JP2011514688A - フリップチップledに関するアンダーフィル処理 - Google Patents
フリップチップledに関するアンダーフィル処理 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims (15)
- 発光装置を加工する方法であって、
フリップチップ発光ダイオード(LED)ダイをサブマウントに設けるステップであって、前記LEDダイと前記サブマウントとの間には隙間が存在し、前記LEDダイは前記サブマウントに面する底部表面及び前記底部表面の反対側にある上部表面を有する、ステップと、
前記LEDダイにおいてアンダーフィル材料を、このアンダーフィル材料が前記LEDダイを封止し、且つ前記LEDダイと前記サブマウントとの間における間隔をほぼ完全に充填するように、モールド成形するステップと、
前記アンダーフィル材料を少なくとも前記LEDダイの上部表面において除去するステップと、
を含む、方法。 - 請求項1に記載の方法であって、前記LEDダイは成長基板において成長されるエピタキシャル層を含み、前記成長基板の表面は前記LEDダイの前記上部表面であり、当該方法は、更に、前記LEDダイにおいて前記アンダーフィル材料を形成するステップの後に前記エピタキシャル層から前記成長基板を除去するステップを含む、方法。
- 請求項2に記載の方法であって、前記基板は、前記アンダーフィル材料を除去するステップの後にレーザーリフトオフ技術によって前記エピタキシャル層から除去される、方法。
- 請求項1に記載の方法であって、前記アンダーフィル材料を除去するステップは、マイクロビーズブラスト法を用いて前記アンダーフィル材料を除去するステップを含む、方法。
- 請求項1に記載の方法であって、前記アンダーフィル材料を除去するステップは、エッチングによって前記アンダーフィル材料を除去するステップを含む、方法。
- 請求項1に記載の方法であって、前記LEDダイにおいて前記アンダーフィル材料を除去するステップは、
モールドに固体アンダーフィル材料を供給するステップと、
前記アンダーフィル材料を溶融させる又は軟化させるために前記モールドを加熱するステップと、
前記溶融又は軟化アンダーフィル材料を圧縮し、前記LEDダイを封止するために、前記モールドに対して前記サブマウントにおける前記LEDダイを位置させるステップと、
前記アンダーフィル材料を冷却するステップと、
を含む方法。 - 請求項1に記載の方法であって、前記LEDダイにおいて前記アンダーフィル材料をモールド成形するステップは、
モールドに対して前記サブマウントにおける前記LEDダイを位置させるステップと、
前記サブマウントとモールド空洞との間に実質的な真空を生成するステップと、
前記LEDダイを封止するために前記モールドを液体アンダーフィル材料を用いて圧力下で充填するステップと、
前記アンダーフィル材料をキュアするステップと、
を含む,方法。 - 請求項1に記載の方法であって、前記LEDダイにおいて前記アンダーフィル材料をモールド成形するステップは、
モールド空洞を軟化アンダーフィル材料を用いて充填するステップと、
前記LEDダイを前記軟化アンダーフィル材料へ浸すステップと、
前記アンダーフィル材料をキュアするステップと、
を含む、方法。 - 請求項1に記載の方法であって、フリップチップLEDをサブマウントに設けるステップは、サブマウントウェハに複数のLEDダイを設けるステップを含み、前記サブマウントウェハは、前記複数のLEDダイの対応する電極へ接合される電極を有し、各LEDダイは前記LEDダイと前記サブマウントウェハとの間の隙間を有し、前記アンダーフィル材料をモールド成形するステップは、全ての前記LEDダイに同時に実行される、方法。
- 請求項9に記載の方法であって、更に、前記アンダーフィル材料を除去するステップの後に、対応するサブマウント部分において装着されるLEDダイを分離するために、前記サブマウントウェハを個別化するステップを含む,方法。
- 請求項1に記載の方法であって、前記アンダーフィル材料がポリマである、方法。
- 請求項1に記載の方法であって、前記アンダーフィル材料はエポキシモールド成形合成材である、方法。
- 請求項1に記載の方法であって、前記LEDダイは成長基板において成長されるエピタキシャル層を含み、前記成長基板の表面は前記LEDダイの前記上部表面であり、前記アンダーフィル材料を除去するステップは前記成長基板の全ての側面が完全に露出するように前記アンダーフィル材料を除去するステップを含む、方法。
- 個別化の前の中間段階発光装置であって、
サブマウントウェハに装着されるLEDダイのアレイであって、前記サブマウントウェハは、前記LEDダイの対応する電極へ接合される電極を有し、各LEDダイは前記LEDダイと前記サブマウントウェハとの間の隙間を有する、LEDダイのアレイと、
全ての前記LEDダイを同時に且つ完全に封止する全ての前記LEDダイにわたってモールド成形されるアンダーフィル材料であって、各LEDダイと前記サブマウントウェハとの間の前記隙間をほぼ完全に充填する、アンダーフィル材料と、
を含む、中間段階発光装置。 - 発光装置であって、
フリップチップ発光ダイオード(LED)ダイと、
前記LEDダイが装着されるサブマウントであって、前記LEDとこのサブマウントの間に隙間が存在する、サブマウントと、
前記LEDダイと前記サブマウントとの間においてモールド成形されたアンダーフィルと、
を含む発光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/050,082 | 2008-03-17 | ||
US12/050,082 US20090230409A1 (en) | 2008-03-17 | 2008-03-17 | Underfill process for flip-chip leds |
PCT/IB2009/051055 WO2009115968A1 (en) | 2008-03-17 | 2009-03-13 | Underfill process for flip-chip leds |
Publications (2)
Publication Number | Publication Date |
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JP2011514688A true JP2011514688A (ja) | 2011-05-06 |
JP5372133B2 JP5372133B2 (ja) | 2013-12-18 |
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JP2011500333A Active JP5372133B2 (ja) | 2008-03-17 | 2009-03-13 | フリップチップledに関するアンダーフィル処理 |
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Country | Link |
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US (2) | US20090230409A1 (ja) |
EP (1) | EP2266149B1 (ja) |
JP (1) | JP5372133B2 (ja) |
KR (1) | KR101524004B1 (ja) |
CN (1) | CN102084505B (ja) |
BR (1) | BRPI0909788B1 (ja) |
RU (1) | RU2502157C2 (ja) |
TW (1) | TWI463701B (ja) |
WO (1) | WO2009115968A1 (ja) |
Cited By (5)
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JP2014179569A (ja) * | 2013-03-15 | 2014-09-25 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
JP2014525675A (ja) * | 2011-08-26 | 2014-09-29 | マイクロン テクノロジー, インク. | フリップチップ実装された固体放射トランスデューサを有する固体放射トランスデューサ素子ならびに関連するシステムおよび方法 |
JP2015220342A (ja) * | 2014-05-19 | 2015-12-07 | 住友電気工業株式会社 | 光半導体装置の製造方法及び光半導体装置の製造装置 |
US9412918B2 (en) | 2012-07-19 | 2016-08-09 | Nichia Corporation | Light emitting device and method of manufacturing the same |
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Also Published As
Publication number | Publication date |
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EP2266149A1 (en) | 2010-12-29 |
BRPI0909788A2 (pt) | 2015-10-06 |
CN102084505A (zh) | 2011-06-01 |
RU2502157C2 (ru) | 2013-12-20 |
EP2266149B1 (en) | 2017-08-23 |
JP5372133B2 (ja) | 2013-12-18 |
TWI463701B (zh) | 2014-12-01 |
RU2010142267A (ru) | 2012-04-27 |
WO2009115968A1 (en) | 2009-09-24 |
US20110223696A1 (en) | 2011-09-15 |
TW200950158A (en) | 2009-12-01 |
US8273587B2 (en) | 2012-09-25 |
KR101524004B1 (ko) | 2015-05-29 |
KR20100129771A (ko) | 2010-12-09 |
CN102084505B (zh) | 2013-05-01 |
US20090230409A1 (en) | 2009-09-17 |
BRPI0909788B1 (pt) | 2019-11-05 |
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