JP6743149B2 - 導電性バリアのダイレクトハイブリッドボンディング - Google Patents
導電性バリアのダイレクトハイブリッドボンディング Download PDFInfo
- Publication number
- JP6743149B2 JP6743149B2 JP2018529502A JP2018529502A JP6743149B2 JP 6743149 B2 JP6743149 B2 JP 6743149B2 JP 2018529502 A JP2018529502 A JP 2018529502A JP 2018529502 A JP2018529502 A JP 2018529502A JP 6743149 B2 JP6743149 B2 JP 6743149B2
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- Prior art keywords
- conductive barrier
- barrier material
- layer
- conductive
- metal contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VMSRVIHUFHQIAL-UHFFFAOYSA-M sodium;n,n-dimethylcarbamodithioate Chemical compound [Na+].CN(C)C([S-])=S VMSRVIHUFHQIAL-UHFFFAOYSA-M 0.000 description 1
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- Condensed Matter Physics & Semiconductors (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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- Wire Bonding (AREA)
Description
本出願は、特許出願番号第09/505,283号、同10/359,608号、及び同11/201,321号に関連し、これらの出願全体が本明細書に、参照により組み込まれる。
Claims (25)
- ダイレクトハイブリッドボンド表面の形成方法であって、
第1の基板の上側表面に、第1の複数の金属接触構造体を形成することであって、前記第1の複数の金属接触構造体の上面は、前記上側表面の下方にある、ことと、
前記上側表面と前記第1の複数の金属接触構造体を覆う、導電性バリア材料の第1の層を形成することであって、前記導電性バリア材料の第1の層は、前記上側表面を覆う第1の露出部分を含む、ことと、
前記導電性バリア材料の第1の層の前記第1の露出部分を前記上側表面から除去して、前記第1の複数の金属接触構造体上に前記導電性バリア材料の第1の層の第2の露出部分を残し、前記ダイレクトハイブリッドボンド表面を形成するように構成することであって、前記導電性バリア材料の第1の層の前記第2の露出部分は、前記上側表面の下方に配置された露出上面を含む、ことと、
前記上側表面と前記第1の複数の金属接触構造体を覆う、導電性バリア材料の前記第1の層を形成する前に、導電性バリア材料の第2の層を、前記金属接触構造体の底部及び側面に形成することを含む、方法。 - 前記複数の金属接触構造体上の前記導電性バリア材料の前記露出上面は、前記除去後に前記基板の前記上側表面より20nm未満下方にある、請求項1に記載の方法。
- 前記複数の金属接触構造体上の前記導電性バリア材料の前記露出上面は、前記除去後に前記基板の前記上側表面より約1〜10nm下方にある、請求項1に記載の方法。
- 前記金属接触構造体の前記上面を、前記上側表面より約5〜40nm下方に形成することを含み、前記複数の金属接触構造体上の前記導電性バリア材料の前記露出上面は、前記除去後に前記上側表面より1〜10nm下方にある、請求項1に記載の方法。
- 前記導電性バリア材料の第1の層及び第2の層を形成して、前記金属接触構造体の全体を取り囲むことを含む、請求項1に記載の方法。
- 前記基板上の誘電体層に前記金属接触構造体を形成することを含む、請求項1に記載の方法。
- 基板のボンディング方法であって、
第1及び第2の基板のそれぞれの上側表面に、第1及び第2の複数の金属接触構造体を形成することであって、前記第1の複数の金属接触構造体の第1の上面は、前記第1の基板の前記上側表面の下方にあり、前記第2の複数の金属接触構造体の第2の上面は、前記第2の基板の前記上側表面の下方にある、ことと、
前記それぞれの上側表面と前記第1及び第2の複数の金属接触構造体を覆う、導電性バリア材料のそれぞれの第1の層を形成することであって、前記導電性バリア材料のそれぞれの第1の層は、前記第1及び第2の基板の前記それぞれの上側表面を覆うそれぞれの第1の露出部分を含む、ことと、
前記導電性バリア材料の第1の層の前記第1の露出部分を、前記第1及び第2の基板の前記上側表面から除去して、前記第1及び第2の複数の金属接触構造体上に、前記導電性バリア材料のぞれぞれの第2の露出部分を残すことであって、前記導電性バリア材料の前記第1の層の前記第2の露出部分は、前記それぞれの上側表面の下方に配置された露出上面を含む、ことと、
前記それぞれの上側表面と前記第1及び第2の複数の金属接触構造体を覆う、導電性バリア材料のそれぞれの第1の層を形成する前に、導電性バリア材料のそれぞれの第2の層を、前記第1及び第2の複数の金属接触構造体の底部及び側面に形成することと、
前記第1の基板の前記上側表面を、前記第2の基板の前記上側表面に直接ボンディングすることと、
前記第1の複数の金属接触構造体上の前記導電性バリア材料の残り部分を、前記第2の複数の金属接触構造体上の前記導電性材料のそれぞれの残り部分に直接ボンディングすることと、を含む、方法。 - 前記第1及び第2の上面を、それぞれ前記第1及び第2の基板の前記上側表面より約5〜40nm下方に形成することを含み、前記第1及び第2の複数の金属接触構造体上の前記導電性バリア材料の上面は、前記除去後に前記第1及び第2の上面よりそれぞれ1〜10nm下方にある、請求項7に記載の方法。
- 前記導電性バリア材料の第1の層及び第2の層を形成して、前記金属接触構造体の全体を取り囲むことを含む、請求項7に記載の方法。
- 前記第1及び第2の基板上のそれぞれの誘電体層に、前記第1及び第2の複数の金属接触構造体を形成することを含む、請求項7に記載の方法。
- 前記複数の金属接触構造体上の前記導電性バリア材料の上面が、それぞれ前記第1及び第2の基板の前記上側表面より20nm未満下方にあるように、前記導電性バリア材料の第1の層を除去することを含む、請求項7に記載の方法。
- 前記第1及び第2の複数の金属接触構造体上の前記導電性バリア材料の上面が、それぞれ前記第1及び第2の基板の前記上側表面より約1〜10nm下方にあるように、前記導電性バリア材料のそれぞれの第1の層を除去することを含む、請求項7に記載の方法。
- 前記上側表面を覆う前記導電性バリア材料の第1の層を形成することは、前記上側表面の全体を覆うことを含む、請求項1に記載の方法。
- 素子のダイレクトハイブリッドボンド表面を含む構造体であって、前記ダイレクトハイブリッドボンド表面は、
誘電体層と、
導電性接触構造体と、
前記導電性接触構造体のそれぞれの上側表面に直接形成した第1の導電性バリア材料層と、を含み、
前記導電性接触構造体の底部及び側面に導電性バリア材料の第2の層を含み、
前記第1の導電性バリア材料層の上側表面は、前記誘電体層の上側表面より下方にくぼんでおり、前記第1の導電性バリア材料層の前記上側表面は、別の素子に接触するように構成された接触面を含む、構造体。 - 前記導電性接触構造体の上面は、前記誘電体層の前記上側表面より約5〜40nm下方にある、請求項14に記載の構造体。
- 前記導電性バリア材料の第1及び第2の層は、前記導電性接触構造体の全体を取り囲んでいる、請求項14に記載の構造体。
- 第1及び第2のそれぞれの素子上の第1及び第2のダイレクトハイブリッドボンド表面を含む、ボンド構造であって、前記第1及び第2のダイレクトハイブリッドボンド表面のそれぞれは、
誘電体層と、
導電性接触構造体と、
前記導電性接触構造体のそれぞれの上側表面に直接形成した第1の導電性バリア材料層であって、接触面を含む第1の導電性バリア材料層と、を含み、
前記導電性接触構造体の底部及び側面に配置された第2の導電性バリア材料層を含み、
前記第1の導電性バリア材料層は、前記第1及び第2のハイブリッドボンド表面のそれぞれの前記導電性接触構造体の前記上側表面間に配置され、
前記第1及び第2のダイレクトハイブリッドボンド表面の前記誘電体層は、互いに直接接触し、かつ直接ボンディングされており、前記第1及び第2のダイレクトハイブリッドボンド表面の前記第1の導電性バリア材料層は互いに直接接触している、ボンド構造。 - 前記第1及び第2の導電性バリア材料層は、前記導電性接触構造体の全体を取り囲んでいる、請求項17に記載の構造。
- 前記誘電体層は、前記第1の導電性バリア材料層の周囲に配置されている、請求項17に記載の構造。
- 前記導電性接触構造体の前記側面上の第2の導電性バリア材料層が、前記誘電体層のボンド表面と非平行に延びる前記導電性構造体の周辺部の少なくとも一部に沿って配置されている、請求項19に記載の構造。
- 前記第1の導電性バリア材料層は、上側表面を含み、前記第1及び第2のダイレクトハイブリッドボンド表面の前記導電性バリア材料層は、前記上側表面において互いに直接接触している、請求項17に記載の構造。
- 前記第1の導電性バリア材料層のそれぞれは、前記第1の導電性バリア材料層の前記上側表面に対向する下側表面を含み、前記下側表面は、前記導電性接触構造体と直接接触している、請求項21に記載の構造。
- 前記第1の導電性バリア材料層の前記上側表面は、前記第1及び第2のダイレクトハイブリッドボンド表面とほぼ同一平面上にある、請求項21に記載の構造。
- 前記第1の導電性バリア材料層の前記上側表面は、前記誘電体層の前記上側表面より約1〜10nm下方にくぼんでいる、請求項14に記載の構造体。
- 前記第1の導電性バリア材料層の前記上側表面は、前記第1の導電性バリア材料層の前記上側表面上に空洞が形成されるようにくぼんでいる、請求項14に記載の構造体。
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KR20220083859A (ko) | 2022-06-20 |
KR102408487B1 (ko) | 2022-06-13 |
KR102659849B1 (ko) | 2024-04-22 |
TWI702659B (zh) | 2020-08-21 |
CN108140559A (zh) | 2018-06-08 |
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