FR3021806B1 - Procede de programmation d'une cellule memoire non volatile comprenant une grille de transistor de selection partagee - Google Patents
Procede de programmation d'une cellule memoire non volatile comprenant une grille de transistor de selection partageeInfo
- Publication number
- FR3021806B1 FR3021806B1 FR1454839A FR1454839A FR3021806B1 FR 3021806 B1 FR3021806 B1 FR 3021806B1 FR 1454839 A FR1454839 A FR 1454839A FR 1454839 A FR1454839 A FR 1454839A FR 3021806 B1 FR3021806 B1 FR 3021806B1
- Authority
- FR
- France
- Prior art keywords
- memory cell
- nonvolatile memory
- selection transistor
- transistor grid
- programming nonvolatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
- G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1454839A FR3021806B1 (fr) | 2014-05-28 | 2014-05-28 | Procede de programmation d'une cellule memoire non volatile comprenant une grille de transistor de selection partagee |
CN201520312733.9U CN204904840U (zh) | 2014-05-28 | 2015-05-14 | 一种包括共用选择晶体管栅极的非易失性存储器单元 |
CN201510247063.1A CN105280225B (zh) | 2014-05-28 | 2015-05-14 | 对包括共用选择晶体管栅极的非易失性存储器单元进行编程的方法 |
US14/719,913 US9443598B2 (en) | 2014-05-28 | 2015-05-22 | Method for programming a non-volatile memory cell comprising a shared select transistor gate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1454839A FR3021806B1 (fr) | 2014-05-28 | 2014-05-28 | Procede de programmation d'une cellule memoire non volatile comprenant une grille de transistor de selection partagee |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3021806A1 FR3021806A1 (fr) | 2015-12-04 |
FR3021806B1 true FR3021806B1 (fr) | 2017-09-01 |
Family
ID=51905215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1454839A Expired - Fee Related FR3021806B1 (fr) | 2014-05-28 | 2014-05-28 | Procede de programmation d'une cellule memoire non volatile comprenant une grille de transistor de selection partagee |
Country Status (3)
Country | Link |
---|---|
US (1) | US9443598B2 (fr) |
CN (2) | CN105280225B (fr) |
FR (1) | FR3021806B1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9640267B2 (en) * | 2014-03-31 | 2017-05-02 | Renesas Elctronics Corporation | Semiconductor device, pre-write program, and restoration program |
FR3021806B1 (fr) * | 2014-05-28 | 2017-09-01 | St Microelectronics Sa | Procede de programmation d'une cellule memoire non volatile comprenant une grille de transistor de selection partagee |
US9847133B2 (en) * | 2016-01-19 | 2017-12-19 | Ememory Technology Inc. | Memory array capable of performing byte erase operation |
FR3054920B1 (fr) | 2016-08-05 | 2018-10-26 | Stmicroelectronics (Rousset) Sas | Dispositif compact de memoire non volatile |
TWI626656B (zh) * | 2017-04-24 | 2018-06-11 | 物聯記憶體科技股份有限公司 | 具有字元抹除與減少寫入干擾的非揮發性記憶體裝置 |
TWI632558B (zh) * | 2017-05-01 | 2018-08-11 | 卡比科技有限公司 | 非揮發性記憶體裝置及其操作方法 |
US11011533B2 (en) * | 2018-01-10 | 2021-05-18 | Ememory Technology Inc. | Memory structure and programing and reading methods thereof |
US10796763B2 (en) * | 2018-01-26 | 2020-10-06 | Stmicroelectronics (Rousset) Sas | Method for programming a split-gate memory cell and corresponding memory device |
JP7458380B2 (ja) * | 2018-09-14 | 2024-03-29 | 長江存儲科技有限責任公司 | 三次元メモリデバイス及びその形成方法 |
FR3091018B1 (fr) * | 2018-12-21 | 2023-01-20 | St Microelectronics Sa | Mémoire de puce électronique |
US11309353B2 (en) * | 2020-04-30 | 2022-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer-defined back-end transistor as memory selector |
US20220366984A1 (en) * | 2021-05-13 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuits and devices, and methods thereof |
US11984165B2 (en) * | 2022-05-24 | 2024-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device with reduced area |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2826496A1 (fr) * | 2001-06-25 | 2002-12-27 | St Microelectronics Sa | Memoire eeprom protegee contre les effets d'un claquage de transistor d'acces |
US7154785B2 (en) * | 2004-06-25 | 2006-12-26 | Micron Technology, Inc. | Charge pump circuitry having adjustable current outputs |
US8369148B2 (en) * | 2007-11-06 | 2013-02-05 | Macronix International Co., Ltd. | Operation methods for memory cell and array thereof immune to punchthrough leakage |
WO2009122569A1 (fr) * | 2008-04-01 | 2009-10-08 | 株式会社 東芝 | Dispositif d'enregistrement et de reproduction d'informations |
US8923049B2 (en) * | 2011-09-09 | 2014-12-30 | Aplus Flash Technology, Inc | 1T1b and 2T2b flash-based, data-oriented EEPROM design |
FR2987697A1 (fr) * | 2012-03-05 | 2013-09-06 | St Microelectronics Rousset | Procede de fabrication d'une memoire non volatile |
FR2987696B1 (fr) * | 2012-03-05 | 2014-11-21 | St Microelectronics Rousset | Procede de lecture ecriture de cellules memoire non volatiles |
US8760923B2 (en) * | 2012-08-28 | 2014-06-24 | Freescale Semiconductor, Inc. | Non-volatile memory (NVM) that uses soft programming |
FR2996680A1 (fr) * | 2012-10-10 | 2014-04-11 | St Microelectronics Rousset | Memoire non volatile comportant des transistors de selection verticaux |
WO2014153174A2 (fr) * | 2013-03-14 | 2014-09-25 | Silicon Storage Technology, Inc. | Dispositif et procédé d'algorithme de programme de mémoire non-volatile |
FR3021806B1 (fr) * | 2014-05-28 | 2017-09-01 | St Microelectronics Sa | Procede de programmation d'une cellule memoire non volatile comprenant une grille de transistor de selection partagee |
FR3025649B1 (fr) * | 2014-09-09 | 2016-12-09 | Stmicroelectronics Rousset | Procede de polarisation d’un plan de source enterre d’une memoire non volatile a grilles de selection verticales |
-
2014
- 2014-05-28 FR FR1454839A patent/FR3021806B1/fr not_active Expired - Fee Related
-
2015
- 2015-05-14 CN CN201510247063.1A patent/CN105280225B/zh active Active
- 2015-05-14 CN CN201520312733.9U patent/CN204904840U/zh not_active Expired - Fee Related
- 2015-05-22 US US14/719,913 patent/US9443598B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20150348635A1 (en) | 2015-12-03 |
CN105280225A (zh) | 2016-01-27 |
CN105280225B (zh) | 2019-07-16 |
CN204904840U (zh) | 2015-12-23 |
US9443598B2 (en) | 2016-09-13 |
FR3021806A1 (fr) | 2015-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20151204 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
ST | Notification of lapse |
Effective date: 20210105 |