JP6879262B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP6879262B2 JP6879262B2 JP2018089676A JP2018089676A JP6879262B2 JP 6879262 B2 JP6879262 B2 JP 6879262B2 JP 2018089676 A JP2018089676 A JP 2018089676A JP 2018089676 A JP2018089676 A JP 2018089676A JP 6879262 B2 JP6879262 B2 JP 6879262B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- groove
- light emitting
- recess
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920005989 resin Polymers 0.000 claims description 95
- 239000011347 resin Substances 0.000 claims description 95
- 235000014676 Phragmites communis Nutrition 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims 1
- 238000005452 bending Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 13
- 229910052709 silver Inorganic materials 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 12
- 230000001070 adhesive effect Effects 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229920002050 silicone resin Polymers 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 102100032047 Alsin Human genes 0.000 description 3
- 101710187109 Alsin Proteins 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910017639 MgSi Inorganic materials 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
図2は、発光装置1の上面図である。図2において隠れている要素(発光素子100、第1〜第5リード10、20、30、40、50)を破線で表している。
図3は、図2におけるA−A断面図である。
図6は、図5におけるB−B断面図である。
第1実施形態と同じ要素については同じ符号を付し、詳細な説明は省略する。
図9は、図8におけるC−C断面図である。
10,110…第1リード
20,120…第2リード
30,130…第3リード
40,140…第4リード
50,150…第5リード
12,22,32,42,52,112,122,132,142,152…溝
13,23,113,114,123,124,133,134,143,144,153,154…凹み部
60…樹脂部、
80,180…パッケージ
100…発光素子
Claims (4)
- 上面に第1の溝を有する第1リードと、上面に第2の溝を有し、前記第1リードと離間した第2リードと、前記第1リードおよび前記第2リードを保持する樹脂部と、を備えるパッケージであって、前記第1リードの上面および前記第2リードの上面が露出する底面を有する凹部を備え、前記第1の溝および前記第2の溝は前記凹部の側壁に埋設される部分に位置するパッケージと、
前記凹部の底面に実装された発光素子と、
を備え、
前記第1リードは、上面視において、前記第1の溝の端部と連続し、前記第2リードに対向する第1側面の一部に隣接する第1凹み部であって、前記第1リードの外縁の角を全て切り欠いた形状である第1凹み部を有し、
前記第2リードは、上面視において、前記第2の溝の端部と連続し、前記第1リードに対向する第2側面の一部に隣接する第2凹み部であって、前記第2リードの外縁の角を全て切り欠いた形状である第2凹み部を有し、
上面視において、前記第1の溝と前記第2の溝との間に、前記第1凹み部と前記第2凹み部とが隣接し、金属部分は設けられず、前記樹脂部の一部が連続して設けられている、発光装置。 - 前記第1リードの前記第1側面と前記第2リードの前記第2側面との離間距離は、前記第1凹み部および前記第2凹み部が設けられている部分が最も長い、請求項1記載の発光装置。
- 前記発光装置は、前記第1リードから前記第2リードに向かう第1方向に交差する第2方向に離間し、前記樹脂部が保持する第3リードをさらに備え、前記第3リードは上面に第3の溝を有し、前記第3リードの前記上面は前記凹部の前記底部に露出し、前記第3の溝は前記凹部の前記側壁に埋設される部分に位置する、請求項1または2に記載の発光装置。
- 前記第1凹み部の幅は、前記第1の溝の幅以上の大きさであり、前記第2凹み部の幅は、前記第2の溝の幅以上の大きさである、請求項1〜3のいずれか1つに記載の発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018089676A JP6879262B2 (ja) | 2018-05-08 | 2018-05-08 | 発光装置 |
US16/396,243 US10854789B2 (en) | 2018-05-08 | 2019-04-26 | Light-emitting device |
US17/078,385 US11309460B2 (en) | 2018-05-08 | 2020-10-23 | Light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018089676A JP6879262B2 (ja) | 2018-05-08 | 2018-05-08 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019197764A JP2019197764A (ja) | 2019-11-14 |
JP6879262B2 true JP6879262B2 (ja) | 2021-06-02 |
Family
ID=68464228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018089676A Active JP6879262B2 (ja) | 2018-05-08 | 2018-05-08 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US10854789B2 (ja) |
JP (1) | JP6879262B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7295437B2 (ja) * | 2019-11-29 | 2023-06-21 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19829197C2 (de) * | 1998-06-30 | 2002-06-20 | Siemens Ag | Strahlungsaussendendes und/oder -empfangendes Bauelement |
JP3895570B2 (ja) * | 2000-12-28 | 2007-03-22 | 株式会社ルネサステクノロジ | 半導体装置 |
WO2008081794A1 (ja) * | 2006-12-28 | 2008-07-10 | Nichia Corporation | 発光装置およびその製造方法 |
KR100998233B1 (ko) * | 2007-12-03 | 2010-12-07 | 서울반도체 주식회사 | 슬림형 led 패키지 |
JP5217800B2 (ja) * | 2008-09-03 | 2013-06-19 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
JP5440010B2 (ja) * | 2008-09-09 | 2014-03-12 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
TW201128812A (en) * | 2009-12-01 | 2011-08-16 | Lg Innotek Co Ltd | Light emitting device |
US8079139B1 (en) * | 2010-08-27 | 2011-12-20 | I-Chiun Precision Industry Co., Ltd. | Method for producing electro-thermal separation type light emitting diode support structure |
US8933548B2 (en) | 2010-11-02 | 2015-01-13 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
WO2012117974A1 (ja) * | 2011-02-28 | 2012-09-07 | 日亜化学工業株式会社 | 発光装置 |
JP2013058739A (ja) * | 2011-08-17 | 2013-03-28 | Dainippon Printing Co Ltd | 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、光半導体装置、および、光半導体装置用リードフレームの製造方法 |
JP6078948B2 (ja) * | 2012-01-20 | 2017-02-15 | 日亜化学工業株式会社 | 発光装置用パッケージ成形体及びそれを用いた発光装置 |
KR101936289B1 (ko) * | 2012-07-17 | 2019-01-08 | 엘지이노텍 주식회사 | 발광 소자 |
JP6019988B2 (ja) * | 2012-09-19 | 2016-11-02 | 大日本印刷株式会社 | 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体 |
JP6167556B2 (ja) * | 2013-02-21 | 2017-07-26 | 大日本印刷株式会社 | リードフレーム、樹脂付きリードフレーム、リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体 |
US9748164B2 (en) | 2013-03-05 | 2017-08-29 | Nichia Corporation | Semiconductor device |
US9548261B2 (en) | 2013-03-05 | 2017-01-17 | Nichia Corporation | Lead frame and semiconductor device |
JP2014199873A (ja) * | 2013-03-29 | 2014-10-23 | 株式会社カネカ | 発光素子実装用リードフレーム、発光素子実装用樹脂成型体及び表面実装型発光装置 |
US9515241B2 (en) | 2013-07-12 | 2016-12-06 | Lite-On Opto Technology (Changzhou) Co., Ltd. | LED structure, metallic frame of LED structure, and carrier module |
JP2015201608A (ja) | 2014-04-10 | 2015-11-12 | 大日本印刷株式会社 | 樹脂付リードフレームおよびその製造方法、ならびにledパッケージおよびその製造方法 |
JP6398563B2 (ja) * | 2014-05-29 | 2018-10-03 | 日亜化学工業株式会社 | 発光装置 |
JP6481349B2 (ja) * | 2014-12-02 | 2019-03-13 | 日亜化学工業株式会社 | パッケージの製造方法及び発光装置の製造方法 |
JP6387824B2 (ja) * | 2014-12-25 | 2018-09-12 | 日亜化学工業株式会社 | パッケージ、発光装置及びそれらの製造方法 |
US9859480B2 (en) * | 2015-08-20 | 2018-01-02 | Nichia Corporation | Light emitting device and method of manufacturing light emitting device |
CN205542862U (zh) | 2015-12-17 | 2016-08-31 | 深圳市万兴锐科技有限公司 | 具有防水功能的led引线框架 |
US11677059B2 (en) * | 2017-04-26 | 2023-06-13 | Samsung Electronics Co., Ltd. | Light-emitting device package including a lead frame |
JP7001814B2 (ja) * | 2017-09-08 | 2022-01-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光部品および発光部品を製造するための方法 |
JP6652117B2 (ja) * | 2017-11-29 | 2020-02-19 | 日亜化学工業株式会社 | 樹脂パッケージおよび発光装置 |
-
2018
- 2018-05-08 JP JP2018089676A patent/JP6879262B2/ja active Active
-
2019
- 2019-04-26 US US16/396,243 patent/US10854789B2/en active Active
-
2020
- 2020-10-23 US US17/078,385 patent/US11309460B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11309460B2 (en) | 2022-04-19 |
US20190348574A1 (en) | 2019-11-14 |
US10854789B2 (en) | 2020-12-01 |
JP2019197764A (ja) | 2019-11-14 |
US20210057613A1 (en) | 2021-02-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11489099B2 (en) | Light-emitting device | |
JP6891797B2 (ja) | ディスプレイ装置 | |
US11664406B2 (en) | Light-emitting device | |
JP2018101753A (ja) | 発光装置 | |
JP6819244B2 (ja) | 発光装置 | |
JP6728764B2 (ja) | 発光装置及びそれを用いた照明装置 | |
JP2019212699A (ja) | 発光装置 | |
JP6879262B2 (ja) | 発光装置 | |
JP6912728B2 (ja) | 発光装置及び光源装置 | |
JP2022056834A (ja) | 発光装置 | |
JP6308286B2 (ja) | 発光装置 | |
JP2009071090A (ja) | 発光装置 | |
JP6920618B2 (ja) | 発光装置 | |
JP7057490B2 (ja) | 発光装置 | |
JP6975916B2 (ja) | 発光装置 | |
JP7157304B2 (ja) | 半導体装置 | |
US11094676B2 (en) | Light emitting device | |
JP7011193B2 (ja) | 発光装置 | |
JP7227482B2 (ja) | 発光装置 | |
JP6809522B2 (ja) | 発光装置 | |
JP6521017B2 (ja) | 発光装置 | |
JP2022105683A (ja) | 発光装置 | |
JP2020161743A (ja) | 発光装置 | |
JP2022181403A (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190531 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200624 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200626 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200817 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201102 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201221 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210330 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210412 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6879262 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |