CN102694103B - Led封装结构 - Google Patents

Led封装结构 Download PDF

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Publication number
CN102694103B
CN102694103B CN201110073542.8A CN201110073542A CN102694103B CN 102694103 B CN102694103 B CN 102694103B CN 201110073542 A CN201110073542 A CN 201110073542A CN 102694103 B CN102694103 B CN 102694103B
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encapsulation structure
plane
led chip
led
led encapsulation
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CN102694103A (zh
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柯志勋
蔡明达
张超雄
詹勋伟
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Rugao Tianan Electric Technology Co ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to TW100114355A priority patent/TW201240154A/zh
Priority to US13/300,618 priority patent/US8564003B2/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明提供一种LED封装结构,其包括一个基板、一个反射层、一个光吸收层、一个荧光层以及一个LED芯片。所述基板具有两个电极,用以设置所述LED芯片,并达成电性连接。所述反射层设置于所述基板上,其具有一个第一斜面环绕着所述LED芯片。所述反射层的内部设置所述荧光层,并覆盖所述LED芯片,所述反射层的外部被所述光吸收层所包覆。所述光吸收层具有一个第二斜面并面向所述LED芯片,所述第二斜面的倾斜角大于所述第一斜面的倾斜角。本发明的所述光吸收层可吸收外界干扰的光线,以维护LED光源在户外使用时的良好发光效能。

Description

LED封装结构
技术领域
本发明涉及一种LED封装结构,尤其涉及一种具有较佳出光效果的LED封装结构。
背景技术
LED产业是近几年最受瞩目的产业之一,发展至今,LED产品已具有节能、省电、高效率、反应时间快、寿命周期时间长、且不含汞、具有环保效益等优点,然而LED高功率产品为获得所需要的亮度与颜色,在LED封装结构中具有一个反射层设置。所述反射层通常是使用塑料制成,例如,PPA(Polyphthalamide)或是压克力(PMMA)等其它高热塑性的塑料。当LED光源应用在户外的场所、广告刊板时,所述反射层塑料受紫外光(UV)的照射容易黄化或变质,且当所述反射层因LED封装结构在小型化而薄化时,这样的塑料容易使LED芯片的光线穿过所述反射层,因此不但会造成出光的饱和度不足、效率降低,还会因为光线穿过所述反射层的折射关系产生光晕现象。目前LED封装结构中通常具有荧光粉的设置,在所述反射层的透光情形下,容易受外界光线的照射产生非必要的激发光,这将会影响LED封装结构的发光质量,造成不良的使用效果。
发明内容
有鉴于此,有必要提供一种可维护发光饱和度、避免外界光线干涉的LED封装结构。
一种LED封装结构,其包括一个基板、一个反射层、一个光吸收层、一个荧光层以及一个LED芯片。所述基板具有两个电极,用以设置所述LED芯片, 并达成电性连接。所述反射层设置于所述基板上, 其具有一个第一斜面环绕着所述LED芯片。所述反射层的内部设置所述荧光层, 并覆盖所述LED芯片,所述反射层的外部被所述光吸收层所包覆。所述光吸收层具有一个第二斜面并面向所述LED芯片,所述第二斜面的倾斜角大于所述第一斜面的倾斜角。
上述LED封装结构,由于所述反射层的外部包覆具有所述光吸收层,使外界阳光或是其它可能干涉的光线,可直接被所述光吸收层予以吸收,不会影响所述LED封装结构的发光效果,且所述光吸收层的第二斜面具有较大的倾斜角度,可以避开所述LED封装结构的出光路径,维持其较佳的发光饱和度以及对比颜色。
附图说明
图1是本发明LED封装结构的剖视图。
图2是本发明LED封装结构发光使用示意图。
主要元件符号说明
LED封装结构 10
基板 12
顶面 120
底面 1202
电极 122、124
反射层 14
第一斜面 142
第一倾斜角 α
光吸收层 15
第二斜面 152
第二倾斜角 β
荧光层 16
透明覆盖层 162
LED芯片 18
导电线 182
发射光束 X
阳光光束 Y
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合附图对本发明作一具体介绍。
请参阅图1,所示为本发明LED封装结构10,包括一个基板12、一个反射层14、一个光吸收层15、一个荧光层16以及一个LED芯片18。所述基板12具有两个电极122、124,所述电极122、124由所述基板12具有的一个顶面120延伸至所述顶面120相对的底面1202。所述两个电极122、124一个为正电极,一个为负电极。所述两个电极122、124的其中一个所述电极122上承载所述LED芯片18,所述LED芯片18通过导电线182分别与所述电极122、124达成电性连接。所述反射层14设置于所述基板12的顶面120上,其具有一个第一斜面142,所述第一斜面142面向所述LED芯片18并环绕于所述LED芯片18的周缘。所述第一斜面142与所述基板12之间具有一个第一倾斜角α,即,所述第一倾斜角α是所述第一斜面142与所述基板12上的所述电极122、124表面之间的夹角。所述第一倾斜角α的角度是为90度至150度之间。所述反射层14具有反射光线的作用,其材料可以是塑料或是高分子材料,例如,PPA(Polyphthalamide) 塑料或是环氧树脂(Epoxy) 材料。所述反射层14的外部被所述光吸收层15包覆,所述光吸收层15具有一个第二斜面152,所述第二斜面152面向所述LED芯片18。所述第二斜面152与所述荧光层16之间具有一个第二倾斜角β,即,所述第二倾斜角β是所述第二斜面152与所述荧光层16表面之间的夹角。所述第二倾斜角β大于所述第一倾斜角α。所述光吸收层15具有吸收光线的作用。所述光吸收层15的材料可以是塑料或是高分子的材料,其材料本身具有大于70% 的吸光效率,且材料颜色主要为黑色,例如,PPA(Polyphthalamide) 塑料或是环氧树脂(Epoxy) 材料。所述光吸收层15是以成型(Molding)方式形成。所述反射层14的内部设置所述荧光层16, 所述荧光层16覆盖所述LED芯片18。所述荧光层16内可以包含至少一种荧光粉(图中未标示) 。所述荧光层16进一步可以包含有一层透明覆盖层162,所述透明覆盖层162覆盖于所述荧光层16的上表面。所述荧光层16的上表面是为所述LED封装结构10的出光面。
请再参阅图2,是本发明LED封装结构发光使用示意图。所述反射层14环绕于所述LED芯片18周缘,所述LED芯片18通过所述导电线182分别与两个电极122、124达成电性连接。所述电极122、124经通电后,所述LED芯片18可产生向四周发射的光线。所述向四周发射的光线通过所述反射层14的所述第一斜面142多次反射以及对所述荧光层16内部的荧光粉激发发光和混光后,使所述LED封装结构10产生良好的发光饱和度以及颜色对比,并向着所述荧光层16的上表面经过所述透明覆盖层162形成向外界的发射光束X。所述发射光束X的光路径在通过所述第一斜面142后,由于所述第二斜面152的第二倾斜角β大于所述第一斜面142的第一倾斜角α,因此,所述第二斜面152的所述光吸收层15不会对所述发射光束X有任何的影响,有助于所述LED封装结构10维持其发光的质量。即使所述LED封装结构10在小型化而薄化所述反射层14时,所述LED芯片18的光线就算是穿过所述反射层14,也会被所述光吸收层15所吸收,不会有任何内部所述LED芯片18的光线发散到所述LED封装结构10的外部。因此,在运作时,不但不会有光晕现象发生,而且可以维持所述LED封装结构10良好的发光效果。另外,所述LED封装结构10在户外使用时,外界的光线如阳光光束Y会照射在所述LED封装结构10的外部,所述LED封装结构10的外部是由所述反射层14外部包覆的所述光吸收层15覆盖。因此,所述光吸收层15可以直接吸收被照射的所述阳光光束Y,使所述阳光光束Y不会透过所述反射层14照射到所述荧光层16,所述荧光层16就不会因外界光线产生非必要的激发光,所述LED封装结构10发光的效果就可以被维护,能有效解决目前LED封装结构10在户外使用所产生的不良使用效果。
综上,本发明LED封装结构的所述反射层的外部包覆具有所述光吸收层,对于所述LED芯片发射穿透所述反射层的光线以及外界照射的光线具有吸收的效果,同时包覆的所述光吸收层具有倾斜角度较大的所述第二斜面,不会影响所述发射光束的光路径,因此可以稳固所述LED封装结构出光的饱和度、对比色,并可避免光晕现象,从而有效提升所述LED封装结构的发光质量。
另外,本领域技术人员还可在本发明精神内做其它变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。

Claims (9)

1.一种LED封装结构,其包括一个基板、一个反射层、一个光吸收层、一个荧光层以及一个LED芯片,所述基板具有两个电极,用以设置所述LED芯片,并达成电性连接,其特征在于:所述反射层设置于所述基板上,其具有一个第一斜面环绕着所述LED芯片,所述反射层的内部设置所述荧光层,并覆盖所述LED芯片,所述反射层的外部被所述光吸收层所包覆,所述光吸收层具有一个第二斜面并面向所述LED芯片,所述第二斜面的倾斜角大于所述第一斜面的倾斜角,所述光吸收层吸收LED芯片侧向入射至其上的光线。
2.如权利要求1所述的LED封装结构,其特征在于:所述两个电极,由所述基板具有的一个顶面延伸至所述顶面相对的底面,所述电极一个为正电极,一个为负电极。
3.如权利要求1所述的LED封装结构,其特征在于:所述LED芯片,由所述两个电极中的一个电极承载,并通过导电线电性连接。
4.如权利要求1所述的LED封装结构,其特征在于:所述第一斜面的倾斜角,是所述第一斜面与所述基板上的所述电极表面之间的夹角。
5.如权利要求4所述的LED封装结构,其特征在于:所述第一斜面的倾斜角,是为90度至150度之间。
6.如权利要求1所述的LED封装结构,其特征在于:所述反射层,具有反射光线的作用,其材料是高分子材料。
7.如权利要求1所述的LED封装结构,其特征在于:所述第二斜面的倾斜角,是所述第二斜面与所述荧光层表面之间的夹角。
8.如权利要求1所述的LED封装结构,其特征在于:所述光吸收层,以成型的方式形成,具有吸收光线的作用,其材料是高分子的材料。
9.如权利要求1所述的LED封装结构,其特征在于:所述荧光层,进一步包含有一层透明覆盖层,所述透明覆盖层覆盖于所述荧光层的上表面,所述荧光层包含至少一种荧光粉。
CN201110073542.8A 2011-03-25 2011-03-25 Led封装结构 Expired - Fee Related CN102694103B (zh)

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TW100114355A TW201240154A (en) 2011-03-25 2011-04-25 Structure of the LED package
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CN102694103A (zh) 2012-09-26
US20120241790A1 (en) 2012-09-27
US8564003B2 (en) 2013-10-22

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