|
US3576755A
(en)
|
1964-09-24 |
1971-04-27 |
American Cyanamid Co |
Photochromism in plastic film containing inorganic materials
|
|
US3442648A
(en)
|
1965-06-16 |
1969-05-06 |
American Cyanamid Co |
Photographic dodging method
|
|
US3513010A
(en)
|
1966-07-11 |
1970-05-19 |
Kalvar Corp |
Conversion foil
|
|
US3529963A
(en)
|
1966-08-23 |
1970-09-22 |
Du Pont |
Image-yielding elements and processes
|
|
US3720515A
(en)
|
1971-10-20 |
1973-03-13 |
Trw Inc |
Microelectronic circuit production
|
|
JPS5119974A
(en)
|
1974-08-12 |
1976-02-17 |
Fujitsu Ltd |
Kibanjoheno pataanno sentakukeiseiho
|
|
US4341592A
(en)
|
1975-08-04 |
1982-07-27 |
Texas Instruments Incorporated |
Method for removing photoresist layer from substrate by ozone treatment
|
|
US4061829A
(en)
|
1976-04-26 |
1977-12-06 |
Bell Telephone Laboratories, Incorporated |
Negative resist for X-ray and electron beam lithography and method of using same
|
|
US4292384A
(en)
|
1977-09-30 |
1981-09-29 |
Horizons Research Incorporated |
Gaseous plasma developing and etching process employing low voltage DC generation
|
|
US4241165A
(en)
|
1978-09-05 |
1980-12-23 |
Motorola, Inc. |
Plasma development process for photoresist
|
|
US4328298A
(en)
|
1979-06-27 |
1982-05-04 |
The Perkin-Elmer Corporation |
Process for manufacturing lithography masks
|
|
US4314022A
(en)
|
1980-05-05 |
1982-02-02 |
Minnesota Mining And Manufacturing Company |
Photoresist developers and process
|
|
US4396704A
(en)
|
1981-04-22 |
1983-08-02 |
Bell Telephone Laboratories, Incorporated |
Solid state devices produced by organometallic plasma developed resists
|
|
JPS5883847A
(ja)
|
1981-11-14 |
1983-05-19 |
Konishiroku Photo Ind Co Ltd |
金属画像形成材料用処理液
|
|
JPS58108744A
(ja)
|
1981-12-23 |
1983-06-28 |
Mitsubishi Electric Corp |
集積回路の製造方法
|
|
JPS6074626A
(ja)
|
1983-09-30 |
1985-04-26 |
Fujitsu Ltd |
ウエハー処理方法及び装置
|
|
JPS60115222A
(ja)
|
1983-11-28 |
1985-06-21 |
Tokyo Ohka Kogyo Co Ltd |
微細パタ−ン形成方法
|
|
JPS6112653U
(ja)
|
1984-06-25 |
1986-01-24 |
日本電気株式会社 |
バキユ−ムチヤツク
|
|
JPS62160981A
(ja)
|
1986-01-08 |
1987-07-16 |
Mitsubishi Heavy Ind Ltd |
石油タンカ−の改造法
|
|
JPS61234035A
(ja)
|
1985-03-29 |
1986-10-18 |
Fujitsu Ltd |
遠紫外線照射ドライ現像方法
|
|
JPH0778629B2
(ja)
|
1986-12-19 |
1995-08-23 |
ミノルタ株式会社 |
ポジ型レジスト膜及びそのレジストパターンの形成方法
|
|
US5077085A
(en)
|
1987-03-06 |
1991-12-31 |
Schnur Joel M |
High resolution metal patterning of ultra-thin films on solid substrates
|
|
US4814243A
(en)
|
1987-09-08 |
1989-03-21 |
American Telephone And Telegraph Company |
Thermal processing of photoresist materials
|
|
US4834834A
(en)
|
1987-11-20 |
1989-05-30 |
Massachusetts Institute Of Technology |
Laser photochemical etching using surface halogenation
|
|
US4845053A
(en)
|
1988-01-25 |
1989-07-04 |
John Zajac |
Flame ashing process for stripping photoresist
|
|
KR920004176B1
(ko)
|
1988-03-16 |
1992-05-30 |
후지쓰 가부시끼가이샤 |
레지스트 패턴 형성 공정
|
|
US4940854A
(en)
|
1988-07-13 |
1990-07-10 |
Minnesota Mining And Manufacturing Company |
Organic thin film controlled molecular epitaxy
|
|
US5094936A
(en)
|
1988-09-16 |
1992-03-10 |
Texas Instruments Incorporated |
High pressure photoresist silylation process and apparatus
|
|
JPH04226462A
(ja)
|
1990-06-29 |
1992-08-17 |
Fujitsu Ltd |
レジスト材料およびそれを用いるレジストパターンの形成方法
|
|
DE69130594T2
(de)
|
1990-06-29 |
1999-05-06 |
Fujitsu Ltd., Kawasaki, Kanagawa |
Verfahren zur Erzeugung eines Musters
|
|
US5240554A
(en)
|
1991-01-22 |
1993-08-31 |
Kabushiki Kaisha Toshiba |
Method of manufacturing semiconductor device
|
|
US5206706A
(en)
|
1991-07-01 |
1993-04-27 |
Bell Communications Research, Inc. |
Alignment of an ellipsometer or other optical instrument using a diffraction grating
|
|
US5322765A
(en)
|
1991-11-22 |
1994-06-21 |
International Business Machines Corporation |
Dry developable photoresist compositions and method for use thereof
|
|
US6013418A
(en)
|
1992-04-29 |
2000-01-11 |
Lucent Technologies Inc. |
Method for developing images in energy sensitive materials
|
|
GEP20002074B
(en)
|
1992-05-19 |
2000-05-10 |
Westaim Tech Inc Ca |
Modified Material and Method for its Production
|
|
JPH0637050A
(ja)
|
1992-07-14 |
1994-02-10 |
Oki Electric Ind Co Ltd |
半導体ウエハのドライエッチング装置
|
|
JP2601112B2
(ja)
|
1992-11-30 |
1997-04-16 |
日本電気株式会社 |
半導体装置の製造方法
|
|
JPH06232041A
(ja)
|
1993-02-05 |
1994-08-19 |
Hitachi Ltd |
パターン形成方法
|
|
JPH06332196A
(ja)
*
|
1993-05-24 |
1994-12-02 |
Nippon Paint Co Ltd |
レジストパターンの形成方法
|
|
KR960010727B1
(ko)
|
1993-06-03 |
1996-08-07 |
현대전자산업 주식회사 |
반도체 제조용 포토레지스트 제거방법
|
|
EP0635884A1
(de)
|
1993-07-13 |
1995-01-25 |
Siemens Aktiengesellschaft |
Verfahren zur Herstellung eines Grabens in einem Substrat und dessen Verwendung in der Smart-Power-Technologie
|
|
JP3654597B2
(ja)
|
1993-07-15 |
2005-06-02 |
株式会社ルネサステクノロジ |
製造システムおよび製造方法
|
|
JPH07106224A
(ja)
|
1993-10-01 |
1995-04-21 |
Hitachi Ltd |
パターン形成方法
|
|
JPH07161607A
(ja)
|
1993-12-03 |
1995-06-23 |
Hitachi Ltd |
パターン形成方法及びパターン形成装置
|
|
JP3316078B2
(ja)
|
1994-03-04 |
2002-08-19 |
日本表面化学株式会社 |
レジスト剥離液
|
|
JP3309095B2
(ja)
|
1994-08-30 |
2002-07-29 |
株式会社日立製作所 |
ドライ現像方法及び半導体装置の製造方法
|
|
US5534312A
(en)
|
1994-11-14 |
1996-07-09 |
Simon Fraser University |
Method for directly depositing metal containing patterned films
|
|
JP3258199B2
(ja)
|
1995-05-24 |
2002-02-18 |
沖電気工業株式会社 |
半導体装置のパターン形成方法
|
|
JPH08339950A
(ja)
|
1995-06-09 |
1996-12-24 |
Sony Corp |
フォトレジストパターン形成方法及びフォトレジスト処理装置
|
|
US6007963A
(en)
|
1995-09-21 |
1999-12-28 |
Sandia Corporation |
Method for extreme ultraviolet lithography
|
|
JPH09172022A
(ja)
|
1995-12-19 |
1997-06-30 |
Toshiba Corp |
半導体装置の製造方法
|
|
US5925494A
(en)
|
1996-02-16 |
1999-07-20 |
Massachusetts Institute Of Technology |
Vapor deposition of polymer films for photolithography
|
|
JPH09312247A
(ja)
|
1996-05-21 |
1997-12-02 |
Hitachi Ltd |
パターン形成方法及びパターン形成装置
|
|
JPH1041206A
(ja)
|
1996-07-19 |
1998-02-13 |
Toshiba Corp |
半導体処理装置および処理方法
|
|
US5914278A
(en)
|
1997-01-23 |
1999-06-22 |
Gasonics International |
Backside etch process chamber and method
|
|
JPH10209133A
(ja)
|
1997-01-28 |
1998-08-07 |
Toshiba Corp |
プラズマ灰化装置およびプラズマ灰化方法
|
|
US6261938B1
(en)
|
1997-02-12 |
2001-07-17 |
Quantiscript, Inc. |
Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
|
|
JPH10301298A
(ja)
|
1997-02-28 |
1998-11-13 |
Toyobo Co Ltd |
感光性樹脂版の現像液および現像方法
|
|
US6149828A
(en)
|
1997-05-05 |
2000-11-21 |
Micron Technology, Inc. |
Supercritical etching compositions and method of using same
|
|
JP3477077B2
(ja)
|
1997-07-01 |
2003-12-10 |
株式会社東芝 |
ネガ型感光性樹脂組成物、これを用いたパターン形成方法、および電子部品
|
|
US6045877A
(en)
|
1997-07-28 |
2000-04-04 |
Massachusetts Institute Of Technology |
Pyrolytic chemical vapor deposition of silicone films
|
|
KR100265766B1
(ko)
|
1997-09-04 |
2000-09-15 |
윤종용 |
반도체장치 제조용 웨이퍼의 리워크방법 및 반도체장치의 제조방법
|
|
US6096484A
(en)
|
1997-10-15 |
2000-08-01 |
Kabushiki Kaisha Toshiba |
Pattern forming method using chemically amplified resist and apparatus for treating chemically amplified resist
|
|
KR100270908B1
(ko)
|
1998-02-19 |
2000-12-01 |
노건일 |
진공리소그래피공정및레지스트박막
|
|
US6179924B1
(en)
|
1998-04-28 |
2001-01-30 |
Applied Materials, Inc. |
Heater for use in substrate processing apparatus to deposit tungsten
|
|
US6290779B1
(en)
|
1998-06-12 |
2001-09-18 |
Tokyo Electron Limited |
Systems and methods for dry cleaning process chambers
|
|
US6348239B1
(en)
|
2000-04-28 |
2002-02-19 |
Simon Fraser University |
Method for depositing metal and metal oxide films and patterned films
|
|
US6179922B1
(en)
|
1998-07-10 |
2001-01-30 |
Ball Semiconductor, Inc. |
CVD photo resist deposition
|
|
ATE368756T1
(de)
|
1998-09-16 |
2007-08-15 |
Applied Materials Inc |
Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck
|
|
JP2000305273A
(ja)
|
1998-11-19 |
2000-11-02 |
Applied Materials Inc |
遠紫外線ドライフォトリソグラフィー
|
|
KR100520670B1
(ko)
|
1999-05-06 |
2005-10-10 |
주식회사 하이닉스반도체 |
포토레지스트 패턴의 형성방법
|
|
JP2000356857A
(ja)
|
1999-06-15 |
2000-12-26 |
Toshiba Electronic Engineering Corp |
パターン形成装置
|
|
US20040178076A1
(en)
|
1999-10-01 |
2004-09-16 |
Stonas Walter J. |
Method of manufacture of colloidal rod particles as nanobarcodes
|
|
US20010024769A1
(en)
|
2000-02-08 |
2001-09-27 |
Kevin Donoghue |
Method for removing photoresist and residues from semiconductor device surfaces
|
|
US6573030B1
(en)
|
2000-02-17 |
2003-06-03 |
Applied Materials, Inc. |
Method for depositing an amorphous carbon layer
|
|
US20060001064A1
(en)
|
2000-04-28 |
2006-01-05 |
Hill Ross H |
Methods for the lithographic deposition of ferroelectric materials
|
|
US20040191423A1
(en)
|
2000-04-28 |
2004-09-30 |
Ruan Hai Xiong |
Methods for the deposition of silver and silver oxide films and patterned films
|
|
JP2004510321A
(ja)
|
2000-05-18 |
2004-04-02 |
エス．シー．フルーイズ，インコーポレイテッド |
精密な表面のための超臨界流体洗浄プロセス
|
|
AU2001265390A1
(en)
|
2000-06-06 |
2001-12-17 |
Ekc Technology, Inc. |
Method of making electronic materials
|
|
KR100406174B1
(ko)
|
2000-06-15 |
2003-11-19 |
주식회사 하이닉스반도체 |
화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드
|
|
KR100620651B1
(ko)
|
2000-06-22 |
2006-09-13 |
주식회사 하이닉스반도체 |
반도체 소자의 미세패턴 제조방법
|
|
JP2002015971A
(ja)
|
2000-06-27 |
2002-01-18 |
Matsushita Electric Ind Co Ltd |
パターン形成方法及び半導体装置の製造装置
|
|
KR100398312B1
(ko)
|
2000-06-30 |
2003-09-19 |
한국과학기술원 |
유기금속을 함유하고 있는 노르보넨 단량체, 이들의고분자 중합체를 함유하는 포토레지스트, 및 그제조방법과, 포토레지스트 패턴 형성방법
|
|
US6645677B1
(en)
|
2000-09-18 |
2003-11-11 |
Micronic Laser Systems Ab |
Dual layer reticle blank and manufacturing process
|
|
JP2002100558A
(ja)
|
2000-09-26 |
2002-04-05 |
Nikon Corp |
厚膜レジスト塗布方法
|
|
JP2002118096A
(ja)
|
2000-10-06 |
2002-04-19 |
Sony Corp |
アッシング装置
|
|
US6368924B1
(en)
|
2000-10-31 |
2002-04-09 |
Motorola, Inc. |
Amorphous carbon layer for improved adhesion of photoresist and method of fabrication
|
|
EP1347468A4
(en)
|
2000-12-28 |
2005-04-20 |
Nissan Chemical Ind Ltd |
METHOD FOR MODELING THE CONTOURS OF AN ELECTRO-CONDUCTIVE TIN OXIDE LAYER
|
|
US6797439B1
(en)
|
2001-03-30 |
2004-09-28 |
Schott Lithotec Ag |
Photomask with back-side anti-reflective layer and method of manufacture
|
|
US6686132B2
(en)
|
2001-04-20 |
2004-02-03 |
The Regents Of The University Of California |
Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake
|
|
US6933673B2
(en)
|
2001-04-27 |
2005-08-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Luminescent device and process of manufacturing the same
|
|
US6951823B2
(en)
|
2001-05-14 |
2005-10-04 |
Axcelis Technologies, Inc. |
Plasma ashing process
|
|
JP4558240B2
(ja)
|
2001-06-18 |
2010-10-06 |
株式会社アドバンテスト |
電子ビーム露光装置
|
|
TW588403B
(en)
|
2001-06-25 |
2004-05-21 |
Tokyo Electron Ltd |
Substrate treating device and substrate treating method
|
|
US6926957B2
(en)
|
2001-06-29 |
2005-08-09 |
3M Innovative Properties Company |
Water-based ink-receptive coating
|
|
US6448097B1
(en)
|
2001-07-23 |
2002-09-10 |
Advanced Micro Devices Inc. |
Measure fluorescence from chemical released during trim etch
|
|
DE10138105A1
(de)
|
2001-08-03 |
2003-02-27 |
Infineon Technologies Ag |
Fotolack und Verfahren zum Strukturieren eines solchen Fotolacks
|
|
JP2003213001A
(ja)
|
2001-11-13 |
2003-07-30 |
Sekisui Chem Co Ltd |
光反応性組成物
|
|
US7067235B2
(en)
|
2002-01-15 |
2006-06-27 |
Ming Huan Tsai |
Bi-layer photoresist dry development and reactive ion etch method
|
|
JP2003280155A
(ja)
|
2002-03-22 |
2003-10-02 |
Fuji Photo Film Co Ltd |
自動現像装置
|
|
US6843858B2
(en)
|
2002-04-02 |
2005-01-18 |
Applied Materials, Inc. |
Method of cleaning a semiconductor processing chamber
|
|
EP2317383A3
(en)
|
2002-04-11 |
2011-12-28 |
HOYA Corporation |
Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
|
|
JP3806702B2
(ja)
|
2002-04-11 |
2006-08-09 |
Ｈｏｙａ株式会社 |
反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
|
|
US7169440B2
(en)
|
2002-04-16 |
2007-01-30 |
Tokyo Electron Limited |
Method for removing photoresist and etch residues
|
|
DE10219173A1
(de)
|
2002-04-30 |
2003-11-20 |
Philips Intellectual Property |
Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung
|
|
US6841943B2
(en)
|
2002-06-27 |
2005-01-11 |
Lam Research Corp. |
Plasma processor with electrode simultaneously responsive to plural frequencies
|
|
US20050142885A1
(en)
|
2002-08-30 |
2005-06-30 |
Tokyo Electron Limited |
Method of etching and etching apparatus
|
|
AU2003290531A1
(en)
|
2002-10-21 |
2004-05-13 |
Nanoink, Inc. |
Nanometer-scale engineered structures, methods and apparatus for fabrication thereof, and applications to mask repair, enhancement, and fabrication
|
|
US6624127B1
(en)
|
2002-11-15 |
2003-09-23 |
Intel Corporation |
Highly polar cleans for removal of residues from semiconductor structures
|
|
JP4153783B2
(ja)
|
2002-12-09 |
2008-09-24 |
株式会社東芝 |
Ｘ線平面検出器
|
|
JP4325301B2
(ja)
|
2003-01-31 |
2009-09-02 |
東京エレクトロン株式会社 |
載置台、処理装置及び処理方法
|
|
JP2004259786A
(ja)
|
2003-02-24 |
2004-09-16 |
Canon Inc |
露光装置
|
|
US7029832B2
(en)
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
|
US6867086B1
(en)
|
2003-03-13 |
2005-03-15 |
Novellus Systems, Inc. |
Multi-step deposition and etch back gap fill process
|
|
KR100989107B1
(ko)
|
2003-03-31 |
2010-10-25 |
인터내셔널 비지니스 머신즈 코포레이션 |
다층 포토레지스트 건식 현상을 위한 방법 및 장치
|
|
US20040203256A1
(en)
|
2003-04-08 |
2004-10-14 |
Seagate Technology Llc |
Irradiation-assisted immobilization and patterning of nanostructured materials on substrates for device fabrication
|
|
CN1856742B
(zh)
|
2003-09-24 |
2010-11-24 |
日立化成工业株式会社 |
感光性元件、光阻图型的形成方法及印刷电路板制造方法
|
|
US7307695B2
(en)
|
2003-10-10 |
2007-12-11 |
Asml Netherlands B.V. |
Method and device for alignment of a substrate
|
|
GB0323805D0
(en)
|
2003-10-10 |
2003-11-12 |
Univ Southampton |
Synthesis of germanium sulphide and related compounds
|
|
US7126128B2
(en)
|
2004-02-13 |
2006-10-24 |
Kabushiki Kaisha Toshiba |
Flat panel x-ray detector
|
|
JP4459666B2
(ja)
|
2004-03-12 |
2010-04-28 |
株式会社半導体エネルギー研究所 |
除去装置
|
|
CN102610481B
(zh)
|
2004-09-01 |
2016-04-13 |
朗姆研究公司 |
用于增加光阻移除率之装置及等离子体灰化方法
|
|
US20060068173A1
(en)
|
2004-09-30 |
2006-03-30 |
Ebara Corporation |
Methods for forming and patterning of metallic films
|
|
JP2006253282A
(ja)
|
2005-03-09 |
2006-09-21 |
Ebara Corp |
金属膜のパターン形成方法
|
|
US7112489B1
(en)
|
2004-12-03 |
2006-09-26 |
Advanced Micro Devices, Inc. |
Negative resist or dry develop process for forming middle of line implant layer
|
|
US7885387B2
(en)
|
2004-12-17 |
2011-02-08 |
Osaka University |
Extreme ultraviolet light and X-ray source target and manufacturing method thereof
|
|
KR100601979B1
(ko)
|
2004-12-30 |
2006-07-18 |
삼성전자주식회사 |
반도체 웨이퍼의 베이킹 장치
|
|
KR100607201B1
(ko)
|
2005-01-04 |
2006-08-01 |
삼성전자주식회사 |
극자외선 리소그래피 공정에서 웨이퍼 상의 임계 치수편차를 보정하는 방법
|
|
US7381633B2
(en)
|
2005-01-27 |
2008-06-03 |
Hewlett-Packard Development Company, L.P. |
Method of making a patterned metal oxide film
|
|
US7365026B2
(en)
|
2005-02-01 |
2008-04-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
CxHy sacrificial layer for cu/low-k interconnects
|
|
US7868304B2
(en)
|
2005-02-07 |
2011-01-11 |
Asml Netherlands B.V. |
Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
|
|
TWI378325B
(en)
|
2005-03-30 |
2012-12-01 |
Sumitomo Chemical Co |
Salt suitable for an acid generator and a chemically amplified resist composition containing the same
|
|
US7642205B2
(en)
|
2005-04-08 |
2010-01-05 |
Mattson Technology, Inc. |
Rapid thermal processing using energy transfer layers
|
|
US7608367B1
(en)
|
2005-04-22 |
2009-10-27 |
Sandia Corporation |
Vitreous carbon mask substrate for X-ray lithography
|
|
KR100575847B1
(ko)
|
2005-04-29 |
2006-05-03 |
이앙구 |
반도체 및 평판디스플레이 설비의 부산물 포집방법
|
|
JP2006310681A
(ja)
|
2005-05-02 |
2006-11-09 |
Dainippon Screen Mfg Co Ltd |
基板処理方法および装置
|
|
TWI338171B
(en)
|
2005-05-02 |
2011-03-01 |
Au Optronics Corp |
Display device and wiring structure and method for forming the same
|
|
KR100705416B1
(ko)
|
2005-06-15 |
2007-04-10 |
삼성전자주식회사 |
포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법
|
|
US7691559B2
(en)
|
2005-06-30 |
2010-04-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion lithography edge bead removal
|
|
JP4530933B2
(ja)
|
2005-07-21 |
2010-08-25 |
大日本スクリーン製造株式会社 |
基板熱処理装置
|
|
US7482280B2
(en)
|
2005-08-15 |
2009-01-27 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method for forming a lithography pattern
|
|
JP4530980B2
(ja)
|
2005-08-26 |
2010-08-25 |
東京応化工業株式会社 |
膜形成用材料およびパターン形成方法
|
|
US7909960B2
(en)
|
2005-09-27 |
2011-03-22 |
Lam Research Corporation |
Apparatus and methods to remove films on bevel edge and backside of wafer
|
|
US7438534B2
(en)
|
2005-10-07 |
2008-10-21 |
Edwards Vacuum, Inc. |
Wide range pressure control using turbo pump
|
|
US8664124B2
(en)
|
2005-10-31 |
2014-03-04 |
Novellus Systems, Inc. |
Method for etching organic hardmasks
|
|
JP5055743B2
(ja)
|
2005-11-04 |
2012-10-24 |
セントラル硝子株式会社 |
含フッ素高分子コーティング用組成物、該コーティング用組成物を用いた含フッ素高分子膜の形成方法、ならびにフォトレジストまたはリソグラフィーパターンの形成方法。
|
|
US20070117040A1
(en)
|
2005-11-21 |
2007-05-24 |
International Business Machines Corporation |
Water castable-water strippable top coats for 193 nm immersion lithography
|
|
KR100891779B1
(ko)
|
2005-11-28 |
2009-04-07 |
허니웰 인터내셔날 인코포레이티드 |
증착 공정용의 유기금속 전구체 및 관련된 중간체, 이들의제조 방법, 및 이들의 사용 방법
|
|
JP2007207530A
(ja)
|
2006-01-31 |
2007-08-16 |
Toshiba Corp |
異方性導電膜及びこれを用いたｘ線平面検出器、赤外線平面検出器及び表示装置
|
|
US7662718B2
(en)
|
2006-03-09 |
2010-02-16 |
Micron Technology, Inc. |
Trim process for critical dimension control for integrated circuits
|
|
JP4913863B2
(ja)
|
2006-04-20 |
2012-04-11 |
デラウェア キャピタル フォーメーション インク |
過酷な環境用の被膜およびそれを用いたセンサ
|
|
KR100721206B1
(ko)
|
2006-05-04 |
2007-05-23 |
주식회사 하이닉스반도체 |
반도체소자의 스토리지노드 컨택 형성방법
|
|
US20070287073A1
(en)
|
2006-06-07 |
2007-12-13 |
Francis Goodwin |
Lithography systems and methods
|
|
US7534627B2
(en)
|
2006-08-07 |
2009-05-19 |
Sokudo Co., Ltd. |
Methods and systems for controlling critical dimensions in track lithography tools
|
|
US7718542B2
(en)
|
2006-08-25 |
2010-05-18 |
Lam Research Corporation |
Low-k damage avoidance during bevel etch processing
|
|
US7771895B2
(en)
|
2006-09-15 |
2010-08-10 |
Applied Materials, Inc. |
Method of etching extreme ultraviolet light (EUV) photomasks
|
|
US7655571B2
(en)
|
2006-10-26 |
2010-02-02 |
Applied Materials, Inc. |
Integrated method and apparatus for efficient removal of halogen residues from etched substrates
|
|
JP4428717B2
(ja)
|
2006-11-14 |
2010-03-10 |
東京エレクトロン株式会社 |
基板処理方法及び基板処理システム
|
|
JP5132920B2
(ja)
|
2006-11-22 |
2013-01-30 |
東京エレクトロン株式会社 |
塗布・現像装置および基板搬送方法、ならびにコンピュータプログラム
|
|
WO2008088076A1
(ja)
|
2007-01-17 |
2008-07-24 |
Sony Corporation |
現像液、および微細加工体の製造方法
|
|
US7615332B2
(en)
|
2007-02-06 |
2009-11-10 |
Canon Kabushiki Kaisha |
Photosensitive compound, photosensitive composition, resist pattern forming method, and device production process
|
|
US8083862B2
(en)
|
2007-03-09 |
2011-12-27 |
Tokyo Electron Limited |
Method and system for monitoring contamination on a substrate
|
|
JP5200276B2
(ja)
|
2007-03-30 |
2013-06-05 |
東京エレクトロン株式会社 |
インラインリソグラフィ及びエッチングシステム
|
|
KR101392291B1
(ko)
|
2007-04-13 |
2014-05-07 |
주식회사 동진쎄미켐 |
포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
|
|
US8105660B2
(en)
|
2007-06-28 |
2012-01-31 |
Andrew W Tudhope |
Method for producing diamond-like carbon coatings using PECVD and diamondoid precursors on internal surfaces of a hollow component
|
|
TW200921297A
(en)
|
2007-09-25 |
2009-05-16 |
Renesas Tech Corp |
Method and apparatus for manufacturing semiconductor device, and resist material
|
|
EP2203943A4
(en)
|
2007-10-12 |
2015-10-14 |
Omnipv Inc |
SOLAR MODULES WITH INCREASED EFFICIENCIES THROUGH THE USE OF SPECTRAL CONCENTRATORS
|
|
US7976631B2
(en)
|
2007-10-16 |
2011-07-12 |
Applied Materials, Inc. |
Multi-gas straight channel showerhead
|
|
KR100921932B1
(ko)
|
2007-10-25 |
2009-10-15 |
포항공과대학교 산학협력단 |
다원자분자를 이용한 패터닝방법
|
|
SG153748A1
(en)
|
2007-12-17 |
2009-07-29 |
Asml Holding Nv |
Lithographic method and apparatus
|
|
US20100260994A1
(en)
|
2007-12-20 |
2010-10-14 |
Roland Groenen |
substrate coated with amorphous hydrogenated carbon
|
|
US8236476B2
(en)
|
2008-01-08 |
2012-08-07 |
International Business Machines Corporation |
Multiple exposure photolithography methods and photoresist compositions
|
|
US20090197086A1
(en)
|
2008-02-04 |
2009-08-06 |
Sudha Rathi |
Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography
|
|
KR101659095B1
(ko)
|
2008-02-08 |
2016-09-22 |
램 리써치 코포레이션 |
측방향 벨로우 및 비접촉 입자 밀봉을 포함하는 조정가능한 갭이 용량적으로 커플링되는 ｒｆ 플라즈마 반응기
|
|
JP4978501B2
(ja)
|
2008-02-14 |
2012-07-18 |
日本電気株式会社 |
熱型赤外線検出器及びその製造方法
|
|
US8153348B2
(en)
|
2008-02-20 |
2012-04-10 |
Applied Materials, Inc. |
Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch
|
|
JP5017147B2
(ja)
|
2008-03-06 |
2012-09-05 |
東京エレクトロン株式会社 |
基板の処理方法、プログラム及びコンピュータ記憶媒体及び基板処理システム
|
|
US7985513B2
(en)
|
2008-03-18 |
2011-07-26 |
Advanced Micro Devices, Inc. |
Fluorine-passivated reticles for use in lithography and methods for fabricating the same
|
|
US7967995B2
(en)
|
2008-03-31 |
2011-06-28 |
Tokyo Electron Limited |
Multi-layer/multi-input/multi-output (MLMIMO) models and method for using
|
|
US20090286402A1
(en)
|
2008-05-13 |
2009-11-19 |
Applied Materials, Inc |
Method for critical dimension shrink using conformal pecvd films
|
|
US20090286397A1
(en)
|
2008-05-15 |
2009-11-19 |
Lam Research Corporation |
Selective inductive double patterning
|
|
JP2009294439A
(ja)
|
2008-06-05 |
2009-12-17 |
Toshiba Corp |
レジストパターン形成方法
|
|
JP5171422B2
(ja)
|
2008-06-19 |
2013-03-27 |
ルネサスエレクトロニクス株式会社 |
感光性組成物、これを用いたパターン形成方法、半導体素子の製造方法
|
|
US20090321707A1
(en)
|
2008-06-25 |
2009-12-31 |
Matthew Metz |
Intersubstrate-dielectric nanolaminate layer for improved temperature stability of gate dielectric films
|
|
US20090325387A1
(en)
|
2008-06-26 |
2009-12-31 |
Applied Materials, Inc. |
Methods and apparatus for in-situ chamber dry clean during photomask plasma etching
|
|
JP5391594B2
(ja)
|
2008-07-02 |
2014-01-15 |
富士通セミコンダクター株式会社 |
半導体装置の製造方法
|
|
JP4966922B2
(ja)
|
2008-07-07 |
2012-07-04 |
東京エレクトロン株式会社 |
レジスト処理装置、レジスト塗布現像装置、およびレジスト処理方法
|
|
KR20110050427A
(ko)
|
2008-07-14 |
2011-05-13 |
아사히 가라스 가부시키가이샤 |
Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 ｅｕｖ 리소그래피용 반사형 마스크
|
|
WO2010011974A1
(en)
|
2008-07-24 |
2010-01-28 |
Kovio, Inc. |
Aluminum inks and methods of making the same, methods for depositing aluminum inks, and films formed by printing and/or depositing an aluminum ink
|
|
US8435723B2
(en)
|
2008-09-11 |
2013-05-07 |
Nikon Corporation |
Pattern forming method and device production method
|
|
CN103123443B
(zh)
|
2008-10-14 |
2014-11-26 |
旭化成电子材料株式会社 |
热反应型抗蚀剂材料、使用它的热光刻用层压体以及使用它们的模具的制造方法
|
|
US8105954B2
(en)
|
2008-10-20 |
2012-01-31 |
aiwan Semiconductor Manufacturing Company, Ltd. |
System and method of vapor deposition
|
|
JP5225815B2
(ja)
|
2008-11-19 |
2013-07-03 |
東京エレクトロン株式会社 |
インターフェイス装置、基板を搬送する方法及びコンピュータ可読記憶媒体
|
|
US7977235B2
(en)
|
2009-02-02 |
2011-07-12 |
Tokyo Electron Limited |
Method for manufacturing a semiconductor device with metal-containing cap layers
|
|
JP4880004B2
(ja)
|
2009-02-06 |
2012-02-22 |
東京エレクトロン株式会社 |
基板処理システム
|
|
US20100216310A1
(en)
|
2009-02-20 |
2010-08-26 |
Tokyo Electron Limited |
Process for etching anti-reflective coating to improve roughness, selectivity and CD shrink
|
|
SG173052A1
(en)
|
2009-03-03 |
2011-08-29 |
Soitec Silicon On Insulator |
Gas injectors for cvd systems with the same
|
|
JP2010239087A
(ja)
|
2009-03-31 |
2010-10-21 |
Tokyo Electron Ltd |
基板支持装置及び基板支持方法
|
|
JP5193121B2
(ja)
|
2009-04-17 |
2013-05-08 |
東京エレクトロン株式会社 |
レジスト塗布現像方法
|
|
US8114306B2
(en)
|
2009-05-22 |
2012-02-14 |
International Business Machines Corporation |
Method of forming sub-lithographic features using directed self-assembly of polymers
|
|
US20100304027A1
(en)
|
2009-05-27 |
2010-12-02 |
Applied Materials, Inc. |
Substrate processing system and methods thereof
|
|
US20100310790A1
(en)
|
2009-06-09 |
2010-12-09 |
Nanya Technology Corporation |
Method of forming carbon-containing layer
|
|
TWI474378B
(zh)
|
2009-06-26 |
2015-02-21 |
羅門哈斯電子材料有限公司 |
形成電子裝置的方法
|
|
KR101308572B1
(ko)
|
2009-07-21 |
2013-09-13 |
주식회사 유엠티 |
실리콘을 함유하는 박막 증착을 위한 실리콘 전구체 제조 방법
|
|
US20120183689A1
(en)
|
2009-09-29 |
2012-07-19 |
Tokyo Electron Limited |
Ni film forming method
|
|
EP2502268B1
(en)
|
2009-11-17 |
2018-10-24 |
Evatec AG |
Apparatus and method for processing a substrate
|
|
US8247332B2
(en)
|
2009-12-04 |
2012-08-21 |
Novellus Systems, Inc. |
Hardmask materials
|
|
JP5682573B2
(ja)
|
2009-12-28 |
2015-03-11 |
旭硝子株式会社 |
感光性組成物、隔壁、カラーフィルタおよび有機ｅｌ素子
|
|
US20110177694A1
(en)
|
2010-01-15 |
2011-07-21 |
Tokyo Electron Limited |
Switchable Neutral Beam Source
|
|
JP5003773B2
(ja)
|
2010-02-15 |
2012-08-15 |
東京エレクトロン株式会社 |
現像装置、現像方法及び記憶媒体
|
|
JP5544914B2
(ja)
|
2010-02-15 |
2014-07-09 |
大日本印刷株式会社 |
反射型マスクの製造方法
|
|
US8178439B2
(en)
|
2010-03-30 |
2012-05-15 |
Tokyo Electron Limited |
Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices
|
|
JP4977230B2
(ja)
|
2010-03-31 |
2012-07-18 |
積水化学工業株式会社 |
エッチング方法及び装置
|
|
US9257274B2
(en)
|
2010-04-15 |
2016-02-09 |
Lam Research Corporation |
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
|
|
US8475674B2
(en)
|
2010-04-30 |
2013-07-02 |
Applied Materials, Inc. |
High-temperature selective dry etch having reduced post-etch solid residue
|
|
WO2011137059A2
(en)
|
2010-04-30 |
2011-11-03 |
Applied Materials, Inc. |
Amorphous carbon deposition method for improved stack defectivity
|
|
JP5392190B2
(ja)
|
2010-06-01 |
2014-01-22 |
東京エレクトロン株式会社 |
基板処理システム及び基板処理方法
|
|
US9176377B2
(en)
|
2010-06-01 |
2015-11-03 |
Inpria Corporation |
Patterned inorganic layers, radiation based patterning compositions and corresponding methods
|
|
US8138097B1
(en)
|
2010-09-20 |
2012-03-20 |
Kabushiki Kaisha Toshiba |
Method for processing semiconductor structure and device based on the same
|
|
US8524612B2
(en)
|
2010-09-23 |
2013-09-03 |
Novellus Systems, Inc. |
Plasma-activated deposition of conformal films
|
|
TW201224190A
(en)
|
2010-10-06 |
2012-06-16 |
Applied Materials Inc |
Atomic layer deposition of photoresist materials and hard mask precursors
|
|
MX350993B
(es)
|
2010-10-28 |
2017-09-27 |
Procter & Gamble |
Composiciones para el cuidado personal que comprenden una piritiona y un quelante de hierro.
|
|
US8470711B2
(en)
|
2010-11-23 |
2013-06-25 |
International Business Machines Corporation |
Tone inversion with partial underlayer etch for semiconductor device formation
|
|
US8415587B2
(en)
|
2010-12-03 |
2013-04-09 |
Uvtech Systems, Inc. |
Fiber-optic beam delivery system for wafer edge processing
|
|
US9719169B2
(en)
|
2010-12-20 |
2017-08-01 |
Novellus Systems, Inc. |
System and apparatus for flowable deposition in semiconductor fabrication
|
|
EP2472325A1
(en)
|
2010-12-31 |
2012-07-04 |
Rohm and Haas Electronic Materials LLC |
Polymers, photoresist compositions and methods of forming photolithographic patterns
|
|
JP5572560B2
(ja)
|
2011-01-05 |
2014-08-13 |
東京エレクトロン株式会社 |
成膜装置、基板処理システム、基板処理方法及び半導体装置の製造方法
|
|
US8836082B2
(en)
|
2011-01-31 |
2014-09-16 |
Brewer Science Inc. |
Reversal lithography approach by selective deposition of nanoparticles
|
|
US8778816B2
(en)
|
2011-02-04 |
2014-07-15 |
Applied Materials, Inc. |
In situ vapor phase surface activation of SiO2
|
|
JP5708522B2
(ja)
|
2011-02-15 |
2015-04-30 |
信越化学工業株式会社 |
レジスト材料及びこれを用いたパターン形成方法
|
|
JP5842338B2
(ja)
|
2011-02-17 |
2016-01-13 |
セイコーエプソン株式会社 |
波長可変干渉フィルター、光モジュール、および電子機器
|
|
WO2012118847A2
(en)
|
2011-02-28 |
2012-09-07 |
Inpria Corportion |
Solution processible hardmarks for high resolusion lithography
|
|
US8501499B2
(en)
|
2011-03-28 |
2013-08-06 |
Tokyo Electron Limited |
Adaptive recipe selector
|
|
US8532796B2
(en)
|
2011-03-31 |
2013-09-10 |
Tokyo Electron Limited |
Contact processing using multi-input/multi-output (MIMO) models
|
|
FR2975823B1
(fr)
|
2011-05-27 |
2014-11-21 |
Commissariat Energie Atomique |
Procede de realisation d'un motif a la surface d'un bloc d'un substrat utilisant des copolymeres a bloc
|
|
KR101295791B1
(ko)
|
2011-05-31 |
2013-08-09 |
세메스 주식회사 |
기판 처리 설비 및 기판 처리 방법
|
|
WO2012173699A1
(en)
|
2011-06-15 |
2012-12-20 |
Applied Materials, Inc. |
Methods and apparatus for performing multiple photoresist layer development and etching processes
|
|
EP2729844B1
(en)
|
2011-07-08 |
2021-07-28 |
ASML Netherlands B.V. |
Lithographic patterning process and resists to use therein
|
|
US8741775B2
(en)
|
2011-07-20 |
2014-06-03 |
Applied Materials, Inc. |
Method of patterning a low-K dielectric film
|
|
CN102610516B
(zh)
|
2011-07-22 |
2015-01-21 |
上海华力微电子有限公司 |
一种提高光刻胶与金属/金属化合物表面之间粘附力的方法
|
|
US9666414B2
(en)
|
2011-10-27 |
2017-05-30 |
Applied Materials, Inc. |
Process chamber for etching low k and other dielectric films
|
|
EP2587518B1
(en)
|
2011-10-31 |
2018-12-19 |
IHI Hauzer Techno Coating B.V. |
Apparatus and Method for depositing Hydrogen-free ta C Layers on Workpieces and Workpiece
|
|
US8808561B2
(en)
|
2011-11-15 |
2014-08-19 |
Lam Research Coporation |
Inert-dominant pulsing in plasma processing systems
|
|
EP2783389B1
(en)
|
2011-11-21 |
2021-03-10 |
Brewer Science, Inc. |
Structure comprising assist layers for euv lithography and method for forming it
|
|
US8809994B2
(en)
|
2011-12-09 |
2014-08-19 |
International Business Machines Corporation |
Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate
|
|
US20130177847A1
(en)
|
2011-12-12 |
2013-07-11 |
Applied Materials, Inc. |
Photoresist for improved lithographic control
|
|
US8691476B2
(en)
|
2011-12-16 |
2014-04-08 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
EUV mask and method for forming the same
|
|
EP2608247A1
(en)
|
2011-12-21 |
2013-06-26 |
Imec |
EUV photoresist encapsulation
|
|
JP5705103B2
(ja)
|
2011-12-26 |
2015-04-22 |
株式会社東芝 |
パターン形成方法
|
|
JP5919896B2
(ja)
|
2011-12-28 |
2016-05-18 |
住友ベークライト株式会社 |
硬化膜の処理方法および半導体装置の製造方法
|
|
US8883028B2
(en)
|
2011-12-28 |
2014-11-11 |
Lam Research Corporation |
Mixed mode pulsing etching in plasma processing systems
|
|
KR101920711B1
(ko)
|
2012-01-16 |
2018-11-22 |
삼성전자주식회사 |
박막 패터닝 방법 및 이를 이용한 반도체소자의 제조방법
|
|
SG193093A1
(en)
|
2012-02-13 |
2013-09-30 |
Novellus Systems Inc |
Method for etching organic hardmasks
|
|
CN103243310B
(zh)
|
2012-02-14 |
2017-04-12 |
诺发系统公司 |
在衬底表面上的等离子体激活的保形膜沉积的方法
|
|
US8703386B2
(en)
|
2012-02-27 |
2014-04-22 |
International Business Machines Corporation |
Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
|
|
US20130236681A1
(en)
|
2012-03-06 |
2013-09-12 |
Chang Min Lee |
Photocurable composition, barrier layer including the same, and encapsulated apparatus including the same
|
|
US11437269B2
(en)
|
2012-03-27 |
2022-09-06 |
Novellus Systems, Inc. |
Tungsten feature fill with nucleation inhibition
|
|
US9627217B2
(en)
|
2012-04-23 |
2017-04-18 |
Nissan Chemical Industries, Ltd. |
Silicon-containing EUV resist underlayer film-forming composition including additive
|
|
CN104284776B
(zh)
|
2012-05-14 |
2016-01-06 |
柯尼卡美能达株式会社 |
气体阻隔性膜、气体阻隔性膜的制造方法及电子设备
|
|
SG195494A1
(en)
|
2012-05-18 |
2013-12-30 |
Novellus Systems Inc |
Carbon deposition-etch-ash gap fill process
|
|
US8765359B2
(en)
*
|
2012-06-05 |
2014-07-01 |
Complete Genomics, Inc. |
Method of fabricating patterned functional substrates
|
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
|
SG2013083241A
(en)
|
2012-11-08 |
2014-06-27 |
Novellus Systems Inc |
Conformal film deposition for gapfill
|
|
US8969997B2
(en)
|
2012-11-14 |
2015-03-03 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Isolation structures and methods of forming the same
|
|
US8927989B2
(en)
|
2012-11-28 |
2015-01-06 |
International Business Machines Corporation |
Voltage contrast inspection of deep trench isolation
|
|
US9362133B2
(en)
|
2012-12-14 |
2016-06-07 |
Lam Research Corporation |
Method for forming a mask by etching conformal film on patterned ashable hardmask
|
|
JP5913077B2
(ja)
|
2012-12-18 |
2016-04-27 |
信越化学工業株式会社 |
ポジ型レジスト材料及びこれを用いたパターン形成方法
|
|
US9337068B2
(en)
|
2012-12-18 |
2016-05-10 |
Lam Research Corporation |
Oxygen-containing ceramic hard masks and associated wet-cleans
|
|
CN103943493A
(zh)
|
2013-01-18 |
2014-07-23 |
北大方正集团有限公司 |
一种半导体加工方法以及一种半导体结构
|
|
JP6134522B2
(ja)
|
2013-01-30 |
2017-05-24 |
株式会社ニューフレアテクノロジー |
気相成長装置および気相成長方法
|
|
JP6068171B2
(ja)
|
2013-02-04 |
2017-01-25 |
株式会社日立ハイテクノロジーズ |
試料の処理方法および試料処理装置
|
|
US9304396B2
(en)
|
2013-02-25 |
2016-04-05 |
Lam Research Corporation |
PECVD films for EUV lithography
|
|
JP5871844B2
(ja)
|
2013-03-06 |
2016-03-01 |
東京エレクトロン株式会社 |
基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
|
|
CN105190847A
(zh)
|
2013-03-08 |
2015-12-23 |
应用材料公司 |
具有适于保护抵抗氟等离子体的保护涂层的腔室部件
|
|
US9607904B2
(en)
|
2013-03-11 |
2017-03-28 |
Intermolecular, Inc. |
Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices
|
|
US9632411B2
(en)
|
2013-03-14 |
2017-04-25 |
Applied Materials, Inc. |
Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
|
|
US9223220B2
(en)
|
2013-03-12 |
2015-12-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photo resist baking in lithography process
|
|
US9411237B2
(en)
|
2013-03-14 |
2016-08-09 |
Applied Materials, Inc. |
Resist hardening and development processes for semiconductor device manufacturing
|
|
CN105164585B
(zh)
|
2013-04-18 |
2020-02-21 |
太阳油墨制造株式会社 |
层叠结构体、柔性印刷电路板及其制造方法
|
|
US20140311581A1
(en)
|
2013-04-19 |
2014-10-23 |
Applied Materials, Inc. |
Pressure controller configuration for semiconductor processing applications
|
|
US10074544B2
(en)
|
2013-04-23 |
2018-09-11 |
Massachusetts Institute Of Technology |
Developer free positive tone lithography by thermal direct write
|
|
US10197912B2
(en)
|
2013-05-24 |
2019-02-05 |
Boe Technology Group Co., Ltd. |
Method for manufacturing color photoresist pattern in color filter
|
|
US8993054B2
(en)
|
2013-07-12 |
2015-03-31 |
Asm Ip Holding B.V. |
Method and system to reduce outgassing in a reaction chamber
|
|
US20150020848A1
(en)
|
2013-07-19 |
2015-01-22 |
Lam Research Corporation |
Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning
|
|
US9310684B2
(en)
|
2013-08-22 |
2016-04-12 |
Inpria Corporation |
Organometallic solution based high resolution patterning compositions
|
|
US9372402B2
(en)
|
2013-09-13 |
2016-06-21 |
The Research Foundation For The State University Of New York |
Molecular organometallic resists for EUV
|
|
US9405204B2
(en)
|
2013-09-18 |
2016-08-02 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method of overlay in extreme ultra-violet (EUV) lithography
|
|
US9576810B2
(en)
|
2013-10-03 |
2017-02-21 |
Applied Materials, Inc. |
Process for etching metal using a combination of plasma and solid state sources
|
|
JP2016539361A
(ja)
|
2013-11-08 |
2016-12-15 |
東京エレクトロン株式会社 |
Ｅｕｖリソグラフィを加速するためのポスト処理メソッドを使用する方法
|
|
JP6081904B2
(ja)
|
2013-11-29 |
2017-02-15 |
東京エレクトロン株式会社 |
現像処理装置、現像処理方法、プログラム及びコンピュータ記憶媒体
|
|
JP5917477B2
(ja)
|
2013-11-29 |
2016-05-18 |
株式会社日立国際電気 |
基板処理装置、半導体装置の製造方法及びプログラム
|
|
US9305839B2
(en)
|
2013-12-19 |
2016-04-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Curing photo resist for improving etching selectivity
|
|
US9324606B2
(en)
|
2014-01-09 |
2016-04-26 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Self-aligned repairing process for barrier layer
|
|
JP6692754B2
(ja)
|
2014-01-13 |
2020-05-13 |
アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ |
空間的原子層堆積法による、自己整合ダブルパターニング
|
|
TWI639179B
(zh)
|
2014-01-31 |
2018-10-21 |
美商蘭姆研究公司 |
真空整合硬遮罩製程及設備
|
|
US9895715B2
(en)
|
2014-02-04 |
2018-02-20 |
Asm Ip Holding B.V. |
Selective deposition of metals, metal oxides, and dielectrics
|
|
TWI575566B
(zh)
|
2014-02-24 |
2017-03-21 |
東京威力科創股份有限公司 |
與光敏化化學放大光阻化學品及程序一起使用的方法及技術
|
|
KR102233577B1
(ko)
|
2014-02-25 |
2021-03-30 |
삼성전자주식회사 |
반도체 소자의 패턴 형성 방법
|
|
JP6519753B2
(ja)
|
2014-02-26 |
2019-05-29 |
日産化学株式会社 |
レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法
|
|
JP2015185594A
(ja)
|
2014-03-20 |
2015-10-22 |
株式会社日立ハイテクノロジーズ |
エッチング装置
|
|
US10685846B2
(en)
|
2014-05-16 |
2020-06-16 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor integrated circuit fabrication with pattern-reversing process
|
|
US9377692B2
(en)
|
2014-06-10 |
2016-06-28 |
Applied Materials, Inc. |
Electric/magnetic field guided acid diffusion
|
|
CN106662816B
(zh)
|
2014-07-08 |
2020-10-23 |
东京毅力科创株式会社 |
负性显影剂相容性的光致抗蚀剂组合物及使用方法
|
|
GB201412201D0
(en)
|
2014-07-09 |
2014-08-20 |
Isis Innovation |
Two-step deposition process
|
|
US9451614B2
(en)
|
2014-07-21 |
2016-09-20 |
Qualcomm Incorporated |
System and methods for improving performance of a multi-SIM wireless device operating in single-SIM or multi-SIM standby mode
|
|
KR102330792B1
(ko)
|
2014-07-25 |
2021-11-25 |
인텔 코포레이션 |
텅스텐 합금을 갖는 반도체 디바이스 및 컴퓨팅 디바이스
|
|
US20160041471A1
(en)
|
2014-08-07 |
2016-02-11 |
International Business Machines Corporation |
Acidified conductive water for developer residue removal
|
|
KR101994793B1
(ko)
|
2014-09-02 |
2019-07-01 |
후지필름 가부시키가이샤 |
패턴 형성 방법, 전자 디바이스의 제조 방법, 레지스트 조성물, 및 레지스트막
|
|
JP6572899B2
(ja)
|
2014-09-17 |
2019-09-11 |
Jsr株式会社 |
パターン形成方法
|
|
US20160086864A1
(en)
|
2014-09-24 |
2016-03-24 |
Lam Research Corporation |
Movable gas nozzle in drying module
|
|
US9368364B2
(en)
|
2014-09-24 |
2016-06-14 |
Applied Materials, Inc. |
Silicon etch process with tunable selectivity to SiO2 and other materials
|
|
BR112017003432A2
(pt)
|
2014-09-25 |
2017-11-28 |
Procter & Gamble |
composições detergentes para lavagem de roupas e de limpeza que compreendem polímeros contendo grupo sulfonato
|
|
JP6314779B2
(ja)
|
2014-10-01 |
2018-04-25 |
東京エレクトロン株式会社 |
液処理方法、記憶媒体及び液処理装置
|
|
KR102952227B1
(ko)
|
2014-10-23 |
2026-04-13 |
인프리아 코포레이션 |
유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
|
|
JP6317232B2
(ja)
|
2014-10-29 |
2018-04-25 |
東京エレクトロン株式会社 |
選択成長方法および基板処理装置
|
|
US9609730B2
(en)
|
2014-11-12 |
2017-03-28 |
Lam Research Corporation |
Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas
|
|
US9576811B2
(en)
|
2015-01-12 |
2017-02-21 |
Lam Research Corporation |
Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
|
|
US10145008B2
(en)
|
2015-02-06 |
2018-12-04 |
Versum Materials Us, Llc |
Compositions and methods using same for carbon doped silicon containing films
|
|
US9551924B2
(en)
|
2015-02-12 |
2017-01-24 |
International Business Machines Corporation |
Structure and method for fixing phase effects on EUV mask
|
|
US20180047898A1
(en)
|
2015-03-09 |
2018-02-15 |
Versum Materials Us, Llc |
Process for depositing porous organosilicate glass films for use as resistive random access memory
|
|
JP6404757B2
(ja)
|
2015-03-27 |
2018-10-17 |
信越化学工業株式会社 |
レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
|
|
WO2016161287A1
(en)
|
2015-04-02 |
2016-10-06 |
Tokyo Electron Limited |
Trench and hole patterning with euv resists using dual frequency capacitively coupled plasma (ccp)
|
|
US20160314964A1
(en)
|
2015-04-21 |
2016-10-27 |
Lam Research Corporation |
Gap fill using carbon-based films
|
|
US9870899B2
(en)
|
2015-04-24 |
2018-01-16 |
Lam Research Corporation |
Cobalt etch back
|
|
DE102015208492A1
(de)
|
2015-05-07 |
2016-11-10 |
Reiner Diefenbach |
Endlager für die Lagerung von radioaktivem Material, sowie Verfahren zu seiner Herstellung
|
|
JP6494417B2
(ja)
|
2015-05-20 |
2019-04-03 |
株式会社ディスコ |
プラズマエッチング装置
|
|
US9829790B2
(en)
|
2015-06-08 |
2017-11-28 |
Applied Materials, Inc. |
Immersion field guided exposure and post-exposure bake process
|
|
US9659771B2
(en)
|
2015-06-11 |
2017-05-23 |
Applied Materials, Inc. |
Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning
|
|
US9922839B2
(en)
|
2015-06-23 |
2018-03-20 |
Lam Research Corporation |
Low roughness EUV lithography
|
|
WO2016208300A1
(ja)
|
2015-06-24 |
2016-12-29 |
富士フイルム株式会社 |
パターン形成方法、積層体、及び、有機溶剤現像用レジスト組成物
|
|
KR102377376B1
(ko)
|
2015-06-26 |
2022-03-21 |
어플라이드 머티어리얼스, 인코포레이티드 |
실리콘 산화물 막들의 선택적 증착
|
|
WO2017002497A1
(ja)
|
2015-06-30 |
2017-01-05 |
富士フイルム株式会社 |
パターン形成方法、及び電子デバイスの製造方法
|
|
KR102411946B1
(ko)
|
2015-07-08 |
2022-06-22 |
삼성전자주식회사 |
초임계 유체를 이용한 기판 처리장치와 이를 포함하는 기판 처리 시스템 및 이를 이용한 기판처리 방법
|
|
JP6817692B2
(ja)
|
2015-08-27 |
2021-01-20 |
東京エレクトロン株式会社 |
プラズマ処理方法
|
|
US9984858B2
(en)
|
2015-09-04 |
2018-05-29 |
Lam Research Corporation |
ALE smoothness: in and outside semiconductor industry
|
|
US10468249B2
(en)
|
2015-09-28 |
2019-11-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Patterning process of a semiconductor structure with a middle layer
|
|
KR102508142B1
(ko)
|
2015-10-13 |
2023-03-08 |
인프리아 코포레이션 |
유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
|
|
US10388546B2
(en)
|
2015-11-16 |
2019-08-20 |
Lam Research Corporation |
Apparatus for UV flowable dielectric
|
|
US9996004B2
(en)
|
2015-11-20 |
2018-06-12 |
Lam Research Corporation |
EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
|
|
JP6552070B2
(ja)
|
2015-11-25 |
2019-07-31 |
国立大学法人大阪大学 |
レジストパターン形成方法およびレジスト材料
|
|
JP6603115B2
(ja)
|
2015-11-27 |
2019-11-06 |
信越化学工業株式会社 |
ケイ素含有縮合物、ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
|
|
US10503070B2
(en)
|
2015-12-10 |
2019-12-10 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Photosensitive material and method of lithography
|
|
JP6517678B2
(ja)
|
2015-12-11 |
2019-05-22 |
株式会社Ｓｃｒｅｅｎホールディングス |
電子デバイスの製造方法
|
|
CN108700815B
(zh)
|
2015-12-23 |
2024-03-19 |
Asml荷兰有限公司 |
用于去除衬底上的光敏材料的方法
|
|
US9633838B2
(en)
|
2015-12-28 |
2017-04-25 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Vapor deposition of silicon-containing films using penta-substituted disilanes
|
|
US9953843B2
(en)
|
2016-02-05 |
2018-04-24 |
Lam Research Corporation |
Chamber for patterning non-volatile metals
|
|
JP6742748B2
(ja)
|
2016-02-17 |
2020-08-19 |
株式会社Ｓｃｒｅｅｎホールディングス |
現像ユニット、基板処理装置、現像方法および基板処理方法
|
|
KR102439450B1
(ko)
|
2016-02-23 |
2022-09-01 |
에이에스엠엘 네델란즈 비.브이. |
패터닝 프로세스 제어 방법, 리소그래피 장치, 계측 장치 리소그래피 셀 및 연관된 컴퓨터 프로그램
|
|
US10018920B2
(en)
|
2016-03-04 |
2018-07-10 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Lithography patterning with a gas phase resist
|
|
GB201603988D0
(en)
|
2016-03-08 |
2016-04-20 |
Semblant Ltd |
Plasma deposition method
|
|
KR102394042B1
(ko)
|
2016-03-11 |
2022-05-03 |
인프리아 코포레이션 |
사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법
|
|
US11315798B2
(en)
|
2016-04-08 |
2022-04-26 |
Intel Corporation |
Two-stage bake photoresist with releasable quencher
|
|
KR102755287B1
(ko)
|
2016-05-19 |
2025-01-21 |
에이에스엠엘 네델란즈 비.브이. |
레지스트 조성물
|
|
US10304668B2
(en)
|
2016-05-24 |
2019-05-28 |
Tokyo Electron Limited |
Localized process control using a plasma system
|
|
JP2017222928A
(ja)
|
2016-05-31 |
2017-12-21 |
東京エレクトロン株式会社 |
表面処理による選択的堆積
|
|
EP3258317B1
(en)
|
2016-06-16 |
2022-01-19 |
IMEC vzw |
Method for performing extreme ultra violet (euv) lithography
|
|
US9824893B1
(en)
|
2016-06-28 |
2017-11-21 |
Lam Research Corporation |
Tin oxide thin film spacers in semiconductor device manufacturing
|
|
WO2018004551A1
(en)
|
2016-06-28 |
2018-01-04 |
Intel Corporation |
Polysilane-, polygermane-, and polystannane-based materials for euv and ebeam lithography
|
|
WO2018004646A1
(en)
*
|
2016-07-01 |
2018-01-04 |
Intel Corporation |
Metal oxide resist materials
|
|
US10866516B2
(en)
|
2016-08-05 |
2020-12-15 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Metal-compound-removing solvent and method in lithography
|
|
JP2018025686A
(ja)
|
2016-08-10 |
2018-02-15 |
株式会社リコー |
電界効果型トランジスタの製造方法、位置合わせ方法、露光装置
|
|
KR102610448B1
(ko)
|
2016-08-12 |
2023-12-07 |
인프리아 코포레이션 |
금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
|
|
US10566211B2
(en)
|
2016-08-30 |
2020-02-18 |
Lam Research Corporation |
Continuous and pulsed RF plasma for etching metals
|
|
EP3291007A1
(en)
|
2016-08-30 |
2018-03-07 |
ASML Netherlands B.V. |
Patterning stack optimization
|
|
US10074543B2
(en)
|
2016-08-31 |
2018-09-11 |
Lam Research Corporation |
High dry etch rate materials for semiconductor patterning applications
|
|
JPWO2018061670A1
(ja)
|
2016-09-29 |
2019-06-24 |
富士フイルム株式会社 |
処理液、および積層体の処理方法
|
|
EP3520117B1
(en)
|
2016-09-29 |
2023-11-08 |
The Regents of The University of California |
Separation of metal ions by liquid-liquid extraction
|
|
KR101966808B1
(ko)
|
2016-09-30 |
2019-04-08 |
세메스 주식회사 |
기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치
|
|
US10755942B2
(en)
|
2016-11-02 |
2020-08-25 |
Massachusetts Institute Of Technology |
Method of forming topcoat for patterning
|
|
US10510538B2
(en)
|
2016-11-29 |
2019-12-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Reducing EUV-induced material property changes
|
|
JP6781031B2
(ja)
|
2016-12-08 |
2020-11-04 |
東京エレクトロン株式会社 |
基板処理方法及び熱処理装置
|
|
US9929012B1
(en)
|
2016-12-14 |
2018-03-27 |
International Business Machines Corporation |
Resist having tuned interface hardmask layer for EUV exposure
|
|
US10866511B2
(en)
|
2016-12-15 |
2020-12-15 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Extreme ultraviolet photolithography method with developer composition
|
|
US10566212B2
(en)
|
2016-12-19 |
2020-02-18 |
Lam Research Corporation |
Designer atomic layer etching
|
|
KR102047538B1
(ko)
|
2017-02-03 |
2019-11-21 |
삼성에스디아이 주식회사 |
레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
|
|
KR102722138B1
(ko)
|
2017-02-13 |
2024-10-24 |
램 리써치 코포레이션 |
에어 갭들을 생성하는 방법
|
|
US10096477B2
(en)
|
2017-02-15 |
2018-10-09 |
International Business Machines Corporation |
Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography
|
|
JP2020095068A
(ja)
|
2017-03-31 |
2020-06-18 |
富士フイルム株式会社 |
パターン形成方法、電子デバイスの製造方法
|
|
WO2018189413A1
(en)
|
2017-04-10 |
2018-10-18 |
Picosun Oy |
Uniform deposition
|
|
US20180308687A1
(en)
|
2017-04-24 |
2018-10-25 |
Lam Research Corporation |
Euv photopatterning and selective deposition for negative pattern mask
|
|
JP6980406B2
(ja)
|
2017-04-25 |
2021-12-15 |
株式会社日立ハイテク |
半導体製造装置及び半導体装置の製造方法
|
|
KR102030056B1
(ko)
|
2017-05-02 |
2019-11-11 |
세메스 주식회사 |
챔버 세정 방법, 기판 처리 방법, 그리고 기판 처리 장치
|
|
US10796912B2
(en)
|
2017-05-16 |
2020-10-06 |
Lam Research Corporation |
Eliminating yield impact of stochastics in lithography
|
|
JP6852566B2
(ja)
|
2017-05-26 |
2021-03-31 |
大日本印刷株式会社 |
パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム
|
|
US10745282B2
(en)
|
2017-06-08 |
2020-08-18 |
Applied Materials, Inc. |
Diamond-like carbon film
|
|
US10950454B2
(en)
|
2017-08-04 |
2021-03-16 |
Lam Research Corporation |
Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method
|
|
JP6947914B2
(ja)
|
2017-08-18 |
2021-10-13 |
アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ |
高圧高温下のアニールチャンバ
|
|
JP6579173B2
(ja)
|
2017-09-19 |
2019-09-25 |
セイコーエプソン株式会社 |
電気光学装置、電気光学装置の駆動方法、及び、電子機器
|
|
US10763083B2
(en)
|
2017-10-06 |
2020-09-01 |
Lam Research Corporation |
High energy atomic layer etching
|
|
US20190131130A1
(en)
|
2017-10-31 |
2019-05-02 |
Lam Research Corporation |
Etching metal oxide substrates using ale and selective deposition
|
|
KR102067081B1
(ko)
|
2017-11-01 |
2020-01-16 |
삼성에스디아이 주식회사 |
레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
|
|
US11300878B2
(en)
|
2017-11-13 |
2022-04-12 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Photoresist developer and method of developing photoresist
|
|
KR102634520B1
(ko)
|
2017-11-20 |
2024-02-06 |
인프리아 코포레이션 |
유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용
|
|
US11022879B2
(en)
|
2017-11-24 |
2021-06-01 |
Asm Ip Holding B.V. |
Method of forming an enhanced unexposed photoresist layer
|
|
WO2019108376A1
(en)
|
2017-12-01 |
2019-06-06 |
Applied Materials, Inc. |
Highly etch selective amorphous carbon film
|
|
US11243465B2
(en)
|
2017-12-18 |
2022-02-08 |
Tokyo Electron Limited |
Plasma treatment method to enhance surface adhesion for lithography
|
|
US10347486B1
(en)
|
2017-12-19 |
2019-07-09 |
International Business Machines Corporation |
Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography
|
|
US10727075B2
(en)
|
2017-12-22 |
2020-07-28 |
Applied Materials, Inc. |
Uniform EUV photoresist patterning utilizing pulsed plasma process
|
|
KR102540963B1
(ko)
|
2017-12-27 |
2023-06-07 |
삼성전자주식회사 |
미세 패턴 형성 방법 및 기판 처리 장치
|
|
KR20190085654A
(ko)
|
2018-01-11 |
2019-07-19 |
삼성전자주식회사 |
반도체 소자의 제조 방법
|
|
JP7005369B2
(ja)
|
2018-02-05 |
2022-01-21 |
キオクシア株式会社 |
薬液塗布装置および半導体デバイスの製造方法
|
|
WO2019163455A1
(ja)
|
2018-02-22 |
2019-08-29 |
株式会社ダイセル |
基板親水化処理剤
|
|
WO2019190781A1
(en)
|
2018-03-30 |
2019-10-03 |
Lam Research Corporation |
Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
|
|
TWI875109B
(zh)
|
2018-04-05 |
2025-03-01 |
美商英培雅股份有限公司 |
包含錫化合物的組合物及其應用
|
|
US10787466B2
(en)
|
2018-04-11 |
2020-09-29 |
Inpria Corporation |
Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
|
|
US11673903B2
(en)
|
2018-04-11 |
2023-06-13 |
Inpria Corporation |
Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
|
|
JP7101036B2
(ja)
|
2018-04-26 |
2022-07-14 |
東京エレクトロン株式会社 |
処理液供給装置及び処理液供給方法
|
|
US20190348292A1
(en)
|
2018-05-10 |
2019-11-14 |
International Business Machines Corporation |
Transferring euv resist pattern to eliminate pattern transfer defectivity
|
|
KR20200144580A
(ko)
|
2018-05-11 |
2020-12-29 |
램 리써치 코포레이션 |
Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들
|
|
KR20200142601A
(ko)
|
2018-05-16 |
2020-12-22 |
어플라이드 머티어리얼스, 인코포레이티드 |
원자 층 자기 정렬 기판 프로세싱 및 통합 툴셋
|
|
KR102749665B1
(ko)
|
2018-05-29 |
2025-01-02 |
도쿄엘렉트론가부시키가이샤 |
기판 처리 방법, 기판 처리 장치 및 컴퓨터 판독 가능한 기록 매체
|
|
JP7333346B2
(ja)
|
2018-06-08 |
2023-08-24 |
アプライド マテリアルズ インコーポレイテッド |
プラズマ化学気相堆積チャンバ内の寄生プラズマを抑制する装置
|
|
CN112368645B
(zh)
|
2018-06-13 |
2024-07-26 |
布鲁尔科技公司 |
用于euv光刻的粘附层
|
|
US11016386B2
(en)
|
2018-06-15 |
2021-05-25 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Photoresist composition and method of forming photoresist pattern
|
|
TWI796816B
(zh)
|
2018-06-21 |
2023-03-21 |
美商英培雅股份有限公司 |
單烷基錫烷氧化物的穩定溶液及其水解與縮合產物
|
|
US11249384B2
(en)
|
2018-06-29 |
2022-02-15 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Mask for EUV lithography and method of manufacturing the same
|
|
US11437238B2
(en)
|
2018-07-09 |
2022-09-06 |
Applied Materials, Inc. |
Patterning scheme to improve EUV resist and hard mask selectivity
|
|
KR102306444B1
(ko)
|
2018-07-31 |
2021-09-28 |
삼성에스디아이 주식회사 |
반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
|
|
US11092889B2
(en)
|
2018-07-31 |
2021-08-17 |
Samsung Sdi Co., Ltd. |
Semiconductor resist composition, and method of forming patterns using the composition
|
|
FI129480B
(en)
|
2018-08-10 |
2022-03-15 |
Pibond Oy |
Silanol-containing organic-inorganic hybrid coatings for high resolution patterning
|
|
US10515812B1
(en)
|
2018-08-13 |
2019-12-24 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Methods of reducing pattern roughness in semiconductor fabrication
|
|
JP7241486B2
(ja)
|
2018-08-21 |
2023-03-17 |
東京エレクトロン株式会社 |
マスクの形成方法
|
|
TWI884927B
(zh)
|
2018-10-17 |
2025-06-01 |
美商英培雅股份有限公司 |
圖案化有機金屬光阻及圖案化的方法
|
|
JP6816083B2
(ja)
|
2018-10-22 |
2021-01-20 |
キオクシア株式会社 |
半導体装置の製造方法
|
|
US11372332B2
(en)
|
2018-10-26 |
2022-06-28 |
Tokyo Electron Limited |
Plasma treatment method to improve photo resist roughness and remove photo resist scum
|
|
JP6597872B2
(ja)
|
2018-11-13 |
2019-10-30 |
東京エレクトロン株式会社 |
基板処理方法
|
|
CN113039486B
(zh)
|
2018-11-14 |
2024-11-12 |
朗姆研究公司 |
可用于下一代光刻法中的硬掩模制作方法
|
|
US11217444B2
(en)
|
2018-11-30 |
2022-01-04 |
Asm Ip Holding B.V. |
Method for forming an ultraviolet radiation responsive metal oxide-containing film
|
|
US12025919B2
(en)
|
2018-11-30 |
2024-07-02 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method of storing photoresist coated substrates and semiconductor substrate container arrangement
|
|
CN109521657A
(zh)
|
2018-12-11 |
2019-03-26 |
中国科学院光电技术研究所 |
一种表面等离子体光刻中小分子光刻胶的干法显影方法
|
|
US12211691B2
(en)
|
2018-12-20 |
2025-01-28 |
Lam Research Corporation |
Dry development of resists
|
|
US11966158B2
(en)
|
2019-01-30 |
2024-04-23 |
Inpria Corporation |
Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods
|
|
US11498934B2
(en)
|
2019-01-30 |
2022-11-15 |
Inpria Corporation |
Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods
|
|
JP7553458B2
(ja)
|
2019-02-25 |
2024-09-18 |
ボード オブ リージェンツ，ザ ユニバーシティ オブ テキサス システム |
異方性化学エッチングのための大面積測定及び処理制御
|
|
TW202514246A
(zh)
|
2019-03-18 |
2025-04-01 |
美商蘭姆研究公司 |
基板處理方法與設備
|
|
WO2020210660A1
(en)
|
2019-04-12 |
2020-10-15 |
Inpria Corporation |
Organometallic photoresist developer compositions and processing methods
|
|
US11935758B2
(en)
|
2019-04-29 |
2024-03-19 |
Lam Research Corporation |
Atomic layer etching for subtractive metal etch
|
|
US12062538B2
(en)
|
2019-04-30 |
2024-08-13 |
Lam Research Corporation |
Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
|
|
TWI837391B
(zh)
|
2019-06-26 |
2024-04-01 |
美商蘭姆研究公司 |
利用鹵化物化學品的光阻顯影
|
|
WO2020263750A1
(en)
|
2019-06-27 |
2020-12-30 |
Lam Research Corporation |
Apparatus for photoresist dry deposition
|
|
TW202536930A
(zh)
|
2019-06-28 |
2025-09-16 |
美商蘭姆研究公司 |
光阻膜的乾式腔室清潔
|
|
KR20250160237A
(ko)
|
2019-06-28 |
2025-11-11 |
램 리써치 코포레이션 |
복수의 패터닝 복사-흡수 엘리먼트들 및/또는 수직 조성 경사를 갖는 포토레지스트
|
|
EP3990983A4
(en)
|
2019-06-28 |
2023-07-26 |
Lam Research Corporation |
BAKING STRATEGIES TO INCREASE THE LITHOGRAPHIC PERFORMANCE OF A METAL CONTAINING RESIST
|
|
JP7303689B2
(ja)
|
2019-07-31 |
2023-07-05 |
株式会社ディスコ |
エッチング装置およびウェーハ支持具
|
|
WO2021067632A2
(en)
|
2019-10-02 |
2021-04-08 |
Lam Research Corporation |
Substrate surface modification with high euv absorbers for high performance euv photoresists
|
|
WO2021072042A1
(en)
|
2019-10-08 |
2021-04-15 |
Lam Research Corporation |
Positive tone development of cvd euv resist films
|
|
SG11202108851RA
(en)
|
2020-01-15 |
2021-09-29 |
Lam Res Corp |
Underlayer for photoresist adhesion and dose reduction
|
|
EP4100793A4
(en)
|
2020-02-04 |
2024-03-13 |
Lam Research Corporation |
POST APPLICATION/EXPOSURE TREATMENTS TO IMPROVE THE DRY DEVELOPMENT PERFORMANCE OF METAL-CONTAINING EUV RESIST
|
|
EP4115242A4
(en)
|
2020-03-02 |
2024-03-13 |
Inpria Corporation |
PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
|
|
WO2021202146A1
(en)
|
2020-03-30 |
2021-10-07 |
Lam Research Corporation |
Structure and method to achieve positive tone dry develop by a hermetic overlayer
|
|
US11822237B2
(en)
|
2020-03-30 |
2023-11-21 |
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|
|
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(en)
|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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(en)
|
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|
|
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*
|
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|
|
US20230314946A1
(en)
*
|
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|
|
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(zh)
*
|
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|
|
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(zh)
*
|
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|
|
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|
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|
|
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(en)
|
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|
|
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(en)
|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
|
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|
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|
|
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(en)
|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|