JP2007208279A5 - - Google Patents

Download PDF

Info

Publication number
JP2007208279A5
JP2007208279A5 JP2007065471A JP2007065471A JP2007208279A5 JP 2007208279 A5 JP2007208279 A5 JP 2007208279A5 JP 2007065471 A JP2007065471 A JP 2007065471A JP 2007065471 A JP2007065471 A JP 2007065471A JP 2007208279 A5 JP2007208279 A5 JP 2007208279A5
Authority
JP
Japan
Prior art keywords
substrate
substrate table
level
surrounding structure
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007065471A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007208279A (ja
JP4553913B2 (ja
Filing date
Publication date
Application filed filed Critical
Publication of JP2007208279A publication Critical patent/JP2007208279A/ja
Publication of JP2007208279A5 publication Critical patent/JP2007208279A5/ja
Application granted granted Critical
Publication of JP4553913B2 publication Critical patent/JP4553913B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007065471A 2002-11-12 2007-03-14 リソグラフィ投影装置 Expired - Fee Related JP4553913B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02257822 2002-11-12
EP03253636 2003-06-09

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003417260A Division JP3953460B2 (ja) 2002-11-12 2003-11-11 リソグラフィ投影装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010102149A Division JP5005793B2 (ja) 2002-11-12 2010-04-27 リソグラフィ投影装置

Publications (3)

Publication Number Publication Date
JP2007208279A JP2007208279A (ja) 2007-08-16
JP2007208279A5 true JP2007208279A5 (enExample) 2009-05-14
JP4553913B2 JP4553913B2 (ja) 2010-09-29

Family

ID=32852221

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2003417260A Expired - Fee Related JP3953460B2 (ja) 2002-11-12 2003-11-11 リソグラフィ投影装置
JP2007065471A Expired - Fee Related JP4553913B2 (ja) 2002-11-12 2007-03-14 リソグラフィ投影装置
JP2010102149A Expired - Fee Related JP5005793B2 (ja) 2002-11-12 2010-04-27 リソグラフィ投影装置
JP2012027270A Expired - Fee Related JP5400910B2 (ja) 2002-11-12 2012-02-10 リソグラフィ投影装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2003417260A Expired - Fee Related JP3953460B2 (ja) 2002-11-12 2003-11-11 リソグラフィ投影装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010102149A Expired - Fee Related JP5005793B2 (ja) 2002-11-12 2010-04-27 リソグラフィ投影装置
JP2012027270A Expired - Fee Related JP5400910B2 (ja) 2002-11-12 2012-02-10 リソグラフィ投影装置

Country Status (6)

Country Link
US (10) US7199858B2 (enExample)
JP (4) JP3953460B2 (enExample)
KR (1) KR100588124B1 (enExample)
CN (2) CN100568101C (enExample)
SG (1) SG121819A1 (enExample)
TW (1) TWI251127B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus

Families Citing this family (369)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7198055B2 (en) * 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100588124B1 (ko) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004053952A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
EP1571697A4 (en) * 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
KR101036114B1 (ko) * 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
US7948604B2 (en) * 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
SG158745A1 (en) 2002-12-10 2010-02-26 Nikon Corp Exposure apparatus and method for producing device
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
AU2003295177A1 (en) * 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
EP1598855B1 (en) * 2003-02-26 2015-04-22 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
KR101345474B1 (ko) 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2004090956A1 (ja) * 2003-04-07 2004-10-21 Nikon Corporation 露光装置及びデバイス製造方法
KR101547077B1 (ko) 2003-04-09 2015-08-25 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
JP4488004B2 (ja) * 2003-04-09 2010-06-23 株式会社ニコン 液浸リソグラフィ流体制御システム
JP4656057B2 (ja) * 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
CN1771463A (zh) * 2003-04-10 2006-05-10 株式会社尼康 用于沉浸光刻装置收集液体的溢出通道
CN101061429B (zh) * 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
KR101323993B1 (ko) 2003-04-10 2013-10-30 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
KR101369582B1 (ko) 2003-04-17 2014-03-04 가부시키가이샤 니콘 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2004102646A1 (ja) * 2003-05-15 2004-11-25 Nikon Corporation 露光装置及びデバイス製造方法
TWI614794B (zh) 2003-05-23 2018-02-11 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
EP2453465A3 (en) * 2003-05-28 2018-01-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing a device
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101520591B1 (ko) * 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
TWI543235B (zh) * 2003-06-19 2016-07-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1975721A1 (en) * 2003-06-30 2008-10-01 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7236232B2 (en) * 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
JP4697138B2 (ja) * 2003-07-08 2011-06-08 株式会社ニコン 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法
KR101296501B1 (ko) 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1643543B1 (en) * 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
SG109000A1 (en) 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1500982A1 (en) 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1650787A4 (en) * 2003-07-25 2007-09-19 Nikon Corp INVESTIGATION METHOD AND INVESTIGATION DEVICE FOR AN OPTICAL PROJECTION SYSTEM AND METHOD OF MANUFACTURING AN OPTICAL PROJECTION SYSTEM
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
CN104122760B (zh) 2003-07-28 2017-04-19 株式会社尼康 曝光装置、器件制造方法
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20180120816A (ko) 2003-08-21 2018-11-06 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
TWI471705B (zh) * 2003-08-26 2015-02-01 尼康股份有限公司 Optical components and exposure devices
US8149381B2 (en) * 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2261740B1 (en) 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI475596B (zh) * 2003-08-29 2015-03-01 尼康股份有限公司 A liquid recovery device, an exposure device, an exposure method, and an element manufacturing method
SG145780A1 (en) * 2003-08-29 2008-09-29 Nikon Corp Exposure apparatus and device fabricating method
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
CN100394244C (zh) * 2003-09-03 2008-06-11 株式会社尼康 为浸没光刻提供流体的装置和方法
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
US7158211B2 (en) * 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1670043B1 (en) 2003-09-29 2013-02-27 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP1519231B1 (en) * 2003-09-29 2005-12-21 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
WO2005036623A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
EP1524557A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
TWI569308B (zh) 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
KR101117429B1 (ko) * 2003-10-31 2012-04-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
US8854602B2 (en) * 2003-11-24 2014-10-07 Asml Netherlands B.V. Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1890779B (zh) * 2003-12-03 2011-06-08 株式会社尼康 曝光装置、曝光方法和器件制造方法
EP3139214B1 (en) 2003-12-03 2019-01-30 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP4513534B2 (ja) * 2003-12-03 2010-07-28 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP2005175016A (ja) * 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
KR101111363B1 (ko) * 2003-12-15 2012-04-12 가부시키가이샤 니콘 투영노광장치 및 스테이지 장치, 그리고 노광방법
DE602004030481D1 (de) * 2003-12-15 2011-01-20 Nippon Kogaku Kk Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
JP4600286B2 (ja) * 2003-12-16 2010-12-15 株式会社ニコン ステージ装置、露光装置、及び露光方法
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
JP2005191394A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
ATE467902T1 (de) * 2004-01-05 2010-05-15 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
JP4572539B2 (ja) * 2004-01-19 2010-11-04 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076321A1 (ja) 2004-02-03 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法
US8208119B2 (en) * 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
TWI379344B (en) 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4797984B2 (ja) * 2004-02-19 2011-10-19 株式会社ニコン 露光装置及びデバイス製造方法
US20070030467A1 (en) * 2004-02-19 2007-02-08 Nikon Corporation Exposure apparatus, exposure method, and device fabricating method
WO2005081063A1 (ja) * 2004-02-20 2005-09-01 Daikin Industries, Ltd. 液浸リソグラフィーに用いるレジスト積層体
JP4973754B2 (ja) * 2004-03-04 2012-07-11 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP4622340B2 (ja) * 2004-03-04 2011-02-02 株式会社ニコン 露光装置、デバイス製造方法
JP2005259870A (ja) * 2004-03-10 2005-09-22 Nikon Corp 基板保持装置、ステージ装置及び露光装置並びに露光方法
WO2005093792A1 (ja) * 2004-03-25 2005-10-06 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP4525676B2 (ja) 2004-03-25 2010-08-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JP2005302880A (ja) * 2004-04-08 2005-10-27 Canon Inc 液浸式露光装置
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) * 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005119368A2 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
JP4517341B2 (ja) * 2004-06-04 2010-08-04 株式会社ニコン 露光装置、ノズル部材、及びデバイス製造方法
CN1954408B (zh) * 2004-06-04 2012-07-04 尼康股份有限公司 曝光装置、曝光方法及元件制造方法
WO2005122218A1 (ja) 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP4826146B2 (ja) * 2004-06-09 2011-11-30 株式会社ニコン 露光装置、デバイス製造方法
EP1788617B1 (en) * 2004-06-09 2013-04-10 Nikon Corporation Substrate holding device, exposure apparatus having the same and method for producing a device
US8508713B2 (en) * 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8373843B2 (en) 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP5130609B2 (ja) * 2004-06-10 2013-01-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
KR101310472B1 (ko) 2004-06-10 2013-09-24 가부시키가이샤 니콘 엔지니어링 노광 장치, 노광 방법 및 디바이스 제조 방법
US8717533B2 (en) * 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
CN100547730C (zh) * 2004-06-10 2009-10-07 尼康股份有限公司 曝光装置及元件制造方法
KR101700546B1 (ko) 2004-06-10 2017-01-26 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
US20070222959A1 (en) * 2004-06-10 2007-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7481867B2 (en) 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
KR101378688B1 (ko) 2004-06-21 2014-03-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8698998B2 (en) * 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
KR101245070B1 (ko) * 2004-06-21 2013-03-18 가부시키가이샤 니콘 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
US7517639B2 (en) 2004-06-23 2009-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring arrangements for immersion lithography systems
US7501226B2 (en) * 2004-06-23 2009-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Immersion lithography system with wafer sealing mechanisms
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102004033208B4 (de) * 2004-07-09 2010-04-01 Vistec Semiconductor Systems Gmbh Vorrichtung zur Inspektion eines mikroskopischen Bauteils mit einem Immersionsobjektiv
KR101342330B1 (ko) 2004-07-12 2013-12-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7161663B2 (en) * 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
EP3267257B1 (en) * 2004-08-03 2019-02-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4983257B2 (ja) * 2004-08-18 2012-07-25 株式会社ニコン 露光装置、デバイス製造方法、計測部材、及び計測方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
KR101187611B1 (ko) * 2004-09-01 2012-10-08 가부시키가이샤 니콘 기판 홀더, 스테이지 장치, 및 노광 장치
TW200615706A (en) * 2004-09-17 2006-05-16 Nikon Corp Substrate for exposure, exposure method and method for manufacturing a device
WO2006030908A1 (ja) 2004-09-17 2006-03-23 Nikon Corporation 基板保持装置、露光装置、及びデバイス製造方法
US7522261B2 (en) * 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7894040B2 (en) 2004-10-05 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7209213B2 (en) * 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006041100A1 (ja) * 2004-10-15 2006-04-20 Nikon Corporation 露光装置及びデバイス製造方法
JP4625673B2 (ja) * 2004-10-15 2011-02-02 株式会社東芝 露光方法及び露光装置
US7379155B2 (en) * 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119876B2 (en) * 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006047127A1 (en) * 2004-10-21 2006-05-04 Saint-Gobain Ceramics & Plastics, Inc. Optical lens elements, semiconductor lithographic patterning apparatus, and methods for processing semiconductor devices
EP1814144B1 (en) * 2004-10-26 2012-06-06 Nikon Corporation Substrate processing method and device production system
KR101318037B1 (ko) * 2004-11-01 2013-10-14 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7414699B2 (en) * 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7230681B2 (en) * 2004-11-18 2007-06-12 International Business Machines Corporation Method and apparatus for immersion lithography
TWI649790B (zh) * 2004-11-18 2019-02-01 日商尼康股份有限公司 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法
US7362412B2 (en) * 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
KR101191056B1 (ko) * 2004-11-19 2012-10-15 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법, 노광 장치 및 디바이스 제조 방법
US7145630B2 (en) * 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7256121B2 (en) * 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
US7161654B2 (en) * 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7446850B2 (en) * 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196770B2 (en) * 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7248334B2 (en) * 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
US7365827B2 (en) * 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352440B2 (en) * 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101585310B1 (ko) * 2004-12-15 2016-01-14 가부시키가이샤 니콘 기판 유지 장치, 노광 장치 및 디바이스 제조방법
JP2006173527A (ja) * 2004-12-20 2006-06-29 Sony Corp 露光装置
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) * 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US20060147821A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
SG124359A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG124351A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2006202825A (ja) * 2005-01-18 2006-08-03 Jsr Corp 液浸型露光装置
US7903233B2 (en) * 2005-01-21 2011-03-08 Nikon Corporation Offset partial ring seal in immersion lithographic system
US8692973B2 (en) * 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR20160135859A (ko) * 2005-01-31 2016-11-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2006084641A2 (en) 2005-02-10 2006-08-17 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US20070258068A1 (en) * 2005-02-17 2007-11-08 Hiroto Horikawa Exposure Apparatus, Exposure Method, and Device Fabricating Method
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224431B2 (en) * 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006270057A (ja) * 2005-02-28 2006-10-05 Canon Inc 露光装置
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7324185B2 (en) * 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684010B2 (en) * 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
TWI424260B (zh) * 2005-03-18 2014-01-21 尼康股份有限公司 A board member, a substrate holding device, an exposure apparatus and an exposure method, and a device manufacturing method
US7330238B2 (en) * 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7291850B2 (en) * 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
KR101344142B1 (ko) 2005-04-25 2013-12-23 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
JP4752320B2 (ja) * 2005-04-28 2011-08-17 株式会社ニコン 基板保持装置及び露光装置、基板保持方法、露光方法、並びにデバイス製造方法
WO2006118258A1 (ja) * 2005-04-28 2006-11-09 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101762083B1 (ko) 2005-05-12 2017-07-26 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
JP2006339448A (ja) 2005-06-02 2006-12-14 Canon Inc 受光ユニットを有する露光装置
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7468779B2 (en) * 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7170583B2 (en) * 2005-06-29 2007-01-30 Asml Netherlands B.V. Lithographic apparatus immersion damage control
US7535644B2 (en) * 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US8054445B2 (en) * 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7751026B2 (en) * 2005-08-25 2010-07-06 Nikon Corporation Apparatus and method for recovering fluid for immersion lithography
US8202460B2 (en) * 2005-09-22 2012-06-19 International Business Machines Corporation Microelectronic substrate having removable edge extension element
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
JP3997245B2 (ja) * 2005-10-04 2007-10-24 キヤノン株式会社 露光装置及びデバイス製造方法
JP3997244B2 (ja) * 2005-10-04 2007-10-24 キヤノン株式会社 露光装置及びデバイス製造方法
US7411658B2 (en) * 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4125315B2 (ja) * 2005-10-11 2008-07-30 キヤノン株式会社 露光装置及びデバイス製造方法
JP2007123525A (ja) * 2005-10-27 2007-05-17 Toshiba Corp 液浸露光装置及び半導体装置の製造方法
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7656501B2 (en) * 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR100768849B1 (ko) * 2005-12-06 2007-10-22 엘지전자 주식회사 계통 연계형 연료전지 시스템의 전원공급장치 및 방법
EP3327759A1 (en) 2005-12-08 2018-05-30 Nikon Corporation Substrate holding apparatus, exposure apparatus, exposing method, and device fabricating method
US7420194B2 (en) * 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7839483B2 (en) 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007083592A1 (ja) * 2006-01-17 2007-07-26 Nikon Corporation 基板保持装置及び露光装置、並びにデバイス製造方法
JP2007201252A (ja) * 2006-01-27 2007-08-09 Canon Inc 露光装置及びデバイス製造方法
US7446859B2 (en) * 2006-01-27 2008-11-04 International Business Machines Corporation Apparatus and method for reducing contamination in immersion lithography
US20070177119A1 (en) * 2006-02-02 2007-08-02 Keiko Chiba Exposure apparatus and device manufacturing method
US20070182943A1 (en) * 2006-02-06 2007-08-09 Francis Goodwin Debris apparatus, system, and method
US7787101B2 (en) * 2006-02-16 2010-08-31 International Business Machines Corporation Apparatus and method for reducing contamination in immersion lithography
US7893047B2 (en) * 2006-03-03 2011-02-22 Arch Chemicals, Inc. Biocide composition comprising pyrithione and pyrrole derivatives
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US7310132B2 (en) * 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7760324B2 (en) * 2006-03-20 2010-07-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007266074A (ja) * 2006-03-27 2007-10-11 Toshiba Corp 半導体装置の製造方法及び液浸リソグラフィーシステム
US8027019B2 (en) * 2006-03-28 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007266504A (ja) 2006-03-29 2007-10-11 Canon Inc 露光装置
EP1843206B1 (en) * 2006-04-06 2012-09-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477158B2 (en) * 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US8144305B2 (en) 2006-05-18 2012-03-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
CN102109773A (zh) * 2006-05-22 2011-06-29 株式会社尼康 曝光方法、曝光装置以及维修方法
US20070273856A1 (en) * 2006-05-25 2007-11-29 Nikon Corporation Apparatus and methods for inhibiting immersion liquid from flowing below a substrate
JP2008034801A (ja) * 2006-06-30 2008-02-14 Canon Inc 露光装置およびデバイス製造方法
US8570484B2 (en) 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
WO2008029884A1 (en) * 2006-09-08 2008-03-13 Nikon Corporation Cleaning member, cleaning method and device manufacturing method
US7946303B2 (en) 2006-09-29 2011-05-24 Lam Research Corporation Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus
US20080100812A1 (en) * 2006-10-26 2008-05-01 Nikon Corporation Immersion lithography system and method having a wafer chuck made of a porous material
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8208116B2 (en) * 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8237085B2 (en) * 2006-11-17 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and laser irradiation method
US8045135B2 (en) * 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US8013975B2 (en) * 2006-12-01 2011-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080156356A1 (en) 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
US9632425B2 (en) * 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7791709B2 (en) * 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
US20080137055A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8634052B2 (en) * 2006-12-13 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and method involving a ring to cover a gap between a substrate and a substrate table
US8416383B2 (en) 2006-12-13 2013-04-09 Asml Netherlands B.V. Lithographic apparatus and method
JP2008147577A (ja) * 2006-12-13 2008-06-26 Canon Inc 露光装置及びデバイス製造方法
US7755740B2 (en) * 2007-02-07 2010-07-13 Canon Kabushiki Kaisha Exposure apparatus
US8654305B2 (en) 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US20080198348A1 (en) * 2007-02-20 2008-08-21 Nikon Corporation Apparatus and methods for minimizing force variation from immersion liquid in lithography systems
US7692765B2 (en) * 2007-02-21 2010-04-06 Asml Netherlands B.V. Lithographic apparatus and method of removing liquid
US8760621B2 (en) 2007-03-12 2014-06-24 Asml Netherlands B.V. Lithographic apparatus and method
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7900641B2 (en) * 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
JP2009033111A (ja) 2007-05-28 2009-02-12 Nikon Corp 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
US8514365B2 (en) * 2007-06-01 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US8264662B2 (en) * 2007-06-18 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. In-line particle detection for immersion lithography
US20090009733A1 (en) * 2007-07-06 2009-01-08 Canon Kabushiki Kaisha Exposure apparatus
US8705010B2 (en) 2007-07-13 2014-04-22 Mapper Lithography Ip B.V. Lithography system, method of clamping and wafer table
TWI541615B (zh) * 2007-07-13 2016-07-11 瑪波微影Ｉｐ公司 在微影裝置中交換晶圓的方法
JP4961299B2 (ja) 2007-08-08 2012-06-27 キヤノン株式会社 露光装置およびデバイス製造方法
US8144309B2 (en) * 2007-09-05 2012-03-27 Asml Netherlands B.V. Imprint lithography
US8681308B2 (en) 2007-09-13 2014-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
NL1035942A1 (nl) * 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
SG185313A1 (en) 2007-10-16 2012-11-29 Nikon Corp Illumination optical system, exposure apparatus, and device manufacturing method
CN101681123B (zh) 2007-10-16 2013-06-12 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
NL1036194A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL1036187A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL1036211A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic Apparatus and Device Manufacturing Method.
NL1036186A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5369443B2 (ja) 2008-02-05 2013-12-18 株式会社ニコン ステージ装置、露光装置、露光方法、及びデバイス製造方法
US20090218743A1 (en) * 2008-02-29 2009-09-03 Nikon Corporation Substrate holding apparatus, exposure apparatus, exposing method, device fabricating method, plate member, and wall
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
NL1036709A1 (nl) * 2008-04-24 2009-10-27 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
CN105606344B (zh) 2008-05-28 2019-07-30 株式会社尼康 照明光学系统、照明方法、曝光装置以及曝光方法
NL1036924A1 (nl) * 2008-06-02 2009-12-03 Asml Netherlands Bv Substrate table, lithographic apparatus and device manufacturing method.
EP2131242A1 (en) * 2008-06-02 2009-12-09 ASML Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
NL2003363A (en) * 2008-09-10 2010-03-15 Asml Netherlands Bv Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method.
NL2003470A (en) * 2008-10-07 2010-04-08 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US8634055B2 (en) * 2008-10-22 2014-01-21 Nikon Corporation Apparatus and method to control vacuum at porous material using multiple porous materials
US8477284B2 (en) 2008-10-22 2013-07-02 Nikon Corporation Apparatus and method to control vacuum at porous material using multiple porous materials
NL2003575A (en) * 2008-10-29 2010-05-03 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL2003638A (en) 2008-12-03 2010-06-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
EP2196857A3 (en) * 2008-12-09 2010-07-21 ASML Netherlands BV Lithographic apparatus and device manufacturing method
JP2010140958A (ja) * 2008-12-09 2010-06-24 Canon Inc 露光装置及びデバイス製造方法
NL2004807A (en) * 2009-06-30 2011-01-04 Asml Netherlands Bv Substrate table for a lithographic apparatus, litographic apparatus, method of using a substrate table and device manufacturing method.
US8913230B2 (en) * 2009-07-02 2014-12-16 Canon Nanotechnologies, Inc. Chucking system with recessed support feature
DE102010038748A1 (de) * 2009-08-07 2011-03-24 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines Spiegels mit wenigstens zwei Spiegelflächen, Spiegel einer Projektionsbelichtungsanlage der Mikrolithographie und Projektionsbelichtungsanlage
NL2005126A (en) * 2009-09-21 2011-03-22 Asml Netherlands Bv Lithographic apparatus, coverplate and device manufacturing method.
NL2005207A (en) * 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
NL1038213C2 (en) * 2010-03-04 2012-10-08 Mapper Lithography Ip Bv Substrate support structure, clamp preparation unit, and lithography system.
NL2006203A (en) * 2010-03-16 2011-09-19 Asml Netherlands Bv Cover for a substrate table, substrate table for a lithographic apparatus, lithographic apparatus, and device manufacturing method.
NL2006244A (en) 2010-03-16 2011-09-19 Asml Netherlands Bv Lithographic apparatus, cover for use in a lithographic apparatus and method for designing a cover for use in a lithographic apparatus.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
JP5313293B2 (ja) 2010-05-19 2013-10-09 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、リソグラフィ装置で使用する流体ハンドリング構造およびデバイス製造方法
NL2007768A (en) 2010-12-14 2012-06-18 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
NL2007802A (en) 2010-12-21 2012-06-25 Asml Netherlands Bv A substrate table, a lithographic apparatus and a device manufacturing method.
JP2012134290A (ja) * 2010-12-21 2012-07-12 Nikon Corp 露光装置、露光装置のステージ製造方法及びデバイス製造方法
NL2008979A (en) 2011-07-11 2013-01-14 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
NL2008980A (en) 2011-07-11 2013-01-14 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
JP5778093B2 (ja) 2011-08-10 2015-09-16 エーエスエムエル ネザーランズ ビー．ブイ． 基板テーブルアセンブリ、液浸リソグラフィ装置及びデバイス製造方法
EP2856262B1 (en) * 2012-05-29 2019-09-25 ASML Netherlands B.V. Support apparatus, lithographic apparatus and device manufacturing method
WO2013178438A1 (en) 2012-05-29 2013-12-05 Asml Netherlands B.V. Object holder and lithographic apparatus
JP2014045090A (ja) * 2012-08-27 2014-03-13 Toshiba Corp 液浸露光装置
JP6171293B2 (ja) * 2012-09-13 2017-08-02 株式会社ニコン 露光装置及びデバイス製造方法
US9177849B2 (en) * 2012-12-18 2015-11-03 Intermolecular, Inc. Chuck for mounting a semiconductor wafer for liquid immersion processing
US10361097B2 (en) 2012-12-31 2019-07-23 Globalwafers Co., Ltd. Apparatus for stressing semiconductor substrates
CN107004574B (zh) * 2014-12-12 2020-06-30 佳能株式会社 基板保持装置、光刻设备以及物品制造方法
US10317804B2 (en) 2015-12-08 2019-06-11 Asml Netherlands B.V. Substrate table, lithographic apparatus and method of operating a lithographic apparatus
WO2017102162A1 (en) * 2015-12-15 2017-06-22 Asml Netherlands B.V. A substrate holder, a lithographic apparatus and method of manufacturing devices
US10705426B2 (en) * 2016-05-12 2020-07-07 Asml Netherlands B.V. Extraction body for lithographic apparatus
US10978332B2 (en) * 2016-10-05 2021-04-13 Prilit Optronics, Inc. Vacuum suction apparatus
JP6477793B2 (ja) * 2017-07-05 2019-03-06 株式会社ニコン 露光装置及びデバイス製造方法
KR102542369B1 (ko) * 2017-10-12 2023-06-13 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치에 사용하기 위한 기판 홀더
US10907787B2 (en) 2018-10-18 2021-02-02 Marche International Llc Light engine and method of simulating a flame
JP2019070861A (ja) * 2019-02-06 2019-05-09 株式会社ニコン 露光装置及び露光方法並びにデバイス製造方法
CN112304572B (zh) * 2019-07-30 2022-01-28 华为技术有限公司 波前标定方法和装置
JP2025502007A (ja) * 2022-01-31 2025-01-24 エーエスエムエル ネザーランズ ビー．ブイ． 基板テーブル、リソグラフィ装置、スティッカ、カバーリング及びリソグラフィ装置を動作する方法
CN121002444A (zh) * 2023-04-05 2025-11-21 Asml荷兰有限公司 盖环、衬底支撑件和光刻设备

Family Cites Families (305)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE224448C (enExample)
DE221563C (enExample)
DE242880C (enExample)
DE206607C (enExample)
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) * 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
US4280054A (en) 1979-04-30 1981-07-21 Varian Associates, Inc. X-Y Work table
DE2963537D1 (en) 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
JPS5645021A (en) 1979-09-19 1981-04-24 Hitachi Ltd Moving apparatus
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
US4396164A (en) * 1980-04-11 1983-08-02 Minolta Camera Kabushiki Kaisha Easy loading mechanism for cameras
JPS5754317A (en) * 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
US4390273A (en) * 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD242880A1 (de) 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6265326U (enExample) 1985-10-16 1987-04-23
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS62121417U (enExample) 1986-01-24 1987-08-01
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPS63157419U (enExample) 1987-03-31 1988-10-14
US5040020A (en) * 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH0228312A (ja) * 1988-07-18 1990-01-30 Nikon Corp 露光装置
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
WO1991017483A1 (de) * 1990-05-02 1991-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Belichtungsvorrichtung
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JP3218478B2 (ja) 1992-09-04 2001-10-15 株式会社ニコン 投影露光装置及び方法
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
US6078380A (en) * 1991-10-08 2000-06-20 Nikon Corporation Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
JPH05251544A (ja) 1992-03-05 1993-09-28 Fujitsu Ltd 搬送装置
JPH05304072A (ja) 1992-04-08 1993-11-16 Nec Corp 半導体装置の製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) * 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JP3747958B2 (ja) 1995-04-07 2006-02-22 株式会社ニコン 反射屈折光学系
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5528118A (en) * 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) * 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5517344A (en) * 1994-05-20 1996-05-14 Prime View Hk Limited System for protection of drive circuits formed on a substrate of a liquid crystal display
US5633968A (en) * 1994-07-18 1997-05-27 Sheem; Sang K. Face-lock interconnection means for optical fibers and other optical components and manufacturing methods of the same
US5623853A (en) * 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08171054A (ja) 1994-12-16 1996-07-02 Nikon Corp 反射屈折光学系
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3287761B2 (ja) 1995-06-19 2002-06-04 日本電信電話株式会社 真空吸着装置および加工装置
US5883704A (en) 1995-08-07 1999-03-16 Nikon Corporation Projection exposure apparatus wherein focusing of the apparatus is changed by controlling the temperature of a lens element of the projection optical system
JPH09184787A (ja) 1995-12-28 1997-07-15 Olympus Optical Co Ltd 光学レンズ用解析評価装置
EP0824722B1 (en) * 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
KR970067585A (ko) 1996-03-25 1997-10-13 오노 시게오 결상특성의 측정방법 및 투영노광방법
JPH1020195A (ja) 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系
US6104687A (en) * 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
JPH1092728A (ja) 1996-09-11 1998-04-10 Canon Inc 基板保持装置およびこれを用いた露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH10135316A (ja) 1996-10-28 1998-05-22 Sony Corp 薄板状基板の真空吸着方法及びその真空吸着テーブル装置
JPH10160582A (ja) 1996-12-02 1998-06-19 Nikon Corp 透過波面測定用干渉計
DE69717975T2 (de) * 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
DE69711929T2 (de) 1997-01-29 2002-09-05 Micronic Laser Systems Ab, Taeby Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6262796B1 (en) 1997-03-10 2001-07-17 Asm Lithography B.V. Positioning device having two object holders
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) * 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JP3495891B2 (ja) 1997-10-22 2004-02-09 株式会社湯山製作所 薬剤分割包装装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
KR20010034274A (ko) 1998-01-29 2001-04-25 오노 시게오 조도계 및 노광장치
JPH11239758A (ja) 1998-02-26 1999-09-07 Dainippon Screen Mfg Co Ltd 基板処理装置
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US5997963A (en) * 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
JP4505989B2 (ja) 1998-05-19 2010-07-21 株式会社ニコン 収差測定装置並びに測定方法及び該装置を備える投影露光装置並びに該方法を用いるデバイス製造方法、露光方法
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000097616A (ja) 1998-09-22 2000-04-07 Nikon Corp 干渉計
US6333775B1 (en) 1999-01-13 2001-12-25 Euv Llc Extreme-UV lithography vacuum chamber zone seal
JP3796369B2 (ja) 1999-03-24 2006-07-12 キヤノン株式会社 干渉計を搭載した投影露光装置
TWI242111B (en) * 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
TW552480B (en) 1999-04-19 2003-09-11 Asml Netherlands Bv Moveable support in a vacuum chamber and its application in lithographic projection apparatus
US6809802B1 (en) 1999-08-19 2004-10-26 Canon Kabushiki Kaisha Substrate attracting and holding system for use in exposure apparatus
AU5653699A (en) 1999-09-20 2001-04-24 Nikon Corporation Parallel link mechanism, exposure system and method of manufacturing the same, and method of manufacturing devices
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
JP2001118773A (ja) 1999-10-18 2001-04-27 Nikon Corp ステージ装置及び露光装置
WO2001048800A1 (en) 1999-12-24 2001-07-05 Ebara Corporation Semiconductor wafer processing apparatus and processing method
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US6494955B1 (en) 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
JP2001242300A (ja) * 2000-03-02 2001-09-07 Sony Corp 電子ビーム照射装置
JP2001272604A (ja) * 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
KR100833275B1 (ko) 2000-05-03 2008-05-28 에이에스엠엘 유에스, 인크. 정화 가스를 이용한 비접촉식 시일
JP2001358056A (ja) 2000-06-15 2001-12-26 Canon Inc 露光装置
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
JP2002071513A (ja) 2000-08-28 2002-03-08 Nikon Corp 液浸系顕微鏡対物レンズ用干渉計および液浸系顕微鏡対物レンズの評価方法
JP4692862B2 (ja) 2000-08-28 2011-06-01 株式会社ニコン 検査装置、該検査装置を備えた露光装置、およびマイクロデバイスの製造方法
TW497013B (en) * 2000-09-07 2002-08-01 Asm Lithography Bv Method for calibrating a lithographic projection apparatus and apparatus capable of applying such a method
JP4112790B2 (ja) 2000-09-25 2008-07-02 英二 安田 フトン籠形成用型枠手段及びそれを用いた施工方法
JP2002170754A (ja) 2000-11-30 2002-06-14 Nikon Corp 露光装置、光学特性検出方法及び露光方法
JP2002170765A (ja) 2000-12-04 2002-06-14 Nikon Corp ステージ装置及び露光装置
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
WO2002063613A2 (en) 2001-02-07 2002-08-15 University Of Rochester A system and method for high resolution optical imaging, data storage, lithography, and inspection
EP1231513A1 (en) 2001-02-08 2002-08-14 Asm Lithography B.V. Lithographic projection apparatus with adjustable focal surface
US20060285100A1 (en) 2001-02-13 2006-12-21 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
EP1231514A1 (en) 2001-02-13 2002-08-14 Asm Lithography B.V. Measurement of wavefront aberrations in a lithographic projection apparatus
JP4921644B2 (ja) 2001-02-27 2012-04-25 オリンパス株式会社 波面測定装置および波面測定方法
US20020123040A1 (en) * 2001-03-01 2002-09-05 Feldman Sanford H. Novel guinea pig adenovirus antigen
JP2002296005A (ja) 2001-03-29 2002-10-09 Nikon Corp アライメント方法、点回折干渉計測装置、及び該装置を用いた高精度投影レンズ製造方法
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US6598974B2 (en) 2001-05-08 2003-07-29 Johnson & Johnson Vision Care, Inc. Method and apparatus for measuring wavefront aberrations
JP2002358556A (ja) 2001-05-31 2002-12-13 Omron Corp 媒体計数装置および紙葉類処理装置
US6600547B2 (en) * 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
US6801301B2 (en) 2001-10-12 2004-10-05 Canon Kabushiki Kaisha Exposure apparatus
WO2003040830A2 (en) 2001-11-07 2003-05-15 Applied Materials, Inc. Optical spot grid array printer
US6842256B2 (en) 2001-11-15 2005-01-11 Zygo Corporation Compensating for effects of variations in gas refractivity in interferometers
JP2003158173A (ja) * 2001-11-20 2003-05-30 Oki Electric Ind Co Ltd ウェハホルダ
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10210899A1 (de) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
CN1650401B (zh) 2002-04-09 2010-04-21 株式会社尼康 曝光方法与曝光装置、以及器件的制造方法
JP3958993B2 (ja) 2002-05-14 2007-08-15 東京エレクトロン株式会社 液処理装置および液処理方法
US20040011780A1 (en) 2002-07-22 2004-01-22 Applied Materials, Inc. Method for achieving a desired process uniformity by modifying surface topography of substrate heater
US7092231B2 (en) * 2002-08-23 2006-08-15 Asml Netherlands B.V. Chuck, lithographic apparatus and device manufacturing method
TWI249082B (en) 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN101424881B (zh) * 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
KR100588124B1 (ko) * 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
US9482966B2 (en) * 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121818A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60319658T2 (de) * 2002-11-29 2009-04-02 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
KR20050085026A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
JP4529433B2 (ja) 2002-12-10 2010-08-25 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
WO2004053957A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 面位置検出装置、露光方法、及びデバイス製造方法
KR101036114B1 (ko) 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
EP1571701A4 (en) 2002-12-10 2008-04-09 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
WO2004053952A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
CN100429748C (zh) 2002-12-10 2008-10-29 株式会社尼康 曝光装置和器件制造方法
SG158745A1 (en) 2002-12-10 2010-02-26 Nikon Corp Exposure apparatus and method for producing device
DE60326384D1 (de) 2002-12-13 2009-04-09 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
ATE335272T1 (de) 2002-12-19 2006-08-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7112727B2 (en) * 2002-12-20 2006-09-26 Peotec Seeds S.R.L. Mutant allele of tomato
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
JP4488004B2 (ja) 2003-04-09 2010-06-23 株式会社ニコン 液浸リソグラフィ流体制御システム
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
CN1771463A (zh) 2003-04-10 2006-05-10 株式会社尼康 用于沉浸光刻装置收集液体的溢出通道
KR101323993B1 (ko) 2003-04-10 2013-10-30 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
CN101061429B (zh) 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
KR101369582B1 (ko) 2003-04-17 2014-03-04 가부시키가이샤 니콘 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
EP1477856A1 (en) 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
JP2005277363A (ja) 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
TWI282487B (en) 2003-05-23 2007-06-11 Canon Kk Projection optical system, exposure apparatus, and device manufacturing method
JP5143331B2 (ja) 2003-05-28 2013-02-13 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
EP2453465A3 (en) 2003-05-28 2018-01-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing a device
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
KR101520591B1 (ko) * 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
TWI543235B (zh) * 2003-06-19 2016-07-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
DE60308161T2 (de) * 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494074A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
JP4697138B2 (ja) * 2003-07-08 2011-06-08 株式会社ニコン 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法
SG109000A1 (en) * 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
EP1500982A1 (en) * 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
EP1650787A4 (en) * 2003-07-25 2007-09-19 Nikon Corp INVESTIGATION METHOD AND INVESTIGATION DEVICE FOR AN OPTICAL PROJECTION SYSTEM AND METHOD OF MANUFACTURING AN OPTICAL PROJECTION SYSTEM
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7884964B2 (en) * 2003-08-05 2011-02-08 Xerox Corporation Methods and systems for controlling out-of-gamut memory and index colors
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
SG145780A1 (en) 2003-08-29 2008-09-29 Nikon Corp Exposure apparatus and device fabricating method
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP3870182B2 (ja) * 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
EP1670043B1 (en) 2003-09-29 2013-02-27 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
US8854602B2 (en) 2003-11-24 2014-10-07 Asml Netherlands B.V. Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4188810B2 (ja) * 2003-11-26 2008-12-03 富士フイルム株式会社 カメラ付携帯機器
US7125652B2 (en) * 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175016A (ja) * 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101150037B1 (ko) 2004-01-14 2012-07-02 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
JP2007520893A (ja) 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
JP4018647B2 (ja) 2004-02-09 2007-12-05 キヤノン株式会社 投影露光装置およびデバイス製造方法
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
CN101727021A (zh) 2004-02-13 2010-06-09 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜
JP2007523383A (ja) 2004-02-18 2007-08-16 コーニング インコーポレイテッド 深紫外光による大開口数結像のための反射屈折結像光学系
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060244938A1 (en) 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
KR20170129271A (ko) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4913041B2 (ja) 2004-06-04 2012-04-11 カール・ツァイス・エスエムティー・ゲーエムベーハー 強度変化の補償を伴う投影系及びそのための補償素子
WO2005119368A2 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
EP1788617B1 (en) 2004-06-09 2013-04-10 Nikon Corporation Substrate holding device, exposure apparatus having the same and method for producing a device
US7532310B2 (en) * 2004-10-22 2009-05-12 Asml Netherlands B.V. Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck
US7411657B2 (en) * 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7420194B2 (en) * 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
WO2007083592A1 (ja) 2006-01-17 2007-07-26 Nikon Corporation 基板保持装置及び露光装置、並びにデバイス製造方法
US7760324B2 (en) 2006-03-20 2010-07-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE112008003277T5 (de) 2007-12-06 2011-01-05 Shin-Etsu Handotai Co., Ltd. Suszeptor für das Dampfphasenwachstum und Dampfphasenwachstumsvorrichtung
NL1036835A1 (nl) 2008-05-08 2009-11-11 Asml Netherlands Bv Lithographic Apparatus and Method.
JP5251544B2 (ja) 2009-01-27 2013-07-31 日本電気株式会社 画像処理装置、画像処理方法および画像処理プログラム
US20120196242A1 (en) 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
US10242890B2 (en) 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
US20130087309A1 (en) 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control
CN105917459A (zh) 2014-02-07 2016-08-31 应用材料公司 用于dsa上弯曲晶片的夹持能力

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus

Similar Documents

Publication Publication Date Title
JP2007208279A5 (enExample)
JP2008160155A5 (enExample)
JP2014017526A5 (ja) リソグラフィ装置およびデバイス製造方法
CN104236407B (zh) 校正平台标尺的方法
JP2011211222A5 (enExample)
JP5850717B2 (ja) インプリント装置、及びそれを用いた物品の製造方法
EP1677157A3 (en) Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness
JP2003203842A5 (enExample)
JP2015111696A5 (enExample)
JP2012518900A5 (enExample)
JP2011155285A5 (ja) 交換方法、露光方法及びデバイス製造方法
JP2013021355A5 (enExample)
CN105073275A (zh) 在分配系统中用于高度传感器的自动位置定位器
JP2010536624A5 (enExample)
JP2008199034A5 (enExample)
KR20110085888A (ko) 임프린트 장치 및 물품의 제조 방법
CN109819673A (zh) 移动体装置、移动方法、曝光装置、曝光方法、平板显示器的制造方法、以及器件制造方法
CN101937169B (zh) 光掩模坯料的制造方法、光掩模的制造方法以及涂布装置
KR101390063B1 (ko) 레벨링 장치 및 이를 포함하는 원자현미경
JP6157093B2 (ja) 露光装置、露光方法及びデバイスの製造方法
JP5865475B2 (ja) 基板保持装置及びパターン転写装置並びにパターン転写方法
JP6333065B2 (ja) 塗布装置
JP2013175595A (ja) 基板保持装置及びパターン転写装置並びにパターン転写方法
JP4866715B2 (ja) ペースト塗布装置
JP2015079812A (ja) 基板保持装置および露光装置