JP5222636B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5222636B2
JP5222636B2 JP2008168841A JP2008168841A JP5222636B2 JP 5222636 B2 JP5222636 B2 JP 5222636B2 JP 2008168841 A JP2008168841 A JP 2008168841A JP 2008168841 A JP2008168841 A JP 2008168841A JP 5222636 B2 JP5222636 B2 JP 5222636B2
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conductive layer
semiconductor
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transistor
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JP2009033145A (ja
JP2009033145A5 (enExample
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肇 木村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Shift Register Type Memory (AREA)
JP2008168841A 2007-06-29 2008-06-27 半導体装置の作製方法 Active JP5222636B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008168841A JP5222636B2 (ja) 2007-06-29 2008-06-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007173311 2007-06-29
JP2007173311 2007-06-29
JP2008168841A JP5222636B2 (ja) 2007-06-29 2008-06-27 半導体装置の作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010023770A Division JP5292330B2 (ja) 2007-06-29 2010-02-05 半導体装置
JP2013047801A Division JP5684308B2 (ja) 2007-06-29 2013-03-11 半導体装置

Publications (3)

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JP2009033145A JP2009033145A (ja) 2009-02-12
JP2009033145A5 JP2009033145A5 (enExample) 2011-06-02
JP5222636B2 true JP5222636B2 (ja) 2013-06-26

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Family Applications (15)

Application Number Title Priority Date Filing Date
JP2008168841A Active JP5222636B2 (ja) 2007-06-29 2008-06-27 半導体装置の作製方法
JP2010023770A Expired - Fee Related JP5292330B2 (ja) 2007-06-29 2010-02-05 半導体装置
JP2013047801A Expired - Fee Related JP5684308B2 (ja) 2007-06-29 2013-03-11 半導体装置
JP2015004652A Withdrawn JP2015111706A (ja) 2007-06-29 2015-01-14 半導体装置
JP2016205626A Withdrawn JP2017034275A (ja) 2007-06-29 2016-10-20 表示装置
JP2018080320A Active JP6642950B2 (ja) 2007-06-29 2018-04-19 表示装置
JP2019104399A Active JP6756012B2 (ja) 2007-06-29 2019-06-04 表示装置
JP2020000039A Active JP6756060B2 (ja) 2007-06-29 2020-01-05 表示装置
JP2020142676A Expired - Fee Related JP6838191B2 (ja) 2007-06-29 2020-08-26 表示装置
JP2020142549A Withdrawn JP2021005091A (ja) 2007-06-29 2020-08-26 表示装置
JP2021092972A Active JP6978625B2 (ja) 2007-06-29 2021-06-02 表示装置
JP2021205781A Active JP7129539B2 (ja) 2007-06-29 2021-12-20 表示装置
JP2022131735A Active JP7293473B2 (ja) 2007-06-29 2022-08-22 表示装置
JP2023094161A Active JP7584571B2 (ja) 2007-06-29 2023-06-07 表示装置
JP2024193695A Active JP7739574B2 (ja) 2007-06-29 2024-11-05 表示装置

Family Applications After (14)

Application Number Title Priority Date Filing Date
JP2010023770A Expired - Fee Related JP5292330B2 (ja) 2007-06-29 2010-02-05 半導体装置
JP2013047801A Expired - Fee Related JP5684308B2 (ja) 2007-06-29 2013-03-11 半導体装置
JP2015004652A Withdrawn JP2015111706A (ja) 2007-06-29 2015-01-14 半導体装置
JP2016205626A Withdrawn JP2017034275A (ja) 2007-06-29 2016-10-20 表示装置
JP2018080320A Active JP6642950B2 (ja) 2007-06-29 2018-04-19 表示装置
JP2019104399A Active JP6756012B2 (ja) 2007-06-29 2019-06-04 表示装置
JP2020000039A Active JP6756060B2 (ja) 2007-06-29 2020-01-05 表示装置
JP2020142676A Expired - Fee Related JP6838191B2 (ja) 2007-06-29 2020-08-26 表示装置
JP2020142549A Withdrawn JP2021005091A (ja) 2007-06-29 2020-08-26 表示装置
JP2021092972A Active JP6978625B2 (ja) 2007-06-29 2021-06-02 表示装置
JP2021205781A Active JP7129539B2 (ja) 2007-06-29 2021-12-20 表示装置
JP2022131735A Active JP7293473B2 (ja) 2007-06-29 2022-08-22 表示装置
JP2023094161A Active JP7584571B2 (ja) 2007-06-29 2023-06-07 表示装置
JP2024193695A Active JP7739574B2 (ja) 2007-06-29 2024-11-05 表示装置

Country Status (4)

Country Link
US (7) US8354674B2 (enExample)
JP (15) JP5222636B2 (enExample)
CN (2) CN102543865B (enExample)
TW (2) TWI466235B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20130038936A (ko) * 2010-07-27 2013-04-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법

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CN101656769B (zh) * 2008-08-22 2012-10-10 清华大学 移动电话
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