JP2023505992A5 - - Google Patents
Info
- Publication number
- JP2023505992A5 JP2023505992A5 JP2022535046A JP2022535046A JP2023505992A5 JP 2023505992 A5 JP2023505992 A5 JP 2023505992A5 JP 2022535046 A JP2022535046 A JP 2022535046A JP 2022535046 A JP2022535046 A JP 2022535046A JP 2023505992 A5 JP2023505992 A5 JP 2023505992A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metal surface
- capping layer
- sacrificial capping
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962946243P | 2019-12-10 | 2019-12-10 | |
| US62/946,243 | 2019-12-10 | ||
| PCT/US2020/063770 WO2021118993A1 (en) | 2019-12-10 | 2020-12-08 | Self-assembled monolayers as sacrificial capping layers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023505992A JP2023505992A (ja) | 2023-02-14 |
| JP2023505992A5 true JP2023505992A5 (https=) | 2023-12-14 |
| JP7627432B2 JP7627432B2 (ja) | 2025-02-06 |
Family
ID=76210619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022535046A Active JP7627432B2 (ja) | 2019-12-10 | 2020-12-08 | 犠牲キャッピング層としての自己組織化単分子層 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11915973B2 (https=) |
| JP (1) | JP7627432B2 (https=) |
| KR (1) | KR102889307B1 (https=) |
| CN (1) | CN114830323B (https=) |
| TW (1) | TWI865682B (https=) |
| WO (1) | WO2021118993A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024523510A (ja) | 2021-07-06 | 2024-06-28 | 東京エレクトロン株式会社 | 自己組織化単分子層を使用する選択的な膜形成 |
| US11990369B2 (en) * | 2021-08-20 | 2024-05-21 | Applied Materials, Inc. | Selective patterning with molecular layer deposition |
| JP2023182324A (ja) * | 2022-06-14 | 2023-12-26 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP2024049188A (ja) * | 2022-09-28 | 2024-04-09 | 東京エレクトロン株式会社 | 膜形成方法及び基板処理装置 |
| JP2024081396A (ja) * | 2022-12-06 | 2024-06-18 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US12604685B2 (en) * | 2023-07-19 | 2026-04-14 | Tokyo Electron Limited | Methods for controlling spin-on self-assembled monolayer (SAM) selectivity |
| JP2025087989A (ja) * | 2023-11-30 | 2025-06-11 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US20260053045A1 (en) * | 2024-08-16 | 2026-02-19 | Applied Materials, Inc. | Integrated encapsulation deposition with metal recovery and passivation |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6530380B1 (en) * | 1999-11-19 | 2003-03-11 | Chartered Semiconductor Manufacturing Ltd. | Method for selective oxide etching in pre-metal deposition |
| US7468105B2 (en) * | 2001-10-16 | 2008-12-23 | Micron Technology, Inc. | CMP cleaning composition with microbial inhibitor |
| US7387362B2 (en) * | 2005-03-18 | 2008-06-17 | Hewlett-Packard Development Company, L.P. | Methods and architecture for applying self-assembled monolayer(s) |
| CN101903990B (zh) * | 2007-12-18 | 2013-11-06 | 杨秉春 | 嵌入式互连系统的形成方法、双重嵌入式互连系统的形成方法及集成电路装置的形成方法 |
| US7875519B2 (en) * | 2008-05-21 | 2011-01-25 | Intel Corporation | Metal gate structure and method of manufacturing same |
| WO2010032616A1 (ja) | 2008-09-19 | 2010-03-25 | 三菱瓦斯化学株式会社 | 銅配線表面保護液および半導体回路の製造方法 |
| AU2010310750B2 (en) * | 2009-10-23 | 2015-02-26 | President And Fellows Of Harvard College | Self-aligned barrier and capping layers for interconnects |
| CN102270607B (zh) * | 2010-06-03 | 2014-01-29 | 中国科学院微电子研究所 | 栅极堆叠的制造方法和半导体器件 |
| US8728720B2 (en) * | 2010-06-08 | 2014-05-20 | The Regents Of The University Of California | Arbitrary pattern direct nanostructure fabrication methods and system |
| EP2674996A1 (en) * | 2012-06-15 | 2013-12-18 | Imec VZW | Method for growing nanostructures in recessed structures |
| JP6552009B2 (ja) | 2013-12-17 | 2019-07-31 | 東京エレクトロン株式会社 | 基板への周期的オルガノシリケートまたは自己組織化モノレイヤのスピンオンコーティングのためのシステムおよび方法 |
| CN107406977A (zh) | 2015-02-26 | 2017-11-28 | 应用材料公司 | 使用自组装单层的选择性电介质沉积的方法 |
| US10316406B2 (en) | 2015-10-21 | 2019-06-11 | Ultratech, Inc. | Methods of forming an ALD-inhibiting layer using a self-assembled monolayer |
| WO2017189135A1 (en) | 2016-04-25 | 2017-11-02 | Applied Materials, Inc. | Chemical delivery chamber for self-assembled monolayer processes |
| JP2017222928A (ja) * | 2016-05-31 | 2017-12-21 | 東京エレクトロン株式会社 | 表面処理による選択的堆積 |
| US10068764B2 (en) | 2016-09-13 | 2018-09-04 | Tokyo Electron Limited | Selective metal oxide deposition using a self-assembled monolayer surface pretreatment |
| TWI739984B (zh) * | 2017-01-31 | 2021-09-21 | 美商應用材料股份有限公司 | 就圖案化應用進行選擇性沉積之方案 |
| US10276379B2 (en) * | 2017-04-07 | 2019-04-30 | Applied Materials, Inc. | Treatment approach to improve film roughness by improving nucleation/adhesion of silicon oxide |
| KR102709865B1 (ko) | 2017-05-05 | 2024-09-26 | 퀀텀-에스아이 인코포레이티드 | 생물학적 반응에 있어서 개질된 표면 반응성 및 오손방지 특성을 갖는 기재 |
| TWI762194B (zh) | 2017-07-18 | 2022-04-21 | 美商應用材料股份有限公司 | 在金屬材料表面上沉積阻擋層的方法 |
| US10586734B2 (en) * | 2017-11-20 | 2020-03-10 | Tokyo Electron Limited | Method of selective film deposition for forming fully self-aligned vias |
| US10782613B2 (en) | 2018-04-19 | 2020-09-22 | International Business Machines Corporation | Polymerizable self-assembled monolayers for use in atomic layer deposition |
| US10655217B2 (en) * | 2018-05-01 | 2020-05-19 | Spts Technologies Limited | Method of forming a passivation layer on a substrate |
-
2020
- 2020-12-08 JP JP2022535046A patent/JP7627432B2/ja active Active
- 2020-12-08 KR KR1020227022922A patent/KR102889307B1/ko active Active
- 2020-12-08 US US17/115,231 patent/US11915973B2/en active Active
- 2020-12-08 WO PCT/US2020/063770 patent/WO2021118993A1/en not_active Ceased
- 2020-12-08 CN CN202080085825.1A patent/CN114830323B/zh active Active
- 2020-12-10 TW TW109143590A patent/TWI865682B/zh active
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