JP4863844B2 - 電圧切替回路 - Google Patents
電圧切替回路 Download PDFInfo
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- JP4863844B2 JP4863844B2 JP2006302215A JP2006302215A JP4863844B2 JP 4863844 B2 JP4863844 B2 JP 4863844B2 JP 2006302215 A JP2006302215 A JP 2006302215A JP 2006302215 A JP2006302215 A JP 2006302215A JP 4863844 B2 JP4863844 B2 JP 4863844B2
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- voltage
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- 239000004065 semiconductor Substances 0.000 claims description 8
- 101100203212 Rattus norvegicus Shh gene Proteins 0.000 description 37
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 6
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
<端子Toutから電圧Vddを出力するため、EVdd信号を「H」レベルとした場合>
EVhh1信号及びEVhh2信号がともに「L」レベルであるため、オア回路O1は「L」レベルの信号を出力する。
<端子Toutから電圧Vhh1を出力するため、Ehh1信号を「H」レベルとした場合>
EVhh1信号が「H」レベル、EVhh2信号が「L」レベルであるため、オア回路O1は「H」レベルの信号を出力する。
<端子Toutから電圧Vll1を出力するため、Ell1信号を「H」レベルとした場合>
EVhh1信号及びEVhh2信号がともに「L」レベルであるため、オア回路O1は「L」レベルの信号を出力する。
I1,I2,I3,I4,I5,I6,I7,I8…インバータ
L1,L2,L3,L4,L5,L6…レベルシフタ
N1,N2,N3…トランジスタ(nチャネル型MOSFET)
O1…オア回路
P1、P2,P3,P4,P5,P7…トランジスタ(pチャネル型MOSFET)
P10,P11…トランジスタ(pチャネル型MOSFET)
Claims (4)
- 入力される複数の電圧を選択信号により選択し、選択された電圧を出力端子から出力する電圧切替回路であり、
半導体装置の論理回路を動作させる電源電圧を前記出力端子に出力する第1のPMOSトランジスタと、
前記電源電圧に比較して高い第1の電圧を前記出力端子に出力する第2のPMOSトランジスタと、
前記電源電圧に比較して低い第2の電圧を前記出力端子に出力する第3のPMOSトランジスタと、
前記出力端子に電源電圧及び第2の電圧を出力する場合、前記第1及び第3のトランジスタのウェル電圧を電源電圧とし、前記出力端子に第1の電圧を出力する場合、前記第1及び第3のトランジスタのウェル電圧を第1の電圧とするウェル電位制御部と、
前記第1,第2及び第3のPMOSトランジスタのゲートに、電源電圧からウェル電圧に出力電圧を変化させるレベルシフタの出力がそれぞれ接続され、選択信号の電圧レベルをレベルシフタでウェル電圧に変化させることにより前記第1,第2及び第3のPMOSトランジスタのゲートを確実にオン/オフ制御する
を有することを特徴とする電圧切替回路。 - 前記第1のPMOSトランジスタのソースに電源電圧が入力され、前記第2のPMOSトランジスタのソースに第1の電圧が入力され、前記第3のPMOSトランジスタのソースに第2の電圧が入力され、
第1,第2及び第3のPMOSトランジスタのドレインが前記出力端子に接続され、
第1,第2及び第3のPMOSトランジスタのゲートにそれぞれを選択する制御信号が入力されていることを特徴とする請求項1に記載の電圧切替回路。 - 前記ウェル電位制御部が、
前記電源電圧がソースに入力され、ゲートに前記第1の電圧を出力する第1の制御信号が入力された第4のPMOSトランジスタと、
ソースに前記第4のPMOSトランジスタのドレインが接続され、ゲートに前記第1の制御信号の反転された信号が入力され、ドレインが出力端子に接続された第5のPMOSトランジスタと
をさらに有し、
前記第4のPMOSトランジスタのドレインが第1及び第3のPMOSトランジスタのウェルに接続されていることを特徴とする請求項1または2に記載の電圧切替回路。 - ドレインが前記出力端子に接続され、ソースが前記第4のPMOSトランジスタのドレインに接続され、ゲートに前記第1の制御信号が入力されているNMOSトランジスタを有することを特徴とする請求項3に記載の電圧切替回路。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006302215A JP4863844B2 (ja) | 2006-11-08 | 2006-11-08 | 電圧切替回路 |
PCT/JP2007/071657 WO2008056712A1 (fr) | 2006-11-08 | 2007-11-07 | Circuit de mise en marche et d'arrêt de tension |
EP20070831388 EP2091153B1 (en) | 2006-11-08 | 2007-11-07 | Voltage switching circuit |
CN2007800492150A CN101573869B (zh) | 2006-11-08 | 2007-11-07 | 电压切换电路 |
KR1020097009470A KR101221177B1 (ko) | 2006-11-08 | 2007-11-07 | 전압 전환 회로 |
US12/513,976 US7911259B2 (en) | 2006-11-08 | 2007-11-07 | Voltage switching circuit |
TW96142625A TWI421664B (zh) | 2006-11-08 | 2007-11-08 | Voltage switching circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006302215A JP4863844B2 (ja) | 2006-11-08 | 2006-11-08 | 電圧切替回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008118582A JP2008118582A (ja) | 2008-05-22 |
JP4863844B2 true JP4863844B2 (ja) | 2012-01-25 |
Family
ID=39364526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006302215A Active JP4863844B2 (ja) | 2006-11-08 | 2006-11-08 | 電圧切替回路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7911259B2 (ja) |
EP (1) | EP2091153B1 (ja) |
JP (1) | JP4863844B2 (ja) |
KR (1) | KR101221177B1 (ja) |
CN (1) | CN101573869B (ja) |
TW (1) | TWI421664B (ja) |
WO (1) | WO2008056712A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012056266A1 (en) * | 2010-10-27 | 2012-05-03 | Freescale Semiconductor, Inc. | Voltage switching circuitry, integrated device and integrated circuit, and method of voltage switching |
US8494173B2 (en) * | 2011-10-28 | 2013-07-23 | Gn Resound A/S | Integrated circuit with configurable output cell |
CN104521146B (zh) * | 2012-09-06 | 2017-09-22 | 松下知识产权经营株式会社 | 半导体集成电路 |
KR102208313B1 (ko) * | 2014-10-30 | 2021-01-27 | 삼성전자주식회사 | 디스플레이 시스템 및 변환 장치 |
JP6498465B2 (ja) * | 2015-02-09 | 2019-04-10 | エイブリック株式会社 | 電源切替回路及び半導体装置 |
US9847133B2 (en) * | 2016-01-19 | 2017-12-19 | Ememory Technology Inc. | Memory array capable of performing byte erase operation |
US10063225B1 (en) * | 2017-06-11 | 2018-08-28 | Nanya Technology Corporation | Voltage switching device and method |
CN111342541B (zh) * | 2018-12-19 | 2021-04-16 | 智原微电子(苏州)有限公司 | 电源切换电路 |
US10924112B2 (en) * | 2019-04-11 | 2021-02-16 | Ememory Technology Inc. | Bandgap reference circuit |
TWI792692B (zh) * | 2021-11-18 | 2023-02-11 | 力晶積成電子製造股份有限公司 | 三態高壓開關電路 |
Family Cites Families (19)
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IT1232973B (it) * | 1987-12-01 | 1992-03-11 | Sgs Microelettronica Spa | Dispositivo di commutazione dell'alimentazione di tensione per memorie non volatili in tecnologia mos |
US5157280A (en) * | 1991-02-13 | 1992-10-20 | Texas Instruments Incorporated | Switch for selectively coupling a power supply to a power bus |
JPH05258584A (ja) * | 1992-03-11 | 1993-10-08 | Sharp Corp | 電源切換回路 |
US5331228A (en) * | 1992-07-31 | 1994-07-19 | Sgs-Thomson Microelectronics, Inc. | Output driver circuit |
US5430403A (en) * | 1993-09-20 | 1995-07-04 | Micrel, Inc. | Field effect transistor with switchable body to source connection |
TW295745B (ja) * | 1995-04-26 | 1997-01-11 | Matsushita Electric Ind Co Ltd | |
JP4354539B2 (ja) * | 1995-12-20 | 2009-10-28 | テキサス インスツルメンツ インコーポレイテツド | Mosトランジスタのボディ効果の制御 |
US5708581A (en) * | 1996-07-12 | 1998-01-13 | Hewlett-Packard Company | Method for maximizing feedforward orthogonality for minimizing servo system nuller instability |
JP3648975B2 (ja) | 1998-02-27 | 2005-05-18 | セイコーエプソン株式会社 | 半導体記憶装置及びそれを用いた半導体装置 |
EP0961288B1 (en) * | 1998-05-29 | 2004-05-19 | STMicroelectronics S.r.l. | Monolithically integrated selector for electrically programmable memory cells devices |
TW395096B (en) * | 1998-08-13 | 2000-06-21 | Winbond Electronics Corp | Current switching circuit applying in a digital-to-analog converter and the method thereof |
JP4090231B2 (ja) * | 2001-11-01 | 2008-05-28 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP4321678B2 (ja) * | 2003-08-20 | 2009-08-26 | パナソニック株式会社 | 半導体集積回路 |
KR100549872B1 (ko) * | 2003-12-10 | 2006-02-06 | 삼성전자주식회사 | 차동 스위칭 회로 및 디지털 아날로그 변환기 |
KR100607349B1 (ko) * | 2004-08-26 | 2006-07-28 | 주식회사 하이닉스반도체 | 반도체 장치의 고전압 스위치 회로 |
KR100735010B1 (ko) * | 2005-09-08 | 2007-07-03 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 위한 전압 발생회로 |
JP2008153415A (ja) * | 2006-12-18 | 2008-07-03 | Renesas Technology Corp | 半導体集積回路およびその製造方法 |
JP2009141640A (ja) * | 2007-12-06 | 2009-06-25 | Seiko Instruments Inc | 電源切換回路 |
US7639041B1 (en) * | 2008-07-28 | 2009-12-29 | Altera Corporation | Hotsocket-compatible body bias circuitry with power-up current reduction capabilities |
-
2006
- 2006-11-08 JP JP2006302215A patent/JP4863844B2/ja active Active
-
2007
- 2007-11-07 CN CN2007800492150A patent/CN101573869B/zh active Active
- 2007-11-07 EP EP20070831388 patent/EP2091153B1/en not_active Not-in-force
- 2007-11-07 KR KR1020097009470A patent/KR101221177B1/ko active IP Right Grant
- 2007-11-07 US US12/513,976 patent/US7911259B2/en active Active
- 2007-11-07 WO PCT/JP2007/071657 patent/WO2008056712A1/ja active Application Filing
- 2007-11-08 TW TW96142625A patent/TWI421664B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP2091153B1 (en) | 2012-06-20 |
TW200837524A (en) | 2008-09-16 |
TWI421664B (zh) | 2014-01-01 |
WO2008056712A1 (fr) | 2008-05-15 |
US7911259B2 (en) | 2011-03-22 |
CN101573869B (zh) | 2012-11-28 |
EP2091153A4 (en) | 2011-06-08 |
KR20090080067A (ko) | 2009-07-23 |
JP2008118582A (ja) | 2008-05-22 |
CN101573869A (zh) | 2009-11-04 |
EP2091153A1 (en) | 2009-08-19 |
US20100013547A1 (en) | 2010-01-21 |
KR101221177B1 (ko) | 2013-01-10 |
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