JP2017098539A - 自己組織化単分子層を用いたald抑制層の形成方法 - Google Patents
自己組織化単分子層を用いたald抑制層の形成方法 Download PDFInfo
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- JP2017098539A JP2017098539A JP2016206010A JP2016206010A JP2017098539A JP 2017098539 A JP2017098539 A JP 2017098539A JP 2016206010 A JP2016206010 A JP 2016206010A JP 2016206010 A JP2016206010 A JP 2016206010A JP 2017098539 A JP2017098539 A JP 2017098539A
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- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 16
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- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 230000005764 inhibitory process Effects 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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Abstract
【解決手段】金属Mと金属Mの酸化物層50とを有する金属化基板を用いる。金属Qを含む還元ガスが、金属Mの酸化物層を還元するために使用され、金属Mの上に、M+MQyOxの構造の層が残される。SAM分子60は、ガス(蒸気)として供給され、M+MQyOx層上にALD抑制SAM層60Lを形成する。
【選択図】図4
Description
基板10上で、いくつかの実験が行われた。基板10は、物理的気相成長法(PVD)を用いて銅層20で金属化されたものである。また、基板10は、1nmから3nmの間の厚さの天然酸化銅による上面金属酸化物層22を有する。金属化基板10Mは、そのままの状態で、すなわち、前洗浄を行うことなく、ALD反応装置に設置される。使用された具体的なALD反応装置は、ウルトラテック ケンブリッジ ナノテック サバンナ(登録商標)反応装置である。金属化基板10Mは、直ちに真空下(0.1トール)に置かれ、150℃から170℃の間の温度に加熱された。
本開示の一局面は、半導体装置の製造において半導体構造を形成する処理の一部として、S−ALDを実行することを含む。
Claims (28)
- 金属Mの酸化物層(以下、「金属酸化物層」と称する)で覆われた金属M上にALD抑制層を形成する方法であって、
a)前記金属酸化物層を、金属Qを含む還元ガスに曝すことによって、前記金属酸化物層を還元し、前記金属M上にM+MQxOy層を形成することと、
b)蒸気相中で、前記M+MQxOy層を自己組織化された単分子層(以下、「SAM」と称する)の分子に曝すことと
を備え、
前記b)の工程において、SAM分子は、前記M+MQxOy層上に、ALDを抑制するSAM層を形成する、方法。 - 前記金属Mは、Cu,Ni,FeまたはCoであり、
前記金属Qは、Al,Hf,Zr,Si,TiまたはZnである
請求項1に記載の方法。 - 前記SAM分子は、チオール分子である
請求項1または2に記載の方法。 - 前記金属Mは銅であり、
前記金属酸化物層は酸化銅で形成され、
前記還元ガスはトリメチルアルミニウム(TMA)を含み、
前記SAM分子はチオール分子であり、
前記M+MQxOy層はCu+CuAlO2層である
請求項1から3の何れか1項に記載の方法。 - 前記a)の工程は、120℃から250℃の間の温度で実施される
請求項1から4の何れか1項に記載の方法。 - 前記a)の工程および前記b)の工程は、1トール未満の減圧条件下で実施される
請求項1から5の何れか1項に記載の方法。 - 前記金属酸化物層は1nmから5nmの範囲内の厚さを有する
請求項1から6の何れか1項に記載の方法。 - 前記ALD抑制層は、少なくとも100ALDサイクルの間、前記ALD抑制層上へのALD膜の形成を実質的に抑制する
請求項1から7の何れか1項に記載の方法。 - 前記ALD抑制層は、少なくとも150ALDサイクルの間、前記ALD抑制層上へのALD膜の形成を実質的に抑制する
請求項8に記載の方法。 - 半導体基板上にパターン化された金属層として前記金属Mを形成することをさらに備える
請求項1から9の何れか1項に記載の方法。 - 前記金属Mは、半導体基板の誘電体層上にパターンとして形成されるとともに、
前記方法は、
前記誘電体層、および、前記金属Mを覆う前記SAM層上にALD処理を行い、これにより、前記誘電体層上にはALD膜を形成し、前記SAM層上にはALD膜を形成しないことによって、選択領域ALDを実行すること
をさらに備える
請求項1から9の何れか1項に記載の方法。 - 前記誘電体層は、酸化物層である
請求項11に記載の方法。 - 前記SAM層を除去することをさらに備える
請求項11または12に記載の方法。 - 前記a)の工程は、720秒未満の時間で実行される
請求項1から13の何れか1項に記載の方法。 - 選択領域原子層堆積(以下、「S−ALD」と称する)を実行する方法であって、
a)半導体基板によって支持される誘電体層上に、金属Mの層(以下、「金属層」と称する)を規定し、前記金属層は、パターンを規定し、前記金属層は、金属Mの酸化物層(以下、「金属酸化物層」と称する)によって覆われることと、
b)前記金属酸化物層を、金属Qを含む還元ガスに曝すことによって、前記金属酸化物層を還元し、前記金属層上にM+MQxOy層を形成することと、
c)蒸気相中で、前記M+MQxOy層および前記誘電体層を自己組織化された単分子層(SAM)分子に曝し、前記SAM分子は、前記M+MQxOy層上にSAM層を形成して、ALD抑制層を規定するとともに、前記誘電体層上にはSAM層は形成されないことと、
d)ALD処理を実行し、ALD膜を堆積し、前記ALD膜は、前記誘電体層上には形成され、前記SAM層上には形成されないことと
を備える方法。 - 前記金属Mは、Cu,Ni,FeまたはCoであり、
前記金属Qは、Al,Hf,Zr,Si,TiまたはZnである
請求項15に記載の方法。 - 前記SAMを除去する工程e)をさらに備える
請求項15または16に記載の方法。 - 前記b)の工程は、720秒以内で実行される
請求項15から17の何れか1項に記載の方法。 - 前記SAM分子は、チオール分子で構成される
請求項15から18の何れか1項に記載の方法。 - 前記誘電体層は、SiO2層を含む
請求項15から19の何れか1項に記載の方法。 - 前記金属Mは銅であり、
前記金属酸化物層は酸化銅で形成され、
前記還元ガスはトリメチルアルミニウム(TMA)を含み、
前記SAM分子はチオール分子であり、
前記M+MQxOy層はCu+CuAlO2層である
請求項15から20の何れか1項に記載の方法。 - 前記SAM層は、少なくとも100ALDサイクルの間、前記SAM層上へのALD膜の形成を実質的に抑制する
請求項15から21の何れか1項に記載の方法。 - 前記SAM層は、少なくとも150ALDサイクルの間、前記SAM層上へのALD膜の形成を実質的に抑制する
請求項22に記載の方法。 - 前記b)の工程は、120℃から250℃の間の温度で実施される
請求項15から23の何れか1項に記載の方法。 - 前記b)の工程および前記c)の工程は、1トール未満の減圧条件下で実施される
請求項15から24の何れか1項に記載の方法。 - 前記金属酸化物層は1nmから5nmの範囲内の厚さを有する
請求項15から25の何れか1項に記載の方法。 - 前記還元ガスは、トリメチルアルミニウム(TMA)またはアルキルアミドを含む
請求項15から26の何れか1項に記載の方法。 - 前記b)、前記c)および前記d)の工程は、単一のALDチャンバ内で実施される
請求項15から27の何れか1項に記載の方法。
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