BRPI0909788A2 - método para fabricar um dispositivo emissor de luz, e, dispositivo emissor de luz. - Google Patents

método para fabricar um dispositivo emissor de luz, e, dispositivo emissor de luz.

Info

Publication number
BRPI0909788A2
BRPI0909788A2 BRPI0909788A BRPI0909788A BRPI0909788A2 BR PI0909788 A2 BRPI0909788 A2 BR PI0909788A2 BR PI0909788 A BRPI0909788 A BR PI0909788A BR PI0909788 A BRPI0909788 A BR PI0909788A BR PI0909788 A2 BRPI0909788 A2 BR PI0909788A2
Authority
BR
Brazil
Prior art keywords
light emitting
emitting device
manufacturing
light
emitting
Prior art date
Application number
BRPI0909788A
Other languages
English (en)
Inventor
Dima Simonian
Frederic Diana
Grigoriy Basin
Paul S Martin
Original Assignee
Koninklije Philips Electronics N V
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40677561&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BRPI0909788(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Koninklije Philips Electronics N V, Philips Lumileds Lighting Co filed Critical Koninklije Philips Electronics N V
Publication of BRPI0909788A2 publication Critical patent/BRPI0909788A2/pt
Publication of BRPI0909788B1 publication Critical patent/BRPI0909788B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
BRPI0909788-0A 2008-03-17 2009-03-13 método para fabricar um dispositivo emissor de luz BRPI0909788B1 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/050,082 US20090230409A1 (en) 2008-03-17 2008-03-17 Underfill process for flip-chip leds
PCT/IB2009/051055 WO2009115968A1 (en) 2008-03-17 2009-03-13 Underfill process for flip-chip leds

Publications (2)

Publication Number Publication Date
BRPI0909788A2 true BRPI0909788A2 (pt) 2015-10-06
BRPI0909788B1 BRPI0909788B1 (pt) 2019-11-05

Family

ID=40677561

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0909788-0A BRPI0909788B1 (pt) 2008-03-17 2009-03-13 método para fabricar um dispositivo emissor de luz

Country Status (9)

Country Link
US (2) US20090230409A1 (pt)
EP (1) EP2266149B1 (pt)
JP (1) JP5372133B2 (pt)
KR (1) KR101524004B1 (pt)
CN (1) CN102084505B (pt)
BR (1) BRPI0909788B1 (pt)
RU (1) RU2502157C2 (pt)
TW (1) TWI463701B (pt)
WO (1) WO2009115968A1 (pt)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8405228B2 (en) * 2009-03-25 2013-03-26 Stats Chippac Ltd. Integrated circuit packaging system with package underfill and method of manufacture thereof
US8471280B2 (en) * 2009-11-06 2013-06-25 Koninklijke Philips Electronics N.V. Silicone based reflective underfill and thermal coupler
JP2012019062A (ja) * 2010-07-08 2012-01-26 Shin Etsu Chem Co Ltd 発光半導体装置、実装基板及びそれらの製造方法
US8796075B2 (en) 2011-01-11 2014-08-05 Nordson Corporation Methods for vacuum assisted underfilling
CN102610703A (zh) * 2011-01-20 2012-07-25 陈惠美 光电元件的封装方法
US8952402B2 (en) * 2011-08-26 2015-02-10 Micron Technology, Inc. Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods
US10043960B2 (en) * 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
CN102593317B (zh) * 2011-12-20 2014-12-24 西安炬光科技有限公司 一种高功率高亮度led光源封装结构及其封装方法
CN109994586B (zh) 2012-03-30 2022-06-03 亮锐控股有限公司 密封的半导体发光器件
JP5962285B2 (ja) 2012-07-19 2016-08-03 日亜化学工業株式会社 発光装置およびその製造方法
JP2014179569A (ja) * 2013-03-15 2014-09-25 Nichia Chem Ind Ltd 発光装置およびその製造方法
US9022607B2 (en) 2012-10-18 2015-05-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Leadframe-based surface mount technology segmented display design and method of manufacture
CN105531829B (zh) 2013-09-10 2018-08-14 赫普塔冈微光有限公司 紧凑光电模块以及用于这样的模块的制造方法
CN104600186A (zh) * 2013-10-31 2015-05-06 展晶科技(深圳)有限公司 发光二极管封装体的制造方法
US10056267B2 (en) 2014-02-14 2018-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate design for semiconductor packages and method of forming same
US9653443B2 (en) * 2014-02-14 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal performance structure for semiconductor packages and method of forming same
JP2015220342A (ja) * 2014-05-19 2015-12-07 住友電気工業株式会社 光半導体装置の製造方法及び光半導体装置の製造装置
US11311967B2 (en) * 2014-08-19 2022-04-26 Lumileds Llc Sapphire collector for reducing mechanical damage during die level laser lift-off
CN107924865B (zh) * 2015-05-13 2022-03-11 亮锐控股有限公司 用于减少在管芯水平激光剥离期间机械损伤的蓝宝石收集器
US9831104B1 (en) * 2015-11-06 2017-11-28 Xilinx, Inc. Techniques for molded underfill for integrated circuit dies
CN109314164B (zh) * 2016-05-25 2022-04-15 朱振甫 半导体连续阵列层
DE102017104851A1 (de) 2017-03-08 2018-09-13 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von zumindest einem optoelektronischen Bauelement und optoelektronisches Bauelement
CN108630645A (zh) * 2017-03-17 2018-10-09 永道无线射频标签(扬州)有限公司 一种芯片和天线基材的接合结构及其制备方法
US11024611B1 (en) * 2017-06-09 2021-06-01 Goertek, Inc. Micro-LED array transfer method, manufacturing method and display device
US10672957B2 (en) 2017-07-19 2020-06-02 Cree, Inc. LED apparatuses and methods for high lumen output density
CN107424964A (zh) * 2017-07-27 2017-12-01 武汉市三选科技有限公司 底部填充组成物及使用其之底部填充方法与电子组装组件
JP7266178B2 (ja) * 2017-11-24 2023-04-28 日亜化学工業株式会社 半導体装置の製造方法
KR20190084807A (ko) * 2018-01-09 2019-07-17 서울바이오시스 주식회사 발광 장치
JP7236807B2 (ja) * 2018-01-25 2023-03-10 浜松ホトニクス株式会社 半導体装置、及び半導体装置の製造方法
US10453827B1 (en) 2018-05-30 2019-10-22 Cree, Inc. LED apparatuses and methods
US11101410B2 (en) 2018-05-30 2021-08-24 Creeled, Inc. LED systems, apparatuses, and methods
US20210399041A1 (en) * 2020-06-18 2021-12-23 Seoul Semiconductor Co., Ltd. Light emitting module having a plurality of unit pixels, method of fabricating the same, and displaying apparatus having the same
US20220149246A1 (en) * 2020-11-12 2022-05-12 Seoul Semiconductor Co., Ltd. Light emitting module and method of manufacturing the same and display apparatus having the same
CN113524473B (zh) * 2021-07-09 2023-10-20 苏州晶方半导体科技股份有限公司 光学基板的切割方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6506681B2 (en) * 2000-12-06 2003-01-14 Micron Technology, Inc. Thin flip—chip method
JP2003197680A (ja) * 2001-12-25 2003-07-11 Matsushita Electric Works Ltd 半導体装置の製造方法
US7138293B2 (en) * 2002-10-04 2006-11-21 Dalsa Semiconductor Inc. Wafer level packaging technique for microdevices
US6977396B2 (en) * 2003-02-19 2005-12-20 Lumileds Lighting U.S., Llc High-powered light emitting device with improved thermal properties
RU2267188C2 (ru) * 2003-06-23 2005-12-27 Федорова Галина Владимировна Светодиодное полупроводниковое устройство в корпусе для поверхностного монтажа
JP3876250B2 (ja) * 2003-06-24 2007-01-31 スタンレー電気株式会社 表面実装型半導体電子部品および製造方法
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
JP4608966B2 (ja) * 2004-06-29 2011-01-12 日亜化学工業株式会社 発光装置の製造方法
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7791014B2 (en) * 2005-03-09 2010-09-07 Asahi Kasei Emd Corporation Optical device and a method of manufacturing an optical device having a photoelectric conversion element and an optical adjustment element
US7125734B2 (en) * 2005-03-09 2006-10-24 Gelcore, Llc Increased light extraction from a nitride LED
US7754507B2 (en) * 2005-06-09 2010-07-13 Philips Lumileds Lighting Company, Llc Method of removing the growth substrate of a semiconductor light emitting device
JP2009500872A (ja) * 2005-07-11 2009-01-08 ルミネイション リミテッド ライアビリティ カンパニー 光抽出が改善したレーザリフトオフｌｅｄ
US7718449B2 (en) * 2005-10-28 2010-05-18 Lumination Llc Wafer level package for very small footprint and low profile white LED devices
JP5192646B2 (ja) * 2006-01-16 2013-05-08 Ｔｏｗａ株式会社 光素子の樹脂封止方法、その樹脂封止装置、および、その製造方法
US7867793B2 (en) * 2007-07-09 2011-01-11 Koninklijke Philips Electronics N.V. Substrate removal during LED formation

Also Published As

Publication number Publication date
JP2011514688A (ja) 2011-05-06
WO2009115968A1 (en) 2009-09-24
EP2266149B1 (en) 2017-08-23
US8273587B2 (en) 2012-09-25
KR101524004B1 (ko) 2015-05-29
TWI463701B (zh) 2014-12-01
RU2502157C2 (ru) 2013-12-20
BRPI0909788B1 (pt) 2019-11-05
JP5372133B2 (ja) 2013-12-18
CN102084505A (zh) 2011-06-01
RU2010142267A (ru) 2012-04-27
TW200950158A (en) 2009-12-01
KR20100129771A (ko) 2010-12-09
EP2266149A1 (en) 2010-12-29
CN102084505B (zh) 2013-05-01
US20090230409A1 (en) 2009-09-17
US20110223696A1 (en) 2011-09-15

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Legal Events

Date Code Title Description
B25D Requested change of name of applicant approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY, LLC (US) , KONI

B25G Requested change of headquarter approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY, LLC (US) , KONI

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B15K Others concerning applications: alteration of classification

Free format text: A CLASSIFICACAO ANTERIOR ERA: H01L 33/00

Ipc: H01L 23/00 (1974.07), H01L 33/54 (2010.01)

B06T Formal requirements before examination [chapter 6.20 patent gazette]
B25D Requested change of name of applicant approved

Owner name: KONINKLIJKE PHILIPS N.V (NL) ; LUMILEDS LLC (US)

B25A Requested transfer of rights approved

Owner name: LUMILEDS HOLDING B.V. (NL)

B25B Requested transfer of rights rejected

Owner name: LUMILEDS HOLDING B.V. (NL)

Free format text: INDEFERIDO O PEDIDO DE TRANSFERENCIA CONTIDO NA PETICAO 870190039965 DE 29/04/2019, EM VIRTUDE DA SOLICITACAO JA TER SIDO ATENDIDA PELA PETICAO 870190039177 DE 25/04/2019 E PUBLICADA NA RPI2531 DE 09/07/2019.

B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 05/11/2019, OBSERVADAS AS CONDICOES LEGAIS.