JP5313256B2 - 基板リフトオフに関する強固なled構造 - Google Patents
基板リフトオフに関する強固なled構造 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 99
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 28
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
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- Led Device Packages (AREA)
- Led Devices (AREA)
Description
Claims (19)
- 発光素子を加工する方法であって、
フリップチップ発光ダイオード(LED)ダイを基板に設けるステップであって、前記LEDダイは、サブマウントに、前記LEDダイが前記サブマウントと前記基板との間にあるように装着され、前記基板は、前記基板の縁部が前記LEDダイの縁部を越えて延在するように、前記LEDダイよりも幅広く且つ長いものである、設けるステップと、
前記LEDダイ及び前記サブマウントの間に、並びに前記LEDダイ及び基板の縁部の周囲に、絶縁アンダーフィルを設けるステップと、
前記LEDダイから基板を除去するステップであって、前記基板の前記縁部の周りにあった前記アンダーフィルの部分により、壁が、前記LEDダイの周囲に形成され、前記壁の内部境界が前記LEDダイの前記縁部から横方向へ離されている、除去するステップと、
前記基板が除去された後に光学要素を前記LEDダイの露出表面へ配置するステップであって、前記光学要素の縁部の少なくとも一部が前記アンダーフィルの前記壁の内側にある、配置するステップと、
を含む方法。 - 請求項1に記載の方法であって、前記基板を除去するステップが、レーザリフトオフ技法を使用して前記基板を除去するステップを含む、方法。
- 請求項1に記載の方法であって、LEDダイを基板に設けるステップが、
基板ウェハにおいて形成されるLED層を有するウェハを提供するステップと、
LED領域の周りのLED材料のエピタキシャル層を、前記LED領域の側面縁部に沿って前記基板の部分を露出させるために、エッチングするステップと、
前記基板の前記縁部が前記LEDダイの前記縁部を越えて延在するように前記基板に前記LEDダイを形成させるために、前記ウェハから前記LED領域を分離するステップと、
を含む方法。 - 請求項1に記載の方法であって、前記基板が成長基板である、方法。
- 請求項4に記載の方法であって、前記基板がサファイアである、方法。
- 請求項1に記載の方法であって、前記LEDがサブマウントに装着される、LEDダイを基板に設けるステップが、前記LEDダイの表面における電極を前記サブマウントの表面における対応する電極へボンディングするステップを含む、方法。
- 請求項1に記載の方法であって、絶縁アンダーフィルを設けるステップが、前記LEDダイ及び前記サブマウントの間に、並びに前記LEDダイ及び基板の縁部の周囲に、アンダーフィルを注入するステップを含む、方法。
- 請求項1に記載の方法であって、前記基板の縁部が、少なくとも0.05mmだけ前記LEDダイの縁部を越えて延在する、方法。
- 請求項1に記載の方法であって、前記基板の縁部が、少なくとも0.1mmだけ前記LEDダイの縁部を越えて延在する、方法。
- 請求項1に記載の方法であって、光学要素を前記LEDダイの露出表面へ配置するステップが、前記LEDダイの前記露出表面に蛍光体板を配置するステップを含む、方法。
- 請求項1に記載の方法であって、光学要素を前記LEDダイの露出表面へ配置するステップが、前記LEDダイの前記露出表面に前記光学要素を接着固定するステップを含む、方法。
- 請求項1に記載の方法であって、光学要素を前記LEDダイの露出表面へ配置するステップが、前記LEDダイの表面寸法より大きい表面寸法を有する光学要素を、前記LEDダイの前記露出表面に、前記光学要素の少なくとも1つの縁部が前記LEDダイの縁部を越えて延在するように、配置するステップを含む、方法。
- 請求項1に記載の方法であって、光学要素を前記LEDダイの露出表面へ配置するステップが、レンズを、前記LEDダイの前記露出表面に配置するステップを含む、方法。
- フリップチップ発光ダイオード(LED)ダイであって、前記LEDダイは、前記LEDダイから除去された基板において形成されていた、フリップチップ発光ダイオード(LED)ダイと、
前記LEDダイが装着されるサブマウントと、
前記LEDダイ及び前記サブマウントの間に、並びに前記LEDダイの縁部の周囲における、絶縁アンダーフィルであって、前記アンダーフィル材料の壁が前記LEDの露出表面より上において及び周囲に延在し、前記壁の内部境界が、前記LEDダイの縁部から横方向に離されている、絶縁アンダーフィルと、
前記LEDダイの前記露出表面における光学要素であって、当該光学要素の縁部の少なくとも部分が、前記アンダーフィルの前記壁の前記内部境界の内側にある、発光素子。 - 請求項14に記載の素子であって、前記光学要素は、前記LEDダイの前記露出表面へ固定される蛍光体板である、素子。
- 請求項14に記載の素子であって、前記光学要素は、前記LEDダイの前記露出表面へ固定されるレンズである、素子。
- 請求項14に記載の素子であって、前記光学要素は、前記光学要素の少なくとも1つの縁部が前記LEDダイの縁部を越えて延在するように、前記LEDダイの前記露出表面の表面寸法より大きい表面寸法を有する、素子。
- 請求項14に記載の素子であって、前記壁の内部境界が、少なくとも0.05mmだけ前記LEDダイの縁部から横方向に離されている、素子。
- フリップチップ発光ダイオード(LED)ダイを基板に設けるステップであって、前記LEDダイは、サブマウントに、前記LEDダイが前記サブマウントと前記基板との間にあるように装着され、前記基板は、前記基板の縁部が前記LEDダイの縁部を越えて延在するように、前記LEDダイよりも幅広く且つ長い、設けるステップと、
前記LEDダイ及び前記サブマウントの間に、並びに前記LEDダイ及び基板の縁部の周囲に、絶縁アンダーフィルを設けるステップと、
前記LEDダイから基板を除去するステップであって、前記基板の前記縁部の周りにあった前記アンダーフィルの部分により、壁が、前記LEDダイの周囲に形成され、前記壁の内部境界が前記LEDダイの前記縁部から横方向へ離されている、除去するステップと、
前記基板が除去された後に光学要素を前記LEDダイの露出表面へ配置するステップであって、前記光学要素の縁部の少なくとも一部が前記アンダーフィルの前記壁の内部にある、配置するステップと、
を含む方法を用いて形成される発光素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/876,404 | 2007-10-22 | ||
US11/876,404 US7687810B2 (en) | 2007-10-22 | 2007-10-22 | Robust LED structure for substrate lift-off |
PCT/IB2008/054362 WO2009053916A1 (en) | 2007-10-22 | 2008-10-22 | Robust led structure for substrate lift-off |
Publications (2)
Publication Number | Publication Date |
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JP2011501428A JP2011501428A (ja) | 2011-01-06 |
JP5313256B2 true JP5313256B2 (ja) | 2013-10-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010529493A Active JP5313256B2 (ja) | 2007-10-22 | 2008-10-22 | 基板リフトオフに関する強固なled構造 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7687810B2 (ja) |
EP (1) | EP2206165B8 (ja) |
JP (1) | JP5313256B2 (ja) |
KR (1) | KR101468905B1 (ja) |
CN (1) | CN101868863B (ja) |
RU (1) | RU2477906C2 (ja) |
TW (1) | TWI437724B (ja) |
WO (1) | WO2009053916A1 (ja) |
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US20090101929A1 (en) | 2009-04-23 |
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US7687810B2 (en) | 2010-03-30 |
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TW200937682A (en) | 2009-09-01 |
RU2477906C2 (ru) | 2013-03-20 |
CN101868863A (zh) | 2010-10-20 |
EP2206165B1 (en) | 2017-12-13 |
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