JP7021625B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP7021625B2 JP7021625B2 JP2018184318A JP2018184318A JP7021625B2 JP 7021625 B2 JP7021625 B2 JP 7021625B2 JP 2018184318 A JP2018184318 A JP 2018184318A JP 2018184318 A JP2018184318 A JP 2018184318A JP 7021625 B2 JP7021625 B2 JP 7021625B2
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
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- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 229920002050 silicone resin Polymers 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Description
[2]前記nパッド電極を前記第3の隙間と挟む前記n電極上の位置、及び前記pパッド電極を前記第3の隙間と挟む前記p電極上の位置に設けられ、前記アンダーフィルに接触する、硬化前の前記アンダーフィルの流れを阻害するための流動阻害部を備えた、上記[1]に記載の発光装置。
[3]前記第2の隙間の前記第3の隙間への合流点が、前記第3の隙間の長さ方向の中間点からずれた位置にある、上記[1]又は[2]に記載の発光装置。
[4]前記第3の隙間の長さ方向の一方の端部を含む一部の領域において、前記第3の隙間の幅が前記端部に向かって広がっている、上記[1]~[3]のいずれか1項に記載の発光装置。
[5]前記n電極及びp電極の厚さが1.0μm以上である、上記[1]~[4]のいずれか1項に記載の発光装置。
図1は、第1の実施の形態に係る発光装置1の上面図である。図2は、図1の切断線A-Aにおいて切断された発光装置1の垂直断面図である。なお、図1においては、アンダーフィル16及び封止樹脂17の図示を省略している。
本発明の第2の実施の形態に係る発光装置は、発光素子20の外側を流れる硬化前のアンダーフィル16の流れを抑制する流動阻害部を電極12上に有する。なお、第1の実施の形態と同様の部材については、同じ符号を付し、その説明を省略又は簡略化する。
上記第1の実施の形態に係る発光装置1によれば、隙間G1及び隙間G2が設けられていることにより、配線基板10と発光素子20の間の空間におけるアンダーフィル16へのボイドの混入を抑えることができる。
10 配線基板
11 基板
12、12n、12p 電極
13 ダム
14n nパッド電極
141n、142n 島
14p pパッド電極
141p、142p 島
15 流動阻害部
16 アンダーフィル
17 封止樹脂
20 発光素子
30 隙間
G1、G2、G3 隙間
Claims (4)
- 基板の表面にn電極及びp電極が配線された配線基板と、
前記n電極に直接接合されたnパッド電極及び前記p電極に直接接合されたpパッド電極を有し、前記n電極と前記p電極の間の第1の隙間を跨いで設置された発光素子と、
前記配線基板と前記発光素子の間の空間を充填するアンダーフィルと、
を備え、
前記nパッド電極と前記pパッド電極の少なくとも一方が線状の第2の隙間を挟んで2つの島に分割され、
前記第2の隙間が、前記nパッド電極と前記pパッド電極の間の線状の第3の隙間と連続し、
前記nパッド電極を前記第3の隙間と挟む前記n電極上の位置、及び前記pパッド電極を前記第3の隙間と挟む前記p電極上の位置に設けられ、前記アンダーフィルに接触する、硬化前の前記アンダーフィルの流れを阻害するための流動阻害部を備えた、
発光装置。 - 前記第2の隙間の前記第3の隙間への合流点が、前記第3の隙間の長さ方向の中間点からずれた位置にある、
請求項1に記載の発光装置。 - 前記第3の隙間の長さ方向の一方の端部を含む一部の領域において、前記第3の隙間の幅が前記端部に向かって広がっている、
請求項1又は2のいずれか1項に記載の発光装置。 - 前記n電極及びp電極の厚さが1.0μm以上である、
請求項1~3のいずれか1項に記載の発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018184318A JP7021625B2 (ja) | 2018-09-28 | 2018-09-28 | 発光装置 |
US16/534,583 US11088303B2 (en) | 2018-09-28 | 2019-08-07 | Light emitting device |
CN201910801537.0A CN110970536B (zh) | 2018-09-28 | 2019-08-28 | 发光装置 |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018184318A JP7021625B2 (ja) | 2018-09-28 | 2018-09-28 | 発光装置 |
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Publication Number | Publication Date |
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JP2020053644A JP2020053644A (ja) | 2020-04-02 |
JP7021625B2 true JP7021625B2 (ja) | 2022-02-17 |
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JP2018184318A Active JP7021625B2 (ja) | 2018-09-28 | 2018-09-28 | 発光装置 |
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US (1) | US11088303B2 (ja) |
JP (1) | JP7021625B2 (ja) |
CN (1) | CN110970536B (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150386A (ja) | 2003-11-14 | 2005-06-09 | Stanley Electric Co Ltd | 半導体装置及びその製造方法 |
JP2006344822A (ja) | 2005-06-09 | 2006-12-21 | Shinko Electric Ind Co Ltd | 半導体装置用実装基板及び半導体装置の実装構造 |
JP2018019032A (ja) | 2016-07-29 | 2018-02-01 | 豊田合成株式会社 | 発光装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2571024B2 (ja) * | 1994-09-28 | 1997-01-16 | 日本電気株式会社 | マルチチップモジュール |
JP3431406B2 (ja) * | 1996-07-30 | 2003-07-28 | 株式会社東芝 | 半導体パッケージ装置 |
CN100446205C (zh) * | 2004-03-29 | 2008-12-24 | 日本电气株式会社 | 半导体装置和其制造方法 |
US7687810B2 (en) * | 2007-10-22 | 2010-03-30 | Philips Lumileds Lighting Company, Llc | Robust LED structure for substrate lift-off |
WO2011099384A1 (ja) * | 2010-02-09 | 2011-08-18 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
KR101383137B1 (ko) * | 2010-05-26 | 2014-04-09 | 가부시키가이샤 무라타 세이사쿠쇼 | 부품 내장 기판 |
JP5337105B2 (ja) * | 2010-06-03 | 2013-11-06 | 株式会社東芝 | 半導体発光装置 |
JP5531794B2 (ja) * | 2010-06-09 | 2014-06-25 | 日亜化学工業株式会社 | 半導体発光素子の製造方法 |
JP2012079876A (ja) * | 2010-09-30 | 2012-04-19 | Fujitsu Ltd | 電子装置の製造方法及び電子装置 |
EP2439793B1 (en) * | 2010-10-11 | 2016-03-16 | LG Innotek Co., Ltd. | Light emitting device and lighting instrument including the same |
KR102212666B1 (ko) * | 2014-06-27 | 2021-02-05 | 엘지이노텍 주식회사 | 발광소자 |
CN110100309A (zh) * | 2016-12-23 | 2019-08-06 | 株式会社流明斯 | 微型led模块及其制造方法 |
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2018
- 2018-09-28 JP JP2018184318A patent/JP7021625B2/ja active Active
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2019
- 2019-08-07 US US16/534,583 patent/US11088303B2/en active Active
- 2019-08-28 CN CN201910801537.0A patent/CN110970536B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150386A (ja) | 2003-11-14 | 2005-06-09 | Stanley Electric Co Ltd | 半導体装置及びその製造方法 |
JP2006344822A (ja) | 2005-06-09 | 2006-12-21 | Shinko Electric Ind Co Ltd | 半導体装置用実装基板及び半導体装置の実装構造 |
JP2018019032A (ja) | 2016-07-29 | 2018-02-01 | 豊田合成株式会社 | 発光装置の製造方法 |
Also Published As
Publication number | Publication date |
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CN110970536B (zh) | 2023-06-09 |
JP2020053644A (ja) | 2020-04-02 |
US20200105985A1 (en) | 2020-04-02 |
CN110970536A (zh) | 2020-04-07 |
US11088303B2 (en) | 2021-08-10 |
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