JPS6130059A
(ja)
|
1984-07-20 |
1986-02-12 |
Nec Corp |
半導体装置の製造方法
|
KR900008647B1
(ko)
|
1986-03-20 |
1990-11-26 |
후지쓰 가부시끼가이샤 |
3차원 집적회로와 그의 제조방법
|
JPH07112041B2
(ja)
|
1986-12-03 |
1995-11-29 |
シャープ株式会社 |
半導体装置の製造方法
|
US4904328A
(en)
|
1987-09-08 |
1990-02-27 |
Gencorp Inc. |
Bonding of FRP parts
|
US4784970A
(en)
|
1987-11-18 |
1988-11-15 |
Grumman Aerospace Corporation |
Process for making a double wafer moated signal processor
|
JPH0272642A
(ja)
|
1988-09-07 |
1990-03-12 |
Nec Corp |
基板の接続構造および接続方法
|
JPH0344067A
(ja)
|
1989-07-11 |
1991-02-25 |
Nec Corp |
半導体基板の積層方法
|
US5489804A
(en)
|
1989-08-28 |
1996-02-06 |
Lsi Logic Corporation |
Flexible preformed planar structures for interposing between a chip and a substrate
|
JP3190057B2
(ja)
|
1990-07-02 |
2001-07-16 |
株式会社東芝 |
複合集積回路装置
|
JP2729413B2
(ja)
|
1991-02-14 |
1998-03-18 |
三菱電機株式会社 |
半導体装置
|
JP2910334B2
(ja)
|
1991-07-22 |
1999-06-23 |
富士電機株式会社 |
接合方法
|
JPH05198739A
(ja)
|
1991-09-10 |
1993-08-06 |
Mitsubishi Electric Corp |
積層型半導体装置およびその製造方法
|
CA2083072C
(en)
|
1991-11-21 |
1998-02-03 |
Shinichi Hasegawa |
Method for manufacturing polyimide multilayer wiring substrate
|
US6008126A
(en)
|
1992-04-08 |
1999-12-28 |
Elm Technology Corporation |
Membrane dielectric isolation IC fabrication
|
US5236118A
(en)
|
1992-05-12 |
1993-08-17 |
The Regents Of The University Of California |
Aligned wafer bonding
|
JPH0682753B2
(ja)
|
1992-09-28 |
1994-10-19 |
株式会社東芝 |
半導体装置の製造方法
|
US5503704A
(en)
|
1993-01-06 |
1996-04-02 |
The Regents Of The University Of California |
Nitrogen based low temperature direct bonding
|
EP0610709B1
(de)
|
1993-02-11 |
1998-06-10 |
Siemens Aktiengesellschaft |
Verfahren zur Herstellung einer dreidimensionalen Schaltungsanordnung
|
US5516727A
(en)
|
1993-04-19 |
1996-05-14 |
International Business Machines Corporation |
Method for encapsulating light emitting diodes
|
JPH0766093A
(ja)
|
1993-08-23 |
1995-03-10 |
Sumitomo Sitix Corp |
半導体ウエーハの貼り合わせ方法およびその装置
|
EP0651449B1
(en)
|
1993-11-01 |
2002-02-13 |
Matsushita Electric Industrial Co., Ltd. |
Electronic component and method for producing the same
|
US5501003A
(en)
|
1993-12-15 |
1996-03-26 |
Bel Fuse Inc. |
Method of assembling electronic packages for surface mount applications
|
US5442235A
(en)
*
|
1993-12-23 |
1995-08-15 |
Motorola Inc. |
Semiconductor device having an improved metal interconnect structure
|
US5413952A
(en)
|
1994-02-02 |
1995-05-09 |
Motorola, Inc. |
Direct wafer bonded structure method of making
|
JP3294934B2
(ja)
|
1994-03-11 |
2002-06-24 |
キヤノン株式会社 |
半導体基板の作製方法及び半導体基板
|
JPH07283382A
(ja)
|
1994-04-12 |
1995-10-27 |
Sony Corp |
シリコン基板のはり合わせ方法
|
KR960009074A
(ko)
|
1994-08-29 |
1996-03-22 |
모리시다 요이치 |
반도체 장치 및 그 제조방법
|
JPH08125121A
(ja)
|
1994-08-29 |
1996-05-17 |
Matsushita Electric Ind Co Ltd |
半導体装置およびその製造方法
|
JP3171366B2
(ja)
|
1994-09-05 |
2001-05-28 |
三菱マテリアル株式会社 |
シリコン半導体ウェーハ及びその製造方法
|
DE4433330C2
(de)
|
1994-09-19 |
1997-01-30 |
Fraunhofer Ges Forschung |
Verfahren zur Herstellung von Halbleiterstrukturen mit vorteilhaften Hochfrequenzeigenschaften sowie eine Halbleiterwaferstruktur
|
DE4433845A1
(de)
|
1994-09-22 |
1996-03-28 |
Fraunhofer Ges Forschung |
Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung
|
JPH08186235A
(ja)
|
1994-12-16 |
1996-07-16 |
Texas Instr Inc <Ti> |
半導体装置の製造方法
|
JP2679681B2
(ja)
|
1995-04-28 |
1997-11-19 |
日本電気株式会社 |
半導体装置、半導体装置用パッケージ及びその製造方法
|
US5610431A
(en)
|
1995-05-12 |
1997-03-11 |
The Charles Stark Draper Laboratory, Inc. |
Covers for micromechanical sensors and other semiconductor devices
|
JP3490198B2
(ja)
|
1995-10-25 |
2004-01-26 |
松下電器産業株式会社 |
半導体装置とその製造方法
|
JP3979687B2
(ja)
|
1995-10-26 |
2007-09-19 |
アプライド マテリアルズ インコーポレイテッド |
ハロゲンをドープした酸化珪素膜の膜安定性を改良する方法
|
KR100438256B1
(ko)
|
1995-12-18 |
2004-08-25 |
마츠시타 덴끼 산교 가부시키가이샤 |
반도체장치 및 그 제조방법
|
US5956605A
(en)
|
1996-09-20 |
1999-09-21 |
Micron Technology, Inc. |
Use of nitrides for flip-chip encapsulation
|
JP3383811B2
(ja)
|
1996-10-28 |
2003-03-10 |
松下電器産業株式会社 |
半導体チップモジュール及びその製造方法
|
US5888631A
(en)
|
1996-11-08 |
1999-03-30 |
W. L. Gore & Associates, Inc. |
Method for minimizing warp in the production of electronic assemblies
|
US6054363A
(en)
|
1996-11-15 |
2000-04-25 |
Canon Kabushiki Kaisha |
Method of manufacturing semiconductor article
|
US5821692A
(en)
|
1996-11-26 |
1998-10-13 |
Motorola, Inc. |
Organic electroluminescent device hermetic encapsulation package
|
US6809421B1
(en)
|
1996-12-02 |
2004-10-26 |
Kabushiki Kaisha Toshiba |
Multichip semiconductor device, chip therefor and method of formation thereof
|
WO1998028788A1
(en)
|
1996-12-24 |
1998-07-02 |
Nitto Denko Corporation |
Manufacture of semiconductor device
|
US6221753B1
(en)
|
1997-01-24 |
2001-04-24 |
Micron Technology, Inc. |
Flip chip technique for chip assembly
|
JPH10223636A
(ja)
|
1997-02-12 |
1998-08-21 |
Nec Yamagata Ltd |
半導体集積回路装置の製造方法
|
JP4026882B2
(ja)
*
|
1997-02-24 |
2007-12-26 |
三洋電機株式会社 |
半導体装置
|
US5929512A
(en)
|
1997-03-18 |
1999-07-27 |
Jacobs; Richard L. |
Urethane encapsulated integrated circuits and compositions therefor
|
US5915167A
(en)
|
1997-04-04 |
1999-06-22 |
Elm Technology Corporation |
Three dimensional structure memory
|
WO1998048453A1
(en)
|
1997-04-23 |
1998-10-29 |
Advanced Chemical Systems International, Inc. |
Planarization compositions for cmp of interlayer dielectrics
|
JP4032454B2
(ja)
|
1997-06-27 |
2008-01-16 |
ソニー株式会社 |
三次元回路素子の製造方法
|
US6097096A
(en)
|
1997-07-11 |
2000-08-01 |
Advanced Micro Devices |
Metal attachment method and structure for attaching substrates at low temperatures
|
JPH11186120A
(ja)
|
1997-12-24 |
1999-07-09 |
Canon Inc |
同種あるいは異種材料基板間の密着接合法
|
US6137063A
(en)
|
1998-02-27 |
2000-10-24 |
Micron Technology, Inc. |
Electrical interconnections
|
EP0951068A1
(en)
|
1998-04-17 |
1999-10-20 |
Interuniversitair Micro-Elektronica Centrum Vzw |
Method of fabrication of a microstructure having an inside cavity
|
US6147000A
(en)
*
|
1998-08-11 |
2000-11-14 |
Advanced Micro Devices, Inc. |
Method for forming low dielectric passivation of copper interconnects
|
US6316786B1
(en)
|
1998-08-29 |
2001-11-13 |
International Business Machines Corporation |
Organic opto-electronic devices
|
JP2000100679A
(ja)
|
1998-09-22 |
2000-04-07 |
Canon Inc |
薄片化による基板間微小領域固相接合法及び素子構造
|
JP2000150810A
(ja)
|
1998-11-17 |
2000-05-30 |
Toshiba Microelectronics Corp |
半導体装置及びその製造方法
|
US6515343B1
(en)
|
1998-11-19 |
2003-02-04 |
Quicklogic Corporation |
Metal-to-metal antifuse with non-conductive diffusion barrier
|
US6232150B1
(en)
|
1998-12-03 |
2001-05-15 |
The Regents Of The University Of Michigan |
Process for making microstructures and microstructures made thereby
|
JP3293792B2
(ja)
|
1999-01-12 |
2002-06-17 |
日本電気株式会社 |
半導体装置及びその製造方法
|
JP3918350B2
(ja)
|
1999-03-05 |
2007-05-23 |
セイコーエプソン株式会社 |
半導体装置の製造方法
|
US6348709B1
(en)
*
|
1999-03-15 |
2002-02-19 |
Micron Technology, Inc. |
Electrical contact for high dielectric constant capacitors and method for fabricating the same
|
JP3532788B2
(ja)
|
1999-04-13 |
2004-05-31 |
唯知 須賀 |
半導体装置及びその製造方法
|
US6259160B1
(en)
*
|
1999-04-21 |
2001-07-10 |
Advanced Micro Devices, Inc. |
Apparatus and method of encapsulated copper (Cu) Interconnect formation
|
JP2000311982A
(ja)
|
1999-04-26 |
2000-11-07 |
Toshiba Corp |
半導体装置と半導体モジュールおよびそれらの製造方法
|
US6258625B1
(en)
|
1999-05-18 |
2001-07-10 |
International Business Machines Corporation |
Method of interconnecting electronic components using a plurality of conductive studs
|
KR100333384B1
(ko)
|
1999-06-28 |
2002-04-18 |
박종섭 |
칩 사이즈 스택 패키지 및 그의 제조방법
|
US6218203B1
(en)
|
1999-06-28 |
2001-04-17 |
Advantest Corp. |
Method of producing a contact structure
|
JP3619395B2
(ja)
|
1999-07-30 |
2005-02-09 |
京セラ株式会社 |
半導体素子内蔵配線基板およびその製造方法
|
US6756253B1
(en)
|
1999-08-27 |
2004-06-29 |
Micron Technology, Inc. |
Method for fabricating a semiconductor component with external contact polymer support layer
|
US6583515B1
(en)
|
1999-09-03 |
2003-06-24 |
Texas Instruments Incorporated |
Ball grid array package for enhanced stress tolerance
|
US6593645B2
(en)
|
1999-09-24 |
2003-07-15 |
United Microelectronics Corp. |
Three-dimensional system-on-chip structure
|
JP2001102479A
(ja)
|
1999-09-27 |
2001-04-13 |
Toshiba Corp |
半導体集積回路装置およびその製造方法
|
US6984571B1
(en)
|
1999-10-01 |
2006-01-10 |
Ziptronix, Inc. |
Three dimensional device integration method and integrated device
|
US6902987B1
(en)
|
2000-02-16 |
2005-06-07 |
Ziptronix, Inc. |
Method for low temperature bonding and bonded structure
|
EP1130654A1
(de)
|
2000-03-01 |
2001-09-05 |
Infineon Technologies AG |
Integriertes Bauelement mit Metall-Isolator-Metall-Kondensator
|
US6373137B1
(en)
*
|
2000-03-21 |
2002-04-16 |
Micron Technology, Inc. |
Copper interconnect for an integrated circuit and methods for its fabrication
|
JP4123682B2
(ja)
|
2000-05-16 |
2008-07-23 |
セイコーエプソン株式会社 |
半導体装置及びその製造方法
|
US6326698B1
(en)
|
2000-06-08 |
2001-12-04 |
Micron Technology, Inc. |
Semiconductor devices having protective layers thereon through which contact pads are exposed and stereolithographic methods of fabricating such semiconductor devices
|
JP4322402B2
(ja)
|
2000-06-22 |
2009-09-02 |
大日本印刷株式会社 |
プリント配線基板及びその製造方法
|
JP2002009248A
(ja)
|
2000-06-26 |
2002-01-11 |
Oki Electric Ind Co Ltd |
キャパシタおよびその製造方法
|
JP3440057B2
(ja)
|
2000-07-05 |
2003-08-25 |
唯知 須賀 |
半導体装置およびその製造方法
|
CN1222195C
(zh)
|
2000-07-24 |
2005-10-05 |
Tdk株式会社 |
发光元件
|
US6423640B1
(en)
|
2000-08-09 |
2002-07-23 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Headless CMP process for oxide planarization
|
US6483044B1
(en)
|
2000-08-23 |
2002-11-19 |
Micron Technology, Inc. |
Interconnecting substrates for electrical coupling of microelectronic components
|
US6583460B1
(en)
*
|
2000-08-29 |
2003-06-24 |
Micron Technology, Inc. |
Method of forming a metal to polysilicon contact in oxygen environment
|
JP2002110799A
(ja)
|
2000-09-27 |
2002-04-12 |
Toshiba Corp |
半導体装置及びその製造方法
|
US6600224B1
(en)
|
2000-10-31 |
2003-07-29 |
International Business Machines Corporation |
Thin film attachment to laminate using a dendritic interconnection
|
US6552436B2
(en)
|
2000-12-08 |
2003-04-22 |
Motorola, Inc. |
Semiconductor device having a ball grid array and method therefor
|
US7084507B2
(en)
|
2001-05-02 |
2006-08-01 |
Fujitsu Limited |
Integrated circuit device and method of producing the same
|
JP2002353416A
(ja)
|
2001-05-25 |
2002-12-06 |
Sony Corp |
半導体記憶装置およびその製造方法
|
JP3705159B2
(ja)
|
2001-06-11 |
2005-10-12 |
株式会社デンソー |
半導体装置の製造方法
|
DE10131627B4
(de)
|
2001-06-29 |
2006-08-10 |
Infineon Technologies Ag |
Verfahren zum Herstellen einer Halbleiterspeichereinrichtung
|
JP2003023071A
(ja)
|
2001-07-05 |
2003-01-24 |
Sony Corp |
半導体装置製造方法および半導体装置
|
US6847527B2
(en)
|
2001-08-24 |
2005-01-25 |
3M Innovative Properties Company |
Interconnect module with reduced power distribution impedance
|
US6555917B1
(en)
|
2001-10-09 |
2003-04-29 |
Amkor Technology, Inc. |
Semiconductor package having stacked semiconductor chips and method of making the same
|
US6667225B2
(en)
|
2001-12-17 |
2003-12-23 |
Intel Corporation |
Wafer-bonding using solder and method of making the same
|
US20030113947A1
(en)
|
2001-12-19 |
2003-06-19 |
Vandentop Gilroy J. |
Electrical/optical integration scheme using direct copper bonding
|
US6660564B2
(en)
|
2002-01-25 |
2003-12-09 |
Sony Corporation |
Wafer-level through-wafer packaging process for MEMS and MEMS package produced thereby
|
US6661085B2
(en)
|
2002-02-06 |
2003-12-09 |
Intel Corporation |
Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stack
|
US6624003B1
(en)
|
2002-02-06 |
2003-09-23 |
Teravicta Technologies, Inc. |
Integrated MEMS device and package
|
US6887769B2
(en)
|
2002-02-06 |
2005-05-03 |
Intel Corporation |
Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same
|
US6762076B2
(en)
|
2002-02-20 |
2004-07-13 |
Intel Corporation |
Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
|
US6720212B2
(en)
|
2002-03-14 |
2004-04-13 |
Infineon Technologies Ag |
Method of eliminating back-end rerouting in ball grid array packaging
|
US6627814B1
(en)
|
2002-03-22 |
2003-09-30 |
David H. Stark |
Hermetically sealed micro-device package with window
|
US6642081B1
(en)
|
2002-04-11 |
2003-11-04 |
Robert Patti |
Interlocking conductor method for bonding wafers to produce stacked integrated circuits
|
US6713402B2
(en)
|
2002-05-31 |
2004-03-30 |
Texas Instruments Incorporated |
Methods for polymer removal following etch-stop layer etch
|
CN1248304C
(zh)
|
2002-06-13 |
2006-03-29 |
松下电器产业株式会社 |
布线结构的形成方法
|
TWI229435B
(en)
|
2002-06-18 |
2005-03-11 |
Sanyo Electric Co |
Manufacture of semiconductor device
|
US7105980B2
(en)
|
2002-07-03 |
2006-09-12 |
Sawtek, Inc. |
Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics
|
JP2004133384A
(ja)
|
2002-08-14 |
2004-04-30 |
Sony Corp |
レジスト用剥離剤組成物及び半導体装置の製造方法
|
JP4083502B2
(ja)
|
2002-08-19 |
2008-04-30 |
株式会社フジミインコーポレーテッド |
研磨方法及びそれに用いられる研磨用組成物
|
US7023093B2
(en)
|
2002-10-24 |
2006-04-04 |
International Business Machines Corporation |
Very low effective dielectric constant interconnect Structures and methods for fabricating the same
|
US7485962B2
(en)
|
2002-12-10 |
2009-02-03 |
Fujitsu Limited |
Semiconductor device, wiring substrate forming method, and substrate processing apparatus
|
JP3918935B2
(ja)
|
2002-12-20 |
2007-05-23 |
セイコーエプソン株式会社 |
半導体装置の製造方法
|
US7354798B2
(en)
|
2002-12-20 |
2008-04-08 |
International Business Machines Corporation |
Three-dimensional device fabrication method
|
KR100598245B1
(ko)
|
2002-12-30 |
2006-07-07 |
동부일렉트로닉스 주식회사 |
반도체 금속 배선 형성 방법
|
JP4173374B2
(ja)
|
2003-01-08 |
2008-10-29 |
株式会社ルネサステクノロジ |
半導体装置の製造方法
|
JP3981026B2
(ja)
|
2003-01-30 |
2007-09-26 |
株式会社東芝 |
多層配線層を有する半導体装置およびその製造方法
|
US6962835B2
(en)
|
2003-02-07 |
2005-11-08 |
Ziptronix, Inc. |
Method for room temperature metal direct bonding
|
US7135780B2
(en)
|
2003-02-12 |
2006-11-14 |
Micron Technology, Inc. |
Semiconductor substrate for build-up packages
|
JP4082236B2
(ja)
|
2003-02-21 |
2008-04-30 |
ソニー株式会社 |
半導体装置及びその製造方法
|
JP4001115B2
(ja)
|
2003-02-28 |
2007-10-31 |
セイコーエプソン株式会社 |
半導体装置及びその製造方法
|
US6908027B2
(en)
|
2003-03-31 |
2005-06-21 |
Intel Corporation |
Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process
|
DE10319538B4
(de)
|
2003-04-30 |
2008-01-17 |
Qimonda Ag |
Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitereinrichtung
|
US7109092B2
(en)
|
2003-05-19 |
2006-09-19 |
Ziptronix, Inc. |
Method of room temperature covalent bonding
|
JP4130158B2
(ja)
|
2003-06-09 |
2008-08-06 |
三洋電機株式会社 |
半導体装置の製造方法、半導体装置
|
TWI275168B
(en)
|
2003-06-06 |
2007-03-01 |
Sanyo Electric Co |
Semiconductor device and method for making the same
|
US20040245636A1
(en)
|
2003-06-06 |
2004-12-09 |
International Business Machines Corporation |
Full removal of dual damascene metal level
|
TWI229930B
(en)
|
2003-06-09 |
2005-03-21 |
Advanced Semiconductor Eng |
Chip structure
|
US20040262772A1
(en)
|
2003-06-30 |
2004-12-30 |
Shriram Ramanathan |
Methods for bonding wafers using a metal interlayer
|
JP2005086089A
(ja)
|
2003-09-10 |
2005-03-31 |
Seiko Epson Corp |
3次元デバイスの製造方法
|
JP2005093486A
(ja)
|
2003-09-12 |
2005-04-07 |
Seiko Epson Corp |
半導体装置の製造方法及び半導体装置
|
US6867073B1
(en)
|
2003-10-21 |
2005-03-15 |
Ziptronix, Inc. |
Single mask via method and device
|
JP2005135988A
(ja)
|
2003-10-28 |
2005-05-26 |
Toshiba Corp |
半導体装置の製造方法
|
DE102004001853B3
(de)
|
2004-01-13 |
2005-07-21 |
Infineon Technologies Ag |
Verfahren zum Herstellen von Kontaktierungsanschlüssen
|
US7842948B2
(en)
|
2004-02-27 |
2010-11-30 |
Nvidia Corporation |
Flip chip semiconductor die internal signal access system and method
|
JP4897201B2
(ja)
|
2004-05-31 |
2012-03-14 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
JP4376715B2
(ja)
|
2004-07-16 |
2009-12-02 |
三洋電機株式会社 |
半導体装置の製造方法
|
KR100618855B1
(ko)
*
|
2004-08-02 |
2006-09-01 |
삼성전자주식회사 |
금속 콘택 구조체 형성방법 및 이를 이용한 상변화 메모리제조방법
|
US20060057945A1
(en)
|
2004-09-16 |
2006-03-16 |
Chia-Lin Hsu |
Chemical mechanical polishing process
|
US20060076634A1
(en)
|
2004-09-27 |
2006-04-13 |
Lauren Palmateer |
Method and system for packaging MEMS devices with incorporated getter
|
KR100580212B1
(ko)
|
2004-12-20 |
2006-05-16 |
삼성전자주식회사 |
급지장치 및 이를 구비하는 화상형성장치
|
GB0505680D0
(en)
|
2005-03-22 |
2005-04-27 |
Cambridge Display Tech Ltd |
Apparatus and method for increased device lifetime in an organic electro-luminescent device
|
US7485968B2
(en)
|
2005-08-11 |
2009-02-03 |
Ziptronix, Inc. |
3D IC method and device
|
US7193423B1
(en)
|
2005-12-12 |
2007-03-20 |
International Business Machines Corporation |
Wafer-to-wafer alignments
|
US7348648B2
(en)
|
2006-03-13 |
2008-03-25 |
International Business Machines Corporation |
Interconnect structure with a barrier-redundancy feature
|
TWI299552B
(en)
|
2006-03-24 |
2008-08-01 |
Advanced Semiconductor Eng |
Package structure
|
US7972683B2
(en)
|
2006-03-28 |
2011-07-05 |
Innovative Micro Technology |
Wafer bonding material with embedded conductive particles
|
US7750488B2
(en)
|
2006-07-10 |
2010-07-06 |
Tezzaron Semiconductor, Inc. |
Method for bonding wafers to produce stacked integrated circuits
|
KR100825648B1
(ko)
*
|
2006-11-29 |
2008-04-25 |
동부일렉트로닉스 주식회사 |
반도체 소자 및 그 제조 방법
|
US7803693B2
(en)
|
2007-02-15 |
2010-09-28 |
John Trezza |
Bowed wafer hybridization compensation
|
KR100850212B1
(ko)
*
|
2007-04-20 |
2008-08-04 |
삼성전자주식회사 |
균일한 무전해 도금 두께를 얻을 수 있는 반도체 소자의제조방법
|
DE102008007001B4
(de)
*
|
2008-01-31 |
2016-09-22 |
Globalfoundries Dresden Module One Limited Liability Company & Co. Kg |
Vergrößern des Widerstandsverhaltens gegenüber Elektromigration in einer Verbindungsstruktur eines Halbleiterbauelements durch Bilden einer Legierung
|
US20090200668A1
(en)
*
|
2008-02-07 |
2009-08-13 |
International Business Machines Corporation |
Interconnect structure with high leakage resistance
|
US8349635B1
(en)
|
2008-05-20 |
2013-01-08 |
Silicon Laboratories Inc. |
Encapsulated MEMS device and method to form the same
|
US9893004B2
(en)
|
2011-07-27 |
2018-02-13 |
Broadpak Corporation |
Semiconductor interposer integration
|
KR100945800B1
(ko)
|
2008-12-09 |
2010-03-05 |
김영혜 |
이종 접합 웨이퍼 제조방법
|
US8476165B2
(en)
|
2009-04-01 |
2013-07-02 |
Tokyo Electron Limited |
Method for thinning a bonding wafer
|
US8101517B2
(en)
*
|
2009-09-29 |
2012-01-24 |
Infineon Technologies Ag |
Semiconductor device and method for making same
|
US8482132B2
(en)
*
|
2009-10-08 |
2013-07-09 |
International Business Machines Corporation |
Pad bonding employing a self-aligned plated liner for adhesion enhancement
|
FR2954585B1
(fr)
|
2009-12-23 |
2012-03-02 |
Soitec Silicon Insulator Technologies |
Procede de realisation d'une heterostructure avec minimisation de contrainte
|
US9217192B2
(en)
*
|
2010-03-01 |
2015-12-22 |
Osaka University |
Semiconductor device and bonding material for semiconductor device
|
JP5517800B2
(ja)
|
2010-07-09 |
2014-06-11 |
キヤノン株式会社 |
固体撮像装置用の部材および固体撮像装置の製造方法
|
FR2966283B1
(fr)
|
2010-10-14 |
2012-11-30 |
Soi Tec Silicon On Insulator Tech Sa |
Procede pour realiser une structure de collage
|
US8377798B2
(en)
|
2010-11-10 |
2013-02-19 |
Taiwan Semiconductor Manufacturing Co., Ltd |
Method and structure for wafer to wafer bonding in semiconductor packaging
|
US8476146B2
(en)
|
2010-12-03 |
2013-07-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Reducing wafer distortion through a low CTE layer
|
US8778773B2
(en)
*
|
2010-12-16 |
2014-07-15 |
Soitec |
Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods
|
US8620164B2
(en)
|
2011-01-20 |
2013-12-31 |
Intel Corporation |
Hybrid III-V silicon laser formed by direct bonding
|
US8988299B2
(en)
|
2011-02-17 |
2015-03-24 |
International Business Machines Corporation |
Integrated antenna for RFIC package applications
|
JP2012174988A
(ja)
*
|
2011-02-23 |
2012-09-10 |
Sony Corp |
接合電極、接合電極の製造方法、半導体装置、及び、半導体装置の製造方法
|
US8716105B2
(en)
|
2011-03-31 |
2014-05-06 |
Soitec |
Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods
|
US8501537B2
(en)
|
2011-03-31 |
2013-08-06 |
Soitec |
Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods
|
EP2717300B1
(en)
|
2011-05-24 |
2020-03-18 |
Sony Corporation |
Semiconductor device
|
JP5982748B2
(ja)
|
2011-08-01 |
2016-08-31 |
ソニー株式会社 |
半導体装置、半導体装置の製造方法、および電子機器
|
US8896125B2
(en)
|
2011-07-05 |
2014-11-25 |
Sony Corporation |
Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
|
US8697493B2
(en)
|
2011-07-18 |
2014-04-15 |
Soitec |
Bonding surfaces for direct bonding of semiconductor structures
|
US8441131B2
(en)
|
2011-09-12 |
2013-05-14 |
Globalfoundries Inc. |
Strain-compensating fill patterns for controlling semiconductor chip package interactions
|
FR2986904A1
(fr)
*
|
2012-02-14 |
2013-08-16 |
St Microelectronics Crolles 2 |
Systeme d'assemblage de puces
|
US8796853B2
(en)
*
|
2012-02-24 |
2014-08-05 |
International Business Machines Corporation |
Metallic capped interconnect structure with high electromigration resistance and low resistivity
|
CN103377911B
(zh)
|
2012-04-16 |
2016-09-21 |
中国科学院微电子研究所 |
提高化学机械平坦化工艺均匀性的方法
|
TWI498975B
(zh)
*
|
2012-04-26 |
2015-09-01 |
Asian Pacific Microsystems Inc |
封裝結構與基材的接合方法
|
US8809123B2
(en)
|
2012-06-05 |
2014-08-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers
|
US9142517B2
(en)
|
2012-06-05 |
2015-09-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Hybrid bonding mechanisms for semiconductor wafers
|
US8772946B2
(en)
*
|
2012-06-08 |
2014-07-08 |
Invensas Corporation |
Reduced stress TSV and interposer structures
|
US8735219B2
(en)
|
2012-08-30 |
2014-05-27 |
Ziptronix, Inc. |
Heterogeneous annealing method and device
|
DE102012224310A1
(de)
|
2012-12-21 |
2014-06-26 |
Tesa Se |
Gettermaterial enthaltendes Klebeband
|
US20140175655A1
(en)
|
2012-12-22 |
2014-06-26 |
Industrial Technology Research Institute |
Chip bonding structure and manufacturing method thereof
|
US8916448B2
(en)
|
2013-01-09 |
2014-12-23 |
International Business Machines Corporation |
Metal to metal bonding for stacked (3D) integrated circuits
|
TWI518991B
(zh)
|
2013-02-08 |
2016-01-21 |
Sj Antenna Design |
Integrated antenna and integrated circuit components of the shielding module
|
US8946784B2
(en)
|
2013-02-18 |
2015-02-03 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method and apparatus for image sensor packaging
|
US9105485B2
(en)
|
2013-03-08 |
2015-08-11 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Bonding structures and methods of forming the same
|
US8802538B1
(en)
|
2013-03-15 |
2014-08-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods for hybrid wafer bonding
|
US9443796B2
(en)
|
2013-03-15 |
2016-09-13 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Air trench in packages incorporating hybrid bonding
|
US9064937B2
(en)
|
2013-05-30 |
2015-06-23 |
International Business Machines Corporation |
Substrate bonding with diffusion barrier structures
|
US9929050B2
(en)
|
2013-07-16 |
2018-03-27 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Mechanisms for forming three-dimensional integrated circuit (3DIC) stacking structure
|
US9723716B2
(en)
|
2013-09-27 |
2017-08-01 |
Infineon Technologies Ag |
Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure
|
US9257399B2
(en)
|
2013-10-17 |
2016-02-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
3D integrated circuit and methods of forming the same
|
US9159610B2
(en)
*
|
2013-10-23 |
2015-10-13 |
Globalfoundires, Inc. |
Hybrid manganese and manganese nitride barriers for back-end-of-line metallization and methods for fabricating the same
|
JP2015115446A
(ja)
|
2013-12-11 |
2015-06-22 |
株式会社東芝 |
半導体装置の製造方法
|
US9437572B2
(en)
|
2013-12-18 |
2016-09-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Conductive pad structure for hybrid bonding and methods of forming same
|
US9865523B2
(en)
*
|
2014-01-17 |
2018-01-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Robust through-silicon-via structure
|
US20150262902A1
(en)
|
2014-03-12 |
2015-09-17 |
Invensas Corporation |
Integrated circuits protected by substrates with cavities, and methods of manufacture
|
US9230941B2
(en)
|
2014-03-28 |
2016-01-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Bonding structure for stacked semiconductor devices
|
US9299736B2
(en)
|
2014-03-28 |
2016-03-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Hybrid bonding with uniform pattern density
|
US9472458B2
(en)
|
2014-06-04 |
2016-10-18 |
Semiconductor Components Industries, Llc |
Method of reducing residual contamination in singulated semiconductor die
|
KR102275705B1
(ko)
|
2014-07-11 |
2021-07-09 |
삼성전자주식회사 |
웨이퍼 대 웨이퍼 접합 구조
|
US9455182B2
(en)
|
2014-08-22 |
2016-09-27 |
International Business Machines Corporation |
Interconnect structure with capping layer and barrier layer
|
US9536848B2
(en)
|
2014-10-16 |
2017-01-03 |
Globalfoundries Inc. |
Bond pad structure for low temperature flip chip bonding
|
US9394161B2
(en)
|
2014-11-14 |
2016-07-19 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
MEMS and CMOS integration with low-temperature bonding
|
US11069734B2
(en)
|
2014-12-11 |
2021-07-20 |
Invensas Corporation |
Image sensor device
|
US9741620B2
(en)
|
2015-06-24 |
2017-08-22 |
Invensas Corporation |
Structures and methods for reliable packages
|
US9656852B2
(en)
|
2015-07-06 |
2017-05-23 |
Taiwan Semiconductor Manufacturing Company Ltd. |
CMOS-MEMS device structure, bonding mesa structure and associated method
|
US10075657B2
(en)
|
2015-07-21 |
2018-09-11 |
Fermi Research Alliance, Llc |
Edgeless large area camera system
|
US9728521B2
(en)
|
2015-07-23 |
2017-08-08 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hybrid bond using a copper alloy for yield improvement
|
US9559081B1
(en)
|
2015-08-21 |
2017-01-31 |
Apple Inc. |
Independent 3D stacking
|
US9953941B2
(en)
|
2015-08-25 |
2018-04-24 |
Invensas Bonding Technologies, Inc. |
Conductive barrier direct hybrid bonding
|
US9496239B1
(en)
|
2015-12-11 |
2016-11-15 |
International Business Machines Corporation |
Nitride-enriched oxide-to-oxide 3D wafer bonding
|
US9852988B2
(en)
|
2015-12-18 |
2017-12-26 |
Invensas Bonding Technologies, Inc. |
Increased contact alignment tolerance for direct bonding
|
US9881882B2
(en)
|
2016-01-06 |
2018-01-30 |
Mediatek Inc. |
Semiconductor package with three-dimensional antenna
|
US9923011B2
(en)
|
2016-01-12 |
2018-03-20 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor device structure with stacked semiconductor dies
|
US10446532B2
(en)
|
2016-01-13 |
2019-10-15 |
Invensas Bonding Technologies, Inc. |
Systems and methods for efficient transfer of semiconductor elements
|
US10636767B2
(en)
|
2016-02-29 |
2020-04-28 |
Invensas Corporation |
Correction die for wafer/die stack
|
US10026716B2
(en)
|
2016-04-15 |
2018-07-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
3DIC formation with dies bonded to formed RDLs
|
US10204893B2
(en)
|
2016-05-19 |
2019-02-12 |
Invensas Bonding Technologies, Inc. |
Stacked dies and methods for forming bonded structures
|
KR102505856B1
(ko)
|
2016-06-09 |
2023-03-03 |
삼성전자 주식회사 |
웨이퍼 대 웨이퍼 접합 구조체
|
US9941241B2
(en)
|
2016-06-30 |
2018-04-10 |
International Business Machines Corporation |
Method for wafer-wafer bonding
|
US10446487B2
(en)
|
2016-09-30 |
2019-10-15 |
Invensas Bonding Technologies, Inc. |
Interface structures and methods for forming same
|
US10163750B2
(en)
|
2016-12-05 |
2018-12-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Package structure for heat dissipation
|
US10453832B2
(en)
|
2016-12-15 |
2019-10-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Seal ring structures and methods of forming same
|
US10002844B1
(en)
|
2016-12-21 |
2018-06-19 |
Invensas Bonding Technologies, Inc. |
Bonded structures
|
CN110178212B
(zh)
|
2016-12-28 |
2024-01-09 |
艾德亚半导体接合科技有限公司 |
堆栈基板的处理
|
US20180182665A1
(en)
|
2016-12-28 |
2018-06-28 |
Invensas Bonding Technologies, Inc. |
Processed Substrate
|
US20180190583A1
(en)
|
2016-12-29 |
2018-07-05 |
Invensas Bonding Technologies, Inc. |
Bonded structures with integrated passive component
|
TWI837879B
(zh)
|
2016-12-29 |
2024-04-01 |
美商艾德亞半導體接合科技有限公司 |
具有整合式被動構件的接合結構
|
US10276909B2
(en)
|
2016-12-30 |
2019-04-30 |
Invensas Bonding Technologies, Inc. |
Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein
|
US10431614B2
(en)
|
2017-02-01 |
2019-10-01 |
Semiconductor Components Industries, Llc |
Edge seals for semiconductor packages
|
TWI738947B
(zh)
|
2017-02-09 |
2021-09-11 |
美商英帆薩斯邦德科技有限公司 |
接合結構與形成接合結構的方法
|
US10508030B2
(en)
|
2017-03-21 |
2019-12-17 |
Invensas Bonding Technologies, Inc. |
Seal for microelectronic assembly
|
JP6640780B2
(ja)
|
2017-03-22 |
2020-02-05 |
キオクシア株式会社 |
半導体装置の製造方法および半導体装置
|
WO2018183739A1
(en)
|
2017-03-31 |
2018-10-04 |
Invensas Bonding Technologies, Inc. |
Interface structures and methods for forming same
|
US10269756B2
(en)
|
2017-04-21 |
2019-04-23 |
Invensas Bonding Technologies, Inc. |
Die processing
|
US10580823B2
(en)
|
2017-05-03 |
2020-03-03 |
United Microelectronics Corp. |
Wafer level packaging method
|
US10879212B2
(en)
|
2017-05-11 |
2020-12-29 |
Invensas Bonding Technologies, Inc. |
Processed stacked dies
|
US10217720B2
(en)
|
2017-06-15 |
2019-02-26 |
Invensas Corporation |
Multi-chip modules formed using wafer-level processing of a reconstitute wafer
|
US10840205B2
(en)
|
2017-09-24 |
2020-11-17 |
Invensas Bonding Technologies, Inc. |
Chemical mechanical polishing for hybrid bonding
|
US11195748B2
(en)
|
2017-09-27 |
2021-12-07 |
Invensas Corporation |
Interconnect structures and methods for forming same
|
US11251157B2
(en)
|
2017-11-01 |
2022-02-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Die stack structure with hybrid bonding structure and method of fabricating the same and package
|
CN107748879A
(zh)
|
2017-11-16 |
2018-03-02 |
百度在线网络技术(北京)有限公司 |
用于获取人脸信息的方法及装置
|
US10923408B2
(en)
|
2017-12-22 |
2021-02-16 |
Invensas Bonding Technologies, Inc. |
Cavity packages
|
US11380597B2
(en)
|
2017-12-22 |
2022-07-05 |
Invensas Bonding Technologies, Inc. |
Bonded structures
|
US10727219B2
(en)
|
2018-02-15 |
2020-07-28 |
Invensas Bonding Technologies, Inc. |
Techniques for processing devices
|
US11169326B2
(en)
|
2018-02-26 |
2021-11-09 |
Invensas Bonding Technologies, Inc. |
Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
|
US11398258B2
(en)
|
2018-04-30 |
2022-07-26 |
Invensas Llc |
Multi-die module with low power operation
|
US11004757B2
(en)
|
2018-05-14 |
2021-05-11 |
Invensas Bonding Technologies, Inc. |
Bonded structures
|
US11393779B2
(en)
|
2018-06-13 |
2022-07-19 |
Invensas Bonding Technologies, Inc. |
Large metal pads over TSV
|
US11664357B2
(en)
|
2018-07-03 |
2023-05-30 |
Adeia Semiconductor Bonding Technologies Inc. |
Techniques for joining dissimilar materials in microelectronics
|
US11462419B2
(en)
|
2018-07-06 |
2022-10-04 |
Invensas Bonding Technologies, Inc. |
Microelectronic assemblies
|
US11011494B2
(en)
|
2018-08-31 |
2021-05-18 |
Invensas Bonding Technologies, Inc. |
Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
|
US11158573B2
(en)
|
2018-10-22 |
2021-10-26 |
Invensas Bonding Technologies, Inc. |
Interconnect structures
|
US11244920B2
(en)
|
2018-12-18 |
2022-02-08 |
Invensas Bonding Technologies, Inc. |
Method and structures for low temperature device bonding
|
US11476213B2
(en)
|
2019-01-14 |
2022-10-18 |
Invensas Bonding Technologies, Inc. |
Bonded structures without intervening adhesive
|
US11901281B2
(en)
|
2019-03-11 |
2024-02-13 |
Adeia Semiconductor Bonding Technologies Inc. |
Bonded structures with integrated passive component
|
US11610846B2
(en)
|
2019-04-12 |
2023-03-21 |
Adeia Semiconductor Bonding Technologies Inc. |
Protective elements for bonded structures including an obstructive element
|
US11373963B2
(en)
|
2019-04-12 |
2022-06-28 |
Invensas Bonding Technologies, Inc. |
Protective elements for bonded structures
|
US11205625B2
(en)
|
2019-04-12 |
2021-12-21 |
Invensas Bonding Technologies, Inc. |
Wafer-level bonding of obstructive elements
|
US11385278B2
(en)
|
2019-05-23 |
2022-07-12 |
Invensas Bonding Technologies, Inc. |
Security circuitry for bonded structures
|
US20200395321A1
(en)
|
2019-06-12 |
2020-12-17 |
Invensas Bonding Technologies, Inc. |
Sealed bonded structures and methods for forming the same
|
US11762200B2
(en)
|
2019-12-17 |
2023-09-19 |
Adeia Semiconductor Bonding Technologies Inc. |
Bonded optical devices
|
WO2021133741A1
(en)
|
2019-12-23 |
2021-07-01 |
Invensas Bonding Technologies, Inc. |
Electrical redundancy for bonded structures
|
US11721653B2
(en)
|
2019-12-23 |
2023-08-08 |
Adeia Semiconductor Bonding Technologies Inc. |
Circuitry for electrical redundancy in bonded structures
|
US20210242152A1
(en)
|
2020-02-05 |
2021-08-05 |
Invensas Bonding Technologies, Inc. |
Selective alteration of interconnect pads for direct bonding
|
CN115943489A
(zh)
|
2020-03-19 |
2023-04-07 |
隔热半导体粘合技术公司 |
用于直接键合结构的尺寸补偿控制
|