BRPI0916438A2 - dispositivo emissor de luz - Google Patents

dispositivo emissor de luz

Info

Publication number
BRPI0916438A2
BRPI0916438A2 BRPI0916438A BRPI0916438A BRPI0916438A2 BR PI0916438 A2 BRPI0916438 A2 BR PI0916438A2 BR PI0916438 A BRPI0916438 A BR PI0916438A BR PI0916438 A BRPI0916438 A BR PI0916438A BR PI0916438 A2 BRPI0916438 A2 BR PI0916438A2
Authority
BR
Brazil
Prior art keywords
light emitting
emitting device
light
emitting
Prior art date
Application number
BRPI0916438A
Other languages
English (en)
Inventor
Hideo Asakawa
Morito Kanada
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008195484A external-priority patent/JP5233478B2/ja
Priority claimed from JP2008194918A external-priority patent/JP5444654B2/ja
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of BRPI0916438A2 publication Critical patent/BRPI0916438A2/pt
Publication of BRPI0916438B1 publication Critical patent/BRPI0916438B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
BRPI0916438 2008-07-29 2009-07-08 dispositivo emissor de luz BRPI0916438B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008195484A JP5233478B2 (ja) 2008-07-29 2008-07-29 発光装置
JP2008194918A JP5444654B2 (ja) 2008-07-29 2008-07-29 発光装置
PCT/JP2009/003192 WO2010013396A1 (ja) 2008-07-29 2009-07-08 発光装置

Publications (2)

Publication Number Publication Date
BRPI0916438A2 true BRPI0916438A2 (pt) 2016-02-16
BRPI0916438B1 BRPI0916438B1 (pt) 2019-11-26

Family

ID=41610112

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0916438 BRPI0916438B1 (pt) 2008-07-29 2009-07-08 dispositivo emissor de luz

Country Status (7)

Country Link
US (1) US8525208B2 (pt)
EP (1) EP2315263B1 (pt)
KR (1) KR101602977B1 (pt)
CN (1) CN102113139B (pt)
BR (1) BRPI0916438B1 (pt)
TW (1) TWI456784B (pt)
WO (1) WO2010013396A1 (pt)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012079723A (ja) * 2010-09-30 2012-04-19 Toyoda Gosei Co Ltd 発光装置
JP5867417B2 (ja) * 2011-02-10 2016-02-24 日亜化学工業株式会社 発光装置、発光装置の製造方法、及びパッケージアレイ
CN102651443B (zh) * 2011-02-28 2015-01-07 展晶科技(深圳)有限公司 用于发光二极管封装的导电基板
TWI451605B (zh) * 2011-03-08 2014-09-01 Lextar Electronics Corp 具有金屬反射面與散熱塊之發光二極體結構
TWI419384B (zh) * 2011-03-24 2013-12-11 Lextar Electronics Corp 發光二極體封裝結構
CN102694103B (zh) 2011-03-25 2015-07-08 展晶科技(深圳)有限公司 Led封装结构
TWI455379B (zh) * 2011-04-19 2014-10-01 Lextar Electronics Corp 發光二極體封裝結構
KR101830717B1 (ko) * 2011-06-30 2018-02-21 엘지이노텍 주식회사 발광 소자 패키지
JP5796394B2 (ja) * 2011-07-29 2015-10-21 日亜化学工業株式会社 発光装置
JP5978572B2 (ja) * 2011-09-02 2016-08-24 日亜化学工業株式会社 発光装置
JP5698633B2 (ja) * 2011-09-21 2015-04-08 株式会社東芝 半導体発光装置、発光モジュール、および半導体発光装置の製造方法
JP5931410B2 (ja) * 2011-11-15 2016-06-08 株式会社小糸製作所 発光モジュールとその製造方法及び車両用灯具
DE102013201363A1 (de) * 2012-01-31 2013-08-01 Nichia Corp. Lichtemittierendes Bauelement
JP6064606B2 (ja) * 2012-01-31 2017-01-25 日亜化学工業株式会社 発光装置
CN104241262B (zh) * 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
JP6236999B2 (ja) 2013-08-29 2017-11-29 日亜化学工業株式会社 発光装置
JP6414427B2 (ja) * 2013-10-03 2018-10-31 日亜化学工業株式会社 発光装置実装構造体
JP6318844B2 (ja) * 2014-05-20 2018-05-09 日亜化学工業株式会社 発光装置
JP6661890B2 (ja) * 2014-05-21 2020-03-11 日亜化学工業株式会社 発光装置
JP6374339B2 (ja) 2015-03-26 2018-08-15 日亜化学工業株式会社 発光装置
JP6168096B2 (ja) * 2015-04-28 2017-07-26 日亜化学工業株式会社 発光装置、パッケージ及びそれらの製造方法
KR102417181B1 (ko) * 2015-11-09 2022-07-05 삼성전자주식회사 발광 패키지, 반도체 발광 소자, 발광 모듈 및 발광 패키지의 제조 방법
KR102486035B1 (ko) * 2016-01-28 2023-01-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지 및 이를 구비한 발광 장치
US10424699B2 (en) * 2016-02-26 2019-09-24 Nichia Corporation Light emitting device
JP6354809B2 (ja) * 2016-08-16 2018-07-11 日亜化学工業株式会社 発光装置の製造方法及び複合基板
JP6583297B2 (ja) 2017-01-20 2019-10-02 日亜化学工業株式会社 発光装置用複合基板および発光装置の製造方法
KR20190019691A (ko) 2017-08-18 2019-02-27 서울반도체 주식회사 발광 다이오드 패키지
US11561338B2 (en) 2019-09-30 2023-01-24 Nichia Corporation Light-emitting module
US11112555B2 (en) 2019-09-30 2021-09-07 Nichia Corporation Light-emitting module with a plurality of light guide plates and a gap therein

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3461332B2 (ja) * 1999-09-10 2003-10-27 松下電器産業株式会社 リードフレーム及びそれを用いた樹脂パッケージと光電子装置
MY131962A (en) * 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
US6841931B2 (en) * 2001-04-12 2005-01-11 Toyoda Gosei Co., Ltd. LED lamp
JP3708026B2 (ja) 2001-04-12 2005-10-19 豊田合成株式会社 Ｌｅｄランプ
JP4269709B2 (ja) * 2002-02-19 2009-05-27 日亜化学工業株式会社 発光装置およびその製造方法
TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
JP3991961B2 (ja) 2002-09-05 2007-10-17 日亜化学工業株式会社 側面発光型発光装置
KR100550856B1 (ko) * 2003-06-03 2006-02-10 삼성전기주식회사 발광 다이오드(ｌｅｄ) 소자의 제조 방법
JP5032747B2 (ja) * 2005-02-14 2012-09-26 日亜化学工業株式会社 半導体装置
JP4830321B2 (ja) * 2005-03-14 2011-12-07 パナソニック株式会社 半導体発光装置
JP4922663B2 (ja) 2006-05-18 2012-04-25 スタンレー電気株式会社 半導体光学装置
JP2007317974A (ja) 2006-05-29 2007-12-06 Enomoto Co Ltd サイドビュータイプｌｅｄデバイス及びそれを製造する方法
KR100772433B1 (ko) * 2006-08-23 2007-11-01 서울반도체 주식회사 반사면을 구비하는 리드단자를 채택한 발광 다이오드패키지
JP4914710B2 (ja) 2006-12-27 2012-04-11 日立ケーブルプレシジョン株式会社 発光素子実装パッケージ用リードフレームおよびその製造方法
TWI329934B (en) * 2007-01-17 2010-09-01 Chi Mei Lighting Tech Corp Lead frame structure of light emitting diode
JP5060172B2 (ja) * 2007-05-29 2012-10-31 岩谷産業株式会社 半導体発光装置

Also Published As

Publication number Publication date
TW201021249A (en) 2010-06-01
US8525208B2 (en) 2013-09-03
EP2315263B1 (en) 2020-06-24
CN102113139B (zh) 2016-01-06
WO2010013396A1 (ja) 2010-02-04
EP2315263A4 (en) 2014-08-20
BRPI0916438B1 (pt) 2019-11-26
CN102113139A (zh) 2011-06-29
KR20110036759A (ko) 2011-04-08
EP2315263A1 (en) 2011-04-27
US20110175127A1 (en) 2011-07-21
TWI456784B (zh) 2014-10-11
KR101602977B1 (ko) 2016-03-11

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Legal Events

Date Code Title Description
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 26/11/2019, OBSERVADAS AS CONDICOES LEGAIS. (CO) 10 (DEZ) ANOS CONTADOS A PARTIR DE 26/11/2019, OBSERVADAS AS CONDICOES LEGAIS