EP3410440B1 - Single-poly-speicheranordnung mit einem geteilten, tief dotierten bereich und löschspannungen - Google Patents

Single-poly-speicheranordnung mit einem geteilten, tief dotierten bereich und löschspannungen Download PDF

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EP3410440B1
EP3410440B1 EP18185124.7A EP18185124A EP3410440B1 EP 3410440 B1 EP3410440 B1 EP 3410440B1 EP 18185124 A EP18185124 A EP 18185124A EP 3410440 B1 EP3410440 B1 EP 3410440B1
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Prior art keywords
voltage
erase
line
memory
memory cell
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English (en)
French (fr)
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EP3410440A1 (de
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Tsung-Mu Lai
Wen-Hao Ching
Chen-Hao Po
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eMemory Technology Inc
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eMemory Technology Inc
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    • G—PHYSICS
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    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
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    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
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    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
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    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
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    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
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    • G—PHYSICS
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    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
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    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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    • H01L29/0843—Source or drain regions of field-effect devices
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    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
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    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
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    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

Definitions

  • This invention relates to a memory array, and more particularly, a memory array with memory cells sharing one deep doped region.
  • An electrically rewritable nonvolatile memory is a type of memory that retains information it stores even when no power is supplied to memory blocks and allows on-board rewriting of a program. Due to the wide range of applications for various uses, there is a growing need for a nonvolatile memory to be embedded in the same chip with the main circuit, especially for personal electronic devices having strict requirements for circuit area.
  • a nonvolatile memory cell of prior art comprises one floating gate transistor for retaining data, and one or two select transistors for enabling the floating gate transistor to perform corresponding operations.
  • the floating gate may be controlled by coupling elements for program operations and erase operations. Since memory cells in different memory pages should be controlled independently, memory cells in different memory pages are usually disposed in isolated regions. However, due to the spacing rule of the manufacture, the spare area between different isolated regions can significantly increase the circuit area. Furthermore, since no elements are allowed to be disposed on the spare area, the increased circuit area is simply wasted. Therefore, how to reduce the circuit area and use the circuit area more efficiently has become an issue to be solved.
  • WO 2011/096978 discloses a 5-transistor non-volatile memory (NVM) cell that facilitates an increase in the voltage difference between the floating gate of a programmed NVM cell in an NVM cell array and the floating gate of a non-programmed NVM cell in the array.
  • NVM non-volatile memory
  • each memory cell may include a floating gate transistor for storing the data, two passing gate transistors for selecting the memory cell for corresponding operations, a control transistor, and an erase transistor. By applying different voltages to the control transistor and the erase transistor, the memory cell can be programmed or erased accordingly.
  • US 2014/177338 also discloses 5-element non-volatile memory cell having a floating gate transistor, two selection transistors, a control capacitor, and an erase capacitor.
  • the memory cell can be programmed or erased according to the voltages applied to the transistors and capacitors.
  • US 2013/234227 discloses an erasable programmable single-poly nonvolatile memory cell having a floating gate transistor, a selection transistor, an erase gate region, and a control gate region.
  • the program operations and erase operations are also performed by mainly applying corresponding voltages through the erase gate regions and the control gate regions.
  • the present invention aims at providing a memory array with small chip area without violating the spacing rule of the manufacturing process.
  • the claimed memory array includes a plurality of memory pages, each memory page includes a plurality of memory cells, and each memory cell includes a floating gate module, a control element, and an erase element.
  • the floating gate module includes a floating gate transistor.
  • the floating gate module can control the floating gate transistor according to a source line, a bit line and a word line.
  • the floating gate transistor has a first terminal, a second terminal and a floating gate.
  • the control element has a body terminal coupled to a control line, a first terminal coupled to the body terminal, a second terminal coupled to the body terminal, and a control terminal coupled to the floating gate.
  • the erase element has a body terminal for receiving a first voltage during a program operation and a program inhibit of the memory cell and receiving a second voltage during an erase operation of the memory cell, a first terminal coupled to an erase line, a second terminal coupled to the first terminal of the erase element or being floating, and a control terminal coupled to the floating gate.
  • the floating gate module is disposed in a first well, the erase element is disposed in a second well, and the control element is disposed in a third well.
  • the first well, the second well and the third well are disposed in a deep doped region.
  • Memory cells of the plurality of memory pages are all disposed in the deep doped region.
  • the control line is at the first voltage during the program operation, and the erase line is at the second voltage during the erase operation.
  • FIG. 1 shows a memory array 10 according to one embodiment of the present invention.
  • the memory array 10 includes M memory pages MP1 to MPM.
  • Each memory page MP1 to MPM includes N memory cells.
  • the memory page MP1 includes memory cells 100 1,1 to 100 1,N
  • the memory page MPM includes memory cells 100 M,1 to 100 M,N .
  • M and N are positive integers.
  • memory cells in the same memory page may be coupled to a same control line, a same erase line, and a same word line, but may be coupled to different source lines and different bit lines.
  • the memory cells 100 1,1 to 100 1,N in the same memory page MP1 are coupled to the same control line CL1, the same erase line EL1, and the same word line WL1.
  • the memory cell 100 1,1 is coupled to a source line SL1 and a bit line BL1 while the memory cell 100 1,N is coupled to a source line SLN and a bit line BLN.
  • memory cells in different memory pages but in the same column may be coupled to different control lines, different erase lines, and different word lines, but may be coupled to a same source line and a same bit line.
  • the memory cells 100 1,1 and 100 M,1 are disposed in the same column but in different memory pages MP1 and MPM.
  • the memory cells 100 1,1 and 100 M,1 are coupled to the same source line SL1 and the same bit line BL1.
  • the memory cell 100 1,1 is coupled to the control line CL1, the erase line EL1, and the word line WL1 while the memory cell 100 M,1 is coupled to the control line CLM, the erase line ELM, and the word line WLM.
  • each memory cell includes a floating gate module 110, a control element 120, and an erase element 130.
  • the floating gate module 110 includes a floating gate 112, a source transistor 114, and a bit transistor 116.
  • the floating gate module 110 can control the floating gate transistor 112 according to a source line, a bit line and a word line.
  • the floating gate transistor 112 has a first terminal, a second terminal and a floating gate.
  • the source transistor 114 has a first terminal, a second terminal, and a control terminal.
  • the first terminal of the source transistor 114 is coupled to a corresponding source line.
  • the first terminal of the source transistor 114 of the memory cell 100 1,1 may be coupled to the source line SL1
  • the first terminal of the source transistor 114 of the memory cell 100 1,N may be coupled to the source line SLN.
  • the second terminal of the source transistor 114 is coupled to the first terminal of the floating gate transistor 112, and the control terminal of the source transistor 114 is coupled to a corresponding word line WL1.
  • the control terminal of the source transistor 114 of the memory cell 100 1,1 may be coupled to the word line WL1, and the control terminal of the source transistor 114 of the memory cell 100 M,1 may be coupled to the word line WLM.
  • the bit transistor 116 has a first terminal, a second terminal, and a control terminal.
  • the first terminal of the bit transistor 116 is coupled to the second terminal of the floating gate transistor 112, the second terminal of the bit transistor 116 is coupled to a corresponding bit line, and the control terminal of the bit transistor 116 is coupled to a corresponding word line.
  • the second terminal of the bit transistor 116 of the memory cell 100 1,1 may be coupled to the bit line BL1
  • the second terminal of the bit transistor 116 of the memory cell 100 1,N may be coupled to the bit line BLN.
  • the control terminal of the bit transistor 116 of the memory cell 100 1,1 may be coupled to the word line WL1, and the control terminal of the bit transistor 116 of the memory cell 100 M,1 may be coupled to the word line WLM.
  • the control element 120 has a first terminal coupled to the body terminal, a second terminal coupled to the body terminal, a control terminal coupled to the floating gate of the floating gate transistor 112, and a body terminal coupled to a corresponding control line.
  • the body terminal of the control element 120 of the memory cell 100 1,1 may be coupled to the control line CL1
  • the body terminal of the control element 120 of the memory cell 100 M,1 may be coupled to the control line CLM.
  • the erase element 130 has a first terminal, a second terminal, a control terminal, and a body terminal.
  • the first terminal 134 of the erase element 130 is coupled to a corresponding erase line.
  • the first terminal of the erase element 130 of the memory cell 100 1,1 is coupled to the erase line EL1
  • the first terminal of the erase element 130 of the memory cell 100 M,1 is coupled to the erase line ELM.
  • the second terminal 136 of the erase element 130 is coupled to the first terminal of the erase element 130 or floating
  • the control terminal 138 of the erase element 130 is coupled to the floating gate of the floating gate transistor 112
  • the body terminal 132 of the erase element 130 is coupled to a well bias line WBL.
  • FIG. 2 shows a layout of the memory array 10 according to one embodiment of the present invention.
  • the floating gate module 110 of the memory cell 110 1,1 can be disposed in an active region AAF1 of a first P-well PW1
  • the erase element 130 of the memory cell 110 1,1 can be disposed in an active region AAE1 of a first N-well NW1
  • the control element 120 of the memory cell 110 1,1 can be disposed in an active region AAC1 of a second P-well PW2.
  • the first P-well PW1, the first N-well NW1 and the second P-well PW2 are disposed in the same deep doped region DR.
  • the deep doped region DR can be a deep N-well or an N-type buried layer.
  • FIG. 3 shows a section view of the erase elements 130 according to the layout in FIG. 2 .
  • the erase element 130 has a structure similar to a P-type metal-oxide-semiconductor transistor. That is, the body terminal 132 of the erase element 130 is at the N-well NW, and the first terminal 134 and the second terminal 136 are two P-type doped regions P+ disposed in the N-well NW.
  • the well bias line WBL is coupled to the body terminal 132 directly. However, in some embodiments, the well bias line WBL may also be coupled to the N-well NW through a contact or an N-type doped region in the N-well NW.
  • the floating gate of the floating gate transistor 112 is coupled to the control terminal 138 of the erase element 130 forming a gate structure. Since the erase line EL is coupled to the first terminal 134 of the erase element 130, the memory cells 110 1,1 to 110 1,N , ..., and 110 M,1 to 110 M,N can function correctly even with the their body terminals 132 of the erase elements 130 coupled to the same well bias line WBL. That is, the memory cells 110 1,1 to 110 1,N , ..., and 110 M,1 to 110 M,N can be disposed in the same deep doped region DR, which is coupled to the same well bias line WBL.
  • the floating gate module 110 of the memory cell 110 1,N can be disposed in an active region AAF2 of a third P-well PW3, the erase element 130 of the memory cell 110 1,N can be disposed in an active region AAE2 of a second N-well NW2, and the control element 120 of the memory cell 110 1,N can be disposed in the active region AAC1 of the second P-well PW2; however, the third P-well PW3 and the second N-well NW2 are still disposed in the same deep doped region DR.
  • the floating gate modules, the control elements, and the erase elements of the memory cells 110 M,1 to 110 M,N may be disposed in different wells as shown in FIG. 2
  • the different wells of the memory cells 110 M,1 to 110 M,N can still be disposed in the same deep doped region DR.
  • memory cells 110 1,1 to 110 1,N , ..., and 110 M,1 to 110 M,N of the M memory pages MP1 to MPM can all be disposed in the same deep doped region DR. Since different memory pages MP1 to MPM in the memory array 10 are disposed in one deep doped region DR, the spacing rules between deep doped regions will no longer be used to limit the circuit area of the memory array 10, and the circuit area of the memory array 10 can be reduced significantly.
  • the control elements 120 of the memory cells in the same memory page can be disposed in the same second P-well PW2.
  • the floating gate modules 110 of the memory cells 110 1,1 to 110 1,N can be disposed in two different P-wells PW1 and PW3, which are disposed in opposite sides of the second P-well PW2.
  • the erase elements 130 of the memory cells 110 1,1 to 110 1,N can be disposed in two different N-wells NW1 and NW2, which are disposed in opposite sides of the second P-well PW2. Therefore, the layout of the memory array 10 will not extend to one single direction, and the layout of the memory array 10 can be more flexible.
  • the floating gate modules 110 of the memory cells in the same memory page can also be disposed in one P-well and the erase elements 130 of the memory cells in the same memory page can be disposed in one N-well according to the system requirements.
  • FIG. 4 shows voltages of the signals during a program operation of the memory cell 100 1,1 in the memory array 10.
  • the first voltage VPP is substantially equal to the second voltage VEE.
  • the first voltage VPP is greater than the third voltage VEE', the third voltage VEE' is greater than the fourth voltage VINH1, and the fourth voltage VINH1 is greater than the fifth voltage VSS.
  • the first voltage VPP is greater than the sixth voltage VPP', and the sixth voltage VPP' is greater than the fifth voltage VSS.
  • the difference between the third voltage VEE' and the fifth voltage VSS is greater than half of the difference between the first voltage VPP and the fifth voltage VSS.
  • the difference between the fourth voltage VINH1 and the fifth voltage VSS is smaller than half of the difference between the first voltage VPP and the fifth voltage VSS, and the difference between the sixth voltage VPP' and the fifth voltage VSS is smaller than half of the difference between the first voltage VPP and the fifth voltage VSS.
  • the first voltage VPP is 18V
  • the second voltage VEE is in a range between 17V and 18V
  • the fifth voltage VSS is 0V
  • the third voltage VEE' may be 13V
  • the fourth voltage VINH1 may be 6V
  • the sixth voltage VPP' may also be 6V.
  • the control line CL1 is at the first voltage VPP
  • the erase line EL1 is at the third voltage VEE'
  • the word line WL1 is at the fourth voltage VINH1
  • the source line SL is at the fifth voltage VSS
  • the bit line BL is at the fifth voltage VSS.
  • control element 120 of the memory cell 100 1,1 is coupled to a high voltage by the control line CL1.
  • the source transistor 114 and the bit transistor 116 are turned on so the first terminal and the second terminal of the floating gate transistor 112 of the memory cell 100 1,1 are pulled down to a low voltage. Therefore, the high voltage difference applied to the floating gate transistor 112 will induce FN (Fowler Nordheim) electron tunneling injection to the floating gate, and the memory cell 100 1,1 can be programmed.
  • the voltage of the well bias line WBL should not be smaller than the greatest voltage of all the signals. In this case, the well bias line WBL would be at the first voltage VPP.
  • the memory cell 100 1,N may perform a program inhibit operation during the program operation of the memory cell 100 1,1 .
  • the control line CL1 is at the first voltage VPP
  • the erase line EL1 is at the third voltage VEE'
  • the word line WL1 is at the fourth voltage VINH1
  • the source line SLN is at a fourth voltage VINH1
  • the bit line BLN is at the fourth voltage VINH1.
  • the memory cell 100 1,N is coupled to the same control line CL1, the erase line EL1, and the word line WL1 as the memory cell 100 1,1 , the memory cell 100 1,N will not be programmed due to the effect of channel boost caused by the source transistor 114 and the bit transistor 116 of the memory cell 100 1,N . That is, the voltages of the first terminal and the second terminal of the floating gate transistor 112 are boosted to a voltage level higher than the fourth voltage VINH1, so the floating gate of the memory cell 100 1,N is not able to capture enough electrons and the memory cell 100 1,N will not be programmed. Also, since the control line CL1 is at the first voltage VPP, the well bias line WBL is still at the first voltage VPP during the program inhibit operation of the memory cell 100 1,N .
  • a control line CLM coupled to an unselected memory cell 100 M,1 in an unselected memory page MPM is at the sixth voltage VPP'
  • an erase line ELM coupled to the unselected memory cell 100 M,1 is at the third voltage VEE'
  • a word line WLM coupled to the unselected memory cell 100 M,1 is at the fourth voltage VINH1.
  • the erase line ELM can be at the third voltage VEE' during the program operation of the memory cell 100 1,1 , and the difference between the third voltage VEE' and the fifth voltage VSS can be slightly greater than half of the difference between the first voltage VPP and the fifth voltage VSS. In this case, the erase element 130 will not breakdown and the memory cell 100 M,1 will not be programmed unexpectedly.
  • the voltage of the control line CLM should not be too low; otherwise, the memory cell 100 M,1 may be unstable. Therefore, the control line CLM is at the sixth voltage VPP' during the program operation of the memory cell 100 1,1 , and the difference between the sixth voltage VPP' and the fifth voltage VSS can be slightly smaller than half of the difference between the first voltage VPP and the fifth voltage VSS. In this case, the erase element 130 can remain stable.
  • the word line may be at the fourth voltage VINH1 for reducing the gate-induced drain leakage (GIDL) current.
  • GIDL gate-induced drain leakage
  • the source line SLN and the bit line BLN coupled to the memory cell 100 M,N are at the fourth voltage VINH1.
  • the big voltage difference may cause GIDL currents at the source transistor 114 and the bit transistor 116 of the memory cell 100 M,N .
  • the word line WLM at the fourth voltage VINH1 can avoid the GIDL currents efficiently while not affecting the operations of other memory cells.
  • FIG. 5 shows voltages of the signals during an erase operation of the memory cell 100 1,1 in the memory array 10.
  • the erase line EL1 is at the second voltage VEE
  • the word line WL1 is at the fourth voltage VINH1 or the fifth voltage VSS
  • the source line SL1 is at the fourth voltage VINH1
  • the bit line BL1 is at the fourth voltage VINH1
  • the control line CL1 is at the fifth voltage VSS.
  • the high voltage of the erase line EL1 can cause FN electron tunneling ejection so the memory cell 100 1,1 can be erased.
  • the erase line EL1 since the erase line EL1 has the greatest voltage, that is, the second voltage VEE, among all the signals during the erase operation of the memory cell 100 1,1 , the well bias line WBL would be at the second voltage VEE.
  • the memory array 10 can be erased by page. That is, memory cells at the same memory page, such as the memory cells 100 1,1 to 100 1,N in the memory page MP1, will be erased at the same time.
  • the source lines SL1 to SLN and the bit lines BL1 to BLN coupled to the memory cells 100 1,1 to 100 1,N may all be at a same rather low voltage.
  • the source lines SL1 to SLN and the bit lines BL1 to BLN may all be at the fourth voltage VINH1 or at the fifth voltage VSS.
  • the difference between the fourth voltage VINH1 and the fifth voltage VSS can be smaller than half of the difference between the second voltage VEE and the fifth voltage VSS.
  • the erase line ELM can be at the third voltage VEE'.
  • the difference between the third voltage VEE' and the fifth voltage VSS can be slightly greater than half of the difference between the second voltage VEE and the fifth voltage VSS.
  • the voltage of the erase line ELM is not high enough to erase the memory cell 100 M,1 and is not low enough to make the erase element 130 breakdown.
  • the control line CLM is at the sixth voltage VPP' so that the memory cell 100 M,1 will not be programmed or erased unexpectedly by the erase line ELM.
  • the difference between the sixth voltage VPP' and the fifth voltage VSS is smaller than half of the difference between the second voltage VEE and the fifth voltage VSS.
  • the word line WLM, the source line SL1, and the bit line BL1 can be at approximate voltages so that the memory cell 100 M,1 will not be programmed or erased unexpectedly by the erase line ELM while the GIDL current can be prevented.
  • the word line WLM, the source line SL1, and the bit line BL1 can be at the fourth voltage VINH1.
  • the memory array can be erased by sector. That is, memory cells in the memory array can all be erased at the same time.
  • FIG. 6 shows a memory array 20 according to one embodiment of the present invention.
  • the memory arrays 10 and 20 have similar structures. The difference between these two is in that the memory cells 200 1,1 to 200 1,N , ..., and 200 M,1 to 200 M,N are all coupled to the same erase line EL0, so the memory cells 200 1,1 to 200 1,N , ..., and 200 M,1 to 200 M,N in the memory array 20 will all be erased at the same time.
  • FIG. 7 shows voltages of the signals during an erase operation of the memory cell 200 1,1 in the memory array 20.
  • the erase line EL0 is at the second voltage VEE
  • the control line CL1 is at the fifth voltage VSS
  • the source line SL1 and the bit line BL1 are both at the fourth voltage VINH1 or at the fifth voltage VSS
  • the word line is at the fourth voltage VINH1 or at the fifth voltage VSS.
  • the high voltage of the erase line EL0 can cause FN electron tunneling ejection so the memory cell 200 1,1 can be erased. Since the memory cells 200 1,1 to 200 1,N , ..., and 200 M,1 to 200 M,N in the memory array 20 are erased at the same time, voltages of the signals received by all the memory cells 200 1,1 to 200 1,N , ..., and 200 M,1 to 200 M,N can be the same.
  • the memory array 20 can be operated with the same principle as the memory array 10 during the program operation and the program inhibit operation as shown in FIG. 4 .
  • the memory cells 200 1,1 to 200 1,N , ..., and 200 M,1 to 200 M,N of the memory array 20 can all be disposed in the same deep doped region. Since different memory pages MP1 to MPM in the memory array 20 are disposed in one deep doped region, the spacing rules between deep doped regions will no longer be used to limit the circuit area of the memory array 20, and the circuit area of the memory array 20 can be reduced significantly. In addition, since all the memory cells 200 1,1 to 200 1,N , ..., and 200 M,1 to 200 M,N of the memory array 20 are coupled to the same erase line, the driving circuit for providing the erase line can be simplified, which can further reduce the chip area required by the memory array 20.
  • FIG. 8 shows a memory array 30 according to an example not covered by the claims.
  • the memory array 30 has the similar structure as the memory array 10. The difference between these two is in that each of the memory cells 300 1,1 to 300 1,N , ..., and 300 M,1 to 300 M,N has a floating gate module 310, a control element 120 and an erase element 130.
  • the floating gate module 310 includes a floating gate 312 and a source transistor 314.
  • the floating gate transistor 312 has a first terminal, a second terminal, and a floating gate.
  • the second terminal of the floating gate transistor 312 is coupled to a corresponding bit line.
  • the second terminal of the floating gate transistor 312 of the memory cell 300 1,1 is coupled to the bit line BL1
  • the second terminal of the floating gate transistor 312 of the memory cell 300 1,N is coupled to the bit line BLN.
  • the floating gate of the floating gate transistor 312 is coupled to the control element 120 and the erase element 130.
  • the source transistor 314 has a first terminal, a second terminal, and a control terminal.
  • the first terminal of the source transistor 314 is coupled to a corresponding source line.
  • the first terminal of the source transistor 314 of the memory cell 300 1,1 can be coupled to the source line SL1
  • the first terminal of the source transistor 314 of the memory cell 300 1,N can be coupled to the source line SLN.
  • the second terminal of the source transistor 314 is coupled to the first terminal of the floating gate transistor 112, and the control terminal of the source transistor 314 is coupled to a corresponding word line.
  • the control terminal of the source transistor 314 of the memory cell 300 1,1 can be coupled to the word line WL1
  • the control terminal of the source transistor 314 of the memory cell 300 M,1 can be coupled to the word line WLM.
  • FIG. 9 shows voltages of the signals during a program operation of the memory cell 300 1,1 in the memory array 30.
  • the control line CL1 is at the first voltage VPP
  • the erase line EL1 is at the third voltage VEE'
  • the word line WL1 is at the fourth voltage VINH1
  • the source line SL1 is at the fifth voltage VSS
  • the bit line BL1 is at the fifth voltage VSS.
  • control element 120 of the memory cell 300 1,1 is coupled to a high voltage by the control line CL1.
  • the source transistor 314 is turned on so the first terminal and the second terminal of the floating gate transistor 312 of the memory cell 300 1,1 are pulled down to a low voltage. Therefore, the high voltage difference applied to the floating gate transistor 312 will induce FN (Fowler Nordheim) electron tunneling injection to the floating gate, and the memory cell 300 1,1 can be programmed.
  • the voltage of the well bias line WBL should not be smaller than the greatest voltage of all the signals. In this case, the well bias line WBL would be the first voltage VPP.
  • the memory cell 300 1,N may perform a program inhibit operation during the program operation of the memory cell 300 1,1 .
  • the control line CL1 is at the first voltage VPP
  • the erase line EL1 is at the third voltage VEE'
  • the word line WL1 is at the fourth voltage VINH1
  • the source line SLN is at a seventh voltage VINH2
  • the bit line BLN is at the seventh voltage VINH2.
  • the bit line BLN Since the second terminal of the floating gate transistor 312 is coupled to the corresponding bit line, the bit line BLN may have to be at a rather high voltage to prevent the memory cell 300 1,N from being programmed. In this case, the bit line BLN can be at the seventh voltage VINH2.
  • the difference between the seventh voltage VINH2 and the fifth voltage VSS must be smaller than the source/drain junction breakdown voltage of the floating gate transistor 312. For example, if the source/drain junction breakdown voltage of the floating gate transistor 312 is 9V, the seventh voltage VINH2 may be 8V.
  • the memory cell 300 1,N is coupled to the same control line CL1, the erase line EL1, and the word line WL1 as the memory cell 300 1,1 , the memory cell 300 1,N will not be programmed due to the rather high voltages at the first terminal and the second terminal of the floating gate transistor 312 of the memory cell 300 1,N . Also, since the control line CL1 is at the first voltage VPP, the well bias line WBL is still at the first voltage VPP during the program inhibit operation of the memory cell 300 1,N .
  • a control line CLM coupled to an unselected memory cell 300 M,1 in an unselected memory page MPM is at a sixth voltage VPP'
  • an erase line ELM coupled to the unselected memory cell 300 M,1 is at the third voltage VEE'
  • a word line WLM coupled to the unselected memory cell 300 M,1 is at the fourth voltage VINH1.
  • the difference between the sixth voltage VPP' and the fifth voltage VSS is smaller than half of the difference between the first voltage VPP and the fifth voltage VSS.
  • the erase line ELM is at the third voltage VEE' during the program operation of the memory cell 300 1,1 , the erase element 130 will not breakdown and the memory cell 300 M,1 will not be programmed unexpectedly. Also, the control line CLM is at the sixth voltage VPP' to ensure that the memory cell 300 M,1 is not programmed.
  • the word line may be at the fourth voltage VINH1 for reducing the gate-induced drain leakage (GIDL) current.
  • GIDL gate-induced drain leakage
  • the source line SLN and the bit line BLN coupled to the memory cell 300 M,N are at the seventh voltage VINH2.
  • the word line WLM is at the fifth voltage VSS, the big reverse voltage difference may cause GIDL currents at the source transistor 314 of the memory cell 300 M,N .
  • the word line WLM at the fourth voltage VINH1 can avoid the GIDL currents efficiently while not affecting the operations of other memory cells.
  • FIG. 10 shows voltages of the signals during an erase operation of the memory cell 300 1,1 in the memory array 30.
  • the erase line EL1 is at the second voltage VEE
  • the control line CL1 is at a fifth voltage VSS
  • the source line and the bit line are both at the fourth voltage VINH1 or at the fifth voltage VSS
  • the word line is at the fourth voltage VINH1 or at the fifth voltage VSS.
  • the high voltage of the erase line EL1 can cause FN electron tunneling ejection so the memory cell 300 1,1 can be erased.
  • the erase line EL1 since the erase line EL1 has the greatest voltage, that is, the second voltage VEE, among all the signals during the erase operation of the memory cell 300 1,1 , the well bias line WBL would be at the second voltage VEE.
  • the erase line ELM should not be too high.
  • the well bias line WBL is at the second voltage VEE, the voltage of the erase line ELM cannot be too low; otherwise, the erase element 130 of the memory cell memory cell 300 M,1 may breakdown. Therefore, in FIG. 10 , the erase line ELM can be at the third voltage VEE'.
  • the voltage of the erase line ELM is not high enough to erase the memory cell 300 M,1 and is not low enough to make the erase element 130 breakdown.
  • the control line CLM can be at a sixth voltage VPP'.
  • the difference between the sixth voltage VPP' and the fifth voltage VSS is smaller than half of the difference between the second voltage VEE and the fifth voltage VSS.
  • the word line WLM, the source line SL1, and the bit line BL1 can be at approximate voltages so that the memory cell 300 M,1 will not be programmed or erased unexpectedly by the erase line ELM while the GIDL current can be prevented.
  • the word line WLM, the source line SL1, and the bit line BL1 can be at the fourth voltage VINH1. Since the erase line EL1 coupled to the memory cell 300 1,1 is at an even higher voltage, the second voltage VEE, and the control line CL1 coupled to the memory cell 300 1,1 is at a low voltage, the fifth voltage VSS, the memory cell 300 1,1 can still be erased normally even with the source line SL1 and the bit line BL1 being at the fourth voltage VINH1.
  • the memory array 30 can be erased by page. That is, memory cells at the same memory page, such as the memory cells 300 1,1 to 300 1,N in the memory page MP1, will be erased at the same time.
  • the source lines SL1 to SLN and the bit lines BL1 to BLN coupled to the memory cells 300 1,1 to 300 1,N may all be at the fourth voltage VINH1 during the erase operation.
  • the memory array can be erased by sector. That is, memory cells in the memory array can all be erased at the same time.
  • FIG. 11 shows a memory array 400 according to another example not covered by the claims.
  • the memory arrays 400 and 300 have similar structures. The difference between these two is in that the memory cells 400 1,1 to 400 1,N , ..., and 400 M,1 to 400 M,N are all coupled to the same erase line EL0 so the memory cells 400 1,1 to 400 1,N , ..., and 400 M,1 to 400 M,N in the memory array 40 will all be erased at the same time.
  • FIG. 12 shows voltages of the signals during an erase operation of the memory cell 400 1,1 in the memory array 40.
  • the erase line EL0 is at the second voltage VEE
  • the control line CL1 is at the fifth voltage VSS
  • the source line SL1 and the bit line BL1 are both at the fourth voltage VINH1 or at the fifth voltage VSS
  • the word line is at the fourth voltage VINH1 or at the fifth voltage VSS.
  • the high voltage of the erase line EL0 can cause FN electron tunneling ejection so the memory cell 400 1,1 can be erased.
  • the memory array 40 can be operated with the same principle as the memory array 30 during the program operation and the program inhibit operation as shown in FIG. 9 .
  • the memory cells 400 1,1 to 400 1,N , ..., and 400 M,1 to 400 M,N of the memory array 40 can all be disposed in the same deep doped region. Since different memory pages MP1 to MPM in the memory array 40 are disposed in one deep doped region, the spacing rules between deep doped regions will no longer be used to limit the circuit area of the memory array 40, and the circuit area of the memory array 20 can be reduced significantly.
  • the memory cells of different memory pages in a memory array can all be disposed in the same deep doped region. Since different memory pages in the memory array are disposed in one deep doped region, the spacing rules between deep doped regions will no longer be used to limit the circuit area of the memory array, and the circuit area of the memory array can be reduced significantly.

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Claims (7)

  1. Speicher, welcher umfasst:
    eine Speicheranordnung (10, 20), die mehrere Speicherseiten (MP1 bis MPM) umfasst, worin jede Speicherseite (MP1 bis MPM) mehrere Speicherzellen (1001,1 bis 100M,N, 2001,1 bis 200M,N) umfasst, worin jede Speicherzelle (1001,1 bis 100M,N, 2001,1 bis 200M,N) umfasst:
    ein Floating-Gate-Modul (110), das umfasst:
    einen Floating-Gate-Transistor (112) mit einem ersten Anschluss, einem zweiten Anschluss und einem Floating-Gate;
    einen Quellentransistor (114) mit einem ersten Anschluss, der mit einer Quellenleitung (SL1 bis SLN) gekoppelt ist, einem zweiten Anschluss, der mit dem ersten Anschluss des Floating-Gate-Transistors (112) gekoppelt ist, und einem Steueranschluss, der mit einer Wortleitung (WL1 bis WLM) gekoppelt ist; und
    einen Bittransistor (116) mit einem ersten Anschluss, der mit dem zweiten Anschluss des Floating-Gate-Transistors (112) gekoppelt ist, einem zweiten Anschluss, der mit einer Bitleitung (BL1 bis BLN) gekoppelt ist, und einem Steueranschluss;
    einen Steuertransistor (120) mit einem Körperanschluss, der mit einer Steuerleitung (CL1 bis CLM) gekoppelt ist, einem ersten Anschluss, der mit dem Körperanschluss gekoppelt ist, einem zweiten Anschluss, der mit dem Körperanschluss gekoppelt ist, und einem Steueranschluss, der mit dem Floating-Gate gekoppelt ist; und
    einen Löschtransistor (130) mit einem Körperanschluss (132), einem ersten Anschluss (134), der mit einer Löschleitung (EL1 bis ELM) gekoppelt ist, einem zweiten Anschluss (136), der mit dem ersten Anschluss (134) des Löschtransistors (130) gekoppelt ist oder erdfrei ist, und einem Steueranschluss (138), der mit dem Floating-Gate gekoppelt ist; worin
    ein Lösch- und Programmier-Schaltkreis für eine Speicherzelle ausgestaltet ist, Spannungen an den entsprechenden Körperanschluss des entsprechenden Löschtransistors (130) der Speicherzelle (1001,1, 2001,1), an die entsprechende Steuerleitung (CL1), an die entsprechende Löschleitung (EL1, EL0), an die entsprechende Wortleitung (WL1), an die entsprechende Quellenleitung (SL1), und an die entsprechende Bitleitung (BL1) anzulegen;
    worin:
    das Floating-Gate-Modul (110) in einer ersten Wanne (PW1) angeordnet ist;
    der Löschtransistor (130) in einer zweiten Wanne (NW1, NW2) angeordnet ist;
    der Steuertransistor (120) in einer dritten Wanne (PW2, PW3) angeordnet ist;
    die erste Wanne (PW1), die zweite Wanne (NW1, NW2) und die dritte Wanne (PW2, PW3) in einem tief dotierten Bereich (DR) angeordnet sind;
    Speicherzellen (1001,1 bis 100M,N, 2001,1 bis 200M,N) der mehreren Speicherseiten (MP1 bis MPM) alle in dem tief dotierten Bereich (DR) angeordnet sind;
    der Lösch- und Programmier-Schaltkreis für eine Speicherzelle ausgestaltet ist, an den entsprechenden Körperanschluss des entsprechenden Löschtransistors (130) der Speicherzelle (1001,1, 2001,1) anzulegen:
    eine erste Spannung (VPP), während eines Programmiervorgangs und einer Programmierunterbrechung der Speicherzelle (1001,1, 2001,1); und
    eine zweite Spannung (VEE), während eines Löschvorgangs der Speicherzelle (1001,1, 2001,1);
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, während des Programmiervorgangs der Speicherzelle die erste Spannung (VPP) an die entsprechende Steuerleitung (CL1) der Speicherzelle (1001,1, 2001,1) anzulegen;
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, während des Löschvorgangs der Speicherzelle die zweite Spannung (VEE) an die entsprechende Löschleitung (EL1, EL0) der Speicherzelle (1001,1, 2001,1) anzulegen;
    Speicherzellen (1001,1 bis 1001,N) in verschiedenen Speicherseiten (MP1 bis MPM) mit verschiedenen Steuerleitungen (CL1 bis CLM), verschiedenen Wortleitungen (WL1 bis WLM), und verschiedenen Löschleitungen (EL1 bis ELM) gekoppelt sind;
    der Lösch- und Programmier-Schaltkreis während des Löschvorgangs der Speicherzelle (1001,1) weiter ausgestaltet ist, anzulegen:
    die zweite Spannung (VEE) an die entsprechende Löschleitung (EL1);
    eine fünfte Spannung (VSS) an die entsprechende Steuerleitung (CL1); und
    eine vierte Spannung (VINH1) oder die fünfte Spannung (VSS) an die entsprechende Quellenleitung (SL1) und die entsprechende Bitleitung (BL1) während die vierte Spannung (VINH1) oder die fünfte Spannung (VSS) an die entsprechende Wortleitung (WL1) entsprechend angelegt wird;
    die zweite Spannung (VEE) größer ist als die vierte Spannung (VINH1), und die vierte Spannung (VINH1) größer ist als die fünfte Spannung (VSS); und
    eine Differenz zwischen der vierten Spannung (VINH1) und der fünften Spannung (VSS) kleiner ist als eine halbe Differenz zwischen der zweiten Spannung (VEE) und der fünften Spannung (VSS);
    dadurch gekennzeichnet, dass während des Löschvorgangs der Speicherzelle (1001,1):
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, eine dritte Spannung (VEE') an eine Löschleitung (ELM) anzulegen, die mit einer nicht ausgewählten Speicherzelle (100M,1) in einer nicht ausgewählten Seite (MPM) gekoppelt ist;
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, eine sechste Spannung (VPP') an eine Steuerleitung (CLM) anzulegen, die mit der nicht ausgewählten Speicherzelle (100M,1) gekoppelt ist;
    die zweite Spannung (VEE) größer ist als die dritte Spannung (VEE'), die dritte Spannung größer ist als die sechste Spannung (VPP'), und die sechste Spannung (VPP') größer ist als die fünfte Spannung (VSS);
    eine Differenz zwischen der dritten Spannung (VEE') und der fünften Spannung (VSS) größer ist als die halbe Differenz zwischen der zweiten Spannung (VEE) und der fünften Spannung (VSS); und
    eine Differenz zwischen der sechsten Spannung (VPP') und der fünften Spannung (VSS) kleiner ist als die halbe Differenz zwischen der zweiten Spannung (VEE) und der fünften Spannung (VSS); und
    der Steueranschluss des entsprechenden Bittransistors und der Steueranschluss des entsprechenden Quellentransistors für jede Speicherzelle mit der entsprechenden Wortleitung gekoppelt sind.
  2. Speicher nach Anspruch 1, dadurch gekennzeichnet, dass:
    Speicherzellen (1001,1 bis 1001,N, 2001,1 bis 2001,N) in einer gleichen Speicherseite (MP1) mit einer gleichen Steuerleitung (CL1), einer gleichen Löschleitung (EL1, EL0), und einer gleichen Wortleitung (WL1) gekoppelt sind; und
    worin die Speicherzellen (1001,1 bis 1001,N, 2001,1 bis 2001,N) in der gleichen Speicherseite (MP1) mit verschiedenen Quellenleitungen (SL1 bis SLN) und verschiedenen Bitleitungen (BL1 bis BLN) gekoppelt sind.
  3. Speicher nach Anspruch 1, dadurch gekennzeichnet, dass während des Programmiervorgang der Speicherzelle (1001,1, 2001,1):
    der Lösch- und Programmier-Schaltkreis ausgestaltet ist, die erste Spannung (VPP) an die entsprechende Steuerleitung (CL1) anzulegen;
    der Lösch- und Programmier-Schaltkreis ausgestaltet ist, die dritte Spannung (VEE') an die entsprechende Löschleitung (EL1, EL0) anzulegen;
    der Lösch- und Programmier-Schaltkreis ausgestaltet ist, die vierte Spannung (VINH1) an die entsprechende Wortleitung (WL1) anzulegen;
    der Lösch- und Programmier-Schaltkreis ausgestaltet ist, die fünfte Spannung (VSS) an die entsprechende Quellenleitung (SL1) anzulegen;
    der Lösch- und Programmier-Schaltkreis ausgestaltet ist, die fünfte Spannung (VSS) an die entsprechende Bitleitung (BL1) anzulegen;
    die erste Spannung (VPP) größer ist als die dritte Spannung (VEE'), die dritte Spannung (VEE') größer ist als die vierte Spannung (VINH1), und die vierte Spannung (VINH1) größer ist als die fünfte Spannung (VSS);
    eine Differenz zwischen der dritten Spannung (VEE') und der fünften Spannung (VSS) größer ist als eine halbe Differenz zwischen der ersten Spannung (VPP) und der fünften Spannung (VSS); und
    eine Differenz zwischen der vierten Spannung (VINH1) und der fünften Spannung (VSS) kleiner ist als die halbe Differenz zwischen der ersten Spannung (VPP) und der fünften Spannung (VSS).
  4. Speicher nach Anspruch 3, dadurch gekennzeichnet, dass während des Programmiervorgangs der Speicherzelle (1001,1, 2001,1):
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, die sechste Spannung (VPP') an eine Steuerleitung (CLM) anzulegen die mit einer nicht ausgewählten Speicherzelle (100M,1, 200M,1) in einer nicht ausgewählten Speicherseite (MPM) gekoppelt ist;
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, die dritte Spannung (VEE') an eine Löschleitung (ELM, EL0) anzulegen, die mit der nicht ausgewählten Speicherzelle (100M,1, 200M,1) gekoppelt ist; und
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, die vierte Spannung (VINH1) an einer Wortleitung (WLM) anzulegen, die mit der nicht ausgewählten Speicherzelle (100M,1, 200M,1) gekoppelt ist;
    worin die dritte Spannung (VEE') größer ist als die sechste Spannung (VPP'), und die sechste Spannung (VPP') größer ist als die fünfte Spannung (VSS); worin
    eine Differenz zwischen der sechsten Spannung (VPP') und der fünften Spannung (VSS) kleiner ist als die halbe Differenz zwischen der ersten Spannung (VPP) und der fünften Spannung (VSS).
  5. Speicher nach Anspruch 3, dadurch gekennzeichnet, dass während des Programmierunterbrechungsvorgangs der Speicherzelle (1001,N, 2001,N):
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, die erste Spannung (VPP) an die entsprechende Steuerleitung (CL1) anzulegen;
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, die dritte Spannung (VEE') an die entsprechende Löschleitung (EL1) anzulegen;
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, die vierte Spannung (VINH1) an die entsprechende Wortleitung (WL1) anzulegen;
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, die vierte Spannung (VINH1) an die entsprechende Quellenleitung (SLN) anzulegen; und
    der Lösch- und Programmier-Schaltkreis weiter ausgestaltet ist, die vierte Spannung (VINH1) an die entsprechende Bitleitung (BLN) anzulegen.
  6. Speicher nach Anspruch 1, dadurch gekennzeichnet, dass:
    der tief dotierte Bereich (DR) eine tiefe N-Wanne oder eine vergrabene N-Typ-Schicht ist;
    die erste Wanne (PW1) und die dritte Wanne (PW2, PW3) P-Wannen sind, die in dem tief dotierten Bereich (DR) angeordnet sind; und
    die zweite Wanne (NW1, NW2) eine N-Wanne ist, die in dem tief dotierten Bereich (DR) angeordnet ist.
  7. Speicher nach Anspruch 1, dadurch gekennzeichnet, dass:
    Steuerelemente (120) der Speicherzellen (1001,1 bis 100M,N, 2001,1 bis 200M,N) in der gleichen Speicherseite (MP1 bis MPM) in der gleichen dritten Wanne (PW2, PW3) angeordnet sind.
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US10121550B2 (en) 2018-11-06

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