JPWO2016174892A1 - Ledパッケージ、発光装置およびledパッケージの製造方法 - Google Patents
Ledパッケージ、発光装置およびledパッケージの製造方法 Download PDFInfo
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- JPWO2016174892A1 JPWO2016174892A1 JP2017515400A JP2017515400A JPWO2016174892A1 JP WO2016174892 A1 JPWO2016174892 A1 JP WO2016174892A1 JP 2017515400 A JP2017515400 A JP 2017515400A JP 2017515400 A JP2017515400 A JP 2017515400A JP WO2016174892 A1 JPWO2016174892 A1 JP WO2016174892A1
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- led
- electrode
- auxiliary electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (6)
- 下面に素子電極を有するLED素子と、
蛍光体を含有し前記LED素子の上面および側面を被覆する蛍光体層と、
上面が前記素子電極の下面に接着された補助電極と、を有し、
前記補助電極は、
前記素子電極よりも大きく、
前記上面よりも下面の方が小さくなる段差を有し、
前記段差が形成された側の端部が前記蛍光体層の外周面よりも内側に位置するように配置されている、
ことを特徴とするLEDパッケージ。 - 前記LED素子は箱型の形状を有し、
前記補助電極の段差は前記箱型の縦方向と横方向の両方で形成されている、請求項1に記載のLEDパッケージ。 - 下面に素子電極を有するLED素子と、
蛍光体を含有し前記LED素子の上面および側面を被覆する蛍光体層と、
上面が前記素子電極の下面に接着された補助電極と、
前記補助電極が接続される配線パターンが形成された実装基板と、を有し、
前記補助電極は、
前記素子電極よりも大きく、
前記上面よりも下面の方が小さくなる段差を有し、
前記段差が形成された側の端部が前記蛍光体層の外周面よりも内側に位置するように配置されている、
ことを特徴とする発光装置。 - 前記LED素子は下面に2個の素子電極を有し、
前記補助電極は、前記2個の素子電極にそれぞれ対応して設けられ、
前記実装基板の配線パターンは、前記2個の素子電極にそれぞれ接続される2個の部分に分かれており、
前記素子電極同士の間隔と、前記補助電極同士の間隔と、前記配線パターン同士の間隔とが一致している、請求項3に記載の発光装置。 - LED素子の下面に形成された素子電極よりも大きい上面と前記上面よりも下面の方が小さくなる段差とを有する金属片を、前記金属片と同じ形状の凹部が形成された基板の上に配置する工程と、
前記基板を振動させて前記金属片を前記凹部に収容させる工程と、
蛍光体を含有する蛍光体層で上面および側面が被覆され、前記蛍光体層を含めた幅が前記金属片の幅よりも大きいLED素子を、前記金属片が補助電極として前記LED素子の素子電極に接続されるように、前記凹部に収容された前記金属片の上に実装する工程と、
前記補助電極が接続された前記LED素子を前記基板から取り外す工程と、
を有することを特徴とするLEDパッケージの製造方法。 - 前記配置する工程では、前記凹部が複数個形成された基板の上に前記金属片を複数個配置し、
前記実装する工程では、前記凹部に収容された複数個の前記金属片の上に複数個の前記LED素子を実装する、請求項5に記載の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015090803 | 2015-04-27 | ||
JP2015090803 | 2015-04-27 | ||
PCT/JP2016/053835 WO2016174892A1 (ja) | 2015-04-27 | 2016-02-09 | Ledパッケージ、発光装置およびledパッケージの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016174892A1 true JPWO2016174892A1 (ja) | 2018-02-22 |
JP6611795B2 JP6611795B2 (ja) | 2019-11-27 |
Family
ID=57199230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017515400A Active JP6611795B2 (ja) | 2015-04-27 | 2016-02-09 | Ledパッケージ、発光装置およびledパッケージの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10158056B2 (ja) |
JP (1) | JP6611795B2 (ja) |
CN (1) | CN107534076B (ja) |
DE (1) | DE112016001935T5 (ja) |
WO (1) | WO2016174892A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180090002A (ko) * | 2017-02-02 | 2018-08-10 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR102513954B1 (ko) * | 2018-05-10 | 2023-03-27 | 주식회사 루멘스 | 박막 패드를 구비하는 발광 소자 패키지 및 그 제조 방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010267741A (ja) * | 2009-05-13 | 2010-11-25 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
JP2011129726A (ja) * | 2009-12-18 | 2011-06-30 | Daishinku Corp | 電子部品用パッケージのベース、電子部品用パッケージ |
WO2011093454A1 (ja) * | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
JP2012074732A (ja) * | 2010-01-29 | 2012-04-12 | Toshiba Corp | Ledパッケージ |
US20140284639A1 (en) * | 2013-03-21 | 2014-09-25 | Advanced Optoelectronic Technology, Inc. | Light emitting diode package |
JP5634647B1 (ja) * | 2012-12-03 | 2014-12-03 | シチズンホールディングス株式会社 | Ledモジュール |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273160A (ja) | 2002-03-15 | 2003-09-26 | Matsushita Electric Ind Co Ltd | 半導体実装モジュール |
CN1759492B (zh) * | 2003-03-10 | 2010-04-28 | 丰田合成株式会社 | 固体元件装置的制造方法 |
JP4667803B2 (ja) * | 2004-09-14 | 2011-04-13 | 日亜化学工業株式会社 | 発光装置 |
JP4675906B2 (ja) * | 2004-10-27 | 2011-04-27 | 京セラ株式会社 | 発光素子搭載用基板、発光素子収納用パッケージ、発光装置および照明装置 |
JP5187714B2 (ja) | 2006-07-11 | 2013-04-24 | 独立行政法人産業技術総合研究所 | 半導体チップの電極接続構造 |
CN101621101A (zh) * | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
JP4764519B1 (ja) | 2010-01-29 | 2011-09-07 | 株式会社東芝 | Ledパッケージ |
JP2011233650A (ja) * | 2010-04-26 | 2011-11-17 | Toshiba Corp | 半導体発光装置 |
-
2016
- 2016-02-09 DE DE112016001935.1T patent/DE112016001935T5/de not_active Withdrawn
- 2016-02-09 US US15/569,663 patent/US10158056B2/en active Active
- 2016-02-09 WO PCT/JP2016/053835 patent/WO2016174892A1/ja active Application Filing
- 2016-02-09 JP JP2017515400A patent/JP6611795B2/ja active Active
- 2016-02-09 CN CN201680024247.4A patent/CN107534076B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010267741A (ja) * | 2009-05-13 | 2010-11-25 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
JP2011129726A (ja) * | 2009-12-18 | 2011-06-30 | Daishinku Corp | 電子部品用パッケージのベース、電子部品用パッケージ |
WO2011093454A1 (ja) * | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
JP2012074732A (ja) * | 2010-01-29 | 2012-04-12 | Toshiba Corp | Ledパッケージ |
JP5634647B1 (ja) * | 2012-12-03 | 2014-12-03 | シチズンホールディングス株式会社 | Ledモジュール |
US20140284639A1 (en) * | 2013-03-21 | 2014-09-25 | Advanced Optoelectronic Technology, Inc. | Light emitting diode package |
Also Published As
Publication number | Publication date |
---|---|
US20180123008A1 (en) | 2018-05-03 |
CN107534076B (zh) | 2019-07-05 |
CN107534076A (zh) | 2018-01-02 |
WO2016174892A1 (ja) | 2016-11-03 |
US10158056B2 (en) | 2018-12-18 |
JP6611795B2 (ja) | 2019-11-27 |
DE112016001935T5 (de) | 2018-02-15 |
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