CN102646773B - Led封装结构及制程 - Google Patents

Led封装结构及制程 Download PDF

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Publication number
CN102646773B
CN102646773B CN201110041287.9A CN201110041287A CN102646773B CN 102646773 B CN102646773 B CN 102646773B CN 201110041287 A CN201110041287 A CN 201110041287A CN 102646773 B CN102646773 B CN 102646773B
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led chip
support plate
encapsulation structure
bearing surface
load
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CN102646773A (zh
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林新强
曾文良
陈滨全
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to CN201110041287.9A priority Critical patent/CN102646773B/zh
Priority to TW100113634A priority patent/TWI466332B/zh
Priority to US13/278,113 priority patent/US20120211786A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

本发明提供一种LED封装结构,包括一个基板、一个LED芯片以及一个覆盖层。所述基板具有至少两个电极以及一个载板,所述载板具有一个承载表面,所述承载表面高于所述基板的顶面,并用以对应设置所述LED芯片。所述LED芯片与所述电极电连接,并通过所述覆盖层包覆。本发明所述承载表面高于所述基板顶面并对应所述LED芯片,使其发出的光线可直接穿过所述覆盖层,从而可提高所述LED芯片的发光角度。

Description

LED封装结构及制程
技术领域
本发明涉及一种LED封装结构,尤其涉及一种具有较宽光场的LED封装结构。
背景技术
LED产业是近几年最受瞩目的产业之一,发展至今,LED产品已具有节能、省电、高效率、反应时间快、寿命周期时间长、且不含汞、具有环保效益等优点。然而一般LED封装结构中的LED芯片设置于基板的顶面上,所述LED芯片发出的光线中,仅有一半多一点(约百分之五十六左右)可穿越所述LED芯片表面发射出去,其余的光线大都直接被LED封装结构吸收或是LED芯片内部的全反射而丧失。LED高功率产品为提高获得所需要亮度,通常仅针对LED芯片的光萃取率作改善,其解决的方式不外乎有两种,一是在所述LED芯片磊晶前增设光萃取结构层,一是在所述LED芯片磊晶后对磊晶结构表面进行粗糙化,以破坏磊晶结构的内部全反射作用,从而减少光的损失。但是,这样的解决方式会增加制程的复杂性且花费昂贵,并非经济方便的改善方式。
发明内容
有鉴于此,有必要提供一种结构简易、发光光场宽广的LED封装结构。
一种LED封装结构,包括一个基板、一个LED芯片以及一个覆盖层。所述基板具有至少两个电极以及一个载板,所述载板具有一个承载表面,所述承载表面高于所述基板的顶面,并用以对应设置所述LED芯片。所述LED芯片与所述电极电连接,并通过所述覆盖层包覆。
在上述的LED封装结构中,由于所述LED芯片的设置位置高于所述基板的顶面,且所述承载表面对应所述LED芯片,使所述LED芯片发出的光线不受所述基板的阻挡或吸收,可穿越所述LED芯片表面的发散角度更加宽广,从而可以增加所述LED芯片发光的光场而提高所述LED封装结构的亮度,其结构简单、制造成本低。
附图说明
图1是本发明LED封装结构第一实施方式的组合剖视图。
图2是图1封装结构的载板与LED芯片的组合剖视图。
图3是图2LED芯片与载板组合的部分放大剖视图。
图4是本发明LED封装结构第二实施方式的剖视图。
图5是本发明LED封装结构第三实施方式的剖视图。
主要元件符号说明
封装结构    10、20、30
基板        12、22
顶面        122、222
底面        124、224、324
电极        126、226、38
载板        128、228、32
承载表面    1282、2282、322
LED芯片     14、24、34
发光层      142
覆盖层      16、26、36
导线        18、28、382
反射杯      200
出光角度    θ
夹角        ψ
高度        H
距离        D
具体实施方式
下面将结合附图对本发明作一具体介绍。
请参阅图1,所示为本发明LED封装结构第一实施方式的组合剖视图,所述LED封装结构10,包括一个基板12、一个LED芯片14以及一个覆盖层16。所述基板包含有一个顶面122以及一个底面124,并具有至少两个电极126以及一个载板128,所述电极126以及所述载板128均自所述基板12的顶面122延伸至所述基板12的底面124。所述载板128具有一个承载表面1282,所述承载表面1282高于所述基板12的顶面122,并用以对应设置所述LED芯片14。所述LED芯片14与所述电极126之间具有导线18以达成电连接,并通过所述覆盖层16包覆。所述覆盖层16为透明材质并且可以包含具有荧光粉。所述LED芯片14在所述承载表面1282上,与所述基板12的顶面122间具有一定距离,使所述LED芯片14发光的出光角度较不会被所述基板12阻挡或吸收,相较于目前设置于所述基板12顶面122的LED芯片14,本实施方式的所述LED芯片14具有更宽广的出光角度。所述LED芯片14发光直接穿越所述LED芯片14表面的出光角度θ大约等于二百四十度(如图2所标示),所述LED芯片14的出光角度θ可以依据所述LED芯片14与所述载板128承载表面1282对应设置的关系获得。所述LED芯片14与所述载板128承载表面1282对应设置的关系式为tanψ≤H/D,其中ψ为所述LED芯片14与所述载板128承载表面1282之间的夹角,H为所述LED芯片14内部发光层142到达所述LED芯片14底面的高度,D为所述LED芯片14底面侧边与所述载板128侧边之间的距离(如图3中的放大图所标示)。所述LED芯片14的出光角度θ扩大,使所述LED芯片14的光场更宽,从而使得所述LED封装结构10的亮度可以提高。
请再参阅图4,是本发明LED封装结构20第二实施方式的剖视图。所述LED封装结构20,包括一个基板22、一个LED芯片24以及一个覆盖层26,相同于所述LED封装结构10,所述基板22包含有一个顶面222以及一个底面224,并具有至少两个电极226以及一个载板228。所述载板228具有一个承载表面2282,所述承载表面2282高于所述基板22的顶面222,并用以对应设置所述LED芯片24。所述LED芯片24与所述电极226之间具有导线28以达成电连接,并通过所述覆盖层26包覆。不同在于,所述基板22的顶面222具有一个反射杯200。所述反射杯200环绕所述LED芯片24罩设,使具有宽光场发光的所述LED芯片24发出的光线,能集中由所述反射杯200开口处的所述覆盖层26发射,从而更加提升所述LED封装结构20的发光亮度。
最后,请再参阅图5的LED封装结构30,包括一个载板32、一个LED芯片34、一个覆盖层36以及至少两个电极38。不同于第一实施方式的所述LED封装结构10,本第三实施方式的LED封装结构30并不具有所述基板12。所述载板32具有一个承载表面322以及一个底面324。所述承载表面322与所述底面324间隔具有一定距离,使所述载板32具有一定的高度。所述承载表面322用以对应设置所述LED芯片34,所述LED芯片34与所述电极38之间具有导线382以达成电连接,并通过所述覆盖层36包覆所述LED芯片34及其电连接的所述电极38和所述载板32。所述载板32也可设置在其中一个所述电极38上(图中未标示),使所述LED芯片34的电连接以及所述LED封装结构30的封装运作更加便捷。所述LED芯片34通过在对应的所述承载表面322上设置,同样可具有宽光场的出光角度,使所述LED封装结构30的发光亮度更加提升、结构简化。
综上,本发明LED封装结构,所述LED芯片14、24以及34对应所述载板128、228、32的承载表面1282、2282、322上设置,使所述LED芯片14、24以及34在所述LED封装结构10、20、30中的位置被提高,发光的出光角度更宽广,从而可以最简易及低成本的方式提升LED封装结构的发光亮度。
另外,本领域技术人员还可在本发明精神内做其它变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。

Claims (9)

1.一种LED封装结构,包括一个基板、一个LED芯片以及一个覆盖层,所述基板具有至少两个电极以及一个载板,所述载板具有一个承载表面,所述承载表面高于所述基板的顶面,并用以对应设置所述LED芯片,所述LED芯片与所述电极电连接,并通过所述覆盖层包覆,所述承载表面设置所述LED芯片的对应关系符合下列关系式:tanψ≦H/D,其中ψ为所述LED芯片与所述承载表面之间的夹角,H为所述LED芯片内部具有的发光层到达所述LED芯片底面的高度,D为所述LED芯片底面侧边与所述载板侧边之间的距离。
2.如权利要求1所述的LED封装结构,其特征在于:所述基板包含有一个顶面以及一个底面,所述电极以及所述载板均自所述基板的顶面延伸至所述基板的底面。
3.如权利要求2所述的LED封装结构,其特征在于:所述LED芯片发光层的出光角度等于二百四十度。
4.如权利要求1所述的LED封装结构,其特征在于:所述基板的顶面具有一个反射杯,所述反射杯环绕所述LED芯片罩设。
5.如权利要求1所述的LED封装结构,其特征在于:所述覆盖层为透明材质并且可以包含具有荧光粉。
6.一种LED封装结构,包括一个载板、一个LED芯片、一个覆盖层以及至少两个电极,所述载板具有一个承载表面,所述承载表面对应设置所述LED芯片,所述LED芯片与所述电极电连接,并通过所述覆盖层包覆,所述承载表面设置所述LED芯片的对应关系符合下列关系式:tanψ≦H/D,其中ψ为所述LED芯片与所述承载表面之间的夹角,H为所述LED芯片内部具有的发光层到达所述LED芯片底面的高度,D为所述LED芯片底面侧边与所述载板侧边之间的距离。
7.如权利要求6所述的LED封装结构,其特征在于:所述载板具有一个底面,所述承载表面与所述底面间隔具有一定距离,使所述载板具有一定的高度。
8.如权利要求6所述的LED封装结构,其特征在于:所述载板设置在其中一个所述电极上。
9.如权利要求6所述的LED封装结构,其特征在于:所述覆盖层包覆所述LED芯片及其电连接的所述电极和所述载板。
CN201110041287.9A 2011-02-17 2011-02-17 Led封装结构及制程 Active CN102646773B (zh)

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CN201110041287.9A CN102646773B (zh) 2011-02-17 2011-02-17 Led封装结构及制程
TW100113634A TWI466332B (zh) 2011-02-17 2011-04-20 Led封裝結構
US13/278,113 US20120211786A1 (en) 2011-02-17 2011-10-20 Led package structure with a wide optical field

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI321857B (en) * 2006-07-21 2010-03-11 Epistar Corp A light emitting device
TWI449221B (zh) * 2009-01-16 2014-08-11 Everlight Electronics Co Ltd 發光二極體封裝結構及其製造方法
KR101064026B1 (ko) * 2009-02-17 2011-09-08 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping

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CN102646773A (zh) 2012-08-22
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TWI466332B (zh) 2014-12-21

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