, Ni, Ti, Eu, Pr, and the like can be contained in addition to Ce.
  • the emission wavelength can be shifted to a shorter wavelength side.
  • part of Y in the composition is replaced with Gd, the emission wavelength can be shifted to longer wavelengths.
  • the conversion is less than 10% and the content (substitution) of Ce is from 0.03 to 1.0. If the substitution with Gd is less than 20%, the green component is large and the red component is small. By increasing the content of ICe, the red component can be supplemented and the desired color tone can be obtained without lowering the luminance.
  • the temperature characteristics of the fluorescent substance itself are improved, and the reliability of the light emitting diode can be improved. Further, when a photoluminescent phosphor adjusted to have a large amount of red component is used, it is possible to emit an intermediate color such as a pink, and a semiconductor device having excellent color rendering properties can be formed.
  • Such a photoluminescent phosphor uses an oxide or a compound which easily becomes an oxide at a high temperature as a raw material for Y, Gd, Al, and Ce, and sufficiently uses them in a stoichiometric ratio. Mix to obtain the raw materials.
  • aluminum oxide is mixed with a coprecipitated oxide obtained by calcining a solution obtained by dissolving a rare earth element of Y, Gd, Ce in an acid at a stoichiometric ratio with oxalic acid, and calcination. Obtain a mixed raw material.
  • This is mixed with an appropriate amount of fluoride such as fluorinated ammonium fluoride or ammonium fluoride as a flux and packed in a crucible, and is placed in the air at a temperature of 135 ° C to 150 ° C for 2 to 5 hours. It can be obtained by firing to obtain a fired product, then ball-milling the fired product in water, washing, separating, drying, and finally passing through a sieve.
  • fluoride such as fluorinated ammonium fluoride or ammonium fluoride
  • such a photoluminescent phosphor may be a mixture of a yttrium-aluminum-garnet phosphor activated by two or more kinds of cells or another phosphor.
  • the emission spectrum emitted from the semiconductor element is a visible light (for example, 420 nm or less) having an extremely low luminous sensitivity in the ultraviolet region, at least a part of the emission spectrum is absorbed, and It is preferable that a fluorescent substance which emits a light emission spectrum having the above-mentioned light emission peak and which emits at least a part of the light is a fluorescent color complementary to each other. Since the fluorescent substance has two or more emission spectrum peaks including a complementary color region, the color shift of the fluorescent substance itself is extremely small, and absorbs the variation of the semiconductor element, thereby suppressing the color shift of the semiconductor device. can do.
  • the emission spectrum having two or more peaks above has a half-width of the emission peak on the short wavelength side that is larger than that. It is preferable that the width is smaller than the half-value width of the emission peak on the long wavelength side, whereby a long wavelength component can be extracted relatively easily and a semiconductor device having excellent color rendering properties can be obtained.
  • a semiconductor device capable of emitting white light and emitting a desired intermediate color with high luminance can be obtained.
  • Specific fluorescent substances include, for example, an element represented by M including at least one selected from Mg, Ca, Ba, Sr, and Zn; and at least Mn, Fe, Cr, and Sn
  • a semiconductor device capable of emitting light can be obtained.
  • an alkaline earth metal halogenapatite phosphor activated with Eu containing at least Mn and Z or C1 has excellent light resistance and environmental resistance. Further, the light emitting stadium emitted from the nitride semiconductor can be efficiently absorbed. Further, the white region can emit light, and the region can be adjusted by the composition.
  • an alkaline earth metal chloroapatite phosphor is included as an example of the alkaline earth metal halogen apatite phosphor.
  • B aMg 2 A1 1 6 0 2 7 Eu
  • B aMg 2 A l 1 6 ⁇ 2 7 Eu
  • Mn, Z n 2 G e 0 4 Mn
  • Y 2 0 2 S Eu
  • Gd 2 0 2 S the inclusion of at least one phosphor selected from E u, relatively with adjustable more detailed color White light with high color rendering properties can be obtained with a simple configuration.
  • the phosphor can be obtained by the following method. Amm chloride with various compounds which can be a such as oxides by phosphate oxide or thermal decomposition of the constituent elements - the ⁇ arm weighed in predetermined amounts, were mixed with a ball mill or the like, placed in a crucible, the New 2, H 2 reduction Kiri In an atmosphere, bake at a temperature of 800 ° C to 1200 ° C for 3 to 7 hours. The obtained sintered product is wet-milled, sieved, dehydrated and dried to obtain an alkaline earth metal halogenapatite phosphor.
  • the X value indicates the composition ratio of the first activator Eu element and is preferably 0.0001 ⁇ x 0.5. If X is less than 0.0001, the emission luminance decreases, and the X force exceeds SO. However, the emission luminance tends to decrease due to concentration quenching. More preferably, it is 0.005 ⁇ X ⁇ 0.4, and still more preferably, 0.01 ⁇ x ⁇ 0.2.
  • the y value indicates the composition ratio of at least one of Mn, Fe, Cr, and Sn, and is preferably 0.0001 ⁇ y 0.5, more preferably 0.005. ⁇ y ⁇ 0.4, more preferably 0.01 ⁇ y ⁇ 0.3. If y exceeds 0.5, the emission luminance tends to decrease due to concentration quenching.
  • This phosphor emits visible light by excitation of visible light of a relatively short wavelength from ultraviolet (for example, the main wavelength is 44 O nm or less).
  • White color which is the basic color of the name map), and red emission color.
  • the color tone of the phosphor can be variously changed from blue to white to red by adjusting the composition ratio to adjust the color tone. That is, when M is Sr, the emission color emits blue light by the emission of Eu 2+ having a peak near 450 nm, but when the value of y is increased by Mn of M ′, the emission of the phosphor is caused by the emission of Mn. The colors indicate blue to white to red emission colors.
  • the phosphor used in the present invention can be used for long wavelength ultraviolet light to relatively short wavelength visible light (for example, It is efficiently excited in the range from 300 nm to 400 nm to 425 nm), and the emission color is included in the white region of the basic color name in JISZ8110. In addition, since this phosphor is efficiently excited in the entire region of ultraviolet light, it can be expected that the phosphor can be effectively used for use in short-wavelength ultraviolet rays.
  • a semiconductor device using such a phosphor has two peaks, about 460 nm and about 580 nm, among the above-mentioned phosphors excited by UV LED or UV LD. It is possible to emit light from the light emitting spectrum. This emission spectrum has at least a spectrum component around 460 nm and a spectrum component around 580 nm, and emits fluorescent lights complementary to each other.
  • the above-mentioned phosphor may contain Tb, Cu, Ag, Au, Cr, Nd, Dy, Co, Ni, Ti, Pr and the like in addition to Eu, if desired.
  • the particle size of the fluorescent substance used in the present invention is preferably in the range of 1 ⁇ to 100 im, more preferably 1 ⁇ ! It is preferably in the range of ⁇ 50 im, more preferably 15 ⁇ ! ⁇ 30. Fluorescent substances having a particle size of less than 15 ⁇ m tend to form relatively agglomerates and become denser and sediment in the liquid resin, thereby reducing light transmission efficiency. In the present invention, by using such a fluorescent substance having no fluorescent substance, the concealment of light by the fluorescent substance is suppressed, and the output of the semiconductor device is improved.
  • the fluorescent substance having the particle size range of the present invention has high light absorption and conversion efficiency. And the width of the excitation wavelength is wide. As described above, by including a large particle size fluorescent substance having excellent optical characteristics, light around the main wavelength of a semiconductor element can be well converted and emitted, and mass production of semiconductor devices can be improved. Be improved.
  • the particle size of the fluorescent substance is a value obtained by a volume-based particle size distribution curve.
  • the volume-based particle size distribution curve is obtained by measuring the particle size distribution by a laser diffraction / scattering method. Specifically, the concentration is 0.05 in an environment at a temperature of 25 ° C and a humidity of 70%. % Of each substance was dispersed in an aqueous solution of sodium hexametaphosphate (%), which was measured by a laser diffraction type particle size distribution analyzer (SALD-2000A) in a particle size range of 03 111 to 700 ⁇ .
  • SALD-2000A laser diffraction type particle size distribution analyzer
  • the particle size when the integrated value is 50% in this volume-based particle size distribution curve is referred to as the center particle size
  • the center particle size of the fluorescent substance used in the present invention is 15111 to 50111. It is preferably within the range. Further, it is preferable that the fluorescent substance having the central particle diameter is contained frequently, and the frequency is preferably 20% to 50%. As described above, the use of a fluorescent substance with a small variation in the particle diameter suppresses color unevenness, and provides a semiconductor device having a good color tone.
  • the fluorescent substance preferably has a shape similar to that of the diffusing agent used in the present invention.
  • a surface mount (SMD) type semiconductor device as shown in FIG. 1 is formed.
  • LED chips I n 0 monochromatic emission peak of 475 nm Ru visible der as a light-emitting layer. 2 Ga 0.
  • MOCVD metalorganic vapor deposition
  • the element structure of the LED chip consists of an undoped nitride semiconductor, an n-type GaN layer, a GaN layer that forms an n-type contact layer with an Si-doped n-type electrode, and an undoped nitride semiconductor on a sapphire substrate.
  • the n-type GaN layer which is the next layer, the GaN layer that is the barrier layer that constitutes the light-emitting layer, the InGaN layer that constitutes the well layer, and the GaN layer that is the barrier layer are set as a set. It has a multiple quantum well structure consisting of five layers of InGaN layers sandwiched between N layers.
  • an A1GaN layer as a Mg-doped p-type cladding layer and a GaN layer as a Mg-doped p-type contact layer are sequentially laminated.
  • a GaN layer is formed on the sapphire substrate at a low temperature to serve as a buffer layer.
  • the p-type semiconductor is annealed at 400 ° C or higher after film formation.
  • each of the pn contact layers is exposed on the same side of the nitride semiconductor on the sapphire substrate by etching.
  • Positive and negative pedestal electrodes were formed on the respective contact layers using a sputtering method.
  • a metal thin film is formed as a light-transmitting electrode on the entire surface of the p-type nitride semiconductor, and then a pedestal electrode is formed on a part of the light-transmitting electrode. After a scribe line is drawn on the completed semiconductor wafer, it is divided by external force to form an LED chip (light refractive index 2.1) with a main emission wavelength of 460 nm.
  • the molded PPC resin melted from the gate on the lower surface side of the package is poured into a closed mold with a pair of positive and negative lead electrodes inserted and cured.
  • Form a package The package has a recess capable of accommodating a semiconductor element, and positive and negative lead electrodes are integrally formed so that one main surface is exposed from the bottom surface of the recess.
  • the grounded portions of the positive and negative lead electrodes are formed at both ends of the package joint surface along the joint surface. It is configured to be bent inward and to be soldered at the part bent inward.
  • the LED chip is die-bonded to the bottom surface of the concave portion of the package thus formed using epoxy resin.
  • the joining member used for die bonding is not particularly limited, and a resin or glass containing an Au—Sn alloy, a conductive material, or the like can be used.
  • the conductive material to be contained is preferably Ag. If an Ag paste having a content of 80% to 90% is used, a semiconductor device having excellent heat dissipation and low stress after bonding can be obtained.
  • each electrode of the die-bonded LED chip and each lead electrode exposed from the bottom of the package concave portion are electrically connected to each other by Au wires. In this embodiment, electrical connection is made by wires, but flip-chip mounting in which each electrode and the lead electrode are opposed to each other is also possible.
  • Such light calcium carbonate has little variation in particle diameter and can be dispersed almost uniformly in the composition. Further, the light calcium carbonate used in the present example has a columnar shape and has aragonite (aragonite) crystals. Such a diffusing agent has high resin absorption performance and light diffusion performance, and can form a light emitting device excellent in reliability and optical characteristics.
  • Light calcium carbonate is produced chemically by reacting calcined coal with carbon dioxide at high temperatures and calcining it. For this reason, amorphous limestone with low purity can be used as a raw material, and the cost can be reduced. In addition, the degree of freedom in design is large, and the shape and particle size can be controlled to obtain a diffusing agent in which each particle is uniform.
  • the curable composition thus obtained is filled into the package recess up to the same plane line as the upper surfaces of both ends of the recess. Finally, heat treatment is performed at 70 ° C. for 3 hours and at 150 ° C. for XI hours. Thereby, from the upper surface of both ends of the concave portion to the central portion, A light emitting surface having a substantially symmetrical parabolic recess is obtained.
  • the sealing member made of the cured product of the curable composition has a first layer having a large content of the diffusing agent and a content of the diffusing agent smaller or not contained than the first layer.
  • the LED chip is separated into two layers, a second layer, and the surface of the LED chip is covered with the first layer.
  • the first layer is preferably formed continuously from the bottom surface of the concave portion to the surface of the LED chip, whereby the shape of the light emitting surface can be a smooth concave portion.
  • the semiconductor device thus obtained has a luminous intensity of 500 mcd and an optical output of 4 mW, and further excellent directional characteristics can be obtained.
  • a semiconductor device is formed in the same manner as in Example 1 except that no diffusing agent is used.
  • the surface of the sealing member having tackiness and the upper surfaces of both ends of the concave portion are substantially the same plane line. For this reason, foreign matter adheres to the surface of the sealing member, which has an adverse effect on appearance and optical characteristics. Further, it is very difficult to mount the sealing member so as not to impair the reliability of the surface.
  • the luminous intensity and the optical output of the semiconductor device of this comparative example are measured, both the luminous intensity and the optical output are reduced by 5% as compared with the semiconductor device of the first embodiment.
  • Example 2 For comparison, a semiconductor device is formed in the same manner as in Example 1 except that the curable composition having no diffusing agent is filled in the package recesses less than in Example 1.
  • the thickness of the sealing member varies among the semiconductor devices. For this reason, the luminous intensity and the optical output vary among the semiconductor devices.
  • a semiconductor device was fabricated in the same manner as in Example 1 except that a fluorescent material was contained in the sealing member. Form.
  • a solution in which Y, Gd, and Ce rare earth elements are dissolved in an stoichiometric ratio in an acid is coprecipitated with oxalic acid, and a coprecipitated oxide obtained by firing this is mixed with aluminum oxide.
  • a mixed raw material is obtained.
  • parium fluoride as a flux the mixture is packed in a crucible and fired in air at a temperature of 1400 ° C. for 3 hours to obtain a fired product.
  • the fired product is ball in water, washed, separated, dried and finally through a sieve:.
  • the sealing member of the present embodiment includes a color conversion layer having the fluorescent substance, a first layer having a high content of the diffusing agent, and a lower content of the diffusing agent than the first layer. Or a second layer that does not contain the color conversion layer, and the surface of the LED chip is covered with two layers of the color conversion layer and the first layer. Thereby, a part of the light emitted from the LED chip is efficiently wavelength-converted by the color conversion layer, and the light emitted from the LED chip and the converted light are favorably converted by the first layer. Can be mixed and dispersed. As described above, by performing the color mixture dispersion at a place away from the light emitting surface, the uniformity of light is improved. In addition, the refractive index difference between the color conversion layer and the LED chip (0.
  • each layer 26 is similar to the refractive index difference (0.22) between the color conversion layer and the first layer, so that light can be efficiently extracted to the outside.
  • the color conversion layer and the first layer may be formed continuously from a bottom surface of the concave portion to a surface of the LED chip. Preferably, this allows the shape of the light emitting surface to be a smooth concave portion. Further, each layer preferably has a uniform film thickness.
  • the color conversion type semiconductor device thus obtained has a luminous intensity of 500 mcd and an optical output of 4 mW, and further excellent directivity can be obtained.
  • high-temperature storage test 100 ° C
  • high-temperature and high-humidity storage test 80 ° C, 85% RH
  • low-temperature storage test 140 ° C
  • 3 ⁇ of chromaticity in CIE chromaticity coordinates is 0.0099, and a semiconductor device with very small color variation can be obtained.
  • the fluorescent substance to absorb the wavelength of the light emitting element emits yellow-green Y 3 (A 1 o 8 G a o 2..) 5 0 12: and C e, emits red light by absorbing the wavelength of the light emitting element (S r 0 .
  • composition formula (Y.. 9 9 5 G d .... 5) 2. 7 5.
  • Y 2 9 6 5 A 1 5 mean particle size of about 4 ⁇ 1 5 O x 2:
  • the two kinds of fluorescent substances have different center particle diameter values, they can be dispersed preferably by their interaction, and the uniformity of emission color can be improved.
  • a YAG-based fluorescent substance having a small Gd substitution amount is used. Since light bodies have excellent temperature characteristics, they can emit light with high brightness even when used for a long time.
  • An LED chip dominant wavelength is 464 nm ', the median particle size of about 8 mu m as a fluorescent substance (Y 0. 9 5 G d ⁇ .. 5) 2. 8 5 o 1 5.
  • Contact Yopi CRI Daiodoka is
  • An LED chip dominant wavelength is 46 6 nm, the mean particle size of about 8 as a fluorescent substance (Y.. 9. G d. .!) 2. 8 5 0 A l 5., 5 O, z : C e 0 .
  • Heavy calcium carbonate (refractive index: 1.57) with an average particle size of 5 m and an oil absorption of 32 m1 / 100 g is used as a diffusing agent.
  • the content of heavy calcium carbonate was 3% with respect to 100 wt% (refractive index 1.53) of the phenylmethyl silicone resin composition. wt% is required, and the light extraction efficiency is slightly reduced as compared with Example 1.
  • Such heavy calcium carbonate is obtained by directly crushing and classifying mined limestone. For this reason, it is preferable to use high-purity crystalline limestone as a raw material.
  • porous carbonated calcium which is a reaction product of calcium carbonate and a phosphoric acid compound
  • porous carbonated calcium is used as a diffusing agent.
  • porous carbonated calcium which is a reaction product of calcium carbonate and a phosphoric acid compound
  • the desired light emitting diode can be obtained with a small content.
  • the porous calcium carbonate in the present embodiment is obtained by reacting a raw material calcium carbonate with a phosphoric acid compound to make it porous.
  • the calcium carbonate used as a raw material is not particularly limited, and various types such as heavy calcium carbonate and light calcium carbonate can be used.
  • the size, shape, dispersion state, crystal form, and degree of impurities in calcium carbonate of the particles are not particularly limited.
  • the phosphoric acid compound used preferably has good reactivity with the calcium carbonate used, and a soluble phosphoric acid compound is preferable.
  • Soluble phosphate compound for example H 3 P0 4, K 3 P0 4, KH 2 P0 4, Na 2 HP0 4 '12H 2 0, include (NH 4) ⁇ 0 3 ⁇ 3H 2 O or the like.
  • the phosphoric acid compound used is not limited to one kind, and two or more kinds may be used in combination.
  • Example 1 Except for using a dimethylsiloxane-based silicone resin composition as the resin composition, when a light emitting diode is formed in the same manner as in Example 1, the same effect as in Example 1 is obtained. The rate of volume reduction before and after curing of the stop member is low.
  • Example 1 is similar to Example 1 except that Au bumps are formed on each electrode of the LED chip and each lead electrode exposed from the bottom of the package recess is electrically connected to each other by ultrasonic bonding.
  • a light emitting diode is formed in the same manner, the same curing as in Example 3 can be obtained, and more uniform light emission can be obtained because there is no wire that blocks light on the light emitting surface side.
  • high reliability is maintained even when a large current is dropped because the LED chip and the lead electrode are connected only with metal without using materials such as epoxy resin that are weak in light resistance and heat resistance. You can do it. Possibility of industrial use
  • the semiconductor device of the present invention uses a polymer resin having a hydrophilic main chain and a hydrophobic main chain having high thermal stability, and, together with the light diffusing action, reduces the volume of the polymer resin in a thermosetting process.
  • a diffusing agent that can be reduced By forming, a semiconductor device having high reliability and good optical characteristics can be obtained with good mass productivity.
  • reliability can be maintained without deterioration even when a large current is dropped, and a semiconductor device which is highly reliable and can emit light at the same brightness as lighting can be provided.
  • the above utility value is extremely high.

Abstract

L'invention concerne un dispositif à semi-conducteurs comportant une puce à semi-conducteurs, un boîtier présentant une cavité contenant la puce à semi-conducteurs, et un élément d'étanchéité placé dans la cavité. Le dispositif selon l'invention est caractérisé en ce que l'élément d'étanchéité est une composition durcie contenant en tant que constituants essentiels une résine polymère transparente comportant une chaîne principale hydrophile et une chaîne latérale hydrophobe, et un agent diffuseur pouvant absorber au moins la résine polymère. Le dispositif à semi-conducteurs selon l'invention présente une excellente fiabilité interne et possède une forme le rendant insensible aux influences externes. Ledit dispositif à semi-conducteurs peut être fabriqué avec un bon rendement à l'aide d'un procédé consistant à préparer un liquide de composition durcissable contenant en tant que constituants essentiels une résine polymère transparente comportant une chaîne principale hydrophile et une chaîne latérale hydrophobe, et un agent diffuseur pouvant absorber la résine polymère, à injecter le liquide de composition durcissable dans la cavité du boîtier jusqu'à un niveau aligné avec le côté supérieur du boîtier, et à durcir le liquide de composition durcissable par traitement thermique.
PCT/JP2002/006176 2001-06-20 2002-06-20 Dispositif a semi-conducteurs et procede de fabrication WO2003001612A1 (fr)

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JP2004327870A (ja) * 2003-04-25 2004-11-18 Nichia Chem Ind Ltd 発光装置
WO2005038935A1 (fr) * 2003-10-15 2005-04-28 Nichia Corporation Dispositif électroluminescent
JP2005197476A (ja) * 2004-01-07 2005-07-21 Koito Mfg Co Ltd 発光モジュール及び車両用灯具
JP2005243795A (ja) * 2004-02-25 2005-09-08 Matsushita Electric Ind Co Ltd 光半導体装置
JP2006019677A (ja) * 2004-07-02 2006-01-19 Samsung Electro-Mechanics Co Ltd 色混合性の向上されたｒｇｂ発光ダイオードパッケージ
WO2006006544A1 (fr) * 2004-07-09 2006-01-19 Matsushita Electric Industrial Co., Ltd. Dispositif électroluminescent
JP2006140362A (ja) * 2004-11-15 2006-06-01 Nitto Denko Corp 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法
EP1693904A2 (fr) * 2005-02-18 2006-08-23 Nichia Corporation Dispositif émetteur de lumière avec lentille pour contrôle de caractéristique de distribution de lumière
EP1737050A1 (fr) * 2004-03-24 2006-12-27 Toshiba Lighting & Technology Corporation Dispositif electroluminescent et dispositif d' eclairage
JP2007201444A (ja) * 2005-12-26 2007-08-09 Toshiba Lighting & Technology Corp 発光装置
US7309881B2 (en) 2003-08-12 2007-12-18 Stanley Electric Co., Ltd. Wavelength-converting LED
JP2008270822A (ja) * 2007-04-24 2008-11-06 Samsung Electro Mech Co Ltd 発光ダイオードパッケージ
US8154044B2 (en) 2009-01-15 2012-04-10 Everlight Electronics Co., Ltd. Light emitting diode package structure and method for fabricating the same
JP2012083695A (ja) * 2010-09-16 2012-04-26 Seiko Epson Corp 光源装置およびプロジェクター
JP2013185123A (ja) * 2012-03-09 2013-09-19 Momentive Performance Materials Inc シリコーンゴム組成物
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
KR101784007B1 (ko) 2011-04-13 2017-10-23 엘지이노텍 주식회사 발광 소자 및 이의 제조방법
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
WO2022096102A1 (fr) 2020-11-05 2022-05-12 Hitachi Energy Switzerland Ag Dispositif à semi-conducteur de puissance doté d'une couche de protection super-hydrophobe et d'un module de puissance

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JP5767552B2 (ja) * 2011-10-07 2015-08-19 富士フイルム株式会社 半導体発光装置及びその製造方法
KR101641744B1 (ko) 2011-10-07 2016-07-21 엘지이노텍 주식회사 발광 소자 패키지 및 이를 구비한 백라이트 유닛
KR101655505B1 (ko) * 2013-06-13 2016-09-07 엘지이노텍 주식회사 발광 소자
JP2016225374A (ja) * 2015-05-27 2016-12-28 四国計測工業株式会社 Ｌｅｄ発光装置
WO2017122691A1 (fr) * 2016-01-15 2017-07-20 株式会社ダイセル Matériau antireflet

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JP4705701B2 (ja) * 2003-04-25 2011-06-22 日亜化学工業株式会社 発光装置
US7309881B2 (en) 2003-08-12 2007-12-18 Stanley Electric Co., Ltd. Wavelength-converting LED
US9105817B2 (en) 2003-09-18 2015-08-11 Cree, Inc. Molded chip fabrication method and apparatus
US10164158B2 (en) 2003-09-18 2018-12-25 Cree, Inc. Molded chip fabrication method and apparatus
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US10546978B2 (en) 2003-09-18 2020-01-28 Cree, Inc. Molded chip fabrication method and apparatus
US7812365B2 (en) 2003-10-15 2010-10-12 Nichia Corporation Heat dissipation member, semiconductor apparatus and semiconductor light emitting apparatus
WO2005038935A1 (fr) * 2003-10-15 2005-04-28 Nichia Corporation Dispositif électroluminescent
US7482636B2 (en) 2003-10-15 2009-01-27 Nichia Corporation Light emitting device
JP2005197476A (ja) * 2004-01-07 2005-07-21 Koito Mfg Co Ltd 発光モジュール及び車両用灯具
JP2005243795A (ja) * 2004-02-25 2005-09-08 Matsushita Electric Ind Co Ltd 光半導体装置
EP1737050A4 (fr) * 2004-03-24 2014-03-12 Toshiba Lighting & Technology Dispositif electroluminescent et dispositif d' eclairage
EP1737050A1 (fr) * 2004-03-24 2006-12-27 Toshiba Lighting & Technology Corporation Dispositif electroluminescent et dispositif d' eclairage
JP2008124518A (ja) * 2004-07-02 2008-05-29 Samsung Electro-Mechanics Co Ltd 色混合性の向上されたｒｇｂ発光ダイオードパッケージ
JP2006019677A (ja) * 2004-07-02 2006-01-19 Samsung Electro-Mechanics Co Ltd 色混合性の向上されたｒｇｂ発光ダイオードパッケージ
WO2006006544A1 (fr) * 2004-07-09 2006-01-19 Matsushita Electric Industrial Co., Ltd. Dispositif électroluminescent
JP2006140362A (ja) * 2004-11-15 2006-06-01 Nitto Denko Corp 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法
EP1693904A3 (fr) * 2005-02-18 2010-05-05 Nichia Corporation Dispositif émetteur de lumière avec lentille pour contrôle de caractéristique de distribution de lumière
US9093619B2 (en) 2005-02-18 2015-07-28 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
US8558446B2 (en) 2005-02-18 2013-10-15 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
EP1693904A2 (fr) * 2005-02-18 2006-08-23 Nichia Corporation Dispositif émetteur de lumière avec lentille pour contrôle de caractéristique de distribution de lumière
US8836210B2 (en) 2005-02-18 2014-09-16 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
JP2007201444A (ja) * 2005-12-26 2007-08-09 Toshiba Lighting & Technology Corp 発光装置
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP2008270822A (ja) * 2007-04-24 2008-11-06 Samsung Electro Mech Co Ltd 発光ダイオードパッケージ
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8154044B2 (en) 2009-01-15 2012-04-10 Everlight Electronics Co., Ltd. Light emitting diode package structure and method for fabricating the same
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
JP2012083695A (ja) * 2010-09-16 2012-04-26 Seiko Epson Corp 光源装置およびプロジェクター
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
KR101784007B1 (ko) 2011-04-13 2017-10-23 엘지이노텍 주식회사 발광 소자 및 이의 제조방법
JP2013185123A (ja) * 2012-03-09 2013-09-19 Momentive Performance Materials Inc シリコーンゴム組成物
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DE212020000839U1 (de) 2020-11-05 2023-07-21 Hitachi Energy Switzerland Ag Leistungshalbleitervorrichtung und Leistungsmodul

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