TWI469403B - Led封裝結構 - Google Patents
Led封裝結構 Download PDFInfo
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- TWI469403B TWI469403B TW100114193A TW100114193A TWI469403B TW I469403 B TWI469403 B TW I469403B TW 100114193 A TW100114193 A TW 100114193A TW 100114193 A TW100114193 A TW 100114193A TW I469403 B TWI469403 B TW I469403B
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- package structure
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- reflective layer
- led package
- light absorbing
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- 239000000758 substrate Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 239000004954 Polyphthalamide Substances 0.000 claims description 10
- 229920006375 polyphtalamide Polymers 0.000 claims description 10
- 239000004033 plastic Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 4
- -1 for example Substances 0.000 claims description 4
- 239000000088 plastic resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000002861 polymer material Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 125000001475 halogen functional group Chemical group 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
本發明涉及一種LED封裝結構,尤其涉及一種具有較佳出光效果的LED封裝結構。
LED產業是近幾年最受矚目的產業之一,發展至今,LED產品已具有節能、省電、高效率、反應時間快、壽命週期時間長、且不含汞、具有環保效益等優點。然而LED高功率產品為獲得所需要的亮度與顏色,在LED封裝結構中具有一個反射層設置。該反射層通常是使用塑膠製成,例如,PPA(Polyphthalamide)或是其他高熱塑性的塑膠。這樣的塑膠在產品小型化而薄化反射層時,LED晶片的光容易穿過該反射層,因此不但會造成產品出光的飽和度不足,還會因為光線穿過該反射層的折射關係,使得LED封裝結構產生光暈現象。目前改善的方式,有在所述反射層的外部覆蓋一金屬層或是再加厚該反射層,這些改善的方式會增加LED封裝結構的製造成本,同時不利於小型化的產品設計發展。
有鑒於此,有必要提供一種可維護發光飽和度、避免光暈現象的LED封裝結構。
一種LED封裝結構,其包括一基板、一反射層、一光吸收層、一覆蓋層以及一LED晶片。該基板具有兩電極,用以設置該LED晶片
,並達成電性連接。該反射層設置於該基板上,環繞著該LED晶片。該反射層的內部設置該覆蓋層,覆蓋該LED晶片,該反射層的外部環繞該光吸收層。
上述的LED封裝結構,由於該反射層的外部環繞具有該光吸收層,使該反射層內部的該LED晶片穿透該反射層的光,可直接被該光吸收層予以吸收,不會在該LED封裝結構的外部產生光暈現象,進而可以維持該LED封裝結構的光的飽和度以及對比顏色,改善目前所存在的缺點。
10‧‧‧LED封裝結構
12‧‧‧基板
120‧‧‧頂面
1202‧‧‧底面
122、124‧‧‧電極
1220‧‧‧凹槽
14‧‧‧反射層
15‧‧‧光吸收層
16‧‧‧覆蓋層
18‧‧‧LED晶片
182‧‧‧導電線
圖1是本發明LED封裝結構的剖視圖。
圖2是本發明LED封裝結構反射層與光吸收層設置的第一實施例俯視圖。
圖3是本發明LED封裝結構反射層與光吸收層設置的第二實施例俯視圖。
下面將結合附圖對本發明作一具體介紹。
請參閱圖1,本發明LED封裝結構10,包括一基板12、一反射層14、一光吸收層15、一覆蓋層16以及一LED晶片18。
該基板12具有兩電極122、124,該電極122、124由該基板12具有的一頂面120延伸至該頂面120所相對的底面1202。該兩電極122、124一為正電極,一為負電極。該兩電極122、124的其中該一電極122上承載該LED晶片18,該LED晶片18通過導電線182分別與該電極122、124達成電性連接。該電極122、124經通電後,該
LED晶片18可產生向四周發射的光線。
該反射層14設置於該基板12的頂面120上,並環繞於該LED晶片18周緣,在該頂面120上形成一凹槽1220。該反射層14內部的該凹槽1220內設置該覆蓋層16,該覆蓋層16覆蓋該LED晶片18。該覆蓋層16通常為透明膠體,該透明膠體內可以包含有螢光粉(圖中未標示)。該反射層14具有反射光線的作用,其材料可以是塑膠或是高分子材料,例如,PPA(Polyphthalamide)塑膠或是環氧樹脂(Epoxy)材料。該反射層14的外部環繞該光吸收層15,該光吸收層15具有吸收光線的作用。該光吸收層15的材料可以是塑膠或是高分子的材料,其材料本身具有大於70%的吸光效率,且材料顏色主要為黑色,例如,PPA(Polyphthalamide)塑膠或是環氧樹脂(Epoxy)材料。
上述LED封裝結構10,該反射層14的外部具有該光吸收層15環繞,在該反射層14內部的該LED晶片18向四周發射的光線,會受週邊該反射層14的反射光線作用,而增強該LED封裝結構10發光的效果。即使該LED封裝結構10在小型化而薄化該反射層14時,該反射層14仍然具有反射光線的作用,而該LED晶片18的光線就算是穿過該薄化後的反射層14,也會被該光吸收層15所吸收,不會有任何該LED晶片18的光線散射到該LED封裝結構10的外部。因此,該LED封裝結構10在運作時,不但不會有光暈現象發生,而且可以維持該LED封裝結構10良好的發光飽和度。
請再參閱圖2,是本發明LED封裝結構反射層與光吸收層第一實施例的俯視圖。該反射層14以及該光吸收層15是以兩次的成型(Molding)方式,形成在該基板12的頂面120上。該反射層14成型
後,其內部形成的該凹槽1220環繞於該LED晶片18周緣,該LED晶片18位於該凹槽1220的底部,並設置在其中該一電極122上,再通過該導電線182分別與該兩電極122、124達成電性連接。該凹槽1220的內部設置該覆蓋層(圖中未標號),該覆蓋層覆蓋該LED晶片18。該反射層14以及該光吸收層15以成型(Molding)方式形成的該LED封裝結構10,其具有較佳的機械強度,同時該反射層14以及該光吸收層15元件的厚度容易控制,有助於該LED封裝結構10在維持良好的發光飽和度以及顏色對比下,進行產品小型化的設計。
請參閱圖3,所示為本發明LED封裝結構反射層與光吸收層第二實施例的俯視圖。該第二實施例的該LED封裝結構10,相較於該第一實施例的該LED封裝結構10,基本上的構造以及該反射層14成型的方式均相同於該第一實施例就不再贅述。不同在於,該光吸收層15是以貼覆(Pasting)或是塗布(Coating)的方式固定在該反射層14的外部。該光吸收層15以貼覆或是塗布的固定方式形成,具有製造容易而且成本低的效能。該光吸收層15同樣能防止該LED晶片18發射出的光線外漏所產生的光暈現象,並可以有效解決目前LED封裝結構10小型化而薄化反射層14所產生出光飽和度、對比色不佳的問題。
綜上,本發明LED封裝結構的該反射層的外部環繞具有該光吸收層,對於該LED晶片發射穿透過該反射層的光線具有吸收的效果,因此可避免光暈現象,並可以穩定該LED封裝結構出光的飽和度、對比色,從而有效提升該LED封裝結構的發光品質。
應該指出,上述實施例僅為本發明的較佳實施方式,本領域技術
人員還可在本發明精神內做其他變化。這些依據本發明精神所做的變化,都應包含在本發明所要求保護的範圍之內。
10‧‧‧LED封裝結構
12‧‧‧基板
120‧‧‧頂面
1202‧‧‧底面
122、124‧‧‧電極
1220‧‧‧凹槽
14‧‧‧反射層
15‧‧‧光吸收層
16‧‧‧覆蓋層
18‧‧‧LED晶片
182‧‧‧導電線
Claims (9)
- 一種LED封裝結構,其包括一基板、一反射層、一覆蓋層以及一LED晶片,該基板具有兩電極,用以設置該LED晶片,並達成電性連接,該反射層設置於該基板上,環繞著該LED晶片,該反射層的內部設置該覆蓋層,覆蓋該LED晶片,其改良在於:還包括一光吸收層,所述光吸收層環繞於所述的反射層的外周緣,並且該反射層與光吸收層是以兩次成型的方式形成在該基板的頂面上。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該兩電極,由該基板具有的一頂面延伸至該頂面相對的底面,該電極一為正電極,一為負電極。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該LED晶片,由該兩電極中的一電極承載,並通過導電線與該電極電性連接。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該反射層,設置於該基板的頂面上,在該頂面上形成一凹槽。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該反射層,具有反射光線的作用,其材料是塑膠或是高分子材料,例如,PPA(Polyphthalamide)塑膠或是環氧樹脂材料。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該光吸收層,具有吸收光線的作用,其材料是塑膠或是高分子的材料,例如,PPA(Polyphthalamide)塑膠或是環氧樹脂材料。
- 如申請專利範圍第6項所述的LED封裝結構,其中,該光吸收層材料,具有大於70%的吸光效率,該材料顏色主要為黑色。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該覆蓋層,為透明膠 體,該透明膠體內可以包含有螢光粉。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該反射層與光吸收層中,該反射層以成型的方式形成,該光吸收層是以貼覆或是塗布的方式固定在該反射層的外部。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110061860.2A CN102683543B (zh) | 2011-03-15 | 2011-03-15 | Led封装结构 |
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TW201238100A TW201238100A (en) | 2012-09-16 |
TWI469403B true TWI469403B (zh) | 2015-01-11 |
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TW100114193A TWI469403B (zh) | 2011-03-15 | 2011-04-25 | Led封裝結構 |
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US (1) | US8569781B2 (zh) |
CN (1) | CN102683543B (zh) |
TW (1) | TWI469403B (zh) |
Families Citing this family (9)
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CN103199183B (zh) * | 2013-04-08 | 2016-01-27 | 厦门市三安光电科技有限公司 | 一种提高垂直发光二极管芯片亮度的封装结构 |
TWI506823B (zh) * | 2013-09-16 | 2015-11-01 | Lextar Electronics Corp | 發光裝置之封裝結構及其製造方法 |
CN103762292A (zh) * | 2014-01-17 | 2014-04-30 | 桂林电子科技大学 | 一种使用低反光的黑色emc塑封材料达到高反光效果的led封装工艺 |
EP3130011A4 (en) * | 2014-04-07 | 2018-02-28 | Crystal Is, Inc. | Ultraviolet light-emitting devices and methods |
JP6493348B2 (ja) * | 2016-09-30 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
CN107994109A (zh) * | 2016-10-27 | 2018-05-04 | 佛山市国星光电股份有限公司 | 一种cob显示模组及其制造方法 |
CN110969959B (zh) * | 2018-09-28 | 2022-06-10 | 深圳光峰科技股份有限公司 | 一种led显示屏 |
JP6923820B2 (ja) * | 2018-10-31 | 2021-08-25 | 日亜化学工業株式会社 | パッケージの製造方法および発光装置の製造方法 |
TWI809087B (zh) * | 2019-04-11 | 2023-07-21 | 晶元光電股份有限公司 | 發光二極體封裝 |
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CN1194424C (zh) * | 2001-11-28 | 2005-03-23 | 国联光电科技股份有限公司 | 具有透明基板倒装式发光二极管芯片的高亮度发光二极体 |
WO2006093011A1 (ja) * | 2005-03-01 | 2006-09-08 | Kabushiki Kaisha Toshiba | 発光装置 |
US8471283B2 (en) * | 2008-02-25 | 2013-06-25 | Kabushiki Kaisha Toshiba | White LED lamp, backlight, light emitting device, display device and illumination device |
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2011
- 2011-03-15 CN CN201110061860.2A patent/CN102683543B/zh active Active
- 2011-04-25 TW TW100114193A patent/TWI469403B/zh active
- 2011-11-03 US US13/288,042 patent/US8569781B2/en active Active
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TW201238100A (en) | 2012-09-16 |
US8569781B2 (en) | 2013-10-29 |
CN102683543A (zh) | 2012-09-19 |
US20120235193A1 (en) | 2012-09-20 |
CN102683543B (zh) | 2015-08-12 |
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