TWI373127B - Nonvolatile single-poly memory device - Google Patents

Nonvolatile single-poly memory device

Info

Publication number
TWI373127B
TWI373127B TW096103847A TW96103847A TWI373127B TW I373127 B TWI373127 B TW I373127B TW 096103847 A TW096103847 A TW 096103847A TW 96103847 A TW96103847 A TW 96103847A TW I373127 B TWI373127 B TW I373127B
Authority
TW
Taiwan
Prior art keywords
memory device
poly memory
nonvolatile single
nonvolatile
poly
Prior art date
Application number
TW096103847A
Other languages
Chinese (zh)
Other versions
TW200802820A (en
Inventor
Hsin Ming Chen
Shih Chen Wang
Ming Chou Ho
Shih Jye Shen
Original Assignee
Ememory Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ememory Technology Inc filed Critical Ememory Technology Inc
Publication of TW200802820A publication Critical patent/TW200802820A/en
Application granted granted Critical
Publication of TWI373127B publication Critical patent/TWI373127B/en

Links

TW096103847A 2006-06-26 2007-02-02 Nonvolatile single-poly memory device TWI373127B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80575106P 2006-06-26 2006-06-26

Publications (2)

Publication Number Publication Date
TW200802820A TW200802820A (en) 2008-01-01
TWI373127B true TWI373127B (en) 2012-09-21

Family

ID=44765486

Family Applications (2)

Application Number Title Priority Date Filing Date
TW096103847A TWI373127B (en) 2006-06-26 2007-02-02 Nonvolatile single-poly memory device
TW096109976A TWI347671B (en) 2006-06-26 2007-03-22 Silicon-on-insulator (soi) memory device

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW096109976A TWI347671B (en) 2006-06-26 2007-03-22 Silicon-on-insulator (soi) memory device

Country Status (1)

Country Link
TW (2) TWI373127B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation

Also Published As

Publication number Publication date
TW200802820A (en) 2008-01-01
TWI347671B (en) 2011-08-21
TW200802807A (en) 2008-01-01

Similar Documents

Publication Publication Date Title
EP2186095A4 (en) Nonvolatile semiconductor memory device
EP2232498A4 (en) Nonvolatile semiconductor memory device
HK1203102A1 (en) Flash memory program inhibit scheme
EP2223302A4 (en) Dual function compatible non-volatile memory device
EP1999591A4 (en) Multi-bit-per-cell flash memory device with non-bijective mapping
TWI371106B (en) Printed non-volatile memory
EP3540736C0 (en) Multi-die memory device
EP2308084A4 (en) Nonvolatile semiconductor memory device
EP2235721A4 (en) Nonvolatile semiconductor memory device
TWI340486B (en) Semiconductor memory device
EP2003569A4 (en) Flash memory controller
TWI349942B (en) Multi-port memory device
TWI319877B (en) Semiconductor memory device
TWI368316B (en) Multi-trapping layer flash memory cell
SG126788A1 (en) Interface for non-volatile memories
EP1714294A4 (en) Nonvolatile memory
TWI366893B (en) Non-volatile memory device and method for manufacturing the same
GB0607854D0 (en) Multi-bit virtual-ground nand memory device
EP2170617A4 (en) Non-volatile memory data integrity validation
EP2225648A4 (en) Semiconductor memory device
GB0618045D0 (en) Non-volatile memory bitcell
GB2433815B (en) Non-volatile memory device
IL187036A0 (en) Re-flash protection for flash memory
EP1821214A4 (en) Nonvolatile memory system
TWI358731B (en) Semiconductor memory device