CN102683543B - Led封装结构 - Google Patents
Led封装结构 Download PDFInfo
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- CN102683543B CN102683543B CN201110061860.2A CN201110061860A CN102683543B CN 102683543 B CN102683543 B CN 102683543B CN 201110061860 A CN201110061860 A CN 201110061860A CN 102683543 B CN102683543 B CN 102683543B
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- 230000008033 biological extinction Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 claims 1
- 239000004033 plastic Substances 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 7
- 239000004954 Polyphthalamide Substances 0.000 description 6
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- 229920000647 polyepoxide Polymers 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
本发明提供一种LED封装结构,其包括一个基板、一个反射层、一个光吸收层、一个覆盖层以及一个LED芯片。所述基板具有两个电极,用以设置所述LED芯片,并达成电性连接。所述反射层设置于所述基板上,环绕着所述LED芯片。所述反射层的内部设置所述覆盖层,覆盖所述LED芯片,所述反射层的外部环绕所述光吸收层。本发明的所述光吸收层可吸收所述LED芯片穿过所述反射层的光线,以维护发光的饱和度、对比颜色并避免光晕现象。
Description
技术领域
本发明涉及一种LED封装结构,尤其涉及一种具有较佳出光效果的LED封装结构。
背景技术
LED产业是近几年最受瞩目的产业之一,发展至今,LED产品已具有节能、省电、高效率、反应时间快、寿命周期时间长、且不含汞、具有环保效益等优点,然而LED高功率产品为获得所需要的亮度与颜色,在LED封装结构中具有一个反射层设置。所述反射层通常是使用塑料制成,例如,PPA(Polyphthalamide)或是其它高热塑性的塑料。这样的塑料在产品小型化而薄化反射层时,LED芯片的光容易穿过所述反射层,因此不但会造成产品出光的饱和度不足,还会因为光线穿过所述反射层的折射关系,使得LED封装结构产生光晕现象。目前改善的方式,有在所述反射层的外部覆盖一个金属层或是再加厚所述反射层,这些改善的方式会增加LED封装结构的制造成本,同时不利于小型化的产品设计发展。
发明内容
有鉴于此,有必要提供一种可维护发光饱和度、避免光晕现象的LED封装结构。
一种LED封装结构,其包括一个基板、一个反射层、一个光吸收层、一个覆盖层以及一个LED芯片。所述基板具有两个电极,用以设置所述LED芯片, 并达成电性连接。所述反射层设置于所述基板上, 环绕着所述LED芯片。所述反射层的内部设置所述覆盖层, 覆盖所述LED芯片,所述反射层的外部环绕所述光吸收层。
上述LED封装结构,由于所述反射层的外部环绕具有所述光吸收层,使所述反射层内部的所述LED芯片穿透所述反射层的光,可直接被所述光吸收层予以吸收,不会在所述LED封装结构的外部产生光晕现象,进而可以维持所述LED封装结构的光的饱和度以及对比颜色,改善目前所存在的缺点。
附图说明
图1是本发明LED封装结构的剖视图。
图2是本发明LED封装结构反射层与光吸收层第一实施方式的俯视图。
图3是本发明LED封装结构反射层与光吸收层第二实施方式的俯视图。
主要元件符号说明
LED封装结构 | 10 |
基板 | 12 |
顶面 | 120 |
底面 | 1202 |
电极 | 122、124 |
凹槽 | 1220 |
反射层 | 14 |
光吸收层 | 15 |
覆盖层 | 16 |
LED芯片 | 18 |
导电线 | 182 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合附图对本发明作一具体介绍。
请参阅图1,所示为本发明LED封装结构10,包括一个基板12、一个反射层14、一个光吸收层15、一个覆盖层16以及一个LED芯片18。所述基板12具有两个电极122、124,所述电极122、124由所述基板12具有的一个顶面120延伸至所述顶面120相对的底面1202。所述两个电极122、124一个为正电极,一个为负电极。所述两个电极122、124的其中一个所述电极122上承载所述LED芯片18,所述LED芯片18通过导电线182分别与所述电极122、124达成电性连接。所述电极122、124经通电后,所述LED芯片18可产生向四周发射的光线。
所述反射层14设置于所述基板12的顶面120上,并环绕于所述LED芯片18周缘,在所述顶面120上形成一个凹槽1220。所述反射层14内部的所述凹槽1220内设置所述覆盖层16, 所述覆盖层16覆盖所述LED芯片18。所述覆盖层16通常为透明胶体,所述透明胶体内可以包含有荧光粉(图中未标示) 。所述反射层14具有反射光线的作用,其材料可以是塑料或是高分子材料,例如,PPA(Polyphthalamide) 塑料或是环氧树脂(Epoxy) 材料。所述反射层14的外部环绕所述光吸收层15,所述光吸收层15具有吸收光线的作用。所述光吸收层15的材料可以是塑料或是高分子的材料,其材料本身具有大于70% 的吸光效率,且材料颜色主要为黑色,例如,PPA(Polyphthalamide) 塑料或是环氧树脂(Epoxy) 材料。
上述LED封装结构10,所述反射层14的外部具有所述光吸收层15环绕,在所述反射层14内部的所述LED芯片18向四周发射的光线,会受外围所述反射层14的反射光线作用,而增强所述LED封装结构10 发光的效果。即使所述LED封装结构10在小型化而薄化所述反射层14时,所述LED芯片18的光线就算是穿过所述反射层14,也会被所述光吸收层15所吸收,不会有任何内部所述LED芯片18的光线散发到所述LED封装结构10的外部。因此,所述LED封装结构10在运作时,不但不会有光晕现象发生,而且可以维持所述LED封装结构10良好的发光饱和度。
请再参阅图2,是本发明LED封装结构反射层与光吸收层第一实施方式的俯视图。所述反射层14以及所述光吸收层15是以两次的成型(Molding)方式,形成在所述基板12的顶面120上。所述反射层14成型后,其内部形成的所述凹槽1220环绕于所述LED芯片18周缘,所述LED芯片18位于所述凹槽1220的底部,并设置在其中一个所述电极122上,再通过所述导电线182分别与两个电极122、124达成电性连接。所述凹槽1220的内部设置所述覆盖层(图中未标号), 所述覆盖层覆盖所述LED芯片18。所述反射层14以及所述光吸收层15以成型(Molding)方式形成的所述LED封装结构10,其具有较佳的机械强度,同时所述反射层14以及所述光吸收层15元件的厚度容易控制,有助于所述LED封装结构10在维持良好的发光饱和度以及颜色对比下,进行产品小型化的设计。
请参阅图3,所示为本发明LED封装结构反射层与光吸收层第二实施方式的俯视图。所述第二实施方式的所述LED封装结构10,相较于所述第一实施方式的所述LED封装结构10,基本上的构造以及所述反射层14成型的方式相同于所述第一实施方式就不再赘述。不同在于,所述光吸收层15是以贴覆(Pasting)或是涂布(Coating)的方式固定在所述反射层14的外部。所述光吸收层15贴覆或是涂布的固定方式具有制程容易而且成本低的效能。所述光吸收层15同样能防止所述LED芯片18发射出的光线外漏所产生的光晕现象,可以有效解决目前LED封装结构10小型化而薄化反射层14所产生出光饱和度、对比色不佳的问题。
综上,本发明LED封装结构的所述反射层的外部环绕具有所述光吸收层,对于所述LED芯片发射穿透过所述反射层的光线具有吸收的效果,因此可以稳固所述LED封装结构出光的饱和度、对比色,并可避免光晕现象,从而有效提升所述LED封装结构的发光质量。
另外,本领域技术人员还可在本发明精神内做其它变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (8)
1.一种LED封装结构,其包括一个基板、一个反射层、一个覆盖层以及一个LED芯片,所述基板具有两个电极,用以设置所述LED芯片,并达成电性连接,所述反射层设置于所述基板上,环绕着所述LED芯片,所述反射层的内部设置所述覆盖层,覆盖所述LED芯片,其特征在于:还包括一光吸收层,所述光吸收层环绕于反射层的外周缘,并且所述反射层与光吸收层是以两次成型的方式形成在所述基板的顶面上。
2.如权利要求1所述的LED封装结构,其特征在于:所述两个电极,由所述基板具有的一个顶面延伸至所述顶面相对的底面,所述电极一个为正电极,一个为负电极。
3.如权利要求1所述的LED封装结构,其特征在于:所述LED芯片,由所述两个电极中的一个电极承载,并通过导电线与所述电极电性连接。
4.如权利要求1所述的LED封装结构,其特征在于:所述反射层,设置于所述基板的顶面上,在所述顶面上形成一个凹槽。
5.如权利要求1所述的LED封装结构,其特征在于:所述反射层,具有反射光线的作用,其材料是高分子材料。
6.如权利要求1所述的LED封装结构,其特征在于:所述光吸收层,具有吸收光线的作用,其材料是高分子材料。
7.如权利要求6所述的LED封装结构,其特征在于:所述光吸收层材料,具有大于70%的吸光效率。
8.如权利要求1所述的LED封装结构,其特征在于:所述覆盖层,为透明胶体,所述透明胶体内包含有荧光粉。
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CN201110061860.2A CN102683543B (zh) | 2011-03-15 | 2011-03-15 | Led封装结构 |
TW100114193A TWI469403B (zh) | 2011-03-15 | 2011-04-25 | Led封裝結構 |
US13/288,042 US8569781B2 (en) | 2011-03-15 | 2011-11-03 | LED package with light-absorbing layer |
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CN103199183B (zh) * | 2013-04-08 | 2016-01-27 | 厦门市三安光电科技有限公司 | 一种提高垂直发光二极管芯片亮度的封装结构 |
TWI506823B (zh) * | 2013-09-16 | 2015-11-01 | Lextar Electronics Corp | 發光裝置之封裝結構及其製造方法 |
CN103762292A (zh) * | 2014-01-17 | 2014-04-30 | 桂林电子科技大学 | 一种使用低反光的黑色emc塑封材料达到高反光效果的led封装工艺 |
EP3130011A4 (en) * | 2014-04-07 | 2018-02-28 | Crystal Is, Inc. | Ultraviolet light-emitting devices and methods |
JP6493348B2 (ja) * | 2016-09-30 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
CN107994109A (zh) * | 2016-10-27 | 2018-05-04 | 佛山市国星光电股份有限公司 | 一种cob显示模组及其制造方法 |
CN110969959B (zh) * | 2018-09-28 | 2022-06-10 | 深圳光峰科技股份有限公司 | 一种led显示屏 |
JP6923820B2 (ja) * | 2018-10-31 | 2021-08-25 | 日亜化学工業株式会社 | パッケージの製造方法および発光装置の製造方法 |
TWI809087B (zh) * | 2019-04-11 | 2023-07-21 | 晶元光電股份有限公司 | 發光二極體封裝 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1421936A (zh) * | 2001-11-28 | 2003-06-04 | 国联光电科技股份有限公司 | 具有透明基板覆晶式发光二极体晶粒的高亮度发光二极体 |
Family Cites Families (5)
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GB1597712A (en) * | 1977-01-17 | 1981-09-09 | Plessey Co Ltd | Display devices |
AT410266B (de) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
US7923740B2 (en) * | 2005-03-01 | 2011-04-12 | Kabushiki Kaisha Toshiba | Light emission device |
JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
US8471283B2 (en) * | 2008-02-25 | 2013-06-25 | Kabushiki Kaisha Toshiba | White LED lamp, backlight, light emitting device, display device and illumination device |
-
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CN1421936A (zh) * | 2001-11-28 | 2003-06-04 | 国联光电科技股份有限公司 | 具有透明基板覆晶式发光二极体晶粒的高亮度发光二极体 |
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TW201238100A (en) | 2012-09-16 |
TWI469403B (zh) | 2015-01-11 |
US20120235193A1 (en) | 2012-09-20 |
US8569781B2 (en) | 2013-10-29 |
CN102683543A (zh) | 2012-09-19 |
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