JP5017399B2 - 半導体発光装置および半導体発光装置の製造方法 - Google Patents
半導体発光装置および半導体発光装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 91
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims description 67
- 150000001875 compounds Chemical class 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 46
- 230000001681 protective effect Effects 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 238000007788 roughening Methods 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 135
- 229910052594 sapphire Inorganic materials 0.000 description 33
- 239000010980 sapphire Substances 0.000 description 33
- 239000010408 film Substances 0.000 description 21
- 238000000605 extraction Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Power Engineering (AREA)
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Description
前記支持基板上にバンプを介して接合される窒化物系III−V族化合物半導体層からなる発光素子と、
前記支持基板と前記発光素子との間に配置されるアンダーフィル材と、を備え、
前記アンダーフィル材は、前記発光素子の端面よりも外側に配置されて前記発光素子の端面を取り囲むように配置されるリブ部を有することを特徴とする半導体発光装置が提供される。
前記剥離対象基板および前記化合物半導体層を、発光素子の単位で分断して複数の発光部を形成する工程と、
前記複数の発光部のそれぞれをシート材に接合した状態で、前記発光部の端面全体を保護膜で覆う工程と、
前記保護膜で覆われた前記発光部から前記シート材を除去した後に、前記発光部内の前記化合物半導体層と支持基板とをバンプを介して接合する工程と、
前記支持基板の表面から前記保護膜の側面の少なくとも一部までをアンダーフィル材で覆う工程と、
前記保護膜を除去して、前記発光部の端面よりも外側に配置されて前記発光部の端面を取り囲むように配置されるリブ部を前記アンダーフィル材にて形成する工程と、
レーザリフトオフ法により前記剥離対象基板を剥離する工程と、
前記剥離対象基板と接触されていた前記発光層の表面を粗面化する工程と、を備えることを特徴とする半導体発光装置の製造方法が提供される。
4 p電極層
5 n電極層
6 化合物半導体層
7 n型コンタクト層
8 n型半導体層
9 発光層
10 p型半導体層
11 p型コンタクト層
12 光取り出し面
20 サファイア基板
31 保護膜
32 アンダーフィル材
32a リブ部
Claims (5)
- 支持基板と、
前記支持基板上にバンプを介して接合される窒化物系III−V族化合物半導体層からなる発光素子と、
積層方向において前記支持基板と前記発光素子との間に配置され、かつ基板面方向において前記発光素子の側面に接触せずに、前記側面より外側に、前記発光素子の前記側面を取り囲むように配置されるリブ部を有するアンダーフィル材と、を備え、
ることを特徴とする半導体発光装置。 - 前記アンダーフィル材の上方かつ前記リブ部の内側に配置され、かつ前記発光素子の端面の少なくとも一部を覆うように配置される蛍光体を含有する樹脂部材を備えることを特徴とする請求項1に記載の半導体発光装置。
- 前記発光素子の表面全体を含めて、前記リブ部の外側端面よりも内側を覆う、前記蛍光体を含有する樹脂からなるパッケージ部材を備えることを特徴とする請求項2に記載の半導体発光装置。
- 前記アンダーフィル材は、硬度D60乃至D85で、かつ粘度0.8乃至14Pa・sのエポキシ系樹脂であることを特徴とする請求項1乃至3のいずれかに記載の半導体発光装置。
- 剥離対象基板の上に窒化物系III−V族化合物半導体層を形成する工程と、
前記剥離対象基板および前記化合物半導体層を、発光素子の単位で分断して複数の発光部を形成する工程と、
前記複数の発光部のそれぞれをシート材に接合した状態で、前記発光部の端面全体を保護膜で覆う工程と、
前記保護膜で覆われた前記発光部から前記シート材を除去した後に、前記発光部内の前記化合物半導体層と支持基板とをバンプを介して接合する工程と、
前記支持基板の表面から前記保護膜の側面の少なくとも一部までをアンダーフィル材で覆う工程と、
前記保護膜を除去して、前記発光部の側面に接触せずに、前記側面よりも外側に配置されて前記発光部の側面を取り囲むように配置されるリブ部を前記アンダーフィル材にて形成する工程と、
レーザリフトオフ法により前記剥離対象基板を剥離する工程と、
前記剥離対象基板と接触されていた前記発光層の表面を粗面化する工程と、を備えることを特徴とする半導体発光装置の製造方法。
Priority Applications (5)
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JP2010052209A JP5017399B2 (ja) | 2010-03-09 | 2010-03-09 | 半導体発光装置および半導体発光装置の製造方法 |
US12/874,568 US8680548B2 (en) | 2010-03-09 | 2010-09-02 | Semiconductor light emitting device and method of fabricating semiconductor light emitting device |
TW099129917A TWI447966B (zh) | 2010-03-09 | 2010-09-03 | 半導體發光裝置及半導體發光裝置之製造方法 |
CN201010275105.XA CN102194986B (zh) | 2010-03-09 | 2010-09-06 | 半导体发光器件以及制造半导体发光器件的方法 |
KR1020100086836A KR101158242B1 (ko) | 2010-03-09 | 2010-09-06 | 반도체 발광 장치 및 그 제조 방법 |
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JP2010052209A JP5017399B2 (ja) | 2010-03-09 | 2010-03-09 | 半導体発光装置および半導体発光装置の製造方法 |
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US (1) | US8680548B2 (ja) |
JP (1) | JP5017399B2 (ja) |
KR (1) | KR101158242B1 (ja) |
CN (1) | CN102194986B (ja) |
TW (1) | TWI447966B (ja) |
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CN102194986A (zh) | 2011-09-21 |
CN102194986B (zh) | 2014-10-29 |
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