BRPI0918071A2 - dispositivo de emissão de luz. acondicionamento de resina, corpo moldado em resina, e métodos para fabricar o dispositivo de emissão de luz, o acondicionamento de resina e o corpo moldado em resina - Google Patents

dispositivo de emissão de luz. acondicionamento de resina, corpo moldado em resina, e métodos para fabricar o dispositivo de emissão de luz, o acondicionamento de resina e o corpo moldado em resina

Info

Publication number
BRPI0918071A2
BRPI0918071A2 BRPI0918071-0A BRPI0918071A BRPI0918071A2 BR PI0918071 A2 BRPI0918071 A2 BR PI0918071A2 BR PI0918071 A BRPI0918071 A BR PI0918071A BR PI0918071 A2 BRPI0918071 A2 BR PI0918071A2
Authority
BR
Brazil
Prior art keywords
resin
light emitting
emitting device
molded body
packaging
Prior art date
Application number
BRPI0918071-0A
Other languages
English (en)
Japanese (ja)
Inventor
Ichikawa Hirofumi
Hayashi Masaki
Sasaoka Shimpei
Miki Tomohide
Original Assignee
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=41796902&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BRPI0918071(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nichia Corporation filed Critical Nichia Corporation
Publication of BRPI0918071A2 publication Critical patent/BRPI0918071A2/pt
Publication of BRPI0918071B1 publication Critical patent/BRPI0918071B1/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/0053—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor combined with a final operation, e.g. shaping
    • B29C45/0055—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
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    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
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    • H01L33/504—Elements with two or more wavelength conversion materials
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    • H01L33/52—Encapsulations
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    • H01L33/56—Materials, e.g. epoxy or silicone resin
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C2793/00—Shaping techniques involving a cutting or machining operation
    • B29C2793/009—Shaping techniques involving a cutting or machining operation after shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00012—Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
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    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
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    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Led Device Packages (AREA)
BRPI0918071-0A 2008-09-03 2009-08-27 Método de fabricação de dispositivo de emissão de luz BRPI0918071B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-225408 2008-09-03
JP2008225408A JP5217800B2 (ja) 2008-09-03 2008-09-03 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法
PCT/JP2009/004170 WO2010026716A1 (ja) 2008-09-03 2009-08-27 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法

Publications (2)

Publication Number Publication Date
BRPI0918071A2 true BRPI0918071A2 (pt) 2018-09-25
BRPI0918071B1 BRPI0918071B1 (pt) 2020-02-18

Family

ID=41796902

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0918071-0A BRPI0918071B1 (pt) 2008-09-03 2009-08-27 Método de fabricação de dispositivo de emissão de luz

Country Status (9)

Country Link
US (10) US8530250B2 (pt)
EP (3) EP3598509A1 (pt)
JP (1) JP5217800B2 (pt)
KR (10) KR102294486B1 (pt)
CN (4) CN105576091B (pt)
BR (1) BRPI0918071B1 (pt)
DE (1) DE202009019173U1 (pt)
TW (6) TWI525848B (pt)
WO (1) WO2010026716A1 (pt)

Families Citing this family (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5217800B2 (ja) 2008-09-03 2013-06-19 日亜化学工業株式会社 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法
DE102009032253B4 (de) * 2009-07-08 2022-11-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektronisches Bauteil
KR101186648B1 (ko) * 2009-12-21 2012-09-28 서울반도체 주식회사 Ｌｅｄ 패키지 및 그의 제조 방법
TWI557933B (zh) 2010-03-30 2016-11-11 Dainippon Printing Co Ltd A manufacturing method of a wire frame or a substrate for a light emitting diode, a semiconductor device, and a wire frame or a substrate for a light emitting diode
JP5844252B2 (ja) 2010-04-02 2016-01-13 株式会社カネカ 硬化性樹脂組成物、硬化性樹脂組成物タブレット、成形体、半導体のパッケージ、半導体部品及び発光ダイオード
DE102010029368A1 (de) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Elektronische Anordnung und Verfahren zum Herstellen einer elektronischen Anordnung
JP5721969B2 (ja) * 2010-06-11 2015-05-20 日東電工株式会社 光半導体装置のリフレクタ用エポキシ樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置
JP5871174B2 (ja) * 2010-07-16 2016-03-01 大日本印刷株式会社 Ｌｅｄ用リードフレームまたは基板、半導体装置、およびｌｅｄ用リードフレームまたは基板の製造方法
WO2012029911A1 (ja) 2010-09-03 2012-03-08 日亜化学工業株式会社 発光装置及びその製造方法
WO2012029912A1 (ja) 2010-09-03 2012-03-08 日亜化学工業株式会社 発光装置、及び発光装置用パッケージアレイ
WO2012029910A1 (ja) 2010-09-03 2012-03-08 日亜化学工業株式会社 発光装置、回路基板、発光装置用パッケージアレイ、及び発光装置用パッケージアレイの製造方法
JP2012069885A (ja) * 2010-09-27 2012-04-05 Sanken Electric Co Ltd 発光ダイオードの製造方法、発光ダイオード
CN102598326B (zh) * 2010-10-22 2013-02-13 松下电器产业株式会社 Led反射器用不饱和聚酯树脂组合物以及使用其的led反射器、led照明器具
CN103190008B (zh) 2010-11-02 2016-07-06 大日本印刷株式会社 Led元件搭载用引线框、附有树脂引线框、半导体装置的制造方法及半导体元件搭载用引线框
KR101851818B1 (ko) 2010-11-11 2018-06-04 니치아 카가쿠 고교 가부시키가이샤 발광 장치와 회로 기판의 제조 방법
JP2014038876A (ja) * 2010-12-15 2014-02-27 Panasonic Corp 半導体発光装置
JP5733743B2 (ja) * 2010-12-15 2015-06-10 日東電工株式会社 光半導体装置
JP5743184B2 (ja) * 2011-01-12 2015-07-01 大日本印刷株式会社 半導体装置およびその製造方法ならびに照明装置
TW201250964A (en) * 2011-01-27 2012-12-16 Dainippon Printing Co Ltd Resin-attached lead frame, method for manufacturing same, and lead frame
US9112120B2 (en) * 2011-02-09 2015-08-18 Kabushiki Kaisha Toshiba White light source and white light source system including the same
WO2012108356A1 (ja) * 2011-02-10 2012-08-16 日亜化学工業株式会社 発光装置、発光装置の製造方法、及びパッケージアレイ
JP5834467B2 (ja) * 2011-04-27 2015-12-24 日亜化学工業株式会社 発光装置
DE102011075032A1 (de) * 2011-04-29 2012-10-31 Osram Ag Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung
KR101092015B1 (ko) * 2011-05-03 2011-12-08 주식회사 네패스신소재 열경화형 광반사용 수지 조성물, 이의 제조 방법, 이로부터 제조된 광반도체 소자 탑재용 반사판, 및 이를 포함하는 광반도체 장치
CN105820315A (zh) * 2011-05-18 2016-08-03 纳沛斯新素材 热固型光反射用树脂组合物及其制备方法、光半导体元件搭载用反射板及光半导体装置
CN102800783A (zh) * 2011-05-25 2012-11-28 宏齐科技股份有限公司 具有对称反射框架的发光二极管封装结构及其制作方法
JP5753446B2 (ja) * 2011-06-17 2015-07-22 株式会社東芝 半導体発光装置の製造方法
US8878215B2 (en) * 2011-06-22 2014-11-04 Lg Innotek Co., Ltd. Light emitting device module
JP5527286B2 (ja) * 2011-06-29 2014-06-18 豊田合成株式会社 発光装置
JP2013038254A (ja) * 2011-08-09 2013-02-21 Fusheng Industrial Co Ltd 発光ダイオードの熱硬化性樹脂フレームの製造方法
JP5893868B2 (ja) 2011-08-12 2016-03-23 シャープ株式会社 発光装置
JP2013041950A (ja) * 2011-08-12 2013-02-28 Sharp Corp 発光装置
TWI426628B (zh) * 2011-08-30 2014-02-11 Fusheng Electronics Corp 發光二極體的支架結構及其製作方法(一)
JP5505735B2 (ja) * 2011-09-22 2014-05-28 復盛精密工業股▲ふん▼有限公司 発光ダイオードの支持フレーム構造およびその製作方法（二）
US8796052B2 (en) * 2012-02-24 2014-08-05 Intersil Americas LLC Optoelectronic apparatuses with post-molded reflector cups and methods for manufacturing the same
CN103325889A (zh) * 2012-03-19 2013-09-25 展晶科技(深圳)有限公司 发光二极管封装方法
TWI488341B (zh) * 2012-04-11 2015-06-11 Lite On Electronics Guangzhou 連板料片、發光二極體封裝品及發光二極體燈條
CN103367344B (zh) * 2012-04-11 2016-04-27 光宝电子(广州)有限公司 连板料片、发光二极管封装品及发光二极管灯条
TWI447961B (zh) * 2012-04-16 2014-08-01 Lextar Electronics Corp 發光二極體封裝體
CN103378226A (zh) * 2012-04-25 2013-10-30 展晶科技(深圳)有限公司 发光二极管的制造方法
CN103378265A (zh) * 2012-04-28 2013-10-30 展晶科技(深圳)有限公司 发光模组载板的制造方法
JP2013239540A (ja) * 2012-05-14 2013-11-28 Shin Etsu Chem Co Ltd 光半導体装置用基板とその製造方法、及び光半導体装置とその製造方法
TWI497779B (zh) * 2012-07-11 2015-08-21 Fusheng Electronics Corp 發光二極體的支架結構製作方法（三）
KR20140020446A (ko) * 2012-08-08 2014-02-19 삼성디스플레이 주식회사 백라이트 어셈블리 및 이를 갖는 표시 장치
JP2014060343A (ja) * 2012-09-19 2014-04-03 Sanken Electric Co Ltd 発光ダイオードの製造方法、発光ダイオード
DE102012109139A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, Elektronische Baugruppe, Verfahren zum Herstellen von Gehäusen und Verfahren zum Herstellen elektronischer Baugruppen
NL2010379C2 (nl) 2013-03-01 2014-09-03 Besi Netherlands B V Mal, drager met te omhullen elektronische componenten, drager met omhulde elektronische componenten, gesepareerd omhulde elektronisch component en werkwijze voor het omhullen van elektronische componenten.
JP6131664B2 (ja) 2013-03-25 2017-05-24 日亜化学工業株式会社 発光装置の製造方法および発光装置
DE102013206963A1 (de) 2013-04-17 2014-11-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP2014216622A (ja) * 2013-04-30 2014-11-17 日亜化学工業株式会社 発光装置の製造方法
US8999737B2 (en) 2013-08-27 2015-04-07 Glo Ab Method of making molded LED package
TW201517323A (zh) 2013-08-27 2015-05-01 Glo Ab 模製發光二極體封裝及其製造方法
US9142745B2 (en) 2013-08-27 2015-09-22 Glo Ab Packaged LED device with castellations
CN104681690A (zh) * 2013-12-03 2015-06-03 复盛精密工业股份有限公司 侧向型发光二极管的支架结构
JP6237174B2 (ja) 2013-12-05 2017-11-29 日亜化学工業株式会社 発光装置
DE102013225552A1 (de) * 2013-12-11 2015-06-11 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
EP3092668B1 (en) * 2014-01-08 2021-03-31 Lumileds LLC Light emitting diode package and method for manufacturing the same
JP6392654B2 (ja) * 2014-02-04 2018-09-19 エイブリック株式会社 光センサ装置
DE102014103942B4 (de) * 2014-03-21 2024-05-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Gehäuses für ein elektronisches Bauelement und eines elektronischen Bauelements, Gehäuse für ein elektronisches Bauelement und elektronisches Bauelement
JP6410083B2 (ja) * 2014-07-31 2018-10-24 シーシーエス株式会社 Ｌｅｄ実装用基板、ｌｅｄ
KR20160028014A (ko) 2014-09-02 2016-03-11 삼성전자주식회사 반도체 소자 패키지 제조방법
JP6477328B2 (ja) * 2014-09-29 2019-03-06 日亜化学工業株式会社 パッケージの製造方法及び発光装置の製造方法、並びにパッケージ及び発光装置
EP3511147B1 (en) 2014-09-29 2020-11-11 Nichia Corporation Method for manufacturing package, method for manufacturing light emitting device, package and light emitting device
DE102014116133B4 (de) 2014-11-05 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Verfahren zum Herstellen eines optoelektronischen Bauelements und Verfahren zum Herstellen einer optoelektronischen Anordnung
JP6458471B2 (ja) * 2014-12-04 2019-01-30 株式会社カネカ 発光素子実装用リードフレーム、これを用いた発光素子実装用樹脂成型体及び表面実装型発光装置
JP6428245B2 (ja) * 2014-12-19 2018-11-28 日亜化学工業株式会社 発光装置
JP2015159324A (ja) * 2015-04-30 2015-09-03 大日本印刷株式会社 リフレクタ付きｌｅｄ用リードフレーム及びそれを用いた半導体装置の製造方法
JP2015149509A (ja) * 2015-05-11 2015-08-20 大日本印刷株式会社 半導体装置およびその製造方法ならびに照明装置
WO2016188566A1 (en) * 2015-05-26 2016-12-01 Osram Opto Semiconductors Gmbh Optoelectronic package device and method for producing the same
JP2015195389A (ja) * 2015-06-17 2015-11-05 大日本印刷株式会社 半導体装置およびその製造方法
JP2017027991A (ja) * 2015-07-16 2017-02-02 大日本印刷株式会社 樹脂付きリードフレーム、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体、樹脂付きリードフレーム用金型
JP6135721B2 (ja) * 2015-08-10 2017-05-31 大日本印刷株式会社 樹脂付リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法
TWI587548B (zh) * 2015-09-07 2017-06-11 隆達電子股份有限公司 發光二極體封裝件
DE102015115824A1 (de) * 2015-09-18 2017-03-23 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US10366948B2 (en) * 2016-03-17 2019-07-30 Rohm Co., Ltd. Semiconductor device and method for manufacturing the same
CN109219623B (zh) * 2016-05-31 2021-09-03 三菱瓦斯化学株式会社 树脂组合物、层叠体、带树脂组合物层的半导体晶圆、带树脂组合物层的半导体搭载用基板和半导体装置
JP6724634B2 (ja) * 2016-07-28 2020-07-15 日亜化学工業株式会社 発光装置の製造方法
JP6837314B2 (ja) * 2016-11-01 2021-03-03 旭化成エレクトロニクス株式会社 半導体装置
US11049849B2 (en) 2016-12-13 2021-06-29 Lumileds Llc Arrangement of LEDs on a leadframe
TWI629431B (zh) * 2017-02-17 2018-07-11 隆達電子股份有限公司 框架、應用其的發光裝置以及應用其的發光裝置的製作方法
US9991194B1 (en) * 2017-04-18 2018-06-05 Ubotic Company Limited Sensor package and method of manufacture
CN106935694A (zh) * 2017-04-20 2017-07-07 江苏稳润光电科技有限公司 一种csp led封装方法
CN106887505B (zh) * 2017-04-24 2019-07-16 芜湖聚飞光电科技有限公司 一种单面发光芯片级led的制作方法
US10153416B1 (en) 2017-05-23 2018-12-11 Radiant Choice Limited Package body and light emitting device using same
US10270020B2 (en) 2017-06-20 2019-04-23 Lextar Electronics Corporation LED package structure
JP7248379B2 (ja) * 2017-07-24 2023-03-29 日亜化学工業株式会社 発光装置及びその製造方法
US10892211B2 (en) * 2017-08-09 2021-01-12 Semtech Corporation Side-solderable leadless package
JP6909976B2 (ja) * 2017-09-07 2021-07-28 日亜化学工業株式会社 発光装置
JP6637003B2 (ja) * 2017-09-08 2020-01-29 サンコール株式会社 バスバーアッセンブリ
JP6879172B2 (ja) * 2017-11-10 2021-06-02 日亜化学工業株式会社 発光装置
DE102017128457A1 (de) * 2017-11-30 2019-06-06 Osram Opto Semiconductors Gmbh Herstellung optoelektronischer bauelemente
US10862015B2 (en) 2018-03-08 2020-12-08 Samsung Electronics., Ltd. Semiconductor light emitting device package
JP6879262B2 (ja) 2018-05-08 2021-06-02 日亜化学工業株式会社 発光装置
CN110233199A (zh) * 2018-08-31 2019-09-13 深圳市聚飞光电股份有限公司 Led支架及其制作方法、led发光器件、发光装置
CN112586098B (zh) * 2018-09-28 2021-09-21 三井金属矿业株式会社 多层布线板的制造方法
US11056615B2 (en) 2018-09-28 2021-07-06 Nichia Corporation Method for manufacturing light emitting module with concave surface light guide plate
JP6717361B2 (ja) * 2018-11-27 2020-07-01 日亜化学工業株式会社 発光装置及びその製造方法
US10971650B2 (en) 2019-07-29 2021-04-06 Lextar Electronics Corporation Light emitting device
US11152540B2 (en) 2019-07-29 2021-10-19 Lextar Electronics Corporation Light emitting diode structure and method of manufacturing thereof
CN112445024B (zh) * 2019-09-03 2024-03-22 纬联电子科技(中山)有限公司 显示器及其背光模块与灯源支架
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
JP7348521B2 (ja) 2019-12-24 2023-09-21 日亜化学工業株式会社 発光装置
EP3848981A1 (en) * 2020-01-10 2021-07-14 Lumileds Holding B.V. Led module, mold and method for manufacturing the same
JP7396057B2 (ja) 2020-01-14 2023-12-12 オムロン株式会社 スイッチの製造方法及び光学ユニットの製造方法
DE102020107409B4 (de) * 2020-03-18 2023-11-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gehäuse für ein optoelektronisches halbleiterbauelement und optoelektronisches halbleiterbauelement
CN113745389A (zh) 2020-05-29 2021-12-03 日亚化学工业株式会社 发光装置
US20210399041A1 (en) * 2020-06-18 2021-12-23 Seoul Semiconductor Co., Ltd. Light emitting module having a plurality of unit pixels, method of fabricating the same, and displaying apparatus having the same
WO2022027470A1 (zh) * 2020-08-06 2022-02-10 深圳市汇顶科技股份有限公司 一种芯片及芯片封装方法、电子设备
CN112248359A (zh) * 2020-09-28 2021-01-22 徐君东 一种定向反光膜的制作工艺
TWI765569B (zh) * 2021-02-08 2022-05-21 健策精密工業股份有限公司 導線架結構及其製造方法
JP2022168726A (ja) 2021-04-26 2022-11-08 日亜化学工業株式会社 発光装置、灯具及び街路灯
WO2022230223A1 (ja) 2021-04-26 2022-11-03 日亜化学工業株式会社 発光装置、灯具及び街路灯
JP2022168725A (ja) 2021-04-26 2022-11-08 日亜化学工業株式会社 発光装置、灯具及び街路灯
WO2022249513A1 (ja) 2021-05-26 2022-12-01 日亜化学工業株式会社 酸化物蛍光体、発光装置及び酸化物蛍光体の製造方法
JP7492142B2 (ja) 2021-07-01 2024-05-29 日亜化学工業株式会社 発光装置、灯具及び照明器具
JP2023046654A (ja) 2021-09-24 2023-04-05 スタンレー電気株式会社 発光装置及び発光装置の製造方法
JP2023072239A (ja) 2021-11-12 2023-05-24 スタンレー電気株式会社 発光装置及びリードフレーム
JP2023080391A (ja) 2021-11-30 2023-06-09 日亜化学工業株式会社 酸化物蛍光体及び発光装置
JP2023082632A (ja) 2021-12-02 2023-06-14 スタンレー電気株式会社 半導体発光装置
US20230335691A1 (en) * 2021-12-26 2023-10-19 Seoul Viosys Co., Ltd. Light emitting module and display apparatus having the same
EP4339509A1 (en) 2022-09-15 2024-03-20 Nichia Corporation Vehicle light-emitting device and vehicle lighting device

Family Cites Families (162)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469068A (en) 1977-11-14 1979-06-02 Hitachi Ltd Semiconductor device and its manufacture
JPS60262476A (ja) 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd 発光素子
JP3088193B2 (ja) 1992-06-05 2000-09-18 三菱電機株式会社 Ｌｏｃ構造を有する半導体装置の製造方法並びにこれに使用するリードフレーム
KR0128251Y1 (ko) 1992-08-21 1998-10-15 문정환 리드 노출형 반도체 조립장치
US5302849A (en) 1993-03-01 1994-04-12 Motorola, Inc. Plastic and grid array semiconductor device and method for making the same
SG68542A1 (en) * 1993-06-04 1999-11-16 Seiko Epson Corp Semiconductor device and manufacturing method thereof
JPH0799345A (ja) 1993-09-28 1995-04-11 Nichia Chem Ind Ltd 発光ダイオード
JPH0837252A (ja) 1994-07-22 1996-02-06 Nec Corp 半導体装置
KR100244853B1 (ko) 1996-12-31 2000-02-15 구자홍 가변형 광원과 그를 이용한 이종 광디스크용광픽업 장치
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
TW467401U (en) 1997-03-21 2001-12-01 Rohm Co Ltd Lead frame and the semiconductor device utilizing the lead frame
EP0936683A4 (en) 1997-06-27 2000-11-22 Iwasaki Electric Co Ltd REFLECTIVE LIGHT-EMITTING DIODE
JP3165078B2 (ja) 1997-07-24 2001-05-14 協和化成株式会社 表面実装部品の製造方法
JP3472450B2 (ja) 1997-09-04 2003-12-02 シャープ株式会社 発光装置
JPH11145523A (ja) 1997-11-05 1999-05-28 Matsushita Electron Corp 半導体発光装置
JP3877402B2 (ja) 1997-11-28 2007-02-07 三洋電機株式会社 半導体装置の製造方法
JP3831504B2 (ja) 1997-12-25 2006-10-11 三洋電機株式会社 リードフレーム
JP3877410B2 (ja) * 1997-12-26 2007-02-07 三洋電機株式会社 半導体装置の製造方法
JPH11220170A (ja) 1998-01-29 1999-08-10 Rohm Co Ltd 発光ダイオード素子
JPH11214754A (ja) * 1998-01-28 1999-08-06 Rohm Co Ltd 半導体発光装置
US6184544B1 (en) 1998-01-29 2001-02-06 Rohm Co., Ltd. Semiconductor light emitting device with light reflective current diffusion layer
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
JP4065051B2 (ja) * 1998-04-17 2008-03-19 スタンレー電気株式会社 表面実装ｌｅｄとその製造方法
US6498099B1 (en) 1998-06-10 2002-12-24 Asat Ltd. Leadless plastic chip carrier with etch back pad singulation
JP2000156435A (ja) 1998-06-22 2000-06-06 Fujitsu Ltd 半導体装置及びその製造方法
US6143981A (en) 1998-06-24 2000-11-07 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
US7332375B1 (en) 1998-06-24 2008-02-19 Amkor Technology, Inc. Method of making an integrated circuit package
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP3667125B2 (ja) 1998-12-07 2005-07-06 日亜化学工業株式会社 光半導体装置とその製造方法
JP3217322B2 (ja) * 1999-02-18 2001-10-09 日亜化学工業株式会社 チップ部品型発光素子
JP3795248B2 (ja) 1999-03-19 2006-07-12 ローム株式会社 チップ型発光装置
EP1107321A4 (en) 1999-06-23 2006-08-30 Citizen Electronics LIGHT-EMITTING DIODE
JP4390317B2 (ja) 1999-07-02 2009-12-24 株式会社ルネサステクノロジ 樹脂封止型半導体パッケージ
JP4183859B2 (ja) 1999-09-02 2008-11-19 株式会社アドバンテスト 半導体基板試験装置
JP2001077235A (ja) 1999-09-06 2001-03-23 Mitsui High Tec Inc 半導体素子搭載用基板
US6320251B1 (en) 2000-01-18 2001-11-20 Amkor Technology, Inc. Stackable package for an integrated circuit
JP3420153B2 (ja) 2000-01-24 2003-06-23 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP3429246B2 (ja) 2000-03-21 2003-07-22 株式会社三井ハイテック リードフレームパターン及びこれを用いた半導体装置の製造方法
JP2001326295A (ja) 2000-05-15 2001-11-22 Rohm Co Ltd 半導体装置および半導体装置製造用フレーム
TW511401B (en) * 2000-09-04 2002-11-21 Sanyo Electric Co Method for manufacturing circuit device
JP4523138B2 (ja) * 2000-10-06 2010-08-11 ローム株式会社 半導体装置およびそれに用いるリードフレーム
KR100371567B1 (ko) 2000-12-08 2003-02-07 삼성테크윈 주식회사 Ａｇ 선도금을 이용한 반도체 패키지용 리드프레임
US6424024B1 (en) 2001-01-23 2002-07-23 Siliconware Precision Industries Co., Ltd. Leadframe of quad flat non-leaded package
US6627482B2 (en) * 2001-02-09 2003-09-30 Harvatek Corporation Mass production technique for surface mount optical device with a focusing cup
JP4505849B2 (ja) * 2001-03-28 2010-07-21 住友電気工業株式会社 光通信モジュールの製造方法
JP2002314138A (ja) 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
DE10117889A1 (de) 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
JP4034073B2 (ja) 2001-05-11 2008-01-16 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3844196B2 (ja) 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JP2003023134A (ja) 2001-07-09 2003-01-24 Hitachi Ltd 半導体装置およびその製造方法
JP4672201B2 (ja) 2001-07-26 2011-04-20 ローム株式会社 半導体装置の製造方法
US6624007B2 (en) 2001-07-26 2003-09-23 Rohm Co., Ltd. Method of making leadframe by mechanical processing
JP2003110145A (ja) 2001-09-27 2003-04-11 Harvatek Corp 発光ダイオード用の翼形表面実装パッケージ
CA2358379A1 (en) 2001-10-05 2003-04-05 Elysium Broadband Inc. Method and device for preventing signal loss in unterminated bridge taps
DE10153259A1 (de) 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2003152296A (ja) 2001-11-15 2003-05-23 Shin Kobe Electric Mach Co Ltd Ｌｅｄ搭載プリント配線板
JP4009097B2 (ja) 2001-12-07 2007-11-14 日立電線株式会社 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム
JP3939554B2 (ja) 2002-01-15 2007-07-04 シャープ株式会社 半導体用リードフレーム
JP2003218398A (ja) 2002-01-18 2003-07-31 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
JP2003304000A (ja) 2002-04-08 2003-10-24 Citizen Electronics Co Ltd 発光ダイオード用パッケージの製造方法
US7799611B2 (en) 2002-04-29 2010-09-21 Unisem (Mauritius) Holdings Limited Partially patterned lead frames and methods of making and using the same in semiconductor packaging
TW546799B (en) 2002-06-26 2003-08-11 Lingsen Precision Ind Ltd Packaged formation method of LED and product structure
WO2004015769A1 (de) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines elektrischen leiterrahmens, verfahren zum herstellen eines oberflächenmontierbaren halbleiterbauelements und leiterrahmenstreifen
DE10237084A1 (de) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements
TWI292961B (en) 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
JP4059293B2 (ja) 2002-09-05 2008-03-12 日亜化学工業株式会社 発光装置
US6879040B2 (en) 2002-09-18 2005-04-12 Agilent Technologies, Inc. Surface mountable electronic device
JP4280050B2 (ja) 2002-10-07 2009-06-17 シチズン電子株式会社 白色発光装置
JP3666594B2 (ja) 2002-10-17 2005-06-29 ローム株式会社 パッケージ型電子部品におけるリード端子の切断方法
US7692206B2 (en) 2002-12-06 2010-04-06 Cree, Inc. Composite leadframe LED package and method of making the same
FR2849158B1 (fr) * 2002-12-20 2005-12-09 Valeo Vision Module d'eclairage pour projecteur de vehicule
JP3910171B2 (ja) 2003-02-18 2007-04-25 シャープ株式会社 半導体発光装置、その製造方法および電子撮像装置
JP2006313943A (ja) * 2003-02-18 2006-11-16 Sharp Corp 半導体発光装置、その製造方法および電子撮像装置
JP4341951B2 (ja) 2003-05-07 2009-10-14 シチズン電子株式会社 発光ダイオード及びそのパッケージ構造
US20050133808A1 (en) 2003-09-11 2005-06-23 Kyocera Corporation Package for housing light-emitting element, light-emitting apparatus and illumination apparatus
US7157744B2 (en) * 2003-10-29 2007-01-02 M/A-Com, Inc. Surface mount package for a high power light emitting diode
US7183588B2 (en) 2004-01-08 2007-02-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emission device
JP3877732B2 (ja) * 2004-02-26 2007-02-07 松下電器産業株式会社 リードフレームおよびそれを用いた半導体装置およびその半導体装置の製造方法
US20050211991A1 (en) 2004-03-26 2005-09-29 Kyocera Corporation Light-emitting apparatus and illuminating apparatus
JP2005306952A (ja) 2004-04-20 2005-11-04 Japan Epoxy Resin Kk 発光素子封止材用エポキシ樹脂組成物
JP4635471B2 (ja) 2004-04-22 2011-02-23 ソニー株式会社 半導体装置及びその製造方法、半導体装置の実装構造並びにリードフレーム
JP2005317661A (ja) 2004-04-27 2005-11-10 Sharp Corp 半導体発光装置およびその製造方法
JP2005322804A (ja) 2004-05-10 2005-11-17 Nitto Denko Corp 光半導体装置
US7456499B2 (en) 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
JP4359195B2 (ja) 2004-06-11 2009-11-04 株式会社東芝 半導体発光装置及びその製造方法並びに半導体発光ユニット
JP2006049442A (ja) 2004-08-02 2006-02-16 Sharp Corp 半導体発光装置およびその製造方法
JP4593201B2 (ja) 2004-08-20 2010-12-08 日立化成工業株式会社 チップ部品型発光装置及びそのための配線基板
KR200373718Y1 (ko) 2004-09-20 2005-01-21 주식회사 티씨오 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드
US8154190B2 (en) 2004-09-22 2012-04-10 Kabushiki Kaisha Toshiba Light emitting device with resin layer containing blue, green and red emitting phosphors which emits white light when excited by ultraviolet light
US8816369B2 (en) * 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
JP5060707B2 (ja) 2004-11-10 2012-10-31 日立化成工業株式会社 光反射用熱硬化性樹脂組成物
JP4329678B2 (ja) 2004-11-11 2009-09-09 株式会社デンソー 半導体装置に用いるリードフレームの製造方法
JP4608294B2 (ja) 2004-11-30 2011-01-12 日亜化学工業株式会社 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
KR100638721B1 (ko) 2005-01-28 2006-10-30 삼성전기주식회사 수지 흐름 개선용 리드 프레임 구조를 갖는 측면형발광다이오드 패키지
JP2006278427A (ja) 2005-03-28 2006-10-12 Matsushita Electric Works Ltd 光結合素子およびそれに用いるリードフレームならびに光結合素子の製造方法
JP4857594B2 (ja) 2005-04-26 2012-01-18 大日本印刷株式会社 回路部材、及び回路部材の製造方法
JP2006324410A (ja) 2005-05-18 2006-11-30 Showa Denko Kk 発光ダイオード封止材用樹脂組成物
EP1884335A4 (en) * 2005-05-24 2010-01-13 Murata Manufacturing Co METHOD AND DEVICE FOR PRODUCING INSERTED PART
KR100593945B1 (ko) 2005-05-30 2006-06-30 삼성전기주식회사 고출력 ｌｅｄ 패키지 및 그 제조방법
KR100638868B1 (ko) 2005-06-20 2006-10-27 삼성전기주식회사 금속 반사 층을 형성한 엘이디 패키지 및 그 제조 방법
JP2007005722A (ja) 2005-06-27 2007-01-11 Toshiba Corp 光半導体素子用外囲器およびそれを用いた光半導体装置
JP5392805B2 (ja) 2005-06-28 2014-01-22 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン樹脂組成物および光学部材
JP4739842B2 (ja) 2005-07-25 2011-08-03 スタンレー電気株式会社 表面実装型ｌｅｄ
JP5422121B2 (ja) 2005-08-04 2014-02-19 日亜化学工業株式会社 発光装置及びその製造方法並びに成形体及び封止部材
JP4857709B2 (ja) * 2005-10-25 2012-01-18 日亜化学工業株式会社 発光装置
TWI271835B (en) 2005-11-07 2007-01-21 High Power Lighting Corp Packaging structure of high power LED chip and method of manufacturing the same
JP2007134376A (ja) 2005-11-08 2007-05-31 Akita Denshi Systems:Kk 発光ダイオード装置及びその製造方法
KR100637476B1 (ko) 2005-11-09 2006-10-23 알티전자 주식회사 측면발광 다이오드 및 그 제조방법
US7943431B2 (en) * 2005-12-02 2011-05-17 Unisem (Mauritius) Holdings Limited Leadless semiconductor package and method of manufacture
US20070126020A1 (en) 2005-12-03 2007-06-07 Cheng Lin High-power LED chip packaging structure and fabrication method thereof
KR20080080555A (ko) * 2005-12-28 2008-09-04 가부시끼가이샤 르네사스 테크놀로지 반도체 장치의 제조 방법
JP5232369B2 (ja) * 2006-02-03 2013-07-10 日立化成株式会社 光半導体素子搭載用パッケージ基板の製造方法およびこれを用いた光半導体装置の製造方法
JP2007297601A (ja) 2006-04-06 2007-11-15 Hitachi Chem Co Ltd 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置
KR100735325B1 (ko) 2006-04-17 2007-07-04 삼성전기주식회사 발광다이오드 패키지 및 그 제조방법
KR100775574B1 (ko) 2006-04-20 2007-11-15 알티전자 주식회사 고효율 발광 다이오드 패키지
JP2007294506A (ja) 2006-04-21 2007-11-08 Matsushita Electric Ind Co Ltd 放熱基板とその製造方法及び、これを用いた発光モジュール及び表示装置
WO2007135707A1 (ja) * 2006-05-18 2007-11-29 Nichia Corporation 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
MY152165A (en) * 2006-06-02 2014-08-15 Hitachi Chemical Co Ltd Optical semiconductor element mounting package, and optical semiconductor device using the same
US8044418B2 (en) 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
JP5233186B2 (ja) 2006-07-25 2013-07-10 日立化成株式会社 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置
US8092735B2 (en) * 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
US7763478B2 (en) * 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
KR100773350B1 (ko) 2006-08-29 2007-11-05 삼성전자주식회사 설비의 이상패턴 규명을 위한 기준정보형성방법 및 이를이용한 반도체 제조설비의 모니터링 방법
US7485480B2 (en) 2006-09-21 2009-02-03 Harvatek Corporation Method of manufacturing high power light-emitting device package and structure thereof
JP5298468B2 (ja) * 2006-09-26 2013-09-25 日立化成株式会社 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置
JP5564162B2 (ja) * 2006-09-29 2014-07-30 フューチャー ライト リミテッド ライアビリティ カンパニー 発光ダイオード装置
TWI311824B (en) * 2006-10-02 2009-07-01 Ind Tech Res Inst Light emitting diode package structure
WO2008047933A1 (en) 2006-10-17 2008-04-24 C.I.Kasei Company, Limited Package assembly for upper/lower electrode light-emitting diodes and light-emitting device manufacturing method using same
JP2008108958A (ja) 2006-10-26 2008-05-08 C I Kasei Co Ltd 発光装置および発光装置の製造方法
JP2008103460A (ja) 2006-10-18 2008-05-01 Sony Corp 半導体パッケージ及びその製造方法
WO2008056813A1 (fr) 2006-11-08 2008-05-15 C.I.Kasei Company, Limited Dispositif électroluminescent et son procédé de fabrication
JP5023781B2 (ja) 2006-11-13 2012-09-12 日亜化学工業株式会社 発光装置
WO2008059856A1 (en) * 2006-11-15 2008-05-22 Hitachi Chemical Co., Ltd. Heat curable resin composition for light reflection, process for producing the resin composition, and optical semiconductor element mounting substrate and optical semiconductor device using the resin composition
JP2008130735A (ja) 2006-11-20 2008-06-05 C I Kasei Co Ltd 発光装置の製造方法
JP4961978B2 (ja) 2006-11-30 2012-06-27 日亜化学工業株式会社 発光装置およびその製造方法
US7679099B2 (en) 2006-12-04 2010-03-16 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Low thermal resistance high power LED
WO2008078791A1 (ja) 2006-12-27 2008-07-03 Showa Denko K.K. 発光装置の製造方法
JP5380774B2 (ja) 2006-12-28 2014-01-08 日亜化学工業株式会社 表面実装型側面発光装置及びその製造方法
KR101026914B1 (ko) 2006-12-28 2011-04-04 니치아 카가쿠 고교 가부시키가이샤 발광 장치, 패키지, 발광 장치의 제조 방법, 패키지의 제조방법 및 패키지 제조용 금형
WO2008081794A1 (ja) * 2006-12-28 2008-07-10 Nichia Corporation 発光装置およびその製造方法
JP4872683B2 (ja) 2007-01-29 2012-02-08 株式会社デンソー モールドパッケージの製造方法
JP2008187045A (ja) 2007-01-30 2008-08-14 Matsushita Electric Ind Co Ltd 半導体装置用リードフレームとその製造方法、半導体装置
JP5608955B2 (ja) 2007-02-06 2014-10-22 日亜化学工業株式会社 発光装置及びその製造方法並びに発光装置用成形体
JP5470680B2 (ja) * 2007-02-06 2014-04-16 日亜化学工業株式会社 発光装置及びその製造方法並びに成形体
US20080255283A1 (en) * 2007-02-06 2008-10-16 Takayuki Aoki Thermosetting epoxy resin composition and semiconductor device
JP2008189827A (ja) * 2007-02-06 2008-08-21 Shin Etsu Chem Co Ltd 熱硬化性エポキシ樹脂組成物及び半導体装置
JP4205135B2 (ja) 2007-03-13 2009-01-07 シャープ株式会社 半導体発光装置、半導体発光装置用多連リードフレーム
JP2008262939A (ja) * 2007-04-10 2008-10-30 Matsushita Electric Ind Co Ltd リードフレームおよび封止金型および封止方法
TW200843130A (en) 2007-04-17 2008-11-01 Wen Lin Package structure of a surface-mount high-power light emitting diode chip and method of making the same
JP2007329502A (ja) 2007-08-16 2007-12-20 Toshiba Corp 発光装置
JP4522442B2 (ja) * 2007-08-20 2010-08-11 三菱鉛筆株式会社 衝撃緩和装置付きノック式筆記具
US7968899B2 (en) * 2007-08-27 2011-06-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED light source having improved resistance to thermal cycling
US8716848B2 (en) 2008-03-24 2014-05-06 SemiLEDs Optoelectronics Co., Ltd. LED device with conductive wings and tabs
KR100869376B1 (ko) 2008-05-20 2008-11-19 주식회사 정진넥스텍 발광다이오드 칩 실장용 리드 프레임 어셈블리와 그의 제조방법
JP2010021259A (ja) 2008-07-09 2010-01-28 Toshiba Corp 光半導体装置
JP5217800B2 (ja) 2008-09-03 2013-06-19 日亜化学工業株式会社 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法
US8829685B2 (en) * 2009-03-31 2014-09-09 Semiconductor Components Industries, Llc Circuit device having funnel shaped lead and method for manufacturing the same
EP2421060A1 (en) * 2009-04-13 2012-02-22 Panasonic Electric Works Co., Ltd. Light-emitting diode
JP5383611B2 (ja) * 2010-01-29 2014-01-08 株式会社東芝 Ｌｅｄパッケージ
JP5527450B2 (ja) 2013-03-06 2014-06-18 日亜化学工業株式会社 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法
JP2013145908A (ja) 2013-03-06 2013-07-25 Nichia Chem Ind Ltd 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法

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