WO2008081794A1 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
- Publication number
- WO2008081794A1 WO2008081794A1 PCT/JP2007/074892 JP2007074892W WO2008081794A1 WO 2008081794 A1 WO2008081794 A1 WO 2008081794A1 JP 2007074892 W JP2007074892 W JP 2007074892W WO 2008081794 A1 WO2008081794 A1 WO 2008081794A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- emitting device
- emitting element
- section
- resin
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000003822 epoxy resin Substances 0.000 abstract 2
- 229920000647 polyepoxide Polymers 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000001029 thermal curing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
効率よく製造でき、安定した発光特性を長期間維持できる発光装置を提供する。発光装置1は、発光素子10を収容する凹部40aを形成する周辺部40bと凹部40aの底面を形成する底面部40cとを有する第1樹脂成形体40と、発光素子10を被覆する第2樹脂成形体50とを有し、第1樹脂成形体40は、エポキシ樹脂を必須成分とする熱硬化性エポキシ樹脂組成物から構成され、底面部40cが発光素子10およびワイヤ60の配設領域20a,30aを除いてリードフレーム20,30の表面を覆うと共に、底面部40cの厚さがリードフレーム20,30の表面から発光素子10の先端までの厚さよりも薄く形成されている。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07860121.8A EP2109157B1 (en) | 2006-12-28 | 2007-12-26 | Light emitting device and method for manufacturing the same |
US12/521,428 US8093619B2 (en) | 2006-12-28 | 2007-12-26 | Light emitting device |
JP2008552112A JP5168152B2 (ja) | 2006-12-28 | 2007-12-26 | 発光装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006353669 | 2006-12-28 | ||
JP2006-353669 | 2006-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008081794A1 true WO2008081794A1 (ja) | 2008-07-10 |
Family
ID=39588477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/074892 WO2008081794A1 (ja) | 2006-12-28 | 2007-12-26 | 発光装置およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8093619B2 (ja) |
EP (1) | EP2109157B1 (ja) |
JP (1) | JP5168152B2 (ja) |
WO (1) | WO2008081794A1 (ja) |
Cited By (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100030588A (ko) * | 2008-09-09 | 2010-03-18 | 니치아 카가쿠 고교 가부시키가이샤 | 광 반도체 장치 및 그 제조 방법 |
JP2010062272A (ja) * | 2008-09-03 | 2010-03-18 | Nichia Corp | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
JP2010283261A (ja) * | 2009-06-08 | 2010-12-16 | Nichia Corp | 発光装置 |
JP2011014739A (ja) * | 2009-07-02 | 2011-01-20 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
JP2011029420A (ja) * | 2009-07-27 | 2011-02-10 | Nichia Corp | 光半導体装置及びその製造方法 |
JP2011035082A (ja) * | 2009-07-31 | 2011-02-17 | Nichia Corp | 光半導体装置及びその製造方法 |
JP2011109102A (ja) * | 2009-11-17 | 2011-06-02 | Lg Innotek Co Ltd | 発光素子パッケージ |
JP2011119729A (ja) * | 2009-12-01 | 2011-06-16 | Lg Innotek Co Ltd | 発光素子 |
JP2011159837A (ja) * | 2010-02-01 | 2011-08-18 | Apic Yamada Corp | リードフレーム及びledパッケージ用基板 |
WO2011136357A1 (ja) * | 2010-04-30 | 2011-11-03 | ローム株式会社 | Ledモジュール |
WO2011136356A1 (ja) * | 2010-04-30 | 2011-11-03 | ローム株式会社 | Ledモジュール |
US20120001312A1 (en) * | 2010-06-29 | 2012-01-05 | Panasonic Corporation | Package for semiconductor device, method of manufacturing the same and semiconductor device |
US20120001310A1 (en) * | 2010-06-22 | 2012-01-05 | Panasonic Corporation | Package for semiconductor device, and method of manufacturing the same and semiconductor device |
JP2012089638A (ja) * | 2010-10-19 | 2012-05-10 | Kobe Steel Ltd | Led用リードフレーム |
KR101172177B1 (ko) | 2010-08-09 | 2012-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
JP2012195430A (ja) * | 2011-03-16 | 2012-10-11 | Sanken Electric Co Ltd | 発光ダイオード及びその製造方法 |
US8378378B2 (en) | 2009-10-15 | 2013-02-19 | Advanced Optoelectronic Technology, Inc. | Light emitting diode package and method of fabricating the same |
US8519426B2 (en) | 2010-08-09 | 2013-08-27 | Lg Innotek Co., Ltd. | Light emitting device and lighting system having the same |
JP2013172154A (ja) * | 2012-02-21 | 2013-09-02 | Lg Innotek Co Ltd | 発光素子、発光素子製造方法、及びこれを備えた照明システム |
JP2013232635A (ja) * | 2012-04-06 | 2013-11-14 | Nichia Chem Ind Ltd | 発光装置用パッケージ成形体及びそれを用いた発光装置 |
JP2013251422A (ja) * | 2012-06-01 | 2013-12-12 | Apic Yamada Corp | Ledチップ実装用基板、ledパッケージ、金型、並びに、ledチップ実装用基板及びledパッケージの製造方法 |
KR20140061796A (ko) * | 2012-11-14 | 2014-05-22 | 엘지이노텍 주식회사 | 발광 소자 및 이를 이용하는 라이트 유닛 |
US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
JP2014099667A (ja) * | 2014-03-06 | 2014-05-29 | Nichia Chem Ind Ltd | 光半導体装置及びその製造方法 |
US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
TWI450424B (zh) * | 2010-01-29 | 2014-08-21 | Toshiba Kk | 發光二極體封裝體 |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
JP2014199869A (ja) * | 2013-03-29 | 2014-10-23 | 株式会社カネカ | 発光素子実装用リードフレーム、発光素子実装用樹脂成型体及びその製造方法、並びにトランスファ成型用金型 |
US9035439B2 (en) | 2006-03-28 | 2015-05-19 | Cree Huizhou Solid State Lighting Company Limited | Apparatus, system and method for use in mounting electronic elements |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
WO2015097955A1 (ja) * | 2013-12-26 | 2015-07-02 | アピックヤマダ株式会社 | リードフレーム、ledパッケージ用基板、リフレクタ部材、ledパッケージ、発光装置、発光システム、並びに、ledパッケージ用基板及びledパッケージの製造方法 |
JP2015133524A (ja) * | 2015-04-23 | 2015-07-23 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
EP2197052A3 (en) * | 2008-12-15 | 2015-10-07 | Everlight Electronics Co., Ltd. | Light emitting diode package structure |
EP2207212A4 (en) * | 2008-09-01 | 2015-11-11 | Lg Innotek Co Ltd | CAPSULATION FOR A LIGHT-EMITTING COMPONENT |
JP2015207732A (ja) * | 2014-04-23 | 2015-11-19 | 株式会社カネカ | 光半導体装置用樹脂成形体、光半導体パッケージ及び光半導体装置 |
US9257417B2 (en) | 2012-12-29 | 2016-02-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
JP2016029732A (ja) * | 2015-10-09 | 2016-03-03 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
US9281460B2 (en) | 2012-10-31 | 2016-03-08 | Nichia Corporation | Light emitting device package and light emitting device having lead-frames |
JP2016111067A (ja) * | 2014-12-02 | 2016-06-20 | 日亜化学工業株式会社 | パッケージ、発光装置及びそれらの製造方法 |
US9406856B2 (en) | 2013-06-28 | 2016-08-02 | Nichia Corporation | Package for light emitting apparatus and light emitting apparatus including the same |
JP2016149553A (ja) * | 2008-09-09 | 2016-08-18 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
JP2017046014A (ja) * | 2016-12-01 | 2017-03-02 | 日亜化学工業株式会社 | 光半導体装置 |
US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
US9698312B2 (en) | 2013-12-17 | 2017-07-04 | Nichia Corporation | Resin package and light emitting device |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US9722158B2 (en) | 2009-01-14 | 2017-08-01 | Cree Huizhou Solid State Lighting Company Limited | Aligned multiple emitter package |
KR20170122856A (ko) * | 2009-10-29 | 2017-11-06 | 니치아 카가쿠 고교 가부시키가이샤 | 발광장치 및 그 제조방법 |
JP2017201702A (ja) * | 2017-06-21 | 2017-11-09 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
JP2018142724A (ja) * | 2015-12-26 | 2018-09-13 | 日亜化学工業株式会社 | 発光装置ならびに発光装置の製造方法 |
KR101916148B1 (ko) * | 2012-05-24 | 2018-11-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 조명 시스템 |
KR101926531B1 (ko) * | 2012-05-24 | 2018-12-10 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 조명 시스템 |
JP2019033263A (ja) * | 2018-08-30 | 2019-02-28 | 日亜化学工業株式会社 | パッケージ及びそれを用いた発光装置 |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
JP2019062214A (ja) * | 2018-11-27 | 2019-04-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US10403803B2 (en) | 2015-12-26 | 2019-09-03 | Nichia Corporation | Light emitting device and method of manufacturing the light emitting device |
US10424704B2 (en) | 2015-07-16 | 2019-09-24 | Lg Innotek Co., Ltd. | Light-emitting device package |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
WO2021261182A1 (ja) | 2020-06-22 | 2021-12-30 | スタンレー電気株式会社 | 発光装置及び発光装置の製造方法 |
USRE48892E1 (en) | 2015-10-14 | 2022-01-11 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package and lighting apparatus having same |
JP2022125326A (ja) * | 2020-04-09 | 2022-08-26 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
JP7469722B2 (ja) | 2022-07-08 | 2024-04-17 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100736623B1 (ko) | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
US8610143B2 (en) * | 2007-03-12 | 2013-12-17 | Nichia Corporation | High output power light emitting device and package used therefor |
KR100998233B1 (ko) * | 2007-12-03 | 2010-12-07 | 서울반도체 주식회사 | 슬림형 led 패키지 |
KR100888236B1 (ko) * | 2008-11-18 | 2009-03-12 | 서울반도체 주식회사 | 발광 장치 |
TWI426206B (zh) * | 2008-12-25 | 2014-02-11 | Au Optronics Corp | 發光二極體裝置 |
JP5310672B2 (ja) | 2009-10-15 | 2013-10-09 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
EP2365552A3 (en) * | 2010-03-09 | 2015-03-25 | LG Innotek Co., Ltd. | Light emitting device package with a lead frame having a recess |
US7923271B1 (en) * | 2010-03-17 | 2011-04-12 | GEM Weltronics TWN Corporation | Method of assembling multi-layer LED array engine |
US8338851B2 (en) * | 2010-03-17 | 2012-12-25 | GEM Weltronics TWN Corporation | Multi-layer LED array engine |
JP2011204897A (ja) * | 2010-03-25 | 2011-10-13 | Toshiba Lighting & Technology Corp | 発光モジュール |
KR101867106B1 (ko) | 2010-03-30 | 2018-06-12 | 다이니폰 인사츠 가부시키가이샤 | Led용 수지 부착 리드 프레임, 반도체 장치, 반도체 장치의 제조 방법 및 led용 수지 부착 리드 프레임의 제조 방법 |
KR101114719B1 (ko) * | 2010-08-09 | 2012-02-29 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
CN102456802A (zh) * | 2010-10-19 | 2012-05-16 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
KR101778832B1 (ko) | 2010-11-02 | 2017-09-14 | 다이니폰 인사츠 가부시키가이샤 | Led 소자 탑재용 리드 프레임, 수지 부착 리드 프레임, 반도체 장치의 제조 방법 및 반도체 소자 탑재용 리드 프레임 |
DE102010052541A1 (de) * | 2010-11-25 | 2012-05-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
US8316534B2 (en) * | 2011-01-26 | 2012-11-27 | GEM Weltronics TWN Corporation | Method for packaging airtight multi-layer array type LED |
EP2677539B1 (en) * | 2011-02-15 | 2017-07-05 | Panasonic Intellectual Property Management Co., Ltd. | Process for manufacture of a semiconductor device |
DE102011018921B4 (de) * | 2011-04-28 | 2023-05-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Träger, optoelektronisches Bauelement mit Träger und Verfahren zur Herstellung dieser |
CN102956764B (zh) * | 2011-08-31 | 2015-08-12 | 盈胜科技股份有限公司 | 气密型多层式阵列型发光二极管的封装方法 |
JP5902823B2 (ja) * | 2011-11-17 | 2016-04-13 | ルーメンス カンパニー リミテッド | 発光素子パッケージ及びそれを備えるバックライトユニット |
JP5938912B2 (ja) * | 2012-01-13 | 2016-06-22 | 日亜化学工業株式会社 | 発光装置及び照明装置 |
JP6078948B2 (ja) * | 2012-01-20 | 2017-02-15 | 日亜化学工業株式会社 | 発光装置用パッケージ成形体及びそれを用いた発光装置 |
TWM448801U (zh) * | 2012-07-04 | 2013-03-11 | Dow Corning Taiwan Inc | 發光二極體裝置及導線架料片 |
JP6499387B2 (ja) * | 2013-03-05 | 2019-04-10 | 日亜化学工業株式会社 | リードフレーム及び発光装置 |
CN104064655B (zh) * | 2013-03-22 | 2019-02-01 | 光宝电子(广州)有限公司 | Led封装体及其制造方法 |
TWI540769B (zh) * | 2013-05-27 | 2016-07-01 | 億光電子工業股份有限公司 | 承載結構及發光裝置 |
KR102160075B1 (ko) * | 2014-04-22 | 2020-09-25 | 서울반도체 주식회사 | 발광 장치 |
CN104993041B (zh) * | 2015-06-04 | 2019-06-11 | 陈建伟 | 一种led倒装芯片固晶导电粘接结构及其安装方法 |
US11367820B2 (en) * | 2017-09-01 | 2022-06-21 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package and light source device |
KR20190074200A (ko) * | 2017-12-19 | 2019-06-27 | 서울반도체 주식회사 | 발광 다이오드 패키지 및 이를 포함하는 발광 모듈 |
JP6879262B2 (ja) | 2018-05-08 | 2021-06-02 | 日亜化学工業株式会社 | 発光装置 |
WO2020133381A1 (zh) * | 2018-12-29 | 2020-07-02 | 泉州三安半导体科技有限公司 | 一种激光器封装结构 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1145958A (ja) | 1997-07-24 | 1999-02-16 | Kyowa Kasei Kk | 表面実装部品及びその製造方法 |
WO2000002262A1 (de) * | 1998-06-30 | 2000-01-13 | Osram Opto Semiconductors Gmbh & Co. Ohg | Strahlungaussendendes und/oder -empfangendes bauelement |
JP2001177160A (ja) | 1999-10-07 | 2001-06-29 | Denso Corp | 表面実装型発光ダイオード |
JP2003224305A (ja) * | 2001-11-01 | 2003-08-08 | Nichia Chem Ind Ltd | 発光装置及びその形成方法 |
JP2005294736A (ja) | 2004-04-05 | 2005-10-20 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
JP2006156704A (ja) * | 2004-11-30 | 2006-06-15 | Nichia Chem Ind Ltd | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
JP2006339386A (ja) * | 2005-06-01 | 2006-12-14 | Toshiba Corp | 光半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP3632507B2 (ja) * | 1999-07-06 | 2005-03-23 | 日亜化学工業株式会社 | 発光装置 |
JP2002223005A (ja) * | 2001-01-26 | 2002-08-09 | Toyoda Gosei Co Ltd | 発光ダイオード及びディスプレイ装置 |
US6924596B2 (en) | 2001-11-01 | 2005-08-02 | Nichia Corporation | Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same |
DE10213294B4 (de) * | 2002-03-25 | 2015-05-13 | Osram Gmbh | Verwendung eines UV-beständigen Polymers in der Optoelektronik sowie im Außenanwendungsbereich, UV-beständiges Polymer sowie optisches Bauelement |
DE10221857A1 (de) * | 2002-05-16 | 2003-11-27 | Osram Opto Semiconductors Gmbh | Verfahren zum Befestigen eines Halbleiterchips in einem Kunststoffgehäusekörper, optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE10308866A1 (de) * | 2003-02-28 | 2004-09-09 | Osram Opto Semiconductors Gmbh | Beleuchtungsmodul und Verfahren zu dessen Herstellung |
JP4645071B2 (ja) * | 2003-06-20 | 2011-03-09 | 日亜化学工業株式会社 | パッケージ成型体およびそれを用いた半導体装置 |
JP4803339B2 (ja) * | 2003-11-20 | 2011-10-26 | 信越化学工業株式会社 | エポキシ・シリコーン混成樹脂組成物及び発光半導体装置 |
JP4359195B2 (ja) * | 2004-06-11 | 2009-11-04 | 株式会社東芝 | 半導体発光装置及びその製造方法並びに半導体発光ユニット |
DE102004057804B4 (de) * | 2004-11-30 | 2010-04-08 | Osram Opto Semiconductors Gmbh | Gehäusekörper für einen Halbleiterchip aus gegossener Keramik mit reflektierender Wirkung und Verfahren zu dessen Herstellung |
-
2007
- 2007-12-26 JP JP2008552112A patent/JP5168152B2/ja active Active
- 2007-12-26 WO PCT/JP2007/074892 patent/WO2008081794A1/ja active Application Filing
- 2007-12-26 EP EP07860121.8A patent/EP2109157B1/en active Active
- 2007-12-26 US US12/521,428 patent/US8093619B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1145958A (ja) | 1997-07-24 | 1999-02-16 | Kyowa Kasei Kk | 表面実装部品及びその製造方法 |
WO2000002262A1 (de) * | 1998-06-30 | 2000-01-13 | Osram Opto Semiconductors Gmbh & Co. Ohg | Strahlungaussendendes und/oder -empfangendes bauelement |
JP2002520823A (ja) | 1998-06-30 | 2002-07-09 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト | ビーム放射および/または受信素子 |
JP2001177160A (ja) | 1999-10-07 | 2001-06-29 | Denso Corp | 表面実装型発光ダイオード |
JP2003224305A (ja) * | 2001-11-01 | 2003-08-08 | Nichia Chem Ind Ltd | 発光装置及びその形成方法 |
JP2005294736A (ja) | 2004-04-05 | 2005-10-20 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
JP2006156704A (ja) * | 2004-11-30 | 2006-06-15 | Nichia Chem Ind Ltd | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
JP2006339386A (ja) * | 2005-06-01 | 2006-12-14 | Toshiba Corp | 光半導体装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2109157A4 |
Cited By (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9035439B2 (en) | 2006-03-28 | 2015-05-19 | Cree Huizhou Solid State Lighting Company Limited | Apparatus, system and method for use in mounting electronic elements |
US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US11791442B2 (en) | 2007-10-31 | 2023-10-17 | Creeled, Inc. | Light emitting diode package and method for fabricating same |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US10892383B2 (en) | 2007-10-31 | 2021-01-12 | Cree, Inc. | Light emitting diode package and method for fabricating same |
EP2207212A4 (en) * | 2008-09-01 | 2015-11-11 | Lg Innotek Co Ltd | CAPSULATION FOR A LIGHT-EMITTING COMPONENT |
US9490411B2 (en) | 2008-09-03 | 2016-11-08 | Nichia Corporation | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
US10700241B2 (en) | 2008-09-03 | 2020-06-30 | Nichia Corporation | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
US10573788B2 (en) | 2008-09-03 | 2020-02-25 | Nichia Corporation | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
US10573789B2 (en) | 2008-09-03 | 2020-02-25 | Nichia Corporation | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
US9287476B2 (en) | 2008-09-03 | 2016-03-15 | Nichia Corporation | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
US11094854B2 (en) | 2008-09-03 | 2021-08-17 | Nichia Corporation | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
US10115870B2 (en) | 2008-09-03 | 2018-10-30 | Nichia Corporation | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
US9537071B2 (en) | 2008-09-03 | 2017-01-03 | Nichia Corporation | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
JP2010062272A (ja) * | 2008-09-03 | 2010-03-18 | Nichia Corp | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
JP2016149553A (ja) * | 2008-09-09 | 2016-08-18 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
US9773959B2 (en) | 2008-09-09 | 2017-09-26 | Nichia Corporation | Optical-semiconductor device and method for manufacturing the same |
US10164163B2 (en) | 2008-09-09 | 2018-12-25 | Nichia Corporation | Optical-semiconductor device with bottom surface including electrically conductive members and light-blocking base member therebetween, and method for manufacturing the same |
JP2010239105A (ja) * | 2008-09-09 | 2010-10-21 | Nichia Corp | 光半導体装置及びその製造方法 |
US8975100B2 (en) | 2008-09-09 | 2015-03-10 | Nichia Corporation | Optical-semiconductor device and method for manufacturing the same |
KR101624744B1 (ko) * | 2008-09-09 | 2016-06-07 | 니치아 카가쿠 고교 가부시키가이샤 | 광 반도체 장치 및 그 제조 방법 |
US8604507B2 (en) | 2008-09-09 | 2013-12-10 | Nichia Corporation | Optical-semiconductor device and method for manufacturing the same |
KR20100030588A (ko) * | 2008-09-09 | 2010-03-18 | 니치아 카가쿠 고교 가부시키가이샤 | 광 반도체 장치 및 그 제조 방법 |
US11271144B2 (en) | 2008-09-09 | 2022-03-08 | Nichia Corporation | Optical-semiconductor device including a wavelength converting member and method for manufacturing the same |
US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
EP2197052A3 (en) * | 2008-12-15 | 2015-10-07 | Everlight Electronics Co., Ltd. | Light emitting diode package structure |
US9722158B2 (en) | 2009-01-14 | 2017-08-01 | Cree Huizhou Solid State Lighting Company Limited | Aligned multiple emitter package |
JP2010283261A (ja) * | 2009-06-08 | 2010-12-16 | Nichia Corp | 発光装置 |
JP2011014739A (ja) * | 2009-07-02 | 2011-01-20 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
JP2011029420A (ja) * | 2009-07-27 | 2011-02-10 | Nichia Corp | 光半導体装置及びその製造方法 |
JP2011035082A (ja) * | 2009-07-31 | 2011-02-17 | Nichia Corp | 光半導体装置及びその製造方法 |
US8378378B2 (en) | 2009-10-15 | 2013-02-19 | Advanced Optoelectronic Technology, Inc. | Light emitting diode package and method of fabricating the same |
KR101947304B1 (ko) * | 2009-10-29 | 2019-02-12 | 니치아 카가쿠 고교 가부시키가이샤 | 발광장치 및 그 제조방법 |
KR20170122856A (ko) * | 2009-10-29 | 2017-11-06 | 니치아 카가쿠 고교 가부시키가이샤 | 발광장치 및 그 제조방법 |
KR101811885B1 (ko) * | 2009-10-29 | 2017-12-22 | 니치아 카가쿠 고교 가부시키가이샤 | 발광장치 및 그 제조방법 |
JP2011109102A (ja) * | 2009-11-17 | 2011-06-02 | Lg Innotek Co Ltd | 発光素子パッケージ |
US8772816B2 (en) | 2009-12-01 | 2014-07-08 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
US9711702B2 (en) | 2009-12-01 | 2017-07-18 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
US9461223B2 (en) | 2009-12-01 | 2016-10-04 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
US10749092B2 (en) | 2009-12-01 | 2020-08-18 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
US9136453B2 (en) | 2009-12-01 | 2015-09-15 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
US9831409B2 (en) | 2009-12-01 | 2017-11-28 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
US10230036B2 (en) | 2009-12-01 | 2019-03-12 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
US9978921B2 (en) | 2009-12-01 | 2018-05-22 | LG Innotek, Co. Ltd. | Light emitting device and method of manufacturing the same |
US10388840B1 (en) | 2009-12-01 | 2019-08-20 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
JP2011119729A (ja) * | 2009-12-01 | 2011-06-16 | Lg Innotek Co Ltd | 発光素子 |
US10446730B2 (en) | 2009-12-01 | 2019-10-15 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
US9035348B2 (en) | 2009-12-01 | 2015-05-19 | Lg Innotek Co., Ltd. | Light emitting device and method of manufacturing the same |
TWI450424B (zh) * | 2010-01-29 | 2014-08-21 | Toshiba Kk | 發光二極體封裝體 |
JP2011159837A (ja) * | 2010-02-01 | 2011-08-18 | Apic Yamada Corp | リードフレーム及びledパッケージ用基板 |
US20130049058A1 (en) * | 2010-04-30 | 2013-02-28 | Rohm Co., Ltd. | Led module |
WO2011136357A1 (ja) * | 2010-04-30 | 2011-11-03 | ローム株式会社 | Ledモジュール |
WO2011136356A1 (ja) * | 2010-04-30 | 2011-11-03 | ローム株式会社 | Ledモジュール |
JP2011233800A (ja) * | 2010-04-30 | 2011-11-17 | Rohm Co Ltd | 発光素子モジュール |
US20130043501A1 (en) * | 2010-04-30 | 2013-02-21 | Rohm Co., Ltd. | Led module |
US9748448B2 (en) * | 2010-04-30 | 2017-08-29 | Rohm Co., Ltd. | LED module |
US20120001310A1 (en) * | 2010-06-22 | 2012-01-05 | Panasonic Corporation | Package for semiconductor device, and method of manufacturing the same and semiconductor device |
CN102315365A (zh) * | 2010-06-29 | 2012-01-11 | 松下电器产业株式会社 | 半导体装置用封装及其制造方法、以及半导体装置 |
US20120001312A1 (en) * | 2010-06-29 | 2012-01-05 | Panasonic Corporation | Package for semiconductor device, method of manufacturing the same and semiconductor device |
US8519426B2 (en) | 2010-08-09 | 2013-08-27 | Lg Innotek Co., Ltd. | Light emitting device and lighting system having the same |
US9041013B2 (en) | 2010-08-09 | 2015-05-26 | LG Innotek., Ltd. | Light emitting device and lighing system having the same |
KR101172177B1 (ko) | 2010-08-09 | 2012-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
JP2012089638A (ja) * | 2010-10-19 | 2012-05-10 | Kobe Steel Ltd | Led用リードフレーム |
JP2012195430A (ja) * | 2011-03-16 | 2012-10-11 | Sanken Electric Co Ltd | 発光ダイオード及びその製造方法 |
JP2013172154A (ja) * | 2012-02-21 | 2013-09-02 | Lg Innotek Co Ltd | 発光素子、発光素子製造方法、及びこれを備えた照明システム |
JP2013232635A (ja) * | 2012-04-06 | 2013-11-14 | Nichia Chem Ind Ltd | 発光装置用パッケージ成形体及びそれを用いた発光装置 |
US8872218B2 (en) | 2012-04-06 | 2014-10-28 | Nichia Corporation | Molded package and light emitting device |
KR101916148B1 (ko) * | 2012-05-24 | 2018-11-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 조명 시스템 |
KR101926531B1 (ko) * | 2012-05-24 | 2018-12-10 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 조명 시스템 |
JP2013251422A (ja) * | 2012-06-01 | 2013-12-12 | Apic Yamada Corp | Ledチップ実装用基板、ledパッケージ、金型、並びに、ledチップ実装用基板及びledパッケージの製造方法 |
US9281460B2 (en) | 2012-10-31 | 2016-03-08 | Nichia Corporation | Light emitting device package and light emitting device having lead-frames |
KR20140061796A (ko) * | 2012-11-14 | 2014-05-22 | 엘지이노텍 주식회사 | 발광 소자 및 이를 이용하는 라이트 유닛 |
KR102008286B1 (ko) * | 2012-11-14 | 2019-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 이용하는 라이트 유닛 |
USRE47504E1 (en) | 2012-12-29 | 2019-07-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
US9257417B2 (en) | 2012-12-29 | 2016-02-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
JP2014199869A (ja) * | 2013-03-29 | 2014-10-23 | 株式会社カネカ | 発光素子実装用リードフレーム、発光素子実装用樹脂成型体及びその製造方法、並びにトランスファ成型用金型 |
US9991432B2 (en) | 2013-06-28 | 2018-06-05 | Nichia Corporation | Light emitting apparatus |
US9406856B2 (en) | 2013-06-28 | 2016-08-02 | Nichia Corporation | Package for light emitting apparatus and light emitting apparatus including the same |
US10305011B2 (en) | 2013-06-28 | 2019-05-28 | Nichia Corporation | Light emitting apparatus |
US9647190B2 (en) | 2013-06-28 | 2017-05-09 | Nichia Corporation | Package for light emitting apparatus and light emitting apparatus including the same |
US9698312B2 (en) | 2013-12-17 | 2017-07-04 | Nichia Corporation | Resin package and light emitting device |
WO2015097955A1 (ja) * | 2013-12-26 | 2015-07-02 | アピックヤマダ株式会社 | リードフレーム、ledパッケージ用基板、リフレクタ部材、ledパッケージ、発光装置、発光システム、並びに、ledパッケージ用基板及びledパッケージの製造方法 |
JP2014099667A (ja) * | 2014-03-06 | 2014-05-29 | Nichia Chem Ind Ltd | 光半導体装置及びその製造方法 |
JP2015207732A (ja) * | 2014-04-23 | 2015-11-19 | 株式会社カネカ | 光半導体装置用樹脂成形体、光半導体パッケージ及び光半導体装置 |
US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
JP2016111067A (ja) * | 2014-12-02 | 2016-06-20 | 日亜化学工業株式会社 | パッケージ、発光装置及びそれらの製造方法 |
JP2015133524A (ja) * | 2015-04-23 | 2015-07-23 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
US10998476B2 (en) | 2015-07-16 | 2021-05-04 | Lg Innotek Co., Ltd. | Light-emitting device package |
US10424704B2 (en) | 2015-07-16 | 2019-09-24 | Lg Innotek Co., Ltd. | Light-emitting device package |
JP2016029732A (ja) * | 2015-10-09 | 2016-03-03 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
USRE49146E1 (en) | 2015-10-14 | 2022-07-19 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package and lighting apparatus having same |
USRE48892E1 (en) | 2015-10-14 | 2022-01-11 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package and lighting apparatus having same |
JP2018142724A (ja) * | 2015-12-26 | 2018-09-13 | 日亜化学工業株式会社 | 発光装置ならびに発光装置の製造方法 |
US10403803B2 (en) | 2015-12-26 | 2019-09-03 | Nichia Corporation | Light emitting device and method of manufacturing the light emitting device |
JP2017046014A (ja) * | 2016-12-01 | 2017-03-02 | 日亜化学工業株式会社 | 光半導体装置 |
JP2017201702A (ja) * | 2017-06-21 | 2017-11-09 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
JP2019033263A (ja) * | 2018-08-30 | 2019-02-28 | 日亜化学工業株式会社 | パッケージ及びそれを用いた発光装置 |
JP2019062214A (ja) * | 2018-11-27 | 2019-04-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2022125326A (ja) * | 2020-04-09 | 2022-08-26 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
JP7252503B2 (ja) | 2020-04-09 | 2023-04-05 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
WO2021261182A1 (ja) | 2020-06-22 | 2021-12-30 | スタンレー電気株式会社 | 発光装置及び発光装置の製造方法 |
EP4170735A4 (en) * | 2020-06-22 | 2024-06-12 | Stanley Electric Co., Ltd. | LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING A LIGHT-EMITTING DEVICE |
JP7469722B2 (ja) | 2022-07-08 | 2024-04-17 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US8093619B2 (en) | 2012-01-10 |
EP2109157A4 (en) | 2013-12-04 |
EP2109157A1 (en) | 2009-10-14 |
JPWO2008081794A1 (ja) | 2010-04-30 |
JP5168152B2 (ja) | 2013-03-21 |
EP2109157B1 (en) | 2018-11-28 |
US20100314654A1 (en) | 2010-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008081794A1 (ja) | 発光装置およびその製造方法 | |
USD634876S1 (en) | Light tube assembly | |
USD625847S1 (en) | LED module | |
EP2206165B8 (en) | Robust light emitting diode structure with removed substrate and added optical element, method of manufacturing the same | |
USD592786S1 (en) | LED light fixture | |
WO2006135496A3 (en) | Led package | |
EP1949459A4 (en) | METHOD FOR MANUFACTURING A LIGHT EMITTING DEVICE COMPRISING A MOLDED ENCAPSULANT | |
TWI329369B (en) | Light emitting diode employing an array of nanorods and method of fabricating the same | |
WO2007142778A3 (en) | Packaged light emitting devices including multiple index lenses and methods of fabricating the same | |
EP2463923A3 (en) | Light emitting diode package and manufacturing method thereof | |
EP1905103A4 (en) | LUMINOUS DIODE WITH A THERMAL CONDUCTIVE SUBSTRATE AND METHOD OF MANUFACTURING THEREOF | |
TW200715614A (en) | Light-emitting device, method for manufacturing the same, molded body and sealing member | |
TWI256737B (en) | One-block light-emitting device and manufacturing method thereof | |
EP2341541A3 (en) | Image sensor packaging structure with predetermined focal length | |
WO2008076661A3 (en) | Ceramic package substrate with recessed device | |
TW200940874A (en) | Light emitting device | |
EP1953835A4 (en) | LIGHT-EMITTING DEVICE | |
TWI370558B (en) | Light emitting diode and process for fabricating the same | |
EP2819190B8 (en) | Semiconductor light emitting module and method for manufacturing the same | |
WO2010039918A3 (en) | Molded electrical socket | |
PL2030524T3 (pl) | Zgarniacz jednostki kosmetycznej | |
EP1994118A4 (en) | ORGANIC LIGHTING DIODE OF HIGH EFFICIENCY AND MANUFACTURING METHOD THEREFOR | |
TW200733431A (en) | Method of sealing/molding optical element by resin | |
EP2551928A3 (en) | Surface-mount light emitting device | |
EP1900040A4 (en) | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07860121 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008552112 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12521428 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007860121 Country of ref document: EP |