TW201812988A - 具有多區溫度控制及多重清潔能力的基座 - Google Patents

具有多區溫度控制及多重清潔能力的基座 Download PDF

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TW201812988A
TW201812988A TW106134685A TW106134685A TW201812988A TW 201812988 A TW201812988 A TW 201812988A TW 106134685 A TW106134685 A TW 106134685A TW 106134685 A TW106134685 A TW 106134685A TW 201812988 A TW201812988 A TW 201812988A
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陳興隆
楊章喬
譚亞歷克斯
譚艾利沙
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美商應用材料股份有限公司
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Abstract

用於一半導體製程處理設備的基板支撐組件揭示於此。該等組件可包括一基座及與該基座連結的一主桿。該基座可被配置以提供多重區域，該多重區域具有獨立控制的溫度。每一區域可包括一流體通道，藉由循環一溫度控制流體，以在該區域內提供一實質上均勻的溫度控制，該溫度控制流體接收自該主桿內之內通道並傳送回該內通道。該等流體通道可包括多重部分，該多重部分設置於一平行反向流安設方式中。該基座也可包括流體清潔通道，該等清潔通道可被配置於該基座的該等區域間以提供熱隔絕。

Description

具有多區溫度控制及多重清潔能力的基座
相關申請案之相互參照
本申請案主張2012年7月18日申請之美國臨時申請案第61/673,067號，標題為「具有多區溫度控制及多重清潔能力的基座（PEDESTAL WITH MULTI-ZONE TEMPERATURE CONTROL AND MULTIPLE PURGE CAPABILITIES）」的優先權。茲將該案全部內容以引用之方式併於本案中，以為各目的之用。
本技術關於用於半導體製造的元件及裝置。並且特別是關於基板基座組件與其它半導體製程處理設備。
積體電路可由在基板表面產生複雜圖案材料層的製程處理而製造。在基板上產生圖案材料需要用於成型及移除材料的控制方法。該等製程處理發生的溫度可能會直接地衝擊最終的產品。在製程處理過程中，基板溫度通常與支撐基板的組件被控制與維持著。溫度波動可跨越支撐組件的表面或通過支撐組件的深度發生，也可創造跨越基板的溫度地帶或區域。該等變化溫度的區域可能影響執行於或執行至基板的製程處理，其可通常降低沉積薄膜或沿基板蝕刻結構的均勻性。依照沿基板表面的變異性程度，肇因於由各種應用產生的不一致性，設備失效可能會發生。
此外，容置於半導體製程處理腔室內的結構可能會被執行於該腔室內的製程處理所影響。舉例而言，於腔室內沉積的材料可沉積於該腔室內的設備上，如同於基板本身一般。因而，對於此等及其它因素，在半導體製程處理腔室中改善的設備與組件，存有著需求。此等及其它需求藉本技術而獲致處理。
用於一半導體製程處理設備的基板支撐組件揭示於此。該等組件可包括一基座及與該基座連結的一主桿。該基座可被配置以提供多重區域，該多重區域具有獨立控制的溫度。每一區域可包括一流體通道，藉由循環一溫度控制流體，以在該區域內提供一實質上均勻的溫度控制，該溫度控制流體接收自該主桿內之內通道並傳送回該等內通道。該等流體通道可包括多重部分，該多重部分設置於一平行反向流安設方式中。該基座也可包括流體清潔通道，該等清潔通道可被配置於該基座的該等區域間以提供熱隔絕。
第一與第二流體通道可被安設於揭示實施例的支撐組件內之一盤管圖案中。此外，主桿可進一步包含一加熱方式，可操作以維持該主桿的一溫度不同於該第一與第二基座區域。第一與第二流體通道可彼此流動地隔離，以提供跨越該表面的溫度差異。基板支撐表面可額外地為任何數量的幾何形狀且可以是圓形的。在該圓形的設計中，基座的第一區域可位於中心，且第二區域可為一環形區域圍繞該第一區域。隨後的區域可以附加地提供。
在揭示實施例中，基座與主桿可為二分開的元件，彼此電氣地絕緣。此外，第一流體通道的第一與第二部分可由彼此垂直地設置，且可實質地或直接垂直地對齊。支撐組件可另外包括一第一清潔通道，該第一清潔通道界定於基座內並配置以提供一第一清潔流動路線於一淨化氣體。第一清潔通道可包括一垂直隔離孔穴，界定於基座的第一區域與第二區域間，且該隔離孔穴可被配置以接收淨化氣體的一部分。組件的基座部分可由一或多個板材彼此連結而形成，且該基座可於各式的實施例中包含多重板材。一第一板材可包含該基板支撐表面，一第二板材可位於第一板材下方並具有數領域，該等領域界定至少部分第二流體通道的該第三與第四部分，以及至少一部分隔離孔穴。
基座可包括至少一額外的板材，該板材位於第一板材下方，或於第一與第二板材間，其包括數領域，該等領域界定第一流體通道的第一與第二部分。至少一額外的板材可進一步包括數領域，該等領域界定至少部分第二流體通道的該第三與第四部分、至少部分隔離孔穴以及第一清潔通道。至少一額外的板材可包含至少二板材，例如一第三與第四板材。第三板材可位於第一板材下方且包括數領域，該等領域界定至少部分第一流體通道的第一與第二部分、至少部分第二流體通道的該第三與第四部分及隔離孔穴的第一部分。第四板材可位設於第三板材下方且包括數部分，該等部分界定至少第一清潔通道的一部分，以及至少隔離孔穴的一第二部分，該隔離孔穴的第二部分與隔離孔穴的第一部分流體連通，該隔離孔穴的第一部分由第三板材所界定。隔離孔穴可被配置以產生一熱阻障層於基座的第一區域與基座的第二區域間。組件仍可進一步包括一第二清潔通道，沿主桿與基座間的一界面而界定，且該第二清潔通道被配置以提供一第二清潔流動路線，該第二清潔流動路線被配置以產生一熱阻障層於主桿與基座間。第二清潔通道可至少部分由一額外的清潔分佈板材界定。
基板支撐組件也描述包括一基座，該基座具有一基板支撐表面。組件可另外包括一主桿，該主桿連結至相對於基板支撐表面的基座，該基板支撐表面包括一對主桿內通道，配置以傳送與接收一溫度控制流體至該基座。組件可包括一流體通道，界定於基座的一中央區域內、該流體通道在一進口段連接於該對主桿內通道之一，且被配置以由主桿內通道接收該溫度控制流體。流體通道可進一步在一出口段被連接於該對主桿內通道之另一，並被配置以導向該溫度控制流體至其它主桿內通道。流體通道可包括一第一通道部分與一第二通道部分，介於進口與出口段間，且第二通道部分可由第一通道部分垂直地設置並與該第一通道部分連接於一平行反向圖案中。通道部分可被配置，使得於進口段接收的流體被導向通過第一通道部分早於流過第二通道部分並通過出口段。流體通道也可被安設於一盤管圖案中，該盤管圖案被配置以導向溫度控制流體由進口段沿徑向向外通過基座。組件主桿可進一步包括一加熱方式，該加熱方式與該等主桿內通道分離，且可操作以維持該主桿於不同於該基座的一溫度。流體通道的第一與第二部分在揭示實施例中，可由彼此垂直地被設置，且該等部份可直接垂直方向對齊。基座可進一步包括一清潔通道，具有一位於遠端向外封閉孔穴，該孔穴界定於基座內，至少部分位於流體通道下方。孔穴可位於由基座沿徑向向外的一位置，該腔室界定基座的一區域。清潔通道可被配置以由一主桿清潔通道接收一加壓流體，主桿清潔通道包含於清潔通道內，以創造一流體阻障層於基座內清潔通道各處。此外，組件的基座部分可由複數個板材彼此連結而形成，進而形成該基座。
該技術可提供優於傳統設備的諸多好處。舉例而言，跨越基座表面的溫度可維持在更均勻的溫度，其可允許改進的製程處理，跨越一基板表面而被實施。此外，提供能具有不同區域維持在不同溫度的一組件，可允許更精確的作業被執行，並可減少設置於設備表面的材料份量。此等及其它實施例，伴隨著許多自身的優勢與特徵，結合以下的描述和附圖，更詳細地描述之。
本技術包括於半導體製程處理作業中，用於加熱及冷卻分佈的改良基座設計。雖然傳統的基座可於作業中控制基板的概括溫度，本描述之技術允許跨越整體表面及基座與主桿之外表的溫度特徵之改良控制。該技術允許基座被控制於多重獨立區域中。如此作法下，因居於該基座上的一基板能跨全表面被維持於一較均勻的溫度分佈，改良的作業便可以執行。此等及其它益處將於下方詳盡地解說。
第1圖為一製程處理工具100的實施例之俯視平面圖，該製程處理工具100用於示例的半導體製造製程處理，且於其中可找到依照本技術的一基座。該圖中，一對前開口式通用容器（FOUPs）102供應各式尺寸的基板，該等基板可由機器手臂104所接收，並在放置於縱排製程處理腔室109a-c的基板製程處理段108a-f其中之一前，放置於一低壓保存區106。一第二機器手臂110可被用來由保存區106至製程處理段108a-f間，來回搬運該等基板。
縱排製程處理腔室109a-c的基板製程處理段108a-f可包括一或多個系統元件，該等元件用以於一基板上進行沉積、退火、硬化及／或蝕刻薄膜。在一配置中，製程處理腔室的2對縱排製程處理段（例如108c-d與108e-f）可被用來於基板上沉積一種可流動的介電性物質，第三對縱排製程處理段（例如108a-b）可被用來退火該沉積的介電質。在另一配置中，製程處理腔室的2對縱排製程處理段（例如108c-d與108e-f）可被配置以於基板上，以沉積及退火一可流動的介電質薄膜，而第三對縱排製程處理段（例如108a-b）可被用作沉積薄膜紫外線或電子束硬化。在又一配置中，所有3對縱排製程處理段（例如108a-f）可被配置以蝕刻沉積在基板上的介電質薄膜。
在再一配置中，2對縱排製程處理段（例如，108c-d與108e-f）可被用來沉積介電質與紫外線或電子束硬化介電質，而一第三對縱排製程處理段（例如108a-b）可被用作介電質薄膜退火。將可以理解的是用於可流動的介電質薄膜，額外的沉積、退火與硬化腔室的配置也是系統100所預期的。
此外，一或多個縱排製程處理段108a-f可配置作為一濕製程處理腔室。該等製程處理腔室包括加熱介電質薄膜於包括濕氣的大氣中。因而，系統100的實施例可包括濕製程處理縱排製程處理段108a-b與退火縱排製程處理段108c-d，以執行濕與乾燥退火於該沉積的介電質薄膜。
第2圖圖示依照本技術的實施例之一製程處理系統200的簡化剖面圖，該技術可包括於製程處理腔室內之分割的電漿產生區域。該製程處理系統可選擇性地包括位於製程處理腔室205外側之元件，如流體供應系統210。該製程處理腔室205可保存與週遭壓力不同之一內部壓力。舉例而言，在製程處理過程中，製程處理腔室內部的壓力可約10毫托耳至約20托耳間。
在作業中，一製程處理氣體通過一氣體進口組件240可流至第一電漿區域235。先於進入該第一電漿區域235，該製程處理氣體可於一遠端電漿系統（RPS）215內被激發。一蓋部220、一淋浴噴頭225及一基板支撐245（具有一基板255設置於其上）依照揭示實施例圖示。該蓋部220可為金字塔形、圓錐形或其他類似的結構，該結構具有一窄頂部分擴展至一寬底部分，或可為描繪地相對持平。蓋部220可包括一交流電壓源，淋浴噴頭225可以是接地的，和在第一電漿區域235的電漿產生一致。一絕緣環230可置於蓋部220與淋浴噴頭225間，該淋浴噴頭225促使電容耦合電漿（CCP）形成於該第一電漿區域235。
蓋部220可為一雙源蓋部，供依照揭示實施例之一製程處理腔室使用。一流體進口組件240可傳入一流體，比如說一氣體，至第一電漿區域235中。流體進口組件240可包括2個不同的流體供給通道於該組件內。一第一通道可攜運一流體，比如說一氣體，該流體通過遠端電漿系統215，而一第二通道可攜運一流體，比如說一氣體，該流體繞過遠端電漿系統215。第一通道可被用於製程處理氣體，且該第二通道可被用於揭示實施例中的一處理氣體。該等氣體可流進電漿區域235且為一障礙物（未繪示）所分散。蓋部220與淋浴噴頭225間圖示一絕緣環230。相對於淋浴噴頭225，該絕緣環230允許一交流電位施加至蓋部220。
一流體，例如一前驅物，可藉由描繪於此之淋浴噴頭225的實施例，流進第二電漿區域250。在電漿區域235裏由製程處理氣體衍生之激發的物種，可穿越淋浴噴頭225中的孔且與前驅物反應，該前驅物自淋浴噴頭流進第二電漿區域250。少數或沒有電漿可出現於第二電漿區域250中。製程處理氣體的激發衍生物與前驅物可在基板上結合於該區域裏。
在第一電漿區域235中直接激發該製程處理氣體、在遠端電漿系統215激發該製程處理氣體，或兩者皆具，可提供幾個好處。基於第一電漿區域235中的電漿，由製程處理氣體衍生之激發的物種濃度可於第二電漿區域250內增加。該增加可能由第一電漿區域235中的電漿的位置所導致。比起遠端電漿系統215，第二電漿區域250可坐落較近於第一電漿區域235，經與其它氣體分子、腔室牆面及淋浴噴頭表面碰撞，留下較少的時間讓該激發的物種離開激發態。
由製程處理氣體所衍生之激發的物種濃度的均勻性也可於第二電漿區域250內增加。此舉可能由第一電漿區域235的形狀所導致，該形狀可更近似於第二電漿區域250的形狀。相對於通過接近淋浴噴頭225中心的孔之物種，創造於遠端電漿系統215之激發的物種可運行更遠的距離，以通過接近淋浴噴頭225邊緣的孔。較遠的距離可導致該等激發的物種之減少激發程度且，舉例而言，接近一基板邊緣處可導致一較緩的成長率。於第一電漿區域235裏激發製程處理氣體可減緩此變異量。
製程處理氣體可被激發於遠端電漿系統215中，且可在激發態下通過淋浴噴頭225到第二電漿區域250。作為一種選擇，電力可被應用到第一製程處理區域，以不是激發一電漿氣體，就是增加由遠端電漿系統215而來的一已激發的製程處理氣體。雖然電漿可被產生於第二電漿區域250中，電漿可選擇性地不被產生於第二電漿區域。在一例子中，唯一製程處理氣體或前驅物的激發可來自激發遠端電漿系統215中的製程處理氣體以與第二電漿區域250中的前驅物反應。
電漿產生氣體及／或電漿激發的物種可通過蓋部220上的複數個孔（未繪示），以更均勻傳送進電漿激發區域235。示例性的配置包括具有進口240開向一氣體供應區域260，該氣體供應區域260由電漿激發區域235藉蓋部220分割出，以便該等氣體／物種流過蓋部220上的該等孔到電漿激發區域235。結構與作業的特徵可被選擇以防止電漿自電漿激發區域235顯著的回流進該供應區域260、進口240與流體供應系統210。結構的特徵可包括尺寸的選擇與去除活化回流電漿的蓋部220上的孔之剖面幾何形狀。作業的特徵可包括於氣體供應區域260與電漿激發區域235間維持一壓力差，該電漿激發區域235維持一個經淋浴噴頭225的電漿單向流。
淋浴噴頭225可包括複數個孔，該等孔抑制離子帶電物種遷移出該電漿激發區域235，但允許未帶電中性或自由基物種通過淋浴噴頭225。該等未帶電物種可包括高度反應性的物種，該等物種與較小反應性的運送氣體被運出該等孔。如上文該，經該等孔，離子物種的遷移可減少，且在某些情況下會完全地受抑制。控制離子物種通過淋浴噴頭225的量可對氣體混合物增加控制，該氣體混合物與在下方的晶圓基板接觸，而基板順次增加對氣體混合物的沉積及／或蝕刻特性的控制。
淋浴噴頭225上的複數個孔可被配置以控制活性氣體（即，離子的、自由基的及／或中性的物種）穿過淋浴噴頭225。舉例而言，孔的深寬比（即，孔直徑對其長度的比例）及／或孔的幾何形狀可被控制，以便穿過淋浴噴頭225活性氣體中的離子帶電物種流減少。在實施例裏，淋浴噴頭225包括結合於淋浴噴頭的一電耦合離子抑制器處，離子阻斷器中的孔，可設置在淋浴噴頭上方，亦可包括面對電漿激發區域235的一錐形部分，與面對淋浴噴頭的一圓柱形部分。圓柱形部分可被成形及量度以控制離子物種流穿越至淋浴噴頭。一可調電偏壓置也可被應用到該淋浴噴頭225，做為控制離子物種流的一種額外的方法。
依照一沉積或一蝕刻製程處理進行與否，氣體與電漿激發的物種可通過淋浴噴頭225並被導向至基板。淋浴噴頭能進一步導向氣體或電漿物種流。淋浴噴頭可以是一雙區淋浴噴頭，可包括多重流體通道以導向一或多個氣體流。該雙區淋浴噴頭可具有一第一組通道，以允許電漿激發的物種通過至反應區域250，及一第二組通道，傳送一第二氣體／前驅物混合物至該反應區域250。
一流體輸送源可與淋浴噴頭耦接以傳送一前驅物，該前驅物能繞過電漿激發區域235且由淋浴噴頭內經第二組通道進入反應區域250。淋浴噴頭中的第二組通道可流動地與一源氣體／前驅物混合物（未繪示）耦接，該混合物被選擇供製程處理執行。舉例而言，當製程處理系統被配置以於基板表面執行一蝕刻時，該源氣體／前驅物混合物可包括腐蝕劑，例如氧化劑、鹵素、水蒸汽及／或載氣體，該等腐蝕劑與電漿激發的物種混合於反應區域250，電漿激發的物種由淋浴噴頭中的第一組通道分佈而來。當電漿激發的物種通過淋浴噴頭225中的孔時，該等物種中過多的離子可能減少，且當該等物種通過淋浴噴頭中的通道時，會進一步減少。
基座245可操作以支撐與移動基板或晶圓255。基座245與淋浴噴頭225底部間的距離有助於界定反應區域250。基座245可以於製程處理腔室205內垂直地或軸向地調整，以增加或減少反應區域250，並由重新配置晶圓基板（針對通過淋浴噴頭225的氣體），以影響晶圓基板的沉積或蝕刻。
基座245也可配置一加熱元件，例如一電阻加熱元件，以維持基板於加熱溫度（例如，約90°C至約1100°C）。示例的加熱元件可包括嵌設於基板支撐盤的一單一迴路加熱器元件，該基板支撐盤以平行同心圓的形式製造二或多個整圈。該加熱器元件的一外部部分可鄰近於該支撐盤的周邊上而運作，而一內部部分可運作於具有一較小外徑的一同心圓的路徑上。連至加熱器元件的電線可穿過基座的主桿。
一雙區淋浴噴頭，如同該製程處理系統與腔室，更完整地描述於2011年10月3日所申請，第13/251,714號專利申請案中。該案為各種目的使用，經由引用併於此，無牴觸專利申請範圍的特徵與此處的說明。
翻到第3圖，該圖描繪依照本技術的實施例之一基板支撐組件300的剖面圖。該支撐組件300包括一基座305與主桿310。主桿310也可包括一基底312，基座305位於基底312上。基座305可包括一基板支撐表面315，於一半導體製程處理作業期間，該基板支撐表面315被配置以支撐一基板。基板支撐表面315可由一金屬，例如鋁或陶瓷或其它材料所製成，且可由其他材料處理或噴塗，該等材料提供改良的耐腐蝕性，改良的基板觸點等。
主桿310可連接至相對於基板支撐表面315的基座305。主桿310可包括一或多個內通道320，該內通道320配置以傳送與接收溫度控制流體、加壓的流體或氣體往返基座305。一示例的主桿310可包括4個內通道320，該等內通道320可被成對劃分。選擇性的安置方式可包括較多或較少的通道，且可包括1、2、3、4、5、6、7、8、10、12等，或多個通道供流體輸送。一第一對內通道320可被配置以個別地經該等通道，傳送與接收一第一溫度控制流體至基座305。一第二對內通道320可被配置以個別地經該等通道，傳送與接收一第二溫度控制流體至基座305。該主桿也可包括一或多個加熱方式，可操作以維持該主桿的溫度不同於基座所維持的溫度。舉例而言，主桿可包括一流體循環系統套於四周，或整合於其內。可做為選擇性地，主桿310也可配置一加熱元件，例如一電阻式加熱元件，以維持主桿於特定溫度（例如，約90°C至約1100°C）。連接至加熱器元件的電線可穿過該基座的主桿，要不然引導經過腔室。藉由維持主桿於一適合的溫度，可能限制或防止沉積發生於支撐組件300的主桿部分。
受第一與第二溫度控制的流體，經由位於基座305的流體通道，可被傳送到基座相同或不同的區域。舉例而言，第一溫度控制流體可被傳送到在基座305的一第一區域330內的一第一流體通道325。第二溫度控制流體可被傳送到在基座305的一第二區域340內的一第二流體通道335。二流體可以是相同的或不同的，也可被提供於相同的或不同的溫度以維持二區域330、340於類似或不同的溫度。舉例而言，第二溫度控制流體可在大於或小於第一溫度控制流體的溫度下被傳送，此舉將允許第二區域340溫度個別地高於或低於第一區域330的溫度。此舉能被用來影響蝕刻與沉積在晶圓上的剖面輪廓，也能用來影響發生於不同位置上的沉積量或蝕刻量。溫度控制流體的循環允許基板溫度維持於相對低的溫度，例如約-20°C至約150°C，也於相當高的溫度，例如約90°C至約1100°C。溫度可相對地被維持在約0°C與100°C間，少於或約為100°C等。示例性的熱交換流體括乙二醇與水，但其它流體也可被使用。在組件300的替代方案中，一電阻式加熱元件裝設於通道內以提供加熱能量以加熱一基板。在另一個替代方案中，流體通道被配置以包括一電阻式加熱元件與空間，用以循環溫度控制流體，使得溫度控制的多重選擇變為可行。
任一第一與第二流體通道可連接主桿內通道320於一進口及一出口，用來接收與傳送溫度控制流體。溫度控制流體可接著循環經過流體通道，以於基座區域提供實質均勻的溫度控制。在某些實施例中，第一與第二流體通道彼此流動地隔離。流體通道可安設為各式的圖案，包括螺旋、盤管或其它的幾何圖案，將循環溫度控制流體流經基座區域。
流體通道循環於第一與第二區域間可以是類似的，並將於此針對第一區域330解說之。第一流體通道325可與一第一對主桿內通道320之一連接於一第一進口327，以接收第一溫度控制流體。第一流體通道325可與該第一對主桿內通道的320另一連接於一第一出口329，以在第一溫度控制流體已循環流經基座305的第一區域330後，傳送該第一溫度控制流體。第一流體通道325可包括一第一部分331與一第二部分333於進口327與出口329間。第二部分333可自第一部分331垂直地設置，在替代實施例中可位於第一部分331之上或其下。在替代的安設方式中，第二部分333可自第一部分331水平地設置。舉例而言，第一與第二部分也可彼此被設置於精確垂直的安設中，而第一部分331直接設置於第二部分333之上。作為一種選擇，第二部分333可由一直接垂直的關係被替換另一側。
第一流體通道的第一與第二部分之安設方式可以是如此，以創造各式的流動圖案之用於第一溫度控制流體。在一實施例中，第一與第二部分被安設以產生一平行反向流動圖案給該第一溫度控制流體。特別是，溫度控制流體在第一進口327被接收後，可由靠近主桿內通道位置，向外至第一區域330的較遠部分，流經第一流體通道的第一部分。溫度控制流體可接著被傳送於第一流體通道的第一與第二部分間，並由第一區域330的較遠部分向內流動至靠近主桿內通道的位置。溫度控制流體可接著在第一出口329被傳送至主桿內通道320。
提供一平行反向圖案流動安設方式，某處二通道緊鄰，藉由產生跨越基板支撐表面更均勻的溫度分佈，可提供改進的溫度控制。舉例而言，當該等通道如圖般直接垂直方向對齊，一般流體流動的區域可平均在一均勻的溫度。當流體流經該等通道時，取決於流體的溫度，熱量可能消散或被吸收。當流體的溫度改變時，基座的溫度可不在所有位置仍維持均勻。然而，當垂直地對齊通道的平行反向圖案流動安設方式提供時，流體溫度平均化就可能發生。舉例而言，當該流體被用來冷卻，進口點可具有最低的流體溫度，而出口點可具有最高的流體溫度。從而，因為通道的該等部分可以是緊鄰的，該流體可於該區域內提供一特定的溫度。在該區域的較遠部分，流體的溫度介於進口流體溫度與出口的流體溫度間，及當流體反向流動於該較遠區域時，於該區域內的特定溫度可類似於近主桿的平均溫度。從而，跨越基座的較均勻之溫度分佈可基於流動流體的速度與通道方向被提供，前述者可能不見於傳統設計中。
雖然數個第二流體通道335元件，包括進口與出口，為了明晰起見未繪示第3圖中，第二流體通道335可以一類似方式，安設於第二區域340中。舉例而言，第二流體通道335可被配置以於基座305的第二區域340內，提供實質均勻溫度控制。第二流體通道335可與一第二進口連接以由一第二對主桿內通道320之一接收第二溫度控制流體，並與一第二出口連接以傳送第二溫度控制流體至第二對主桿內通道320之另一。第二流體通道可包括一第三部分337及一第四部分339，在該處，第三部分337由第四位置339垂直地設置並與第四位置339安設於一平行反向圖案中。如此，於第二進口接收的流體可循環經第三部分337，先於流經第四部分339，並接著通過第二出口。流體的循環，及通道的安設方式，可類似第一流體通道，或可以是以上討論的替代安設方式之一。正如第一流體通道，第二流體通道的第三與第四部分可由彼此垂直地設置，或以替代的配置方案設置。舉例而言，第三與第四部分也可彼此設置於精確的垂直安設方式中，第三部分337直接設置於第四部分339上。作為一種選擇，第四部分339可由一直接垂直的關係被取代至另一側。在再一替代方案中，第四部分339可設置於第二流體通道335的第三部分337上，或流動方向可逆轉。雖然第3圖顯示用於第二流體通道的單一迴路，基於通道方向與尺寸以及基座尺寸，任何數目的迴路都可被提供。正如第一流體通道，第二流體通道可包括任何數量之連接或螺旋環圍繞該區域，且可在不同實施例中包括一或多個環，多達或高於3、4、5、6、7、8、9、10等，或多個通道迴路。
基板支撐表面315可以是各式的形狀，包括圓形的、橢圓的或其它幾何形狀。該技術的一示例性基座是實質圓形的，第一區域330居於基座的中央，第二區域340為圓形的且圍繞該第一區域。每一區域也可彼此為類似或不同外型。額外的區域可類似地被開發成具有分開的流體通道區域部分，或額外的圓形段由彼此沿徑向向外設置。
基座305與主桿310可於組件300上彼此隔離。舉例而言，於接觸點345與350，額外的材料可設置，允許基座305與主桿310彼此電及／或熱絕緣。於一第一接觸位置345，O型環、陶瓷環，或其它絕緣材料可位設於基座305與主桿310間，以便組件300的二部分不直接或被限制實質性地接觸。類似地，於接觸位置350，一O型環、陶瓷環或其它絕緣材料可位設於基座305與主桿310間。此種安設方式的一個好處是該主桿可維持於顯著較高的溫度，舉例而言，該溫度高於基座，使得基板可以於沉積作業期間被保持在相對較低的溫度，但主桿可被保持在較高的溫度而限制組件300表面的沉積。由在段與段間提供熱絕緣，主桿的溫度可於任何位置不影響或最小地影響基板的溫度。此外，使用於接觸位置350的材料可以是電絕緣材料，但可提供傳導熱量傳輸，使得基座305邊緣可被加熱至類似主桿310，但與主桿電絕緣。
基板支撐表面315可為基座組件320的元件板材，其可包括複數個板材，以邦定、焊接、熱熔或其它方式彼此連接。在一示例性的實施例中，基座組件320包括5個板材；在替代的實施例中，基座組件包括少於5個板材、多於5個板材、至少3個板材等。基板支撐表面315可為組件的第一板材。基座組件320可包括一第二板材，其至少部分地界定流體通道。板材安設方式與配置進一步於下描述。
第4圖圖示依照本技術的實施例之一基板支撐組件400的局部剖面圖。組件400可包括如上該關於第3圖的類似元件。如圖所示，組件400包括基座405與主桿410。基座可包括如前面所討論的一基板支撐表面415。基座405可包括多重區域，舉例而言，一第一區域430與一第二區域440。每一區域可包括流體通道，該等流體通道循環一溫度控制流體，該溫度控制流體配置以加熱或冷卻基座405至一預定的溫度。通道可選擇地或額外地包括加熱元件，該等元件可允許電阻式加熱，經過通道，用於基座405溫度的進一步調整。第一區域430可包括一第一通道425，第二區域440可包括一第二通道435。如前面所討論的，第一與第二通道可流體地隔離，使得一不同溫度控制流體可循環通過每一第一與第二區域。在一例子中，第二區域可維持於約100°C，而第一區域可維持於約50°C，或反之亦然。任何於前述範圍的特定溫度能分別地維持於任一第一或第二區域。如此，多重溫度安置方式可被採用以維持每一區域，相同或不同於其它區域的溫度。
基座405也可包括界定於基座內，並配置以提供清潔流動路線的一或多個清潔通道。舉例而言，一第一清潔流動路線450可由基座405的一部分而界定。一示例性的基座405可包括複數個邦定的板材，其可包括界定第一清潔流動路線450的板材。第一清潔流動路線450可循環一清潔流體至基座各處，並通過複數個界定於基座405的清潔出口455疏散。雖然第4圖說明一清潔出口455，任何數量的清潔出口可包括於不同的配置中，且可包括於基座內的出口的一或多個環。此特徵將參照以下的第5圖，更詳細地討論。
第一清潔路線450可於基座405內被配置為任何數量的圖案。舉例而言，第一清潔路線450可被配置為一盤管圖案於基座405各處，以提供熱絕緣於基板支撐表面415與主桿410間，而該主桿可如上該地被加熱。作為一種選擇，複數個直行的通道可形成於基座中，導向一清潔流體直接到清潔出口455。第一清潔通道450可具備許多不同的變化形式，並可安設以提供一均勻清潔流動跨越基座。一清潔流體可由內通道420被傳送至主桿410，通過第一清潔通道450，並通過清潔出口455流出。該清潔流體可為一氣體，包括一惰性氣體，其被採用以限制或防止製程處理副產品形成於基板支撐表面405的孔或通道。當沉積及／或蝕刻製程處理執行時，製程處理的副產品將照例地凝結於基板製程處理室內的區域上，包括基板支撐組件上。當該等副產品累積於基板支撐表面415上及其內時，位於表面上的附隨基板可能會傾斜，其能導致不均勻沉積或蝕刻。通過該基座傳送的一淨化氣體可自基板支撐表面移動及移除反應物。
第一清潔通道450可額外包括一垂直隔離孔穴460於第一清潔通道450的遠端部分。垂直隔離孔穴可位於第一區域430的周邊，並可被配置以接收流動通過第一清潔通道450淨化氣體的一部分，該第一清潔通道450處淨化氣體的該部分維持在隔離孔穴460中，以提供熱絕緣於第一區域430與第二區域440間。在某些安設方式中，多重清潔通道被包括以分開地傳送氣體至隔離孔穴460及清潔出口455。通道或與隔離孔穴460連結的通道可向外封閉，使得通道可以流體而被加壓。一加壓氣體或加壓流體可被傳送至隔離孔穴，或被加壓於孔穴內以提供一阻障層或溫度帷幕於隔離孔穴的位置。隔離孔穴460可被安設為一通道，其可分開圍繞整個基座的第一與第二區域430、440。淨化氣體或流體可被加熱或冷卻，以被傳送至隔離孔穴460，使得其不會影響溫度控制流體的溫度控制，而等該溫度控制流體循環於基座區域。作為一種選擇，淨化氣體可於一選擇的溫度下被傳送，以調整跨越基座的溫度分佈。在一示例性的基座中，隔離孔穴460可以跨越基座的多重板材而分佈。舉例而言，基板支撐表面可以是於基座內的一第一板材，第一與第二流體通道425、435可至少部分界定於基座的第二板材。第二板材也可至少部分界定隔離孔穴460的一第一部分。第三板材可至少部分界定第一清潔通道450以及隔離孔穴460的一第二部分，該隔離孔穴460的一第二部分流體連通於由第二板材界定的隔離孔穴的第一部分。如此，隔離孔穴460可由傳送淨化氣體的一部分至孔穴而被採用，孔穴可創造一熱阻障層於第一與第二流體通道425、435間，及在基座405的第一區域430與第二區域440間。
基座405也可包括一第二清潔通道465，該第二清潔通道465可沿介於主桿410與基座405間的界面被界定。第二清潔通道465可被配置以提供一第二清潔流動路線於一淨化氣體，而該淨化氣體可產生一額外的熱阻障層於主桿410與基座405間。從而，在一實施例中，加到主桿410的熱量藉以限制製程處理副產品的沉積量，可不會影響到通過基座405應用的溫度控制方案。第二清潔通道465可另外包括一第二隔離孔穴與清潔出口470。第二隔離孔穴與清潔出口470可被配置以接收通過第二清潔通道465傳送之淨化氣體的一部分，並可提供額外的熱絕緣於基座邊緣475與基座405的第二區域440間。從而，基座邊緣475可以類似於主桿410的方式被加熱，以於設備上減少副產品沉積的量，而提供一阻障層於基座405，使得均勻溫度分佈可更容易提供於第二區域440的基板支撐表面415上。
第二隔離孔穴470可作用及以同第一隔離孔穴460的類似方式被安設。淨化氣體或流體可由主桿410的內通道420被傳送，並如同傳送淨化氣體至第一清潔通道450，可以是相同的或不同內通道420。於替代的實施例中，傳送到第一與第二清潔通道450、465的淨化氣體可以是相同的或不同。淨化氣體可被傳送通過第二清潔通道465並進入第二隔離孔穴470，早於通過隔離孔穴470頂部的清潔出口而被排除。隔離孔穴470頂部的清潔出口可類似出口455，第一淨化氣體通過出口455被傳送。作為一種選擇，一空間可被創造於第二隔離孔穴470的頂部整體四周，供淨化氣體流動。作為一種選擇，第二隔離孔穴470可向外封閉，使得流體積聚或增壓可執行於第二隔離孔穴中，第二隔離孔穴提供一增強的熱阻障層於基座的外部邊緣。
第5圖說明依照本技術的實施例之一基座元件板材500的俯視平面圖。板材500可以是形成基座的數個元件板材其中之一。板材500包括一第一流體通道525，設置於一第一區域530內，以及一第二流體通道535，設置於一第二區域540內。第一流體通道安設為一盤管圖案，但能作為一種選擇地安設為一螺旋形，或其它幾何圖案以供溫度控制流體循環。第5圖說明通道的一第一部分，即，頂部部分，但板材可在下方另外界定通道的一第二部分。頂部與底部部分可彼此為鏡像，或可以是反向圖案。在一示例性的板材500中，一溫度控制流體通過板材中心被傳送至第一流體通道525並向外朝向第一流體通道525的一遠端位置傳送。溫度控制流體可接著被傳輸至流體通道（未繪示）的底部部分，在該處，相較於流體通道525的頂部部分，溫度控制流體於一平行反向圖案中循環，朝向板材中心回流。溫度控制流體接收與傳送至第一流體通道可通過與支撐組件主桿的內通道連接而發生。
板材500也包括第二流體通道535，其安設為一盤管環繞板材500的第二區域540，以供一溫度控制流體之循環，該溫度控制流體可以是相同或不同於傳送通過第一流體通道525的溫度控制流體。雖然顯示為單一流通安設方式，取決於板材500尺寸，多重流通或盤管配置可以被採用。第二流體通道535也可包括一第二部分於板材（未繪示）之下側，以提供一第二溫度控制流體的平行反向圖案循環安設方式。
板材500也可包括一隔離孔穴560，該隔離孔穴560能被採用以產生一熱阻障層於板材500的第一區域530與第二區域540間。隔離孔穴可被配置以接收一清潔流體，該清潔流體可填充隔離孔穴560。孔穴560可被安設於一單一通道，或如第5圖所示之多重通道。當包括多重區域的組件採用時，流體通道的圖案可能影響包括多重區域的能力。舉例而言，藉由提供盤管狀圖案，例如第5圖所圖示，於第一流體通道525，盤管間的區域允許提供給第二流體通道535進入使用。舉例而言，第一流體通道525也可採用一螺旋通道，但此配置可能阻斷進入使用第二流體通道，否則某處二通道可能相交。如果提供相同的流體，此相交可提供於通道方案中；但如果採用不同流體或不同溫度的流體，如此的相交安設方式可就不實用。
板材500仍可進一步包括清潔出口555，該清潔出口555可被採用以由沉積於基座基板支撐表面，移除、限制或防止製程處理副產品。清潔出口555可配置為一或多個環，或作為一種選擇地設置於跨越板材500的各個位置。如第5圖所示，作為一個例子，出口位於2個環上，但可以使用任何數量的環，包括0、1、2、3、4、5、6、7、8等，或更多的環。如第5圖所圖示的實施例之描述，一內環包括清潔出口555a及一外環包括清潔出口555b。任何數量的出口可被安設於板材500上。如其所示，內環可包括約12個或更少的清潔出口555a。作為一種選擇，內環可包括少於或約為10、8、6、4或2個出口555a；在某些實施例中，清潔出口555a的一內環可不被包括。此外，外環可包括多於，約48個，或較少的清潔出口555b。作為一種選擇，外環可包括少於或約40、32、24、20、16、12、8、4或2個清潔出口555b。再次強調，於某些板材配置中，清潔出口555b的一外環可能不被包括。如描述的內環與外環，額外的環也可被採用於包括相同或不同數量的清潔出口555。
第6圖圖示依照本技術的實施例之一基座元件板材的立體分解圖。如圖所描繪，使用了5個元件板材，但更多或更少的板材可被採用於本技術的不同實施例中。第一板材610可包含基板支撐表面，基板可位設於該表面上而供製程處理使用。該板材可包括至少淨化氣體出口618的一部分。在第一板材610下方可為一第二板材620。第二板材620可包括某些領域，該等領域界定至少部份第一流體通道622的第一與第二部分、至少部分第二流體通道624的該第三與第四部分與至少第一清潔通道626的一第一部分。第二板材620可額外地包括部分的清潔出口628，該等清潔出口628跨越板材分佈。
在第二板材620下方可為一第三板材630。第三板材630可包括某些領域，該等領域界定至少第一清潔通道636的一第二部分。部分第一清潔通道636可被配置以與第一清潔通道626的第一部分流體連通，而第一清潔通道626由第二板材620所界定。第三板材也可包括部分的清潔出口638，該等清潔出口638跨越板材分佈。在第三板材630下可為一第四板材640。第四板材可提供額外的絕緣於基板支撐表面與主桿間，並可額外至少部分地界定第一清潔通道，該第一清潔通道可至少部分地設置於第三板材630的背側。最後，一第五板材650可位於第四板材下方。第五板材仍可提供額外的熱絕緣於基板支撐表面與主桿間，並在某些實施例中，第五板材可包括某些領域，該等領域界定至少部分第二流體通道655的第三與第四部分。第二溫度控制流體可由主桿內通道被傳送，如前該，並可跨越第五板材循環至連接處（未繪示），該等連接處傳送溫度控制流體上至第二板材620，用來循環通過基座的第二區域。每一板材620、630、640及650可包括額外的連接處，通過該等連接處，第一溫度控制流體可被傳送至第二板材620的第一流體通道622。
第7圖說明依照本技術的實施例之一基座700元件板材的俯視平面圖。如其所示，基座700可進一步包括一清潔分佈板材710，該清潔分佈板材710至少部分界定前述的第二清潔通道。分佈板材710可由陶瓷，或可具有低熱導的其它材料所製成。第二清潔通道可提供熱絕緣於基座與主桿間，以改善跨越基板溫度分佈的均勻性。當包括以下的基座元件板材，如在第6圖的一實施例中該，第二清潔通道可完全被界定。複數個孔可被採用來進一步界定一淨化氣體的流動路線於第二清潔通道內。
舉例而言，淨化氣體可通過主桿及內通道705被向上傳送。淨化氣體可接著在第6圖示例性設計之第五板材或一底部板材下，繼續前進至清潔分佈板材710的初始孔712。淨化氣體可流動通過孔712並在清潔分佈板材710下，到可由主桿基底708至少部分被界定的領域。淨化氣體可回流向上通過孔714、向下通過孔716、向上通過孔718、向下通過孔720並接著淨化氣體可被傳送至第二隔離孔穴725。取決於應用方式，清潔分佈板材可包括較多或較少的孔路徑。清潔分佈板材可由金屬、陶瓷、塑膠或其它材料所製成，前述其他材料利於淨化氣體流動及／或最小化主桿與基座間的熱量傳輸。
在前面的描述中，為了解釋的目的，眾多細節已經闡述，以提供本技術的各種實施例之理解。然而，某些實施例在沒有該等細節部分，或具有其他細節資訊的情況下也可以實施，此舉將是本領域技術人員顯而易見的。
在已經揭示的一些實施例中，本技術領域的技術人員確認在不脫離所揭示的實施例之精神情況下，各種修改，替換的結構和均等物也可以被使用。此外，一些眾所周知的製程處理和元素都沒有被描述，以避免不必要地模糊本技術。從而，上述的描述不應被視為對該技術範圍的限制。
應當理解的是，於某處提供的值的範圍，至下限單元的最小分數，除非上下文清楚地指出，否則，介於該範圍上限和下限之間的每個居間值也具體地被揭示。包含介於任何陳述值或在一陳述範圍的居間值，及在該範圍內任何其它陳述值或居間值間的每一較小的範圍。該等更小的範圍的上限和下限可以獨立地被包括或排除於該範圍內，且受制於該陳述範圍中任何特定地排除的界線，每一範圍內，在上下限兩者之一、兩者皆無或兩者皆有被包括於該更小的範圍處，也包含於本發明內。在該陳述範圍包括上下限之一或兩者處，該等被包括的界線之排除兩者之一或兩者皆有的範圍也被包括。
如本文所用，在所附的申請專利範圍中，除非上下文清楚地指出，否則單數形式「一」、「一」與「該」包括複數的參照。因此，例如，參照「一介電材料」包括複數個該等材料，及參照「該應用」包括參照一個或多個應用和其在本技術領域之技術人員已知的均等物，等等。
同樣的，字詞「包含」、「包含」、「含有」、「含有」、「包括」、「包括」與「包括」，當被使用於說明書及下方的申請專利範圍內時，意味特定化該陳述特徵、整數、元件或步驟的存在，但其不排除該一或多個其它特徵、整數、元件、步驟、行為或群體的存在或附加。
100‧‧‧製程處理工具、系統
102‧‧‧前開口式通用容器
104‧‧‧機器手臂
106‧‧‧低壓保存區、保存區
108a‧‧‧基板製程處理段、製程處理段
108b‧‧‧基板製程處理段、製程處理段
108c‧‧‧基板製程處理段、製程處理段
108d‧‧‧基板製程處理段、製程處理段
108e‧‧‧基板製程處理段、製程處理段
108f‧‧‧基板製程處理段、製程處理段
109a‧‧‧縱排製程處理腔室
109b‧‧‧縱排製程處理腔室
109c‧‧‧縱排製程處理腔室
110‧‧‧第二機器手臂
200‧‧‧製程處理系統
205‧‧‧製程處理腔室
210‧‧‧流體供應系統
215‧‧‧遠端電漿系統
220‧‧‧蓋部
225‧‧‧淋浴噴頭
230‧‧‧絕緣環
235‧‧‧第一電漿區域、電漿區域、電漿激發區域
240‧‧‧氣體進口組件、流體進口組件、進口
245‧‧‧基板支撐、基座
250‧‧‧第二電漿區域、反應區域
255‧‧‧基板、晶圓
260‧‧‧氣體供應區域、供應區域
300‧‧‧組件、支撐組件、基板支撐組件
305‧‧‧基座
310‧‧‧主桿
312‧‧‧基底
315‧‧‧基板支撐表面
320‧‧‧內通道、主桿內通道、基座組件
325‧‧‧第一流體通道
327‧‧‧第一進口
329‧‧‧第一出口
330‧‧‧第一區域
331‧‧‧第一部分
333‧‧‧第二部分
335‧‧‧第二流體通道
337‧‧‧第三部分
339‧‧‧第四部分、第四位置
340‧‧‧第二區域
345‧‧‧接觸點、第一接觸位置
350‧‧‧接觸點、接觸位置
400‧‧‧基板支撐組件、組件
405‧‧‧基座
410‧‧‧主桿
415‧‧‧基板支撐表面
420‧‧‧內通道
425‧‧‧第一通道、第一流體通道
430‧‧‧第一區域
435‧‧‧第二通道、第二流體通道
440‧‧‧第二區域
450‧‧‧第一清潔流動路線、第一清潔路線、第一清潔通道
455‧‧‧清潔出口
460‧‧‧垂直隔離孔穴、隔離孔穴
465‧‧‧第二清潔通道
470‧‧‧第二隔離孔穴與清潔出口、第二隔離孔穴
475‧‧‧基座邊緣
500‧‧‧元件板材、板材
525‧‧‧第一流體通道
530‧‧‧第一區域
535‧‧‧第二流體通道
540‧‧‧第二區域
555‧‧‧清潔出口
555a‧‧‧清潔出口
555b‧‧‧清潔出口
560‧‧‧隔離孔穴
610‧‧‧第一板材
618‧‧‧淨化氣體出口
620‧‧‧第二板材
622‧‧‧第一流體通道
624‧‧‧第二流體通道
626‧‧‧第一清潔通道
628‧‧‧清潔出口
630‧‧‧第三板材
636‧‧‧第一清潔通道
638‧‧‧清潔出口
640‧‧‧第四板材
650‧‧‧第五板材
655‧‧‧第二流體通道
700‧‧‧基座
705‧‧‧內通道
708‧‧‧主桿基底
710‧‧‧清潔分佈板材、分佈板材
712‧‧‧初始孔
714‧‧‧孔
716‧‧‧孔
718‧‧‧孔
720‧‧‧孔
725‧‧‧第二隔離孔穴
揭示實施例之本質與優點的進一步理解，可由參照說明書之剩餘部分與圖式而實現。
第1圖為一製程處理工具實施例之俯視平面 圖。
第2圖為一製程處理腔室實施例之示意剖面圖，依照本揭示技術的一基座可在該製程處理腔室中找到。
第3圖說明依照本技術的實施例之一基板支撐組件的剖面圖。
第4圖圖示依照本技術的實施例之一基板支撐組件的局部剖面圖。
第5圖說明依照本技術的實施例之一基座元件板材的俯視平面圖。
第6圖圖示依照本技術的實施例之一基座元件板材的立體分解圖。
第7圖說明依照本技術的實施例之一基座元件板材的俯視平面圖。
於附圖中，類似元件及／或特徵可具有相同的數字參考符號。此外，相同類型的各元件可由遵循藉一字母輔佐之參考符號而被區別，該字母區分該等類似元件及／或特徵。若僅第一數字參考符號用於說明書中，該描述適用於任一之類似元件及／或特徵，該等類似元件及／或特徵具有相同的第一數字參考符號而不論後綴字母。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無

Claims (18)

  1. 一種基板支撐組件，包含： 一基座，該基座具有一基板支撐表面； 一主桿，該主桿在該基板支撐表面的相對面與該基座耦合，該主桿包括一對主桿內通道，該一對主桿內通道被配置以將一溫度控制流體傳送和接收到該基座； 一流體通道，該流體通道界定在該基座的一中央區域內，該流體通道在一進口段與該一對主桿內通道中的一個主桿內通道耦合並被配置以從該一對主桿內通道中的該一個主桿內通道接收該溫度控制流體，並且該流體通道在一出口段與該一對主桿內通道中的另一個主桿內通道耦合並被配置以將該溫度控制流體導向至該一對主桿內通道中的該另一個主桿內通道，並且該流體通道包括在該進口段與該出口段之間的一第一通道部分和一第二通道部分，其中該第二通道部分由該第一通道部分垂直地設置並與該第一通道部分耦合於一平行反向圖案中，並且其中該第一通道部分和該第二通道部分被配置，使得在該進口段被接收的流體在流過該第二通道部分並流過該出口段之前被導向通過該第一通道部分。
  2. 如請求項1所述之基板支撐組件，其中該流體通道被安設於一盤管圖案中，該盤管圖案被配置以將該溫度控制流體從該進口段徑向向外導向通過該基座。
  3. 如請求項1所述之基板支撐組件，其中該主桿包含一加熱構件，該加熱構件與該等主桿內通道分離，且可操作以將該主桿維持在不同於該基座的一溫度。
  4. 如請求項1所述之基板支撐組件，其中該流體通道的該第一部分和該第二部分以直接垂直方向對齊方式彼此垂直地被設置。
  5. 如請求項1所述之基板支撐組件，進一步包括一淨化通道，該淨化通道具有位於遠端向外封閉的一孔穴，其中該淨化通道界定在該基座內且至少部分地位於該流體通道下方，並且該淨化通道被配置以從一主桿淨化通道接收一加壓流體，該主桿淨化通道被包含在該淨化通道內以在該基座內創造遍佈該淨化通道各處的一流體阻障層。
  6. 如請求項1所述之基板支撐組件，其中該基座包含複數個板材，該複數個板材彼此耦合以形成該基座。
  7. 一種基板支撐組件，包含： 一基座，該基座具有一基板支撐表面； 一主桿，該主桿在該基板支撐表面的相對面與該基座耦合，該主桿包括一對主桿內通道，該一對主桿內通道被配置以將一溫度控制流體傳送和接收到該基座； 一流體通道，該流體通道界定在該基座的中央區域內，該流體通道包括一第一通道部分和一第二通道部分，其中該第二通道部分由該第一通道部分垂直地設置，並且其中該第一通道部分和該第二通道部分被配置，使得流體在流過該第二通道部分之前被導向通過該第一通道部分。
  8. 如請求項7所述之基板支撐組件，其中該流體通道被安設於一盤管圖案中，該盤管圖案被配置以經由該第一通道部分將該溫度控制流體徑向向外導向通過該基座。
  9. 如請求項7所述之基板支撐組件，其中該主桿包含一加熱器，該加熱器與該等主桿內通道分離，其中該加熱器可操作以將該主桿維持在不同於該基座的溫度。
  10. 如請求項7所述之基板支撐組件，其中該流體通道的該第一通道部分和該第二通道部分以直接垂直方向對齊方式彼此垂直地被設置。
  11. 如請求項7所述之基板支撐組件，進一步包括一淨化通道，該淨化通道具有位於遠端向外封閉的一孔穴，其中該淨化通道界定在該基座內且至少部分地位於該流體通道下方，並且該淨化通道被配置以從一主桿淨化通道接收一加壓流體，該主桿淨化通道被包含在該淨化通道內以在該基座內創造遍佈該淨化通道各處的一流體阻障層。
  12. 如請求項7所述之基板支撐組件，其中該基座包含複數個板材，該複數個板材彼此耦合以形成該基座。
  13. 一種基板支撐組件，包含： 一基座，該基座具有一基板支撐表面； 一主桿，該主桿在該基板支撐表面的相對面與該基座耦合，該主桿包括一對主桿內通道，該一對主桿內通道被配置以將一溫度控制流體傳送和接收到該基座； 一流體通道，該流體通道界定在該基座的一中央區域內，該流體通道包括一第一通道部分和一第二通道部分，其中該第二通道部分由該第一通道部分垂直地設置；以及 淨化通道，該淨化通道具有界定在該基座內的、位於遠端向外封閉的一孔穴，其中該淨化通道界定在該基座內且至少部分地位於該流體通道下方，並且該淨化通道被配置以從一主桿淨化通道接收流體。
  14. 如請求項13所述之基板支撐組件，其中該淨化通道被配置以包含該流體以在該基座內創造遍佈該淨化通道各處的一阻障層。
  15. 如請求項13所述之基板支撐組件，其中該流體通道被安設於一盤管圖案中，該盤管圖案被配置以經由該第一通道部分將該溫度控制流體徑向向外導向通過該基座。
  16. 如請求項13所述之基板支撐組件，其中該主桿包含一加熱器，該加熱器與該等主桿內通道分離，其中該加熱器可操作以將該主桿維持在不同於該基座的一溫度。
  17. 如請求項13所述之基板支撐組件，其中該流體通道的該第一通道部分和該第二通道部分以直接垂直方向對齊方式彼此垂直地被設置。
  18. 如請求項13所述之基板支撐組件，其中該基座包含複數個板材，該複數個板材彼此耦合以形成該基座。
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TWI831669B (zh) * 2021-08-31 2024-02-01 美商易爾德工程系統股份有限公司 使用處理爐的方法

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