DE602008006652D1 - Nicht flüchtiges speicherelement, verfahren zu seiner herstellung sowie nicht flüchtige halbleitervorrichtung mit dem nicht flüchtigen speicherelement - Google Patents

Nicht flüchtiges speicherelement, verfahren zu seiner herstellung sowie nicht flüchtige halbleitervorrichtung mit dem nicht flüchtigen speicherelement

Info

Publication number
DE602008006652D1
DE602008006652D1 DE602008006652T DE602008006652T DE602008006652D1 DE 602008006652 D1 DE602008006652 D1 DE 602008006652D1 DE 602008006652 T DE602008006652 T DE 602008006652T DE 602008006652 T DE602008006652 T DE 602008006652T DE 602008006652 D1 DE602008006652 D1 DE 602008006652D1
Authority
DE
Germany
Prior art keywords
memory element
volatile memory
volatile
production
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008006652T
Other languages
English (en)
Inventor
Yoshihiko Kanzawa
Koji Katayama
Satoru Fujii
Shunsaku Muraoka
Koichi Osano
Satoru Mitani
Ryoko Miyanaga
Takeshi Takagi
Kazuhiko Shimakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of DE602008006652D1 publication Critical patent/DE602008006652D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making
DE602008006652T 2007-06-05 2008-03-26 Nicht flüchtiges speicherelement, verfahren zu seiner herstellung sowie nicht flüchtige halbleitervorrichtung mit dem nicht flüchtigen speicherelement Active DE602008006652D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007149032 2007-06-05
PCT/JP2008/000745 WO2008149484A1 (ja) 2007-06-05 2008-03-26 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置

Publications (1)

Publication Number Publication Date
DE602008006652D1 true DE602008006652D1 (de) 2011-06-16

Family

ID=40093318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008006652T Active DE602008006652D1 (de) 2007-06-05 2008-03-26 Nicht flüchtiges speicherelement, verfahren zu seiner herstellung sowie nicht flüchtige halbleitervorrichtung mit dem nicht flüchtigen speicherelement

Country Status (7)

Country Link
US (2) US8022502B2 (de)
EP (1) EP2063467B1 (de)
JP (2) JP4253038B2 (de)
KR (1) KR101083166B1 (de)
CN (1) CN101542730B (de)
DE (1) DE602008006652D1 (de)
WO (1) WO2008149484A1 (de)

Families Citing this family (152)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7948789B2 (en) * 2007-04-09 2011-05-24 Panasonic Corporation Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus
WO2009025037A1 (ja) * 2007-08-22 2009-02-26 Fujitsu Limited 抵抗変化型素子
WO2010021134A1 (ja) * 2008-08-20 2010-02-25 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法
WO2010038442A1 (ja) * 2008-09-30 2010-04-08 パナソニック株式会社 抵抗変化素子の駆動方法、初期処理方法、及び不揮発性記憶装置
JP5400797B2 (ja) * 2008-12-04 2014-01-29 パナソニック株式会社 不揮発性記憶素子
JP4795485B2 (ja) * 2008-12-05 2011-10-19 パナソニック株式会社 不揮発性記憶素子及びその製造方法
WO2010067585A1 (ja) * 2008-12-10 2010-06-17 パナソニック株式会社 抵抗変化素子およびそれを用いた不揮発性半導体記憶装置
JP5401970B2 (ja) * 2008-12-17 2014-01-29 日本電気株式会社 不揮発性記憶装置
JP4607256B2 (ja) * 2008-12-18 2011-01-05 パナソニック株式会社 不揮発性記憶装置及びその書き込み方法
WO2010086916A1 (ja) * 2009-01-29 2010-08-05 パナソニック株式会社 抵抗変化素子およびその製造方法
WO2010087211A1 (ja) * 2009-02-02 2010-08-05 パナソニック株式会社 不揮発性記憶素子、不揮発性記憶装置、不揮発性半導体装置、および不揮発性記憶素子の製造方法
CN101960595B (zh) * 2009-02-04 2012-11-14 松下电器产业株式会社 非易失性存储元件
KR101519363B1 (ko) 2009-02-16 2015-05-13 삼성전자 주식회사 저항체를 이용한 멀티 레벨 비휘발성 메모리 장치
JP4628501B2 (ja) 2009-03-25 2011-02-09 パナソニック株式会社 抵抗変化素子の駆動方法及び不揮発性記憶装置
WO2010116754A1 (ja) * 2009-04-10 2010-10-14 パナソニック株式会社 不揮発性記憶素子の駆動方法
JP2010251352A (ja) * 2009-04-10 2010-11-04 Panasonic Corp 不揮発性記憶素子及びその製造方法
JP4643767B2 (ja) * 2009-04-15 2011-03-02 パナソニック株式会社 抵抗変化型不揮発性記憶装置
US8406035B2 (en) 2009-05-14 2013-03-26 Panasonic Corporation Nonvolatile memory device and method of writing data to nonvolatile memory device
WO2010143396A1 (ja) * 2009-06-08 2010-12-16 パナソニック株式会社 抵抗変化型不揮発性記憶素子のフォーミング方法および抵抗変化型不揮発性記憶装置
WO2010143414A1 (ja) * 2009-06-08 2010-12-16 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法および抵抗変化型不揮発性記憶装置
US8610102B2 (en) * 2009-06-18 2013-12-17 Panasonic Corporation Nonvolatile memory device and manufacturing method thereof
WO2011007538A1 (ja) * 2009-07-13 2011-01-20 パナソニック株式会社 抵抗変化型素子および抵抗変化型記憶装置
JP4703789B2 (ja) 2009-07-28 2011-06-15 パナソニック株式会社 抵抗変化型不揮発性記憶装置及びその書き込み方法
JP5417445B2 (ja) 2009-08-28 2014-02-12 パナソニック株式会社 半導体記憶装置の製造方法
JP2011054766A (ja) * 2009-09-02 2011-03-17 Semiconductor Technology Academic Research Center 抵抗変化型メモリとその製造方法
CN102217067B (zh) * 2009-09-14 2014-07-30 松下电器产业株式会社 非易失性存储装置及其制造方法
US8274065B2 (en) * 2009-10-19 2012-09-25 Macronix International Co., Ltd. Memory and method of fabricating the same
JPWO2011052239A1 (ja) * 2009-11-02 2013-03-14 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法
JP5468087B2 (ja) * 2009-11-30 2014-04-09 パナソニック株式会社 不揮発性記憶素子及び不揮発性記憶装置
US8530321B2 (en) * 2009-12-18 2013-09-10 Panasonic Corporation Variable resistance element and manufacturing method thereof
CN102656689B (zh) * 2009-12-28 2014-12-10 松下电器产业株式会社 存储装置及其制造方法
US8450182B2 (en) 2010-01-25 2013-05-28 Panasonic Corporation Method of manufacturing non-volatile semiconductor memory element and method of manufacturing non-volatile semiconductor memory device
CN102301425B (zh) 2010-02-02 2013-10-30 松下电器产业株式会社 电阻变化元件的驱动方法、初始处理方法、以及非易失性存储装置
JP2011165883A (ja) * 2010-02-09 2011-08-25 Toshiba Corp 半導体記憶装置およびその製造方法
CN102859690B (zh) 2010-02-23 2015-02-18 松下电器产业株式会社 非易失性存储装置的制造方法、非易失性存储元件、及非易失性存储装置
JP5121864B2 (ja) * 2010-03-02 2013-01-16 株式会社東芝 不揮発性半導体記憶装置
JP4975887B2 (ja) * 2010-03-08 2012-07-11 パナソニック株式会社 不揮発性記憶素子およびその製造方法
KR20110101983A (ko) * 2010-03-10 2011-09-16 삼성전자주식회사 바이폴라 메모리셀 및 이를 포함하는 메모리소자
JP5001464B2 (ja) * 2010-03-19 2012-08-15 パナソニック株式会社 不揮発性記憶素子、その製造方法、その設計支援方法および不揮発性記憶装置
JP5128718B2 (ja) * 2010-03-25 2013-01-23 パナソニック株式会社 不揮発性記憶素子の駆動方法および不揮発性記憶装置
CN102804278B (zh) * 2010-03-30 2014-10-01 松下电器产业株式会社 电阻变化型非易失性存储元件的塑造方法及电阻变化型非易失性存储装置
EP2561545B1 (de) * 2010-04-19 2017-10-25 Hewlett-Packard Enterprise Development LP Nanoskalige schaltvorrichtungen mit teilweise oxidierten elektroden
JP5154711B2 (ja) * 2010-04-21 2013-02-27 パナソニック株式会社 不揮発性記憶装置及びその製造方法
CN102270738A (zh) * 2010-06-03 2011-12-07 北京大学 包含电阻器的存储单元的制造方法
CN102782846B (zh) * 2010-06-10 2015-05-20 松下电器产业株式会社 非易失性存储元件和具有其的非易失性存储装置
CN102473707A (zh) 2010-07-01 2012-05-23 松下电器产业株式会社 非易失性存储单元、非易失性存储单元阵列、以及其制造方法
US8785238B2 (en) 2010-07-01 2014-07-22 Panasonic Corporation Nonvolatile memory element and method for manufacturing same
US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
CN101894911A (zh) * 2010-07-13 2010-11-24 复旦大学 高数据保持能力的电阻型存储器的制备方法
CN102473708A (zh) * 2010-07-14 2012-05-23 松下电器产业株式会社 非易失性存储装置及其制造方法
WO2012014447A1 (ja) 2010-07-27 2012-02-02 パナソニック株式会社 不揮発性記憶装置の製造方法
KR20120021539A (ko) * 2010-08-06 2012-03-09 삼성전자주식회사 비휘발성 메모리요소 및 이를 포함하는 메모리소자
WO2012023269A1 (ja) * 2010-08-17 2012-02-23 パナソニック株式会社 不揮発性記憶装置およびその製造方法
KR101744758B1 (ko) 2010-08-31 2017-06-09 삼성전자 주식회사 비휘발성 메모리요소 및 이를 포함하는 메모리소자
JP4972238B2 (ja) * 2010-09-28 2012-07-11 パナソニック株式会社 抵抗変化型不揮発性記憶素子のフォーミング方法
JP5680927B2 (ja) * 2010-10-01 2015-03-04 シャープ株式会社 可変抵抗素子、及び、不揮発性半導体記憶装置
US20130082230A1 (en) * 2010-10-01 2013-04-04 Koji Katayama Method of manufacturing nonvolatile memory element, and nonvolatile memory element
WO2012046454A1 (ja) 2010-10-08 2012-04-12 パナソニック株式会社 不揮発性記憶素子およびその製造方法
WO2012056689A1 (ja) 2010-10-29 2012-05-03 パナソニック株式会社 不揮発性記憶装置
US8377718B2 (en) * 2010-11-10 2013-02-19 Micron Technology, Inc. Methods of forming a crystalline Pr1-xCaxMnO3 (PCMO) material and methods of forming semiconductor device structures comprising crystalline PCMO
US8574957B2 (en) 2010-11-12 2013-11-05 Panasonic Corporation Method for manufacturing nonvolatile semiconductor memory element
US9000506B2 (en) 2010-11-19 2015-04-07 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory element and method for manufacturing the same
JP5148025B2 (ja) 2010-11-19 2013-02-20 パナソニック株式会社 不揮発性半導体記憶素子の製造方法
JP5144840B2 (ja) 2010-11-24 2013-02-13 パナソニック株式会社 不揮発性記憶素子、その製造方法、不揮発性記憶装置及び不揮発性記憶素子の設計支援方法
JP5442876B2 (ja) * 2010-12-03 2014-03-12 パナソニック株式会社 不揮発性記憶素子ならびに不揮発性記憶装置及びそれらの製造方法
WO2012090404A1 (ja) * 2010-12-27 2012-07-05 パナソニック株式会社 不揮発性記憶素子、その製造方法
US8437177B2 (en) 2011-01-20 2013-05-07 Panasonic Corporation Nonvolatile latch circuit and nonvolatile flip-flop circuit
JP5159996B2 (ja) * 2011-01-31 2013-03-13 パナソニック株式会社 抵抗変化型素子の製造方法
US8619466B2 (en) 2011-02-07 2013-12-31 Panasonic Corporation Nonvolatile latch circuit, nonvolatile flip-flop circuit, and nonvolatile signal processing device
CN103262240B (zh) * 2011-02-23 2016-08-03 松下知识产权经营株式会社 非易失性存储元件及其制造方法
JP5438707B2 (ja) * 2011-03-04 2014-03-12 シャープ株式会社 可変抵抗素子及びその製造方法、並びに、当該可変抵抗素子を備えた不揮発性半導体記憶装置
JP5518250B2 (ja) 2011-03-10 2014-06-11 パナソニック株式会社 不揮発性記憶装置の製造方法
US9153319B2 (en) 2011-03-14 2015-10-06 Panasonic Intellectual Property Management Co., Ltd. Method for driving nonvolatile memory element, and nonvolatile memory device having a variable resistance element
US8847196B2 (en) 2011-05-17 2014-09-30 Micron Technology, Inc. Resistive memory cell
US9269903B2 (en) 2011-06-08 2016-02-23 Ulvac, Inc. Method of manufacturing variable resistance element and apparatus for manufacturing the same
KR101528094B1 (ko) * 2011-06-10 2015-06-10 가부시키가이샤 아루박 저항 변화 소자 및 그 제조 방법
KR20120139082A (ko) 2011-06-16 2012-12-27 삼성전자주식회사 멀티비트 메모리요소, 이를 포함하는 메모리소자 및 이들의 제조방법
JP5291269B2 (ja) 2011-06-27 2013-09-18 パナソニック株式会社 不揮発性半導体記憶素子、不揮発性半導体記憶装置およびその製造方法
US8619471B2 (en) * 2011-07-27 2013-12-31 Micron Technology, Inc. Apparatuses and methods including memory array data line selection
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8867259B2 (en) 2011-08-11 2014-10-21 Panasonic Corporation Method of programming variable resistance nonvolatile memory element
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
WO2013038647A1 (ja) 2011-09-16 2013-03-21 パナソニック株式会社 不揮発性記憶素子、不揮発性記憶装置、不揮発性記憶素子の製造方法、及び不揮発性記憶装置の製造方法
JP5404977B2 (ja) * 2011-09-27 2014-02-05 パナソニック株式会社 不揮発性記憶素子、不揮発性記憶装置及びそれらの製造方法
US20130286714A1 (en) * 2011-09-28 2013-10-31 Panasonic Corporation Data write method for writing data to nonvolatile memory element, and nonvolatile memory device
US9082479B2 (en) 2011-10-06 2015-07-14 Panasonic Intellectual Property Management Co., Ltd. Nonvolatile memory element and nonvolatile memory device
US9142775B2 (en) 2011-10-11 2015-09-22 Panasonic Intellectual Property Management Co., Ltd. Method of manufacturing semiconductor memory device
WO2013054515A1 (ja) 2011-10-12 2013-04-18 パナソニック株式会社 不揮発性半導体記憶装置およびその製造方法
JP5874905B2 (ja) * 2011-10-18 2016-03-02 国立研究開発法人物質・材料研究機構 アルミナ抵抗変化型メモリ素子の製造方法
CN102368535B (zh) * 2011-11-10 2013-11-27 复旦大学 一种可擦写式双层薄膜结构阻变存储单元及其制备方法
KR20130052371A (ko) * 2011-11-11 2013-05-22 삼성전자주식회사 비휘발성 메모리요소 및 이를 포함하는 메모리소자
WO2013073187A1 (ja) 2011-11-17 2013-05-23 パナソニック株式会社 抵抗変化型不揮発性記憶装置及びその製造方法
JP5226158B1 (ja) 2011-11-22 2013-07-03 パナソニック株式会社 不揮発性ラッチ回路、不揮発性フリップフロップ回路および不揮発性信号処理装置
US9001557B2 (en) 2011-12-02 2015-04-07 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory element writing method and variable resistance nonvolatile memory device
US8637413B2 (en) 2011-12-02 2014-01-28 Sandisk 3D Llc Nonvolatile resistive memory element with a passivated switching layer
WO2013094169A1 (ja) 2011-12-19 2013-06-27 パナソニック株式会社 不揮発性記憶装置及びその製造方法
JP5871313B2 (ja) * 2012-01-18 2016-03-01 国立大学法人大阪大学 不揮発性メモリセル、これを備える不揮発性メモリ装置および遷移金属酸化物の選定方法。
US20150171324A1 (en) * 2012-01-19 2015-06-18 Panasonic Corporation Method of manufacturing variable resistance nonvolatile memory device, and variable resistance nonvolatile memory device
US8698119B2 (en) 2012-01-19 2014-04-15 Sandisk 3D Llc Nonvolatile memory device using a tunnel oxide as a current limiter element
US8779406B2 (en) 2012-01-23 2014-07-15 Panasonic Corporation Nonvolatile memory element and method for manufacturing the same
WO2013111545A1 (ja) 2012-01-25 2013-08-01 パナソニック株式会社 抵抗変化型不揮発性記憶素子とその製造方法
US8686386B2 (en) * 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US20140056056A1 (en) * 2012-02-17 2014-02-27 Panasonic Corporation Method for reading data from nonvolatile memory element, and nonvolatile memory device
JP5346144B1 (ja) 2012-02-20 2013-11-20 パナソニック株式会社 不揮発性記憶装置およびその製造方法
US8878152B2 (en) * 2012-02-29 2014-11-04 Intermolecular, Inc. Nonvolatile resistive memory element with an integrated oxygen isolation structure
WO2013140754A1 (ja) 2012-03-23 2013-09-26 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法および抵抗変化型不揮発性記憶装置
JP2013201276A (ja) 2012-03-23 2013-10-03 Toshiba Corp 抵抗変化素子及び不揮発性記憶装置
JP5597320B2 (ja) 2012-03-29 2014-10-01 パナソニック株式会社 不揮発性記憶装置の製造方法
US9685608B2 (en) * 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US9111610B2 (en) * 2012-04-20 2015-08-18 Panasonic Intellectual Property Management Co., Ltd. Method of driving nonvolatile memory element and nonvolatile memory device
KR20150006825A (ko) 2012-04-26 2015-01-19 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 맞춤식 비선형 전기 장치
WO2014025434A2 (en) * 2012-05-15 2014-02-13 The Regents Of The University Of Michigan Complementary resistive switching in single resistive memory devices
US9741765B1 (en) 2012-08-14 2017-08-22 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
CN102779941B (zh) * 2012-08-22 2015-02-18 中国科学院上海微系统与信息技术研究所 低功耗相变存储单元及其制备方法
CN103907187B (zh) * 2012-09-05 2016-04-13 株式会社爱发科 电阻转变元件及其制作方法
JP5571833B2 (ja) 2012-09-14 2014-08-13 パナソニック株式会社 不揮発性記憶素子及び不揮発性記憶素子の製造方法
KR20140035558A (ko) * 2012-09-14 2014-03-24 삼성전자주식회사 가변 저항 메모리 장치 및 그 동작 방법
US20140077149A1 (en) * 2012-09-14 2014-03-20 Industrial Technology Research Institute Resistance memory cell, resistance memory array and method of forming the same
JP5572749B2 (ja) 2012-09-26 2014-08-13 パナソニック株式会社 不揮発性記憶素子及びその製造方法
JP5636081B2 (ja) 2012-09-26 2014-12-03 パナソニック株式会社 不揮発性記憶装置およびその製造方法
US9042159B2 (en) * 2012-10-15 2015-05-26 Marvell World Trade Ltd. Configuring resistive random access memory (RRAM) array for write operations
US9047945B2 (en) 2012-10-15 2015-06-02 Marvell World Trade Ltd. Systems and methods for reading resistive random access memory (RRAM) cells
US8885388B2 (en) 2012-10-24 2014-11-11 Marvell World Trade Ltd. Apparatus and method for reforming resistive memory cells
US9042162B2 (en) 2012-10-31 2015-05-26 Marvell World Trade Ltd. SRAM cells suitable for Fin field-effect transistor (FinFET) process
CN105190760B (zh) 2012-11-12 2018-04-24 马维尔国际贸易有限公司 在存储器系统中并行地使用具有nmos通过门和pmos通过门两者的sram单元
US9172038B2 (en) 2012-11-14 2015-10-27 Panasonic Intellectual Property Management Co., Ltd. Nonvolatile memory element and method of manufacturing the same
JP2014103326A (ja) 2012-11-21 2014-06-05 Panasonic Corp 不揮発性記憶素子およびその製造方法
JP5583738B2 (ja) * 2012-11-22 2014-09-03 株式会社半導体理工学研究センター 抵抗変化型メモリ
US20140175367A1 (en) * 2012-12-20 2014-06-26 Intermolecular Inc. Materials for Thin Resisive Switching Layers of Re-RAM Cells
CN103066206B (zh) * 2012-12-25 2016-03-23 清华大学 一种阻变式存储单元及其形成方法
JP2014127566A (ja) * 2012-12-26 2014-07-07 Panasonic Corp 不揮発性記憶装置の製造方法および不揮発性記憶装置
FR3001571B1 (fr) * 2013-01-30 2016-11-25 Commissariat Energie Atomique Procede de programmation d'un dispositif memoire a commutation bipolaire
JP5650855B2 (ja) 2013-02-08 2015-01-07 パナソニックＩｐマネジメント株式会社 不揮発性記憶素子の製造方法、不揮発性記憶素子及び不揮発性記憶装置
US20140241031A1 (en) 2013-02-28 2014-08-28 Sandisk 3D Llc Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
JP6201151B2 (ja) 2013-03-18 2017-09-27 パナソニックＩｐマネジメント株式会社 不揮発性記憶装置及びその製造方法
JP2014211937A (ja) 2013-04-03 2014-11-13 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法および抵抗変化型不揮発性記憶装置
KR101977271B1 (ko) * 2013-04-05 2019-05-10 에스케이하이닉스 주식회사 반도체 장치의 제조 방법
JP6251885B2 (ja) 2013-04-26 2017-12-27 パナソニックＩｐマネジメント株式会社 抵抗変化型不揮発性記憶装置およびその書き込み方法
US9478584B2 (en) 2013-12-16 2016-10-25 Panasonic Intellectual Property Management Co., Ltd. Nonvolatile memory device and method for manufacturing the same
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
US9054308B1 (en) * 2014-03-04 2015-06-09 Sandisk 3D Llc Plasma reduction method for modifying metal oxide stoichiometry in ReRAM
JP6391009B2 (ja) 2014-03-17 2018-09-19 パナソニックＩｐマネジメント株式会社 抵抗変化型不揮発性記憶素子の製造方法
US9847481B2 (en) 2015-10-27 2017-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Metal landing on top electrode of RRAM
US9653682B1 (en) * 2016-02-05 2017-05-16 Taiwan Semiconductor Manufacturing Company Ltd. Resistive random access memory structure
US9923139B2 (en) * 2016-03-11 2018-03-20 Micron Technology, Inc. Conductive hard mask for memory device formation
WO2018057022A1 (en) * 2016-09-25 2018-03-29 Intel Corporation Barriers for metal filament memory devices
WO2018190071A1 (ja) * 2017-04-11 2018-10-18 ソニーセミコンダクタソリューションズ株式会社 記憶装置
US10163781B1 (en) 2017-05-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of forming the same
KR102492033B1 (ko) 2018-03-26 2023-01-26 에스케이하이닉스 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
US10839886B2 (en) * 2018-06-11 2020-11-17 Western Digital Technologies, Inc. Method and apparatus for adaptive data retention management in non-volatile memory
JP7308026B2 (ja) 2018-12-26 2023-07-13 ヌヴォトンテクノロジージャパン株式会社 抵抗変化型不揮発性記憶素子及びそれを用いた抵抗変化型不揮発性記憶装置
CN114093908A (zh) 2020-08-24 2022-02-25 联华电子股份有限公司 混合式随机存取存储器的系统架构、结构以及其制作方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263647A (ja) 1994-02-04 1995-10-13 Canon Inc 電子回路装置
EP1153434A1 (de) 1999-02-17 2001-11-14 International Business Machines Corporation Mikroelektronisches bauelement, um information zu speichern, und verfahren zu deren speicherung
US6473332B1 (en) 2001-04-04 2002-10-29 The University Of Houston System Electrically variable multi-state resistance computing
US6965137B2 (en) * 2002-08-02 2005-11-15 Unity Semiconductor Corporation Multi-layer conductive memory device
US6927120B2 (en) 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Method for forming an asymmetric crystalline structure memory cell
KR100773537B1 (ko) 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
KR101051704B1 (ko) 2004-04-28 2011-07-25 삼성전자주식회사 저항 구배를 지닌 다층막을 이용한 메모리 소자
JP4830275B2 (ja) 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
JP4848633B2 (ja) * 2004-12-14 2011-12-28 ソニー株式会社 記憶素子及び記憶装置
KR100693409B1 (ko) * 2005-01-14 2007-03-12 광주과학기술원 산화막의 저항변화를 이용한 비휘발성 기억소자 및 그제조방법
JP2006203098A (ja) 2005-01-24 2006-08-03 Sharp Corp 不揮発性半導体記憶装置
JP5049483B2 (ja) * 2005-04-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
JP4894757B2 (ja) * 2005-07-29 2012-03-14 富士通株式会社 抵抗記憶素子及び不揮発性半導体記憶装置
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
JP3989506B2 (ja) 2005-12-27 2007-10-10 シャープ株式会社 可変抵抗素子とその製造方法ならびにそれを備えた半導体記憶装置
JPWO2007138646A1 (ja) * 2006-05-25 2009-10-01 株式会社日立製作所 不揮発性メモリ素子およびその製造方法ならびに不揮発性メモリ素子を用いた半導体装置
JP5010891B2 (ja) * 2006-10-16 2012-08-29 富士通株式会社 抵抗変化型素子
CN101636840B (zh) * 2006-11-17 2011-05-25 松下电器产业株式会社 非易失性存储元件、非易失性存储器件、非易失性半导体器件以及非易失性存储元件的制造方法
US7863087B1 (en) * 2007-05-09 2011-01-04 Intermolecular, Inc Methods for forming resistive-switching metal oxides for nonvolatile memory elements
JP5422552B2 (ja) * 2007-05-09 2014-02-19 インターモレキュラー， インコーポレイテッド 抵抗性スイッチング不揮発性メモリ要素

Also Published As

Publication number Publication date
EP2063467A1 (de) 2009-05-27
US20090283736A1 (en) 2009-11-19
JP5259435B2 (ja) 2013-08-07
WO2008149484A1 (ja) 2008-12-11
CN101542730B (zh) 2011-04-06
CN101542730A (zh) 2009-09-23
EP2063467B1 (de) 2011-05-04
US8445319B2 (en) 2013-05-21
JP2009124167A (ja) 2009-06-04
US8022502B2 (en) 2011-09-20
JPWO2008149484A1 (ja) 2010-08-19
US20110294259A1 (en) 2011-12-01
KR101083166B1 (ko) 2011-11-11
JP4253038B2 (ja) 2009-04-08
KR20090075777A (ko) 2009-07-09
EP2063467A4 (de) 2009-12-16

Similar Documents

Publication Publication Date Title
DE602008006652D1 (de) Nicht flüchtiges speicherelement, verfahren zu seiner herstellung sowie nicht flüchtige halbleitervorrichtung mit dem nicht flüchtigen speicherelement
EP2077580A4 (de) Nicht flüchtiges speicherelement, nicht flüchtige speichervorrichtung, nicht flüchtige halbleitervorrichtung und verfahren zur herstellung eines nicht flüchtigen speicherelements
EP2136398A4 (de) Halbleiterspeichervorrichtung und herstellungsverfahren dafür
EP2234160A4 (de) Nichtflüchtige halbleiterspeicheranordnung und verfahren zu ihrer herstellung
TWI366893B (en) Non-volatile memory device and method for manufacturing the same
TWI351075B (en) Semiconductor device, embedded memory, and method of fabricating the same
TWI369760B (en) Non-volatile semiconductor memory device and method of making the same
EP2201601A4 (de) Nicht flüchtiges halbleiterbauelement und herstellungsverfahren dafür
EP2276066A4 (de) Halbleiterbauelement und verfahren zu seiner herstellung
EP2246895A4 (de) Halbleiterbauelement und verfahren zu seiner herstellung
DE602005009793D1 (de) Phasenwechselspeicher-Vorrichtung und Verfahren zu ihrer Herstellung
EP2225774A4 (de) Halbleiterspeichervorrichtung und herstellungsverfahren dafür
EP2209139A4 (de) Nichtflüchtiges speicherelement und das nichtflüchtige speicherelement benutzende nichtflüchtige halbleiteranordnung
EP2244288A4 (de) Halbleiterelementmodul und verfahren zu seiner herstellung
EP2319044A4 (de) Speichersystem und verfahren mit gestapelten speicherchips und system mit dem speichersystem
TWI348701B (en) Semiconductor memory and method for testing the same
DE102007031935B8 (de) Bauteil mit funktionellen Elementen sowie Verfahren zu dessen Herstellung
EP2133909A4 (de) Halbleiteranordnung und verfahren zu ihrer herstellung
EP2352261A4 (de) Pfadberechnungsverfahren, knotenvorrichtung und pfadberechnungselement
EP2109134A4 (de) Optisches element, belichtungsvorrichtung mit dem optischen element und bauelementeherstellungsverfahren
DE602007013327D1 (de) Halbleiterspeicher und -system
EP2239046A4 (de) Spiralfolienelement und damit versehene spiralfolienfiltrationsvorrichtung und verwaltungssystem für eine folienfiltrationsvorrichtung und die vorrichtung verwendendes verwaltungsverfahren für eine folienfiltrationsvorrichtung
EP2172415A4 (de) Silizium-struktur, methode zu deren herstellung und sensorchip
EP2219215A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
DE602007009007D1 (de) Halbleiterspeicher und -system